CN116079504A - Method and device for stabilizing polishing removal rate of sapphire substrate - Google Patents
Method and device for stabilizing polishing removal rate of sapphire substrate Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims abstract description 321
- 239000000758 substrate Substances 0.000 title claims abstract description 134
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 126
- 239000010980 sapphire Substances 0.000 title claims abstract description 126
- 238000000034 method Methods 0.000 title claims abstract description 25
- 230000000087 stabilizing effect Effects 0.000 title claims abstract description 19
- 239000000243 solution Substances 0.000 claims abstract description 62
- 239000011259 mixed solution Substances 0.000 claims abstract description 49
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 29
- 239000010432 diamond Substances 0.000 claims abstract description 29
- 239000000843 powder Substances 0.000 claims abstract description 19
- 239000011550 stock solution Substances 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000012466 permeate Substances 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims description 53
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 19
- 239000000919 ceramic Substances 0.000 claims description 16
- 230000005540 biological transmission Effects 0.000 claims description 9
- 238000003825 pressing Methods 0.000 claims description 7
- 238000009833 condensation Methods 0.000 claims description 6
- 230000005494 condensation Effects 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 238000011068 loading method Methods 0.000 claims description 6
- 229920002635 polyurethane Polymers 0.000 claims description 5
- 239000004814 polyurethane Substances 0.000 claims description 5
- 235000015073 liquid stocks Nutrition 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 239000004745 nonwoven fabric Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 description 26
- 230000036571 hydration Effects 0.000 description 15
- 238000006703 hydration reaction Methods 0.000 description 15
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 230000009471 action Effects 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 6
- 239000003513 alkali Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 238000005299 abrasion Methods 0.000 description 4
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000002035 prolonged effect Effects 0.000 description 4
- 238000000227 grinding Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/04—Headstocks; Working-spindles; Features relating thereto
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a method and a device for stabilizing polishing removal rate of a sapphire substrate, which are characterized in that diamond micro powder, polishing solution stock solution and water are mixed according to a certain proportion to prepare polishing mixed solution, and the polishing mixed solution is dripped into a polishing pad of a polishing device through a polishing pipeline, so that the polishing mixed solution permeates a polishing surface of the sapphire substrate on the polishing pad.
Description
Technical Field
The invention belongs to the technology of LED chip polishing technology, and particularly relates to a method and a device for stabilizing polishing removal rate of a sapphire substrate.
Background
At present, the LED chip substrate material is mainly a sapphire substrate, the surface of the substrate must have extremely high flatness and cleanliness, and the most effective method is a CMP polishing technology, wherein the CMP polishing technology is a polishing mode combining two mechanical polishing modes and alkaline solution participating in chemical reaction, and can polish the surface of the sapphire substrate to high flatness and cleanliness. The common practice in industry is to put the substrate after wire cutting, grinding and annealing into a cleaning machine for cleaning, then paste the substrate on the surface of a flat circular ceramic disc by using a wax pasting machine, and then move the ceramic disc with the substrate on a polishing machine for polishing.
The CMP polishing must use polishing solution to polish, at present, the polishing solution of alumina is mainly used for polishing the sapphire substrate, the ratio of the polishing solution to water is generally 1:8-1:14, a certain amount of alkali solution is added during polishing operation, the PH of the polishing solution is kept to be more than 12, the removal rate of the polishing solution to the sapphire substrate can be gradually reduced along with the increase of the operation time, the removal rate can be reduced by more than 30% after the continuous operation is generally carried out for 15 hours, and the method for maintaining the removal rate of the polishing solution at present mainly comprises the following steps: 1. adding a certain amount of polishing solution stock solution into a sapphire substrate (timing) for each polishing batch; 2. adding a certain amount of polishing solution stock solution when the removal rate of the polishing solution is seriously reduced (generally, the service life of the polishing solution is 2/3); the polishing solution stock solution is added at fixed time and fixed quantity: although the method 1 can maintain the removal rate to a certain extent, the removal rate has larger fluctuation and more polishing liquid raw materials are consumed; the method 2 needs to add polishing liquid, if the polishing liquid is automatically added, specific requirements are met on a liquid supply system of polishing equipment, the manufacturing cost of the equipment is increased, if the polishing liquid is manually added at fixed time and fixed quantity, the labor cost is increased, and errors of the adding quantity and the operation time exist, so that the stability of the removal rate and the service life of the polishing liquid can not be effectively ensured.
