CN116015261A - Threshold voltage protection circuit and method based on SiC power device - Google Patents
Threshold voltage protection circuit and method based on SiC power device Download PDFInfo
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Abstract
The invention relates to a SiC power device protection technology, and discloses a threshold voltage protection circuit and a threshold voltage protection method based on a SiC power device, wherein the threshold voltage protection circuit comprises a DSP data processing unit, a temperature sampling unit, an isolation voltage sampling unit, a power supply conversion unit, a signal isolation unit, a device driving unit, a trigger signal acquisition unit and a driving control unit; because the threshold voltage is a temperature sensitive parameter, particularly has strong linear characteristics in the SiC MOSFET, the junction temperature of the device is estimated by using the threshold voltage value by contrasting the threshold voltage and the junction temperature curve; the circuit designed by the invention is used for protecting the threshold voltage drift, and the reliability of the gate oxide of the device is evaluated on line in real time based on the threshold voltage drift amount.
Description
Technical Field
The invention relates to a SiC power device protection technology, in particular to a threshold voltage protection circuit and method based on a SiC power device.
Background
The SiC MOSFET is widely applied to the fields of automobile OBC, server power supply, photovoltaics and the like as a wide bandgap semiconductor by virtue of high voltage resistance, high temperature resistance and ultrahigh frequency switching speed. However, the electrical parameter drift of the SiC MOSFET under different temperatures and driving voltages is complex, especially the threshold voltage drift characteristic, which greatly hinders the wide application of SiC due to the problem of threshold voltage drift, and the longitudinal comparison of the conventional threshold voltage drift test technology device under stress conditions of different bias temperatures cannot be used as a standard test technology for evaluating Vth instability, and the test result cannot be used in practical use to ensure the long-term reliable operation of the device.
The microscopic intrinsic factors of the threshold voltage drift mainly comprise SiC/SiO2 interface traps, oxide traps, fixed charges, movable ions, dipoles, siC side traps at the interface and interface traps between a grid and SiO2, the influence of different defects on the threshold voltage drift is different, and the threshold voltage drift is caused by design processes of different manufacturers.
The threshold voltage after long-term operation increases the loss of the device to cause serious heat generation if the threshold voltage is high, and the threshold voltage after long-term operation has crosstalk risk to cause through if the threshold voltage is low.
As in the first prior art, CN202110707621.3 is a transistor gate oxide testing device and system based on a method for detecting gate leakage current, and a detection circuit is integrated in a chip, and if the method is adopted for gate oxide detection, a special chip needs to be purchased.
In the second prior art, CN201510144158.0 is a gate oxide layer defect detection method and a device leakage detection method, in which the voltage contrast of a gate is observed through an external instrument to realize gate oxide reliability measurement, and if the method is adopted, real-time online detection cannot be realized.
In the third prior art, the on-line state monitoring circuit of the CN202111478768.6 based on the power device on delay time triggers the Vgs sampling by driving the ground on instant peak, and the sampling precision depends on the quality of the Layout of the PCB. If the sampling method is used in actual use, the sampling accuracy is seriously affected due to the difference of source leakage inductance.
The research on threshold voltage drift in a laboratory is to test threshold voltage drift characteristics under different gate voltages and ring temperatures, and the test result cannot accurately predict the threshold voltage drift characteristics in actual products; siC MOSFETs designed by different manufacturers have different threshold voltage drift characteristics and are difficult to predict; in practical use, the problem that the threshold voltage is shifted to cause product failure cannot be effectively protected.
Disclosure of Invention
Aiming at the problems that in the prior art, the reliability evaluation of the SiC gate oxide is mainly based on gate electrode leakage detection, and the gate electrode leakage current is extremely small, so that the test evaluation can be generally carried out only in a laboratory, and a method for evaluating the reliability of the gate oxide by real-time online detection is basically unavailable in the market, the invention provides a threshold voltage protection circuit and a threshold voltage protection method based on a SiC power device.
In order to solve the technical problems, the invention is solved by the following technical scheme:
the threshold voltage protection circuit based on the SiC power device comprises a DSP data processing unit, an isolation voltage sampling unit, a power supply conversion unit, a signal isolation unit, a device driving unit, a trigger signal acquisition unit and a driving control unit;
the isolation voltage sampling unit is used for collecting voltage signals and isolating high-voltage and low-voltage signals;
the DSP data processing unit is used for receiving the Vgs voltage signal of the isolated voltage sampling unit and the trigger signal of the signal isolation unit;
the trigger signal acquisition unit acquires a signal at the current rising time and transmits the signal at the current rising time to the DSP data processing unit and the signal isolation unit;
the signal isolation unit is used for transmitting digital signals at two sides of high voltage and low voltage, and PWM signals of the DSP data processing unit are transmitted to the device to the driving unit through the signal isolation unit;
transmitting the current signal acquired by the trigger signal acquisition unit to the DSP data processing unit;
the power supply conversion unit converts the high-voltage power supply into a low-voltage power supply and provides the power supply to the isolated voltage sampling unit and the signal isolation unit.
