CN108646163B - A kind of power circulation test system of semiconductor devices - Google Patents
A kind of power circulation test system of semiconductor devices Download PDFInfo
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- CN108646163B CN108646163B CN201810651955.1A CN201810651955A CN108646163B CN 108646163 B CN108646163 B CN 108646163B CN 201810651955 A CN201810651955 A CN 201810651955A CN 108646163 B CN108646163 B CN 108646163B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
Abstract
The present invention discloses a kind of power circulation test system of semiconductor devices.Power circulation test system includes: controller, driver, at least one test branch, DC power supply and water cooler, every test branch includes a test branch switch and the test concatenated several semiconductor devices to be measured of branch switch, and each semiconductor devices to be measured is connected in series.Power circulation test system provided by the invention can be heated by effectively utilizing the temperature fall time of a tested branch come the device for being tested branch to other, the quantity of semiconductor devices to be measured is more, can greatly improve the testing efficiency of power circulation test system.Simultaneously, since power circulation test system provided by the invention is provided with the test branch of a plurality of parallel connection, therefore, user can carry out the switching of a variety of test functions according to actual needs, can the device to different manufacturers or model test is compared under same test condition.
Description
Technical field
The present invention relates to semiconductor device reliability testing fields, more particularly to a kind of power cycle of semiconductor devices
Test macro.
Background technique
Power semiconductor in the power system using more and more extensive, the electricity in the whole world at least 60% or more at present
It can be controlled by it, it is following under the trend of global energy internet, with extensive new energy power generation grid-connection and electronic vapour
The mobile unpredictable load such as vehicle accesses power grid, this ratio will rise significantly.Therefore, for the research of power semiconductor
Work also becomes hot spot in recent years, especially high-tension high-power semiconductor devices.Simultaneously as alternating current-direct current power grid coexist with
And the continuous of new energy pours in, and certain impact is caused to power grid, this is just to DC grid, especially flexible HVDC transmission system
Reliability more stringent requirements are proposed.It is the high-voltage and high-power power electronic device of representative as the entire change of current using IGBT device
The core stood, reliability become the key of whole system reliability.
It is mainly at present IGBT device applied to the high-power semiconductor devices of flexible HVDC transmission system, same to hour hands
To different application operating condition, there are two types of different packing forms, and one is the encapsulation of conventional welded type, referred to as weld IGBT module,
It is mainly used in the converter valve of modularization multi-level converter (Modular Multi-level Converter, MMC) structure
In；Another kind is that power density is bigger, it is easier to which the crimp type IGBT device for application of connecting is mainly used in flexible direct current system
In dc circuit breaker in.
Power circulation test is that one of most important reliability test of power semiconductor and device factory are preceding most crucial
Reliability Check, basic test principle is as shown in Figure 1, make device liter by applying certain electric current to semiconductor devices to be measured
Then temperature cuts off electric current again and makes semiconductor devices to be measured cooling by water-cooling system, the mistake for back and forth so being heated and being cooled down
Journey is recycled with the reliability for examining device to encapsulate, also referred to as active temperature.Practical power circulation test is exactly to pass through approximate simulation
Semiconductor devices actual operating mode predicts the long-term running life and reliability of device, exposure there may be the problem of with excellent
Change device design and reach scheduled projected life, so the precision of test equipment, efficiency and reliability are then followed as power
The element of ring test experiment most critical.
At present for the power circulation test system of small-power semiconductor devices due to semiconductor devices current class to be measured
Low, required test electric current is small, in parallel can test, the device count that single device can test simultaneously is at most up to 30
(a semiconductor devices maximum 50A electric current to be measured), so testing efficiency is relatively high.And it is directed to electric system and electric locomotive
The electric current of the application of equal high-voltage great-currents, individual devices reaches 3000A or more, then the parallel connection by semiconductor devices to be measured
Test is to improve efficiency the cost that can be not only increased sharply entire test platform, while current source is also unable to reach corresponding test
It is required that.
Therefore, how a kind of power circulation test system of higher large power semiconductor device of testing efficiency is provided, at
The technical issues of for those skilled in the art's urgent need to resolve.
