CN116043224B - Etching method of high-precision aluminum nitride aluminum-coated substrate - Google Patents
Etching method of high-precision aluminum nitride aluminum-coated substrate Download PDFInfo
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- CN116043224B CN116043224B CN202310103071.3A CN202310103071A CN116043224B CN 116043224 B CN116043224 B CN 116043224B CN 202310103071 A CN202310103071 A CN 202310103071A CN 116043224 B CN116043224 B CN 116043224B
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- 238000005530 etching Methods 0.000 title claims abstract description 128
- 239000000758 substrate Substances 0.000 title claims abstract description 82
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 38
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 38
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000002791 soaking Methods 0.000 claims abstract description 21
- 239000002253 acid Substances 0.000 claims abstract description 18
- 239000000919 ceramic Substances 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 claims abstract description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 20
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 238000004140 cleaning Methods 0.000 claims description 17
- 230000002378 acidificating effect Effects 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 239000003814 drug Substances 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 23
- 239000013078 crystal Substances 0.000 description 8
- 238000007747 plating Methods 0.000 description 5
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007688 edging Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4878—Mechanical treatment, e.g. deforming
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
The invention discloses an etching method of a high-precision aluminum nitride aluminum-coated substrate, which relates to the field of ceramic substrate preparation and aims at solving the problem that a substrate pattern is easy to fail in insulation, and the technical scheme is as follows: step one, preparing a graph: preparing an etched pattern, and developing an aluminum nitride-coated mother board substrate to obtain a pattern edge gap to be etched; step two, ultrasonic cavitation etching: soaking etching in acid etching liquid under ultrasonic vibration to form pattern edge gap; step three, graphic ink edge covering printing: graphic printing, namely printing photosensitive ink on a substrate in an aligned mode according to the graphic screen diagram; step four, horizontal etching: and (3) taking the substrate in the step III, placing the substrate under a horizontal etching line, and etching by using an acid etching solution until the substrate is a ceramic substrate, thereby finishing the precise etching of the pattern. The etching method of the high-precision aluminum nitride coated aluminum substrate can obtain a high etching factor and a smooth etching pattern profile.
Description
Technical Field
The invention relates to the field of ceramic substrate processing, in particular to an etching method of a high-precision aluminum nitride aluminum-coated substrate.
Background
The aluminum nitride aluminum-coated substrate is mainly applied to a power semiconductor IGBT device by a packaging lining plate, and the pattern surface of the aluminum nitride aluminum-coated substrate is aluminum and has a certain pattern, so that the effects of carrying current, insulating, radiating and the like are mainly achieved. The aluminum surface is in a processing rolling state in the traditional aluminum etching, the crystal grains of the aluminum surface have certain surface orientation texture characteristics, the etching process is fast, the precision is high, and the graph preparation of the aluminum surface can be completed by adopting the traditional horizontal etching line.
The aluminum nitride aluminum-coated substrate is generally prepared by adopting a melt liquid phase bonding method because of the particularity of a forming bonding method, the aluminum surface is in an as-cast state, crystal grains on the aluminum surface are unevenly distributed because of different cooling speeds of the aluminum surface, the surface has no obvious texture characteristics, the crystal grains on the surface are in a coarse crystal and fine equiaxed crystal staggered state, and in the horizontal etching line etching process, the crystal grain size, the inside of the crystal grains and the crystal grain boundary represent different etching speeds, so that the edge of a pattern is serrated in the etching process, and the pattern precision is low. The etching factor is small, so that nickel penetration in the subsequent surface plating process is easy to cause insulation failure between substrate patterns.
Therefore, development of a high-precision aluminum nitride aluminum-coated substrate etching method is needed.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide a method for etching an aluminum nitride coated aluminum substrate with high precision, so as to solve the problems in the background, effectively control the etching precision, obtain high etching factors and smooth etching pattern contours.
The technical aim of the invention is realized by the following technical scheme: the etching method of the high-precision aluminum nitride coated aluminum substrate is characterized by comprising the following steps of:
step one, preparing a graph:
preparing an etched pattern, namely taking an aluminum nitride aluminum-coated mother board substrate, performing pretreatment cleaning, and then performing film pasting, exposure and development to obtain a pattern edge gap to be etched;
step two, ultrasonic cavitation etching:
soaking the first substrate in acid etching liquid under ultrasonic vibration to form pattern edge gaps, and removing the film for later use;
step three, graphic ink edge covering printing:
printing a pattern on the second substrate, printing photosensitive ink on the substrate according to the pattern of the pattern mesh block, covering the surface of the pattern with the ink, overflowing the ink into the gap between the edges of the pattern, drying, exposing, and developing to realize pattern edge covering for later use;
step four, horizontal etching:
taking the substrate in the third step, placing the substrate under a horizontal etching line for etching by an acidic etching solution, wherein the etching speed is 0.5-1.2m/min, and the up-down spraying pressure is 2-2.5Kg/cm 2 Etching to the ceramic substrate, and alkaline film stripping and cleaning to finish the precise etching of the pattern.