Preferably, the system further comprises a temperature sampling unit, wherein the temperature sampling unit is used for collecting the ambient temperature and transmitting the collected ambient temperature to the DSP data processing unit.
Preferably, the isolated voltage sampling unit includes a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, and an isolated sampling chip U1, where the capacitor C1 and the capacitor C2 are connected in parallel, and connected to a VCC end and a DGND end of the isolated sampling chip U1, the capacitor C3 and the capacitor C4 are connected in parallel, and connected to a VDD end and a DGND end of the isolated sampling chip U1, and the capacitor C1, the capacitor C2, the capacitor C3, and the capacitor C4 are used for supplying power to the isolated sampling chip U1.
Preferably, the signal isolation unit comprises a capacitor C5, a capacitor C6, a capacitor C7, a capacitor C8 and a digital isolation chip U2; the capacitor C5 and the capacitor C6 are connected in parallel and connected with the VCC end and the DGND end of the isolation sampling chip U2, and the capacitor C7 and the capacitor C8 are connected in parallel and connected with the VDD end and the DGND end of the isolation sampling chip U2; the capacitor C5, the capacitor C6, the capacitor C7 and the capacitor C8 are used for supplying power to the isolated sampling chip U2.
Preferably, the trigger signal acquisition unit comprises a resistor R3, a resistor R4, a resistor R5 and a comparator U6; the positive input end of the comparator U6 is connected with the resistor R4 and the voltage VREF, the negative input end of the comparator U6 is connected with the resistor R3, and the output end of the comparator U6 is connected with the other ends of the resistors R5 and R4.
Preferably, the device driving unit includes a capacitor C11, a capacitor C12, a capacitor C13, and a gate driving chip U3; the capacitor C11 and the capacitor C12 are connected in parallel and connected with the VDD end of the grid driving chip U3; the capacitor C11 and the capacitor C12 are power supply capacitors of the grid driving chip U3, and the capacitor C13 is an energy storage capacitor for driving negative pressure and provides turn-off negative pressure for the power device.
Preferably, the drive control unit includes a resistor R1 and a resistor R2; the resistor R1 is a grid switch resistor for controlling the switching speed of the power device, and the resistor R2Wie is a grid pull-down resistor for preventing the power device from being turned on by mistake.
In order to solve the technical problem, the invention also provides a threshold voltage protection method based on the SiC power device, which comprises the following steps:
acquiring a voltage value Vth1 of the SiC power device, wherein the voltage value Vth1 of the SiC power device is a voltage value recorded when the SiC power device leaves a factory at a temperature T1;
acquiring a voltage value Vth2 in the practical process of the SiC power device, wherein the voltage value Vth2 is a voltage value when the temperature T2 in the use process of the SiC power device is consistent with the temperature T1 in the delivery process;
and obtaining a protection signal, comparing the voltage value Vth1 of the SiC power device with the voltage value Vth2 of the SiC power device in the practical process, and sending the protection signal to the SiC power device when the voltage value is larger than the set VTH.
Preferably, the method for acquiring the voltage value Vth2 in the practical process of the SiC power device includes:
acquiring an ambient temperature T, wherein the DSP data processing unit acquires the ambient temperature T through a temperature sampling unit;
acquiring the rising time t of the current sampling signal, and acquiring the rising time t of the current sampling signal through a DSP data processing unit;
acquiring a voltage Vgs at the rising time t of a current sampling signal, transmitting a voltage signal acquired by an isolation voltage sampling unit to a DSP data processing unit, and acquiring a voltage Vgs value at the rising time t of the current sampling signal through the DSP data processing unit;
and acquiring a voltage value Vth2 in the practical process of the SiC power device, wherein the voltage Vgs value corresponding to the rising time T of the current sampling signal is the voltage value Vth2 in the practical process of the SiC power device at the ambient temperature T.
Preferably, the acquiring of the rising time t of the current sampling signal includes:
after the DSP data processing unit sends out a PWM signal, a voltage signal in the current sampling unit rises, when the voltage signal in the current sampling unit exceeds a current threshold VREF, the voltage of the comparator U6 is converted from high level to low level, and the time t is the rising time of the current sampling signal.