Summary of the invention
The object of the present invention is to provide a kind of power circulation test systems of semiconductor devices, can be by effectively utilizing one
The temperature fall time that item is tested branch heats come the device for being tested branch to other, and the quantity of semiconductor devices to be measured is more,
The testing efficiency of power circulation test system can be greatlyd improve.Simultaneously as power circulation test system provided by the invention
System is provided with the test branch of a plurality of parallel connection, and therefore, user can carry out the switching of a variety of test functions according to actual needs, can
Test is compared under same test condition to the device of different manufacturers or model.
To achieve the above object, the present invention provides following schemes:
A kind of power circulation test system of semiconductor devices, the power circulation test system include: controller, driving
Device, at least one test branch, DC power supply and water cooler, wherein
Every test branch connect to form closed circuit with the DC power supply, and the DC power supply is used for described
It tests branch and constant current is provided；
Every test branch include: a test branch switch, with the test branch switch it is concatenated it is several to
Semiconductor devices is surveyed, and each semiconductor devices to be measured is connected in series；
The controller is connect with driver, and the controller is used to generate the pulse letter of each test branch switch
Number；
The driver is connect with each test branch switch, and the driver is according to each pulse signal generation pair
The test switch drive pulse answered, the test switch drive pulse is for driving the corresponding test branch switch；
The water cooler corresponds to the test branch setting, and the water cooler is for cooling down each semiconductor device to be measured
Part.
Optionally, one and only one test branch switch conducting of each moment, and a power circulation test period
Interior, each test branch switch is both turned on once.
Optionally, the turn-on time of each test branch switch is T/n, and the test of each test branch switch
The phase of switch drive pulse is successively advanced or lags T/n, wherein T indicates the power circulation test period, and n indicates test branch
The item number on road.
Optionally, the power circulation test system further includes diverter branch, the diverter branch and the test branch
It is in parallel.
Optionally, the diverter branch includes diverting switch.
Optionally, the power circulation test system further includes source current sensor, wherein
The source current sensor is connected with the DC power supply, and the source current sensor is described straight for detecting
The output electric current in galvanic electricity source；
The controller is connect with the source current sensor, and the controller is used for the output electricity according to DC power supply
The expectation electric current of stream and the corresponding test branch of the test branch switch be currently connected adjusts the electric current of the diverter branch.
Optionally, the power circulation test system further includes the diverter branch current sense connecting with the controller
Device, the diverter branch current sensor are arranged in the diverter branch, and the diverter branch current sensor is for detecting
The electric current of the diverter branch.
Optionally, the power circulation test system further includes difference load current sensor connected to the controller and bears
Carry voltage sensor, wherein
The load current sensor is for detecting the electric current for flowing through the semiconductor devices to be measured；
The load voltage sensor is used to detect the voltage at the semiconductor devices both ends to be measured；
The controller is used for
Obtain the corresponding test branch switch of the test branch it is in the conductive state when, flow through the semiconductor device to be measured
The load voltage of the load current of part and the semiconductor devices both ends to be measured；
Obtain initial junction temperature, junction temperature-saturation voltage drop relation curve and the test branch of the semiconductor devices to be measured
On test branch switch when being in an off state, the saturation voltage drop at the semiconductor devices both ends to be measured；
The power loss of the semiconductor devices to be measured is determined according to the load voltage and the load current；
The reality of the semiconductor devices to be measured is determined according to the junction temperature-saturation voltage drop relation curve and the saturation voltage drop
When junction temperature；
The wink of the semiconductor devices to be measured is determined according to the initial junction temperature, the real-time junction temperature and the power loss
State thermal impedance curve；
The integral structure function and differential structrue of the semiconductor devices to be measured are determined according to the transient thermal impedance curve
Function；
The thermal resistance and thermal capacitance of the semiconductor devices to be measured are determined according to the integral structure function and differential structrue function
With the determination degree of aging for surveying semiconductor devices.
Optionally, the power circulation test system further includes being separately positioned on the inlet and outlet and water outlet of the water cooler
The temperature sensor at place.
