CN116014394A - Electrically-tunable substrate integrated waveguide equalizer based on PIN diode - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 16
- 239000003990 capacitor Substances 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 16
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- 230000000149 penetrating effect Effects 0.000 claims abstract description 4
- 230000007704 transition Effects 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011889 copper foil Substances 0.000 claims description 4
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- 238000012360 testing method Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
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- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- IHQKEDIOMGYHEB-UHFFFAOYSA-M sodium dimethylarsinate Chemical class [Na+].C[As](C)([O-])=O IHQKEDIOMGYHEB-UHFFFAOYSA-M 0.000 description 2
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Abstract
The invention discloses an electrically-controlled substrate integrated waveguide equalizer based on a PIN diode, and belongs to the technical field of microwave and millimeter waves. By providing a slot penetrating through the surface metal layer in the SIW body, introducing a PIN diode and a chip capacitor matched with the PIN diode to increase and regulate the loss on a propagation channel, when electromagnetic waves are in TE in the SIW body 10 When the mode propagates, introducing structures in the slot allows for varying degrees of attenuation of the signal while propagating the TE10 mode. The SIW equalizer can be applied to microwave and millimeter wave circuits and systems, and attenuates signals with different frequencies to different degrees so as to realize an equalization effect; and the equilibrium amount and the voltage arranged on the PIN diode are in monotonous relation in a certain range; and the size proportion of the long and wide sides of the SIW body can be set to realize application adjustment of different frequency bands.
Description
Technical Field
The invention relates to the technical field of microwaves and millimeter waves, in particular to an electrically-tunable substrate integrated waveguide (Substrate Integrated Waveguide, SIW) equalizer based on a PIN diode.
Background
The SIW can realize the traditional metal waveguide transmission characteristic on a dielectric substrate, has the advantages of rectangular waveguide and microwave planar circuit, namely has the advantages of low radiation, low insertion loss, high Q value, high power capacity, miniaturization, integration benefit and the like, and can be compatible with the existing PCB processing technology. The equalizer is one of the basic elements of microwave millimeter wave circuits and systems, and as the frequency increases, most active and passive devices will exhibit a tendency to gain decrease or insertion loss increase. To compensate for amplitude variations due to frequency increases, an equalizer is typically used in engineering to solve this problem.
The existing equalizer working in microwave frequency band mainly has the following reports:
H.Peng et al designed a novel SIW fixed equalizer based on surface resistance, the equalizer applied frequency range was 26-40GHz (Ka frequency band), the measurement results of the equalizing value were 2.8dB, 5.6dB and 9dB, respectively, the return loss was better than-18.8 dB. See, document H.Peng et al, "Substrate Integrated Waveguide Equalizers and Attenuators With Surface Resistance," in IEEE Transactions on Microwave Theory and Techniques, vol.68, no.4, pp.1487-1495,April 2020,doi:10.1109/TMTT.2019.2958267.
S.C. Bera designs an active equalizer based on PIN diode, which is used for temperature and frequency compensation of microwave circuits and systems, and realizes equalization of circuit amplitude by utilizing the characteristic that the impedance characteristic of the PIN diode is changed along with the change of set direct current voltage. In the range of 3-5GHz frequency band, the attenuation characteristic of +/-8 dB can be realized. See literature S.C.Bera, "Amplitude Tilt Active Equalizer for Frequency and Temperature Compensation," in IEEE Microwave Wireless Component Letter, vol.21, no.7, pp.344-346, jul.2011, doi:10.1109/LMWC.2011.2152385.
An equalizer chip is published by Chengshi core semiconductor limited company, the model SIE055SP3, the working frequency band is 2-7GHz, and the adjustable equalizing range is 4-9.5dB. The chip is the first commercial electrically-controlled equalizer chip in the world.
In practical microwave circuit applications, the required equalization amount is often difficult to accurately predict in advance, so that it is important that the designed equalizer can perform corresponding dynamic adjustment on the equalization amount within a certain range. In the above three prior arts, the first equalizer is used only as an equalizer with a fixed equalization amount, and dynamic adjustment cannot be realized; the latter two equalizers can dynamically adjust the equalization amount through voltage change, but the dynamic adjustment of the equalization amount cannot be realized for a higher frequency range because the working frequency is lower (not more than 7 GHz).
Disclosure of Invention
The invention aims to provide an electrically-tunable substrate integrated waveguide equalizer based on a PIN diode, which utilizes the PIN diode to present different impedance characteristics under different voltages to replace a microwave resistor. The impedance value is adjusted by adjusting the direct-current voltage on the diode, so that the dynamic uniform adjustment of the equalizing quantity in a certain range is realized.
