CN116031755B - Laser epitaxial structure with hole acceleration structure and laser - Google Patents
Laser epitaxial structure with hole acceleration structure and laser Download PDFInfo
- Publication number
- CN116031755B CN116031755B CN202310118063.6A CN202310118063A CN116031755B CN 116031755 B CN116031755 B CN 116031755B CN 202310118063 A CN202310118063 A CN 202310118063A CN 116031755 B CN116031755 B CN 116031755B
- Authority
- CN
- China
- Prior art keywords
- layer
- type
- gan
- hole acceleration
- electron blocking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a laser epitaxial structure with a hole acceleration structure and a laser. The laser epitaxial structure comprises an n-type limiting layer, a first waveguide layer, a light emitting layer, a second waveguide layer, a p-type electron blocking layer, a p-type limiting layer and a p-type ohmic contact layer which are sequentially arranged along a specified direction; and the epitaxial structure further comprises a p-type hole acceleration layer, wherein the p-type hole acceleration layer is arranged between the second waveguide layer and the p-type limiting layer; an acceptor impurity concentration within the p-type hole acceleration layer is lower than an acceptor impurity concentration within either of the p-type confinement layer and the p-type electron blocking layer; and, the potential barrier of the p-type hole acceleration layer is lower than the potential barrier of either one of the p-type confinement layer and the p-type electron blocking layer. The p-type GaN hole acceleration layer can accelerate the migration rate of holes and push more holes to enter the quantum well luminescent layer.
Description
Technical Field
The invention relates to a laser, in particular to a laser epitaxial structure with a hole acceleration structure and a laser, and belongs to the technical field of semiconductors.
Background
Gallium nitride-based lasers are a current research hotspot, and as a new generation of optoelectronic devices, they are widely focused and applied in the fields of novel display, optical communication, illumination, etc. Gallium nitride lasers need to operate at high current densities, and have very high demands on the crystal quality of the material. Unlike other gallium nitride devices, such as LEDs, the sensitivity to crystal quality is not high, but for lasers poor material quality will directly affect the lifetime and output power of the laser. Existing epitaxial structures and methods still far from reach the lifetime and performance of other lasers (GaAs based).
When the laser works, electrons and holes are combined in the light-emitting layer, but the current density in the device is very high, a large number of electrons form high-speed flow and high-concentration surge to the light-emitting layer, and when the electrons and the holes are combined, a large part of electrons overflow and surge to the P-type region, so that electron leakage is caused, and the service life of the GaN-based laser is prolonged.
Disclosure of Invention
The invention mainly aims to provide a laser epitaxial structure with a hole acceleration structure and a laser, so that the defects in the prior art are overcome.
In order to achieve the purpose of the invention, the technical scheme adopted by the invention comprises the following steps:
the invention provides a laser epitaxial structure with a hole acceleration structure, which comprises an n-type limiting layer, a first waveguide layer, a light emitting layer, a second waveguide layer, a p-type electron blocking layer, a p-type limiting layer and a p-type ohmic contact layer which are sequentially arranged along a designated direction; and the epitaxial structure further comprises a p-type hole acceleration layer, wherein the p-type hole acceleration layer is arranged between the second waveguide layer and the p-type limiting layer; an acceptor impurity concentration within the p-type hole acceleration layer is lower than an acceptor impurity concentration within either of the p-type confinement layer and the p-type electron blocking layer; and, the potential barrier of the p-type hole acceleration layer is lower than the potential barrier of either one of the p-type confinement layer and the p-type electron blocking layer.
Further, the p-type hole acceleration layer comprises a first p-type hole acceleration layer and/or a second p-type hole acceleration layer, wherein the first p-type hole acceleration layer is arranged between the p-type electron blocking layer and the p-type limiting layer, and the second p-type hole acceleration layer is arranged between the p-type electron blocking layer and the second waveguide layer.
Further, a first polarization field is formed between the first p-type hole acceleration layer and the p-type limiting layer, a second polarization field is formed between the first p-type hole acceleration layer and the p-type electron blocking layer, the vector directions of the first polarization field and the second polarization field are opposite, the intensity of the first polarization field is larger than that of the second polarization field, and holes moving from the p-type limiting layer to the light emitting layer can be accelerated by the first polarization field.
