CN106950484B - Device and method that is a kind of while measuring Hall coefficient and Seebeck coefficient - Google Patents
Device and method that is a kind of while measuring Hall coefficient and Seebeck coefficient Download PDFInfo
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- CN106950484B CN106950484B CN201710148301.2A CN201710148301A CN106950484B CN 106950484 B CN106950484 B CN 106950484B CN 201710148301 A CN201710148301 A CN 201710148301A CN 106950484 B CN106950484 B CN 106950484B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/20—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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Abstract
The invention belongs to semiconductor material the field of test technology, more particularly to a kind of device and method for measuring Hall coefficient and Seebeck coefficient simultaneously, the device includes straight trip sliding rail, group of magnets, test probe and primary heater, straight trip sliding rail both ends are placed with a magnet frame respectively, a pair of identical group of magnets is each provided in each magnet frame, the top of straight trip sliding rail is arranged in primary heater, sample to be tested is placed on the two panels potsherd secondary heater on primary heater surface, test probe is additionally provided on primary heater, motor driven straight trip sliding rail is mobile.The invention also discloses the methods using above-mentioned apparatus measurement Hall coefficient and Seebeck coefficient.The problem high to measurement shape need in effective solution of the present invention Seebeck coefficient measurement, the material of different size shape can be measured, the measurement of Hall coefficient and Seebeck coefficient at different temperatures is also achieved, automatic operation is realized, measuring accuracy is high.
Description
Technical field
The invention belongs to semiconductor material the field of test technology, and in particular to a kind of to measure Hall coefficient and Seebeck simultaneously
The device and method of coefficient can complete the measurement of Hall and Seebeck coefficient under different temperatures.
Background technique
Hall coefficient and Seebeck coefficient play in semiconducter research field as the important parameter for measuring material properties
Extremely important effect.By measuring Hall coefficient, conduction type, carrier concentration and the carrier of semiconductor material can be judged
The important parameters such as mobility also can determine forbidden bandwidth, the impurity electricity of semiconductor by Hall coefficient with the variation of temperature
From etc. performance parameters.Seebeck coefficient is ground as the important parameter for measuring heat to electricity conversion performance in the thermoelectric material of extensive concern
Important in inhibiting in hair.The conversion efficiency of thermoelectric of thermoelectric material depends primarily on figure of merit ZT, expression formula are as follows:
Wherein, α is Seebeck coefficient, and σ is conductivity, and k is thermal conductivity, and T is temperature.The size of Seebeck coefficient is to thermoelectricity
The figure of merit has great influence, the Seebeck coefficient of precise measurement material, and evaluation and research for pyroelectric material performance have weight
The practical significance wanted.Therefore, exploitation can measure the device of Hall coefficient and Seebeck coefficient, lead in semiconductor and thermoelectric material
Domain is of great significance.
Currently, Hall test instrument developed can in high pressure, for gas sensitive and tens micron-scale samples
Etc. different conditions test device, mostly use electromagnetic field device in Hall test, electromagnetic field is bulky, and structure is complicated, cost
It is more expensive, and there are signal noises, also there is relevant patent, but there is manual operation magnet in some patents, it is not carried out certainly
Dynamicization test, and there is no related detailed testing process and data processing sides for Hall effect measurement in most of patent
Case.Seebeck coefficient test equipment also develops associated test devices, measurement method be totally divided into the direct method of measurement, static method and
Dynamic method, the direct method of measurement can introduce parasitic electromotive force, and measurement error is larger, and static method measurement efficiency is low, be difficult to control to temperature
System, and most of device is all the measurement of two probe block materials at present, requires when to material processing, needs measured thin film
When, two sonde methods can not be completed to measure, and on this basis, the device of a small number of measurement thin-film materials, such as patent " one occur
The devices and methods therefor of kind measurement Seebeck coefficient: it is Chinese, one kind four is mentioned in CN105628732A [P] .20160601 " to be visited
The dynamic method of needle, it is more accurate to measure Seebeck coefficient.But above-mentioned apparatus all can only single realization measurement Hall coefficient or
It is Seebeck coefficient, measurement Hall coefficient and Seebeck coefficient can be realized by not being found same device at present.
Since there are drawbacks described above and deficiency, this field needs to make and further improve, a kind of measurement is designed
Method can measure Hall coefficient and Seebeck coefficient under different temperatures simultaneously, realize the measurement of automation.
