CN116078242A

CN116078242A - Fluid processing apparatus, fluid processing method, and semiconductor processing system

Info

Publication number: CN116078242A
Application number: CN202111315885.0A
Authority: CN
Inventors: 温子瑛
Original assignee: Wuxi Huaying Microelectronics Technology Co Ltd
Current assignee: Wuxi Huaying Microelectronics Technology Co Ltd
Priority date: 2021-11-08
Filing date: 2021-11-08
Publication date: 2023-05-09

Abstract

The invention provides a fluid processing apparatus, a method and a semiconductor processing system. The fluid treatment device includes: at least two rotary valves, each comprising a common through-hole and a plurality of selectable through-holes, one of the plurality of selectable through-holes of each rotary valve being in communication with the gas port via a line and/or one of the selectable through-holes being in communication with the sample inlet via a line and/or one of the selectable through-holes being in communication with the wash solution port via a line, wherein one of the selectable through-holes of one rotary valve being in communication with the sample outlet via a line; the fluid container is characterized in that a cavity is formed in the fluid container, a plurality of through holes are formed in the top of the fluid container, one or more through holes are formed in the bottom of the fluid container, one through hole in the top is communicated with the common through hole of one rotary valve through a pipeline, and one through hole in the bottom is communicated with the common through hole of the other rotary valve through a pipeline. Which can automatically achieve accurate and sufficient mixing of different liquid samples and is easy to clean.

Description

Fluid processing apparatus, fluid processing method, and semiconductor processing system

[ field of technology ]

The present invention relates to the field of fluid processing, and in particular to a fluid processing apparatus, a fluid processing method, and a semiconductor processing system.

[ background Art ]

In the integrated circuit chip manufacturing process, almost every procedure may pollute the wafer surface, affect the performance and service life of devices, and even discard most devices on the whole wafer, resulting in low yield. Therefore, in the chip manufacturing process with a complex structure, especially in the chip manufacturing process of high-end scribing lines, the monitoring and control of the pollution on the wafer surface are important links for ensuring the production yield and the chip quality.

In the semiconductor manufacturing industry, there are a variety of wafer surface contamination detection techniques that can be divided into two broad categories, physical and chemical. The physical method mainly utilizes the photoelectric principle to detect the pollution of the surface of the wafer, such as total reflection X-ray fluorescence (TXRF) analysis technology, surface Photovoltage (SPV), scanning Electron Microscope (SEM), secondary Ion Mass Spectrometer (SIMS) and the like. The chemical method mainly adopts a trace amount of chemical mixed solution to scan the surface of a wafer, and the chemical mixed solution reacts with pollutants on the surface of the wafer chemically and physically to dissolve the pollutants and collect the pollutants into the solution. And (3) qualitatively and quantitatively measuring the concentration of the pollution elements or ions or molecules collected in the solution by using a proper measuring instrument. Can be converted into the atomic number, the ion number or the molecular number of certain pollutant in the unit area of the wafer.

During the fabrication of high-end chips, very trace amounts of contamination, especially metal contamination, can lead to reduced yield and chip quality. Pollution monitoring is an important link for ensuring the production yield of chips and the performance quality of chips. The cleanliness of each step of each link determines the detection limit and accuracy of the detection method in the whole detection process of pollution monitoring, including sampling and measurement. The sampling and measuring steps are simplified as much as possible, the possible pollution sources are reduced, and the full-automatic online sampling, measuring and data analysis is realized, so that the detection capacity and quality can be ensured and improved. Thus, there is a need for a fluid handling device that is capable of collecting extraction solution from contaminant extraction equipment, such as dynamic thin layer wafer surface contamination sampling equipment, and then delivering the extraction solution to a measurement instrument, such as an inductively coupled plasma mass spectrometer. The device can also accurately collect trace amounts of various chemical solutions, and the chemical solutions are automatically mixed and then sent to sampling equipment or a measuring instrument; and the cleaning can be automatically performed to ensure the ultra-clean of the whole process.

[ invention ]

It is an object of the present invention to provide a fluid processing device and a fluid processing method which can automatically achieve accurate and sufficient mixing of different liquid samples and which are easy to clean.

It is a second object of the present invention to provide a semiconductor processing system that is capable of automatically achieving accurate collection and thorough mixing of different liquid samples, and has an automatic cleaning function, ensuring an ultra clean state of the entire fluid route.

To achieve the above object, according to a first aspect of the present invention, there is provided a fluid treatment device comprising: a pipeline; at least two rotary valves, each rotary valve comprising a common through-hole and a plurality of selectable through-holes, the common through-hole being capable of communicating with one of the plurality of selectable through-holes via an internal passageway by rotating the rotary valve, one of the plurality of selectable through-holes of each rotary valve being in communication with the gas port via a line to receive the gas and/or one of the selectable through-holes being in communication with the sample inlet via a line to receive the liquid sample and/or one of the selectable through-holes being in communication with the wash solution port via a line to receive the wash solution, wherein one of the selectable through-holes of one rotary valve is in communication with the sample outlet via a line to drain the liquid sample; the fluid container is characterized in that a cavity is formed in the fluid container, a plurality of through holes communicated with the cavity are formed in the top of the fluid container, one or more through holes communicated with the cavity are formed in the bottom of the fluid container, one through hole in the top is communicated with the common through hole of one rotary valve through a pipeline, and one through hole in the bottom is communicated with the common through hole of the other rotary valve through a pipeline.

According to another aspect of the present invention, there is provided a fluid treatment method of a fluid treatment device, comprising: introducing a liquid sample into a cavity of the fluid container, the process comprising: rotating a rotary valve to an optional through hole in communication with the sample introduction port; the sample introduction port introduces the liquid sample into the cavity of the fluid container through the pipeline and the rotary valve, and if bubbles exist in the liquid sample, the bubbles are discharged through a through hole at the top of the fluid container, which is communicated with the first waste outlet; after the reception of such liquid sample is completed, the rotary valve is rotated to an optional through hole communicating with the gas port, and the liquid sample in the line between the rotary valve and the fluid container is entirely fed into the cavity of the fluid container by the gas.