Further, a third polarization field is formed between the second p-type hole acceleration layer and the p-type electron blocking layer, and holes moving from the p-type limiting layer and the p-type electron blocking layer to the light emitting layer can be accelerated by the third polarization field.
Further, the p-type electron blocking layer and the p-type limiting layer are both made of III-nitride materials containing Al, and the Al content in the p-type limiting layer is larger than that in the p-type electron blocking layer.
Further, the materials of the first waveguide layer and the second waveguide layer comprise InGaN, and the materials of the p-type electron blocking layer and the p-type limiting layer comprise AlGaN.
Further, the acceptor impurity concentration in the p-type electron blocking layer is 1E20-1E21cm -3 Acceptor impurity concentration in the p-type confinement layer is 1E19-1E20cm -3 。
Further, the first p-type hole acceleration layer and the second p-type hole acceleration layer are both p-GaN layers lightly doped with Mg.
Further, acceptor impurity concentrations of the first and second p-type hole acceleration layers are 1E16cm -3 -1E17cm -3 。
Further, the thicknesses of the first p-type hole acceleration layer and the second p-type hole acceleration layer are 5-50nm.
In some more specific embodiments, the laser epitaxial structure with hole acceleration structure comprises: an n-GaN substrate, an n-AlGaN confinement layer, a first InGaN waveguide layer, an InGaN/GaN quantum well light-emitting layer, a second InGaN waveguide layer, a p-AlGaN electron blocking layer, an up-GaN hole acceleration layer, a p-AlGaN confinement layer, and a p-GaN ohmic contact layer are sequentially stacked,
or an n-GaN substrate, an n-AlGaN limiting layer, a first InGaN waveguide layer, an InGaN/GaN quantum well light-emitting layer, a second InGaN waveguide layer, an up-GaN hole acceleration layer, a p-AlGaN electron blocking layer, a p-AlGaN limiting layer and a p-GaN ohmic contact layer which are sequentially stacked;
or an n-GaN substrate, an n-AlGaN limiting layer, a first InGaN waveguide layer, an InGaN/GaN quantum well light-emitting layer, a second InGaN waveguide layer, an up-GaN hole acceleration layer, a p-AlGaN electron blocking layer, an up-GaN hole acceleration layer, a p-AlGaN limiting layer and a p-GaN ohmic contact layer which are sequentially stacked.
The invention also provides a laser, which comprises the laser epitaxial structure with the hole acceleration structure.
Compared with the prior art, the invention has the advantages that:
1) The p-type GaN hole accelerating layer in the laser epitaxial structure with the hole accelerating structure can accelerate the migration rate of holes and push more holes to enter the light emitting layer, so that the probability of radiation recombination of electrons and holes is improved, and the problem of overhigh voltage caused by blocking of the p-type electron blocking layer on the holes is solved;
2) The laser epitaxial structure with the hole acceleration structure provided by the invention has the advantages of simple manufacturing process and good process repeatability, is beneficial to improving the luminous efficiency of a laser, reducing the threshold voltage, prolonging the service life of the laser and the like, and is suitable for industrial production.
Drawings
Fig. 1 is a schematic structural view of a GaN-based laser epitaxial structure in comparative example 1;
fig. 2 is a schematic diagram of the epitaxial structure of a GaN-based laser in comparative example 1;
FIG. 3 is a schematic diagram of a GaN-based laser epitaxial structure with hole acceleration structure according to an exemplary embodiment of the invention;
fig. 4 is a schematic diagram of a GaN-based laser epitaxial structure with hole acceleration structure according to an exemplary embodiment of the present invention.
Detailed Description
In view of the shortcomings in the prior art, the inventor of the present invention has long studied and practiced in a large number of ways to propose the technical scheme of the present invention. The technical solution, implementation process and principle thereof will be further explained with reference to the drawings and specific embodiments, and unless otherwise specified, parameters such as thickness of each structural layer in the GaN-based laser epitaxial structure in the embodiments of the present invention may be selected according to specific situations, and are not specifically limited herein.
According to the GaN-based laser epitaxial structure with the hole acceleration structure, the p-type GaN hole acceleration layer (i.e. the up-type GaN hole acceleration layer) lightly doped with Mg is inserted between the p-type AlGaN electron blocking layer and the p-type AlGaN limiting layer, so that the injection efficiency of holes penetrating the p-type AlGaN electron blocking layer and being injected into the light-emitting layer is improved through the p-type GaN hole acceleration layer, the number of holes reaching the light-emitting layer is improved, and the carrier distribution state of 'electrons are strong and weak' in the laser is balanced. The invention has the advantages of simple operation and good process repeatability, is beneficial to improving the luminous efficiency of laser, reducing the threshold voltage, prolonging the service life of the laser and the like, and is suitable for industrial production.
