CN116013946A - Transient substrate manufacturing method and display device manufacturing method - Google Patents
Transient substrate manufacturing method and display device manufacturing method Download PDFInfo
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Abstract
The invention relates to a method for manufacturing a transient substrate and a method for manufacturing a display device. The method for manufacturing the transient substrate comprises the following steps: providing a substrate; forming a support layer on the substrate; dividing the supporting layer into a first region and a second region which are arranged at intervals, wherein in the dividing process, the distance between two adjacent first regions and/or two adjacent second regions is adjusted according to the fixing force required by the light-emitting diode chip to be transferred; etching the first region to form a plurality of support modules which are arranged at intervals on the second region. The distance between two adjacent first areas and/or two adjacent second areas can be adjusted according to the fixing force required by the light-emitting diode chip to be transferred, the size of a bonding surface is adjusted, and the fixing force between the electrode of the light-emitting diode chip and the transient substrate is controlled by adjusting the size of the bonding surface.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing technology, and in particular, to a method for manufacturing a transient substrate and a method for manufacturing a display device.
Background
In the Micro light emitting diode (Micro Light Emitting Diode, micro-LED) is an emerging display technology, and compared with the conventional display technology, the display using the Micro LED technology as a core has the characteristics of fast response speed, self-luminescence, high contrast, long service life, high photoelectric efficiency and the like. In the manufacturing process of Micro-LEDs, the LED chips on the growth substrate are required to be transferred and bonded on the transient substrate, then the transfer substrate is utilized to transfer the LED chips from the transient substrate to the back plate, the transfer yield of the LED chips is affected by the bonding force between the transient substrate and the LED chips, and the bonding force on the transient substrate is related to the performance of the used adhesive, so that the bonding force between the LED chips and the transient substrate is inconvenient to control.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present application is to provide a method for manufacturing a transient substrate and a method for manufacturing a display device, which are aimed at solving the technical problem that the magnitude of the fixing force of the transient substrate is inconvenient to control.
The invention provides a method for manufacturing a transient substrate, which comprises the following steps:
providing a substrate;
forming a support layer on the substrate;
dividing the supporting layer into a first region and a second region which are arranged at intervals, wherein in the dividing process, the distance between two adjacent first regions and/or two adjacent second regions is adjusted according to the fixing force required by the light-emitting diode chip to be transferred;
etching the first region to form a plurality of support modules which are arranged at intervals on the second region. The bonding surface is adjusted by adjusting the distance between two adjacent first areas and/or two adjacent second areas, and comprises a contact surface when the support module is bonded with the electrode of the light-emitting diode chip, so that the fixing force between the electrode of the light-emitting diode chip and the transient substrate is adjusted.
Optionally, the step after forming the plurality of support modules disposed at intervals includes:
an adhesion layer is formed on the substrate, and the support module and the adhesion layer have the same length in a first direction, wherein the first direction comprises a direction away from the substrate.
Optionally, the step of forming a support layer on the substrate includes:
a sacrificial layer and a metal layer are sequentially formed on the substrate.
Optionally, the step of etching the first region to form a plurality of support modules disposed at intervals on the second region includes:
forming a photoresist layer on the metal layer, developing the photoresist layer corresponding to the first region to form a plurality of photoresist units arranged at intervals on the second region;
and etching the metal layer and the sacrificial layer on the first area by taking the photoresist unit as a mask so as to form a plurality of support modules which are arranged at intervals.
Optionally, the photoresist layer is a positive photoresist layer, the first region is exposed and developed, and the size and/or the pitch of the formed photoresist unit are controlled.
Optionally, the photoresist layer is a negative photoresist layer, the second region is exposed and the first region is developed, and the size and/or the pitch of the formed photoresist unit are controlled.
Optionally, a plurality of the support modules are equidistantly spaced on the substrate.
Based on the same inventive concept, the present invention provides a display device manufacturing method including:
providing a growth substrate, wherein a plurality of light emitting diode chips to be transferred are arranged on the growth substrate;
providing a transient substrate, forming a supporting layer on a substrate of the transient substrate, carrying out region division on the supporting layer to form a first region and a second region which are arranged at intervals, wherein in the region division process, the distance between two adjacent first regions and/or two adjacent second regions is adjusted according to the fixing force required by a light-emitting diode chip to be transferred, and etching the first regions to form a plurality of supporting modules arranged at intervals on the second regions;
aligning the growth substrate with the transient substrate, and bonding the electrodes of the light emitting diode chip with the support module;
and stripping the light emitting diode chip from the growth substrate. The bonding surface is adjusted by adjusting the distance between the two adjacent first areas and/or the two adjacent second areas, the bonding surface comprises a contact surface when the support module is bonded with the electrode of the light-emitting diode chip, and the fixing force between the electrode of the light-emitting diode chip and the transient substrate is adjusted by adjusting the bonding surface.
