CN112838833A - F-type power amplifier based on hairpin type microstrip band-pass filter and design method - Google Patents
F-type power amplifier based on hairpin type microstrip band-pass filter and design method Download PDFInfo
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Abstract
The invention discloses an F-type power amplifier based on a hairpin-type microstrip band-pass filter and a design method thereof. Compared with the prior art, the novel output matching network provided by the invention consists of a harmonic control network and a hairpin type microstrip band-pass filter, and the optimal load impedance of the transistor is converted into the input real impedance required by the filter while the harmonic control network and the drain electrode bias network are combined to inhibit the second harmonic and the third harmonic. Moreover, the microstrip band-pass filter with the hairpin structure has the characteristics of miniaturization, good in-band characteristic and the like. On the premise that the output matching structure becomes more compact, the output power and the drain efficiency of the designed power amplifier in a frequency band are improved.
Description
Technical Field
The invention relates to the field of radio frequency circuit design, and provides a class-F power amplifier based on a hairpin type microstrip band-pass filter and a design method.
Background
With the rapid development of the 5G mobile communication technology and the commercial stage, the development of the intelligent mobile terminal and the communication base station is continuously driven. The 5G communication system has the outstanding characteristics of large bandwidth, high frequency, low time delay, high reliability and the like, and needs to be put into larger-scale equipment. The radio frequency module is used as a key component of a transmitter in a communication system and is used for amplifying radio frequency signals of a transmitting channel, and bandwidth, stability, efficiency, linearity and output power are key indexes influencing the performance of the radio frequency module. Considering the problem of power consumption of a 5G communication base station and achieving high data volume communication, increasing the number of frequency bands required to be processed, high efficiency is mostly required. This puts higher demands on the power amplifier.
In a conventional wireless communication transmitter, a filter and a power amplifier are separately designed, resulting in a large size of the entire transmitter. And how to achieve high efficiency and high output power in a high frequency band is a very troublesome problem. The output matching network of the conventional power amplifier is very complex and large in size, and simultaneously, the suppression of out-of-band noise and harmonics is difficult, thereby increasing unnecessary design loss of the power amplifier.
Therefore, in order to overcome the above-mentioned drawbacks of the prior art, research and improvement are needed to provide a design concept of a class F power amplifier with a compact output matching structure.
Disclosure of Invention
The invention provides a class-F power amplifier based on a hairpin type microstrip band-pass filter and a design method thereof, aiming at the defects of the power amplifier in the prior art in harmonic suppression and output matching structure design. The hairpin type microstrip band-pass filter is designed by low-pass filtering and frequency conversion of the band-pass filter and U-shaped folding of the cascade parallel coupling microstrip lines, a fundamental wave matching network is not required to be designed, the structural complexity and the design size are reduced, out-of-band noise and harmonic waves are effectively inhibited, the overall efficiency is improved, and meanwhile, the hairpin type microstrip band-pass filter is used for reducing the processing cost.
In order to overcome the defects of the prior art, the invention adopts the following technical scheme:
a class F power amplifier based on a hairpin type microstrip band-pass filter comprises an input matching network, a grid bias network, a transistor, a harmonic control network, a drain bias network and the hairpin type microstrip band-pass filter,
the input end of the input matching network is connected with a signal source with the internal resistance of 50 ohms, the output end of the input matching network is connected with the grid electrode of the transistor, and the maximum power input is realized by matching the conjugate of the optimal source impedance of the transistor to 50 ohms.
The grid electrode bias network and the drain electrode bias network are respectively connected with the grid electrode and the drain electrode of the transistor and provide stable direct current working voltage for the transistor.
The input end of the harmonic control network is connected with the drain electrode of the transistor, and the output end of the harmonic control network is connected with the hairpin type microstrip band-pass filter.
The input end of the hairpin type microstrip band-pass filter is connected with the harmonic control network, and the output end of the hairpin type microstrip band-pass filter is connected with the 50 ohm load end.
