CN106950484A - It is a kind of while measuring the device and method of Hall coefficient and Seebeck coefficient - Google Patents
It is a kind of while measuring the device and method of Hall coefficient and Seebeck coefficient Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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Abstract
The invention belongs to semi-conducting material technical field of measurement and test, it is specifically related to a kind of while measuring the device and method of Hall coefficient and Seebeck coefficient, the device includes straight trip slide rail, group of magnets, test probe and primary heater, straight trip slide rail two ends are placed with a magnet frame respectively, a pair of identical group of magnets is each provided with each magnet frame, primary heater is arranged on the top of straight trip slide rail, testing sample is placed on the two panels potsherd secondary heater on primary heater surface, test probe, motor driving straight trip slide rail movement are additionally provided with primary heater.The invention also discloses the method that Hall coefficient and Seebeck coefficient are measured using said apparatus.It is of the invention effectively to solve in Seebeck coefficient measurement to measuring the problem of shape need is high, the material of different size shape can be measured, the measurement of Hall coefficient and Seebeck coefficient at different temperatures is also achieved, automation mechanized operation is realized, measuring accuracy is high.
Description
Technical field
The invention belongs to semi-conducting material technical field of measurement and test, and in particular to a kind of to measure Hall coefficient and Seebeck simultaneously
The device and method of coefficient, it can complete the measurement of Hall and Seebeck coefficient under different temperatures.
Background technology
Hall coefficient and Seebeck coefficient are played as the important parameter for weighing material character in semiconducter research field
Extremely important effect.By measuring Hall coefficient, conduction type, carrier concentration and the carrier of semi-conducting material can interpolate that
The important parameters such as mobility, by change of the Hall coefficient with temperature, also can determine energy gap, the impurity electricity of semiconductor
From etc. performance parameter.Seebeck coefficient is ground as the important parameter for weighing heat to electricity conversion performance in the thermoelectric material of extensive concern
Important in inhibiting in hair.The conversion efficiency of thermoelectric of thermoelectric material depends primarily on figure of merit ZT, and its expression formula is：
Wherein, α is Seebeck coefficient, is electrical conductivity, is thermal conductivity, and T is temperature.The size of Seebeck coefficient is excellent to thermoelectricity
Value has material impact, and the Seebeck coefficient of accurate measurement material, evaluation and research for pyroelectric material performance have important
Practical significance.Therefore, exploitation can measure the device of Hall coefficient and Seebeck coefficient, in semiconductor and thermoelectric material field
It is significant.
At present, have been developed can be in high pressure, for gas sensitive and tens micron-scale samples for Hall test instrument
Etc. the test device of different condition, in Hall test to use electromagnetic field device, electromagnetic field is bulky, complex structure, cost more
It is more expensive, and there is signal noise, also there is the patent of correlation, but there is manually operated magnet in some patents, it is not carried out certainly
Dynamicization is tested, and Hall effect measurement does not have related detailed testing process and data processing side in most of patent
Case.Seebeck coefficient tester also develops associated test devices, measuring method be totally divided into the direct method of measurement, static method and
Dynamic method, the direct method of measurement can introduce parasitic electromotive force, and measurement error is larger, and static method measurement efficiency is low, and temperature is difficult to control
System, and most of device is all the measurement of two probe block materials at present, is required when to material processing, it is necessary to measured thin film
When, two sonde methods can not complete measurement, on this basis, occur in that the device of a small number of measurement thin-film materials, such as patent " one
Plant the devices and methods therefor of measurement Seebeck coefficients：A kind of four spy is mentioned in China, CN105628732A [P] .20160601 "
The dynamic method of pin, more accurate measurement Seebeck coefficient.But said apparatus all can only it is single realize measurement Hall coefficient or
It is Seebeck coefficient, measurement Hall coefficient and Seebeck coefficient can be realized by not being found same device at present.
Due to there is drawbacks described above and deficiency, this area is needed badly to make and further improved, a kind of measurement of design
Method, the Hall coefficient and Seebeck coefficient under different temperatures can be measured simultaneously, realize the measurement of automation.