Optionally, the power circulation test system further includes the pressure sensor being arranged in the test branch, when
When the semiconductor devices to be measured is crimp type semiconductor devices, the pressure sensor is partly led for be measured described in real-time measurement
The pressure value of body device.
The specific embodiment provided according to the present invention, the invention discloses following technical effects:
The power circulation test system of semiconductor devices provided by the invention includes: controller, driver, at least one survey
Try branch, DC power supply and water cooler, wherein every test branch includes a test branch switch and test branch
Concatenated several semiconductor devices to be measured are switched, and each semiconductor devices to be measured is connected in series.It can be by effectively utilizing one
The temperature fall time that item is tested branch heats come the device for being tested branch to other, and the quantity of semiconductor devices to be measured is more,
The testing efficiency of power circulation test system can be greatlyd improve.Simultaneously as power circulation test system provided by the invention
System is provided with the test branch of a plurality of parallel connection, and therefore, user can carry out the switching of a variety of test functions according to actual needs, can
Test is compared under same test condition to the device of different manufacturers or model.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Obtain other attached drawings.
Fig. 1 is the schematic diagram of power circulation test；
Fig. 2 is the structural block diagram of the power circulation test system for the semiconductor devices that the embodiment of the present invention 1 provides；
Fig. 3 is the structural block diagram for the power circulation test system that the embodiment of the present invention 2 provides；
Fig. 4 is the circuit diagram for the power circulation test system that the embodiment of the present invention 2 provides,
Fig. 5 is the comparative diagram of the test sequence provided of the embodiment of the present invention 2 and variations injunction temperature；
Fig. 6 is the saturation voltage drop for the semiconductor devices to be measured that the embodiment of the present invention 2 provides and the graph of relation of junction temperature；
Fig. 7 is the circuit diagram for the test branch that the embodiment of the present invention 2 provides；
Fig. 8 is the circuit diagram for the diverter branch that the embodiment of the present invention 2 provides；
Fig. 9 is the structure function for the device under test that the embodiment of the present invention 2 provides with the variation diagram of power cycle number.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The object of the present invention is to provide a kind of power circulation test systems of semiconductor devices, can be by effectively utilizing one
The temperature fall time that item is tested branch heats come the device for being tested branch to other, and the quantity of semiconductor devices to be measured is more,
The testing efficiency of power circulation test system can be greatlyd improve.Simultaneously as power circulation test system provided by the invention
System is provided with the test branch of a plurality of parallel connection, and therefore, user can carry out the switching of a variety of test functions according to actual needs, can
Test is compared under same test condition to the device of different manufacturers or model.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
Fig. 2 is the structural block diagram of the power circulation test system for the semiconductor devices that the embodiment of the present invention 1 provides.Such as Fig. 2
It is shown, a kind of power circulation test system of semiconductor devices, which is characterized in that the power circulation test system includes: control
Device 101, the test of driver 102, at least one branch 103, DC power supply 104 and water cooler 105 processed, wherein
Every test branch 103 connect to form closed circuit with the DC power supply 104, the DC power supply 104
For providing constant current to the test branch 103；
Every test branch 103 includes: a test branch switch, concatenated several with the test branch switch
Semiconductor devices to be measured, and each semiconductor devices to be measured is connected in series；
The controller 101 is connect with driver 102, and the controller 101 is for generating each test branch switch
Pulse signal；
The driver 102 is connect with each test branch switch, and the driver 102 is according to each pulse signal
Corresponding test switch drive pulse is generated, the test switch drive pulse is for driving the corresponding test branch to open
It closes；
The corresponding test branch setting of the water cooler 105, the water cooler is for cooling down each semiconductor to be measured
Device.