The harmonic control network simplifies a harmonic matching network by adding parallel open-circuit fan-shaped microstrip lines in a drain bias network, and comprises a first microstrip line TL1, a second microstrip line TL2, a third microstrip line TL3, a fourth microstrip line TL4, a fifth microstrip line TL5 and a sixth microstrip line TL6, wherein TL1, TL2 and TL4 are series microstrip lines, and TL3, TL5 and TL6 are parallel microstrip lines; one end of a sixth microstrip line TL6 is connected with one end of a fifth microstrip line TL5, one end of a fifth microstrip line TL5 is connected with one end of a fourth microstrip line TL4, one end of the fourth microstrip line TL4 is connected with one ends of a second microstrip line TL2 and a third microstrip line TL3, and the first microstrip line TL1 is connected with a drain of the transistor and one end of the second microstrip line TL 2; the first microstrip line TL1 is used as a tuning line for compensating the parasitic capacitance of the transistor; the first microstrip line TL1, the second microstrip line TL2, the fourth microstrip line TL4, the fifth microstrip line TL5 and the sixth microstrip line TL6 control second harmonic waves together; the first microstrip line TL1, the second microstrip line TL2 and the third microstrip line TL3 jointly control third harmonic, and second harmonic short circuit and third harmonic open circuit are achieved on the end face of a transistor current source.
The hairpin microstrip band-pass filter has good in-band characteristics and comprises a first series microstrip line TL7, a second series microstrip line TL8, a third series microstrip line TL9, a fourth series microstrip line TL10, a fifth series microstrip line TL11, a first parallel coupling microstrip line CLin1, a second parallel coupling microstrip line CLin2, a third parallel coupling microstrip line CLin3 and a fourth parallel coupling microstrip line CLin 4; the first microstrip line TL7 is connected to a port 1 of the first parallel-coupled microstrip line CLin1, the second series microstrip line TL8 is connected to a port 3 of the first parallel-coupled microstrip line CLin1 and a port 1 of the second parallel-coupled microstrip line CLin2, the third series microstrip line TL9 is connected to a port 3 of the second parallel-coupled microstrip line CLin2 and a port 1 of the third parallel-coupled microstrip line CLin3, the fourth series microstrip line TL10 is connected to a port 3 of the third parallel-coupled microstrip line CLin3 and a port 1 of the fourth parallel-coupled microstrip line CLin4, and the fifth series microstrip line TL11 and a port 3 of the fourth parallel-coupled microstrip line CLin4 are connected to a 50-ohm load terminal.
The invention also discloses a design method of the F-type power amplifier based on the hairpin-type microstrip band-pass filter, which is realized by the following steps:
step S1: carrying out multiple load pulling and source pulling on the GaN HEMT CGH40010F transistor, and obtaining the optimal load impedance and the optimal source impedance of the transistor when the power is added with efficiency and the maximum output power;
step S2: performing conjugate setting according to the optimal source impedance obtained in the step S1, and performing matching operation with the 50 ohm internal resistance of the signal source in a step impedance matching mode to complete the design of an input matching circuit so that the transistor obtains a maximum power input signal;
step S3: a quarter-wavelength microstrip line is adopted to design a grid bias network and a drain bias network so as to ensure that the power amplifier has stable direct-current supply voltage;
step S4: designing a harmonic control network, effectively combining with a drain electrode bias network, and simultaneously enabling the drain electrode voltage and current waveform of the power amplifier to meet F-type conditions and the central frequency point F of a working frequency band0Characteristic impedance Z of microstrip linenFor free parameters, the line length theta of each microstrip line needs to be solvedn(ii) a The lengths of the designed microstrip lines TL6, TL5 and TL3 are respectively
Make 2f0Short circuit at point B, 3f0The open circuit is realized at the point c, and the length of the microstrip line TL2 is designed to be
Selecting the appropriate Z1And Z4The electrical lengths of the microstrip lines TL1 and TL4 may be determined, eventually to achieve 2f at point E, respectively0And 3f0Short circuit and open circuit;