The invention has the remarkable technical effects due to the adoption of the technical scheme:
because the threshold voltage is a temperature sensitive parameter, particularly has strong linear characteristics in the SiC MOSFET, and the threshold voltage and junction temperature curve are referenced below, the junction temperature of the device is estimated through the threshold voltage value, the invention has the advantages of simple design, low design cost and high test precision, and can realize the protection of threshold voltage drift.
The circuit designed by the invention is used for protecting the threshold voltage drift, and the reliability of the gate oxide of the device is evaluated on line in real time based on the threshold voltage drift amount.
Drawings
Fig. 1 is a block diagram of the system of the present invention.
Figure 2 is a flow chart of the present invention.
Fig. 3 is a flowchart for acquiring the voltage value Vth2 in the practical process of the SiC power device of the present invention.
Fig. 4 is a circuit diagram of the present invention.
Fig. 5 is a waveform diagram of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Example 1
The threshold voltage protection circuit based on the SiC power device comprises a DSP data processing unit, an isolation voltage sampling unit, a power supply conversion unit, a signal isolation unit, a device driving unit, a trigger signal acquisition unit and a driving control unit, wherein the DSP data processing unit is used for processing a signal; the DSP data processing unit is used for receiving Vgs voltage signals of the isolation voltage sampling unit, triggering signals of the signal isolation unit, and the triggering signal acquisition unit acquires signals at the current rising moment and transmits the signals to the DSP data processing unit;
the DSP data processing unit sends PWM signals to the signal isolation unit, and the signal isolation unit transmits the PWM signals to the device driving unit;
the isolation voltage sampling unit is used for collecting voltage signals and isolating high-voltage and low-voltage signals;
the signal isolation unit is used for transmitting digital signals at two sides of high voltage and low voltage, and transmitting PWM signals of the DSP data processing unit to the device to the driving unit through the signal isolation unit; the current signal acquired by the trigger signal acquisition unit is sent to the DSP data processing unit;
the power supply conversion unit mainly converts high-voltage power into low-voltage power for providing voltage to the isolated voltage sampling unit and the signal isolation unit;
the trigger signal acquisition unit is used for acquiring a current rising time signal and transmitting the acquired signal to the signal isolation unit.
The specific circuit is shown in fig. 4, wherein the isolated voltage sampling unit includes a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, and an isolated sampling chip U1, the capacitor C1 and the capacitor C2 are connected in parallel, and are connected to a VCC end and a DGND end of the isolated sampling chip U1, the capacitor C3 and the capacitor C4 are connected in parallel, and are connected to a VDD end and a DGND end of the isolated sampling chip U1, and the capacitor C1, the capacitor C2, the capacitor C3, and the capacitor C4 are used for supplying power to the isolated sampling chip U1.
The trigger signal acquisition unit is used for acquiring a current rising time signal and transmitting the acquired signal to the signal isolation unit.
The signal isolation unit comprises a capacitor C5, a capacitor C6, a capacitor C7, a capacitor C8 and a digital isolation chip U2; the capacitor C5 and the capacitor C6 are connected in parallel and connected with the VCC end and the DGND end of the isolation sampling chip U2, and the capacitor C7 and the capacitor C8 are connected in parallel and connected with the VDD end and the DGND end of the isolation sampling chip U2; the capacitor C5, the capacitor C6, the capacitor C7 and the capacitor C8 are used for supplying power to the isolated sampling chip U2.
The trigger signal acquisition unit comprises a resistor R3, a resistor R4, a resistor R5 and a comparator U6; the positive input end of the comparator U6 is connected with the resistor R4 and the voltage VREF, the negative input end of the comparator U6 is connected with the resistor R3, and the output end of the comparator U6 is connected with the other ends of the resistors R5 and R4. R4 is positive feedback resistance and plays a hysteresis role, the misoperation of a comparator U6 is prevented, a current sampling part can be a Hall current sensor, a resistor, parasitic inductance or the like, VREF is recommended to be about 0.5-1V, a certain anti-interference effect can be achieved, and the sampling precision can be ensured.
The device driving unit comprises a capacitor C11, a capacitor C12, a capacitor C13 and a grid driving chip U3; the capacitor C11 and the capacitor C12 are connected in parallel and connected with the VDD end of the grid driving chip U3; the capacitor C11 and the capacitor C12 are power supply capacitors of the grid driving chip U3, and the capacitor C13 is an energy storage capacitor for driving negative pressure and provides turn-off negative pressure for the power device.
