CN116054613A - High-efficiency inverse F-class voltage-multiplying type microwave rectifier - Google Patents

High-efficiency inverse F-class voltage-multiplying type microwave rectifier Download PDF

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CN116054613A
CN116054613A CN202211639796.6A CN202211639796A CN116054613A CN 116054613 A CN116054613 A CN 116054613A CN 202211639796 A CN202211639796 A CN 202211639796A CN 116054613 A CN116054613 A CN 116054613A
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microstrip line
diodes
microstrip
fundamental frequency
diode
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刘强
杨灿业
刘旺
杜广星
李国林
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Hunan University
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M7/25—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only arranged for operation in series, e.g. for multiplication of voltage
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0051—Diode reverse recovery losses
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Rectifiers (AREA)

Abstract

The invention discloses a high-efficiency inverse F-class voltage-multiplying microwave rectifier, which comprises a microstrip structure and an electronic element. The microstrip structure comprises a first microstrip line, a second microstrip line, a third microstrip line, a fourth microstrip line, a fifth microstrip line, a sixth microstrip line and a seventh microstrip line, and the electronic element comprises a blocking capacitor, two diodes, two filter capacitors and a load. The tail ends of the fourth microstrip line and the sixth microstrip line are grounded, the starting ends of the fourth microstrip line and the sixth microstrip line are respectively connected in series with diodes for overcompensating the capacitive reactance of the diodes under the fundamental frequency, the second microstrip line is integrated between the blocking capacitor and the common ends of the two diodes for completing the impedance matching of the fundamental frequency, and the seventh microstrip line is grounded through a metallized via hole. The two diodes are reversely connected in parallel with the third microstrip line to realize voltage doubling type double-branch rectification, and the blocking capacitor is connected between the first microstrip line and the third microstrip line in a bridging way to block direct current signals. The double-branch inverse F-type microwave rectifier has the advantages of high rectification efficiency, dynamic power range, compact structure, easy integration and the like, and can be widely applied to microwave energy transmission systems.

Description

High-efficiency inverse F-class voltage-multiplying type microwave rectifier
Technical Field
The invention belongs to the technical field of microwave energy transmission, and particularly relates to a high-efficiency inverse F-class voltage-multiplying type microwave rectifier based on a diode capacitive reactance overcompensation technology.
Background
The microwave rectifier is a key device of a receiving end of the microwave energy transmission system, plays a role in converting microwaves into direct current, and meanwhile, the conversion efficiency determines the system efficiency. In recent years, with the rapid development of semiconductor technology, the wireless sensor of the internet of things has gradually entered the category of ultra-low power consumption, and the wide application of medical implanted electronics and portable devices has greatly promoted the application of microwave energy transmission in a plurality of fields such as industry, biomedicine and the like. However, the conversion efficiency of the current microwave rectifier is low, which severely restricts the popularization and application of the microwave energy transmission system. The loss of the microwave rectifier mainly comprises diode loss, return loss and transmission loss, wherein the return loss and the transmission loss can be well solved through impedance matching and a low-consumption dielectric substrate, the diode loss becomes a main factor for restricting the improvement of the conversion efficiency of the microwave rectifier, and the diode loss is proportional to the size of the overlapping area of the voltage waveform and the current waveform of the microwave rectifier, so that the overlapping area can be reduced only through a harmonic modulation method, and the diode loss is reduced.