Optionally, the step of bonding the electrode of the light emitting diode chip to the support module includes:
the adhesion layer is formed on the substrate, and the length of the support module and the adhesion layer in a first direction is the same, wherein the first direction comprises a direction away from the substrate.
Optionally, bonding the electrodes of the light emitting diode chip with the support module and the adhesion layer respectively.
Optionally, the display device manufacturing method further includes: providing a transfer substrate, and attaching the transfer substrate to the light emitting diode chip;
aligning the light emitting diode chip and the support module with the back plate through the transfer substrate;
and bonding the corresponding bonding pads on the backboard with the electrode of the light-emitting diode chip and the supporting module respectively.
Optionally, the supporting module includes a metal unit and a sacrificial unit, the metal unit is connected with the sacrificial unit, and the metal unit is disposed away from the substrate, and the sacrificial unit is disposed close to the substrate to decompose the sacrificial unit;
and respectively aligning the electrodes of the light emitting diode chips and the corresponding metal units with the back plate by moving the transfer substrate.
Optionally, the step of providing a transfer substrate and attaching the transfer substrate to the led chip includes:
and removing the adhesive layer, wherein the adhesive layer is arranged on the substrate, and the length of the support module and the adhesive layer in a first direction is the same, and the first direction comprises a direction away from the substrate.
The present invention provides a method for manufacturing a transient substrate and a method for manufacturing a display device,
the distance between two adjacent first areas and/or two adjacent second areas can be adjusted according to the fixing force required by the light-emitting diode chip to be transferred, so that the size of a bonding surface is adjusted, and the aim of controlling the fixing force between an electrode of the light-emitting diode chip and a transient substrate is fulfilled by adjusting the size of the bonding surface;
the LED chip and the supporting module can be bonded with the back plate, so that the problem of short circuit of the electrode of the LED chip in the bonding process with the bonding pad can be improved.
Drawings
FIG. 1 is a schematic diagram of a method for manufacturing a transient substrate according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a substrate according to an embodiment of the invention;
FIG. 3 is a schematic view of a support layer according to an embodiment of the invention;
FIG. 4 is a schematic diagram illustrating patterning of a support layer according to an embodiment of the invention;
FIG. 5 is a schematic diagram of a support layer after etching according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a support layer after etching according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of an adhesion layer according to an embodiment of the invention;
FIG. 8 is a schematic diagram of a display device according to an embodiment of the invention;
FIG. 9 is a schematic diagram of a photoresist layer according to an embodiment of the invention;
FIG. 10 is a schematic diagram of a post-lithography photoresist unit according to an embodiment of the present invention;
FIG. 11 is a schematic view of a support module formed in an embodiment of the present invention;
FIG. 12 is a schematic diagram of a display device according to an embodiment of the invention;
FIG. 13 is a schematic diagram of a production substrate according to an embodiment of the invention;
FIG. 14 is a schematic diagram of alignment of a growth substrate and a transient substrate according to an embodiment of the invention;
FIG. 15 is a schematic diagram of a substrate lift-off in accordance with an embodiment of the present invention;
FIG. 16 is a schematic view of an adhesion layer removal according to an embodiment of the invention;
FIG. 17 is a schematic diagram of a method for manufacturing a display device according to an embodiment of the invention;
FIG. 18 is a schematic diagram of a transfer substrate according to an embodiment of the invention;
FIG. 19 is a schematic view of a transfer substrate interfacing with a transient substrate according to an embodiment of the invention;
FIG. 20 is a schematic diagram of a transfer substrate with LED chips attached thereto according to an embodiment of the present invention;
FIG. 21 is a schematic diagram illustrating the butt joint of the LED chip and the back plate according to an embodiment of the invention;
FIG. 22 is a schematic diagram of bonding a LED chip to a back plate according to an embodiment of the invention;
fig. 23 is a schematic structural diagram of a display device according to an embodiment of the invention.
Reference numerals illustrate:
1-a substrate; 10-transient substrate; 2-a support layer; 21-a sacrificial layer; 22-metal layer; 201-a first region; 202-a second region; 3-a photoresist layer; 30-a photoresist unit; 20-a support module; 210-a sacrificial unit; 220-metal units; 4-an adhesion layer; 5-growing a substrate; a 6-light emitting diode chip; 61-electrode; 7-transferring the substrate; 8-a back plate; 81-bonding pads; 9 a display device; 91-a display unit; 911-red light emitting diode chips; 912-green light emitting diode chip; 913-blue light emitting diode chip.