In summary, all the existing methods have certain disadvantages, and a new technical scheme is needed to be perfected.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a method and a device for stabilizing the polishing removal rate of a sapphire substrate, so that the removal rate of polishing liquid in the polishing operation of the sapphire substrate is effectively stabilized, the fluctuation of the removal rate is ensured to be small, and the service life of the polishing liquid is effectively prolonged.
The invention is implemented by the following technical scheme: a method for stabilizing polishing removal rate of a sapphire substrate, comprising the steps of:
s1: mixing diamond micropowder, polishing solution stock solution and water according to the weight ratio of (1.8 g-2.2 g): (4115 g-4120 g): mixing at a ratio of 47000g to obtain a polishing mixed solution;
s2: adding the polishing mixed solution into a polishing pipeline, and dripping the polishing mixed solution into a polishing pad of a polishing device through the polishing pipeline to enable the polishing mixed solution to permeate into a polishing surface of a sapphire substrate on the polishing pad;
s3: and polishing the sapphire substrate for a plurality of times according to the interval operation until the surface flatness of the substrate reaches the standard.
Further, in step S1, the type of the polishing liquid stock solution is an alumina polishing liquid.
Further, the diamond fine powder in the step S1 has a particle diameter of 1.5 μm to 3.5. Mu.m.
Further, before the polishing mixture is added into the polishing pipeline in step S2, dropping liquid wax onto the surface of the sapphire substrate, loading the sapphire substrate into a centrifugal device, uniformly diffusing the liquid wax on the surface of the sapphire substrate in a rotating state through the centrifugal device, placing the sapphire substrate into an oven for drying, volatilizing the fluidity components of the liquid wax, obtaining a wax layer in a viscous state and uniformly diffusing on the surface of the sapphire substrate, attaching the wax layer on the surface of the sapphire substrate into the polishing device for condensation, and completing the adhesion and fixation of the sapphire substrate.
Further, the number of polishing operations in step S3 is 7 to 10.
Further, in step S3, the time of each operation of the intermediate operation is 120min to 140min.
The invention also provides a sapphire substrate stable polishing device, which comprises the polishing mixed liquid, wherein the polishing mixed liquid is arranged in a liquid supply pipeline, the liquid supply pipeline is arranged above a polishing chassis at intervals, the polishing chassis is in transmission connection with a main motor, a polishing pad is attached to the top surface of the polishing chassis, at least one polishing pressure head is arranged above the polishing pad, a ceramic disc is attached to the bottom surface of the polishing pressure head, a gap is reserved between the ceramic disc and the polishing pad, each polishing pressure head is in transmission connection with a driving motor, and all the polishing pressure heads are in transmission connection with a pressing execution piece.
Further, the main motor and the driving motor are servo motors.
Further, a sapphire substrate is adhered to the lower portion of the polishing press head through a wax layer.
Further, the type of the pressing-down executing piece is one of an electric cylinder and an air cylinder.
Further, a mounting frame is fixedly arranged between the output shaft of the pressing execution part and the driving motor, the mounting frame body extends downwards and is sleeved with a thrust bearing, and the bottom surface of the thrust bearing is attached to the top surface of the polishing press head.
Further, the polishing pad is made of non-woven fabrics or polyurethane.
The beneficial effects of the invention are as follows: according to the invention, the diamond micro powder and the polishing solution are configured according to a certain proportion, and the diamond micro powder has high hardness, does not react with alkali, does not form a surface hydration layer, is not easy to grind small in particle size in the polishing process, and can effectively replace worn alumina particles, so that the mechanical polishing efficiency in CMP polishing is ensured, the removal rate of the polishing solution in the polishing operation of the sapphire substrate is finally stabilized, the fluctuation of the removal rate is ensured to be small, and the operation life of the polishing solution is effectively prolonged.
Drawings
FIG. 1 is a process flow diagram of a method for stabilizing a polishing removal rate of a sapphire substrate according to an embodiment of the present invention;
FIG. 2 is a graph of removal rate versus data for a method for stabilizing polishing removal rate of a sapphire substrate according to an embodiment of the present invention;
FIG. 3 is a graph of comparative removal rate data for a method for stabilizing polishing removal rate of a sapphire substrate provided in accordance with a second embodiment of the present invention;
FIG. 4 is a schematic view showing a partial structure of a stable polishing apparatus for a sapphire substrate according to an embodiment of the present invention;
fig. 5 is a schematic view of a polishing track of a sapphire substrate stable polishing apparatus according to an embodiment of the present invention.