An electrically-tunable substrate integrated waveguide equalizer based on a PIN diode is realized by adopting a Rogers 5880 dielectric substrate and comprises a SIW body, a gradual transition line, a 50Ω microstrip line and a copper foil wiring; two ends of the SIW body are respectively connected with a 50 omega microstrip line through a section of gradual transition line;
the SIW body is provided with two rows of metallized through holes, and the length of the hole center distance, i.e. the width edge, of the two rows of metallized through holes is W p The length of the long side is Ls;
the gradual transition line is positioned at the middle part of the wide edge of the SIW body and has the length L t One end connected with the broadside of the SIW body is provided with a width W t One end connected with the 50 omega microstrip is W in width; two sides of the junction of the gradual transition line and the broadside of the SIW body are respectively introduced with a metallized through hole for matching the SIW body with the 50Ω microstrip line, 2 metallized through holes for matching the SIW body with the 50Ω microstrip line at the same end of the SIW body are axisymmetric with the centerline of the broadside of the SIW body, and the two ends of the SIW body are totally 4 metallized through holes for matching;
the diameter of the metallized through hole is dvp, the pitch of the holes of two adjacent metallized through holes on one side of the long side of the SIW body is svp, and the width of a 50 omega microstrip line is W; for matching SIW booksThe distance between the metallized through holes of the body and the 50 omega microstrip line and the adjacent metallized through holes on the same side in the electromagnetic wave propagation direction is L y The distance between the metallized through holes of the SIW body and the 50 omega microstrip line and the adjacent metallized through holes on the same side in the electromagnetic wave propagation vertical direction is matched;
two grooves penetrating through the metal layer on the surface of the SIW body are formed in the two sides of the long side of the SIW body along the length direction of the SIW body, the two grooves are axisymmetric to the center line of the wide side and the center line of the long side of the SIW body, the center lines of the two grooves in the length direction are parallel to the long side of the SIW body, the minimum distance between the two grooves is d, and d is more than 0 and less than Wp-groove width; n balance value adjusting structures are arranged in each groove, the distance between every two adjacent balance value adjusting structures in the same groove is smaller than 5mm, and after the balance value adjusting structures are arranged, the two grooves are symmetrically patterned about the central line of the wide side and the long side of the SIW body, and n is more than or equal to 2; the equalization value adjusting structure consists of a chip capacitor and a PIN diode connected in series with the chip capacitor, a metal layer is arranged between the chip capacitors in the two adjacent equalization value adjusting structures, and the chip capacitors are connected with the metal layer by gold wire bonding; the SIW body is also provided with a direct current power supply structure, and the direct current power supply structure is connected with each balance value adjusting structure through copper foil wires so as to realize power supply to the PIN diode.
Further, the direct current power supply structure is a direct current power supply bonding pad.
Further, both ends of the groove are rectangular, and both ends of the rectangle are rounded.
Further, the grooves are graphically designed to limit the equalization value adjustment structure.
Further, the patterning is designed to introduce symmetrical concave structures at both long sides of each groove.
The working principle of the electric tuning equalizer of the invention is as follows: electromagnetic wave in SIW body with TE 10 The mode propagates and the front and back surfaces in the equalizer structure are covered with metal layers and the two rows of metallized vias of the SIW body are used to constrain the propagation boundary of electromagnetic waves. In the conventional SIW structure, the loss is mainly from dielectric loss and loss caused by skin effect of the metal wall. To increase the loss on the propagation path and the lossThe consumption can be controlled by voltage, and the invention introduces a PIN diode and a chip capacitor used in a matched mode to replace a microwave resistor. The equalizer can realize an adjustable equalizing value (absolute value of insertion loss difference value of high and low frequency ends) which is in monotone relation with direct current voltage change arranged on the PIN diode in a certain range so as to realize electric equalizing property.
The equalizer realized by the invention has the equalization amount which can be dynamically adjusted within a certain range. The SIW equalizer can be applied to microwave and millimeter wave circuits and systems, and attenuates signals with different frequencies to different degrees so as to realize an equalization effect; and the equilibrium amount and the voltage arranged on the PIN diode are in monotonous relation in a certain range; and the size proportion of the long and wide sides of the SIW body can be set to realize application adjustment of different frequency bands.
Drawings
FIG. 1 is a top view block diagram of an embodiment equalizer;
FIG. 2 is a schematic diagram of an embodiment equalizer tank configuration and a series configuration of chip capacitors and PIN diodes;
FIG. 3 is a partial physical enlarged view of the serial structure of the capacitor and the PIN diode of the equalizer chip of the embodiment;
FIG. 4 is a physical diagram of the whole equalizer of the embodiment;
FIG. 5 is a diagram of simulation results of the equalizer S21 of the embodiment;
FIG. 6 is a diagram of simulation results of the equalizer S11 of the embodiment;
FIG. 7 is a graph of the test results of the equalizer S21 (TRL calibration de-embedding) of the embodiment;
FIG. 8 is a graph of the test results of the equalizer S11 (TRL calibration de-embedding) of the embodiment;
FIG. 9 is a graph of the amount of equalization versus control voltage;
reference numerals: SIW body-1, transition line-2, metallized through hole-3, slot-4, fixed PCB screw hole-5, and metallized through hole-6 for matching.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples.