The content of the invention
For the disadvantages described above or Improvement requirement of prior art, Hall coefficient and plug are measured simultaneously the invention provides a kind of
The apparatus and method of seebeck coefficient.The test device combines the similarity of Hall coefficient and Seebeck coefficient in testing,
The measurement of Hall and Seebeck coefficient under different temperatures, Hall coefficient and resistivity are completed using four probe combination permanent magnet groups
Measurement uses vanderburg method, and Seebeck coefficient measurement effectively solves Seebeck coefficient survey using four probe test methods
The problem of high to measurement shape need in amount, and traditional Hall effect measurement device is improved, measurement different size is realized,
Material of different shapes, and the measurement of Hall coefficient and Seebeck coefficient at different temperatures is also achieved, by two kinds of surveys
Examination is focused on a table apparatus, and simple in construction, small volume has saved cost and space, and the device realizes automation mechanized operation, is surveyed
Try high precision.
To achieve the above object, Hall coefficient and Sai Bei are measured simultaneously there is provided a kind of according to one aspect of the present invention
The device of gram coefficient, it is characterised in that including straight trip slide rail, group of magnets, test probe and primary heater,
The straight trip slide rail two ends are placed with a magnet frame, each magnet frame respectively is each provided with a pair of identical magnet
Group, the group of magnets includes two permanent strong magnetic iron, and described two permanent strong magnetic iron phases are put so that N-S modes are relative at a certain distance
Put, two pairs of group of magnets produce identical, the in opposite direction magnetic field of size；
The primary heater is arranged on the top of straight trip slide rail, and two panels potsherd secondary heater is separated by a distance to be embedded in institute
State in the middle of primary heater surface, testing sample is placed on two panels potsherd secondary heater, four of the primary heater are diagonal
On be respectively arranged with stylet knob, the stylet knob fixes the one end for testing probe, the position for adjusting test probe,
The other end of the test probe respectively positioned at four of sample surfaces it is diagonal on, cold end and hot junction temperature for measuring sample
Degree, the primary heater, potsherd secondary heater, stylet knob, test probe and sample are placed in heat shield,
One end of the straight trip slide rail and motor connection, motor driving straight trip slide rail movement, with the movement of straight trip slide rail,
Testing sample in the heat shield is moved between two group of magnets, and the magnetic field suffered by testing sample changes.
It is further preferred that a thermocouple is additionally provided with the primary heater, the temperature for measuring primary heater.It is logical
Setting thermocouple is crossed, the temperature of primary heater can be accurately controlled, it is ensured that the accuracy of test.
Preferably, the left and right of the test probe is realized by the stylet knob, adjusted up and down, the test probe leads to
Enter electric current, voltage or temperature for measuring sample edge.After fixation of the test probe by the stylet knob, test
The position of probe can left and right, adjust three-dimensional mobile up and down, it is achieved thereby that the test of the sample to arbitrary size shape.It is logical
Cross and be passed through electric current within the probe, the accuracy of test result can be improved.
Preferably, filled with protective gas in the heat shield, and the heat shield is double-decker.Using protective gas come
Protect test sample, it is ensured that sample itself is unaffected, and heat shield uses double-decker, then greatly improves effect of heat insulation.
Specifically, present invention employs the main body table top that three pieces of heaters are whole sample stage, one piece controllable for producing
Environment temperature primary heater, and other two fritters ceramic plate heater is embedded on big heater, for producing test cord shellfish
The temperature difference of gram coefficient, testing sample is placed on two pieces of ceramic secondary heaters, solves test process testing sample and sample stage
Insulation Problems, while also solving measurement Hall coefficient and Seebeck coefficient temperature the problem of produce.Carried out using four probes
Test, four probes complete voltage, the measurement of temperature, and can be passed through electric current in measurement Hall coefficient so that test
More facilitate, while the unique design of four probes, can make probe three-dimensional mobile, contrast other inventions, test to material
Material and size, thickness requirement all reduce many.The permanent magnet of use is staggered relatively, magnetic field is produced, altogether using four pieces of phases
Same magnet, produces identical, the in opposite direction magnetic field of two sizes, and four blocks of magnet are fixed on the straight trip slide rail designed, are contrasted
In other inventions, permanent-magnetic field is used so that whole device is simple in construction, it is convenient, take up space small, low cost and in the absence of believing
Number noise, it is possible to achieve the automatic test of Hall coefficient.