step S5: designing a hairpin microstrip band-pass filter, wherein the filter can only convert 50 ohm load impedance into real impedance, and fundamental impedance and harmonic impedance can be matched to an optimal region through the harmonic control network of the step S4; in order to determine the parameters of the filter, it is necessary to apply load pulling techniques at the center frequency f0Obtaining the best fundamental wave impedance, and converting the best fundamental wave impedance into real impedance through a harmonic wave control network
As a designed input impedance; obtaining a low-pass prototype parameter of the three-order Chebyshev-based low-pass filter by looking up a table according to the three-order Chebyshev-based low-pass filter and the 0.1dB attenuation ripple value; calculating the characteristic impedance Z of odd-even mode of each section of coupling line0oAnd Z0e(ii) a Through Z0oAnd Z0eWith given microstrip line substrate parameter (dielectric relative dielectric constant epsilon)rAnd the dielectric thickness d), solving the width W of the microstrip line and the microstrip line coupling distance S; finally, the lengths are
The parallel coupling microstrip line is folded to reduce the length by half
To reduce the overall size of the filter;
step S6: and building an overall circuit structure by combining the steps S1, S2, S3, S4 and S5, and performing circuit simulation and optimization by using ADS software to ensure that the optimal performance is realized.
The invention improves the output matching network of the traditional power amplifier, and combines the F-type harmonic control network and the hairpin-type microstrip band-pass filter, wherein the F-type harmonic control network matches the second harmonic impedance and the third harmonic impedance to the optimal region and tunes the input impedance of the filter to real impedance, and further, the hairpin-type microstrip band-pass filter is designed by carrying out U-shaped folding on the cascade parallel coupling microstrip lines, and the fundamental wave matching network is not required to be designed, thereby not only realizing the miniaturization of the output matching network and improving the overall efficiency, but also having good application prospect in 5G commercial frequency band.
Drawings
FIG. 1 is a schematic diagram of a class F power amplifier based on a hairpin microstrip band-pass filter according to the present invention;
FIG. 2 is a schematic diagram of a harmonic control network topology of the present invention;
FIG. 3a is a schematic diagram of a second harmonic short circuit control circuit;
FIG. 3b is a schematic diagram of a third harmonic open circuit control circuit;
FIG. 4 is a schematic diagram of a hairpin microstrip bandpass filter topology of the present invention;
fig. 5a is an equivalent circuit schematic diagram of a single set of coupled microstrip lines;
fig. 5b is a schematic diagram of the odd-even mode impedance analysis of the coupled microstrip line.
FIG. 6 is a schematic diagram of S-parameter simulation results of hairpin microstrip bandpass filter of the present invention
Fig. 7 is a graph showing simulation results of output power, efficiency and gain of a class F power amplifier based on a hairpin microstrip band-pass filter according to the present invention.
Detailed Description
Specific embodiments of the present invention will be further illustrated below with reference to the following examples and drawings:
in a conventional wireless communication transmitter, a filter and a power amplifier are separately designed, resulting in a large size of the entire transmitter. And how to design a compact output matching network in a high frequency band is a very difficult problem. The output matching network of the conventional power amplifier is very complex and large in size, and the suppression of out-of-band noise and second and third harmonics is difficult, which affect each other to match the harmonics to an undesired impedance value, thereby increasing unnecessary design loss.
The harmonic control network and the hairpin microstrip band-pass filter are utilized, the miniaturization of an output matching structure and the good characteristics in the band are guaranteed, meanwhile, short circuit and open circuit are respectively realized on the second harmonic and the third harmonic, the influence on fundamental frequency is reduced, and the efficiency and the output power in the band are improved.