The driving control unit comprises a resistor R1 and a resistor R2; the resistor R1 is a grid switch resistor for controlling the switching speed of the power device, and the resistor R2Wie is a grid pull-down resistor for preventing the power device from being turned on by mistake.
The power supply conversion unit comprises a capacitor C9, a capacitor C10 and a U4 linear regulated power supply chip, wherein the capacitor C9 and the capacitor C10 are regulated capacitors of LDO, the LDO selects 7805 linear regulated power supply chip, reduces the VDD to 5V, and supplies power to the isolation sampling chip U1 and the isolation sampling chip U2.
Example 2
On the basis of embodiment 1, the embodiment further comprises a temperature sampling unit, wherein the temperature sampling unit is used for collecting the ambient temperature, the temperature sampling unit collects the temperature through the NTC, and the collected ambient temperature is transmitted to the DSP data processing unit.
Example 3
Based on the above embodiments, the present embodiment is a threshold voltage protection method based on SiC power devices, and in fig. 2, the method implemented by the threshold voltage protection circuit based on SiC power devices includes:
acquiring a voltage value Vth1 of the SiC power device, wherein the voltage value Vth1 of the SiC power device is a voltage value recorded when the SiC power device leaves a factory at a temperature T1;
acquiring a voltage value Vth2 in the practical process of the SiC power device, wherein the voltage value Vth2 is a voltage value when the temperature T2 in the use process of the SiC power device is consistent with the temperature T1 in the delivery process; in fig. 5, the turn-on process VGS of the MOSFET is the gate driving voltage, id is the current flowing through the MOSFET, VDS is the voltage across the MOSFET, the present invention obtains the information at time t2 by using the current comparison, and reads VGS information at time t2, where VGS is Vth.
And obtaining a protection signal, comparing the voltage value Vth1 of the SiC power device with the voltage value Vth2 of the SiC power device in the practical process, and sending the protection signal to the SiC power device when the voltage value is larger than the set VTH.
As shown in fig. 3, the method for acquiring the voltage value Vth2 in the practical process of the SiC power device includes:
acquiring an ambient temperature T, wherein the DSP data processing unit acquires the ambient temperature T through a temperature sampling unit;
acquiring the rising time t of the current sampling signal, and acquiring the rising time t of the current sampling signal through a DSP data processing unit;
acquiring a voltage Vgs at the rising time t of a current sampling signal, transmitting a voltage signal acquired by an isolation voltage sampling unit to a DSP data processing unit, and acquiring a voltage Vgs value at the rising time t of the current sampling signal through the DSP data processing unit;
and acquiring a voltage value Vth2 in the practical process of the SiC power device, wherein the voltage Vgs value corresponding to the rising time T of the current sampling signal is the voltage value Vth2 in the practical process of the SiC power device at the ambient temperature T.
The acquisition of the rising time t of the current sampling signal comprises the following steps: after the DSP data processing unit sends out a PWM signal, a voltage signal in the current sampling unit rises, when the voltage signal in the current sampling unit exceeds a current threshold VREF, the voltage of the comparator U6 is converted from high level to low level, and the time t is the rising time of the current sampling signal.
Claims (10)
1. The threshold voltage protection circuit based on the SiC power device comprises a DSP data processing unit, a temperature sampling unit, an isolation voltage sampling unit, a power supply conversion unit, a signal isolation unit, a device driving unit, a trigger signal acquisition unit and a driving control unit; it is characterized in that the method comprises the steps of,
the isolation voltage sampling unit is used for collecting voltage signals and isolating high-voltage and low-voltage signals;
the DSP data processing unit is used for receiving the Vgs voltage signal of the isolated voltage sampling unit and the trigger signal of the signal isolation unit;
the trigger signal acquisition unit acquires a signal at the current rising time and transmits the signal at the current rising time to the DSP data processing unit and the signal isolation unit;
the signal isolation unit is used for transmitting digital signals at two sides of high voltage and low voltage, and PWM signals of the DSP data processing unit are transmitted to the device to the driving unit through the signal isolation unit; transmitting the current signal acquired by the trigger signal acquisition unit to the DSP data processing unit;
the power supply conversion unit converts the high-voltage power supply into a low-voltage power supply and provides the power supply to the isolated voltage sampling unit and the signal isolation unit.
2. The SiC power device based threshold voltage protection circuit of claim 1, further comprising a temperature sampling unit for collecting an ambient temperature and transmitting the collected ambient temperature to the DSP data processing unit.