Researchers at home and abroad propose different types of harmonic modulation methods to reduce the pipe consumption and improve the conversion efficiency of the microwave rectifier. Harmonic recovery methods have been proposed to reduce harmonic energy losses, but because of the low higher harmonic energy duty cycle, and because the harmonic recovery branches introduce higher insertion loss, and they do not substantially reduce the pipe consumption, the improvement in conversion efficiency by harmonic recovery methods is very limited, with the highest conversion efficiency achieved by the current method being 72.8%. In order to reduce the consumption of the tube, class F and inverse class F harmonic control techniques are proposed to reshape the voltage-current waveform of the diode. The traditional class F is realized by adopting 1/4, 1/8 and 1/12 wavelength microstrip lines, and the use of the 1/4 wavelength microstrip line causes the structure to be not compact, and meanwhile, the insertion loss is higher. The improved F-type harmonic control is realized by only adopting 1/8 and 1/12 wavelength microstrip lines, but the line width of the 1/12 wavelength microstrip line is not resolved, the improved F-type harmonic control completely depends on the optimized value, and meanwhile, an extra tuning microstrip line is needed for realizing the fundamental frequency impedance matching. Under the same conditions, the capability of reducing parasitic resistance loss of the diode is better than that of the class F, so that the harmonic control of the class F is proposed to further improve the conversion efficiency, and the conversion efficiency is 80.4% because the 1/8 and 1/12 wavelength lines of the improved class F can be realized by switching positions, but the problems of undefined design parameters, need of additional tuning lines and the like are also existed. At present, inverse F-type harmonic control is only aimed at a single diode, the single diode is rectified only in a half period of a microwave signal, the energy utilization rate is low, meanwhile, the input impedance is high, the impedance matching implementation difficulty is high, and the voltage doubling type parallel double diodes can be rectified in a full period and the input impedance of parallel ports is low, so that the inverse F-type double diodes are easier to realize high-efficiency rectification compared with the single diode. He Zhongji et al use two sections of 1/8 wavelength microstrip line to compensate for the voltage doubling type double diode capacitive reactance so that the parallel port input impedance becomes a real impedance with a value approximately equal to 50Ω, thereby achieving fundamental frequency impedance matching. The real impedance value of the parallel port of the double diode of the rectifier completely depends on the adjustment of input power and load, the dynamic range of the input power and load is limited, the applicability is poor, meanwhile, the double diode branch circuit does not realize the high-efficiency rectification of the reverse F class, and the conversion efficiency is only 80.2%. Therefore, the reverse F-class voltage-multiplying type double diode microwave rectifier with high conversion efficiency, wide input power dynamic range, easy parameter analysis design and compact structure is designed, and has important research value and application value.
Disclosure of Invention
The technical problem to be solved by the invention is to provide the high-efficiency inverse F-class voltage-multiplying microwave rectifier which can ensure that the voltage-multiplying double branches simultaneously carry out inverse F-class high-efficiency rectification, provide microstrip line design parameter analysis solutions based on a diode capacitive reactance overcompensation method, avoid the use of tuning lines, and has a simple and compact structure and a wider dynamic power range.
In order to solve the technical problems, the invention adopts the following technical scheme:
a high-efficiency inverse F-class voltage-multiplying microwave rectifier is characterized in that: comprises a microstrip structure and an electronic element. The microstrip structure is a first microstrip line, a second microstrip line, a third microstrip line, a fourth microstrip line, a fifth microstrip line, a sixth microstrip line and a seventh microstrip line from left to right, and the electronic element comprises a blocking capacitor, two diodes, two filter capacitors and a load. The two filter capacitors provide a short circuit to ground path for a fourth microstrip line at the fundamental frequency and the second harmonic frequency, the tail ends of the fourth microstrip line and the sixth microstrip line are grounded, and the starting ends of the fourth microstrip line and the sixth microstrip line are respectively connected in series with diodes for overcompensating the capacitance of the diodes under the fundamental frequency, the second microstrip line is integrated between the blocking capacitor and the common ends of the two diodes for completing fundamental frequency impedance matching, the line widths of the second microstrip line, the fourth microstrip line and the sixth microstrip line are all obtained by analysis, and the seventh microstrip line is grounded through a metallized via hole. The two diodes are reversely connected in parallel with the third microstrip line to realize voltage doubling type double-branch rectification, and the blocking capacitor is connected between the first microstrip line and the third microstrip line in a bridging way to block direct current signals.
Further, the lengths of the fourth microstrip line and the sixth microstrip line are eighth of the fundamental frequency, the tail end of the sixth microstrip line is connected with the seventh microstrip line in series to the ground, the fourth microstrip line is respectively short-circuited to the ground at the fundamental frequency and the second harmonic frequency by connecting two filter capacitors in parallel, and further, the inductive reactance of the fourth microstrip line and the sixth microstrip line at the fundamental frequency is used for overcompensating the capacitive reactance of a diode, so that the input impedance of the common end of the two diodes falls on the upper semicircle of the normalized unit conductance circle of the Smith circle graph, and the capacitive reactance overcompensation of the diode can be realized by reducing the line width of the fourth microstrip line and the sixth microstrip line.