The invention is further provided with: the thickness of the aluminum layer of the aluminum nitride aluminum-coated substrate is 0.2-0.4mm.
The invention is further provided with: the pretreatment and cleaning in the first step are sequentially carried out by adopting the concentration of sodium hydroxide solution of 50-100g/L, the soaking time is 30-60s, and HNO of 20-50g/L is adopted 3 Soaking in solution for 20-45s, HNO 3 Concentrated nitric acid at a concentration of 68%.
The invention is further provided with: in the second step, the acid etching solution is prepared from 300-500g/L FeCl 3 200-400g/L H 3 PO 4 80-120g/L of HCl and 4-6g/L of H3BO3, wherein the HCl is concentrated hydrochloric acid with concentration of 37%.
The invention is further provided with: the soaking type etching time is 20-40s and the temperature is 45-55 ℃.
The invention is further provided with: the volume of the liquid medicine tank of the etching liquid is 50-80L.
The invention is further provided with: in the third step, the ink is acid-resistant photosensitive ink; baking in a hot air oven at 150deg.C for 45-75min.
The invention is further provided with: the gap size obtained in the first step is 0.1-0.2mm.
The invention is further provided with: in the second step, the ultrasonic power is 1.5-2.5Kw, and the frequency is 35-60KHz.
In summary, the invention has the following beneficial effects: according to the invention, ultrasonic pattern gap pre-etching and ink filling are carried out on the aluminum nitride coated substrate, so that pattern edge wrapping protection is realized, and after horizontal line etching, the etching precision can be obviously and effectively controlled, and a high etching factor and a smooth etched pattern outline are obtained.
Drawings
FIG. 1 is a schematic diagram showing a substrate change during etching process according to the present invention.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and examples.
An etching method of a high-precision aluminum nitride coated aluminum substrate comprises the following steps:
step one, preparing a graph:
preparing an etched pattern, namely taking an aluminum nitride aluminum-coated mother board substrate, performing pretreatment cleaning, and then performing film pasting, exposure and development to obtain a pattern edge gap to be etched;
step two, ultrasonic cavitation etching:
soaking the first substrate in acid etching solution under ultrasonic vibration condition, wherein the ultrasonic power is 1.5-2.5Kw, the frequency is 35-60KHz, forming pattern edge gap after etching, and the obtained gap size is 0.1-0.2mm, and removing film for use;
step three, graphic ink edge covering printing:
printing a pattern on the second substrate, printing photosensitive ink on the substrate according to the pattern of the pattern mesh block, covering the surface of the pattern with the ink, overflowing the ink into the gap between the edges of the pattern, drying, exposing, and developing to realize pattern edge covering for later use;
step four, horizontal etching:
taking the substrate in the third step, placing the substrate under a horizontal etching line for etching by an acidic etching solution, wherein the etching speed is 0.5-1.2m/min, and the up-down spraying pressure is 2-2.5Kg/cm 2 Etching to the ceramic substrate, and alkaline film stripping and cleaning to finish the precise etching of the pattern.
Wherein the thickness of the aluminum layer of the aluminum nitride aluminum-coated substrate is 0.2-0.4mm.
The pretreatment and cleaning in the first step are sequentially carried out by adopting the concentration of sodium hydroxide solution of 50-100g/L, the soaking time is 30-60s, and HNO of 20-50g/L is adopted 3 Soaking in solution for 20-45s, HNO 3 Concentrated nitric acid at a concentration of 68%.
In the second step, the acid etching solution is prepared from 300-500g/L FeCl 3 200-400g/L H 3 PO 4 80-120g/L of HCl and 4-6g/L of H3BO3, wherein the HCl is concentrated hydrochloric acid with concentration of 37%; the soaking type etching time is 20-40s and the temperature is 45-55 ℃; and the volume of the liquid medicine tank of the etching liquid is 50-80L.
In the third step, the ink is acid-resistant photosensitive ink; baking in a hot air oven at 150deg.C for 45-75min.