3. The SiC power device based threshold voltage protection circuit of claim 1, wherein the isolated voltage sampling unit includes a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, and an isolated sampling chip U1, the capacitor C1 and the capacitor C2 are connected in parallel, and are connected to a VCC terminal and a DGND terminal of the isolated sampling chip U1, the capacitor C3 and the capacitor C4 are connected in parallel, and are connected to a VDD terminal and a DGND terminal of the isolated sampling chip U1, and the capacitor C1, the capacitor C2, the capacitor C3, and the capacitor C4 are used for supplying power to the isolated sampling chip U1.
4. The SiC power device based threshold voltage protection circuit of claim 1, wherein the signal isolation unit includes a capacitor C5, a capacitor C6, a capacitor C7, a capacitor C8, and a digital isolation chip U2; the capacitor C5 and the capacitor C6 are connected in parallel and connected with the VCC end and the DGND end of the isolation sampling chip U2, and the capacitor C7 and the capacitor C8 are connected in parallel and connected with the VDD end and the DGND end of the isolation sampling chip U2; the capacitor C5, the capacitor C6, the capacitor C7 and the capacitor C8 are used for supplying power to the isolated sampling chip U2.
5. The threshold voltage protection circuit based on the SiC power device according to claim 1, wherein the trigger signal collecting unit includes a resistor R3, a resistor R4, a resistor R5, and a comparator U6; the positive input end of the comparator U6 is connected with the resistor R4 and the voltage VREF, the negative input end of the comparator U6 is connected with the resistor R3, and the output end of the comparator U6 is connected with the other ends of the resistors R5 and R4.
6. The SiC power device based threshold voltage protection circuit of claim 1, wherein,
the device driving unit comprises a capacitor C11, a capacitor C12, a capacitor C13 and a grid driving chip U3; the capacitor C11 and the capacitor C12 are connected in parallel and connected with the VDD end of the grid driving chip U3; the capacitor C11 and the capacitor C12 are power supply capacitors of the grid driving chip U3, and the capacitor C13 is an energy storage capacitor for driving negative pressure and provides turn-off negative pressure for the power device.
7. The SiC power device based threshold voltage protection circuit of claim 1, wherein the drive control unit includes a resistor R1 and a resistor R2; the resistor R1 is a grid switch resistor for controlling the switching speed of the power device, and the resistor R2Wie is a grid pull-down resistor for preventing the power device from being turned on by mistake.
8. The threshold voltage protection method based on the SiC power device is characterized in that the method realized by the threshold voltage protection circuit based on the SiC power device according to any one of claims 1 to 7 comprises the following steps:
acquiring a voltage value Vth1 of the SiC power device, wherein the voltage value Vth1 of the SiC power device is a voltage value recorded when the SiC power device leaves a factory at a temperature T1;
acquiring a voltage value Vth2 in the practical process of the SiC power device, wherein the voltage value Vth2 is a voltage value when the temperature T2 in the use process of the SiC power device is consistent with the temperature T1 in the delivery process;
and obtaining a protection signal, comparing the voltage value Vth1 of the SiC power device with the voltage value Vth2 of the SiC power device in the practical process, and sending the protection signal to the SiC power device when the voltage value is larger than the set VTH.
9. The method for protecting a threshold voltage based on a SiC power device according to claim 8, wherein the method for acquiring the voltage value Vth2 in the practical process of the SiC power device includes:
acquiring an ambient temperature T, wherein the DSP data processing unit acquires the ambient temperature T through a temperature sampling unit;
acquiring the rising time t of the current sampling signal, and acquiring the rising time t of the current sampling signal through a DSP data processing unit;
acquiring a voltage Vgs at the rising time t of a current sampling signal, transmitting a voltage signal acquired by an isolation voltage sampling unit to a DSP data processing unit, and acquiring a voltage Vgs value at the rising time t of the current sampling signal through the DSP data processing unit;
and acquiring a voltage value Vth2 in the practical process of the SiC power device, wherein the voltage Vgs value corresponding to the rising time T of the current sampling signal is the voltage value Vth2 in the practical process of the SiC power device at the ambient temperature T.
10. The SiC power device based threshold voltage protection method of claim 9, wherein the obtaining of the current sampling signal rising time t includes:
after the DSP data processing unit sends out a PWM signal, a voltage signal in the current sampling unit rises, when the voltage signal in the current sampling unit exceeds a current threshold VREF, the voltage of the comparator U6 is converted from high level to low level, and the time t is the rising time of the current sampling signal.
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