The p-type GaN hole accelerating layer in the GaN-based laser epitaxial structure with the hole accelerating structure can accelerate the migration rate of holes, promote more holes to enter the quantum well luminescent layer, improve the probability of radiation recombination of the holes and electrons, and reduce the problem of overhigh voltage caused by blocking of the p-type AlGaN electron blocking layer on the holes.
The GaN-based laser epitaxial structure with the hole acceleration structure is mainly characterized in that the performance of the whole device is improved by inserting the p-GaN hole acceleration layer structure.
Referring to fig. 3, an epitaxial structure of a GaN-based blue laser includes an n-type confinement layer (i.e., a lower confinement layer) 20, a first waveguide layer (i.e., a lower waveguide layer) 30, a light emitting layer (also referred to as a light emitting active region, an active layer, etc.) 40, a second waveguide layer (i.e., an upper waveguide layer) 50, a p-type Electron Blocking Layer (EBL) 60, a p-type confinement layer (i.e., an upper confinement layer) 80, and a p-type ohmic contact layer 90, and a p-type Hole Acceleration Layer (HAL) disposed between the second waveguide layer 50 and the p-type confinement layer 80, which are sequentially stacked.
Specifically, the epitaxial structure may include one or two p-type hole acceleration layers, when only one p-type hole acceleration layer is included, the p-type hole acceleration layer may be disposed between the p-type electron blocking layer 60 and the p-type confinement layer 80 or between the second waveguide layer 50 and the p-type electron blocking layer 60, and when two p-type hole acceleration layers are included, one p-type hole acceleration layer is disposed between the p-type electron blocking layer 60 and the p-type confinement layer 80, the other p-type hole acceleration layer may be disposed between the second waveguide layer 50 and the p-type electron blocking layer 60, and the structure, material, and characteristic parameters of the two p-type hole acceleration layers may be the same.
Specifically, fig. 3 shows a case where a p-type hole acceleration layer 70 is provided between the p-type electron blocking layer 60 and the p-type confinement layer 80.
Specifically, the substrate 10 is an n-GaN homogeneous substrate or an n-GaN template with a heterogeneous substrate, the n-type confinement layer 20 is a si-doped n-AlGaN layer, and the Al component content in the n-AlGaN layer is 8 at%; the first waveguide layer 30 is an undoped InGaN layer, the thickness of the undoped InGaN layer is 60nm, and the in component content is 3at%;
the light-emitting layer 40 is an InGaN/GaN quantum well light-emitting layer, which includes 2 periods of InGaN well layers and GaN barrier layers alternately stacked on each other, wherein the In component content of the InGaN well layers is 15 at%, the thickness of the InGaN well layers is 3nm, and the thickness of the GaN barrier layers is 7nm;
the second waveguide layer 50 is an undoped InGaN layer having a thickness of 60nm and an in component content of 3at%; the p-type electron blocking layer 60 and the p-type limiting layer 80 are both Mg-doped p-AlGaN layers, and the ohmic contact layer 90 is a Mg-highly doped p-GaN layer, wherein the thickness of the p-type electron blocking layer 60 is 25nm, and the doping concentration of Mg is 1E20-1E21cm -3 The thickness of the p-type limiting layer 80 is 850nm, and the doping concentration of Mg is 1E19-1E20cm -3 The thickness of the p-type ohmic contact layer 90 is 10nm, the first p-type hole acceleration layer 70 is a weak p-type p-GaN layer (i.e. up-GaN layer) lightly doped with Mg, and the doping concentration of Mg in the p-GaN layer is 1E16cm -3 -1E17cm -3 The thickness is 5-50nm.
Specifically, minority carriers-holes are mainly generated in the p-type electron blocking layer, the p-type confinement layer and the p-type ohmic contact layer, after a large number of holes are generated in the p-type confinement layer 80 and the highly doped (heavily doped) p-type ohmic contact layer 90, a large number of holes can be generated due to the heavily doped Mg, but because the concentration is inversely proportional to the mobility, the mobility of the holes is very low, if the holes directly enter the p-type electron blocking layer 60 for blocking electrons, the holes are blocked due to the high barrier effect of the same high Al component, the migration speed is reduced again, so that the number of holes passing through the p-type electron blocking layer 60 and entering the light emitting layer 40 is smaller, and the recombination efficiency is lower.