According to yet another aspect of the present invention, there is provided a semiconductor processing system comprising: the semiconductor processing device includes: a first chamber portion; a second chamber portion movable between an open position and a closed position with respect to the first chamber portion, wherein a micro chamber is formed between the first chamber portion and the second chamber portion when the second chamber portion is located at the closed position with respect to the first chamber portion, wherein a semiconductor wafer can be accommodated in the micro chamber, and wherein the semiconductor wafer can be taken out or put in when the second chamber portion is located at the open position with respect to the first chamber portion; wherein the first chamber portion has a first channel formed at an inner wall surface of the first chamber portion facing the micro chamber, the second chamber portion has a second channel formed at an inner wall surface of the second chamber portion facing the micro chamber, and when the second chamber portion is located at the closed position with respect to the first chamber portion and the semiconductor wafer is accommodated in the micro chamber, the first channel and the second channel communicate and jointly form an edge micro-processing space into which an outer edge of the semiconductor wafer accommodated in the micro chamber protrudes, the edge micro-processing space communicating with the outside through an edge processing through hole through which a fluid enters or exits; the fluid required by the process is accurately prepared according to the process formula by the fluid treatment device, and the fluid is sent into the micro-treatment space from the edge treatment through hole; the fluid from the micro-processing space can also be collected by the fluid processing device described above, connected to the edge processing through holes.

Compared with the prior art, the invention can automatically realize the accurate collection and full mixing of micro-quantity different liquid samples through the fluid container and at least two rotary valves, and the collected and mixed liquid is transferred to a measuring instrument or an automatic sample collector, and is easy to clean. All surfaces in contact with the fluid may be made of a pure and corrosion-resistant polytetrafluoroethylene material to ensure an ultra-clean state of the fluid treatment device.

[ description of the drawings ]

The invention will be more readily understood by reference to the following detailed description in conjunction with the accompanying drawings, wherein like reference numerals designate like structural elements, and in which:

FIG. 1a is a schematic diagram of a semiconductor wafer;

FIG. 1b is a cross-sectional E-E view of FIG. 1 a;

fig. 1c is a cross-sectional view of an outer edge portion of a semiconductor wafer prior to outer edge processing;

FIG. 1d is a cross-sectional view of the outer edge portion of a semiconductor wafer after outer edge processing;

FIG. 2a is a schematic cross-sectional view of a semiconductor processing apparatus of the present invention in a first embodiment;

FIG. 2b is an enlarged schematic view of circle A in FIG. 2 a;

FIG. 3a is a bottom view of a first chamber portion of the semiconductor processing apparatus of FIG. 2 a;

FIG. 3b is a top view of a second chamber portion of the semiconductor processing apparatus of FIG. 2 a;

FIG. 4a is a schematic cross-sectional view of a semiconductor processing apparatus of the present invention in a second embodiment;

FIG. 4B is an enlarged schematic view of circle B in FIG. 4 a;

FIG. 5a is a bottom view of the first chamber portion of the semiconductor processing apparatus of FIG. 4 a;

FIG. 5b is a top view of a second chamber portion of the semiconductor processing apparatus of FIG. 4 a;

FIG. 6 is a schematic diagram of a fluid processing apparatus according to one embodiment of the present invention;

FIGS. 7a and 7b are schematic illustrations of the structure of a fluid container of the present invention in one embodiment;

FIGS. 8a and 8b show schematic structural views of a fluid container according to the present invention in another embodiment; and

fig. 8c shows a schematic view of a cup blank for forming the fluid container shown in fig. 8a and 8 b.

[ detailed description ] of the invention

In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.

Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one implementation of the invention. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. The terms "plurality" and "a plurality" as used herein mean two or more. "and/or" in the present invention means "and" or ".

First embodiment:

the precise edge etching process of semiconductor wafers is a challenging process. It is required to achieve accurate corrosion of the wafer edge micron level without damaging or contaminating the film of the remaining portion. In epitaxial wafer processing and advanced integrated circuit processing, wafer edge etching is an important step for ensuring film formation quality and improving chip yield. In addition, the precise edge contamination extraction process of semiconductor wafers is a challenging process. The method adopts a trace amount of chemical mixed solution to precisely scan the edge of a wafer, and dissolves and extracts pollutants on the edge into an extraction solution. Then measuring the concentration of the pollutant in the extracting solution by using a detecting instrument, and calculating the atomic number, or ion number or molecular number of the pollutant in the unit area of the wafer edge according to a formula.

Please refer to fig. 1a to 1d, wherein: FIG. 1a shows a schematic structure of a semiconductor wafer 400, and FIG. 1b is a cross-sectional E-E view of FIG. 1 a; FIG. 1c is a partial cross-sectional view of the outer edge of a semiconductor wafer prior to outer edge processing; fig. 1d is a cross-sectional view of the outer edge portion of the semiconductor wafer after outer edge processing. As shown in fig. 1a to 1d, the semiconductor wafer 400 includes a substrate layer 401 and a thin film layer 402 formed on a first side surface and a second side surface of the substrate layer 401. After the targeted etching treatment of the outer edge portion of the semiconductor wafer 400, the thin film layer 402 of the outer edge portion of the semiconductor wafer 400 is removed, and the first side surface and the second side surface of the substrate layer 401 are exposed.

Referring to fig. 2a to 3b, a schematic structural diagram of a semiconductor processing apparatus 100 according to a first embodiment of the present invention is shown, wherein: FIG. 2a is a schematic cross-sectional view of a semiconductor processing apparatus of the present invention in a first embodiment; FIG. 2b is an enlarged schematic view of circle A in FIG. 2 a; FIG. 3a is a bottom view of a first chamber portion of the semiconductor processing apparatus of FIG. 2 a; fig. 3b is a top view of the second chamber portion of the semiconductor processing apparatus of fig. 2 a.

Referring to fig. 2a to 3b, the semiconductor processing apparatus 100 includes a first chamber portion 110 and a second chamber portion 120. The first chamber portion 110 includes a first chamber plate 119 and a flange 118 extending from a periphery of the first chamber plate 119. The second chamber portion 120 includes a second chamber plate 129 and a flange 128 extending around the periphery of the second chamber plate 129.