In order to further increase the testing efficiency of power circulation test system, one and only one test branch of each moment
Switch conduction, and within a power circulation test period, each test branch switch is both turned on once.Specifically, when
When being provided with n item test branch 103, the turn-on time of each test branch switch is T/n, and each test branch is opened
The phase of the test switch drive pulse of pass is successively advanced or lags T/n, wherein T indicates the power circulation test period.Cause
This, can be heated by effectively utilizing the temperature fall time of a tested branch come the device for being tested branch to other, to be measured
The quantity of semiconductor devices is more, can greatly improve the testing efficiency of power circulation test system.Meanwhile above-mentioned test is opened
It is steady that the sequential relationship of pass driving pulse can guarantee that DC power supply DC current during entire power circulation test exports
Qualitative and continuity avoids the switching process repeatedly of DC power supply, substantially increases the service life of DC power supply and transports for a long time
Row reliability.
Different power losses is generated since the difference of semiconductor devices various aspects to be measured will lead to identical load current
Or variations injunction temperature, in order to improve the versatility of power circulation test system, in order to guarantee the consistent of each item test branch,
Power circulation test system provided by the invention further includes diverter branch, and the diverter branch and the test branch circuit parallel connection lead to
Diverter branch is crossed to share extra electric current.Specifically, the diverter branch includes two diverting switch in parallel.
In the present embodiment, the power circulation test system further includes source current sensor and diverter branch current sense
Device, wherein the source current sensor is connected with the DC power supply, and the source current sensor is described straight for detecting
The output electric current in galvanic electricity source 104.The diverter branch current sensor is arranged in the diverter branch, the diverter branch electricity
Flow sensor is used to detect the electric current of the diverter branch.The controller 101 respectively with the source current sensor and institute
The connection of diverter branch current sensor is stated, the controller 101 is used for output electric current and current conducting according to DC power supply 104
The expectation electric current of the corresponding test branch 103 of test branch switch adjust the electric current of the diverter branch.
In order to overcome the defect of offline evaluation during conventional power circulation test, power cycle provided by the invention is surveyed
Test system further includes difference load current sensor connected to the controller and load voltage sensor, wherein
The load current sensor is for detecting the electric current for flowing through the semiconductor devices to be measured；
The load voltage sensor is used to detect the voltage at the semiconductor devices both ends to be measured；
The controller is used for
Obtain the corresponding test branch switch of the test branch it is in the conductive state when, flow through the semiconductor device to be measured
The load voltage of the load current of part and the semiconductor devices both ends to be measured；
Obtain initial junction temperature, junction temperature-saturation voltage drop relation curve and the test branch of the semiconductor devices to be measured
On test branch switch when being in an off state, the saturation voltage drop at the semiconductor devices both ends to be measured；
The power loss of the semiconductor devices to be measured is determined according to the load voltage and the load current；
The reality of the semiconductor devices to be measured is determined according to the junction temperature-saturation voltage drop relation curve and the saturation voltage drop
When junction temperature；
The wink of the semiconductor devices to be measured is determined according to the initial junction temperature, the real-time junction temperature and the power loss
State thermal impedance curve；
The integral structure function and differential structrue of the semiconductor devices to be measured are determined according to the transient thermal impedance curve
Function；
The thermal resistance and thermal capacitance of the semiconductor devices to be measured are determined according to the integral structure function and differential structrue function
With the determination degree of aging for surveying semiconductor devices.
Further, the power circulation test system further includes being separately positioned on the inlet and outlet and water outlet of the water cooler
Temperature sensor at mouthful.When semiconductor devices to be measured is crimp type device, need to add a set of pressurizing device to be measured half
Conductor device pressurization, meanwhile, pressure sensor is provided in the test branch, the pressure sensor is used for real-time measurement
The pressure value of the semiconductor devices to be measured.
As it can be seen that power circulation test system provided in this embodiment is equivalent to the micrometer microscope of semiconductor devices to be measured,
It can reflect in real time the change of device encapsulation structure inner layers encapsulating material according to user demand during power circulation test
Change situation.And due to one and only one the test branch switch conducting of each moment, and a power circulation test period
Interior, each test branch switch is both turned on once.Thereby it is ensured that synchronization DC power supply electric current only flows through one
Branch is tested, remaining test branch is off and cools down state, and the electric current of DC power supply output can be in different test branches
Orderly switching, to guarantee that during entire power cycle is tested, the output of DC current keeps stablizing, and effectively prevents straight
The switching process repeatedly in galvanic electricity source, substantially increase DC power supply service life and long-term running reliability.