Summary of the invention
Aiming at the above defects or improvement requirements of the prior art, Hall coefficient and plug are measured simultaneously the present invention provides a kind of
The device and method of seebeck coefficient.The test device combines the similarity of Hall coefficient and Seebeck coefficient in testing,
The measurement of Hall and Seebeck coefficient under different temperatures, Hall coefficient and resistivity are completed using four probe combination permanent magnet groups
Measurement uses vanderburg method, and Seebeck coefficient measurement uses four probe test methods, effective solution Seebeck coefficient survey
The problem high to measurement shape need in amount, and traditional Hall effect measurement device is improved, measurement different size is realized,
Material of different shapes, and the measurement of Hall coefficient and Seebeck coefficient at different temperatures is also achieved, two kinds are surveyed
Examination focuses on a device, and structure is simple, and small volume has saved cost and space, which realizes automatic operation, surveys
It is high to try precision.
To achieve the above object, according to one aspect of the present invention, it provides a kind of while measuring Hall coefficient and Sai Bei
The device of gram coefficient, which is characterized in that including straight trip sliding rail, group of magnets, test probe and primary heater,
The straight trip sliding rail both ends are placed with a magnet frame respectively, are each provided with a pair of identical magnet in each magnet frame
Group, the group of magnets include two permanent strong magnetic iron, and described two permanent strong magnetic iron phases are opposite in a manner of N-S at a certain distance to put
It sets, two pairs of group of magnets generate identical, the contrary magnetic field of size；
The top of straight trip sliding rail is arranged in the primary heater, and two panels potsherd secondary heater is separated by a distance to be embedded in institute
It states among primary heater surface, sample to be tested is placed on two panels potsherd secondary heater, and four of the primary heater are diagonal
On be respectively arranged with stylet knob, the stylet knob fixes the one end for testing probe, for adjust test probe position,
The other end of the test probe be located at four of sample surfaces it is diagonal on, for measuring the cold end and hot end temperature of sample
Degree, the primary heater, potsherd secondary heater, stylet knob, test probe and sample are placed in heat shield,
One end of the straight trip sliding rail is connected to motor, and motor driven sliding rail of keeping straight on is mobile, with the movement of straight trip sliding rail,
Sample to be tested in the heat shield moves between two group of magnets, and magnetic field suffered by sample to be tested changes.
It is further preferred that a thermocouple is additionally provided in the primary heater, for measuring the temperature of primary heater.It is logical
Setting thermocouple is crossed, the temperature of primary heater can be accurately controlled, guarantees the accuracy of test.
Preferably, left and right, the up and down adjustment of the test probe are realized by the stylet knob, the test probe is logical
Enter electric current, for measuring the voltage or temperature of sample edge.After fixation of the test probe by the stylet knob, test
The position of probe can control, up and down adjustment three-dimensional is mobile, to realize the test of the sample to arbitrary size shape.It is logical
It crosses and is passed through electric current within the probe, the accuracy of test result can be improved.
Preferably, filled with protective gas in the heat shield, and the heat shield is double-layer structure.Using protective gas come
Test sample is protected, guarantees that sample itself is unaffected, and heat shield uses double-layer structure, then greatly improves heat insulation.
Specifically, one piece controllable for generating present invention employs the main body table top that three pieces of heaters are entire sample stage
Environment temperature primary heater, and other two fritters ceramic plate heater insertion primary heater on, for generating test cord shellfish
The temperature difference of gram coefficient, sample to be tested are placed on two pieces of ceramic secondary heaters, solve test process sample to be tested and sample stage
Insulation Problems, while also solving the problems, such as that measurement Hall coefficient and Seebeck coefficient temperature generate.It is carried out using four probes
Test, four probes complete voltage, the measurement of temperature, and can be passed through electric current in measurement Hall coefficient, so that test
It is more convenient, while the unique design of four probes, probe three-dimensional can be made mobile, compare other inventions, tested to material
Material and size, thickness requirement all reduce many.The permanent magnet of use is staggered relatively, generates magnetic field, uses four pieces of phases altogether
Same magnet generates two identical, contrary magnetic fields of size, and four blocks of magnet are fixed on designed straight trip sliding rail, comparison
In other inventions, permanent-magnetic field is used to make whole device structure simple, it is convenient, it takes up space small, low cost and there is no believe
Number noise, may be implemented the automatic test of Hall coefficient.
