CN114167252A - Conduction voltage drop measuring circuit of semiconductor device - Google Patents
Conduction voltage drop measuring circuit of semiconductor device Download PDFInfo
- Publication number
- CN114167252A CN114167252A CN202111456155.2A CN202111456155A CN114167252A CN 114167252 A CN114167252 A CN 114167252A CN 202111456155 A CN202111456155 A CN 202111456155A CN 114167252 A CN114167252 A CN 114167252A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 24
- 230000003321 amplification Effects 0.000 claims abstract description 14
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 14
- 238000005259 measurement Methods 0.000 claims abstract description 10
- 238000005070 sampling Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
Abstract
The invention provides a conduction voltage drop measuring circuit of a semiconductor device, comprising: the circuit comprises a clamping circuit, a switching circuit, a voltage stabilizing circuit and a differential amplifying circuit; the input end of the clamping circuit is connected with the drain electrode of the MOSFET to be tested, the source electrode of the MOSFET to be tested is grounded, the output end of the clamping circuit is connected with the switching circuit and the differential amplification circuit, and the switching circuit is grounded through the voltage stabilizing circuit; and the output end of the differential amplification circuit is connected with a voltage measuring device to calculate junction temperature. The invention can stably and quickly obtain the conduction voltage drop of the semiconductor device, has high measurement precision and is less influenced by temperature.
Description
Technical Field
The invention belongs to the technical field of power electronics, and particularly relates to a conduction voltage drop measuring circuit of a semiconductor device.
Background
A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is an electronic component widely used in analog circuits and digital circuits. In the situation of larger power grade, the power MOSFET is widely applied because of the advantages of good thermal stability, large switching frequency, large safe working area, high comprehensive efficiency and the like. The reliability of the power MOSFET often has a significant impact on the reliability of the overall system. Once the power MOSFET fails, the control and power supply parts cannot operate normally, even resulting in a failure of the system as a whole. When the current value passing through the MOSFET in a conducting state is large, junction temperature can rise, so that the device is damaged, and if the junction temperature can be measured on line, the device can be conveniently controlled, so that the reliability of the MOSFET is greatly improved.
At present, the existing semiconductor device detection methods can be roughly divided into a physical contact type test method, an optical non-contact time test method, a thermal impedance model prediction method and a thermal parameter method, because the internal microscopic physical parameters of the semiconductor device have a corresponding relation with the temperature, the electrical characteristics reflected by the semiconductor device can present a temperature-related change trend when the semiconductor material is affected by the temperature, the thermal parameter method is to represent the junction temperature by using the electrical external characteristics related to the junction temperature, and has the advantages of strong feasibility, high precision, quick response, convenience for on-line monitoring and the like, so the method gradually becomes the mainstream method for monitoring the junction temperature.
In order to accurately obtain the on-resistance of the MOSFET in the operating state, the on-voltage drop and the drain current need to be accurately measured in real time, and the drain current can be accurately measured by using a current sensor. Therefore, how to provide a stable and easily-realized semiconductor device junction temperature online detection technology based on the temperature-sensitive electrical parameters is a technical problem to be solved urgently by technical personnel in the field.
Disclosure of Invention
The invention provides a conduction voltage drop measuring circuit of a semiconductor device, which aims to solve the problem that the existing circuit cannot accurately and stably monitor.
In view of the above, an embodiment of the present invention provides a turn-on voltage drop measuring circuit for a semiconductor device, including: the circuit comprises a clamping circuit, a switching circuit, a voltage stabilizing circuit and a differential amplifying circuit; the input end of the clamping circuit is connected with the drain electrode of the MOSFET to be tested, the source electrode of the MOSFET to be tested is grounded, the output end of the clamping circuit is connected with the switching circuit and the differential amplification circuit, and the switching circuit is grounded through the voltage stabilizing circuit; and the output end of the differential amplification circuit is connected with a voltage measuring device to calculate junction temperature.
Optionally, the clamping circuit includes a first resistor, one end of the first resistor is connected to the drain of the MOSFET to be tested, and the other end of the first resistor is connected to the switching circuit and the differential amplifier circuit.
Optionally, the switch circuit includes a diode, an anode of the diode is connected to the other end of the first resistor, and a cathode of the diode is connected to the voltage stabilizing circuit.
Optionally, the switching circuit further includes a voltage reference source, an anode of the voltage reference source is connected to a cathode of the diode, and a cathode of the voltage reference source is grounded.
