CN110988028A - Seebeck coefficient automatic measuring device - Google Patents
Seebeck coefficient automatic measuring device Download PDFInfo
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- CN110988028A CN110988028A CN201911300341.XA CN201911300341A CN110988028A CN 110988028 A CN110988028 A CN 110988028A CN 201911300341 A CN201911300341 A CN 201911300341A CN 110988028 A CN110988028 A CN 110988028A
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- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/20—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity
Abstract
The invention discloses an automatic measuring device for a Seebeck coefficient. The invention relates to the technical field of measurement of a Seebeck coefficient of a thermoelectric material, which comprises a vacuum cavity (13), and an insulating heat-insulating plate (1), two thermoelectric pieces (2), a sample (3), two temperature probes (4), a pressure pin (5), an electrode probe (6), a temperature acquisition module (7), a temperature control module (8), a voltage acquisition module (9), a single chip microcomputer control system (10), a temperature \ voltage display module (11) and a power supply (12) which are arranged in the vacuum cavity (13); the device can complete the automatic measurement of the Seebeck coefficient of the sample according to the preset temperature measurement interval and the preset measurement period, simplify the measurement process and improve the measurement efficiency. Moreover, a single chip microcomputer control system is used for detection and control, so that the voltage and the temperature at two ends of the sample can be displayed in real time, and the operation and the judgment of personnel are facilitated.
Description
Technical Field
The invention relates to the technical field of measurement of a Seebeck coefficient of a thermoelectric material, in particular to an automatic Seebeck coefficient measuring device.
Background
The energy crisis and environmental deterioration are two serious problems facing mankind in the 21 st century. According to the analysis and prediction of the demand of human beings on energy at present, fossil fuel resources are exhausted from 2050 to 2100 years. The fossil fuel can generate a large amount of industrial waste heat in the using process, so that the energy is greatly wasted. Therefore, it is extremely necessary to study the recycling of these waste heat. Thermoelectric technology has become a core technology in waste heat recovery and utilization because of its ability to directly convert thermal energy and electric energy, and research on thermoelectric materials has attracted great attention in recent years
The performance of a thermoelectric material is generally characterized by a seebeck coefficient, i.e., a voltage difference generated by the thermoelectric material under a certain temperature difference. At present, a mature Seebeck coefficient measuring device is available on the market, but the Seebeck coefficient measuring device is mainly used for measuring the Seebeck coefficient of a block-shaped thermoelectric material, mainly imported equipment and is expensive. But with the rapid development of miniature devices such as sensors of the internet of things, wireless sensors and wearable devices, great demands are made on the miniaturization of devices. The thin film type thermoelectric material based thermoelectric conversion device has the characteristics of miniaturization, all solid state, silence, low maintenance cost, long service life and the like, thereby drawing great attention of people. However, for the seebeck coefficient measuring device of the thin film type thermoelectric material, it is necessary to modify and upgrade commercial equipment. The seebeck coefficient measuring device for the thin-film thermoelectric material is still in the laboratory research and development stage or the primary mass production stage at present, and is expensive.
For Seebeck coefficient measuring devices developed in most laboratories, only one end of a sample is often heated, temperature difference is formed through thermal diffusion, the temperature difference cannot be flexibly controlled, a high-precision universal meter is often used, and the development cost of the system is greatly increased.
Disclosure of Invention
To solve the above problems; the invention provides an automatic measuring device for a Seebeck coefficient, which can realize automatic measurement of the Seebeck coefficient while ensuring the accuracy of measured data, and has the advantages of simple integral structure, simple and convenient operation and low price.