It is another aspect of this invention to provide that there is provided a kind of while measure the method for Hall coefficient and Seebeck coefficient, its
It is characterised by, is carried out according to the following steps using above-mentioned measurement apparatus：
S1. prepare testing sample, make that the thickness of testing sample is generally uniform, size is symmetrical；
S2. on two potsherd secondary heaters ready testing sample being placed on primary heater, and regulate
Test the position of probe；
S3. ambient temperature to required temperature is applied into electric current, respectively by the primary heater on test probe
In positive flux field, negative fluxfield and without in magnetic field environment, using the electrical potential difference between relative two probes of vanderburg method test；
S4. the primary heater is given ambient temperature to required temperature using the potsherd secondary heater
The temperature difference is set up at testing sample two ends, measures the voltage difference between now four test probes and the temperature of four test probes
Value；
S5. the data obtained according to being measured in step S4 and S5, calculate Hall coefficient and the Seebeck system of testing sample
Number.
It is further preferred that in step s 2, when installing sample to be measured, first opening heat shield, sample to be measured being put
Put on two potsherd secondary heaters, rotate four stylet knobs so that four test probe positions corresponding to stylet knob
In testing sample edge, make it that test probe contact is good by moving up and down stylet knob, be then shut off heat shield.
Preferably, in step s3, following steps are specifically included during the electrical potential difference of measurement testing sample：
S31. the initial temperature of testing sample is measured, using the primary heater by ambient temperature to initial temperature,
Certain time is waited, makes temperature stabilization；
S32. electric current is applied on test probe, respectively in positive flux field, negative fluxfield and without in magnetic field environment, using vanderburg
Electrical potential difference between two diagonal probes of method test；
S33. the primary heater, after after temperature stabilization, enters by ambient temperature to the next temperature for needing to measure
The potential difference measurements of the next temperature of row；
S34. S31-S33 operation is repeated, until completing the measurement of all assigned temperatures.
This method of testing and flow measure Hall coefficient using vanderburg method, resistivity, carrier concentration, using method more
Seebeck coefficient is measured for the method for testing that accurate four temperature-voltage measurements are averaged, accurate measurement is realized.
Preferably, following steps are specifically included in step s 4：
S41 utilizes the primary heater that to required temperature, ambient temperature is treated into temperature stabilization；
S42 connects the potsherd secondary heater, is set up to testing sample two ends after the temperature difference and is momentarily turned off the potsherd
Secondary heater；
S43 measures the voltage difference between four test probes and the temperature value of four test probes.
In general, by the contemplated above technical scheme of the present invention compared with prior art, with advantages below and
Beneficial effect：
(1) measurement apparatus of the invention realizes the measurement of Hall coefficient and Seebeck coefficient on same device, first
Propose to use four probe measurement Halls and Seebeck coefficient device, studied in material character, particularly in thermoelectric material often
Test Hall coefficient and Seebeck coefficient are needed, two equipment must be used according to conventional, it is contemplated that Hall coefficient and Seebeck
Coefficient all needs measurement voltage and temperature, and the present invention is united two into one by the present invention, complete by the test probe of particular design
Into the measurement of voltage and temperature, and add and can automatically control mobile group of magnets, add magnetic field, meet to Hall coefficient and
The measurement of Seebeck coefficient, it is cost-effective, reduce space, convenient test.
(2) measurement apparatus of the invention can measure arbitrary shape, can measure film on measuring characteristic, block
Semi-conducting material.After fixation of four test probes by corresponding stylet knob, the position of probe can left and right, up and down three
Dimension movement, it is achieved thereby that the test to sample arbitrary size shape.In conventional testing procedures, particularly Seebeck is tested
In, most of two sonde methods tests all used, only can survey mass shape material, and the placement of sample there are certain requirements, and
It is not easy to install, therefore, for some specific materials, it will cause test difficulty using conventional equipment or can not survey at all
Examination, the present invention is solved this problem in that, and is installed also very convenient.