Further, the second microstrip line is open at the tail end and has a length of one-tenth wavelength of the fundamental frequency, and is connected in parallel between the blocking capacitor and the common end of the two diodes, and further, under the fundamental frequency, the admittance of the second microstrip line enables the input impedance of the common end of the two diodes to rotate clockwise from the upper semicircle of the unit conductance circle to the real-axis system characteristic impedance normalization point along the conductance circle, so that the fundamental frequency impedance matching is completed.
Further, the second microstrip line and the sixth microstrip line are subjected to ninety-degree bending and corner cutting treatment, and the corner cutting side length is equal to the microstrip line width. The third microstrip line and the fifth microstrip line are electronic element pads.
Further, the anode of the first diode is connected with the cathode of the second diode in parallel with the third microstrip line, the cathode of the first diode is connected with the fourth microstrip line in series, the anode of the second diode is connected with the sixth microstrip line in series, and the two diodes realize voltage doubling type double-branch rectification.
The invention has the beneficial effects that:
1) The rectification efficiency is high. The reverse double diode parallel structure ensures full period rectification of input signals, and simultaneously the voltage doubling type double branches simultaneously meet the impedance condition of reverse F class secondary and third harmonic, so that the double branches are in reverse F class rectification, and the rectification efficiency is high.
2) And the parameter analysis solution is carried out without tuning wires. The capacitive reactance of the diode is overcompensated by the inductive reactance of the 1/8 wavelength short-circuit microstrip line under the fundamental frequency, so that the input impedance of the common end of the two diodes falls on the upper semicircle of the normalized unit conductance circle of the Smith chart, and the characteristic impedance of the 1/12 wavelength open-circuit microstrip line is used for final fundamental frequency impedance matching, thereby avoiding the use of a tuning line. In addition, the invention provides the analysis solution of the characteristic impedance of the 1/8 and 1/12 wavelength microstrip line based on the boundary condition of the unit conductance circle, thereby determining the line width value, overcoming the blindness of the optimized value of the traditional inverse F line width, and ensuring that the design flow is clearer.
3) The structure is simple and compact. The invention adopts three sections of microstrip lines to realize double-branch inverse F-type high-efficiency rectification, has simple structure, easy processing and low cost, has a layout width of only 0.11 waveguide wavelength and a layout length of only 0.29 waveguide wavelength, and has a compact structure.
Drawings
Fig. 1 is a schematic diagram of the structure of the high-efficiency reverse class F voltage-multiplying rectifier of the present invention.
Fig. 2 is a schematic diagram of the parameter settings of the high efficiency inverse class F voltage boost rectifier of the present invention.
Fig. 3 is a fundamental frequency impedance matching diagram of the high efficiency inverse class F voltage boost rectifier of the present invention.
Fig. 4 is a graph of return loss for a high efficiency inverse class F voltage doubler rectifier of the present invention.
Fig. 5 is a frequency sweep plot of a high efficiency inverse class F voltage boost rectifier of the present invention.
Fig. 6 is a power sweep graph of a high efficiency inverse class F voltage boost rectifier of the present invention.
Fig. 7 is a graph of the resistance scan of the high efficiency inverse class F voltage boost rectifier of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by one of ordinary skill in the art without undue burden on the person of ordinary skill in the art based on embodiments of the present invention, are intended to be within the scope of the present invention.