In the figure: 10-polishing bottom plate, 11-polishing pad, 12-main motor, 20-polishing pressure head, 21-ceramic disc, 22-driving motor, 23-thick wax layer, 24-mounting frame, 25-thrust bearing, 30-liquid supply pipeline, 40-sapphire substrate.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples of the specification.
It should be noted that, in the present invention, unless explicitly specified and limited otherwise, terms such as "mounted," "connected," "fixed," and the like are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Example 1
As shown in fig. 1, the present embodiment provides a method for stabilizing polishing removal rate of a sapphire substrate, including the steps of:
s1: diamond micropowder with the particle size of 2.5 mu m is selected, and the diamond micropowder, the alumina polishing solution stock solution and water are mixed according to the weight ratio of 2g:4118g:47000g of the raw materials are mixed to obtain polishing mixed solution, the polishing mixed solution is suitable for modification treatment of standard alumina polishing solution raw solution with the pH of 10.5-11.5, and diamond micro powder is used as a blocking medium for abrasion of an alumina component surface hydration layer in the polishing solution.
S2: dripping liquid wax on the surface of the sapphire substrate, loading the sapphire substrate into a centrifugal device, uniformly diffusing the liquid wax on the surface of the sapphire substrate in a rotating state through the centrifugal action of the centrifugal device and the flowability of the liquid wax, then putting the sapphire substrate into an oven for drying, volatilizing the flowability component (such as glycerol) of the liquid wax, obtaining a viscous and uniformly diffused wax layer on the surface of the sapphire substrate, attaching the wax layer on the surface of the sapphire substrate to a ceramic disc in a polishing device for condensation, and completing the adhesion and fixation of the sapphire substrate, wherein the firm adhesion and horizontal stable posture of the sapphire substrate are ensured in the uniformly diffused state of the wax layer;
adding the polishing mixed solution into a polishing pipeline, dripping the polishing mixed solution into a polishing pad in a polishing device through the polishing pipeline, and enabling the polishing mixed solution to permeate into a polishing surface of a sapphire substrate on the polishing pad, wherein preferably, the polishing mixed solution is enabled to be fully diffused along with the relative rotation of the polishing pad and the sapphire substrate, so that the polishing mixed solution acts on each polishing part of the sapphire substrate;
s3: the sapphire substrate is polished for 7 times according to the interval operation, the operation time is 120min each time until the surface flatness of the substrate reaches the standard, the removal rate data of each operation is recorded to obtain a removal rate comparison table shown in figure 2, the average removal rate of the polishing mixed solution (the curve shown by the removal rate of the diamond micro powder and the polishing solution in figure 2) after 7RUN operation is 12.44 mu m/h in the removal rate comparison data of the components of the sapphire substrate, the fluctuation of the removal rate of each polishing operation is small, and no obvious descending trend exists; the average removal rate of the conventional polishing solution (the curve shown by the removal rate of the polishing solution in fig. 2) after 7RUN operation is 12.28 μm/h, the removal rate of each polishing operation has larger fluctuation, and has obvious descending trend, and the removal rate of the conventional polishing solution is gradually smaller than that of the polishing mixed solution along with the increment of operation times, so that the polishing effect and the service life of the conventional polishing solution on the sapphire substrate are obviously inferior to those of the polishing mixed solution, and therefore, the polishing mixed solution prepared by modifying the diamond micro powder has obvious improvement on the polishing effect on the sapphire substrate.
The working principle of the embodiment is as follows:
the invention aims to stabilize the polishing removal rate of a sapphire substrate and prolong the service life of polishing liquid, and the reduction of the polishing liquid removal rate is mainly caused by the reduction of mechanical and chemical polishing efficiency in CMP (chemical mechanical polishing), and the reduction of the particle size of alumina particles which are the components of the polishing liquid is mainly caused by the reduction of the particle size of the alumina particles, so that the factors of the reduction of the particle size of the alumina particles are as follows: 1. the alumina particles participate in the polishing process, and the particle size is gradually reduced; 2. in the alkaline polishing solution, aluminum hydroxide hydration layers (cube lattices, weak chemical bonds and low hardness) are formed on the surfaces of aluminum hydroxide hydration layers (cube lattices, strong chemical bonds and high hardness) under alkaline conditions, and the surface hydration layers of the sapphire and the surface hydration layers of the polishing solution particles are continuously torn off, so that the aluminum oxide particles become smaller gradually; the invention adds a proper amount of diamond micro powder into the polishing solution, has high hardness, does not react with alkali, is not easy to grind in the polishing process, can effectively replace worn alumina particles, thereby ensuring the mechanical polishing efficiency in CMP polishing, finally stabilizing the removal rate of the polishing solution, ensuring small fluctuation of the removal rate and effectively prolonging the service life of the polishing solution.