Referring to fig. 1, a schematic diagram of a class F power amplifier based on a hairpin microstrip band-pass filter according to the present invention is shown, including an input matching network, a gate bias network, a transistor, a harmonic control network, a drain bias network, and a hairpin microstrip band-pass filter, wherein,
the input end of the input matching network is connected with a signal source with the internal resistance of 50 ohms, the output end of the input matching network is connected with the grid electrode of the transistor, and maximum power input is achieved by matching the conjugate of the optimal source impedance of the transistor to 50 ohms.
The grid bias network and the drain bias network are respectively connected with the grid and the drain of the transistor to provide stable direct-current working voltage for the transistor, and the bypass capacitors and the quarter-wavelength microstrip line in the two bias networks play a role of radio frequency open circuit to prevent radio frequency signals from leaking into the bias networks.
The input end of the harmonic control network is connected with the drain electrode of the transistor, and the output end of the harmonic control network is connected with the hairpin type microstrip band-pass filter.
The input end of the hairpin type microstrip band-pass filter is connected with the harmonic control network, and the output end of the hairpin type microstrip band-pass filter is connected with the 50 ohm load end.
Referring to fig. 2, a schematic diagram of a topology structure of a harmonic control network is shown, and a harmonic matching network is simplified by adding parallel open-circuit sector microstrip lines in a drain bias network. The microstrip line structure comprises a first microstrip line TL1, a second microstrip line TL2, a third microstrip line TL3, a fourth microstrip line TL4, a fifth microstrip line TL5 and a sixth microstrip line TL6, wherein TL1, TL2 and TL4 are series microstrip lines, and TL3, TL5 and TL6 are parallel microstrip lines; one end of a sixth microstrip line TL6 is connected with one end of a fifth microstrip line TL5, one end of a fifth microstrip line TL5 is connected with one end of a fourth microstrip line TL4 and one end of a hairpin type microstrip band-pass filter, one end of the fourth microstrip line TL4 is connected with one end of a second microstrip line TL2 and one end of a third microstrip line TL3, and the first microstrip line TL1 is connected with the drain of a transistor and one end of the second microstrip line TL 2; the first microstrip line TL1 is used as a tuning line for compensating the parasitic capacitance of the transistor; the first microstrip line TL1, the second microstrip line TL2, the fourth microstrip line TL4, the fifth microstrip line TL5 and the sixth microstrip line TL6 control second harmonic waves together; the first microstrip line TL1, the second microstrip line TL2 and the third microstrip line TL3 jointly control third harmonic, and second harmonic short circuit and third harmonic open circuit are achieved on the end face of a transistor current source.
Further, the calculation of the parameters of the microstrip line of the harmonic control network is explained as follows:
the specific parameter of the microstrip line is electrical lengthDegree thetanAnd a characteristic impedance ZnWherein the characteristic impedance ZnFor free parameters, the parameter sought is the electrical length θn. Meanwhile, in order to separately illustrate the control of the second harmonic wave and the third harmonic wave, the central frequency point f of the working frequency band is divided into0And f'0Electrical length thetanAnd θ'nCharacteristic impedance ZnAnd Z'nAnd so on.
Referring to fig. 3a, in the design of the second harmonic short circuit, the second harmonic short circuit is realized at the point a by connecting an open-circuit fan-shaped microstrip line TL6 in parallel with the drain bias network, the second harmonic short circuit point is transferred from the point a to the point B by a quarter-wavelength microstrip line TL5, and finally the second harmonic short circuit is realized at the current source end face of the transistor by the total length of the quarter-wavelength microstrip lines of the microstrip lines TL1, TL2 and TL 4. The impedance from the point a to the open end of the sixth microstrip line TL6 is
The impedance from point B to point A is
The impedance from point C to point B is
The impedance from point D to point C is
The impedance from point E to point D is
Referring to fig. 3b, in the design of the third harmonic open circuit, the open circuit point is transferred to the point C' through the second microstrip line TL2 with the length of one twelfth wavelength, and finally, the third harmonic short open circuit is realized on the current source end face of the transistor through the microstrip line TL2 with the length of one twelfth wavelength and the tuning microstrip line TL 1. The impedance from the point C' to the open end of the third microstrip line TL3 is
The impedance from point D 'to point C' is
The impedance from point E 'to point D' is
By making equations (1), (2) and (5) approach 0 (short circuit) and equations (6) and (7) approach ∞ (open circuit), the length of the resulting microstrip line TL6 is set to be
Microstrip line TL5 having a length of
Microstrip line TL4 having a length of
Microstrip line TL3 having a length of
By selecting the appropriate Z1And Z4The electrical length of the microstrip lines TL1 and TL4 can be determined. The harmonic control network is combined with the drain electrode bias network, so that the design is reduced while the second harmonic and the third harmonic are effectively inhibitedA space.