In this embodiment, 2 grooves are all provided, preferably, both ends of the groove are rounded to optimize S11 parameter and facilitate processing, and each groove is formed by adaptively splicing a rectangle and two semicircles, as shown in fig. 1; the rectangle is axisymmetric about the long-side central line of the SIW body, the long-side central line of the rectangle is overlapped with the long-side central line of the SIW, the diameters of the two semicircles are equal to the broadsides of the rectangle and are sj_x, and the semicircles are spliced at the two broadsides of the head end and the tail end of the rectangle respectively in a matched mode. The rectangular long side (side parallel to the electromagnetic wave propagation direction) has a length sj_y.
Further, in order to facilitate post-processing (such as welding the chip capacitor and the PIN diode), and limit the series structure of the chip capacitor and the PIN diode, the grooves are patterned, and the patterned grooves are designed to introduce symmetrical concave structures at two long sides of each groove, as shown in fig. 2. In the embodiment, 12 concave structures with consistent shape and size are respectively introduced at two sides of the long side of each groove (48 concave structures are formed at the two grooves in total, and the concave directions are all directed into the grooves); rectangular recessed structures are preferred, and the center distance between two adjacent recessed structures is del2 (i.e., the center distance of the PIN diodes). The length of the long side (the side parallel to the electromagnetic wave propagation direction) of each rectangular concave structure is dx, and the length of the wide side of each rectangular concave structure is dy (the size of the concave structure can be properly adjusted according to the size of a specific welding PIN diode). The reserved metal layers are arranged between the chip capacitors, and the single chip capacitor is connected with the two adjacent metal layers through gold wire bonding, so that the direct current/alternating current isolation function is achieved. In practical application, the multiple gold wires can lead the current distribution to be more uniform and the balance performance to be more excellent. According to the actual size of the circuit, in the embodiment, the single chip capacitor is connected with the adjacent two metal layers through gold wire bonding.
The present embodiment is a PIN diode-based SIW equalizer fabricated according to the above-described structure as shown in fig. 3 and 4. The SIW equalizer based on the PIN diode works in a Ku frequency band, is realized on a Rogers 5880 dielectric substrate, has the thickness of 0.254mm, the dielectric constant of 2.2, the tangent loss of 0.0009, the copper thickness of 18um, the gold plating of a front metal layer and a back metal layer, the final thickness of 40um, and uses 24 PIN diodes (MADP-000907-14020 x). After simulation and optimization by electromagnetic simulation software Ansoft HFSS, the optimal parameter size is obtained, and is specifically shown in the table 1:
TABLE 1
The S parameter simulation curves of the PIN diode when the equivalent microwave resistance value is changed from 0.1 to 50 are shown in fig. 5 and 6, and the simulation results show that when the resistance value is continuously changed, the equalizing quantity of the equalizer can be adjusted and changed; the actual test needs to be embedded by TRL calibration, and the actual measurement S parameter curves when the direct current voltage arranged on the diode changes from 1.09V to 1.23V are shown in fig. 7 and 8, and as can be seen from the result diagrams, when the voltage steps by taking 0.01V as a unit, the equilibrium amount is adjusted accordingly, and the actual measurement result is basically consistent with the change trend of the simulation result. The equalization value of the SIW equalizer, which is defined as the difference in insertion loss |s21| at the 12GHz and 18GHz frequency points. The equilibrium value test results are shown in Table 2, and the test results show that the equilibrium value is adjustable between 1.59 dB and 7.56dB when the voltage is uniformly changed between 1.09V and 1.23V. The results of Table 2 and FIG. 7 show that the equalizer has an equalizing value monotonically related to the voltage applied to the PIN diode (1.11V. Ltoreq. Control voltage. Ltoreq.1.23V), and thus the equalizer realizes the characteristics of the electrically equalizing amount.