Embodiment one:
step one, graphic preparation
Preparing an etched pattern, namely cleaning an aluminum nitride-coated mother board substrate through pretreatment, and then performing film pasting, exposure and development to obtain a pattern edge gap to be etched, wherein the gap size is 0.1mm;
step two, ultrasonic cavitation etching
The method comprises the steps of taking a substrate in the step one, placing the substrate in an acid etching solution under the ultrasonic vibration condition for soaking etching, wherein the ultrasonic power is 1.5Kw, the frequency is 45KHz, the volume of a liquid medicine tank of the etching solution is 50L, forming a pattern edge gap after etching, and removing a film for later use;
step three, graphic ink edge-covering printing
Printing a pattern on the second substrate, printing photosensitive ink on the substrate according to the pattern of the pattern mesh block, covering the surface of the pattern with the ink, overflowing the ink into the gap between the edges of the pattern, drying, exposing, and developing to realize pattern edge covering for later use;
step four, horizontal etching
Taking the substrate in the step three, placing the substrate under a horizontal etching line to carry out etching by an acidic etching solution, wherein the etching speed is 0.8m/min, and the up-down spraying pressure is 2.0Kg/cm 2 Etching to the ceramic substrate, and performing alkaline film stripping and cleaning to finish pattern precision etching;
wherein, the thickness of the aluminum layer of the aluminum nitride coated aluminum substrate is 0.2mm;
the pretreatment cleaning in the first step sequentially adopts 50g/L of sodium hydroxide solution, the soaking time is 30s, and the mass fraction of HNO is 30g/L 3 Soaking in solution for 30s, HNO 3 68% concentrated nitric acid;
in the second step, the acid etching solution is prepared from 300g/LFECl 3 、400g/LH 3 PO 4 82g/L of HCl and 4g/L of H3BO3, wherein the HCl is concentrated hydrochloric acid with the concentration of 37%;
the soaking etching time in the second step is 30s at 45 ℃;
in the third step, the ink is acid-resistant photosensitive ink; baking in a hot air oven at 150 ℃ for 75min.
Embodiment two:
step one, graphic preparation
Preparing an etched pattern, namely cleaning an aluminum nitride-coated mother board substrate through pretreatment, and then performing film pasting, exposure and development to obtain a pattern edge gap to be etched, wherein the gap size is 0.15mm;
step two, ultrasonic cavitation etching
The method comprises the steps of taking a substrate in the step one, placing the substrate in an acidic etching solution under the ultrasonic vibration condition for soaking etching, wherein the ultrasonic power is 2.5Kw, the frequency is 35KHz, the volume of a liquid medicine tank of the etching solution is 60L, forming a pattern edge gap after etching, and removing a film for later use;
step three, graphic ink edge-covering printing
Printing a pattern on the second substrate, printing photosensitive ink on the substrate according to the pattern of the pattern mesh block, covering the surface of the pattern with the ink, overflowing the ink into the gap between the edges of the pattern, drying, exposing, and developing to realize pattern edge covering for later use;
step four, horizontal etching
Taking the substrate in the step three, placing the substrate under a horizontal etching line to carry out etching by an acidic etching solution, wherein the etching speed is 1.0m/min, and the up-down spraying pressure is 2.5Kg/cm 2 Etching to the ceramic substrate, and performing alkaline film stripping and cleaning to finish pattern precision etching;
wherein the thickness of the aluminum layer of the aluminum nitride coated aluminum substrate is 0.2mm;
the pretreatment cleaning in the first step sequentially adopts 50g/L of sodium hydroxide solution, the soaking time is 60s, and 50g/L of HNO (HNO) in parts by mass is adopted 3 Soaking in solution for 30s, HNO 3 Concentrated nitric acid at 68% concentration;
the acid etching solution in the second step is composed of 300g/L FeCl 3 400g/L H 3 PO 4 82g/L of HCl and 4g/L of H3BO3, wherein the HCl is concentrated hydrochloric acid with the concentration of 37%;
in the second step, the soaking etching time is 30s and the temperature is 45 ℃;
in the third step, the ink is acid-resistant photosensitive ink; baking in a hot air oven at 150 ℃ for 75min.
Comparative example one:
a high-precision aluminum nitride coated aluminum substrate etching method, namely, directly printing by adopting the same pattern and carrying out the traditional horizontal etching process, comprises the following steps:
step one, graphic preparation
Preparing an etched pattern, namely cleaning an aluminum nitride aluminum-coated mother board substrate by using 50g/L NaOH aqueous solution for 30s, and then performing film pasting, exposure and development to obtain the pattern to be etched, wherein the size of the aluminum nitride mother board is 95 multiplied by 120mm, and the thickness of an aluminum layer is 0.2mm;
step two, horizontal etching
Taking a substrate, placing the substrate under a horizontal etching line for acid etching, wherein the etching speed is 0.8m/min, and the up-down spraying pressure is 2.2Kg/cm 2 Etching to the ceramic substrate, and performing alkaline film stripping and cleaning to finish pattern precision etching; the acid etching solution is composed of 500.0g/L FeCl 3 200.0g/L H 3 PO 4 80.0g/L HCl and 4.0g/L H 3 BO 3 Composition;
the substrates prepared in example one, example two and comparative example one were compared:
the etching factor is calculated by etching factor = etching metal layer thickness/[ (pattern top line width-pattern bottom line width)/2 ]
In the subsequent surface plating treatment process, the etching factor is small, so that the plating layer is easy to transversely grow at the line spacing, the insulating performance among the substrate pattern islands is affected, and the failure is caused.