As shown in fig. 4, this embodiment further provides a stable polishing device for a sapphire substrate, including any one of the above polishing mixed solution, where the polishing mixed solution is disposed in a solution supply pipe, the solution supply pipe is disposed above the polishing chassis at intervals, the polishing chassis is in transmission connection with the main motor, a polishing pad is attached to the top surface of the polishing chassis, at least one polishing press head is disposed above the polishing pad, a ceramic disc is attached to the bottom surface of the polishing press head, a gap is left between the ceramic disc and the polishing pad, each polishing press head is respectively in transmission connection with one driving motor, and all the polishing press heads are in transmission connection with a pressing-down executing member, so that when the sapphire substrate is adhered to the bottom surface of the ceramic disc, the polishing press head and the polishing chassis can be rotated simultaneously, and the sapphire substrate can obtain a polishing effect with complex shape and track and uniform action.
As shown in fig. 4, after a plurality of sapphire substrates are adhered to the bottom surface of the ceramic disc (preferably 7 sapphire substrates), the pressing-down executing members are driven to attach the sapphire substrates to the upper surface of the polishing pad, the main motor and the driving motor are started to respectively drive the polishing chassis and the polishing press head to rotate clockwise (the direction is shown in fig. 5), the polishing mixed liquid is synchronously dripped into the polishing pipeline, the polishing mixed liquid is centrifugally dispersed to the positions of the disc surface by the rotating state of the polishing chassis, and then the polishing mixed liquid acts on the surface of each piece of sapphire substrate by the relative rotating state of the polishing press head.
In this embodiment, the main motor and the driving motor are servo motors, so as to precisely regulate and control the rotation speed required by each stage of the polishing process.
In this embodiment, the sapphire substrate is adhered under the polishing press head through a wax layer, preferably the wax layer in the viscous state and uniformly diffused in this embodiment, so as to ensure firm adhesion and horizontal stable posture of the sapphire substrate in the uniformly diffused state of the wax layer.
In this embodiment, the type of the pressing-down executing member is one of an electric cylinder and an air cylinder, preferably an air cylinder, so that when the pressing-down executing member makes the sapphire substrate touch the polishing layer, the impact of the sapphire substrate caused by the impact is buffered by using the gas elasticity of the air cylinder, and the sapphire substrate is ensured not to be damaged by the impact.
In this embodiment, push down the executive component output shaft with fixed mounting bracket that is equipped with between the driving motor, the mounting bracket support body downwardly extending and the cover is equipped with thrust bearing, thrust bearing bottom surface attach in polishing pressure head top surface to this ensures to push down the executive component applied down the pressure through mounting bracket, thrust bearing, ceramic disc direct action on the sapphire substrate, avoids the driving motor output shaft to receive the destruction of axial pressure, and protection driving motor and relevant rotary mechanism are not damaged, further ensures polishing device's steady operation and polishing mixed solution's life.
In this embodiment, the polishing pad is made of non-woven fabric or polyurethane, preferably polyurethane, and the wear-resistant and impact-resistant properties of polyurethane are used to further ensure the service life of the polishing pad and the polishing mixture.
Example two
The difference between the present embodiment and the first embodiment is that the number of times of the intermittent operation of the sapphire substrate is increased, so that the durability of the polishing mixture is further exerted.
As shown in fig. 1, the present embodiment provides a method for stabilizing polishing removal rate of a sapphire substrate, including the steps of:
s1: diamond micropowder with the particle size of 2.5 mu m is selected, and the diamond micropowder, the alumina polishing solution stock solution and water are mixed according to the weight ratio of 2g:4118g:47000g of the raw materials are mixed to obtain polishing mixed solution, the polishing mixed solution is suitable for modification treatment of standard alumina polishing solution raw solution with the pH of 10.5-11.5, and diamond micro powder is used as a blocking medium for abrasion of an alumina component surface hydration layer in the polishing solution.