It is another aspect of this invention to provide that method that is a kind of while measuring Hall coefficient and Seebeck coefficient is provided,
It is characterized in that, is sequentially included the following steps: using above-mentioned measuring device
S1. prepare sample to be tested, keep the thickness of sample to be tested generally uniform, size is symmetrical；
S2. it on two potsherd secondary heaters ready sample to be tested being placed on primary heater, and regulates
Test the position of probe；
S3. environment temperature is heated to required temperature by the primary heater, applies electric current on test probe, respectively
In positive flux field, negative fluxfield and without in magnetic field environment, the potential difference between opposite two probes is tested using vanderburg method；
S4. environment temperature is heated to required temperature by the primary heater, is given using the potsherd secondary heater
The temperature difference is established at sample to be tested both ends, measures the temperature of the voltage difference and four test probes between four test probes at this time
Value；
S5. according to the data measured in step S4 and S5, Hall coefficient and the Seebeck system of sample to be tested are calculated
Number.
It is further preferred that in step s 2, when installing sample to be measured, first opening heat shield, sample to be measured is put
It sets on two potsherd secondary heaters, rotates four stylet knobs, so that four test probe positions corresponding to stylet knob
In sample to be tested edge, to test probe contact well by moving up and down stylet knob, be then shut off heat shield.
Preferably, in step s3, specifically comprise the following steps: when measuring the potential difference of sample to be tested
S31. the initial temperature for measuring sample to be tested, is heated to initial temperature for environment temperature using the primary heater,
Certain time is waited, temperature is stablized；
S32. apply electric current on test probe, respectively in positive flux field, negative fluxfield and without in magnetic field environment, using vanderburg
Potential difference between two diagonal probes of method test；
S33. environment temperature is heated to the next temperature for needing to measure by the primary heater, after temperature is stablized, into
The potential difference measurements of the next temperature of row；
S34. the operation of S31-S33 is repeated, until completing the measurement of all assigned temperatures.
This test method and process measure Hall coefficient using vanderburg method, resistivity, carrier concentration, more using method
Seebeck coefficient is measured for the test method that accurate four temperature-voltage measurements are averaged, realizes accurate measurement.
Preferably, specifically comprise the following steps: in step s 4
Environment temperature is heated to required temperature using the primary heater by S41, is stablized to temperature；
S42 connects the potsherd secondary heater, establishes after the temperature difference to sample to be tested both ends and is momentarily turned off the potsherd
Secondary heater；
S43 measures the temperature value of voltage difference and four test probes between four test probes.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, have the following advantages that and
The utility model has the advantages that
(1) measuring device of the invention realizes the measurement of Hall coefficient and Seebeck coefficient on same device, for the first time
It proposes using four probe measurement Halls and Seebeck coefficient device, in material properties research, especially thermoelectric material often
It needs to test Hall coefficient and Seebeck coefficient, two equipment must be used according to conventional, it is contemplated that Hall coefficient and Seebeck
Coefficient all needs measurement voltage and temperature, the present invention to be combined into one through the invention, complete by the test probe of particular design
At the measurement of voltage and temperature, and be added and can be automatically controled mobile group of magnets, add magnetic field, meet to Hall coefficient and
The measurement of Seebeck coefficient, save the cost reduce space, facilitate test.
(2) measuring device of the invention can measure arbitrary shape on measuring characteristic, can measure film, block-like
Semiconductor material.After fixation of four test probes by corresponding stylet knob, the position of probe can be controlled, upper and lower three
Dimension movement, to realize the test to sample arbitrary size shape.In conventional testing procedures, especially Seebeck is tested
In, most of two sonde methods tests all used, only can measuring block shape material, and the placement of sample there are certain requirements, and
It is not easy to install, therefore, for some specific materials, test difficulty will be caused using conventional equipment or can not be surveyed at all
Examination, the present invention solve this problem in that, and install also very convenient.
(3) the invention proposes the mating test methods and stream for measuring Hall coefficient and Seebeck coefficient device simultaneously
Journey.The device for measuring Hall coefficient and Seebeck coefficient simultaneously is different from other individually test Hall coefficient or Seebeck coefficients
Device, need to propose again and the new equipment matched test method process of institute and data processing scheme, this test method and stream
Cheng Caiyong vanderburg method measures Hall coefficient, resistivity, carrier concentration, using more accurate four temperature-voltages of method
The test method measurement Seebeck coefficient being averaged is measured, accurate measurement is realized.