As shown in FIG. 1, the invention designs a high-efficiency inverse F-class voltage-multiplying microwave rectifier, which comprises a microstrip structure and an electronic element. The microstrip structure comprises a first microstrip line 1, a second microstrip line 2, a third microstrip line 3, a fourth microstrip line 4, a fifth microstrip line 5, a sixth microstrip line 6 and a seventh microstrip line 7; the electronic component comprises a blocking capacitor 8, a first diode 9, a second diode 10, a first filter capacitor 11, a second filter capacitor 12 and a load 13; the first filter capacitor 11 and the second filter capacitor 12 provide a short circuit to ground path for the fourth microstrip line 4 under the fundamental frequency and the second harmonic frequency, the tail ends of the fourth microstrip line 4 and the sixth microstrip line 6 are grounded, the starting ends are respectively connected in series with the cathode of the first diode 9 and the anode of the second diode 10, the capacitive reactance of the diodes is used for overcompensation of the fundamental frequency, the second microstrip line 2 is integrated between the common ends of the blocking capacitor 8 and the two diodes to complete the impedance matching of the fundamental frequency, and the seventh microstrip line 7 is grounded through a metallized via hole. The two diodes are reversely connected in parallel with the third microstrip line 3 to realize voltage doubling type double-branch rectification, and the blocking capacitor 8 is connected between the first microstrip line 1 and the third microstrip line 3 in a bridging way to block direct current signals.
The lengths of the fourth microstrip line 4 and the sixth microstrip line 6 are eighth of the fundamental frequency, the tail end of the sixth microstrip line 6 is connected with the seventh microstrip line 7 in series to the ground, the fourth microstrip line 4 is respectively short-circuited to the ground at the fundamental frequency and the second harmonic frequency by connecting two filter capacitors in parallel, and further, the inductive reactance of the fourth microstrip line 4 and the sixth microstrip line 6 at the fundamental frequency is used for overcompensating the capacitive reactance of a diode, so that the input impedance of the common end of the two diodes falls on the upper semicircle of the normalized unit conductance circle of the Smith circle graph, and the capacitive reactance overcompensation of the diodes can be realized by reducing the line width of the fourth microstrip line 4 and the sixth microstrip line 6; the tail end of the second microstrip line 2 is open-circuited and the length of the second microstrip line is one-tenth wavelength of the fundamental frequency, the second microstrip line is connected in parallel between the blocking capacitor 8 and the common ends of the two diodes, and further, under the fundamental frequency, the admittance of the second microstrip line 2 enables the input impedance of the common ends of the two diodes to rotate clockwise from the upper semicircle of the unit conductance circle to the characteristic impedance normalization point of the real axis system along the conductance circle, so that the fundamental frequency impedance matching is completed; ninety-degree bending and corner cutting treatment is carried out on the second microstrip line 2 and the sixth microstrip line 6, the corner cutting side length is equal to the microstrip line width, and the third microstrip line 3 and the fifth microstrip line 5 are electronic element bonding pads; the anode of the first diode 9 and the cathode of the second diode 10 are connected in parallel with the third microstrip line 3, the cathode of the first diode 9 is connected in series with the fourth microstrip line 4, the anode of the second diode 10 is connected in series with the sixth microstrip line 6, and the two diodes realize voltage doubling type double-branch rectification.
Fig. 2 is a schematic diagram of parameter setting of the high-efficiency inverse class F voltage-multiplying rectifier according to the present invention, and the following is only one example of the present invention. The single-layer dielectric substrate selected in the embodiment is a medium-inch technology Teflon ZYF265D, the thickness of the single-layer dielectric substrate is 0.76mm, the dielectric constant is 2.65, the loss tangent value is 0.0019, the thicknesses of the upper surface microstrip line and the lower surface metal floor are 0.035mm, and the selected capacitor belongs to the AVX600F series. Example specific circuit design parameters were selected as follows: the first microstrip line 1 is an input port with a line width W 1 =2.03 mm, length L 1 =8.24 mm, second microstrip line 2 linewidth W 2 =0.81 mm, line length is defined by L 21 =3mm and L 22 The third microstrip line has 3 linewidth W 3 ＝W 2 Line length L =0.81 mm 3 =1.3 mm, fourth microstrip line 4 linewidth W 4 Line length L =0.7 mm 4 =9.7mm, fifth microstrip line 5 linewidth W 5 ＝W 4 Line length L =0.7 mm 5 =2.6mm, sixth microstrip line 6 linewidth W 6 =0.7 mm, line length is defined by L 61 =3mm and L 62 Formed by 6.7mm, the seventh microstrip line has 7 line width W 7 Wire length l=3.6 mm 7 =5.19 mm, the blocking capacitance 8 has a capacitance of 22pF, the first diode 9 and the second diodeThe diode 10 is a schottky diode HSMS282C, the first filter capacitor 11 has a capacitance of 27pF, the second filter capacitor 12 has a capacitance of 4.7pF, and the load 13 has a resistance of 400 Ω.