Embodiment 2:
The present embodiment is said by taking 90kW/3000A power circulation test system and the IGBT device to be measured of 3000A as an example
It is bright.
Fig. 3 is the structural block diagram for the power circulation test system that the embodiment of the present invention 2 provides.As shown in figure 3, power cycle
Test macro mainly include controller, power-supply system, load system, calibration system, measuring system, degree of aging assessment system and
Water-cooling system etc..Wherein, power-supply system includes DC power supply, measurement power supply and grid power supply, load system include several simultaneously
The test branch of connection and a diverter branch, controller mainly execute control function and defencive function, including test switch driving
Timing control, data processing and system protection of pulse etc., each section complements each other, the high pressure of common cooperation composition high efficient and reliable
High-power IGBT device power loop test system.Fig. 4 is the principle for the power circulation test system that the embodiment of the present invention 2 provides
Figure, the working principle of power circulation test system components provided in this embodiment are as follows:
1, controller is entire cycling system for power " brain ", is connected to the various pieces of power circulation test system,
The major function of controller includes timing control, data processing and system protection etc..
1.1) timing control:
Fig. 5 is the comparative diagram of the test sequence provided of the embodiment of the present invention 2 and variations injunction temperature.(a) of Fig. 5 indicates each test
The conducting timing of branch, wherein I1Indicate the load current that the first test branch flows through, I2Indicate what the second test branch flowed through
Load current, I3Indicate the load current that third test branch flows through.(b) of Fig. 5 partially indicate each item test branch road to
Survey the variations injunction temperature of semiconductor devices, wherein T1Indicate the variations injunction temperature of the semiconductor devices to be measured of the first test branch road, T2
Indicate the variations injunction temperature of the semiconductor devices to be measured of the second test branch road, T3Indicate the semiconductor to be measured of third test branch road
The variations injunction temperature of device.In 90kW/3000A power circulation test system, the DC power supply direct current for exporting 3000A stable always
Electric current, controller is to shown in the part (a) of test branch switch according to figure Fig. 5 in three test branches in load system
Timing is controlled.In conjunction with Fig. 5 (b) part it is found that can guarantee that the 3000A electric current of synchronization DC power supply only flows through 1
Item tests branch, and two other test branch is off and cools down state, and the electric current of DC power supply output can be in different tests
Orderly switch in branch, to guarantee that during entire power cycle is tested, the output of DC current keeps stablizing, and effectively keeps away
The switching process repeatedly for having exempted from DC power supply, substantially increase DC power supply service life and long-term running reliability.
It is when the branch, which flows through current time, to be reached predetermined value Ton and need to cool down, then corresponding by control test branch
It tests branch switch and load current is switched to another test branch, the measured device of the branch is then in cooling shape at this time
State is taken away heat by external water cooler, and 3 test branches alternately turn on and off, and makes full use of the cooling of measured device
Time heats the device under test of other branches, can greatly promote testing efficiency.
In practical application, user can also adjust quantity and the diverter branch of test branch according to actual needs to reach
Different test requests, different tests can be met by such as reducing tested number of branches or increasing diverter branch as tested branch
Demand.But in order to guarantee the continuity of DC power supply output electric current, at least to guarantee that there are two branches, such as 2 test branch
Road or 1 test branch and diverter branch.
1.2) data processing unit in controller as desired carries out data by the data in collecting and measuring system
It handles and passes through friendly user interface and present in front of the user, for example, utilizing the collected load current of measuring system
(Iload) and load current under collector-emitter voltage drop (Vce(I)) corresponding power loss P can be calculatedLoss, using adopting
Pressure drop (V under the measurement electric current collectedce(m)), in conjunction with the relation curve of saturation voltage drop under junction temperature and low current, so that it may convert
Obtain junction temperature Tj。
1.3) safe operation of the system protection concerning entire cycling system for power, system protection are divided into software protection and hardware
Protection is provided with many protective conditions in software protection, once control system detects that abnormal conditions exist, soon pass through journey
Sequence control shutdown DC power supply simultaneously stops testing, and hardware protection is worked in the case where software protection failure, such as controller
Hardware platform for example computer failure cause software that can not work, hardware protection module can turn off direct current by electrical means
Power supply simultaneously stops testing.