The first chamber portion 110 is movable relative to the second chamber portion 120 between an open position and a closed position. With the first chamber portion 110 in a closed position relative to the second chamber portion 120, the flange 118 cooperates with the flange 128 to form a micro chamber 140 between the first chamber plate 118 and the second chamber plate 128, and a semiconductor wafer 400 to be processed can be accommodated within the micro chamber 140 awaiting subsequent processing. The flange 118 is separated from the flange 128 when the first chamber portion 110 is in an open position relative to the second chamber portion 120, and the semiconductor wafer 400 to be processed can be removed from or placed into the micro-chamber 140.

An annular first channel 116 is formed on the side of the first chamber portion 110 facing the micro chamber 140, and a second channel 126 is formed on the side of the second chamber portion 120 facing the micro chamber 140. When the second chamber portion 120 is in the closed position relative to the first chamber portion 110 and the semiconductor wafer 400 is received in the micro-chamber, the first channel 116 and the second channel 126 together form an edge micro-processing space 130, and an outer edge of the semiconductor wafer 400 received in the micro-chamber protrudes into the edge micro-processing space 130.

As shown in fig. 2a to 3b, in this embodiment, the first channel 116 and the second channel 126 are annular channels. When the second chamber portion 120 is located at the closed position relative to the first chamber portion 110 and the semiconductor wafer 400 is accommodated in the micro-chamber, the wall surface 117 of the first chamber portion 110 located at the inner side of the first channel 116 abuts against the first side surface of the semiconductor wafer 400 to be processed, the wall surface 127 of the second chamber portion 120 located at the inner side of the second channel 126 abuts against the second side surface of the semiconductor wafer 400 to be processed, the first channel 116 and the second channel 126 are surrounded to form a closed, annular outer edge micro-processing space 130, and the outer edge of the semiconductor wafer 400 to be processed can extend outwards into the outer edge micro-processing space 130.

Therefore, in the present embodiment, the edge micro-processing space 130 can implement targeted processing on the entire outer edge portion of the semiconductor wafer 400 to be processed.

Of course, the first channel 116 and the second channel 126 may be configured as arc-shaped channels having an arc less than 360 degrees. At this time, the first channel 116 and the second channel 126 form the closed outer edge micro-processing space 130 having an arc shape with an arc less than 360 degrees. Accordingly, a portion of the arc segment of the outer edge of the semiconductor wafer 400 to be processed extends outwardly into the edge micro-processing space 130. Thus, the edge micro-processing space 130 now enables targeted processing of only a portion of the arc segment of the outer edge of the semiconductor wafer 400 to be processed.

The first chamber part 110 has at least two edge processing through holes 112 penetrating the first chamber part 110 from the outside to communicate with the edge micro-processing space 130, wherein: at least one edge-treated through-hole serves as a fluid inlet and at least one edge-treated through-hole serves as a fluid outlet. In this embodiment, 4 edge processing through holes are provided. Of course, an edge processing through hole communicating with the edge micro-processing space 130 may be provided in the second chamber 120.

In use, the processing fluid can enter the edge micro-processing space 130 through one edge processing through hole 112, the fluid entering the edge micro-processing space 130 can flow in the edge micro-processing space 130, at this time, the processing fluid can contact and process the outer edge of the semiconductor wafer 400 to be processed, the fluid processed by the semiconductor wafer 400 to be processed can flow out through another edge processing through hole 112, or flow out through an edge processing through hole provided on the second chamber portion 120 and communicated with the edge micro-processing space 130. During processing, processing fluid can be introduced into the edge micro-processing space 130 through an edge processing through-hole 112 continuously or at intervals, and the fluid in the edge micro-processing space 130 can flow during processing, so that the processing speed can be increased.

Of course, the treatment may be etching treatment of the outer edge of the semiconductor wafer 400 to remove the thin film layer of the outer edge portion of the semiconductor wafer 400, targeted cleaning of only the outer edge of the semiconductor wafer 400, or the like. In addition, the processing may be that the processing fluid (such as an extraction solution) dissolves and collects the contaminants on the outer edge of the semiconductor wafer 400 to be processed into the extraction solution, then the concentration of the contaminants in the extraction solution is measured by a detecting instrument, and then the atomic number, or the ion number, or the molecular number of the contaminants contained in the unit area of the wafer edge is calculated according to a formula.

Taking as an example the etching removal of the thin film layer at the outer edge portion of the semiconductor wafer 400 to be processed. Referring to fig. 1a to 1d and 2a to 3b in combination, when it is required to etch away the thin film layers of the first and second sides of the outer edge of the semiconductor wafer 400 to be processed. Only the corresponding processing fluid having an etching effect on the thin film layer is introduced into the edge micro-processing space 130 through one edge processing through hole 112, and the processing fluid flows in the edge micro-processing space 130 and directly contacts the first side surface and the second side surface of the outer edge of the semiconductor wafer 400 to be processed. The processing fluid etches inward in a direction perpendicular to the first and second sides of the semiconductor wafer 400 such that the thin film layers 402 on the first and second side surfaces of the outer edge of the semiconductor wafer 400 are continuously etched away. After the process is completed, as shown in fig. 1d, the thin film layer 402 on the first side surface and the second side surface of the outer edge of the semiconductor wafer 400 is etched away, and the first side surface and the second side surface of the substrate layer 401 on the outer edge of the semiconductor wafer 400 are exposed. The fluid processed by the semiconductor wafer 400 is flowed out through other edge processing vias.

It can be seen that, based on the edge micro-processing space 130, the semiconductor processing apparatus 100 in this embodiment consumes only a small amount of processing fluid to achieve targeted etching treatment on the outer edge of one piece of the semiconductor wafer 400 to be processed, which greatly reduces the processing cost. In addition, the semiconductor processing apparatus 100 in the present embodiment has the remarkable advantages of simple structure, convenient use, and low requirement on the operation skills of operators, as compared with the dry process apparatus in the related art.