S2: dripping liquid wax on the surface of the sapphire substrate, loading the sapphire substrate into a centrifugal device, uniformly diffusing the liquid wax on the surface of the sapphire substrate in a rotating state through the centrifugal action of the centrifugal device and the flowability of the liquid wax, then putting the sapphire substrate into an oven for drying, volatilizing the flowability component (such as glycerol) of the liquid wax, obtaining a viscous and uniformly diffused wax layer on the surface of the sapphire substrate, attaching the wax layer on the surface of the sapphire substrate to a ceramic disc in a polishing device for condensation, and completing the adhesion and fixation of the sapphire substrate, wherein the firm adhesion and horizontal stable posture of the sapphire substrate are ensured in the uniformly diffused state of the wax layer;
adding the polishing mixed solution into a polishing pipeline, dripping the polishing mixed solution into a polishing pad in a polishing device through the polishing pipeline, and enabling the polishing mixed solution to permeate into a polishing surface of a sapphire substrate on the polishing pad, wherein preferably, the polishing mixed solution is enabled to be fully diffused along with the relative rotation of the polishing pad and the sapphire substrate, so that the polishing mixed solution acts on each polishing part of the sapphire substrate;
s3: polishing the sapphire substrate for 10 times according to the interval operation, wherein the operation time is 140min each time until the surface flatness of the substrate reaches the standard, recording the removal rate data of each operation to obtain a removal rate comparison table shown in figure 3, and aiming at the removal rate comparison data of the components of the sapphire substrate, the average removal rate of a polishing mixed solution (a curve shown by the removal rate of diamond micro powder and polishing solution in figure 3) after 10RUN operation is 11.14 mu m/h, wherein the fluctuation of the removal rate of each polishing operation is small, and no obvious descending trend exists; the conventional polishing solution (the curve shown by the removal rate of the polishing solution in fig. 3) does not meet the use standard (9.6 μm/h) after 7RUN, and the previous 7 RUNs have a significant decrease trend, so that in the repeated polishing operation of high times, the polishing effect and the service life of the conventional polishing solution on the sapphire substrate are obviously inferior to those of the polishing mixed solution, and the polishing effect of the polishing mixed solution prepared by modifying the diamond micro powder on the sapphire substrate is significantly improved.
Example III
The difference between the embodiment and the first embodiment is that the PH value of the polishing liquid stock solution is changed, and the use effect of the polishing mixed solution is ensured by different proportions.
As shown in fig. 1, the present embodiment provides a method for stabilizing polishing removal rate of a sapphire substrate, including the steps of:
s1: diamond micropowder with the particle size of 3.5 mu m is selected, and 2.2g of diamond micropowder, alumina polishing solution stock solution and water are mixed: 4115g: the 47000g of the polishing mixture is mixed to obtain the polishing mixture, the polishing mixture is suitable for the modification treatment of the aluminum oxide polishing solution stock solution with the PH of more than 11.5 (the polishing solution stock solution at the moment is mainly based on the chemical polishing effect), the diamond micro powder with the increased component proportion is used as a blocking medium for the abrasion of the hydration layer on the surface of the aluminum oxide component in the polishing solution, and the polishing solution component is fully and uniformly mixed by the diamond micro powder to finish the modification.