Optionally, the voltage stabilizing circuit includes: the cathode of the voltage stabilizing diode is connected with the cathode of the diode, and the anode of the voltage stabilizing diode is grounded through the second resistor.
Optionally, the differential amplifier circuit includes: an operational amplifier, a third resistor and a fourth resistor; the non-inverting input end of the operational amplifier is connected with the clamping circuit, and the inverting input end of the operational amplifier is grounded through the third resistor and is connected with the output end of the operational amplifier through the fourth resistor.
Optionally, the differential amplifier circuit further includes: and the input end of the voltage division circuit is connected with the clamping circuit, and the output end of the voltage division circuit is connected with the same input end of the operational amplifier.
Optionally, the voltage divider circuit includes: one end of the fifth resistor is connected with the clamping circuit, and the other end of the fifth resistor is connected with the non-inverting input end of the operational amplifier and is grounded through the sixth resistor.
Optionally, when the MOSFET to be tested is turned off, the switching circuit is turned on, and the voltage stabilizing circuit limits the output voltage of the output end of the differential amplification circuit.
Optionally, when the MOSFET to be tested is turned on, the switch circuit is turned off, and a conduction voltage drop between the drain and the source of the MOSFET to be tested is output to the voltage measurement device through the clamp circuit and the differential amplifier circuit, and is subjected to voltage sampling.
As can be seen from the above, the conduction voltage drop measurement circuit of a semiconductor device according to an embodiment of the present invention includes: the circuit comprises a clamping circuit, a switching circuit, a voltage stabilizing circuit and a differential amplifying circuit; the input end of the clamping circuit is connected with the drain electrode of the MOSFET to be tested, the source electrode of the MOSFET to be tested is grounded, the output end of the clamping circuit is connected with the switching circuit and the differential amplification circuit, and the switching circuit is grounded through the voltage stabilizing circuit; the output end of the differential amplification circuit is connected with the voltage measuring equipment to calculate junction temperature, so that the conduction voltage drop of the semiconductor device can be stably and quickly obtained, the measurement precision is high, and the influence of temperature is small.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a conduction voltage drop measurement circuit of a semiconductor device in an embodiment of the present invention;
fig. 2 is a circuit diagram of a conduction voltage drop measurement circuit of a semiconductor device in an embodiment of the present invention.
Detailed Description
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
It is to be noted that technical terms or scientific terms used in the embodiments of the present invention should have the ordinary meanings as understood by those having ordinary skill in the art to which the present disclosure belongs, unless otherwise defined. The use of "first," "second," and similar language in the embodiments of the present invention does not denote any order, quantity, or importance, but rather the terms "first," "second," and similar language are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
The embodiment of the invention also provides a conducting voltage drop measuring circuit of the semiconductor device. As shown in fig. 1, the conduction voltage drop measuring circuit of the semiconductor device includes: a clamp circuit 11, a switch circuit 12, a voltage stabilizing circuit 13, and a differential amplifier circuit 14. The input end of the clamp circuit 11 is connected with the drain D of the MOSFET to be tested, the source S of the MOSFET to be tested is grounded GND, the output end of the clamp circuit 11 is connected with the switch circuit 12 and the differential amplifier circuit 14, and the switch circuit 12 is grounded GND through the voltage regulator circuit 13; the output end of the differential amplifying circuit 14 is connected with a voltage measuring device to calculate junction temperature.
The conduction voltage drop measuring circuit of the semiconductor device of the embodiment of the invention is based on the temperature sensitive electrical parameters of the semiconductor device: drain voltage to make junction temperature measurements. When the MOSFET to be tested is turned off, the switching circuit 12 is turned on, and the output voltage of the output terminal of the differential amplification circuit 14 is limited by the voltage stabilizing circuit 13. When the MOSFET to be tested is conducted, the switch circuit 12 is disconnected, and the conduction voltage drop between the drain electrode and the source electrode of the MOSFET to be tested is output to the voltage measuring equipment through the clamping circuit 11 and the differential amplification circuit 14 for voltage sampling. The output end of the differential amplifying circuit 14 outputs the voltage to a voltage measuring device for voltage sampling, and junction temperature calculation can be performed according to the sampled voltage. The differential amplifying circuit 14 can effectively suppress common mode signals, further reduce system errors caused by external temperature changes, accurately input the conduction voltage drop to voltage measuring equipment, and provide calculation conditions for subsequent junction temperature calculation.