It can be seen that the semiconductor processing apparatus 100 provided in this embodiment can implement targeted processing on the outer edge of the semiconductor wafer 400 to be processed. In addition, by controlling the flow rate of the processing fluid within the semiconductor wafer 400 to be processed, the amount of processing fluid used may be saved. With continued reference to fig. 2 a-2 b, in the present embodiment, the first chamber portion 110 further has a first recess 115 formed on an inner wall surface of the first chamber portion 110 facing the micro chamber, the first recess being located inside the first channel 116, and the second chamber portion 120 further has a second recess 125 formed on an inner wall surface of the second chamber portion 120 facing the micro chamber, the second recess being located inside the second channel 126. The first recess 115 and the second recess 125 are also annular. When the second chamber portion 120 is located at the closed position relative to the first chamber portion 110 and the semiconductor wafer 400 to be processed is accommodated in the micro-chamber, a partial area of the second side surface of the semiconductor wafer 400 to be processed covers the top of the second recess 125 to form a second inner micro-space, a partial area of the first side surface of the semiconductor wafer 400 to be processed covers the top of the first recess 115 to form a first inner micro-space, and the first inner micro-space and the second inner micro-space are located inside the edge micro-processing space 130.

Correspondingly, the first chamber portion 110 has a first inner processing through hole communicating with the first recess portion 115, and the second chamber portion 120 has a second inner processing through hole communicating with the second recess portion 125. When the edge of the semiconductor wafer 400 is etched using the edge micro-process space 130, a liquid or gas, such as water or nitrogen, may be introduced into the first recess 115 and the second recess 125, that is, into the first inner micro-space and the second inner micro-space, to prevent the liquid in the edge micro-process space 130 from penetrating inward.

Likewise, the first recess 115 and the second recess 125 may be arc-shaped.

With continued reference to fig. 2a to 2b, in the present embodiment, when the second chamber portion 120 and the first chamber portion 110 are in the closed position, the micro chamber 140 is further formed in the middle thereof, the second chamber portion 120 has a middle processing through hole 123 communicating with the micro chamber 140, and the first chamber portion 110 has a middle processing through hole 113 communicating with the micro chamber 140.

Referring to fig. 2b, the first chamber portion 110 has a sealing engagement portion 210 thereon located outside the first channel 116, and the second chamber portion 120 has an engagement groove 122 thereon corresponding to the sealing engagement portion 210. The sealing joint 210 includes a guide surface 211 at the distal end and an inner side surface 212 at the inner side. When the second chamber portion 120 is located at the closed position with respect to the first chamber portion 110, the tip end of the seal engaging portion 210 protrudes into the engaging groove 122, the tip end portion of the inner side surface 212 thereof is in seal engagement with the groove wall of the engaging groove 122, and the upper end portion of the inner side surface 212 thereof forms the outer side surface of the outer-edge micro-processing space 130. This may further reduce the space of the outer edge micro-processing space 130. Further, the sealing surface of the distal end portion of the inner side surface 212 of the seal joint 210 and the groove wall of the joint groove 122 is located below the outer edge micro-processing space 130 and perpendicular to the extending direction of the semiconductor wafer 400, the arrangement may be such that the wall surface 117 of the first chamber portion 110 located inside the first groove 116 abuts against the first side surface of the semiconductor wafer 400 to be processed more tightly, and the wall surface 127 of the second chamber portion 120 located inside the second groove 126 abuts against the second side surface of the semiconductor wafer 400 to be processed more tightly, preventing the etching liquid from penetrating inward.

In the embodiment of fig. 2b, the inner side surface 212 of the sealing joint 210 may effect centering of the semiconductor wafer 140 during closing of the second chamber part 120 with respect to the first chamber part 110, i.e. if the center of the semiconductor wafer 140 when placed deviates from the desired center, the inner side surface 212 of the sealing joint 210 may also be corrected to the desired center by pressing against the semiconductor wafer 140. In one example, where it is desired that the center deviation of the semiconductor wafer 140 does not exceed 0.2mm when edge processing is performed, the center deviation can be adjusted to within 0.1mm in this manner of the present invention. The guide surface 211 may guide the sealing engagement portion 210 into the engagement groove 122 when the first and

second chamber portions

110 and 120 are closed. The sealing engagement portion 210 may be caught in the engagement groove 122.

Referring to fig. 2a, the first chamber portion 110 includes a positioning groove 114 and the second chamber portion 120 includes a positioning post 124, so that the first chamber portion 110 and the second chamber portion 120 can be properly positioned when closed. During the closing process of the first chamber portion 110 and the second chamber portion 120, the positioning post 124 is first engaged with the positioning groove 114 to achieve the initial positioning, and then the end of the sealing engagement portion 210 protrudes into the engagement groove 122.

In one embodiment, the silicon oxide wafer edge etching process performed using the semiconductor processing apparatus 100 of the present invention may include closing the chamber, HF acid etching, DIW rinsing, IPA rinsing, and nitrogen blow drying, and then opening the chamber to remove the wafer. The specific processes in which the HF acid etch, DIW (deionized water) rinse, and IPA (isopropyl alcohol) rinse are all operated with reference to the above-described procedure. In particular, during the HF acid etching, a liquid or gas, such as water or nitrogen, may be introduced into the first recess 115 and the second recess 125 to prevent the liquid in the edge micro-process space 130 from penetrating inward.

As described above, the semiconductor processing apparatus 100 of the present invention may be used to extract and detect the contaminants on the outer edge of the semiconductor wafer 400 to be processed, and various single or mixed liquids may be used to react with the contaminants on the edge of the wafer, and dissolve and collect the contaminants into the liquid; the contaminants in the extracted liquid are then measured qualitatively and quantitatively using a detection instrument in a similar manner and will not be repeated here.

Second embodiment

Referring to fig. 4a to 5b, a schematic structural diagram of a semiconductor processing apparatus 200 according to a second embodiment of the present invention is shown, wherein: FIG. 4a is a schematic cross-sectional view of a semiconductor processing apparatus of the present invention in a first embodiment; FIG. 4B is an enlarged schematic view of circle B in FIG. 4 a; FIG. 5a is a bottom view of the first chamber portion of the semiconductor processing apparatus of FIG. 4 a; fig. 5b is a top view of the second chamber portion of the semiconductor processing apparatus of fig. 4 a.

The semiconductor processing apparatus 200 in the second embodiment is largely identical in structure to the semiconductor processing apparatus 100 in the first embodiment, and therefore identical parts thereof are denoted by the same reference numerals, and the difference therebetween is mainly that: the seal joint 310 of the semiconductor processing apparatus 200 and the seal joint 210 of the semiconductor processing apparatus 100 are somewhat different in structure.