(4) present invention using measurement Hall and Seebeck coefficient something in common, invented at the same can measure Hall with
The device of Seebeck coefficient can develop the semiconductor testing apparatus of a new generation with this, be conducive to the performance of semiconductor material
Detection and research exploitation, is with a wide range of applications.
Detailed description of the invention
The top view of the apparatus structure schematic diagram of measurement Hall coefficient and Seebeck coefficient while Fig. 1 is the present invention；
The main view of the apparatus structure schematic diagram of measurement Hall coefficient and Seebeck coefficient while Fig. 2 is the present invention；
Fig. 3 is first group of Δ T1And V1Initial data is fitted S1The curve graph of value；
Fig. 4 is second group of Δ T2And V2Initial data is fitted S2The curve graph of value；
Fig. 5 is third group Δ T3And V3Initial data is fitted S3The curve graph of value；
Fig. 6 is the 4th group of Δ T4And V4Initial data is fitted S4The curve graph of value.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
The apparatus structure schematic diagram that Hall coefficient and Seebeck coefficient are measured while Fig. 1 and 2 is the present invention, below with reference to
Attached drawing 1, the present invention will be further described in detail by Fig. 2, structure as shown in attached drawing 1-2, in figure 1 for straight trip guide rail, 3 and 21
It is the frame of fixed magnet for permanent strong magnetic iron, 2 and 22,24 be servo motor, and 25 be shaft coupling, and straight trip guide rail 1 passes through shaft coupling
Device is connected with servo motor, and magnet and frame are fixed on straight trip guide rail, and guide rail, which moves back and forth, can make sample be in different directions
Magnetic field under, 1,2,3,21,22,24,25 overall structure magnetic fields and transmission system in figure；5 be heat shield in figure, and 9 be to provide ring
The primary heater of border temperature, 8 and 16 provide 2 pieces of potsherd secondary heaters of the temperature difference for insertion, and 11,12,13,14 be four tests
Probe can be passed through electric current by power supply, and can measure voltage, and temperature, 7,10,15,17 be probe fixture, realize
The three-dimensional of probe is mobile, and 6 be the thermocouple being embedded in primary heater, can with HEATER FOR MEASURING temperature, thus to environment temperature into
Row control, 4 be helium or other protective gas bottles, needs to be passed through protective gas test at high temperature, 4-17 is sample stage system in figure
System；Module 18 is classical PID temperature control system, controls heating rate and heating temperature, is provided for environment reliable accurate
Temperature control, module 19 are that relay group generates current impulse, and passing through data collecting card for analog-signal transitions is number letter
Number, voltage and temperature are measured, module 23 is step motor control system, it is accurate to control guide rail displacement, so as to sample periphery
Magnetic field is controlled, and the temperature of secondary heater provides the temperature difference and can power off, and does not need PID control system, 18,19,23 pass through USB
Serial ports 20 is communicated with computer, selects the c# of Microsoft as the development language of test software, realizes that test is computer one
Bodyization control acquisition, calculates, the process of display output, 18,19,20,23 and computer forming control system.
It is international, domestic all without related unified standard due to being tested at present for Hall and Seebeck coefficient.To sheet sample
Product test also rare corresponding test structure, while under the new test device of the present invention, the test mark of science, system, specification
Quasi- process and reasonable data processing method also vacancy.Will be detailed below being described in detail is the stream of entire test process
Journey and data processing section.
The invention also discloses a kind of methods for measuring Hall coefficient and Seebeck coefficient simultaneously, specifically include following step
It is rapid:
1. sample standard
Sample should be that thickness is uniform, material of the size between 8mm*8mm-20*20mm, and sample perimeter and thickness of sample are full
Sufficient Lp is more than or equal to 15t, and wherein Lp is perimeter, and t is thickness, and sample size is recommended symmetrically, with a thickness of 1mm (to be detailed in ASTM:F76-
08)。
2. test process
Sample installation: sample to be tested is placed on sample stage, and probe is fixed on sample by rotation knob 7,10,15,17
Edge guarantees test probe 11,13 and test probe 12,14 on the diagonal as far as possible, while should guarantee entire sample position as far as possible
In sample stage center.Heat-insulating and sealing cover is installed, installation is completed.
Contact detection: should detect whether four probe contacts contact well with sample first, the corresponding current that can be broken with official under county magistrate who administers lawsuit, etc.,
Whether the correlation of voltage is good to learn contact of the probe with sample.