For the fundamental problem of "electron strong and hole weak" in the GaN-based laser, referring to fig. 4, the present invention inserts a p-GaN layer lightly doped with Mg between the second waveguide layer 50 and the p-type confinement layer 80 as a p-type hole acceleration layer, and before the holes enter the p-type electron blocking layer 60, the situation changes because the holes first pass through the p-type hole acceleration layer, firstly, because Mg in the p-GaN layer is lightly doped, the concentration of carriers (holes) in the p-GaN layer is very low, as described above, the mobility of holes in the p-GaN layer is very high, and a large number of holes from the p-type ohmic contact layer 90 and the p-type confinement layer 80 can be accelerated under the driving of the hole concentration difference; secondly, since GaN as a p-type hole acceleration layer has smaller Mg-H bond binding (the wider the forbidden bandwidth, the stronger the ability to release binding), holes can be freely diffused therein, so that the uniformity distribution of holes is enhanced to some extent; then, gaN is lower than the barrier of AlGaN, and a polarization field is easily generated at the AlGaN/GaN interface, which contributes to the tunneling effect of holes at the interface, and the holes moving from the p-type confinement layer to the light emitting layer can be accelerated by the polarization field, so that the holes are not blocked by the p-type electron blocking layer, and a larger number of holes can enter the light emitting layer, so that the probability of recombination of the holes and electrons is increased, and the probability of radiative recombination of the electrons and the holes is improved.
It should be noted that, based on the same principle, a polarizing field in the opposite direction is formed at the interface between the p-type hole acceleration layer and the p-type electron blocking layer, but since the Al content in the p-type confinement layer is greater than the Al content in the p-type electron blocking layer, the strength of the first polarizing field formed between the p-type confinement layer and the p-type hole acceleration layer is greater than the strength of the second polarizing field formed between the p-type electron blocking layer and the p-type hole acceleration layer, and therefore, although the second polarizing field causes a certain resistance to holes moving toward the light emitting layer, the effect of accelerating holes moving from the p-type confinement layer to the light emitting layer can be achieved as a whole.
It will be appreciated that when the p-type hole acceleration layer is disposed between the p-type electron blocking layer and the second waveguide layer, a third polarization field is formed between the p-type electron blocking layer and the p-type hole acceleration layer, and the third polarization field can accelerate holes moving from the p-type confinement layer and the p-type electron blocking layer to the light emitting layer, so that more holes can enter the light emitting layer, and it is noted that the barrier difference between GaN and InGaN is small, the spontaneous polarization effect is weak, and the field strength is small, so that the polarization field is hardly generated at the InGaN/GaN interface.
The GaN-based laser epitaxial structure with the hole acceleration structure is mainly characterized in that the performance of the whole device is improved by inserting the p-GaN hole acceleration layer structure. Specifically, the p-type GaN hole acceleration layer in the GaN-based laser epitaxial structure with the hole acceleration structure can accelerate the migration rate of holes, promote more holes to enter the quantum well luminescent layer, and improve the probability of radiative recombination of the holes and electrons.
The technical scheme, the implementation process and principle of the technical scheme and the implementation process and principle of the technical scheme are further explained with reference to the attached drawings, specific embodiments and comparative examples.
Comparative example 1
Referring to fig. 1, an epitaxial structure of a GaN-based blue laser includes an n-AlGaN confinement layer, a first InGaN waveguide layer, an InGaN/GaN quantum well light emitting layer, a second InGaN waveguide layer, a p-AlGaN electron blocking layer, a p-AlGaN confinement layer, and a p-GaN ohmic contact layer sequentially stacked on an n-GaN single crystal substrate 10.