In the embodiment of the present invention, the clamping circuit 11 includes a first resistor R1, one end of the first resistor R1 is connected to the drain D of the MOSFET to be tested, and the other end is connected to the switching circuit 12 and the differential amplifier circuit 14. The first resistor R1 is tens to hundreds of k Ω, and when the drain voltage of the MOSFET to be measured exceeds a limit value, the voltage at the output terminal of the differential amplifier circuit 14 will be limited in the range of a voltage measuring device, such as an oscilloscope, thereby solving the problem that the MOSFET cannot be measured.
In the embodiment of the present invention, the switch circuit 12 includes a diode D1, an anode of the diode D1 is connected to the other end of the first resistor R1, and a cathode of the diode D1 is connected to the voltage stabilizing circuit. The switch circuit 12 further includes a voltage reference source VCC, an anode of the voltage reference source VCC is connected to a cathode of the diode D1, and a cathode of the voltage reference source VCC is grounded GND. The voltage reference source VCC can provide an accurate voltage to ensure that the diode D1 is turned off when the MOSFET to be tested is switched on and measures the switching-on voltage drop, thereby avoiding the generation of leakage current of the diode D1, enabling the diode D1 not to be influenced by temperature when in a measuring state, and improving the precision and the temperature application range of the switching-on voltage drop measuring circuit of the semiconductor device. In other embodiments of the present invention, the switch circuit 12 may also use other control switches or semiconductor devices as the switch element, and is not limited herein.
Optionally, the voltage stabilizing circuit 13 includes: a zener diode Z1 and a second resistor R2, the cathode of the zener diode Z1 is connected to the cathode of the diode D1, and the anode of the zener diode Z1 is connected to GND through the second resistor R2. The voltage stabilizing diode Z1 and the second resistor R2 can effectively protect the voltage reference source VCC when the drain voltage of the MOSFET to be tested exceeds a limit value, and the safety protection capability of the conduction voltage drop measuring circuit of the semiconductor device is improved.
The differential amplification circuit 14 includes: an operational amplifier U1, a third resistor R3, and a fourth resistor R4; the non-inverting input terminal of the operational amplifier U1 is connected to the clamp circuit 11, and the inverting input terminal of the operational amplifier U1 is connected to the ground GND through the third resistor R3 and to the output terminal of the operational amplifier U1 through the fourth resistor R4.
Optionally, the differential amplifying circuit 14 further includes: and a voltage divider circuit 141, wherein an input terminal of the voltage divider circuit 141 is connected to the clamp circuit 11, and an output terminal of the voltage divider circuit 141 is connected to the same input terminal of the operational amplifier U1. The voltage dividing circuit 141 includes: one end of the fifth resistor R5 is connected to the clamp circuit 11, and the other end of the fifth resistor R5 is connected to the non-inverting input terminal of the operational amplifier U1, and is connected to the GND through the sixth resistor R6.
The conduction voltage drop measuring circuit of the semiconductor device has good adaptability, can realize wide temperature range, high precision, stability and fast acquisition of the conduction voltage drop of the semiconductor device, effectively avoids the damage of high voltage to measuring equipment when the MOSFET is switched off, and can keep very high precision. The conduction voltage drop measuring circuit of the semiconductor device provided by the embodiment of the invention can also be applied to measurement of conduction voltage drops of other power semiconductor devices.
The conduction voltage drop measuring circuit of the semiconductor device of the embodiment of the invention comprises: the circuit comprises a clamping circuit, a switching circuit, a voltage stabilizing circuit and a differential amplifying circuit; the input end of the clamping circuit is connected with the drain D of the MOSFET to be tested, the source S of the MOSFET to be tested is grounded GND, the output end of the clamping circuit is connected with the switching circuit and the differential amplification circuit, and the switching circuit is grounded GND through the voltage stabilizing circuit; the output end of the differential amplification circuit is connected with the voltage measuring equipment to calculate junction temperature, so that the conduction voltage drop of the semiconductor device can be stably and quickly obtained, the measurement precision is high, and the influence of temperature is small.
Those of ordinary skill in the art will understand that: the discussion of any embodiment above is meant to be exemplary only, and is not intended to intimate that the scope of the disclosure, including the claims, is limited to these examples; within the idea of the present disclosure, also technical features in the above embodiments or in different embodiments may be combined, steps may be implemented in any order, and there are many other variations of the different aspects of the invention as described above, which are not provided in detail for the sake of brevity.
The present invention is intended to embrace all such alternatives, modifications and variances which fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalents, improvements, and the like that may be made within the spirit and principles of the invention are intended to be included within the scope of the disclosure.