Detailed Description
In order to facilitate an understanding of the present application, a more complete description of the present application will now be provided with reference to the relevant figures. Preferred embodiments of the present application are shown in the accompanying drawings. This application may, however, be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
In the manufacturing process of Micro LEDs or Mini LEDs, the light emitting diode chips need to be transferred from the growth substrate to the transient substrate and temporarily stored, so that the light emitting diode chips are conveniently transferred to the driving circuit of the back plate through the transfer substrate, when the light emitting diodes on the transient substrate need to have higher structural consistency, the transient substrate needs to provide larger fixing force, so that the problem of inconsistent structure when the light emitting diodes on the transient substrate are transferred from the growth substrate to the transient substrate is avoided, when the size of the light emitting diodes on the transient substrate is larger or the adsorption force of the transfer substrate is smaller, the transient substrate needs to provide proper fixing force, so that the problem of inconsistent structure of the light emitting diode chips is avoided, however, the fixing force of the transient substrate is related to the material characteristics of the adhesive material, and the fixing force is inconvenient to adjust to meet the fixing force size requirement of various specifications and various application scenes, the method for manufacturing the transient substrate is provided, and the control of the fixing force of the transient substrate is improved, as shown in fig. 1, and the method for manufacturing the transient substrate comprises:
s1: providing a substrate;
s2: forming a support layer on the substrate;
s3: dividing the supporting layer into a first region and a second region which are arranged at intervals, wherein in the dividing process, the distance between two adjacent first regions and/or two adjacent second regions is adjusted according to the fixing force required by the light-emitting diode chip to be transferred;
s4: etching the first region to form a plurality of support modules which are arranged at intervals on the second region.
As shown in fig. 2, in step S1, a substrate 1 is exemplarily provided, where the substrate 1 is used to carry a support module and a light emitting diode chip, and the material may be selected from one of monocrystalline silicon, quartz, glass, and sapphire, for example, may be set as monocrystalline silicon, and may be set as monocrystalline silicon, for example. After the substrate 1 is provided, the surface of the substrate 1 may be cleaned.
As shown in fig. 3, in step S2, it is exemplarily illustrated that the support layer 2 is deposited and grown on the substrate 1, for example, the support layer 2 may be deposited by chemical vapor deposition (Chemical Vapor Deposition, CVD) which means a method of synthesizing a coating or nanomaterial by reacting a chemical gas or vapor on the surface of a substrate, and for example, the support layer 2 may be deposited by physical vapor deposition (Physical Vapor Deposition, PVD) which means a technique of vaporizing a material source (solid or liquid) surface into gaseous atoms or molecules or partially ionizing ions under vacuum conditions and depositing a thin film on the surface of a substrate by a low pressure gas (or plasma) process.
As shown in fig. 3, 4 and 5, in step S3, it is exemplarily illustrated that the supporting layer 2 is divided into a first area 201 and a second area 202 that are disposed at intervals, where, during the division, the distance between two adjacent first areas 201 and/or two adjacent second areas 202 is adjusted according to the amount of fixing force required by the led chip to be transferred. For example, the mask pattern may be provided by using a mask to divide the support layer 2 into a region to be etched and a non-etched region, i.e., the first region 201 and the second region 202, where the shape of the pattern in the mask may be changed, so that the space between the formed first regions 201 is increased or decreased, and then the size of the second region 202 is increased or decreased, or so that the space between the formed second regions 202 is increased or decreased, and then the size of the first region 201 is increased or decreased, so as to meet the requirement of a fixing force, for example, when a larger fixing force is required, the size of the second region 202 is increased and/or the space of the second region 202 is decreased, for example, when a smaller fixing force is required, the size of the second region 202 is decreased, and for example, the space of the first region 201 is adjusted to adjust the size of the second region 202, and when the space of the first region 201 is larger, the size of the second region 202 is correspondingly decreased when the space of the first region 201 is smaller.
As shown in fig. 3, 4 and 5, in step S4, the first region 201 is etched to form a plurality of support modules 20 disposed at intervals on the second region 202. The size and/or spacing of the support modules 20 affects the size of the bonding surface, wherein the bonding surface includes a contact surface when the support modules are bonded to the electrodes of the light emitting diode chip, for example, when the spacing of the support modules 20 is smaller, the number of the support modules 20 bonded to the light emitting diode chip increases, and thus the bonding surface is also increased, for example, when the size of the support modules 20 is larger, the bonding area of the support modules 20 bonded to the light emitting diode increases, and thus the bonding surface is also increased, when the bonding surface is larger, the fixing force of the transient substrate is larger, and when the bonding surface is smaller, the fixing force of the transient substrate is smaller.