As shown in fig. 4b, the first chamber portion 110 has the seal engaging portion 310 located outside the first channel 116, and the second chamber portion 120 has the engaging groove 122 corresponding to the seal engaging portion 210.

The seal joint 310 includes a guide surface 311 at the distal end, an inner side surface 312 at the inner side upper end, and a projection 313 at the inner side distal end. When the second chamber portion 120 is located at the closed position relative to the first chamber portion 110, the tip of the seal engaging portion 310 protrudes into the engaging groove 122, the projection 313 thereof is in sealing engagement with the groove wall of the engaging groove 122, and the inner side surface 312 thereof forms the outer side surface of the outer-edge micro-processing space 130. The inner side surface 312 is spaced a distance from the outer edge of the semiconductor wafer 400.

The sealing surface formed by the protrusion 313 of the sealing joint 310 and the groove wall of the joint groove 122 is located below the outer edge micro-processing space 130 and perpendicular to the extending direction of the semiconductor wafer 400, and this arrangement can make the wall surface 117 of the first chamber portion 110 located inside the first groove 116 abut against the first side surface of the semiconductor wafer 400 to be processed more tightly, and the wall surface 127 of the second chamber portion 120 located inside the second groove 126 abuts against the second side surface of the semiconductor wafer 400 to be processed more tightly, so that the etching liquid is prevented from penetrating inward.

In the embodiment of fig. 4b, the bump 313 of the sealing joint 310 may achieve a centering of the semiconductor wafer 140 during closing of the second chamber part 120 with respect to the first chamber part 110, i.e. if the center of the semiconductor wafer 140 is offset from the desired center when placed, the bump 313 of the sealing joint 310 may also be corrected to the desired center by pressing against the semiconductor wafer 140.

There is still a distance between the inner side surface 312 and the outer edge of the semiconductor wafer 400. Such that the semiconductor wafer 140 may not be easily pinched by the seal joint 310 when the second chamber portion 120 is disengaged from the first chamber portion 110.

In another embodiment, the bump 313 may not be used to center the semiconductor wafer 140, i.e., the bump 313 does not contact the edge of the semiconductor wafer 140. While the centering of the semiconductor wafer 140 may be achieved with the wall edges of the first channel 116.

Third embodiment

Fig. 6 is a schematic diagram of a fluid processing device 600 according to an embodiment of the present invention.

In one embodiment, the fluid treatment apparatus 600 of the present invention may be used in conjunction with the

semiconductor treatment apparatus

100 or 200 of the first and second embodiments to form a semiconductor treatment system. Specifically, the fluid treatment device 600 may introduce fluid into the edge micro-treatment space 130 through an edge treatment through hole, and may also draw fluid out of the edge micro-treatment space 130 through an edge treatment through hole. In one embodiment, the extraction solution containing contaminants exiting the edge micro-processing space 130 may be introduced into the fluid processing device 600, and the extraction solution may be transferred to one or more detection instruments after being diluted or otherwise processed in the fluid processing device 600, with the detection instruments measuring the concentration of contaminants in the extraction solution. Of course, in other embodiments, the fluid handling device may also work in conjunction with other devices to provide fluid thereto or to conduct fluid away.

As shown in fig. 6, the fluid treatment device 600 includes a fluid container 610, a first rotary valve 621, a second rotary valve 622, and a line 630 connecting the various components.

Each

rotary valve

621 and 622 includes a common through bore and a plurality of selectable orifices (1-8). The common through-hole may be communicated with any one of the plurality of selectable through-holes (1-8) through an internal passage by rotating each rotary valve 620, and the respective selectable through-holes are not communicated with each other. The number of the optional through holes can be selected according to the requirement. The rotation of each rotary valve is automatically controllable by an external control unit, which expects each rotary valve to rotate to a certain selectable through hole, which rotary valve can rotate to a certain selectable through hole.

In the embodiment shown in fig. 6, optional throughbores 1, 5-8 of the first rotary valve 621 are sealed by plugs, and optional throughbore 2 is in communication with a first nitrogen port via a line that may be used to feed nitrogen from the top of vessel 610, providing positive pressure, which may be used to purge nitrogen from top to bottom to fluid vessel 610. The optional through hole 3 of the first rotary valve 621 communicates with a first sample introduction port for feeding a first liquid sample into the fluid container 610 through a line. The optional through hole 4 of the first rotary valve 621 communicates by a line with a first cleaning solution port for feeding the cleaning solution into the fluid container 610. The optional through holes 1, 5, 8 of the second rotary valve 622 are sealed by plugs, and the optional through hole 2 is in communication with a second nitrogen port through a line, which may be used to introduce nitrogen from the bottom of the container 610, and when there is liquid in the bottom of the container, the nitrogen introduced from the bottom of the container must pass through the liquid in the bottom of the container and into the space above the liquid. The nitrogen, as it passes through the liquid at the bottom of the vessel, agitates the liquid, helping the liquid mix. May be used to purge the fluid container 610 with nitrogen from bottom to top. The optional through hole 3 of the second rotary valve 622 is in communication with a second sample introduction port for feeding a second liquid sample into the fluid container 610 from the bottom of the fluid container 610 through a line. The optional through hole 4 of the second rotary valve 622 is in communication by a line with a second cleaning solution port for feeding the cleaning solution from the bottom of the fluid container 610. The optional through hole 7 of the second rotary valve 622 is in communication with the sample outlet via a line to conduct out the liquid sample within the fluid container 610. The optional through hole 6 of the second rotary valve 622 is in communication with the second waste outlet via a line to draw waste/exhaust (waste or exhaust or a mixture of waste and exhaust). Typically, the optional through hole 1 of each

rotary valve

621 and 622 is the initial gating position of the valve, and the optional through hole 1 is sealed by a plug, in which case the respective holes of

rotary valves

621 and 622 are not in communication with each other.

In another embodiment, the nitrogen may be replaced by other stabilizing gases (e.g., inert gases, etc.), which may also be referred to collectively as a gas port. In this embodiment, two rotary valves are shown, and in practice, three or more rotary valves may be provided to effect mixing and extraction of multiple liquid samples. Regardless, at least one rotary valve (e.g., the second rotary valve 622) has an optional through-hole in communication with the sample outlet for discharging the mixed liquid sample. Each rotary valve has a communication hole communicating with the nitrogen port, a communication hole communicating with the sample introduction port, and a communication hole communicating with the purge solution port.