Referring to fig. 4, the hairpin microstrip band-pass filter has good in-band characteristics, and includes a first series microstrip line TL7, a second series microstrip line TL8, a third series microstrip line TL9, a fourth series microstrip line TL10, a fifth series microstrip line TL11, a first parallel coupling microstrip line CLin1, a second parallel coupling microstrip line CLin2, a third parallel coupling microstrip line CLin3, and a fourth parallel coupling microstrip line CLin 4; the first microstrip line TL7 is connected to a port 1 of the first parallel-coupled microstrip line CLin1, the second series microstrip line TL8 is connected to a port 3 of the first parallel-coupled microstrip line CLin1 and a port 1 of the second parallel-coupled microstrip line CLin2, the third series microstrip line TL9 is connected to a port 3 of the second parallel-coupled microstrip line CLin2 and a port 1 of the third parallel-coupled microstrip line CLin3, the fourth series microstrip line TL10 is connected to a port 3 of the third parallel-coupled microstrip line CLin3 and a port 1 of the fourth parallel-coupled microstrip line CLin4, and the fifth series microstrip line TL11 and a port 3 of the fourth parallel-coupled microstrip line CLin4 are connected to a 50-ohm load terminal.
Furthermore, the design working principle of the hairpin-type microstrip band-pass filter is further explained:
since the filter can only convert a 50 ohm load impedance into a real impedance, the fundamental impedance and the harmonic impedance can be matched to an optimal region through the harmonic control network. In order to determine the parameters of the filter, it is necessary to apply load pulling techniques at the center frequency f0Obtaining the best fundamental wave impedance, and converting the best fundamental wave impedance into real impedance through a harmonic wave control network
As the designed input impedance. Referring to fig. 5a, a parallel coupled microstrip line is equivalent to an admittance-inverted converter and connected to two sides with electrical lengths of theta and characteristic impedance of Z0The combination of the microstrip lines of (1) can obtain the ABCD matrix parameters of the equivalent circuit:
referring to fig. 5b, the cascaded parallel coupled microstrip lines are subjected to odd-even mode analysis, which is represented by the following formula:
wherein Z0oAnd Z0eCharacteristic impedance of odd-even mode for single group of parallel coupled microstrip lines, ZinoAnd ZineFor the odd and even mode input impedance of the filter, gnBeing a parameter of a third-order low-pass prototype filter, WcIs the relative bandwidth of the band-pass filter, Z0Is a characteristic impedance of the microstrip line, JnInverting the parameters of the converter for each admittance by Z0oAnd Z0eWith given microstrip line substrate parameter (dielectric relative dielectric constant epsilon)rAnd the dielectric thickness d), solving the width W of the microstrip line and the microstrip line coupling distance S.
After discussing a section of parallel coupling microstrip line, a band-pass filter of cascading a plurality of sections of parallel coupling microstrip lines is considered, and the length of the microstrip line between two admittance-inversed converters is
The length of the microstrip line is halved after the microstrip line is U-shaped folded
Forming the novel hairpin type microstrip band-pass filter. The odd-even mode input impedance is introduced into the scattering parameter, and the expression of the scattering parameter can be obtained as follows:
the scattering parameters of the hairpin type microstrip band-pass filter can be calculated and analyzed through the formula, and the filtering performance parameters in the working frequency band can be obtained.