(3) present invention is proposed for while measuring the supporting method of testing and stream of Hall coefficient and Seebeck coefficient device
Journey.The device for measuring Hall coefficient and Seebeck coefficient simultaneously is different from other individually test Hall coefficient or Seebeck coefficients
Device, it is necessary to again propose with the supporting method of testing flow of new equipment and data processing scheme, this method of testing and stream
Cheng Caiyong vanderburgs method measures Hall coefficient, resistivity, carrier concentration, using more accurate four temperature-voltages of method
The method of testing measurement Seebeck coefficient being averaged is measured, accurate measurement is realized.
(4) present invention is using the something in common of Hall and Seebeck coefficient is measured, invented and meanwhile can measure Hall with
The device of Seebeck coefficient, the semiconductor testing apparatus of a new generation can be developed with this, is conducive to the performance of semi-conducting material
Detection and research and development, are with a wide range of applications.
Brief description of the drawings
The top view of the apparatus structure schematic diagram of measurement Hall coefficient and Seebeck coefficient while Fig. 1 is the present invention；
The front view of the apparatus structure schematic diagram of measurement Hall coefficient and Seebeck coefficient while Fig. 2 is the present invention；
Fig. 3 is first group of Δ T1And V1Initial data is fitted S1The curve map of value；
Fig. 4 is second group of Δ T2And V2Initial data is fitted S2The curve map of value；
Fig. 5 is the 3rd group of Δ T3And V3Initial data is fitted S3The curve map of value；
Fig. 6 is the 4th group of Δ T4And V4Initial data is fitted S4The curve map of value.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in each embodiment of invention described below
Not constituting conflict each other can just be mutually combined.
The apparatus structure schematic diagram of measurement Hall coefficient and Seebeck coefficient while Fig. 1 and 2 is the present invention, with reference to
Accompanying drawing 1, the present invention will be further described in detail by Fig. 2, and its structure is as shown in accompanying drawing 1-2, and 1 is straight trip guide rail, 3 and 21 in figure
It is the framework of fixed magnet for permanent strong magnetic iron, 2 and 22,24 be servomotor, and 25 be shaft coupling, straight trip guide rail 1 passes through shaft coupling
Device is connected with servomotor, and magnet and framework are fixed on straight trip guide rail, and guide rail, which moves back and forth, can make sample be in different directions
Magnetic field under, 1,2,3,21,22,24,25 are monolithically fabricated magnetic field and transmission system in figure；5 be heat shield in figure, and 9 be offer ring
The primary heater of border temperature, 8 and 16 be embedded 2 pieces of potsherd secondary heaters for providing the temperature difference, and 11,12,13,14 be four tests
Probe, electric current can be passed through by power supply, and can measure voltage, temperature, and 7,10,15,17 be probe fixture, is realized
The three-dimensional of probe is mobile, and 6 is are embedded in the thermocouple in big heater, can be with HEATER FOR MEASURING temperature, so as to enter to environment temperature
Row control, 4 be helium or other protective gas bottle, and it is sample stage system to need to be passed through 4-17 in protective gas test, figure at high temperature
System；Module 18 is classical PID temperature control system, control heating rate and heating-up temperature, provides reliable accurate for environment
Temperature control, module 19 is that relay group produces current impulse, and is believed analog-signal transitions for numeral by data collecting card
Number, voltage and temperature are measured, module 23 is step motor control system, precise control guide rail displacement, so as to sample periphery
Magnetic field is controlled, and the temperature of small heater, which provides the temperature difference, to be powered off, it is not necessary to which PID control system, 18,19,23 pass through USB
Serial ports 20 is communicated with computer, from Microsoft c# as test software development language, realize test be computer one
Bodyization control, collection, calculate, the process of display output, 18,19,20,23 and computer forming control system.
It is international, domestic all without related unified standard due to being tested at present for Hall and Seebeck coefficient.To sheet sample
Product test also rare corresponding test structure, while under the new test device of the present invention, science, system, the test mark of specification
Quasi- flow and rational data processing method also vacancy.Will be detailed below detailed description is the stream of whole test process
Journey and data processing section.