As shown in fig. 5, the number of the support modules 20 may be plural, and plural support modules 20 may be disposed on the substrate 1 at intervals, one end of the support module 20 is connected with the substrate 1, and the other end of the support module 20 may have an adhesive property, and may be capable of adhering a light emitting diode chip from a growth substrate, and may also provide a fixing force for the transient substrate, when the support modules 20 are disposed at intervals, the structure and the arrangement manner of the support modules 20 affect the size of the bonding surface, and by adjusting the size of the bonding surface between the support modules 20 and the light emitting diode chip, the fixing force provided by the transient substrate is controlled, when the bonding surface is larger, the fixing force of the transient substrate is larger, and when the bonding surface is smaller, the fixing force of the transient substrate is smaller.
In order to further adjust the magnitude of the fixation force and improve the threshold range of fixation force adjustment, as shown in fig. 6 and 7, after step S3, it includes: an adhesion layer 4 is formed on the substrate 1, and the support module 20 has the same length as the adhesion layer 4 in a first direction including a direction away from the substrate 1. Illustratively, the first direction includes a direction perpendicular to the substrate 1, and the adhesive layer 4 is consistent with the height of the support module 20, so that the adhesive layer 4 and the support module 20 disposed at intervals can generate a fixing force on the light emitting diode chip together through the same end surface, the fixing force includes a material adhesion force between the adhesive layer 4 and an electrode of the light emitting diode chip, the fixing force also includes a bonding force between the support module 20 and the electrode of the light emitting diode chip, for example, the adhesive layers with different material characteristics can be selected, the magnitude of the adhesion force can be adjusted, and the magnitude of the fixing force can be adjusted by adjusting the adhesion force and the bonding force.
The structure and arrangement of the support modules can be adjusted to adjust the size of the bonding surface, so as to adjust the bonding force in the fixing force, as shown in fig. 4, 5, 6 and 7, and the step of adjusting the size of the bonding surface includes: the length of the support modules 20 in a second direction, which is parallel to the plane of the substrate 1, and/or the spacing distance between the support modules 20 is adjusted. For example, the distance between the second areas 202 is adjusted to adjust the distance between the support modules 20, so as to achieve the purpose of adjusting the fixing force, when the distance between the support modules 20 is smaller, the density of the support modules 20 is higher, and when the distance between the support modules 20 is larger, the number of the support modules 20 is larger, so that the fixing force is larger, when the distance between the support modules 20 is larger, the density of the support modules 20 is lower, and when the distance between the support modules 20 is bonded with the electrode of the light emitting diode chip, the number of the support modules 20 is smaller, so that the fixing force is smaller, for example, the distance between the first areas 201 can be adjusted, so as to adjust the length of the support modules 20 in the second direction, and adjust the area of the end surface of the support modules 20 away from one end of the substrate 1 and the size of the bonding surface.
In order to facilitate bonding of the support module to the electrode of the led chip and to facilitate transferring the bonded led chip from the temporary substrate to the back plate, as shown in fig. 3, the support layer 2 includes a sacrificial layer 21 and a metal layer 22, and the sacrificial layer 21 and the metal layer 22 are sequentially formed on the substrate 1. Illustratively, the support layer 2 comprises: the material of the metal layer 22 for bonding the light emitting diode chip and the sacrificial layer 21 for transferring the light emitting diode chip may be selected from metal materials including one or more alloys of metal aluminum, metal iron, and metal tin, for example, and the material of the sacrificial layer 21 may be selected from a glue material which is convenient for decomposition when the light emitting diode chip needs to be transferred from the transient substrate to the back plate, and the glue material is decomposed to realize the peeling of the light emitting diode chip from the transient substrate, and illustratively, the material of the sacrificial layer 21 may be selected from gallium nitride. As shown in fig. 8, the step of etching the support layer to form a plurality of support modules disposed at intervals on the second region includes:
s301: forming a photoresist layer on the metal layer;
s302: patterning the photoresist layer to form a plurality of photoresist units which are arranged at intervals on the second area;
s303: and etching the metal layer and the sacrificial layer on the first area by taking the photoresist unit as a mask so as to form a plurality of support modules which are arranged at intervals on the second area. As shown in fig. 4, 10 and 11, in step S303, it is exemplarily illustrated that a plurality of the photoresist units 30, the metal layers 22 and the sacrificial layers 21 are etched through an etching process, for example, the metal layers 22 and the sacrificial layers 21 on the first region are etched by dry etching (plasma) using the photoresist units 30 as a mask, the dry etching may include sputter etching or chemical etching, and when the etching is completed, the photoresist units 30 are etched, and the metal layers 22 and the sacrificial layers 21 between the photoresist units 30 are sequentially etched, forming a support module 20 disposed at intervals, the support module 20 including metal units 220 and sacrificial units 210, the metal units 220 being connected to the sacrificial units 210, and the sacrificial units 210 being connected to the substrate 1. The end surface of the support module 20 away from the substrate 1 provides a fixing force for the light emitting diode chip, and the distance between the support modules 20 and the bonding surface are adjusted to adjust the fixing force.