TABLE 2
| Voltage value | S21[dB](12GHz) | S21[dB](18GHz) | Equalization value [ dB ]] |
| 1.09V | -14.01 | -7.45 | 6.56 |
| 1.10V | -13.87 | -6.48 | 7.39 |
| 1.11V | -13.16 | -5.60 | 7.56 |
| 1.12V | -12.08 | -4.88 | 7.20 |
| 1.13V | -10.84 | -4.28 | 6.56 |
| 1.14V | -9.51 | -3.76 | 5.75 |
| 1.15V | -8.34 | -3.34 | 5.00 |
| 1.16V | -7.29 | -3.00 | 4.29 |
| 1.17V | -6.34 | -2.69 | 3.65 |
| 1.18V | -5.59 | -2.45 | 3.14 |
| 1.19V | -4.92 | -2.24 | 2.68 |
| 1.20V | -4.41 | -2.08 | 2.33 |
| 1.21V | -3.98 | -1.95 | 2.03 |
| 122V | -3.61 | -1.83 | 1.78 |
| 1.23V | -3.32 | -1.73 | 1.59 |
The above simulation and actual measurement junctionThe result shows that two grooves penetrating through the metal layer on the surface of the SIW body are formed in two sides of the long side of the SIW body, and the PIN diode and the chip capacitor are welded at the positions of corresponding groove bonding pads in the grooves. As shown in FIG. 9, when electromagnetic waves are in the SIW body with TE 10 The impedance characteristic of the PIN diode can propagate TE when the mode propagates 10 The mode attenuates the signal to some extent at the same time, and in a certain voltage range, the higher the frequency, the lower the loss. The invention has the greatest advantages that the function of the electric adjustment of the equalizer can be effectively realized, the larger the voltage applied to the PIN diode in the range of 1.11V-1.23V is, the smaller the equalization value is, and the dynamic adjustment along with the control voltage is realized. In addition, the used microwave equalizer is of a plane structure, is realized on a conventional PCB, and is low in cost and easier to realize in process.
Claims (5)
1. An electrically-tunable substrate integrated waveguide equalizer based on a PIN diode comprises a SIW body, a gradual transition line, a 50Ω microstrip line and a copper foil wire; two ends of the SIW body are respectively connected with the 50Ω microstrip line through a section of gradual transition line, and the SIW is characterized in that:
the SIW body is provided with two rows of metallized through holes, and the length of the hole center distance, i.e. the width edge, of the two rows of metallized through holes is W p The length of the long side is Ls;
the gradual transition line is positioned at the middle part of the wide edge of the SIW body and has the length L t One end connected with the broadside of the SIW body is provided with a width W t One end connected with the 50 omega microstrip is W in width; two sides of the junction of the gradual transition line and the broadside of the SIW body are respectively introduced with a metallized through hole for matching the SIW body with the 50Ω microstrip line, 2 metallized through holes for matching the SIW body with the 50Ω microstrip line at the same end of the SIW body are axisymmetric with the centerline of the broadside of the SIW body, and the two ends of the SIW body are totally 4 metallized through holes for matching;
the diameter of the metallized through hole is dvp, the pitch of the holes of two adjacent metallized through holes on one side of the long side of the SIW body is svp, and the width of a 50 omega microstrip line is W; the distance between the metallized through hole for matching the SIW body and the 50 omega microstrip line and the adjacent metallized through hole on the same side in the electromagnetic wave propagation direction is L y For matching ofThe distance between the SIW body and the metallized through hole of the 50 omega microstrip line and the distance between the metallized through hole adjacent to the same side in the electromagnetic wave propagation vertical direction;
two grooves penetrating through the metal layer on the surface of the SIW body are formed in the two sides of the long side of the SIW body along the length direction of the SIW body, the two grooves are axisymmetric to the center line of the wide side and the center line of the long side of the SIW body, the center lines of the two grooves in the length direction are parallel to the long side of the SIW body, the minimum distance between the two grooves is d, and d is more than 0 and less than Wp-groove width; n balance value adjusting structures are arranged in each groove, the distance between two adjacent balance value adjusting structures in the same groove is smaller than 5mm, and after the balance value adjusting structures are arranged, the two grooves still have symmetrical patterns about the central lines of the wide side and the long side of the SIW body, and n is more than or equal to 2; the equalization value adjusting structure consists of a chip capacitor and a PIN diode connected in series with the chip capacitor, a metal layer is arranged between the chip capacitors in the two adjacent equalization value adjusting structures, and the chip capacitors are connected with the metal layer by gold wire bonding; the SIW body is also provided with a direct current power supply structure, and the direct current power supply structure is connected with each balance value adjusting structure through copper foil wires so as to realize power supply to the PIN diode.
2. The PIN diode-based electrically tunable substrate integrated waveguide equalizer of claim 1, wherein: the direct current power supply structure is a direct current power supply bonding pad.
3. The PIN diode-based electrically tunable substrate integrated waveguide equalizer of claim 1, wherein: both ends of the groove are rectangular, and both ends of the rectangle are rounded.
4. The PIN diode-based electrically tunable substrate integrated waveguide equalizer of claim 1, wherein: the grooves are graphically designed to limit the equalization value adjustment structure.
5. The PIN diode-based electrically tunable substrate integrated waveguide equalizer of claim 4, wherein: the patterning is designed to introduce symmetrical concave structures at both long sides of each groove.
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