The invention also discloses a kind of while the method for measurement Hall coefficient and Seebeck coefficient, specifically includes following step
Suddenly：
1. sample standard
Sample should be thickness uniformly, material of the size between 8mm*8mm-20*20mm, and sample girth and thickness of sample are full
Sufficient Lp is more than or equal to 15t, and wherein Lp is girth, and t is thickness, and recommendation sample size is symmetrical, thickness (refers to ASTM for 1mm：F76-
08)。
2. test process
Sample is installed：Testing sample is placed on sample stage, probe is fixed on sample by turn knob 7,10,15,17
Edge, ensures test probe 11,13 and test probe 12,14 on the diagonal as far as possible, and whole sample position is ensured while should try one's best
In sample stage center.Heat-insulating and sealing cover is installed, completes to install.
Contact detection：It should detect whether four probe contacts contact well with sample first, the corresponding current that can be broken with official under county magistrate who administers lawsuit, etc.,
Whether the correlation of voltage is good to learn contact of the probe with sample.
The measurement of Hall coefficient and resistivity
Testing initial sample temperature, (computer controls PID, primary heater 9 is by ambient temperature to required initial temperature
Degree, waits certain time so that temperature stabilization)
Probe 11 will be tested, 12,13,14 are designated as a respectively, b, c, d.In the magnetic field environment that size is+B, minimum electricity
Flow pulse to flow into from probe a, c outflows measure voltage Vd-Vc, the voltage of measurement is expressed as Vac, dc (+B).Treat sample temperature base
This holding is constant, and according to the method, test is divided into 3 times：For the first time in the case where magnetic field size is+B, Vca, db (+B) are measured,
Vac, db (+B), Vdb, ac (+B), Vbd, ac (+B)；Slide rail of keeping straight on is moved, and for the second time in the environment without magnetic field, is measured
Vba, cd, V ab, ca, Vcb, da, Vbc, da；Straight trip slide rail move again, make sample magnetic field size be-B under, measure Vac, db (-
B), Vca, db (- B), Vbd, ac (- B), V db, ac (- B)
Carrying out next temperature spot measurement, (computer controls PID, primary heater 9 is by ambient temperature under required
One temperature, waits certain time so that temperature stabilization)
B, C operation are repeated, until completing assigned temperature measurement.
The measurement of Seebeck coefficient
Heating devices heat is to initial temperature, computer controls PID, and primary heater 9 is by ambient temperature to required
Initial temperature, waits certain time, treats temperature, connects potsherd secondary heater 8, and potsherd secondary heater 8 gives sample two
End, which is set up after the temperature difference, to be momentarily turned off, and needs to keep variation of ambient temperature little during foundation.The cold hot-side temperature of detection now
Average value, need to be basically identical with environment temperature.Record voltage, probe 12,13 between voltage between probe 11,13, probe 11,14
Between voltage, the temperature value of voltage and four probes 11,12,13,14 is designated as TA, TB, TC, TD between probe 12,14.
3. data processing
By the data measured according to following specific formula, you can try to achieve Hall coefficient RhAnd electricalresistivityρav, so as to obtain
Carrier mobility μ：
The calculating of Hall coefficient：
The calculating of resistivity：
Wherein f1 and f2 and functions Q1 and Q2 has corresponding relation, specifically refers to pertinent literature, such as (ASTM：F76-
08)
Carrier mobility μ：
The calculating of Seebeck coefficient:
According to TA, TC in data, both temperature difference are tried to achieve, Δ T1 is designated as
ΔT1=TA-TC
Further according to the voltage between the probe 11,13 measured in every group of data, Δ V1 is designated as,
According to the multigroup Δ T1 and Δ V1 calculated, by following formula
ΔT1=S1ΔV1+B1
Fit and carry out the Seebeck coefficient value that slope S 1 is as tried to achieve
Similarly, TA is sought, both TD temperature difference is designated as Δ T2
ΔT2=TA-TD
Further according to the voltage between the probe 11,14 measured in every group of data, Δ V2 is designated as,
According to the multigroup Δ T2 and Δ V2 calculated, by same fitting formula
ΔT2=S2ΔV2+B2
Fit and carry out another Seebeck coefficient value that slope S 2 is as tried to achieve
Seek TB, both TC temperature difference is designated as Δ T3
ΔT3=TB-TC
Further according to the voltage between the probe 12,13 measured in every group of data, Δ V3 is designated as,
According to the multigroup Δ T3 and Δ V3 calculated, by same fitting formula
ΔT3=S3ΔV3+B3
Fit and carry out the 3rd Seebeck coefficient value that slope S 3 is as tried to achieve.