The technical scheme of the invention is as follows: an automatic measuring device for Seebeck coefficient comprises a vacuum cavity (13); an insulating heat-insulating plate (1), two thermoelectric pieces (2), a sample (3), two temperature probes (4), a pressing needle (5), an electrode probe (6), a temperature acquisition module (7), a temperature control module (8), a voltage acquisition module (9), a single-chip microcomputer control system (10), a temperature/voltage display module (11) and a power supply (12) are arranged in the vacuum cavity (13);
the two thermoelectric pieces (2) are arranged on the insulating heat-insulating plate (1) and are connected to the temperature control module (8) through a lead;
the sample (3) is fixedly arranged on the two thermoelectric pieces (2) through a pressing needle (5);
the two temperature probes (4) are respectively arranged at the cold end and the hot end of the sample (3) and are connected to the temperature acquisition module (7) through a lead;
one end of the electrode probe (6) is pressed on the surface of the sample (3), the other end is connected with the voltage acquisition module (9) through a lead,
the temperature acquisition module (7), the temperature control module (8) and the voltage acquisition module (9) are respectively connected to the single chip microcomputer control system (10) through leads, and the single chip microcomputer control system (10) is further respectively connected with the temperature \ voltage display module (11) and the power supply (12) through leads.
Furthermore, the vacuum cavity (13) is made of acrylic materials.
Furthermore, the insulating heat-insulating plate (1) is made of fiber paper bonded by high-temperature organic silicone resin through baking, heating and pressing, and is used for placing the two thermoelectric pieces (2) and the sample (3).
Further, the sample (3) includes a bismuth telluride-based alloy, a lead sulfide-based alloy, a lead selenide-based alloy, a skutterudite-structured material, a heusler alloy, a silicon-germanium alloy, an isoblock or a thin film thermoelectric material.
Further, the temperature acquisition module (7) is usually a resistance temperature sensing probe and a conversion chip.
Further, the temperature control module (8) is a voltage/current regulation unit employing proportional, integral and derivative control algorithms.
Further, the voltage acquisition module (9) comprises a 24-bit adc chip and an external reference voltage source.
Furthermore, the single chip microcomputer system (10) takes a 32-bit MCU chip as a control core, and controls the DC-DC driven by the half-bridge driving chip to apply voltage to the thermoelectric chip by outputting two paths of PWM waves.
Further, at each temperature point for testing the Seebeck coefficient, the temperature difference between the cold end and the hot end of the sample (3) is gradually increased from-3K to +3K, and the voltage difference is collected while the temperature difference is increased.
The invention has the beneficial effects that: 1. according to the invention, the test range of the temperature can be controlled by the single chip microcomputer control system, in order to obtain the Seebeck coefficient of each temperature point, the temperature difference is set to be gradually increased from-3K to 3K, for each random temperature difference, the corresponding voltage difference is measured while the temperature is measured, and the corresponding Seebeck coefficient can be obtained through fitting; because the temperature difference is random instead of being fixed at a certain temperature difference, the test time is greatly saved; 2. the device has the advantages of small volume, simple structure, easily obtained and assembled parts, low price, repeated use and easy realization of mass production.
Drawings
FIG. 1 is a schematic diagram of a system configuration according to an embodiment of the present invention;
FIG. 2 is a diagram illustrating the results of a nickel strip test according to an embodiment of the present invention;
the device comprises an insulating heat-insulating plate 1, a thermoelectric sheet 2, a thermoelectric sample 3, a temperature probe 4, a pressure pin 5, an electrode probe 6, a temperature acquisition module 7, a temperature control module 8, a voltage acquisition module 9, a single-chip microcomputer control system 10, a temperature/voltage display module 11, a power supply 12 and a vacuum cavity 13.
Detailed Description
The technical scheme of the invention is further explained in detail by combining the attached drawings:
the invention discloses an automatic measuring device for a Seebeck coefficient, which is used for measuring the Seebeck coefficient of a block or a thin-film thermoelectric material; the device can finish the automatic measurement of the Seebeck coefficient of the sample according to the preset temperature measurement interval and the preset measurement period, simplify the measurement process and improve the measurement efficiency.
As shown in fig. 1, an automatic measuring device for seebeck coefficient comprises a vacuum chamber (13); an insulated heat insulation board (1), two thermoelectric pieces (2), a sample (3), two temperature probes (4), a press pin (5), an electrode probe (6), a temperature acquisition module (7), a temperature control module (8), a voltage acquisition module (9), a singlechip control system (10), a temperature/voltage display module (11) and a power supply (12) are arranged in the vacuum cavity (13)
The two thermoelectric pieces (2) are arranged on the insulating heat-insulating plate (1) and are connected to the temperature control module (8) through a lead; the insulating heat-insulating plate (1) can prevent a circuit from being conducted with the cavity part, and can reduce energy loss caused by heat conduction of the thermoelectric chip to the cavity;
the sample (3) is fixedly arranged on the two thermoelectric pieces (2) through the pressing pin (5) so as to ensure that the testing position of the sample (3) is basically unchanged in the measuring process;
the two temperature probes (4) are sheet-shaped, are respectively arranged at the cold end and the hot end of the sample (3), and are connected to the temperature acquisition module (7) through a lead; it is in surface contact with the surface of the sample (3), so that the temperature measurement is more accurate.