The measurement of Hall coefficient and resistivity
Testing initial sample temperature, (environment temperature is heated to required initial temperature by computer Control PID, primary heater 9
Degree waits certain time, so that temperature is stablized)
Probe 11 will be tested, 12,13,14 are denoted as a respectively, b, c, d.In the magnetic field environment that size is+B, minimum electricity
It flows pulse to flow into from probe a, c outflow measures voltage Vd-Vc, and the voltage of measurement is expressed as Vac, dc (+B).To sample temperature base
Originally it remains unchanged, according to the method, test is divided into 3 times: for the first time in the case where magnetic field size is+B, measuring Vca, db (+B),
Vac, db (+B), Vdb, ac (+B), Vbd, ac (+B)；Sliding rail of keeping straight on is mobile, for the second time in the environment in not magnetic field, measures
Vba, cd, V ab, ca, Vcb, da, Vbc, da；Straight trip sliding rail moves again, makes under the size-B of sample magnetic field, measurement Vac, db (-
B), Vca, db (- B), Vbd, ac (- B), Vdb, ac (- B)
Carry out next temperature spot measurement (computer Control PID, primary heater 9 by environment temperature be heated to it is required under
One temperature waits certain time, so that temperature is stablized)
B, C operation are repeated, until completing assigned temperature measurement.
The measurement of Seebeck coefficient
Environment temperature is heated to required by heating devices heat to initial temperature, computer Control PID, primary heater 9
Initial temperature waits certain time, to temperature, connects potsherd secondary heater 8, potsherd secondary heater 8 gives sample two
End is momentarily turned off after establishing the temperature difference, needs to keep variation of ambient temperature little in establishment process.The hot and cold side temperature of detection at this time
Average value, need to be almost the same with environment temperature.Record voltage between probe 11,13, voltage between probe 11,14, probe 12,13
Between voltage, the temperature value of voltage and four probes 11,12,13,14 is denoted as TA, TB, TC, TD between probe 12,14.
3. data processing
By the data measured according to following specific formula, Hall coefficient Rh and electricalresistivityρ can be acquiredav, so as to find out
Carrier mobility μ:
The calculating of Hall coefficient:
The calculating of resistivity:
Wherein f1 and f2 and function Q1 and Q2 has corresponding relationship, specifically refers to pertinent literature, such as (ASTM:F76-
08)
Carrier mobility μ:
The calculating of Seebeck coefficient:
According to TA, TC in data, the temperature difference of the two is acquired, Δ T1 is denoted as
ΔT1=TA-TC
Further according to the voltage between the probe 11,13 measured in every group of data, it is denoted as Δ V1,
According to the multiple groups Δ T1 and Δ V1 calculated, by following formula
ΔT1=S1ΔV1+B1
It fits and carrys out the Seebeck coefficient value that slope S 1 as acquires
Similarly, TA is sought, the temperature difference of both TD is denoted as Δ T2
ΔT2=TA-TD
Further according to the voltage between the probe 11,14 measured in every group of data, it is denoted as Δ V2,
According to the multiple groups Δ T2 and Δ V2 calculated, by same fitting formula
ΔT2=S2ΔV2+B2
It fits and carrys out another Seebeck coefficient value that slope S 2 as acquires
TB is sought, the temperature difference of both TC is denoted as Δ T3
ΔT3=TB-TC
Further according to the voltage between the probe 12,13 measured in every group of data, it is denoted as Δ V3,
According to the multiple groups Δ T3 and Δ V3 calculated, by same fitting formula
ΔT3=S3ΔV3+B3
It fits and carrys out the third Seebeck coefficient value that slope S 3 as acquires.
TB is sought, the temperature difference of both TD is denoted as Δ T4
ΔT4=TB-TD
Further according to the voltage between the probe 12,14 measured in every group of data, it is denoted as Δ V4,
According to the multiple groups Δ T4 and Δ V4 calculated, by same fitting formula
ΔT4=S4ΔV4+B4
It fits and carrys out the 4th Seebeck coefficient value that slope S 4 as acquires
The average value for acquiring S1, S2, S3, S4 again, is denoted as S,
The Seebeck coefficient that obtained coefficient S as finally acquires.
4. error analysis
During measuring Hall coefficient, due to the generation of Hall effect, other effects can be supervened, such as mismatch electricity
Pressure difference, Ai Tinghaosen effect, one leduc effect of inner discipline, Nernst effect, thermocurrent not error caused by equipotential, these mistakes
Difference is that the main source of systematic error can largely eliminate these systematic errors by the vanderburg method of comparatively perfect.