Referring to fig. 6 and 7, shown are graphs of simulation results of gain, output power and efficiency of the F-class power amplifier based on the hairpin microstrip band-pass filter of the present invention, in an operating frequency band of 3.2 to 3.7GHz, the saturated output power is 39.8dBm to 42.1dBm, the gain is 9.8dB to 12.1dB, and the drain efficiency is 60.1% to 68.3%, which are consistent with the design method set forth in the present invention.
The invention relates to a design method of an F-type power amplifier based on a hairpin-type microstrip band-pass filter, which is realized by the following steps:
step S1: carrying out multiple load pulling and source pulling on the GaN HEMT CGH40010F transistor, and obtaining the optimal load impedance and the optimal source impedance of the transistor when the power is added with efficiency and the maximum output power;
step S2: performing conjugate setting according to the optimal source impedance obtained in the step S1, and performing matching operation with the 50 ohm internal resistance of the signal source in a step impedance matching mode to complete the design of an input matching circuit so that the transistor obtains a maximum power input signal;
step S3: a quarter-wavelength microstrip line is adopted to design a grid bias network and a drain bias network so as to ensure that the power amplifier has stable direct-current supply voltage;
step S4: designing a harmonic control network, effectively combining with a drain electrode bias network, and simultaneously enabling fundamental wave, second harmonic and third harmonic impedance of the power amplifier to meet F-type power amplification and central frequency point F of a working frequency band0Characteristic impedance Z of microstrip linenFor free parameters, the line length theta of each microstrip line needs to be solvedn(ii) a The lengths of the designed microstrip lines TL6, TL5 and TL3 are respectively
Make 2f0Short circuit at point B, 3f0The open circuit is realized at the point C, and the length of the microstrip line TL2 is designed to be
And selecting the appropriate Z1And Z4The electrical lengths of the microstrip lines TL1 and TL4 may be determined, eventually to achieve 2f at point E, respectively0And 3f0Short circuit and open circuit.
Step S5: the hairpin microstrip band pass filter is designed to match the fundamental impedance and the harmonic impedance to the optimum region by the harmonic control network of step S4 because the filter can convert only the 50 ohm load impedance into the real impedance. In order to determine the parameters of the filter, it is necessary to apply load pulling techniques at the center frequency f0Obtaining the best fundamental wave impedance, and converting the best fundamental wave impedance into real impedance through a harmonic wave control network
As the designed input impedance. Referring to fig. 5a, a parallel coupled microstrip line is equivalent to an admittance-inverted converter and connected to two sides with electrical lengths of theta and characteristic impedance of Z0The combination of the microstrip lines of (1) can obtain the ABCD matrix parameters of the equivalent circuit:
referring to fig. 5b, the cascaded parallel coupled microstrip lines are subjected to odd-even mode analysis, which is represented by the following formula:
wherein Z0oAnd Z0eCharacteristic impedance of odd-even mode for single group of parallel coupled microstrip lines, ZinoAnd ZineFor the odd and even mode input impedance of the filter, gnBeing a parameter of a third-order low-pass prototype filter, WcIs the relative bandwidth of the band-pass filter, Z0Is a characteristic impedance of the microstrip line, JnInverting the parameters of the converter for each admittance by Z0oAnd Z0eWith given microstrip line substrate parameter (dielectric relative dielectric constant epsilon)rAnd the dielectric thickness d), solving the width W of the microstrip line and the microstrip line coupling distance S.
After discussing a section of parallel coupling microstrip line, a band-pass filter of cascading a plurality of sections of parallel coupling microstrip lines is considered, and the length of the microstrip line between two admittance-inversed converters is
The length of the microstrip line is halved after the microstrip line is U-shaped folded
Forming the novel hairpin type microstrip band-pass filter. The odd-even mode input impedance is introduced into the scattering parameter, and the expression of the scattering parameter can be obtained as follows:
the scattering parameters of the hairpin type microstrip band-pass filter can be calculated and analyzed through the formula, and the filtering performance parameters in the working frequency band can be obtained.