One end of the electrode probe (6) is pressed on the surface of the sample (3), and the other end of the electrode probe is connected with the voltage acquisition module (9) through a lead;
the temperature acquisition module (7), the temperature control module (8) and the voltage acquisition module (9) are respectively connected to the single chip microcomputer control system (10) through leads, and the single chip microcomputer control system (10) is further respectively connected with the temperature \ voltage display module (11) and the power supply (12) through leads.
Further, the vacuum cavity (13) is usually made of acrylic material;
normally, a vacuum pump is used for pumping the vacuum cavity (13) to a low vacuum state; in addition, a gas channel is designed on the wall of the cavity, inert gas can be introduced to protect the testing environment of the sample (3), the vacuum cavity (13) is usually made of acrylic material with the thickness of about 40mm, and a small mechanical pump is used for pumping vacuum to protect the sample (3) from being oxidized in the testing process and reduce the influence of air disturbance; can be changed into a stainless steel cavity; a vacuum joint is reserved on the cavity wall and is used for connecting an external power supply; in addition, a gas path interface is reserved on the wall of the cavity and is used for introducing gases such as argon, nitrogen and the like to protect the test environment of the sample.
Furthermore, the insulating heat-insulating plate (1) is formed by baking, heating and pressing fiber paper bonded by high-temperature organic silicone resin, is used for placing the two thermoelectric pieces (2) and the sample (3), the sample (3) is fixed on the two thermoelectric pieces (2) through a pressing needle (5),
further, the sample (3) comprises a bismuth telluride-based alloy, a lead sulfide-based alloy, a lead selenide-based alloy, a skutterudite structure material, a heusler alloy, a silicon-germanium alloy, an isoblock or a thin film thermoelectric material;
further, the temperature acquisition module (7) detects the surface temperature of the thermoelectric sample (3) by using a resistance type temperature sensing probe and combining with a related conversion chip.
Further, the temperature control module (8) is a voltage regulation unit adopting proportional, integral and derivative control algorithms; two sets of heating units are arranged, and two ends of the sample (3) can be controlled to be respectively at different temperatures.
The device is provided with two sets of heating units, and the two ends of the sample (3) can be controlled to be respectively at different temperatures; the temperature setting range is room temperature (default 25 ℃) to 160 ℃; for the temperature collection of the surface of the sample (3), a resistance type temperature sensing probe is used and is combined with a temperature collection module (7) to obtain the temperature, and the temperature measurement error is less than +/-0.1 ℃.
Furthermore, the voltage acquisition module (9) comprises a 24-bit adc chip ads1256 and an external reference voltage source, and the measurement precision is less than or equal to +/-1.0 μ V.
Furthermore, the single chip microcomputer system (10) takes an STM32F103c8t6 chip of a 32-bit MCU as a control core, and controls DC-DC driven by a half-bridge driving chip IR2109 to apply voltage to the thermoelectric chip by outputting two paths of PWM waves;
the voltage of the heating unit can be automatically controlled, the temperature measuring range is controlled, and the voltage difference of the cold and hot ends of the sample can be rapidly measured (the temperature measuring range of the Seebeck coefficient and the voltage of the heating unit are controlled and measured by using a single chip microcomputer control system (10) (STM32F103), and the voltage difference of the cold and hot ends of the sample can be rapidly measured).
Further, at each temperature point for testing the Seebeck coefficient, the temperature difference of the cold end and the hot end of the sample (3) is gradually increased from-3K to +3K, a plurality of temperature difference points are arranged, and the voltage difference is collected while the temperature difference is increased.