S2: dripping liquid wax on the surface of the sapphire substrate, loading the sapphire substrate into a centrifugal device, uniformly diffusing the liquid wax on the surface of the sapphire substrate in a rotating state through the centrifugal action of the centrifugal device and the flowability of the liquid wax, then putting the sapphire substrate into an oven for drying, volatilizing the flowability component (such as glycerol) of the liquid wax, obtaining a viscous and uniformly diffused wax layer on the surface of the sapphire substrate, attaching the wax layer on the surface of the sapphire substrate to a ceramic disc in a polishing device for condensation, and completing the adhesion and fixation of the sapphire substrate, wherein the firm adhesion and horizontal stable posture of the sapphire substrate are ensured in the uniformly diffused state of the wax layer;
adding the polishing mixed solution into a polishing pipeline, dripping the polishing mixed solution into a polishing pad in a polishing device through the polishing pipeline, and enabling the polishing mixed solution to permeate into a polishing surface of a sapphire substrate on the polishing pad, wherein preferably, the polishing mixed solution is enabled to be fully diffused along with the relative rotation of the polishing pad and the sapphire substrate, so that the polishing mixed solution acts on each polishing part of the sapphire substrate;
s3: the sapphire substrate is polished for 7 times according to the interval operation, and the operation time is 120min each time until the surface flatness of the substrate reaches the standard. In the alkaline polishing solution, aluminum oxide (regular hexagonal lattice, strong chemical bond and high hardness) forms an aluminum hydroxide hydration layer (regular hexagonal lattice, weak chemical bond and low hardness) on the surface under alkaline conditions, so that the sapphire surface hydration layer and the surface hydration layer of the polishing solution particles can be continuously torn off, and the aluminum oxide particles become smaller gradually; in the embodiment, a proper amount of diamond micro powder is added into the polishing solution to serve as a blocking medium of a polishing space, so that gap space for polishing and grinding is limited from being continuously compressed, the diamond micro powder has high hardness and does not react with alkali, the particle size is not easy to grind in the polishing process, worn alumina particles can be effectively replaced, the mechanical polishing efficiency in CMP polishing is ensured, the removal rate of the polishing solution is finally stabilized, the fluctuation of the removal rate is ensured to be small, and the operation life of the polishing solution is effectively prolonged.
Example IV
The difference between the embodiment and the first embodiment is that the PH value of the polishing liquid stock solution is changed, and the use effect of the polishing mixed solution is ensured by different proportions.
As shown in fig. 1, the present embodiment provides a method for stabilizing polishing removal rate of a sapphire substrate, including the steps of:
s1: diamond micropowder with the particle size of 1.5 mu m is selected, and the diamond micropowder, the alumina polishing solution stock solution and water are mixed according to the weight ratio of 1.8g:4120g: the 47000g is mixed to obtain polishing mixed solution, the polishing mixed solution is suitable for the modification treatment of the aluminum oxide polishing solution stock solution with the PH less than 10.5 (the polishing solution stock solution at the moment mainly takes the mechanical polishing effect), the diamond micro powder with the reduced component proportion is used as a blocking medium for the abrasion of the hydration layer on the surface of the aluminum oxide component in the polishing solution, and the full play of the polishing solution component is ensured.
S2: dripping liquid wax on the surface of the sapphire substrate, loading the sapphire substrate into a centrifugal device, uniformly diffusing the liquid wax on the surface of the sapphire substrate in a rotating state through the centrifugal action of the centrifugal device and the flowability of the liquid wax, then putting the sapphire substrate into an oven for drying, volatilizing the flowability component (such as glycerol) of the liquid wax, obtaining a viscous and uniformly diffused wax layer on the surface of the sapphire substrate, attaching the wax layer on the surface of the sapphire substrate to a ceramic disc in a polishing device for condensation, and completing the adhesion and fixation of the sapphire substrate, wherein the firm adhesion and horizontal stable posture of the sapphire substrate are ensured in the uniformly diffused state of the wax layer;
adding the polishing mixed solution into a polishing pipeline, dripping the polishing mixed solution into a polishing pad in a polishing device through the polishing pipeline, and enabling the polishing mixed solution to permeate into a polishing surface of a sapphire substrate on the polishing pad, wherein preferably, the polishing mixed solution is enabled to be fully diffused along with the relative rotation of the polishing pad and the sapphire substrate, so that the polishing mixed solution acts on each polishing part of the sapphire substrate;
s3: the sapphire substrate is polished for 7 times according to the interval operation, and the operation time is 120min each time until the surface flatness of the substrate reaches the standard. In the alkaline polishing solution, aluminum oxide (regular hexagonal lattice, strong chemical bond and high hardness) forms an aluminum hydroxide hydration layer (regular hexagonal lattice, weak chemical bond and low hardness) on the surface under alkaline conditions, so that the sapphire surface hydration layer and the surface hydration layer of the polishing solution particles can be continuously torn off, and the aluminum oxide particles become smaller gradually; in the embodiment, a proper amount of diamond micro powder is added into the polishing solution to serve as a blocking medium of a polishing space, so that gap space for polishing and grinding is limited from being continuously compressed, the diamond micro powder has high hardness and does not react with alkali, the particle size is not easy to grind in the polishing process, worn alumina particles can be effectively replaced, the mechanical polishing efficiency in CMP polishing is ensured, the removal rate of the polishing solution is finally stabilized, the fluctuation of the removal rate is ensured to be small, and the operation life of the polishing solution is effectively prolonged.