As described in fig. 4 and 9, in step S301, it is exemplarily illustrated that the photoresist layer 3 may be formed by spin-coating a photoresist on the metal layer 22, for example, spin-coating a positive photoresist, and for example, spin-coating a negative photoresist. As shown in fig. 4, 9 and 10, in step S302, it is exemplarily illustrated that a plurality of photoresist units are formed on the second region 202 at intervals by performing a patterning process on the photoresist layer 3. For example, a positive photoresist may be spin-coated to facilitate formation of an exposure pattern on photoresist layer 3 by exposure and development, for example, first region 201 may be exposed, developed and then first region 201 may be cleaned to leave second region 202, and for example, a negative photoresist may be spin-coated to expose second region 202, developed and then first region 201 may be cleaned to leave second region 202.
In order to realize adjustment of the bonding surface, in the etching process, the structure and arrangement of the formed photoresist units 30 are controlled, as shown in fig. 4, 9, 10 and 11, when the photoresist layer 3 is a positive photoresist layer, the first region 201 is exposed and developed, the positive photoresist of the first region 201 is decomposed after exposure, dissolved and removed by development, and the exposure area and/or the interval of the first region 201 is controlled to adjust the size and/or interval of the formed photoresist units 30, so that a plurality of photoresist units 30 are formed on the second region 202 at intervals. For example, the exposure area of the first region 201 is controlled to increase or decrease the exposure area, thereby decreasing or increasing the size of the photoresist unit 30. For example, the pitch of the first region 201 is increased or decreased, and thus the pitch and size of the photoresist unit 30 are increased or decreased. When the photoresist layer 3 is a negative photoresist layer, the second region 202 is exposed and the first region 201 is developed, the negative photoresist of the second region 202 is cured after exposure, the photoresist of the first region 201 is dissolved and removed by development, and the exposure area and/or the spacing of the second region 202 is controlled to adjust the size and/or the spacing of the formed photoresist units 30, so that a plurality of photoresist units 30 with controllable spacing are formed on the second region 202. For example, the exposure area of the second region 202 is controlled to increase or decrease the exposure area, thereby increasing or decreasing the size of the photoresist unit 30. For example, the pitch of the second region 202 is increased or decreased, and thus the pitch or size of the photoresist unit 30 is increased or decreased.
In order to ensure that the transient substrate has uniform and consistent fixing force on the light emitting diode chip, as shown in fig. 11, a plurality of support modules 20 are equidistantly arranged on the substrate 1 at intervals, and the spacing between the support modules 20 can be adjusted to adjust the bonding number of the support modules 20 and the light emitting diode chip, so that the fixing force of the light emitting diode chip and the transient substrate is adjusted, the uniformly arranged support modules 20 provide uniform fixing force, and the light emitting diode chip is ensured to have high structural consistency on the transient substrate. In some embodiments, the adhesive materials with different material characteristics can be selected as the material of the adhesive layer according to the requirement of the fixing force, wherein the material of the adhesive layer comprises one of polyimide or polyurethane, or a mixture thereof. For example, the material of the adhesion layer may include Polyimide (PI), a polymer containing an imide ring (-CO-N-CO-) on the main chain of Polyimide, an organic polymer material having good insulation properties, and for example, the material of the adhesion layer may include Polyurethane (PU), a polymer containing a repeating-HNCOO-structural unit on the main chain thereof, typically obtained by addition polymerization of polyisocyanate and a polyol polymer, or the like, and the ratio of NCO to OH in the polymer may be changed to obtain Polyurethane having a certain elasticity, thermosetting property, thermoplastic property, and good insulation properties.
As shown in fig. 10, in order to facilitate the decomposition of the sacrificial layer 21 and the connection of the support module to the substrate 1 by the sacrificial layer 21, the material of the sacrificial layer 21 includes gallium nitride, for example, the sacrificial layer 21 may be decomposed by a Laser Lift-off (LLO) technique, and the connection between the gallium nitride and the substrate 1 may be decomposed by Laser energy, so that the light emitting diode chip carried on the substrate 1 may be selectively peeled off, and the light emitting diode may be directionally peeled off.