Fig. 3 is a fundamental frequency impedance matching diagram of the high-efficiency inverse F-type voltage-multiplying rectifier of the present invention. The individual diode impedance is defined as Z D ＝R D -jX D R is obtained by selecting input power and load resistance D When the value is smaller than 100 omega (the input power of the embodiment is 25dBm, the load resistance is 400 omega), the input impedance Z of the common ends of the two diodes P ＝Z D /2＝R P -jX P At this time R P The value is less than 50Ω, therefore Z P Outside normalized unit resistance circle R=1 (normalized to 50Ω), and then the capacitive reactance of the first diode 9 and the second diode 10 is overcompensated by the inductive reactance of the fourth microstrip line 4 and the sixth microstrip line 6 at the fundamental frequency, respectively, to realize impedance Z P To Z A Is the transition of Z A The input impedance of the common end of the two diodes after the fourth microstrip line 4 and the sixth microstrip line 6 are added and fall on a normalized unit conductance circle (normalizing 50 omega and then taking the reciprocal), at the moment, Y A ＝1/Z A ＝G A -jB A And meet G A =1, while the second microstrip line 2 belongs to an open microstrip line, input admittance Y 2 ＝1/Z 2 ＝jB 2 Wherein B is 2 ＝(tan(π/12))/Z 2 And Z is 2 Is the characteristic impedance of the second microstrip line 2. Therefore, the characteristic impedance of the second microstrip line 2 is selected reasonably to satisfy j (B) 2 -B A ) =0, realizing fundamental frequency impedance matching. Notably, B 2 The value increases as the characteristic impedance of the second microstrip line 2 decreases, and thus the microstrip line is easier to physically implement.
Fig. 4 is a graph of return loss for a high efficiency inverse class F voltage boost rectifier of the present invention. As shown in the figure, the reflection coefficient is smaller than-10 dB in the frequency band range of 2.14-2.80 GHz, and the reflection coefficient at the 2.45GHz position reaches-25.32 dB, which shows that the matching performance of the microwave rectifier is good.
Fig. 5 is a frequency sweep plot of a high efficiency inverse class F voltage boost rectifier of the present invention. As can be seen from the graph, the conversion efficiency of the embodiment is higher than 60% in 2.12-3.04 GHz, the relative bandwidth is 37.55%, the conversion efficiency at 2.45GHz is 80.81%, and the output voltage is higher than 8.8V in 2.12-3.04 GHz, which shows that the microwave rectifier can realize high-efficiency rectification and has high-efficiency rectification bandwidth of 37.55%.
Fig. 6 is a graph of power sweep for a high efficiency inverse class F voltage boost rectifier of the present invention. As can be seen from the graph, the conversion efficiency of the embodiment is higher than 50% in the input power range of 9.5-30 dBm, the effective dynamic range of the input power is as wide as 20.5dB, the peak conversion efficiency 83.35% is obtained at 29dBm, the fundamental frequency is 2.45GHz, the load resistance is 400 Ω, and the output voltage is higher than 1.3V in the range of 9.5-30 dBm. The result shows that the microwave rectifier has a wider dynamic range of input power and can be suitable for different input power scenes.
Fig. 7 is a graph of the resistance scan of a high efficiency inverse class F voltage doubler rectifier of the present invention. As can be seen from the graph, the conversion efficiency of the embodiment is higher than 50% in the load resistance range of 150-2000 Ω, the effective dynamic range of the load resistance is 1850 Ω, the peak conversion efficiency is 80.9% at 500 Ω, the fundamental frequency is 2.45GHz, the input power is 25dBm, and the output voltage increases with the load resistance. The result shows that the microwave rectifier has a wider dynamic range of load resistance and can cope with load resistance fluctuation to a certain extent.