Step S6: and building an overall circuit structure by combining the steps S1, S2, S3, S4 and S5, and performing circuit simulation and optimization by using ADS software to ensure that the optimal performance is realized.
Referring to fig. 6 and 7, shown are graphs of simulation results of gain, output power and efficiency of the F-class power amplifier based on the hairpin microstrip band-pass filter of the present invention, in an operating frequency band of 3.2 to 3.7GHz, the saturated output power is 39.8dBm to 42.1dBm, the gain is 9.8dB to 12.1dB, and the drain efficiency is 60.1% to 68.3%, which are consistent with the design method set forth in the present invention.
The above description of the embodiments is only intended to facilitate the understanding of the method of the invention and its core idea. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (4)
1. A F-type power amplifier based on a hairpin type microstrip band-pass filter is characterized by at least comprising an input matching network, a grid bias network, a transistor, a drain bias network, a harmonic control network and the hairpin type microstrip band-pass filter,
the input end of the input matching network is connected with a signal source with the internal resistance of 50 ohms, and the output end of the input matching network is connected with the grid electrode of the transistor and used for matching the 50-ohm impedance to the conjugate of the optimal source impedance of the transistor;
the grid electrode bias network and the drain electrode bias network are respectively used for providing stable direct current working voltage for the grid electrode and the drain electrode of the transistor;
the input end of the harmonic control network is connected with the drain electrode of the transistor, and the output end of the harmonic control network is connected with the hairpin type microstrip band-pass filter;
the input end of the hairpin type microstrip band-pass filter is connected with the harmonic control network, and the output end of the hairpin type microstrip band-pass filter is connected with the 50-ohm load end;
the harmonic control network simplifies a harmonic matching network by adding parallel open-circuit fan-shaped microstrip lines in a drain bias network, and comprises a first microstrip line TL1, a second microstrip line TL2, a third microstrip line TL3, a fourth microstrip line TL4, a fifth microstrip line TL5 and a sixth microstrip line TL6, wherein TL1, TL2 and TL4 are series microstrip lines, and TL3, TL5 and TL6 are parallel microstrip lines; one end of a sixth microstrip line TL6 is connected with one end of a fifth microstrip line TL5, one end of a fifth microstrip line TL5 is connected with one end of a fourth microstrip line TL4 and one end of a hairpin type microstrip band-pass filter, one end of the fourth microstrip line TL4 is connected with one end of a second microstrip line TL2 and one end of a third microstrip line TL3, and the first microstrip line TL1 is connected with the drain of a transistor and one end of the second microstrip line TL 2; the first microstrip line TL1 is used as a tuning line for compensating the parasitic capacitance of the transistor; the first microstrip line TL1, the second microstrip line TL2, the fourth microstrip line TL4, the fifth microstrip line TL5 and the sixth microstrip line TL6 control second harmonic waves together; the first microstrip line TL1, the second microstrip line TL2 and the third microstrip line TL3 jointly control third harmonic, and second harmonic short circuit and third harmonic open circuit are achieved on the end face of a transistor current source;
the hairpin microstrip band-pass filter has good in-band characteristics and at least comprises a first series microstrip line TL7, a second series microstrip line TL8, a third series microstrip line TL9, a fourth series microstrip line TL10, a fifth series microstrip line TL11, a first parallel coupling microstrip line CLin1, a second parallel coupling microstrip line CLin2, a third parallel coupling microstrip line CLin3 and a fourth parallel coupling microstrip line CLin 4; the first series microstrip line TL7 is connected to a port 1 of the first parallel coupling microstrip line CLin1, the second series microstrip line TL8 is connected to a port 3 of the first parallel coupling microstrip line CLin1 and a port 1 of the second parallel coupling microstrip line CLin2, the third series microstrip line TL9 is connected to a port 3 of the second parallel coupling microstrip line CLin2 and a port 1 of the third parallel coupling microstrip line CLin3, the fourth series microstrip line TL10 is connected to a port 3 of the third parallel coupling microstrip line CLin3 and a port 1 of the fourth parallel coupling microstrip line CLin4, and the fifth series microstrip line TL11 and a port 3 of the fourth parallel coupling microstrip line CLin4 are connected to a 50-ohm load terminal.