The interior of the fluid container 610 forms a cavity, one or more through holes communicated with the cavity are formed at the top of the fluid container 610, and one or more through holes communicated with the cavity are formed at the bottom of the fluid container 610. One through hole 613 at the top (e.g., a through hole at the side of the top) may communicate with the common through hole of the first rotary valve 621 through a line 630, another through hole 613 at the top (e.g., at the center of the top) may communicate with the first waste outlet through a line 630 to remove waste liquid or exhaust gas, and one through hole at the bottom may communicate with the common through hole of the second rotary valve 621 through a line 630.

Fig. 7a and 7b show schematic structural views of a fluid container 610 in one embodiment of the present invention. As shown in fig. 7a and 7b, the fluid container 610 includes a cup 611 and a cap 612. The cup cover 612 and the cup body 611 can be tightly screwed and sealed through threads. In other embodiments, the cap 612 may be integral with the cup 611, in which case the "cap" is no longer a cap that can be removed from the cup, and the cap is used herein in a broad sense to refer not only to the cap of the cup. The cup 611 defines a cavity 619. The cup cover 612 is provided with a plurality of through holes 613, the through holes are communicated with the cavity 619, one through hole 613 is located at the top of the cup cover 612, and the other through holes are located at the side of the cup cover 612. The bottom of the cup 611 is also provided with a through hole 613 which communicates with the cavity 619. As shown in fig. 6, when the fluid container 610 of fig. 7a and 7b is applied to the fluid treatment device 600, one through hole 613 of the cap 612 (e.g., a through hole located at a side of the cap) may be in communication with the common through hole of the first rotary valve 621 through a line 630, one through hole 613 of the cap 612 (e.g., located at a top) may be in communication with the common through hole of the second rotary valve 622 through the line 630, and waste liquid or waste gas may be discharged through the line 630.

Fig. 8a and 8b show schematic structural views of a fluid container 610 according to the present invention in another embodiment. As shown in fig. 8a and 8b, the fluid container 610 includes a cup 614, a cup head 615 at one end of the cup 614, and a cup tail 616 at the other end of the cup 614. The cup 614, head 615 and tail 616 are integral. The cup 614 defines a cavity 619 therein. The cup head portion 615 is provided with a plurality of through holes 613, the through holes are communicated with the cavity 619, one through hole 613 is located at the top of the cup head portion 615, and the other through holes are located at the side portion of the cup head portion 615. The cup tail 616 is provided with a plurality of through holes 613, which are communicated with the cavity 619, wherein one through hole 613 is positioned at the bottom of the cup portion 615, and the other through holes are positioned at the side of the cup tail 615. In one embodiment, fig. 8c shows a schematic view of a cup blank 617 forming the fluid container 610 shown in fig. 8a and 8 b. As shown in fig. 8c, two cup blanks 617 are welded together to form the fluid container 610 shown in fig. 8a and 8 b.

As shown in connection with fig. 6, when the fluid container 610 of fig. 8a and 8b is applied to the fluid treatment device 600, one through-hole 613 of the cup head portion 615 (e.g., a through-hole located at a side of the cup head portion 615) may be in communication with the common through-hole of the first rotary valve 621 through a line 630, one through-hole 613 of the cup head portion 615 (e.g., a through-hole located at a center of the cup head portion 615) may be discharged waste liquid or waste gas through the line 630, and one through-hole of the cup tail portion 615 may be in communication with the common through-hole of the second rotary valve 622 through the line 630.

The operation of the fluid treatment device 600 will now be described.

1. The fluid container 610 receives a first liquid sample through a first rotary valve 621.

Before receiving the first liquid sample, both the first rotary valve 621 and the second rotary valve 622 are rotated to the selectable aperture 1 (i.e., the selectable aperture 1 is gated with the common through-hole), and neither line is liquid. The first rotary valve 621 is rotated to the selectable aperture 3 and the first liquid sample is introduced into the fluid container 610 through line 630, first rotary valve 621. If there are bubbles in the first liquid sample, these bubbles will be removed from the waste or waste gas through the through-holes and lines at the top of the fluid container 610. After the first liquid sample is received, the first rotary valve 621 is rotated to the selectable orifice 2, and the liquid in the line 630 between the first rotary valve 621 and the fluid container 610 is entirely fed into the fluid container 610 by nitrogen gas.

2. The fluid container 610 receives a second liquid sample through a second rotary valve 622.

Before receiving the second liquid sample, both the first rotary valve 621 and the second rotary valve 622 are rotated to the selectable aperture 1 (i.e., the selectable aperture 1 is gated with the common through-hole), and neither line is liquid. The second rotary valve 622 is rotated to the selectable aperture 3 and the second liquid sample is passed through line 630, second rotary valve 622, and into the fluid container 610. If there are bubbles in the second liquid sample, these bubbles will be removed from the waste or waste gas through the through-holes and lines at the top of the fluid container 610. After the second liquid sample is received, the second rotary valve 622 is rotated to the selectable aperture 2 and the liquid in line 630 between the second rotary valve 622 and the fluid container 610 is all fed into the fluid container 610 by nitrogen.

3. The fluid container 610 mixes a liquid sample.

The second rotary valve 622 is rotated to the selectable aperture 2, nitrogen is bubbled into the fluid container 610, and the liquid samples (e.g., the first liquid sample and the second liquid sample) in the fluid container 610 are uniformly mixed by the bubbling method. After the bubbling is completed, the second rotary valve 622 is switched to be rotated to the optional through hole 1.

4. A liquid sample is drawn from the fluid container 610.

The second rotary valve 622 is rotated to the selectable aperture 7 and the liquid sample in the fluid container 610 is drawn through the selectable aperture 7 of the second rotary valve 622.