Claims (10)
1. A conduction voltage drop measurement circuit of a semiconductor device, the measurement circuit comprising: the circuit comprises a clamping circuit, a switching circuit, a voltage stabilizing circuit and a differential amplifying circuit;
the input end of the clamping circuit is connected with the drain electrode of the MOSFET to be tested, the source electrode of the MOSFET to be tested is grounded, the output end of the clamping circuit is connected with the switching circuit and the differential amplification circuit, and the switching circuit is grounded through the voltage stabilizing circuit; and the output end of the differential amplification circuit is connected with a voltage measuring device to calculate junction temperature.
2. The conducting voltage drop measuring circuit of a semiconductor device according to claim 1, wherein said clamp circuit includes a first resistor, one end of said first resistor is connected to a drain of said MOSFET to be tested, and the other end is connected to said switch circuit and said differential amplifier circuit.
3. The conduction voltage drop measuring circuit of a semiconductor device according to claim 2, wherein the switching circuit includes a diode, an anode of the diode is connected to the other end of the first resistor, and a cathode of the diode is connected to the regulator circuit.
4. The conduction voltage drop measuring circuit of a semiconductor device according to claim 3, wherein said switching circuit further comprises a voltage reference source, an anode of said voltage reference source is connected to a cathode of said diode, and a cathode of said voltage reference source is grounded.
5. The conduction voltage drop measuring circuit of a semiconductor device according to claim 3, wherein the voltage stabilizing circuit comprises: the cathode of the voltage stabilizing diode is connected with the cathode of the diode, and the anode of the voltage stabilizing diode is grounded through the second resistor.
6. The conduction voltage drop measuring circuit of a semiconductor device according to claim 1, wherein said differential amplifying circuit comprises: an operational amplifier, a third resistor and a fourth resistor; the non-inverting input end of the operational amplifier is connected with the clamping circuit, and the inverting input end of the operational amplifier is grounded through the third resistor and is connected with the output end of the operational amplifier through the fourth resistor.
7. The conduction voltage drop measuring circuit of a semiconductor device according to claim 6, wherein said differential amplifying circuit further comprises: and the input end of the voltage division circuit is connected with the clamping circuit, and the output end of the voltage division circuit is connected with the same input end of the operational amplifier.
8. The conduction voltage drop measuring circuit of a semiconductor device according to claim 7, wherein said voltage dividing circuit comprises: one end of the fifth resistor is connected with the clamping circuit, and the other end of the fifth resistor is connected with the non-inverting input end of the operational amplifier and is grounded through the sixth resistor.
9. The conduction voltage drop measuring circuit of a semiconductor device according to claim 1, wherein when the MOSFET to be tested is turned off, the switching circuit is turned on, and the output voltage of the output terminal of the differential amplifying circuit is limited by the voltage stabilizing circuit.
10. The circuit for measuring conduction voltage drop of a semiconductor device according to claim 1, wherein when the MOSFET to be tested is turned on, the switching circuit is turned off, and the conduction voltage drop between the drain and the source of the MOSFET to be tested is output to the voltage measuring device through the clamping circuit and the differential amplifying circuit to be subjected to voltage sampling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202111456155.2A CN114167252A (en) | 2021-12-01 | 2021-12-01 | Conduction voltage drop measuring circuit of semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111456155.2A CN114167252A (en) | 2021-12-01 | 2021-12-01 | Conduction voltage drop measuring circuit of semiconductor device |
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| CN114167252A true CN114167252A (en) | 2022-03-11 |
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| CN202111456155.2A Pending CN114167252A (en) | 2021-12-01 | 2021-12-01 | Conduction voltage drop measuring circuit of semiconductor device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114441924A (en) * | 2022-04-11 | 2022-05-06 | 山东阅芯电子科技有限公司 | Narrow pulse conduction voltage drop test method and circuit suitable for power semiconductor device |
| CN115436771A (en) * | 2022-09-20 | 2022-12-06 | 瑶芯微电子科技(上海)有限公司 | Junction temperature measuring circuit and system |
| CN116008768A (en) * | 2023-03-24 | 2023-04-25 | 杭州飞仕得科技股份有限公司 | Conduction voltage drop test circuit and junction temperature tester |
| CN116718884A (en) * | 2023-04-25 | 2023-09-08 | 重庆大学 | Conduction voltage drop detection circuit, equipment and power conversion device |
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| CN116718884A (en) * | 2023-04-25 | 2023-09-08 | 重庆大学 | Conduction voltage drop detection circuit, equipment and power conversion device |
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Application publication date: 20220311 |