The present invention also provides a method for manufacturing a display device, as shown in fig. 12, for improving the problem of inconvenient adjustment of the fixing force, including:
s10, providing a growth substrate, wherein a plurality of light emitting diode chips to be transferred are arranged on the growth substrate;
s20, providing a transient substrate, forming a supporting layer on a substrate of the transient substrate, dividing the supporting layer into a first region and a second region which are arranged at intervals, wherein in the process of dividing the regions, the distance between two adjacent first regions and/or two adjacent second regions is adjusted according to the fixing force required by a light-emitting diode chip to be transferred, and etching the first region to form a plurality of supporting modules which are arranged at intervals on the second region;
s30, aligning the growth substrate with the transient substrate, and bonding the electrode of the light emitting diode chip with the support module;
and S40, peeling the light emitting diode chip from the growth substrate.
As shown in fig. 13, in step S10, it is exemplarily illustrated that a growth substrate 5 is provided, and a side of the led chip 6 away from the electrode is connected to the growth substrate 5, so that the growth substrate 5 drives the led chip 6 to move above the transient substrate 10.
As shown in fig. 14, in step S20, the supporting layer 2 is divided into a first area 201 and a second area 202 that are disposed at intervals, where the distance between two adjacent first areas 201 and/or two adjacent second areas 202 is adjusted during the area division. For example, a mask pattern may be provided by using a mask to pattern the support layer 2 to form a region to be etched and a non-etched region, i.e., the first region 201 and the second region 202, and for the first region 201, the shape of the pattern in the mask may be changed, so that the space between the formed first regions 201 is increased or decreased, and thus the size of the second region 202 is increased or decreased, or so that the space between the formed second regions 202 is increased or decreased, and thus the size of the first region 201 is increased or decreased.
As shown in fig. 14 and 15, in step S30, it is exemplarily illustrated that the electrodes 61 of the light emitting diode chips 6 on the growth substrate 5 are aligned with the transient substrate by moving the growth substrate 5 to satisfy the requirements of carrying and fixing the light emitting diode chips on the transient substrate, and the electrodes 61 of the light emitting diode chips 6 are bonded with the support module 20.
As shown in fig. 15, the step of bonding the electrode 61 of the led chip 6 to the support module 20 further includes:
the adhesion layer 4 is formed on the substrate 1, and the support module 20 is the same length as the adhesion layer 4 in a first direction including a direction away from the substrate 1. For example, the first direction is a direction perpendicular to the substrate 1. The electrodes 61 of the led chip 6 are bonded to the support module 20 and the adhesive layer 4, respectively. For example, the adhesion layer 4 and the supporting modules 20 arranged at intervals can jointly generate a fixing force on the light emitting diode chip through the same end face, the fixing force comprises a material adhesion force between the adhesion layer 4 and the electrode of the light emitting diode chip, the fixing force also comprises a bonding force between the supporting modules 20 and the electrode of the light emitting diode chip, the light emitting diode chip can be jointly fixed through the adhesion force and the bonding force, and the size of the fixing force between the transient substrate and the light emitting diode chip can be controlled through the material selection of the adhesion layer 4 and the size of the bonding surface, so that the threshold range capable of adjusting the fixing force is enlarged, and the fixing force can meet the requirements in more practical application scenes.
As shown in fig. 15 and 16, after the alignment and bonding of the led chip 6 on the growth substrate 5 and the temporary substrate are completed, the growth substrate 5 and the led chip 6 may be peeled off, or the adhesion layer 4 may be removed.
In the Micro-LED manufacturing process, the light emitting diode chip is further transferred from the transient substrate to the back plate, and the electrode of the light emitting diode chip is bonded with the bonding pad on the driving circuit of the back plate, and in the bonding process, the electrode is easy to be short-circuited, as shown in fig. 17, the manufacturing method of the display device further includes:
s21: providing a transfer substrate, and attaching the transfer substrate to the light emitting diode chip;
s31: aligning the light emitting diode chip and a support module with the back plate by moving the transfer substrate;
s41: and bonding the corresponding bonding pads on the backboard with the electrode of the light-emitting diode chip and the supporting module respectively.
As shown in fig. 18 and 19, in step S21, an exemplary material of the transfer substrate 7 for attaching one surface of the led chip may be Polydimethylsiloxane (PDMS), and the led chip 6 carried on the temporary substrate is transferred by adsorption of the Polydimethylsiloxane.
As shown in fig. 18 and 19, in step S21, the transfer substrate 7 is moved toward the temporary substrate, and the transfer substrate 7 is attached to the light emitting diode chip 6.