In this embodiment, the n-AlGaN confinement layer is si doped, the Al component content in the n-AlGaN confinement layer is 8 at%, and the thickness of the n-AlGaN confinement layer is 850nm; the first InGaN waveguide layer is undoped, the thickness of the first InGaN waveguide layer is 60nm, and the in component content is 3at%; the InGaN/GaN quantum well light-emitting layer comprises 2 periods of InGaN well layers and GaN barrier layers which are alternately stacked, wherein the In component content of the InGaN well layers is 15 and at%, the thickness of the InGaN well layers is 3nm, and the thickness of the GaN barrier layers is 7nm; the second InGaN waveguide layer is undoped, the thickness of the second InGaN waveguide layer is 60nm, and the in component content is 3at%; the p-AlGaN electron blocking layer, the p-AlGaN limiting layer and the p-GaN ohmic contact layer are all doped with Mg, wherein the thickness of the p-AlGaN electron blocking layer is 25nm, and the doping concentration of Mg is 5E20cm -3 Thickness of the p-AlGaN confinement layerThe degree is 850nm, and the thickness of the p-GaN ohmic contact layer is 10nm.
Referring to fig. 2, under the driving effect of high current density, a large amount of electrons with small effective mass and high mobility are flushed from the bottom of the conduction band to the quantum well light emitting layer, while holes with large effective mass and low mobility are flushed from the top of the valence band to the quantum well light emitting layer, and due to the mismatching of the behaviors of the electrons and the holes, the electrons are not fully recombined in the quantum well light emitting layer, a large amount of electrons cross the quantum well light emitting layer to reach the p-type electron blocking layer and annihilate therein, and the holes are blocked by the p-type electron blocking layer in the advancing process, so that the holes which reach the quantum well light emitting layer to be recombined are fewer, and further the radiation recombination efficiency is reduced.
The epitaxial structure of the GaN-based blue laser in comparative example 1 was processed to form a GaN-based blue laser using a chip process and is denoted as sample a.
Example 1
Referring to fig. 3, an epitaxial structure of a GaN-based blue laser includes an n-AlGaN confinement layer, a first InGaN waveguide layer, an InGaN/GaN quantum well light emitting layer, a second InGaN waveguide layer, a p-AlGaN electron blocking layer, a p-GaN hole acceleration layer, a p-AlGaN confinement layer, and a p-GaN ohmic contact layer sequentially stacked on an n-GaN single crystal substrate 10.
In this embodiment, the n-AlGaN confinement layer is si doped, the Al component content in the n-AlGaN confinement layer is 8 at%, and the thickness of the n-AlGaN confinement layer is 850nm; the first InGaN waveguide layer is undoped, the thickness of the first InGaN waveguide layer is 60nm, and the in component content is 3at%;
the InGaN/GaN quantum well light-emitting layer comprises 2 periods of InGaN well layers and GaN barrier layers which are alternately stacked, wherein the In component content of the InGaN well layers is 15 and at%, the thickness of the InGaN well layers is 3nm, and the thickness of the GaN barrier layers is 7nm; the second InGaN waveguide layer is undoped, the thickness of the second InGaN waveguide layer is 60nm, and the in component content is 3at%;
the p-AlGaN electron blocking layer, the p-AlGaN confinement layer and the p-GaN ohmic contact layer are all Mg-doped, wherein the p-AlGaN electronsThe thickness of the barrier layer is 25nm, and the doping concentration of Mg is 5E20cm -3 The thickness of the p-AlGaN limiting layer is 850nm, and the doping concentration of Mg is 5E19cm -3 The thickness of the p-GaN ohmic contact layer is 10nm, the p-GaN hole acceleration layer is of weak p type formed by lightly doping Mg, and the doping concentration of Mg in the p-GaN hole acceleration layer is 5E16cm -3 The thickness was 30nm.
The epitaxial structure of the GaN-based blue laser in example 1 was fabricated to form a GaN-based blue laser using the same chip process as in comparative example 1 and denoted as sample B.
Example 2
The structure of an epitaxial structure of a GaN-based blue laser in this embodiment is substantially the same as that in embodiment 1, except that: the p-GaN hole acceleration layer in this embodiment is disposed between the second InGaN waveguide layer and the p-AlGaN electron blocking layer.
The epitaxial structure of the GaN-based blue laser in example 2 was fabricated to form a GaN-based blue laser using the same chip process as in comparative example 1 and denoted as sample C.
Example 3
The structure of an epitaxial structure of a GaN-based blue laser in this embodiment is substantially the same as that in embodiment 1, except that: the p-GaN hole acceleration layer in this embodiment is provided with two layers, one of which is provided between the second InGaN waveguide layer and the p-AlGaN electron blocking layer and the other of which is provided between the p-AlGaN electron blocking layer and the p-AlGaN confinement layer.