Seebeck coefficient is used to characterize the thermoelectric conversion capability of a sample, usually by
Wherein VC、VH、TCAnd THRespectively representing the voltage and temperature across the cold and hot ends of the sample (3). In order to obtain the Seebeck coefficient of each temperature point, the temperature difference of the cold end and the hot end of the sample (3) is set within a range of +/-3K through a single chip microcomputer control system (10), a plurality of temperature difference points are randomly collected when the temperature changes gradually, and the voltage difference is collected simultaneously; and performing linear fitting on the corresponding voltage difference under each acquired temperature difference to obtain the Seebeck coefficient of the corresponding temperature point.
FIG. 2 shows the test results of the nickel strip of the embodiment of the present invention; wherein the test temperature is 80 ℃, the test temperature difference range is +/-3K, and three times of repeated measurement are carried out; the voltage difference and the temperature difference of each measurement show a good linear relation, and the three results are basically consistent, thereby showing the good repeatability of the test system.
The invention can automatically measure the Seebeck coefficient of the block or film thermoelectric material, the temperature difference of the two ends of the sample (3) can be flexibly set, and various modules are placed in the vacuum cavity, thus the device has small volume and low price.
Claims (9)
1. An automatic measuring device for Seebeck coefficient is characterized by comprising a vacuum cavity (13); an insulating heat-insulating plate (1), two thermoelectric pieces (2), a sample (3), two temperature probes (4), a pressing needle (5), an electrode probe (6), a temperature acquisition module (7), a temperature control module (8), a voltage acquisition module (9), a single-chip microcomputer control system (10), a temperature/voltage display module (11) and a power supply (12) are arranged in the vacuum cavity (13);
the two thermoelectric pieces (2) are arranged on the insulating heat-insulating plate (1) and are connected to the temperature control module (8) through a lead;
the sample (3) is fixedly arranged on the two thermoelectric pieces (2) through a pressing needle (5);
the two temperature probes (4) are respectively arranged at the cold end and the hot end of the sample (3) and are connected to the temperature acquisition module (7) through a lead;
one end of the electrode probe (6) is pressed on the surface of the sample (3), the other end is connected with the voltage acquisition module (9) through a lead,
the temperature acquisition module (7), the temperature control module (8) and the voltage acquisition module (9) are respectively connected to the single chip microcomputer control system (10) through leads, and the single chip microcomputer control system (10) is further respectively connected with the temperature \ voltage display module (11) and the power supply (12) through leads.
2. The automatic seebeck coefficient measuring device according to claim 1, wherein: the vacuum cavity (13) is made of acrylic materials.
3. The automatic seebeck coefficient measuring device according to claim 1, wherein: the insulating heat-insulating plate (1) is formed by baking, heating and pressing fiber paper bonded by high-temperature organic silicone resin and is used for placing the two thermoelectric pieces (2) and the sample (3).
4. The automatic seebeck coefficient measuring device according to claim 1, wherein: the sample (3) comprises bismuth telluride-based alloy, lead sulfide-based alloy, lead selenide-based alloy, skutterudite structure material, heusler alloy, silicon-germanium alloy, and the like bulk or thin film thermoelectric material.
5. The automatic seebeck coefficient measuring device according to claim 1, wherein: the temperature acquisition module (7) is usually a resistance temperature sensing probe and a conversion chip.
6. The automatic seebeck coefficient measuring device according to claim 1, wherein: the temperature control module (8) is a voltage/current regulation unit employing proportional, integral and derivative control algorithms.
7. The automatic seebeck coefficient measuring device according to claim 1, wherein: the voltage acquisition module (9) comprises a 24-bit adc chip and an external reference voltage source.
8. The automatic seebeck coefficient measuring device according to claim 1, wherein: the single chip microcomputer system (10) takes a 32-bit MCU chip as a control core, and controls DC-DC driven by a half-bridge driving chip to apply voltage to the thermoelectric chip by outputting two paths of PWM waves.
9. The automatic Seebeck coefficient measuring device according to claims 1 to 8, wherein at each temperature point for testing the Seebeck coefficient, the temperature difference between the cold end and the hot end of the sample (3) is set to gradually increase from-3K to +3K, and the voltage difference is collected while the temperature difference increases.
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Application publication date: 20200410 |