5. Cleaning of the fluid container 610.

After the liquid sample in the fluid container 610 is drawn out, or when necessary, the first rotary valve 621 may be rotated to the selectable aperture 4 to introduce the washing solution into the fluid container 610, and a plurality of washing solutions may overflow through the through-hole at the top of the fluid container 610 to drain the waste liquid; it is also possible to simultaneously switch the second rotary valve 622 to the optional through hole 6, allowing the washing solution in the fluid container 610 to drain into the waste liquid. The first rotary valve 621 is switched to the selectable aperture 2, and the cleaning solution in the connection line 630 between the first rotary valve 621 and the fluid container 610 is blown into the fluid container 610.

Switching the second rotary valve 622 to the selectable aperture 4 to introduce the washing solution into the fluid container 610, and the excess washing solution can overflow through the through hole at the top of the fluid container 610 to drain the waste liquid; the second rotary valve 622 is switched to the selectable aperture 2 and the cleaning solution in the connection line 630 between the second rotary valve 622 and the fluid container 610 is blown into the fluid container 610.

Finally, the second rotary valve 622 is switched to the selectable aperture 6, discharging all of the washing solution in the fluid container 610 into the waste liquid. The first rotary valve 621 and the second rotary valve 622 are switched to the selectable aperture 1, and the cleaning of the fluid container 610 and the line 630 is completed.

In this way, the fluid container 610 may facilitate introduction, mixing, and withdrawal of liquid samples, as well as cleaning of the fluid container 620.

The fluid container 610 may be connected to a plurality of rotary valves, a plurality of liquid sample inlet ports are provided for receiving liquid samples of different sources, and each of the passages is provided with a corresponding purge port (port for connecting a purge solution) for purging the fluid container 610 and connecting lines to prevent cross-contamination.

The lowest point of the bottom of the fluid container 610 has a through hole connected to the rotary valve for drawing out the liquid sample and discharging the washing solution in the fluid container 610, and may be provided as an inlet port for the liquid sample. Multiple liquid sample outlets may also be provided for delivering samples to different liquid sample use ends.

For non-uniform liquid samples, such as a liquid sample having bubbles therein, after entering the fluid container 610, the bubbles are directly discharged through a through hole in the top center of the fluid container 610; if the ratio of the components before and after the liquid sample is different, the components are mixed naturally after entering the fluid container 610, for example, if the mixing is not uniform naturally, the mixing can be performed by bubbling nitrogen through a through hole in the bottom center of the fluid container 610. Through the design, the liquid sample can be a uniform liquid sample without bubbles when being led out, and the use of the use end is convenient.

The total volume of the fluid container 610 is typically less than 200 milliliters, such as 5 milliliters, 30 milliliters. By using the fluid processing device 600 of the present invention, a desired mixed liquid sample can be prepared in real time by using a plurality of liquid samples, and the mixed liquid sample can be supplied to the outside, for example, to the semiconductor processing device, thereby enabling online real-time processing.

In one embodiment, the first liquid sample may be an extraction solution containing contaminants exiting from the edge micro-processing space 130, and the second liquid sample may be a dilution solution. The liquid sample exiting the sample outlet may be introduced into a detection instrument to measure the concentration of contaminants in the extraction solution. This allows for on-line, real-time detection of edge contaminants.

According to another aspect of the present invention, the present invention also proposes a fluid treatment method based on the fluid treatment device 600, comprising: the fluid container 610 receives a first liquid sample and a second liquid sample through a first rotary valve 621; mixing the liquid sample within the fluid container 610; drawing out the liquid sample in the fluid container 610; cleaning of the fluid treatment device 600. The details are similar to those of the fluid treatment device 600 and will not be repeated here.

The foregoing description has fully disclosed specific embodiments of this invention. It should be noted that any modifications to the specific embodiments of the invention may be made by those skilled in the art without departing from the scope of the invention as defined in the appended claims. Accordingly, the scope of the claims of the present invention is not limited to the specific embodiments.

Claims

1. A fluid treatment device, comprising:

a pipeline;

at least two rotary valves, each rotary valve comprising a common through-hole and a plurality of selectable through-holes, the common through-hole being capable of communicating with one of the plurality of selectable through-holes via an internal passageway by rotating the rotary valve, one of the plurality of selectable through-holes of each rotary valve being in communication with the gas port via a line to receive the gas and/or one of the selectable through-holes being in communication with the sample inlet via a line to receive the liquid sample and/or one of the selectable through-holes being in communication with the wash solution port via a line to receive the wash solution, wherein one of the selectable through-holes of one rotary valve is in communication with the sample outlet via a line to drain the liquid sample; and

The fluid container is characterized in that a cavity is formed in the fluid container, one or more through holes communicated with the cavity are formed in the top of the fluid container, one or more through holes communicated with the cavity are formed in the bottom of the fluid container, one through hole in the top is communicated with the common through hole of one rotary valve through a pipeline, and one through hole in the bottom is communicated with the common through hole of the other rotary valve through a pipeline.

2. A fluid treatment device according to claim 1, wherein,

a through hole at the top of the fluid container communicates with the first waste outlet through a pipe line to discharge waste gas/liquid;

a selectable orifice of a rotary valve in communication with the bottom-located through-hole of the fluid container is in communication with the second waste outlet via a line to discharge waste gas/liquid.

3. The fluid treatment device of claim 2, wherein the fluid treatment device is purged, the purging comprising:

rotating each rotary valve to be cleaned to an optional through hole communicated with a cleaning solution port, introducing cleaning solution into the fluid container through the cleaning solution port, overflowing excessive cleaning solution through the through hole communicated with a first waste outlet at the top of the fluid container, switching each rotary valve to the optional through hole communicated with a gas port, and blowing the cleaning solution in a connecting pipeline between each rotary valve and the fluid container into the fluid container;

Switching a rotary valve in communication with a through-hole in the bottom of the fluid container to an optional through-hole in communication with a second waste outlet, and draining all of the cleaning solution in the fluid container through the second waste outlet.

4. The fluid processing device of claim 1, wherein introducing a liquid sample into the cavity of the fluid container comprises:

rotating a rotary valve to an optional through hole in communication with the sample introduction port;

the sample introduction port introduces the liquid sample into the cavity of the fluid container through the pipeline and the rotary valve, and if bubbles exist in the liquid sample, the bubbles are discharged through a through hole at the top of the fluid container, which is communicated with the first waste outlet;

after the reception of such liquid sample is completed, the rotary valve is rotated to an optional through hole communicating with the gas port, and the liquid sample in the line between the rotary valve and the fluid container is entirely fed into the cavity of the fluid container by the gas.