As shown in fig. 20 and 21, in step S31, it is exemplarily illustrated that the transfer of the led chip 6 from the temporary substrate to the back plate 8 is completed by peeling the led chip 6 on the temporary substrate and the supporting module, such as the metal unit 220 connected to the electrode 61 of the led chip 6 in the peeled state, by the transfer substrate 7, and moving the led chip 6 to the corresponding position of the back plate 8. For example, the led chip 6 is moved by the transfer substrate 7, and the electrodes 61 and the support module thereof are aligned with the pads 81 of the driving circuit on the back plate 8.
As shown in fig. 22, in step S41, the electrode 61 and the support module are bonded to the bonding pad 81, for example, by soldering, the solder or the adhesive material is limited between the support modules disposed on the electrode 61 at intervals, so that the solder or the adhesive material is wetted, and the short circuit problem occurring during soldering is improved, and for example, the electrode 61 and the metal unit 220 are bonded to the bonding pad 81, and the solder is limited between the adjacent metal units 220, so that the solder is wetted, and the short circuit problem occurring during soldering is improved.
In some embodiments, step S31 includes:
s311: the support module comprises a metal unit and a sacrificial unit, wherein the metal unit is connected with the sacrificial unit, the metal unit is arranged far away from the substrate, and the sacrificial unit is arranged near the substrate and is used for decomposing the sacrificial unit;
s312: and respectively aligning the electrodes of the light emitting diode chip and the corresponding metal units with the backboard through the transfer substrate.
As shown in fig. 18, in step S311, for example, the support module 20 includes: the metal unit 220 for bonding the led chip and the sacrificial unit 210 for transferring the led chip may be made of a metal material, for example, the metal material may include one or more alloys of metal aluminum, metal iron, and metal tin, for example, the sacrificial unit 210 may be made of a glue material that is convenient for decomposition, when the led chip needs to be transferred from the transient substrate to the back plate, the glue material is decomposed to realize the peeling of the led chip and the transient substrate, for example, the material of the sacrificial unit 210 may be made of gallium nitride, and the junction between the led chip to be transferred and the transient substrate may be decomposed by irradiation with LLO technology.
As shown in fig. 18 and 22, in step S312, for example, the electrode 61 and the corresponding metal unit 220 are bonded to the bonding pad 81, for example, by soldering, so that the solder or the adhesive material can be limited between the support modules arranged at intervals to avoid the electrode 61, and the solder or the adhesive material is wetted, thereby improving the short circuit problem in the soldering process.
In some embodiments, the fixing force may be provided according to the transient substrate, or the fixing force required for connecting the led chip with the transient substrate is selected to be provided by the adhesion layer and the support module together, so that the adhesion layer needs to be removed before the transfer of the led is performed, for example, the step S21 includes:
and removing the adhesion layer, wherein the adhesion layer is arranged on the substrate, and the length of the support module and the adhesion layer in a first direction is the same, and the first direction comprises a direction away from the substrate. In some implementations, for example, the adhesion layer is removed by an etching process, and for example, a plasma etching (Inductively Coupled Plasma, ICP) is selected as the etching process, where the ICP is a technique of etching the surface of the material by high-density plasma bombardment generated by gas glow discharge, so as to remove the adhesion layer attached to the substrate and the support module, so that the transfer of the light emitting diode chip from the transient substrate to the back plate is completed by transferring the substrate.
The invention also provides a display device, which comprises a back plate and a plurality of light-emitting diode chips, wherein the electrodes of the light-emitting diode chips are provided with supporting modules, the supporting modules are arranged at intervals, the back plate is provided with a driving circuit, and bonding pads on the driving circuit are bonded with the electrodes and the corresponding supporting modules.
As shown in fig. 23, the display device 9 illustratively includes a back plate 8 and a plurality of display units 91, wherein the back plate is provided with a driving circuit, the display units include light emitting diode chips, and the electrodes of the light emitting diode chips are provided with support modules, and the electrodes and the corresponding support modules are bonded with bonding pads on the driving circuit. In some embodiments, each display unit 91 includes different types of light emitting diode chips, for example, the display unit 91 includes at least one red chip 911, at least one green light emitting diode chip 912, and at least one blue light emitting diode chip 913, and each type of light emitting diode chip on the display unit 91 is bonded to a corresponding pad on the driving circuit, and is controlled by a signal through the driving circuit on the back plate 8, so as to realize signal control such as lighting or turning off, increasing brightness or decreasing brightness, increasing saturation or decreasing saturation of each light emitting diode chip in the display unit 91, and further realize display of a specific color, a specific brightness or a specific saturation by the display unit 91. Bonding the electrode and the supporting module with the bonding pad respectively, for example, bonding by a welding mode, can limit welding flux or glue material between the supporting modules arranged at intervals on the electrode, has an infiltration effect on the welding flux or glue material, improves the problem of short circuit in the welding process, ensures the uniformity of the quality of the light-emitting diode chip, and avoids bad points generated by the display unit or avoids color, brightness or saturation deviation.