Seek TB, both TD temperature difference is designated as Δ T4
ΔT4=TB-TD
Further according to the voltage between the probe 12,14 measured in every group of data, Δ V4 is designated as,
According to the multigroup Δ T4 and Δ V4 calculated, by same fitting formula
ΔT4=S4ΔV4+B4
Fit and carry out the 4th Seebeck coefficient value that slope S 4 is as tried to achieve
S1, S2, S3, S4 average value are tried to achieve again, are designated as S,
Obtained coefficient S is the Seebeck coefficient finally tried to achieve.
4. error analysis
During Hall coefficient is measured, due to the generation of Hall effect, other effects, such as mismatch electricity can be supervened
Pressure difference, Ai Tinghaosen effects, the inner leduc effect of discipline one, Nernst effect, thermocurrent not error caused by equipotential, these mistakes
Difference is the main source of systematic error, by the vanderburg method of comparatively perfect, can largely eliminate these systematic errors.
Equally, the relative error that measurement is caused also is there is, surveys Hall coefficient for vanderburg method, its relative error can table
It is shown as：
In formula, | Δ Rhal|=| Rh-Rreal|,RhFor the value of the Hall coefficient of measurement, RrealFor real Hall coefficient, production
It is raw | Δ Rhal| factor derive from：The error produced to measurement magnetic field | Δ B |=| Bm-Breal|, measurement electric current produce error |
Δ I |=| Im-Ireal|, measurement voltage produce error | Δ V |=| Vm-Vreal|.According to following equation：
Using high-precision permanent magnet gaussmeter, δBAbout 2%, δ in selected data collecting card measurementIAbout 0.5%, δV
Error about 0.5%, relative error can be tried to achieve for 2.0%.
Equally, the relative error of Seebeck coefficient is：
If δT,δVThe error respectively produced between temperature and voltage tester value and actual value, then can obtain equation below：
For δV, when the shelves selection of selected data capture card range is 15mv, its resolution ratio is less than 0.5 μ v, and itself
Transformed error be only 0.5%, so, δVValue be 0.5%.For δT, with △ T=10K, the μ v/K estimation errors of α=50, then
About 0.6%, and mainly have thermocouple error, A/D transformed errors and the error due to thermal contact resistance generation, we use
Pt-Pt-10%Rh thermocouple temperature measurements, because this kind of thermocouple has a random error in itself, such as 0-13000C time errors for ±
0.25%, according to error processing method, this error can be minimized by the method repeatedly measured, as with n measurement
Temperature arithmetic mean of instantaneous value substitute true temperature (T0) when standard deviation be：
Due to Microcomputer Collecting data readings quickly (each second gathers 10 points), we are read 200 times using each temperature spot,
Then average, when such as point for measuring temperature is 5000C, 100 times reading random error can be reduced to
Then resulting temperature difference error is 0.18K.And data collecting card gathers and is transformed into temperature value to the electric potential signal of thermocouple
During, with reference to the characteristic of Pt-Pt-10%Rh thermocouples, obtain in temperature >=00C, reading Th, the Tc at sample two ends are missed
It is poor equal<0.15K, then error is less than 0.3K.For the error produced due to thermal contact resistance, if contact material selection is proper, and
And machining accuracy is higher, it is ensured that sample contact is good, can be ignored substantially for this error.From this, altogether
The error of generation is about to be less than 0.48K, if with △ T=10K estimation errors, δT<4.8%, it can then be calculated according to above formula
The relative error for going out Seebeck coefficient is 4.3%.