2. The F-class power amplifier based on the hairpin microstrip band-pass filter according to claim 1, wherein the harmonic control network performs parameter tuning on a sixth microstrip line TL6, a fifth microstrip line TL5, a fourth microstrip line TL4, a second microstrip line TL2 and a first microstrip line TL1 to realize a second harmonic short circuit at a point E; the third microstrip line TL3, the second microstrip line TL2 and the first microstrip line TL1 are subjected to parameter tuning, and third harmonic open circuit is realized at the point E.
3. The class-F power amplifier of claim 1, wherein the hairpin microstrip bandpass filter has a length of 2 and 4 ports open-circuited
The length of the folded cascade parallel coupling microstrip line is halved
The hairpin structure of (a) forms a symmetrical band-pass filter network.
4. A design method of an F-type power amplifier based on a hairpin-type microstrip band-pass filter is characterized by comprising the following steps:
step S1: carrying out multiple load pulling and source pulling on the GaN HEMT CGH40010F transistor, and obtaining the optimal load impedance and the optimal source impedance of the transistor when the power is added with efficiency and the maximum output power;
step S2: performing conjugate setting according to the optimal source impedance obtained in the step S1, and performing matching operation with the 50 ohm internal resistance of the signal source in a step impedance matching mode to complete the design of an input matching circuit so that the transistor obtains a maximum power input signal;
step S3: a quarter-wavelength microstrip line is adopted to design a grid bias network and a drain bias network so as to ensure that the power amplifier has stable direct-current supply voltage;
step S4: designing a harmonic control network, effectively combining with a drain electrode bias network, and simultaneously enabling the drain electrode voltage and current waveform of the power amplifier to meet F-type conditions and the central frequency point F of a working frequency band0Characteristic impedance Z of microstrip linenFor free parameters, the line length theta of each microstrip line needs to be solvedn(ii) a The lengths of the designed microstrip lines TL6, TL5 and TL3 are respectively
Make 2f0Short circuit at point B, 3f0The open circuit is realized at the point C, and the length of the microstrip line TL2 is designed to be
Selecting the appropriate Z1And Z4The electrical lengths of the microstrip lines TL1 and TL4 may be determined, eventually to achieve 2f at point E, respectively0And 3f0Short circuit and open circuit;
step S5: designing a hairpin microstrip band-pass filter, wherein the filter can only convert 50 ohm load impedance into real impedance, and matching fundamental impedance and harmonic impedance to an optimal region through the harmonic control network of the step S4; for determining the parameters of the filter, the center frequency f is determined by a load pull technique0Obtaining the best fundamental wave impedance, and converting the best fundamental wave impedance into real impedance through a harmonic wave control network
As a designed input impedance; obtaining a low-pass prototype parameter of the three-order Chebyshev-based low-pass filter by looking up a table according to the three-order Chebyshev-based low-pass filter and the 0.1dB attenuation ripple value; calculating the characteristic impedance Z of odd-even mode of each section of coupling line0oAnd Z0e(ii) a Through Z0oAnd Z0eGiven microstrip line substrate parameter (dielectric relative dielectric)Constant epsilonrAnd the dielectric thickness d), solving the width W of the microstrip line and the microstrip line coupling distance S; finally, the lengths are
The parallel coupling microstrip line is folded to reduce the length by half
To reduce the overall size of the filter;
step S6: and building an overall circuit structure by combining the steps S1, S2, S3, S4 and S5, and performing circuit simulation and optimization by using ADS software to ensure that the optimal performance is realized.
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