The epitaxial structure of the GaN-based blue laser in example 3 was fabricated to form a GaN-based blue laser using the same chip process as in comparative example 1, and denoted as sample D.
The obtained GaN-based blue lasers were subjected to performance tests (test equipment and methods used for the tests are known to those skilled in the art), and the test results are shown in table 1:
table 1 shows the results of performance characterization of GaN-based blue laser samples A, B, C, and D
As can be seen from table 1, the GaN-based laser formed by adopting the GaN-based laser epitaxial structure provided by the invention obviously increases the optical power of the laser under the condition that the lasing wavelength is basically unchanged, and the threshold voltage and the current value of the laser are improved, so that the service life of the laser is finally prolonged.
It should be understood that the above embodiments are merely for illustrating the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the present invention and implement the same according to the present invention without limiting the scope of the present invention. All equivalent changes or modifications made in accordance with the spirit of the present invention should be construed to be included in the scope of the present invention.
Claims (9)
1. A laser epitaxial structure with a hole acceleration structure comprises an n-type limiting layer, a first waveguide layer, a light emitting layer, a second waveguide layer, a p-type electron blocking layer, a p-type limiting layer and a p-type ohmic contact layer which are sequentially arranged along a designated direction; the method is characterized in that: the epitaxial structure further comprises a p-type hole acceleration layer, wherein the p-type hole acceleration layer is arranged between the second waveguide layer and the p-type limiting layer; an acceptor impurity concentration within the p-type hole acceleration layer is lower than an acceptor impurity concentration within either of the p-type confinement layer and the p-type electron blocking layer; and, the potential barrier of the p-type hole acceleration layer is lower than the potential barrier of either one of the p-type confinement layer and the p-type electron blocking layer.
2. The laser epitaxial structure with hole acceleration structure of claim 1, wherein: the p-type hole acceleration layer comprises a first p-type hole acceleration layer and/or a second p-type hole acceleration layer, the first p-type hole acceleration layer is arranged between the p-type electron blocking layer and the p-type limiting layer, and the second p-type hole acceleration layer is arranged between the p-type electron blocking layer and the second waveguide layer.
3. The laser epitaxial structure with hole acceleration structure of claim 2, wherein: a first polarization field is formed between the first p-type hole acceleration layer and the p-type limiting layer, a second polarization field is formed between the first p-type hole acceleration layer and the p-type electron blocking layer, the vector directions of the first polarization field and the second polarization field are opposite, the intensity of the first polarization field is larger than that of the second polarization field, and holes moving from the p-type limiting layer to the light emitting layer can be accelerated by the first polarization field.
4. The laser epitaxial structure with hole acceleration structure of claim 2, wherein: a third polarization field is formed between the second p-type hole acceleration layer and the p-type electron blocking layer, and holes moving from the p-type limiting layer and the p-type electron blocking layer to the light emitting layer can be accelerated by the third polarization field.
5. The laser epitaxial structure with hole acceleration structure of claim 3 or 4, wherein: the p-type electron blocking layer and the p-type limiting layer are both made of III-group nitride materials containing Al, and the Al content in the p-type limiting layer is larger than that in the p-type electron blocking layer.
6. The laser epitaxial structure with hole acceleration structure of claim 5, wherein: the materials of the first waveguide layer and the second waveguide layer comprise InGaN, and the materials of the p-type electron blocking layer and the p-type limiting layer comprise AlGaN.
7. The laser epitaxial structure with hole acceleration structure of claim 3 or 4, wherein: acceptor impurity concentration in the p-type electron blocking layer is 1E20-1E21cm -3 Acceptor impurity concentration in the p-type confinement layer is 1E19-1E20cm -3 The first p-type hole acceleration layer and the second p-type hole acceleration layerThe p-type hole accelerating layers are all lightly Mg-doped p-GaN layers, and the acceptor impurity concentrations of the first p-type hole accelerating layer and the second p-type hole accelerating layer are 1E16cm -3 -1E17cm -3 。
8. The laser epitaxial structure with hole acceleration structure of claim 1, comprising: an n-GaN substrate, an n-AlGaN confinement layer, a first InGaN waveguide layer, an InGaN/GaN quantum well light-emitting layer, a second InGaN waveguide layer, a p-AlGaN electron blocking layer, an up-GaN hole acceleration layer, a p-AlGaN confinement layer, and a p-GaN ohmic contact layer are sequentially stacked,
or an n-GaN substrate, an n-AlGaN limiting layer, a first InGaN waveguide layer, an InGaN/GaN quantum well light-emitting layer, a second InGaN waveguide layer, an up-GaN hole acceleration layer, a p-AlGaN electron blocking layer, a p-AlGaN limiting layer and a p-GaN ohmic contact layer which are sequentially stacked;
or an n-GaN substrate, an n-AlGaN limiting layer, a first InGaN waveguide layer, an InGaN/GaN quantum well light-emitting layer, a second InGaN waveguide layer, an up-GaN hole acceleration layer, a p-AlGaN electron blocking layer, an up-GaN hole acceleration layer, a p-AlGaN limiting layer and a p-GaN ohmic contact layer which are sequentially stacked.