MnTe+0.04Li2S materials Hall at normal temperatures and Seebeck coefficient are measured using this test system,
Test four groups of initial data such as Fig. 3,4,5,6 for every group of data fit come Seebeck coefficients progress be averaging
To average Seebeck coefficients, and with being entered with the test value of the similar type thermoelectricity parameter test systems of standard instrument HGTE- II
Row is compared, and has drawn deviation and error, such as table 1:
The Seebeck coefficient test data of table 1
Table 2 is carried out to survey Hall coefficient related data with similar standard instrument ECOPIAHMS-5500 test values
Contrast, has drawn deviation and error：
The Hall coefficient test data of table 2
Table 3 be measuring resistance rate related data, and with similar standard instrument ECOPIA HMS-5500 test values carry out pair
Than having drawn deviation and error：
The resistivity measurement data of table 3
As it will be easily appreciated by one skilled in the art that the foregoing is only presently preferred embodiments of the present invention, it is not used to
The limitation present invention, any modification, equivalent and the improvement made within the spirit and principles of the invention etc., it all should include
Within protection scope of the present invention.
Claims (9)
1. it is a kind of while measuring the device of Hall coefficient and Seebeck coefficient, it is characterised in that it includes straight trip slide rail (1), magnetic
Iron group (3,21), test probe (11,12,13,14) and primary heater (9),
Described straight trip slide rail (1) two ends are placed with a magnet frame (2,22), each magnet frame respectively is each provided with a pair of phases
Same group of magnets, the group of magnets (3,21) includes two permanent strong magnetic iron, described two permanent strong magnetic iron phases at a certain distance with
N-S modes are staggered relatively, and two pairs of group of magnets (3,21) produce identical, the in opposite direction magnetic field of size；
In the top of straight trip slide rail (1), a primary heater (9) is provided with, two panels potsherd secondary heater (8,16) is separated by one
Set a distance is embedded in the middle of the primary heater (9) surface, and testing sample is placed on two panels potsherd secondary heater (8,16), institute
State four of primary heater (9) it is diagonal on be respectively arranged with stylet knob (10,12,15,17), the stylet knob (10,12,
15,17) one end that will test probe (11,12,13,14) is fixed, the position for adjusting test probe (11,12,13,14),
The other end of the test probe (11,12,13,14) respectively positioned at four of sample surfaces it is diagonal on, for measuring sample
Cold end and hot-side temperature, the primary heater (9), potsherd secondary heater (8,16), stylet knob (10,12,15,17), survey
Sound out pin (11,12,13,14) and sample be placed in heat shield (5),
One end of the straight trip slide rail (1) is connected with motor (25), and motor driving straight trip slide rail (1) is mobile, with straight trip slide rail
(1) testing sample in movement, the heat shield (5) is moved between two group of magnets (3,21), suffered by testing sample
Magnetic field change.
2. device as claimed in claim 1, it is characterised in that be additionally provided with a thermocouple (6) in the primary heater (9),
Temperature for measuring primary heater.
3. device as claimed in claim 1 or 2, it is characterised in that institute is realized by the stylet knob (10,12,15,17)
State the left and right of test probe (11,12,13,14), adjust up and down, the test probe (11,12,13,14) is passed through electric current, is used for
Measure the voltage or temperature of sample edge.
4. device as claimed in claim 3, it is characterised in that filled with protective gas in the heat shield (5), and it is described heat-insulated
It is double-decker to cover (5).
5. device as claimed in claim 4, it is characterised in that described two group of magnets (3,21), primary heater (9), ceramics
Piece secondary heater (8,16), test probe (11,12,13,14) and motor (25) are connected from different control modules respectively, pass through
Computer control realization automatic operating.