Equally, there is also relative errors caused by measurement, survey Hall coefficient for vanderburg method, relative error can table
It is shown as:
In formula, | Δ Rhal|=| Rh-Rreal|,RhFor the value of the Hall coefficient of measurement, RrealFor true Hall coefficient, produce
It is raw | Δ Rhal| factor derive from: to measurement magnetic field generate error | Δ B |=| Bm-Breal|, measurement electric current generate error |
Δ I |=| Im-Ireal|, measurement voltage generate error | Δ V |=| Vm-Vreal|.According to following equation:
Using high-precision permanent magnet gaussmeter, δBAbout 2%, δ in selected data collecting card measurementIAbout 0.5%, δV
Error about 0.5%, can acquire relative error be 2.0%.
Equally, the relative error of Seebeck coefficient are as follows:
If δT,δVThe error respectively generated between temperature and voltage tester value and true value, then can be obtained following formula:
For δV, when selected data capture card range shelves are selected as 15mv, resolution ratio less than 0.5 μ v, and itself
Transformed error be only 0.5%, so, δVValue be 0.5%.For δT, with △ T=10K, the μ v/K estimation error of α=50, then
About 0.6%, and mainly have thermocouple error, A/D transformed error and the error due to thermal contact resistance generation, we use
Pt-Pt-10%Rh thermocouple temperature measurement, since this kind of thermocouple itself has a random error, such as in 0-13000C error be ±
0.25%, according to error processing method, this error can be minimized by the method repeatedly measured, as measured with n times
Temperature arithmetic mean of instantaneous value substitutes standard deviation when true temperature (T0) are as follows:
Quickly (each second acquires 10 points) due to Microcomputer Collecting data readings, we are read 200 times using each temperature spot,
Then be averaged, as temperature measuring point be 5000C when, 100 times reading random error can be reduced toThen resulting temperature difference error is 0.18K.And data collecting card is to thermocouple
Electric potential signal acquires and during being transformed into temperature value, in conjunction with the characteristic of Pt-Pt-10%Rh thermocouple, obtain temperature >=
When 00C, reading Th, Tc error at sample both ends < 0.15K, then error is less than 0.3K.For the mistake generated due to thermal contact resistance
Difference, if contact material selection is proper, and machining accuracy is relatively high, guarantees that sample contact is good, basic for this error
It can be ignored.From this, the error generated in total is about less than 0.48K, if with △ T=10K estimation error,
δT< 4.8%, the relative error that Seebeck coefficient can be then calculated according to above formula is 4.3%.
MnTe+0.04Li2S material Hall at normal temperature and Seebeck coefficient are measured using this test macro,
Test four groups of initial data such as Fig. 3,4,5,6 for every group of data fit come Seebeck coefficient be averaging
To average Seebeck coefficient, and with the test value of similar II type thermoelectricity parameter test system of standard instrument HGTE- into
Row compares, and has obtained deviation and error, such as table 1:
1 Seebeck coefficient test data of table
Table 2 is to survey Hall coefficient related data, and carry out with similar standard instrument ECOPIA HMS-5500 test value
Comparison, has obtained deviation and error:
2 Hall coefficient test data of table
Table 3 is measuring resistance rate related data, and carries out pair with similar standard instrument ECOPIA HMS-5500 test value
Than having obtained deviation and error:
3 resistivity measurement data of table
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (9)
1. a kind of device for measuring Hall coefficient and Seebeck coefficient simultaneously, which is characterized in that it includes straight trip sliding rail (1), magnetic
Iron group (3,21), test probe (11,12,13,14) and primary heater (9),
Straight trip sliding rail (1) both ends are placed with a magnet frame (2,22) respectively, are each provided with a pair of of phase in each magnet frame
Same group of magnets, the group of magnets (3,21) include two permanent strong magnetic iron, described two permanent strong magnetic iron phases at a certain distance with
N-S mode is staggered relatively, and the group of magnets (3,21) generates identical, the contrary magnetic field of size；
In the top of straight trip sliding rail (1), it is provided with a primary heater (9), two panels potsherd secondary heater (8,16) is separated by one
Set a distance is among the primary heater (9) surface, and sample to be tested is placed on two panels potsherd secondary heater (8,16), institute
State four of primary heater (9) it is diagonal on be respectively arranged with stylet knob (10,12,15,17), the stylet knob (10,12,
15,17) one end for testing probe (11,12,13,14) is fixed, for adjusting the position of test probe (11,12,13,14),
The other end of the test probe (11,12,13,14) be located at four of sample surfaces it is diagonal on, for measuring sample
Cold end and hot-side temperature, the primary heater (9), stylet knob (10,12,15,17), are surveyed potsherd secondary heater (8,16)
It sounds out needle (11,12,13,14) and sample is placed in heat shield (5),
One end of straight trip sliding rail (1) is connect with motor (25), and motor driven straight trip sliding rail (1) is mobile, with straight trip sliding rail
(1) movement, the sample to be tested in the heat shield (5) moves between two group of magnets (3,21), suffered by sample to be tested
Magnetic field change.