9. A laser comprising the laser epitaxial structure with hole acceleration structure of any one of claims 1-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310118063.6A CN116031755B (en) | 2023-02-15 | 2023-02-15 | Laser epitaxial structure with hole acceleration structure and laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310118063.6A CN116031755B (en) | 2023-02-15 | 2023-02-15 | Laser epitaxial structure with hole acceleration structure and laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116031755A CN116031755A (en) | 2023-04-28 |
| CN116031755B true CN116031755B (en) | 2023-06-13 |
Family
ID=86070735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310118063.6A Active CN116031755B (en) | 2023-02-15 | 2023-02-15 | Laser epitaxial structure with hole acceleration structure and laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116031755B (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2770848B2 (en) * | 1995-09-22 | 1998-07-02 | 日本電気株式会社 | Integrated light source of semiconductor laser and optical modulator and method of manufacturing the same |
| US7462884B2 (en) * | 2005-10-31 | 2008-12-09 | Nichia Corporation | Nitride semiconductor device |
| CN113991429A (en) * | 2021-11-18 | 2022-01-28 | 中国科学院半导体研究所 | Gallium nitride-based laser for improving hole injection |
| CN114709305A (en) * | 2022-03-11 | 2022-07-05 | 安徽格恩半导体有限公司 | Semiconductor light-emitting element with electron scattering and hole accelerating quantum barrier layer |
-
2023
- 2023-02-15 CN CN202310118063.6A patent/CN116031755B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN116031755A (en) | 2023-04-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8741686B2 (en) | Semiconductor device | |
| US6525335B1 (en) | Light emitting semiconductor devices including wafer bonded heterostructures | |
| JP2890390B2 (en) | Gallium nitride based compound semiconductor light emitting device | |
| CN111599902B (en) | Light-emitting diode with hole injection structure electron barrier layer | |
| KR100649496B1 (en) | Nitride semiconductor light emitting device and method of manufacturing the same | |
| US20100283035A1 (en) | Light emitting device | |
| KR100542720B1 (en) | GaN-based Semiconductor junction structure | |
| RU2277736C1 (en) | Semiconductor element emitting light in visible-spectrum blue region | |
| CN116031755B (en) | Laser epitaxial structure with hole acceleration structure and laser | |
| JP4048662B2 (en) | Semiconductor light emitting device | |
| KR100643262B1 (en) | Gallium-nitride-based light-emitting apparatus | |
| CN113991429A (en) | Gallium nitride-based laser for improving hole injection | |
| CN115733052A (en) | Ultraviolet laser epitaxial wafer and preparation method thereof | |
| JPH11220172A (en) | Gallium nitride compound semiconductor light-emitting element | |
| JP2011205148A (en) | Semiconductor device | |
| CN111326616A (en) | Semiconductor light-emitting element | |
| CN115986023B (en) | Epitaxial wafer and light-emitting diode comprising epitaxial wafer | |
| CN116365363A (en) | Laser epitaxial structure and laser | |
| CN115912057A (en) | Laser with electron expansion structure and growing method thereof | |
| CN111326628A (en) | Light emitting diode based on N-type doped laminated layer and functional layer | |
| CN216794241U (en) | Gallium nitride-based laser for improving hole injection | |
| JP3972943B2 (en) | Gallium nitride compound semiconductor light emitting device | |
| JP3956753B2 (en) | Gallium nitride compound semiconductor light emitting device | |
| CN116111454A (en) | Laser epitaxial structure with transition compensation structure and laser | |
| JP2000196144A (en) | Semiconductor light emitting element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |