CN115993516B - Method and system for measuring junction temperature distribution inside crimping type power semiconductor device - Google Patents
Method and system for measuring junction temperature distribution inside crimping type power semiconductor device Download PDFInfo
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- CN115993516B CN115993516B CN202310286283.XA CN202310286283A CN115993516B CN 115993516 B CN115993516 B CN 115993516B CN 202310286283 A CN202310286283 A CN 202310286283A CN 115993516 B CN115993516 B CN 115993516B
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Abstract
The invention provides a method and a system for measuring junction temperature distribution in a crimping type power semiconductor device, wherein the method comprises the following steps: measuring and obtaining an initial contact force value, a contact force fluctuation value and an initial junction temperature value of each sub-module in the crimping type power semiconductor device; obtaining junction temperature fluctuation values of all the sub-modules according to the initial contact force values and the contact force fluctuation values of all the sub-modules and the functional relation among the initial contact force values, the junction temperature fluctuation values and the contact force fluctuation values of the single sub-modules in the crimping type power semiconductor device; obtaining the internal junction temperature value of each sub-module based on the junction temperature fluctuation value and the initial junction temperature value of each sub-module; and acquiring the internal junction temperature distribution of the crimping type power semiconductor device based on the internal junction temperature value of each sub-module. The invention is suitable for measuring the internal junction temperature distribution of the crimping type power semiconductor device, and does not need to damage the packaging structure of the crimping type power semiconductor device or open the packaging of the device.
Description
Technical Field
The invention belongs to the technical field of semiconductor measurement, and particularly relates to a method and a system for measuring junction temperature distribution in a crimping type power semiconductor device.
Background
The crimp type power semiconductor device uses electrode plates to connect chips in parallel on a large scale, and maintains electrical connection by pressure applied to the electrode plates. The high-voltage high-current operation requirement of the flexible direct-current transmission equipment is met, and the failure short circuit mode of the device also provides necessary guarantee for safe and reliable operation of the flexible direct-current transmission equipment.
The internal junction temperature of the crimping type power semiconductor device directly influences the reliability of the device, and the failure reason of the crimping type power semiconductor device is that the junction temperature is too high or the junction temperature greatly fluctuates to cause the temperature of the crimping type power semiconductor device to be easily influenced by the distribution of contact pressure; in the long-term power cycle process, fretting wear on the surface of the material can also influence the internal contact parameters of the device, so that the internal temperature distribution of the crimping type power semiconductor device is uneven, and the device can fail under severe conditions. The internal junction temperature distribution of the device is an important index for representing the health state of the device, and the accurate acquisition of the internal junction temperature distribution of the crimping type power semiconductor device has important significance for device state monitoring and health management.
The prior art for obtaining the internal junction temperature distribution of the crimping type power semiconductor device mainly comprises the following schemes:
(1) contact measurement method: mainly using a thermocouple method and an optical fiber measurement method, placing temperature sensors such as thermocouple optical fibers and the like on a chip, and measuring the junction temperature of a device;
(2) non-contact measurement method: mainly based on infrared measurement, the device packaging structure is required to be destroyed in measurement, and after the chip is leaked, the junction temperature of the device is measured;
(3) temperature-sensitive electrical parameter method: mainly using a small current method, and obtaining junction temperature distribution in the device by measuring on-resistance distribution of each chip in the device.
The prior art solutions include the following drawbacks:
(1) contact measurement method: the packaging structure of the device needs to be destroyed, a temperature sensor is placed in the device, and junction temperature distribution measurement is carried out;
(2) non-contact measurement method: the packaging structure of the device needs to be destroyed, and junction temperature distribution measurement is carried out after the chip in the device leaks out;
(3) temperature-sensitive electrical parameter method: the internal grid PCB of the device needs to be redesigned, and is not suitable for junction temperature distribution measurement of practical universal devices.
Disclosure of Invention
In order to solve at least one technical problem in the background art, the invention provides a method for measuring the internal junction temperature distribution of a crimping type power semiconductor device, which indirectly obtains the internal junction temperature distribution of the crimping type power semiconductor device by measuring the contact force in the working process of the device by utilizing the thermal expansion principle of the internal material of the crimping type power semiconductor device; therefore, the junction temperature distribution in the device can be indirectly measured by measuring the contact force value of each sub-module in the crimping type power semiconductor.
According to a first aspect of the present invention, there is provided a method for measuring junction temperature distribution inside a crimping type power semiconductor device, the method comprising:
measuring and obtaining an initial contact force value, a contact force fluctuation value and an initial junction temperature value of each sub-module in the crimping type power semiconductor device;
obtaining junction temperature fluctuation values of all the sub-modules according to the initial contact force values and the contact force fluctuation values of all the sub-modules and the functional relation among the initial contact force values, the junction temperature fluctuation values and the contact force fluctuation values of the single sub-modules in the crimping type power semiconductor device;
obtaining the internal junction temperature value of each sub-module based on the junction temperature fluctuation value and the initial junction temperature value of each sub-module;
and acquiring the internal junction temperature distribution of the crimping type power semiconductor device based on the internal junction temperature value of each sub-module.
Further, the method further comprises:
measuring to obtain initial measurement data of the single sub-module when no current is applied to the single sub-module, the initial measurement data being used to characterize the initial contact force value;
applying current to the single sub-module, and measuring to obtain fluctuation measurement data of the single sub-module, wherein the fluctuation measurement data is used for representing a junction temperature fluctuation value and the contact force fluctuation value corresponding to the junction temperature fluctuation value;
and performing curve fitting on the initial measurement data and the fluctuation measurement data of the single sub-module to obtain a functional relation among an initial contact force value, a junction temperature fluctuation value and a contact force fluctuation value of the single sub-module in the crimping type power semiconductor device.
Further, the measuring to obtain the initial contact force, the contact force fluctuation value and the initial junction temperature value of each sub-module in the crimping type power semiconductor device comprises the following steps:
measuring an initial contact force value and a contact force fluctuation value of each sub-module by using a first non-invasive measuring device;
and measuring the initial junction temperature value of each sub-module by using a second non-invasive measuring device.
Further, the measuring the initial contact force value and the contact force fluctuation value of each sub-module by using the first non-invasive measuring device includes:
and when no current is applied to each sub-module, measuring the contact force of each sub-module at a first time point through the first non-invasive measuring device to obtain an initial contact force value of each sub-module.
Further, the measuring the initial contact force value and the contact force fluctuation value of each sub-module by using the first non-invasive measuring apparatus further includes:
when current is applied to each sub-module, measuring each sub-module at a second time point through the first non-invasive measuring device to obtain a contact force value of each sub-module;
and calculating the contact force fluctuation value corresponding to each sub-module based on the initial contact force value and the contact force value of each sub-module.
Further, the measuring the initial junction temperature value of each sub-module by using the second non-invasive measuring device includes:
and when no current is applied to each sub-module, measuring each sub-module at a first time point by the second non-invasive measuring device to obtain an initial junction temperature value of each sub-module.
Further, the first non-invasive measurement device is an ultrasonic measurement module;
the second non-invasive measurement device is a heat sink temperature measurement module.
According to a second aspect of the present invention, there is also provided a system for measuring junction temperature distribution inside a crimping type power semiconductor device, the system comprising:
the measuring module is used for measuring and obtaining an initial contact force value, a contact force fluctuation value and an initial junction temperature value of each sub-module in the crimping type power semiconductor device;
the junction temperature fluctuation value acquisition module is used for acquiring junction temperature fluctuation values of all the sub-modules according to the initial contact force values and the contact force fluctuation values of all the sub-modules and the functional relation among the initial contact force values, the junction temperature fluctuation values and the contact force fluctuation values of the single sub-modules in the crimping type power semiconductor device;
the internal junction temperature value acquisition module is used for acquiring the internal junction temperature value of each sub-module based on the junction temperature fluctuation value and the initial junction temperature value of each sub-module;
and the internal junction temperature distribution acquisition module is used for acquiring the internal junction temperature distribution of the crimping type power semiconductor device based on the internal junction temperature value of each sub-module.
Further, the system further comprises:
the function acquisition module is used for measuring and acquiring initial measurement data of the single sub-module when no current is applied to the single sub-module, wherein the initial measurement data is used for representing the initial contact force value;
applying current to the single sub-module, and measuring to obtain fluctuation measurement data of the single sub-module, wherein the fluctuation measurement data is used for representing a junction temperature fluctuation value and the contact force fluctuation value corresponding to the junction temperature fluctuation value;
and performing curve fitting on the initial measurement data and the fluctuation measurement data of the single sub-module to obtain a functional relation among an initial contact force value, a junction temperature fluctuation value and a contact force fluctuation value of the single sub-module in the crimping type power semiconductor device.
Further, the measurement module includes:
a measuring device module for measuring the initial contact force value and the contact force fluctuation value of each sub-module by using a first non-invasive measuring device;
and measuring the initial junction temperature value of each sub-module by using a second non-invasive measuring device.
The invention realizes the following technical effects:
1. the internal junction temperature distribution measurement of the crimping type power semiconductor device is realized without damaging the packaging structure of the device or opening the packaging of the device, and the application range of the internal junction temperature distribution measurement of the crimping type power semiconductor device is wider;
2. the invention is suitable for the reliability test of the crimping type power semiconductor device, and can be applied to the state monitoring, the device screening and the like of the crimping type power semiconductor device under the working condition;
3. the method solves the problem that the traditional contact type measurement method and the temperature-sensitive electrical parameter method are difficult to implement due to the compact and stacked packaging structure of the crimping type power semiconductor device.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort to a person skilled in the art.
FIG. 1 is a schematic diagram of a method for measuring junction temperature distribution in a crimping type power semiconductor device according to the present invention;
fig. 2 is a schematic diagram of an internal junction temperature distribution measurement system of a crimping type power semiconductor device in the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Fig. 1 is a schematic diagram of a method for measuring junction temperature distribution in a crimping type power semiconductor device according to an embodiment of the present invention, and as shown in fig. 1, the method for measuring junction temperature distribution in a crimping type power semiconductor device includes:
step S101, measuring and obtaining an initial contact force value, a contact force fluctuation value and an initial junction temperature value of each sub-module in the crimping type power semiconductor device;
step S102, obtaining junction temperature fluctuation values of all sub-modules according to the initial contact force values and contact force fluctuation values of all the sub-modules and the functional relation among the initial contact force values, junction temperature fluctuation values and contact force fluctuation values of the single sub-modules in the crimping type power semiconductor device;
step S103, obtaining the internal junction temperature value of each sub-module based on the junction temperature fluctuation value and the initial junction temperature value of each sub-module;
step S104, based on the internal junction temperature value of each sub-module, the internal junction temperature distribution of the crimping type power semiconductor device is obtained.
In the present embodiment, a crimping type semiconductor device that can realize a method of measuring a junction temperature distribution inside the crimping type power semiconductor device includes: a power semiconductor device including a contact surface is commonly used for a crimp-type IGBT device, a crimp-type SiC device, a thyristor device, and the like.
The internal junction temperature distribution of the crimping type power semiconductor device can be obtained by the following method:
measuring an initial contact force value, a contact force fluctuation value and an initial junction temperature value of each sub-module in the crimping type power semiconductor device by using a non-invasive device;
obtaining junction temperature fluctuation values of all sub-modules according to initial contact force values and contact force fluctuation values of all the sub-modules obtained by measurement of a non-invasive device and the functional relation of the initial contact force values, junction temperature fluctuation values and contact force fluctuation values of the single sub-modules in the crimping type power semiconductor device; the crimping power semiconductor device may be composed of a plurality of individual sub-modules.
The device for measuring the initial measurement data and the fluctuation measurement data is not limited, and any non-invasive measurement device can be selected according to actual requirements.
Based on a device temperature and pressure measurement experiment platform, measuring through a non-invasive measurement device to obtain initial measurement data of each sub-module in the crimping type power semiconductor device under the condition that no current is applied; based on a device temperature and pressure measurement experiment platform, measuring through a non-invasive measurement device to obtain fluctuation measurement data of each sub-module in the crimping type power semiconductor device under the condition of being applied with current; and then calculating the initial contact force value and the contact force value of each sub-module in the crimping type power semiconductor device to obtain the contact force fluctuation value of each sub-module in the crimping type power semiconductor device.
The functional relation among the initial contact force value, the junction temperature fluctuation value and the contact force fluctuation value of the single sub-module in the crimping type power semiconductor device can be obtained by performing curve fitting on initial measurement data and fluctuation measurement data of the single sub-module in the crimping type power semiconductor device or by finite element simulation calculation or formula deduction, wherein compared with the finite element simulation calculation and formula deduction, the error of the curve fitting mode is smaller, and the obtained functional relation is more accurate.
Calculating the junction temperature fluctuation value and the initial junction temperature value of the single sub-module in the crimping type power semiconductor device through a mathematical formula to obtain the internal junction temperature value of the single sub-module in the crimping type power semiconductor device;
and averaging the internal junction temperature values of the sub-modules to obtain the internal junction temperature distribution of the crimping type power semiconductor device.
In the method for measuring the junction temperature distribution in the crimping type power semiconductor device, the non-invasive device is used for measuring the crimping type power semiconductor device, the device packaging structure is not required to be damaged or the device packaging is not required to be opened, the junction temperature distribution of the crimping type power semiconductor device can be measured, and the application range for measuring the junction temperature distribution in the crimping type power semiconductor device is wider.
Optionally, in order to obtain the function relationship among the initial contact force value, the junction temperature fluctuation value and the contact force fluctuation value of the single sub-module inside the crimping type power semiconductor device, the method further comprises, before step S102:
step S102a, when no current is applied to the single sub-module, measuring to obtain initial measurement data of the single sub-module, wherein the initial measurement data is used for representing an initial contact force value;
step S102b, applying current to the single sub-module, and measuring to obtain fluctuation measurement data of the single sub-module, wherein the fluctuation measurement data are used for representing junction temperature fluctuation values and contact force fluctuation values corresponding to the junction temperature fluctuation values;
step S102c, curve fitting is carried out on the initial measurement data and the fluctuation measurement data of the single sub-module, and a functional relation among the initial contact force value, the junction temperature fluctuation value and the contact force fluctuation value of the single sub-module is obtained.
The functional relation between the initial measurement data and the fluctuation measurement data of the single sub-module can be obtained through curve fitting, finite element simulation calculation or formula deduction, wherein compared with the finite element simulation calculation and formula deduction modes, the error of the curve fitting mode is smaller, and the obtained functional relation is more accurate.
The device for measuring the initial measurement data and the fluctuation measurement data is not limited, and any non-invasive measurement device can be selected according to actual requirements.
Optionally, in order to obtain the contact force fluctuation value of each sub-module, the step S102 further includes:
step S102d, based on a device temperature and pressure measurement experiment platform, measuring through a non-invasive measurement device to obtain initial measurement data of each sub-module under the condition that no current is applied;
step S102e, measuring by a non-invasive measuring device based on a device temperature and pressure measurement experimental platform to obtain fluctuation measurement data of each sub-module under the condition of applied current;
step S102f, calculating the initial contact force value and the contact force value of each sub-module to obtain the contact force fluctuation value of each sub-module.
In this embodiment, each sub-module is arranged in parallel to form a pressure-welding type power semiconductor device, and the internal junction temperature distribution of the pressure-welding type power semiconductor device can be indirectly obtained by measuring the internal junction temperature value of each sub-module through a non-invasive measurement method.
Averaging the internal junction temperature values of all the sub-modules forming the crimping type power semiconductor device; the internal junction temperature distribution of the crimping type power semiconductor device can be obtained according to the internal junction temperature average value of each sub-module.
Alternatively, in order to measure the internal junction temperature distribution of the crimping type power semiconductor device, the internal junction temperature distribution of the crimping type power semiconductor device may be measured by an invasive measurement method; invasive measurements may include contact, non-contact, or temperature sensitive electrical parameters.
Compared with an invasive measurement method, the method for measuring by using the non-invasive measurement device does not need to damage the packaging structure of the device, has a wider application range, and has important significance for monitoring and health management of the crimping type power semiconductor device; meanwhile, the problem that the traditional contact type measurement method and the temperature-sensitive electrical parameter method are difficult to implement due to the compact and stacked packaging structure of the crimping type power semiconductor device is solved.
Optionally, in step S101, measuring and obtaining an initial contact force value, a contact force fluctuation value, and an initial junction temperature value of each sub-module in the crimping power semiconductor device includes:
measuring an initial contact force value and a contact force fluctuation value of each sub-module by using a first non-invasive measuring device;
and measuring the initial junction temperature value of each sub-module by using a second non-invasive measuring device.
Further, in step S101, measuring and obtaining the initial contact force value, the contact force fluctuation value and the initial junction temperature value of each sub-module in the crimping type power semiconductor device further includes:
in step S101a, when no current is applied to each sub-module, the contact force of each sub-module is measured at a first time point by a first non-invasive measurement device, so as to obtain an initial contact force value of each sub-module.
Further, in step S101, measuring and obtaining the initial contact force value, the contact force fluctuation value and the initial junction temperature value of each sub-module in the crimping type power semiconductor device further includes:
step S101b, when current is applied to each sub-module, measuring each sub-module at a second time point by a first non-invasive measuring device to obtain a contact force value of each sub-module;
and calculating the contact force fluctuation value of each sub-module based on the initial contact force value and the contact force value of each sub-module.
In this embodiment, the first non-invasive measurement device is used to measure each sub-module without damaging the device package structure or opening the device package, so as to obtain the initial contact force value and the contact force value of each sub-module.
Further, in step S101, measuring and obtaining the initial contact force value, the contact force fluctuation value and the initial junction temperature value of each sub-module in the crimping type power semiconductor device further includes:
in step S101c, when no current is applied to each sub-module, the second non-invasive measurement device measures each sub-module at the first time point to obtain an initial junction temperature value of each sub-module.
In this embodiment, the second non-invasive measurement device is used to measure each sub-module at the first time point, so that the device package structure is not required to be damaged or the device package is not required to be opened, and the initial junction temperature value of each sub-module is obtained.
Further, in step S101, the first non-invasive measurement device is an ultrasonic measurement module;
the second non-invasive measurement device is a heat sink temperature measurement module.
In this embodiment, the first non-invasive measurement device and the second non-invasive measurement device are not limited, and may be selected according to actual requirements or conditions;
optionally, when the initial contact force value, the contact force fluctuation value and the initial junction temperature value of each sub-module are obtained by measurement, the ultrasonic measurement module is used as a first non-invasive measurement device, and the radiator temperature measurement module is used as a second non-invasive measurement device;
the contact force ultrasonic measurement module mainly comprises an ultrasonic probe, an ultrasonic generator and an oscilloscope;
the radiator temperature measurement module mainly comprises a temperature acquisition card, and the initial junction temperature and the junction temperature fluctuation value are obtained by measuring and acquiring the radiator through the radiator temperature measurement module;
when the initial contact force is measured by the contact force measuring module and the initial junction temperature fluctuation is measured and acquired for the radiator, the device packaging structure is not required to be damaged or the device packaging is not required to be opened; for the junction temperature distribution measurement of the crimping type power semiconductor device, the application range of the first non-invasive measuring device and the second non-invasive measuring device is wider, and the crimping type power semiconductor device monitoring and health management method has important significance.
In this embodiment, the contact force value of each sub-module in the crimping power semiconductor device may also be obtained by other measurement methods such as a pressure sensor, a deformation measuring instrument, and an optical fiber sensor;
the initial junction temperature value of each sub-module in the crimping type power semiconductor device can be obtained by measuring the temperature of certain points such as the device inside, the device shell, the heat dissipation system and the like.
Moreover, in order to achieve the above object, the present invention further provides a junction temperature distribution measurement system of a crimping power semiconductor device, and fig. 2 is a schematic diagram of a junction temperature distribution measurement system of a crimping power semiconductor device according to the present invention, as shown in fig. 2, where the junction temperature distribution measurement system of a crimping power semiconductor device according to the present invention includes:
the method comprises the following steps of measuring a module, namely measuring and obtaining an initial contact force value, a contact force fluctuation value and an initial junction temperature value of each sub-module in the crimping type power semiconductor device;
step S102, obtaining junction temperature fluctuation values of all sub-modules according to initial contact force values and contact force fluctuation values of all the sub-modules and the functional relation among the initial contact force values, the junction temperature fluctuation values and the contact force fluctuation values of the single sub-modules in the crimping type power semiconductor device;
an internal junction temperature value obtaining module, wherein step S103 is performed to obtain an internal junction temperature value of each sub-module based on the junction temperature fluctuation value and the initial junction temperature value of each sub-module;
and an internal junction temperature distribution acquisition module, wherein in step S104, the internal junction temperature distribution of the crimping type power semiconductor device is acquired based on the internal junction temperature value of each sub-module.
In the present embodiment, a crimping type semiconductor device that can realize a method of measuring a junction temperature distribution inside the crimping type power semiconductor device includes: a power semiconductor device including a contact surface is commonly used for a crimp-type IGBT device, a crimp-type SiC device, a thyristor device, and the like.
The internal junction temperature distribution of the crimping type power semiconductor device can be obtained by the following method:
measuring an initial contact force value, a contact force fluctuation value and an initial junction temperature value of each sub-module in the crimping type power semiconductor device by using a non-invasive device;
obtaining junction temperature fluctuation values of all sub-modules according to initial contact force values and contact force fluctuation values of all the sub-modules obtained by measurement of a non-invasive device and the functional relation of the initial contact force values, junction temperature fluctuation values and contact force fluctuation values of the single sub-modules in the crimping type power semiconductor device; the crimping power semiconductor device may be composed of a plurality of individual sub-modules.
The device for measuring the initial measurement data and the fluctuation measurement data is not limited, and any non-invasive measurement device can be selected according to actual requirements.
Based on a device temperature and pressure measurement experiment platform, measuring through a non-invasive measurement device to obtain initial measurement data of each sub-module in the crimping type power semiconductor device under the condition that no current is applied; based on a device temperature and pressure measurement experiment platform, measuring through a non-invasive measurement device to obtain fluctuation measurement data of each sub-module in the crimping type power semiconductor device under the condition of being applied with current; and then calculating the initial contact force value and the contact force value of each sub-module in the crimping type power semiconductor device to obtain the contact force fluctuation value of each sub-module in the crimping type power semiconductor device.
The functional relation among the initial contact force value, the junction temperature fluctuation value and the contact force fluctuation value of the single sub-module in the crimping type power semiconductor device can be obtained by performing curve fitting on initial measurement data and fluctuation measurement data of the single sub-module in the crimping type power semiconductor device or by finite element simulation calculation or formula deduction, wherein compared with the finite element simulation calculation and formula deduction, the error of the curve fitting mode is smaller, and the obtained functional relation is more accurate.
Calculating the junction temperature fluctuation value and the initial junction temperature value of the single sub-module in the crimping type power semiconductor device through a mathematical formula to obtain the internal junction temperature value of the single sub-module in the crimping type power semiconductor device;
and averaging the internal junction temperature values of the sub-modules to obtain the internal junction temperature distribution of the crimping type power semiconductor device.
In the method for measuring the junction temperature distribution in the crimping type power semiconductor device, the non-invasive device is used for measuring the crimping type power semiconductor device, the device packaging structure is not required to be damaged or the device packaging is not required to be opened, the junction temperature distribution of the crimping type power semiconductor device can be measured, and the application range for measuring the junction temperature distribution in the crimping type power semiconductor device is wider.
Optionally, in order to obtain a functional relationship among the initial contact force value, the junction temperature fluctuation value and the contact force fluctuation value of the single sub-module inside the crimping type power semiconductor device, the system further comprises a function obtaining module:
step S102a, when no current is applied to the single sub-module, measuring to obtain initial measurement data of the single sub-module, wherein the initial measurement data is used for representing an initial contact force value;
step S102b, applying current to the single sub-module, and measuring to obtain fluctuation measurement data of the single sub-module, wherein the fluctuation measurement data are used for representing junction temperature fluctuation values and contact force fluctuation values corresponding to the junction temperature fluctuation values;
step S102c, curve fitting is carried out on the initial measurement data and the fluctuation measurement data of the single sub-module, and a functional relation among the initial contact force value, the junction temperature fluctuation value and the contact force fluctuation value of the single sub-module is obtained.
The functional relation between the initial measurement data and the fluctuation measurement data of the single sub-module can be obtained through curve fitting, finite element simulation calculation or formula deduction, wherein compared with the finite element simulation calculation and formula deduction modes, the error of the curve fitting mode is smaller, and the obtained functional relation is more accurate.
The device for measuring the initial measurement data and the fluctuation measurement data is not limited, and any non-invasive measurement device can be selected according to actual requirements.
Optionally, in order to obtain the contact force fluctuation value of each sub-module, the step S102 further includes:
step S102d, based on a device temperature and pressure measurement experiment platform, measuring through a non-invasive measurement device to obtain initial measurement data of each sub-module under the condition that no current is applied;
step S102e, measuring by a non-invasive measuring device based on a device temperature and pressure measurement experimental platform to obtain fluctuation measurement data of each sub-module under the condition of applied current;
step S102f, calculating the initial contact force value and the contact force value of each sub-module to obtain the contact force fluctuation value of each sub-module.
In this embodiment, each sub-module is arranged in parallel to form a pressure-welding type power semiconductor device, and the internal junction temperature distribution of the pressure-welding type power semiconductor device can be indirectly obtained by measuring the internal junction temperature value of each sub-module through a non-invasive measurement method.
Averaging the internal junction temperature values of all the sub-modules forming the crimping type power semiconductor device; the internal junction temperature distribution of the crimping type power semiconductor device can be obtained according to the internal junction temperature average value of each sub-module.
Alternatively, in order to measure the internal junction temperature distribution of the crimping type power semiconductor device, the internal junction temperature distribution of the crimping type power semiconductor device may be measured by an invasive measurement method; invasive measurements may include contact, non-contact, or temperature sensitive electrical parameters.
Compared with an invasive measurement method, the method for measuring by using the non-invasive measurement device does not need to damage the packaging structure of the device, has a wider application range, and has important significance for monitoring and health management of the crimping type power semiconductor device; meanwhile, the problem that the traditional contact type measurement method and the temperature-sensitive electrical parameter method are difficult to implement due to the compact and stacked packaging structure of the crimping type power semiconductor device is solved.
Optionally, the measurement module includes:
the measuring device module is used for measuring an initial contact force value and a contact force fluctuation value of each sub-module by using a first non-invasive measuring device;
and measuring the initial junction temperature value of each sub-module by using a second non-invasive measuring device.
Further, in step S101, measuring and obtaining the initial contact force value, the contact force fluctuation value and the initial junction temperature value of each sub-module in the crimping type power semiconductor device further includes:
in step S101a, when no current is applied to each sub-module, the contact force of each sub-module is measured at a first time point by a first non-invasive measurement device, so as to obtain an initial contact force value of each sub-module.
Further, in step S101, measuring and obtaining the initial contact force value, the contact force fluctuation value and the initial junction temperature value of each sub-module in the crimping type power semiconductor device further includes:
step S101b, when current is applied to each sub-module, measuring each sub-module at a second time point by a first non-invasive measuring device to obtain a contact force value of each sub-module;
and calculating the contact force fluctuation value of each sub-module based on the initial contact force value and the contact force value of each sub-module.
In this embodiment, the first non-invasive measurement device is used to measure each sub-module without damaging the device package structure or opening the device package, so as to obtain the initial contact force value and the contact force value of each sub-module.
Further, in step S101, measuring and obtaining the initial contact force value, the contact force fluctuation value and the initial junction temperature value of each sub-module in the crimping type power semiconductor device further includes:
in step S101c, when no current is applied to each sub-module, the second non-invasive measurement device measures each sub-module at the first time point to obtain an initial junction temperature value of each sub-module.
In this embodiment, the second non-invasive measurement device is used to measure each sub-module at the first time point, so that the device package structure is not required to be damaged or the device package is not required to be opened, and the initial junction temperature value of each sub-module is obtained.
Further, in step S101, the first non-invasive measurement device is an ultrasonic measurement module;
the second non-invasive measurement device is a heat sink temperature measurement module.
In this embodiment, the first non-invasive measurement device and the second non-invasive measurement device are not limited, and may be selected according to actual requirements or conditions;
optionally, when the initial contact force value, the contact force fluctuation value and the initial junction temperature value of each sub-module are obtained by measurement, the ultrasonic measurement module is used as a first non-invasive measurement device, and the radiator temperature measurement module is used as a second non-invasive measurement device;
the contact force ultrasonic measurement module mainly comprises an ultrasonic probe, an ultrasonic generator and an oscilloscope;
the radiator temperature measurement module mainly comprises a temperature acquisition card, and the initial junction temperature and the junction temperature fluctuation value are obtained by measuring and acquiring the radiator through the radiator temperature measurement module;
when the initial contact force is measured by the contact force measuring module and the initial junction temperature fluctuation is measured and acquired for the radiator, the device packaging structure is not required to be damaged or the device packaging is not required to be opened; for the junction temperature distribution measurement of the crimping type power semiconductor device, the application range of the first non-invasive measuring device and the second non-invasive measuring device is wider, and the crimping type power semiconductor device monitoring and health management method has important significance.
In this embodiment, the contact force value of each sub-module in the crimping power semiconductor device may also be obtained by other measurement methods such as a pressure sensor, a deformation measuring instrument, and an optical fiber sensor;
the initial junction temperature value of each sub-module in the crimping type power semiconductor device can be obtained by measuring the temperature of certain points such as the device inside, the device shell, the heat dissipation system and the like.
The invention has the beneficial effects that: 1. the junction temperature value of the crimping type power semiconductor device is measured without damaging the packaging structure of the device or opening the packaging of the device, and the application range of the internal junction temperature distribution measurement of the crimping type power semiconductor device is wider;
2. the invention is suitable for the reliability test of the crimping type power semiconductor device, and can be applied to the state monitoring, the device screening and the like of the crimping type power semiconductor device under the working condition;
3. the method solves the problem that the traditional contact type measurement method and the temperature-sensitive electrical parameter method are difficult to implement due to the compact and stacked packaging structure of each sub-module in the crimping type power semiconductor device.
Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention. It will be clearly understood by those skilled in the art that, for convenience and brevity of description, specific working procedures of the apparatus and device described above may refer to corresponding procedures in the foregoing method embodiments, which are not described herein again.
In the embodiments provided in the present invention, it should be understood that the disclosed apparatus and method may be implemented in other manners. For example, the device embodiments described above are merely illustrative.
It will be appreciated by persons skilled in the art that the scope of the invention referred to in the present invention is not limited to the specific combinations of the technical features described above, but also covers other technical features formed by any combination of the technical features described above or their equivalents without departing from the inventive concept. Such as the above-mentioned features and the technical features disclosed in the present invention (but not limited to) having similar functions are replaced with each other.
It should be understood that, the sequence numbers of the steps in the summary and the embodiments of the present invention do not necessarily mean the order of execution, and the execution order of the processes should be determined by the functions and the internal logic, and should not be construed as limiting the implementation process of the embodiments of the present invention.
Claims (6)
1. A method for measuring junction temperature distribution inside a crimping type power semiconductor device, the method comprising:
measuring and obtaining an initial contact force value, a contact force fluctuation value and an initial junction temperature value of each sub-module in the crimping type power semiconductor device;
when no current is applied to each sub-module in the crimping type power semiconductor device, initial measurement data of a single sub-module in the crimping type power semiconductor device are obtained through measurement, and the initial measurement data are used for representing the initial contact force value;
obtaining junction temperature fluctuation values of all the sub-modules according to the initial contact force values and the contact force fluctuation values of all the sub-modules and the functional relation among the initial contact force values, the junction temperature fluctuation values and the contact force fluctuation values of the single sub-modules in the crimping type power semiconductor device;
obtaining the internal junction temperature value of each sub-module based on the junction temperature fluctuation value and the initial junction temperature value of each sub-module;
acquiring internal junction temperature distribution of the crimping type power semiconductor device based on the internal junction temperature value of each sub-module;
the measuring to obtain the initial contact force, the contact force fluctuation value and the initial junction temperature value of each sub-module in the crimping type power semiconductor device comprises the following steps:
measuring an initial contact force value and a contact force fluctuation value of each sub-module by using a first non-invasive measuring device;
measuring the initial junction temperature value of each sub-module by using a second non-invasive measuring device;
the measuring the initial contact force value and the contact force fluctuation value of each sub-module by using the first non-invasive measuring device comprises:
when no current is applied to each sub-module, measuring the contact force of each sub-module at a first time point through the first non-invasive measuring device to obtain an initial contact force value of each sub-module;
when current is applied to each sub-module, measuring each sub-module at a second time point through the first non-invasive measuring device to obtain a contact force value of each sub-module;
and calculating the contact force fluctuation value corresponding to each sub-module based on the initial contact force value and the contact force value of each sub-module.
2. The method according to claim 1, wherein the method further comprises:
applying current to the single sub-module, and measuring to obtain fluctuation measurement data of the single sub-module, wherein the fluctuation measurement data is used for representing a junction temperature fluctuation value and the contact force fluctuation value corresponding to the junction temperature fluctuation value;
and performing curve fitting on the initial measurement data and the fluctuation measurement data of the single sub-module to obtain a functional relation among an initial contact force value, a junction temperature fluctuation value and a contact force fluctuation value of the single sub-module in the crimping type power semiconductor device.
3. The method of claim 1, wherein measuring the initial junction temperature value of each sub-module using a second non-invasive measurement device comprises:
and when no current is applied to each sub-module, measuring each sub-module at a first time point by the second non-invasive measuring device to obtain an initial junction temperature value of each sub-module.
4. The method of claim 1, wherein the first non-invasive measurement device is an ultrasonic measurement module;
the second non-invasive measurement device is a heat sink temperature measurement module.
5. A crimping type power semiconductor device internal junction temperature distribution measurement system, characterized in that the system comprises:
the measuring module is used for measuring and obtaining an initial contact force value, a contact force fluctuation value and an initial junction temperature value of each sub-module in the crimping type power semiconductor device;
the function acquisition module is used for measuring and obtaining initial measurement data of a single sub-module in the crimping type power semiconductor device when no current is applied to each sub-module in the crimping type power semiconductor device, wherein the initial measurement data are used for representing the initial contact force value;
the junction temperature fluctuation value acquisition module is used for acquiring junction temperature fluctuation values of all the sub-modules according to the initial contact force values and the contact force fluctuation values of all the sub-modules and the functional relation among the initial contact force values, the junction temperature fluctuation values and the contact force fluctuation values of the single sub-modules in the crimping type power semiconductor device; the internal junction temperature value acquisition module is used for acquiring the internal junction temperature value of each sub-module based on the junction temperature fluctuation value and the initial junction temperature value of each sub-module;
and the internal junction temperature distribution acquisition module is used for acquiring the internal junction temperature distribution of the crimping type power semiconductor device based on the internal junction temperature value of each sub-module.
6. The system of claim 5, wherein the system further comprises:
applying current to the single sub-module, and measuring to obtain fluctuation measurement data of the single sub-module, wherein the fluctuation measurement data is used for representing a junction temperature fluctuation value and the contact force fluctuation value corresponding to the junction temperature fluctuation value;
performing curve fitting on the initial measurement data and the fluctuation measurement data of the single sub-module to obtain a functional relation among an initial contact force value, a junction temperature fluctuation value and a contact force fluctuation value of the single sub-module in the crimping type power semiconductor device;
a measuring device module for measuring the initial contact force value and the contact force fluctuation value of each sub-module by using a first non-invasive measuring device;
and measuring the initial junction temperature value of each sub-module by using a second non-invasive measuring device.
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| CN108646163B (en) * | 2018-06-22 | 2019-08-06 | 华北电力大学 | A kind of power circulation test system of semiconductor devices |
| DE102019132570A1 (en) * | 2019-12-01 | 2021-06-02 | Danfoss Silicon Power Gmbh | Power module with a pressure sensor |
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| CN213986712U (en) * | 2020-11-02 | 2021-08-17 | 北京工业大学 | Junction temperature real-time monitoring device for single-chip crimping type IGBT device |
| CN115684997A (en) * | 2022-11-01 | 2023-02-03 | 重庆大学 | Method for testing and evaluating short-circuit tolerance capability of crimping packaged power device |
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