CN116072707A - Planar SiC MOSFET containing rare earth gate dielectric layer and manufacturing method thereof - Google Patents
Planar SiC MOSFET containing rare earth gate dielectric layer and manufacturing method thereof Download PDFInfo
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- CN116072707A CN116072707A CN202310089961.3A CN202310089961A CN116072707A CN 116072707 A CN116072707 A CN 116072707A CN 202310089961 A CN202310089961 A CN 202310089961A CN 116072707 A CN116072707 A CN 116072707A
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- rare earth
- gate oxide
- oxide layer
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- 229910052761 rare earth metal Inorganic materials 0.000 title claims abstract description 62
- 150000002910 rare earth metals Chemical class 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 29
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 26
- 238000000151 deposition Methods 0.000 claims description 15
- 238000005468 ion implantation Methods 0.000 claims description 14
- 238000000231 atomic layer deposition Methods 0.000 claims description 11
- 238000005566 electron beam evaporation Methods 0.000 claims description 11
- 238000001259 photo etching Methods 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 230000003247 decreasing effect Effects 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 20
- 230000005684 electric field Effects 0.000 abstract description 20
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 abstract description 11
- 238000009826 distribution Methods 0.000 abstract description 11
- 230000005855 radiation Effects 0.000 abstract description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 40
- 229910010271 silicon carbide Inorganic materials 0.000 description 38
- 238000010586 diagram Methods 0.000 description 13
- 230000002829 reductive effect Effects 0.000 description 11
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 150000001768 cations Chemical class 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000000411 inducer Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202310089961.3A CN116072707A (en) | 2023-02-08 | 2023-02-08 | Planar SiC MOSFET containing rare earth gate dielectric layer and manufacturing method thereof |
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CN202310089961.3A CN116072707A (en) | 2023-02-08 | 2023-02-08 | Planar SiC MOSFET containing rare earth gate dielectric layer and manufacturing method thereof |
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CN116072707A true CN116072707A (en) | 2023-05-05 |
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CN202310089961.3A Pending CN116072707A (en) | 2023-02-08 | 2023-02-08 | Planar SiC MOSFET containing rare earth gate dielectric layer and manufacturing method thereof |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002015233A2 (en) * | 2000-08-10 | 2002-02-21 | Walter Walter David Iv | Integrated transistor devices |
CN101308788A (en) * | 2007-01-10 | 2008-11-19 | 台湾积体电路制造股份有限公司 | Semiconductor apparatus and manufacturing method thereof |
CN102612736A (en) * | 2009-10-06 | 2012-07-25 | 瑞萨电子株式会社 | Semiconductor device and method of producing same |
CN104538450A (en) * | 2014-12-29 | 2015-04-22 | 中国科学院半导体研究所 | SiC VDMOSFET structure with low specific on-resistance and manufacturing method thereof |
US20150380498A1 (en) * | 2013-08-27 | 2015-12-31 | Fuji Electric Co., Ltd. | Method for producing a semiconductor device, and semiconductor device produced thereby |
JP2017208427A (en) * | 2016-05-18 | 2017-11-24 | 富士電機株式会社 | Method of manufacturing semiconductor device |
CN112103345A (en) * | 2020-09-22 | 2020-12-18 | 中国科学院微电子研究所 | SiC power MOSFET device |
CN112289845A (en) * | 2019-07-25 | 2021-01-29 | 创能动力科技有限公司 | Semiconductor device with JFET area layout design |
-
2023
- 2023-02-08 CN CN202310089961.3A patent/CN116072707A/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002015233A2 (en) * | 2000-08-10 | 2002-02-21 | Walter Walter David Iv | Integrated transistor devices |
CN101308788A (en) * | 2007-01-10 | 2008-11-19 | 台湾积体电路制造股份有限公司 | Semiconductor apparatus and manufacturing method thereof |
CN102612736A (en) * | 2009-10-06 | 2012-07-25 | 瑞萨电子株式会社 | Semiconductor device and method of producing same |
US20150380498A1 (en) * | 2013-08-27 | 2015-12-31 | Fuji Electric Co., Ltd. | Method for producing a semiconductor device, and semiconductor device produced thereby |
CN104538450A (en) * | 2014-12-29 | 2015-04-22 | 中国科学院半导体研究所 | SiC VDMOSFET structure with low specific on-resistance and manufacturing method thereof |
JP2017208427A (en) * | 2016-05-18 | 2017-11-24 | 富士電機株式会社 | Method of manufacturing semiconductor device |
CN112289845A (en) * | 2019-07-25 | 2021-01-29 | 创能动力科技有限公司 | Semiconductor device with JFET area layout design |
CN112103345A (en) * | 2020-09-22 | 2020-12-18 | 中国科学院微电子研究所 | SiC power MOSFET device |
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PB01 | Publication | ||
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CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Yang Weifeng Inventor after: Wang Xinwei Inventor after: Ye Xiaofeng Inventor after: Long Mingtao Inventor before: Yang Weifeng Inventor before: Wang Xinwei Inventor before: Ye Xiaofeng Inventor before: Long Mingtao |
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TA01 | Transfer of patent application right |
Effective date of registration: 20240617 Address after: Room 303, Building 2, Xiaoshan Robot Town Science and Technology Park, No. 389 Hongxing Road, Economic and Technological Development Zone, Xiaoshan District, Hangzhou City, Zhejiang Province, 310000 Applicant after: Hangzhou Hesheng Microelectronics Co.,Ltd. Country or region after: China Address before: Xiamen City, Fujian Province, 361005 South Siming Road No. 422 Applicant before: XIAMEN University Country or region before: China |