2. device as described in claim 1, which is characterized in that a thermocouple (6) are additionally provided in the primary heater (9),
For measuring the temperature of primary heater.
3. device as claimed in claim 1 or 2, which is characterized in that realize institute by the stylet knob (10,12,15,17)
Left and right, the up and down adjustment of test probe (11,12,13,14) are stated, the test probe (11,12,13,14) is passed through electric current, is used for
Measure the voltage or temperature of sample edge.
4. device as claimed in claim 3, which is characterized in that filled with protective gas in the heat shield (5), and it is described heat-insulated
Covering (5) is double-layer structure.
5. device as claimed in claim 4, which is characterized in that described two group of magnets (3,21), primary heater (9), ceramics
Piece secondary heater (8,16), test probe (11,12,13,14) and motor (25) are connected from different control modules respectively, pass through
Automatic operating is realized in computer control.
6. a kind of method for measuring Hall coefficient and Seebeck coefficient simultaneously, which is characterized in that using as claimed in claim 5
Measuring device sequentially include the following steps:
S1. prepare sample to be tested, keep the thickness of sample to be tested generally uniform, size is symmetrical；
S2. ready sample to be tested is placed on two potsherd secondary heaters (8,16) on primary heater (9), and adjusted
Save the position of test probe (11,12,13,14)；
S3. environment temperature is heated to required temperature by the primary heater (9), in test probe (11,12,13,14)
Apply electric current, respectively in positive flux field, negative fluxfield and without in magnetic field environment, is tested between opposite two probes using vanderburg method
Potential difference；
S4. environment temperature is heated to required temperature by the primary heater (9), using the potsherd secondary heater (8,
16) temperature difference is established to sample to be tested both ends, measures the voltage difference and four between four test probes (11,12,13,14) at this time
The temperature value of a test probe (11,12,13,14)；
S5. according to the data measured in step S3 and S4, the Hall coefficient and Seebeck coefficient of sample to be tested are calculated.
7. method as claimed in claim 6, which is characterized in that in step s 2, when installing sample to be measured, first open heat-insulated
Cover (5), sample to be measured is placed on two potsherd secondary heaters (8,16), rotate four stylet knobs (10,12,15,
17), so that four test probes (11,12,13,14) corresponding to stylet knob (10,12,15,17) are located at sample to be tested side
Edge makes test probe (11,12,13,14) contact good, then closes by moving up and down stylet knob (10,12,15,17)
Close heat shield (5).
8. the method for claim 7, which is characterized in that in step s3, measure specific when the potential difference of sample to be tested
Include the following steps:
S31. the initial temperature for measuring sample to be tested, is heated to initial temperature for environment temperature using the primary heater (9), etc.
To certain time, stablize temperature；
S32. apply electric current on test probe, respectively in positive flux field, negative fluxfield and without in magnetic field environment, surveyed using vanderburg method
Potential difference between two diagonal probes of examination；
S33. environment temperature is heated to the next temperature for needing to measure by the primary heater (9), after temperature is stablized, is carried out
The potential difference measurements of next temperature；
S34. the operation of S31-S33 is repeated, until completing the measurement of all assigned temperatures.
9. method according to claim 8, which is characterized in that specifically comprise the following steps: in step s 4
Environment temperature is heated to required temperature using the primary heater (9) by S41, is stablized to temperature；
S42 connects the potsherd secondary heater (8,16), establishes after the temperature difference to sample to be tested both ends and is momentarily turned off the ceramics
Piece secondary heater (8,16)；
S43 measure voltage differences between four tests probe (11,12,13,14) and four test probes (11,12,
13,14) temperature value.
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