It is to be understood that the invention is not limited in its application to the examples described above, but is capable of modification and variation in light of the above teachings by those skilled in the art, and that all such modifications and variations are intended to be included within the scope of the appended claims.
Claims (13)
1. A method of manufacturing a transient substrate, comprising:
providing a substrate;
forming a support layer on the substrate;
dividing the supporting layer into a first region and a second region which are arranged at intervals, wherein in the dividing process, the distance between two adjacent first regions and/or two adjacent second regions is adjusted according to the fixing force required by the light-emitting diode chip to be transferred;
etching the first region to form a plurality of support modules which are arranged at intervals on the second region.
2. The method of manufacturing a transient substrate of claim 1, wherein the step after forming a plurality of support modules disposed at intervals on the second region comprises:
an adhesion layer is formed on the substrate, and the support module and the adhesion layer have the same length in a first direction, wherein the first direction comprises a direction away from the substrate.
3. The method of claim 1, wherein the step of forming a support layer on the substrate comprises:
a sacrificial layer and a metal layer are sequentially formed on the substrate.
4. The method of manufacturing a transient substrate of claim 3, wherein the step of etching the first region to form a plurality of support modules disposed at intervals on the second region comprises:
forming a photoresist layer on the metal layer, developing the photoresist layer corresponding to the first region to form a plurality of photoresist units arranged at intervals on the second region;
and etching the metal layer and the sacrificial layer on the first area by taking the photoresist unit as a mask so as to form a plurality of support modules which are arranged at intervals on the second area.
5. The method of claim 4, wherein the photoresist layer is a positive photoresist layer, the first region is exposed and developed, and the size and/or pitch of the photoresist cells formed are controlled.
6. The method of claim 4, wherein the photoresist layer is a negative photoresist layer, the second region is exposed and the first region is developed, and the size and/or pitch of the photoresist units formed are controlled.
7. The method of claim 1, wherein a plurality of the support modules are equidistantly spaced on the substrate.
8. A method of manufacturing a display device, comprising:
providing a growth substrate, wherein a plurality of light emitting diode chips to be transferred are arranged on the growth substrate;
providing a transient substrate, forming a supporting layer on a substrate of the transient substrate, carrying out region division on the supporting layer to form a first region and a second region which are arranged at intervals, wherein in the region division process, the distance between two adjacent first regions and/or two adjacent second regions is adjusted according to the fixing force required by a light-emitting diode chip to be transferred, and etching the first regions to form a plurality of supporting modules arranged at intervals on the second regions;
aligning the growth substrate with the transient substrate, and bonding the electrodes of the light emitting diode chip with the support module;
and stripping the light emitting diode chip from the growth substrate.
9. The method of manufacturing a display device according to claim 8, wherein the step of bonding the electrode of the light emitting diode chip to the support module comprises, before:
an adhesion layer is formed on the substrate, and the support module is the same length as the adhesion layer in a first direction, the first direction including a direction away from the substrate.
10. The method of manufacturing a display device according to claim 9, wherein the step of bonding the electrode of the light emitting diode chip to the support module further comprises:
and bonding the electrodes of the light emitting diode chip with the supporting module and the adhesion layer respectively.
11. The method for manufacturing a display device according to any one of claims 8 to 10, further comprising:
providing a transfer substrate, and attaching the transfer substrate to the light emitting diode chip;
aligning the light emitting diode chip and the support module with a back plate through the transfer substrate;
and bonding the corresponding bonding pads on the backboard with the electrode of the light-emitting diode chip and the supporting module respectively.
12. The method of manufacturing a display device according to claim 11, wherein,
the support module comprises a metal unit and a sacrificial unit, wherein the metal unit is connected with the sacrificial unit, the metal unit is arranged far away from the substrate, and the sacrificial unit is arranged near the substrate and is used for decomposing the sacrificial unit;
and respectively aligning the electrodes of the light emitting diode chips and the corresponding metal units with the back plate by moving the transfer substrate.
13. The method of manufacturing a display device according to claim 11, wherein the step of providing a transfer substrate and bonding the transfer substrate to the light emitting diode chip comprises, prior to: and removing the adhesive layer, wherein the adhesive layer is arranged on the substrate, and the length of the support module and the adhesive layer in a first direction is the same, and the first direction comprises a direction away from the substrate.
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