In summary, the high-efficiency inverse F-class voltage-multiplying rectifier has the advantages of high rectifying efficiency, dynamic power range, compact structure, easy integration and the like, and can be widely applied to microwave energy transmission systems.

Claims (5)

1. A high-efficiency inverse F-class voltage-multiplying microwave rectifier is characterized in that: comprises a microstrip structure and an electronic element. The microstrip structure is a first microstrip line, a second microstrip line, a third microstrip line, a fourth microstrip line, a fifth microstrip line, a sixth microstrip line and a seventh microstrip line from left to right, and the electronic element comprises a blocking capacitor, two diodes, two filter capacitors and a load. The two filter capacitors provide a short circuit to ground path for a fourth microstrip line at the fundamental frequency and the second harmonic frequency, the tail ends of the fourth microstrip line and the sixth microstrip line are grounded, and the starting ends of the fourth microstrip line and the sixth microstrip line are respectively connected in series with diodes for overcompensating the capacitance of the diodes under the fundamental frequency, the second microstrip line is integrated between the blocking capacitor and the common ends of the two diodes for completing fundamental frequency impedance matching, the line widths of the second microstrip line, the fourth microstrip line and the sixth microstrip line are all obtained by analysis, and the seventh microstrip line is grounded through a metallized via hole. The two diodes are reversely connected in parallel with the third microstrip line to realize double-branch voltage-multiplying rectification, and the blocking capacitor is connected between the first microstrip line and the third microstrip line in a bridging way to block direct current signals.
2. The high efficiency inverse class F voltage boost microwave rectifier of claim 1, wherein: the lengths of the fourth microstrip line and the sixth microstrip line are eighth wavelength of the fundamental frequency, the tail end of the sixth microstrip line is connected with the seventh microstrip line in series to the ground, the fourth microstrip line is respectively short-circuited to the ground at the fundamental frequency and the second harmonic frequency through parallel connection of two filter capacitors, further, the inductive reactance of the fourth microstrip line and the sixth microstrip line at the fundamental frequency is used for overcompensating the capacitive reactance of a diode, so that the input impedance of the common end of the two diodes falls on the upper semicircle of the normalized unit conductance circle of the Smith circle graph, and the capacitive overcompensation of the diode can be realized by reducing the line width of the fourth microstrip line and the sixth microstrip line.
3. The high efficiency inverse class F voltage boost microwave rectifier of claim 1, wherein: the second microstrip line is opened at the tail end and has a length of one-twelfth wavelength of the fundamental frequency, and is connected in parallel between the blocking capacitor and the common end of the two diodes, and further, under the fundamental frequency, the admittance of the second microstrip line enables the input impedance of the common end of the two diodes to rotate clockwise from the upper semicircle of the unit conductance circle to the real-axis system characteristic impedance normalization point along the conductance circle, so that the fundamental frequency impedance matching is completed.
4. The high efficiency inverse class F voltage boost microwave rectifier of claim 1, wherein: and the second microstrip line and the sixth microstrip line are subjected to ninety-degree bending and corner cutting treatment, and the corner cutting side length is equal to the microstrip line width. The third microstrip line and the fifth microstrip line are electronic element pads.
5. The high efficiency inverse class F voltage boost microwave rectifier of claim 1, wherein: the anode of the first diode is connected with the cathode of the second diode in parallel with the third microstrip line, the cathode of the first diode is connected with the fourth microstrip line in series, the anode of the second diode is connected with the sixth microstrip line in series, and the two diodes realize voltage doubling type double-branch rectification.
CN202211639796.6A 2022-12-20 2022-12-20 High-efficiency inverse F-class voltage-multiplying type microwave rectifier Pending CN116054613A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117353558A (en) * 2023-12-04 2024-01-05 广州奕至家居科技有限公司 Voltage-multiplying rectifying circuit and device based on F-type harmonic suppression structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117353558A (en) * 2023-12-04 2024-01-05 广州奕至家居科技有限公司 Voltage-multiplying rectifying circuit and device based on F-type harmonic suppression structure
CN117353558B (en) * 2023-12-04 2024-03-29 广州奕至家居科技有限公司 Voltage-multiplying rectifying circuit and device based on F-type harmonic suppression structure

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