In contrast, example 1 has high-precision pattern size, large etching factor, smooth edge, difficult diffusion plating, comparative sample, low pattern precision, small etching factor, even stepped edge saw teeth, and easy diffusion plating.
| Project | Graphic accuracy | Etching factor | Edge condition | Whether or not to be easy to be infiltrated with |
| Example 1 | High height | 4.1 | Smooth and glossy | Whether or not |
| Example 2 | High height | 3.8 | Smooth and glossy | Whether or not |
| Comparative example 1 | Low and low | 1.1 | Saw tooth | Is that |
The principle is explained below with reference to fig. 1, an aluminum nitride aluminum-coated substrate is firstly subjected to pattern preparation, film pasting, exposure and development to obtain an etched pattern edge gap, namely an S1 part in the figure, then ultrasonic cavitation etching is performed, the etched pattern edge gap is obtained at the moment, namely an S2 part in the figure, pattern ink edging printing is performed, so that ink overflows into the pattern edge gap, and pattern edging is realized, namely an S3 part in the figure; finally, horizontally etching until the ceramic substrate is etched, wherein the state of the ceramic substrate is shown as an S4 part in the figure; in this way, the pattern is etched by ultrasonic cavitation etching, and then the accuracy of the pattern can be ensured because the whole second etching time is relatively short, but the pattern is not completely etched through, namely the pattern is not etched to the ceramic substrate, the third step is added on the basis, the ink is coated, and when the horizontal etching is carried out after the ink is coated, the etching factor and the etching accuracy are obviously improved, or else the time factor and the time accuracy are poor.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above examples, and all technical solutions belonging to the concept of the present invention belong to the protection scope of the present invention. It should be noted that modifications and adaptations to the present invention may occur to one skilled in the art without departing from the principles of the present invention and are intended to be within the scope of the present invention.
Claims (5)
1. The etching method of the high-precision aluminum nitride coated aluminum substrate is characterized by comprising the following steps of:
step one, preparing a graph:
preparing an etched pattern, namely taking an aluminum nitride aluminum-coated mother board substrate, performing pretreatment cleaning, and then performing film pasting, exposure and development to obtain a pattern edge gap to be etched, wherein the gap size is 0.1-0.2mm;
step two, ultrasonic cavitation etching:
soaking the first substrate in acid etching liquid under ultrasonic vibration to form pattern edge gap, stripping film to reserve, wherein the acid etching liquid consists of 300-500g/L FeCl 3 200-400g/L H 3 PO 4 80-120g/L HCl and 4-6g/L H 3 B0 3 The composition is concentrated hydrochloric acid with 37 percent concentration, the soaking etching time is 20-40s, the temperature is 45-55 ℃, the ultrasonic power of ultrasonic vibration is 1.5-2.5kW, and the frequency is 35-60kHz;
step three, graphic ink edge covering printing:
printing a pattern on the second substrate, printing photosensitive ink on the substrate in a pattern mesh pattern alignment manner, covering the surface of the pattern with the ink, overflowing the ink into a pattern edge gap, drying, exposing and developing to realize pattern edge wrapping for later use, wherein the ink is acid-resistant photosensitive ink;
step four, horizontal etching:
taking the substrate in the step three, placing the substrate under a horizontal etching line for etching by an acidic etching solution, wherein the etching speed is 0.5-1.2m/min, and the up-down spraying pressure is 2-2.5kg/cm 2 Etching to the ceramic substrate, and alkaline film stripping and cleaning to finish the precise etching of the pattern.
2. The method for etching a high-precision aluminum nitride coated substrate according to claim 1, wherein: the thickness of the aluminum layer of the aluminum nitride aluminum-coated substrate is 0.2-0.4mm.
3. The method for etching a high-precision aluminum nitride coated substrate according to claim 1, wherein: the pretreatment and cleaning in the first step are sequentially soaking for 30-60s by adopting 50-100g/L sodium hydroxide solution, and adopting 20-50g/L HNO 3 Soaking in solution for 20-45s, HNO 3 Concentrated nitric acid at a concentration of 68%.
4. The method for etching a high-precision aluminum nitride coated substrate according to claim 1, wherein: the volume of the liquid medicine tank of the etching liquid is 50-80L.
5. The method for etching a high-precision aluminum nitride coated substrate according to claim 1, wherein: and step three, baking in a hot air oven at 150 ℃ for 45-75min.
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