5. The fluid processing device of claim 4 wherein at least two liquid samples are introduced into the cavity of the fluid container prior to mixing of the liquid samples, the mixing comprising:

Rotating a rotary valve communicated with a through hole at the bottom of the fluid container to an optional through hole communicated with the gas port, introducing the gas into the fluid container for bubbling, and uniformly mixing the liquid sample in the fluid container by a bubbling method.

6. The fluid processing device of claim 4 wherein a rotary valve in communication with a through-hole in the bottom of the fluid container is rotated to an optional through-hole in communication with a sample extraction port through which a liquid sample in the fluid container is extracted.

7. The fluid treatment device according to claim 1, wherein the fluid container comprises a cup body and a cup cover, the cup cover and the cup body can be tightly screwed and sealed through threads, a cavity is defined in the cup body, a plurality of through holes communicated with the cavity are formed in the cup cover, a through hole communicated with the cavity is also formed in the bottom of the cup body, and the through hole is communicated with the cavity, or;

the fluid container comprises a cup body, a cup head part positioned at one end of the cup body and a cup tail part positioned at the other end of the cup body, a cavity is defined in the cup body, a plurality of through holes communicated with the cavity are formed in the cup head part, a plurality of through holes communicated with the cavity are formed in the cup tail part, and the fluid container is formed by welding two cup blanks together.

8. A fluid treatment method based on the fluid treatment device of any one of claims 1-2, 7, comprising:

introducing a liquid sample into a cavity of the fluid container, the process comprising: rotating a rotary valve to an optional through hole in communication with the sample introduction port; the sample introduction port introduces the liquid sample into the cavity of the fluid container through the pipeline and the rotary valve, and if bubbles exist in the liquid sample, the bubbles are discharged through a through hole at the top of the fluid container, which is communicated with the first waste outlet; after the reception of such liquid sample is completed, the rotary valve is rotated to an optional through hole communicating with the gas port, and the liquid sample in the line between the rotary valve and the fluid container is entirely fed into the cavity of the fluid container by the gas.

9. The fluid treatment method according to claim 8, further comprising:

introducing at least two liquid samples into the cavity of the fluid container, followed by mixing of the liquid samples, wherein the mixing comprises: rotating a rotary valve communicated with a through hole at the bottom of the fluid container to an optional through hole communicated with the gas port, introducing the gas into the fluid container containing the liquid sample for bubbling, and uniformly mixing the liquid sample in the fluid container by a bubbling method.

10. The fluid treatment method according to claim 9, further comprising:

rotating a rotary valve in communication with a through-hole in the bottom of the fluid container to an optional through-hole in communication with a sample extraction port through which a liquid sample in the fluid container is extracted.

11. The fluid treatment method according to claim 10, further comprising:

cleaning the fluid treatment device, wherein the cleaning comprises: rotating each rotary valve to be cleaned to an optional through hole communicated with a cleaning solution port, introducing cleaning solution into the fluid container through the cleaning solution port, overflowing excessive cleaning solution through the through hole communicated with a first waste outlet at the top of the fluid container, switching each rotary valve to the optional through hole communicated with a gas port, and blowing the cleaning solution in a connecting pipeline between each rotary valve and the fluid container into the fluid container; switching a rotary valve in communication with a through-hole in the bottom of the fluid container to an optional through-hole in communication with a second waste outlet, and draining all of the cleaning solution in the fluid container through the second waste outlet.

12. A semiconductor processing system, comprising:

the semiconductor processing device includes: a first chamber portion; a second chamber portion movable between an open position and a closed position with respect to the first chamber portion, wherein a micro chamber is formed between the first chamber portion and the second chamber portion when the second chamber portion is located at the closed position with respect to the first chamber portion, wherein a semiconductor wafer can be accommodated in the micro chamber, and wherein the semiconductor wafer can be taken out or put in when the second chamber portion is located at the open position with respect to the first chamber portion; wherein the first chamber portion has a first channel formed at an inner wall surface of the first chamber portion facing the micro chamber, the second chamber portion has a second channel formed at an inner wall surface of the second chamber portion facing the micro chamber, and when the second chamber portion is located at the closed position with respect to the first chamber portion and the semiconductor wafer is accommodated in the micro chamber, the first channel and the second channel communicate and jointly form an edge micro-processing space into which an outer edge of the semiconductor wafer accommodated in the micro chamber protrudes, the edge micro-processing space communicating with the outside through an edge processing through hole through which a fluid enters or exits;

A fluid treatment device according to any one of claims 1 to 7 in cooperation with said semiconductor processing device.

13. The semiconductor processing system of claim 12, wherein the semiconductor processing system comprises,

the fluid processing device directs the liquid sample exiting the sample exit port into the edge micro-processing space.

14. The semiconductor processing system of claim 12, wherein the first chamber portion has a seal engagement located outside the first channel and the second chamber portion has an engagement recess corresponding to the seal engagement;

the first side surface, the second side surface, and the outer end surface of the outer edge of the semiconductor wafer are exposed to the edge micro-processing space, one or more of the edge processing through holes serves as a fluid inlet, one or more of the edge processing through holes serves as a fluid outlet,

the edge micro-processing space is annular or arc-shaped, the outer edge of the semiconductor wafer stretches into the edge micro-processing space, and the edge micro-processing space is a closed space and is communicated with the outside through an edge processing through hole;

the inner sidewall portion top surface of the first channel abuts against a first side surface of the semiconductor wafer adjacent to the first chamber portion, and the inner sidewall portion top surface of the second channel abuts against a second side surface of the semiconductor wafer adjacent to the second chamber portion.

15. The semiconductor processing system of claim 12, wherein the semiconductor processing apparatus directs the contaminant-containing solution exiting the edge micro-processing space as a liquid sample into the fluid container through a sample-directing optional through-hole of a rotary valve coupled to the fluid container, and further through a sample-directing optional through-hole of a rotary valve, to one or more detection instruments, to perform qualitative and quantitative measurements and analysis of contaminants in the solution, or to an automated sample collection apparatus.