6. it is a kind of while measuring the method for Hall coefficient and Seebeck coefficient, it is characterised in that using as claimed in claim 5
Measurement apparatus carry out according to the following steps：
S1. prepare testing sample, make that the thickness of testing sample is generally uniform, size is symmetrical；
S2. ready testing sample is placed on two potsherd secondary heaters (8) on primary heater (9), and adjusted
The position of probe (11,12,13,14) is tested well；
S3. by the primary heater (9) by ambient temperature to required temperature, on test probe (11,12,13,14)
Apply electric current, respectively in positive flux field, negative fluxfield and without in magnetic field environment, tested using vanderburg method between relative two probes
Electrical potential difference；
S4. ambient temperature to required temperature is utilized into the potsherd secondary heater (8) by the primary heater (9)
The temperature difference is set up to testing sample two ends, the voltage difference between now four test probes (11,12,13,14) and four are measured
Test the temperature value of probe (11,12,13,14)；
S5. the data obtained according to being measured in step S4 and S5, calculate the Hall coefficient and Seebeck coefficient of testing sample.
7. method as claimed in claim 6, it is characterised in that in step s 2, when installing sample to be measured, is first opened heat-insulated
Cover (5), sample to be measured is placed on two potsherd secondary heaters (8), four stylet knobs of rotation (10,12,15,
17) so that four test probes (11,12,13,14) corresponding to stylet knob (10,12,15,17) are located at testing sample side
Edge, by moving up and down stylet knob (10,12,15,17) such that test probe (11,12,13,14) is contacted well, Ran Houguan
Close heat shield (5).
8. method as claimed in claim 7, it is characterised in that in step s3, measures specific during the electrical potential difference of testing sample
Comprise the following steps：
S31. the initial temperature of testing sample is measured, using the primary heater (9) by ambient temperature to initial temperature, etc.
Certain time is treated, makes temperature stabilization；
S32. apply electric current on test probe, respectively in positive flux field, negative fluxfield and without in magnetic field environment, surveyed using vanderburg method
Electrical potential difference between two diagonal probes of examination；
S33. the primary heater (9) after after temperature stabilization, carries out ambient temperature to the next temperature for needing to measure
The potential difference measurements of next temperature；
S34. S31-S33 operation is repeated, until completing the measurement of all assigned temperatures.
9. method as claimed in claim 8, it is characterised in that specifically include following steps in step s 4：
S41 utilizes the primary heater (9) that to required temperature, ambient temperature is treated into temperature stabilization；
S42 connects the potsherd secondary heater (8), is set up to testing sample two ends after the temperature difference and is momentarily turned off the potsherd pair
Heater (8)；
S43 measure voltage differences between four tests probe (11,12,13,14) and four test probes (11,12,
13,14) temperature value.
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Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN114354678A (en) * | 2020-10-13 | 2022-04-15 | 中国科学院化学研究所 | Device, method and system for testing performance parameters of thin film thermoelectric material |
| CN115963148A (en) * | 2022-11-24 | 2023-04-14 | 安徽光智科技有限公司 | Hall measurement device and method based on mercury cadmium telluride material |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1365007A (en) * | 2000-12-04 | 2002-08-21 | 常绿韩国株式会社 | Device and method for measuring Hull effect |
| KR100419005B1 (en) * | 2000-12-04 | 2004-02-14 | 상록코리아 (주) | Measurement apparatus and measurement method of hall effect |
| CN201041559Y (en) * | 2007-05-11 | 2008-03-26 | 华中科技大学 | A device for measuring semiconductor thin film material Seebeck coefficient and resistance rate |
| CN105628732A (en) * | 2015-12-23 | 2016-06-01 | 华中科技大学 | Device for measuring Seebeck coefficient and method of device |
-
2017
- 2017-03-14 CN CN201710148301.2A patent/CN106950484B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1365007A (en) * | 2000-12-04 | 2002-08-21 | 常绿韩国株式会社 | Device and method for measuring Hull effect |
| KR100419005B1 (en) * | 2000-12-04 | 2004-02-14 | 상록코리아 (주) | Measurement apparatus and measurement method of hall effect |
| CN201041559Y (en) * | 2007-05-11 | 2008-03-26 | 华中科技大学 | A device for measuring semiconductor thin film material Seebeck coefficient and resistance rate |
| CN105628732A (en) * | 2015-12-23 | 2016-06-01 | 华中科技大学 | Device for measuring Seebeck coefficient and method of device |
Non-Patent Citations (1)
| Title |
|---|
| 王艳荣: "一种测量霍耳系数和电阻率的方法", 《科技展望》 * |
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