The foregoing description of the preferred embodiment of the invention is not intended to limit the invention in any way, but it should be understood that the embodiment can be modified, altered and substituted in other equivalent ways within the scope of the invention as defined in the claims, which are all within the scope of the invention as defined in the claims.
Claims (9)
1. A method for stabilizing polishing removal rate of a sapphire substrate is characterized by comprising the following steps: the method comprises the following steps:
s1: mixing diamond micropowder, polishing solution stock solution and water according to the weight ratio of (1.8 g-2.2 g): (4115 g-4120 g): mixing at a ratio of 47000g to obtain a polishing mixed solution;
s2: dripping liquid wax on the surface of the sapphire substrate, loading the sapphire substrate into a centrifugal device, uniformly diffusing the liquid wax on the surface of the sapphire substrate in a rotating state through the centrifugal device, putting the sapphire substrate into an oven for drying, volatilizing the liquidity components of the liquid wax, obtaining a thick and uniformly diffused wax layer on the surface of the sapphire substrate, attaching the wax layer on the surface of the sapphire substrate into a polishing device for condensation, and completing the adhesion and fixation of the sapphire substrate;
adding the polishing mixed solution into a polishing pipeline, and dripping the polishing mixed solution into a polishing pad of a polishing device through the polishing pipeline to enable the polishing mixed solution to permeate into a polishing surface of a sapphire substrate on the polishing pad;
s3: and polishing the sapphire substrate for a plurality of times according to the interval operation until the surface flatness of the substrate reaches the standard.
2. The method for stabilizing a polishing removal rate and extending a lifetime of a polishing liquid for a sapphire substrate according to claim 1, wherein: the type of the polishing liquid stock solution in the step S1 is alumina polishing liquid.
3. The method for stabilizing a polishing removal rate and extending a lifetime of a polishing liquid for a sapphire substrate according to claim 1, wherein: the grain diameter of the diamond micro powder in the step S1 is 1.5-3.5 mu m.
4. The method for stabilizing a polishing removal rate and extending a lifetime of a polishing liquid for a sapphire substrate according to claim 1, wherein: the polishing times of the intermediate operation in the step S3 are 7 to 10 times.
5. The method for stabilizing a polishing removal rate and extending a lifetime of a polishing liquid for a sapphire substrate according to claim 1, wherein: and in the step S3, the time of each operation of the intermediate operation is 120-140 min.
6. The utility model provides a sapphire substrate stable burnishing device which characterized in that: the polishing device comprises a liquid supply pipeline, wherein a polishing mixed liquid is arranged in the liquid supply pipeline, the polishing mixed liquid is the polishing mixed liquid according to any one of claims 1-5, the liquid supply pipeline is arranged above a polishing chassis at intervals, the polishing chassis is in transmission connection with a main motor, a polishing pad is attached to the top surface of the polishing chassis, at least one polishing press head is arranged above the polishing pad, a ceramic disc is attached to the bottom surface of the polishing press head, a gap is reserved between the ceramic disc and the polishing pad, each polishing press head is in transmission connection with a driving motor, and all the polishing press heads are in transmission connection with a pressing execution piece.
7. The sapphire substrate stable polishing apparatus of claim 6 wherein: the main motor and the driving motor are all servo motors, the pressing execution piece is one of an electric cylinder and an air cylinder, and the polishing pad is made of non-woven fabrics or polyurethane.
8. The sapphire substrate stable polishing apparatus of claim 6 wherein: and a sapphire substrate is adhered below the polishing pressure head through a wax layer.
9. The sapphire substrate stable polishing apparatus of claim 6 wherein: the polishing press head comprises a pressing executing piece, a driving motor, a pressing executing piece output shaft, a pressing executing piece, a driving motor, a mounting frame and a mounting frame body.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211540641.7A CN116079504A (en) | 2022-12-02 | 2022-12-02 | Method and device for stabilizing polishing removal rate of sapphire substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211540641.7A CN116079504A (en) | 2022-12-02 | 2022-12-02 | Method and device for stabilizing polishing removal rate of sapphire substrate |
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| CN116079504A true CN116079504A (en) | 2023-05-09 |
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| CN202211540641.7A Pending CN116079504A (en) | 2022-12-02 | 2022-12-02 | Method and device for stabilizing polishing removal rate of sapphire substrate |
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| Country | Link |
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| CN (1) | CN116079504A (en) |
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