2, power-supply system is entire power circulation test system inputing power, and main includes providing heated current to load to make
Semiconductor devices to be measured reaches the DC power supply of specified temperature rise, the measuring current source for measuring the real-time junction temperature of measured device indirectly
With the grid current source for opening semiconductor devices to be measured.
2.1) DC power supply is the core of power circulation test, and capacity determines the power of test and efficiency of power cycle,
The ability of output electric current determines that the current limitation of single measured device, output voltage determine series connection semiconductor devices to be measured
Number.Output voltage is higher, can concatenated semiconductor devices to be measured number it is more, entire voltage mainly by high temperature when to be measured half
Load voltage, the pressure drop of device aging bring and loss of switch and route of conductor device etc. are constituted.
Power cycle on-test, to current value needed for controller input test, DC power supply just starts to stablize output
DC current controls test branch according to control sequential shown in fig. 5 for heating to the tested IGBT device in load system
Primary conducting, the stable DC stream that DC power supply can be made to export switch between different test branches.
Measurement power supply is primarily used to measure the real-time junction temperature of measured device indirectly, needs before power circulation test to all
Measured device the calibration of device equivalent junction temperature and saturation voltage drop is carried out under the conditions of the specified measurement low current, obtain device
The relation curve of saturation voltage drop and the equivalent junction temperature of device.
2.2) measuring current source is arranged to establish the junction temperature of device under test-saturation voltage drop relation curve, is passed through
Junction temperature-saturation voltage drop relation curve can determine the real-time junction temperature of semiconductor devices to be measured indirectly.Before power cycle test,
The calibration unit that can be first passed through in controller carries out device under the conditions of specified measurement low current to all device under test
The calibration of equivalent junction temperature and saturation voltage drop obtains the relation curve of device saturation voltage drop Yu the equivalent junction temperature of device.Fig. 6 is the present invention
The relation curve of semiconductor devices to be measured saturation voltage drop and junction temperature in the case where measuring electric current that embodiment 2 provides.Then according to Fig. 6 institute
The junction temperature shown-saturation voltage drop relation curve will measure semiconductor devices to be measured in measurement electricity during power circulation test
Saturation voltage drop under stream effect is converted into corresponding junction temperature.The size for measuring electric current, which is chosen, to be needed according to semiconductor devices to be measured
Type and current class determine, need to meet two conditions, can neither be excessive and so that device is generated spontaneous heating, and cannot be too small
And device cannot be made to form stable voltage drop, it is typically chosen as the 1/1000 of semiconductor devices rated current to be measured, such as IGBT
Module rated current is 500A, then measurement electric current may be selected to be 500mA.
2.3) grid power supply is 0~20V variable voltage source, and the grid loaded in semiconductor devices to be measured is to be measured to open
IGBT device, so that load current and measurement electric current are able to enter the test that semiconductor devices to be measured carries out respective physical amount, it can
Be adjusted using grid voltage of the grid power supply to different tested IGBT according to experimental condition demand.
3, load system includes test branch and diverter branch, and the present embodiment is provided with three test branches and a shunting
Branch.As shown in fig. 7, including 1 test branch and 1 for being used for crimp type IGBT device in every test branch of the present embodiment
Item is used for the test branch of welded type IGBT device, when actual test user can according to need selection crimp type IGBT device or
The test branch of person's welded type IGBT module.
3.1) in the present embodiment, every test branch includes that 4 IGBT devices (DUT) to be measured and a test branch are opened
It closes, test branch switch uses the IGBT module parallel of two high currents, and controller carries out timing control to it to realize to straight
Galvanic electricity stream turns on and off.The number of IGBT device to be measured is determined by the output voltage of DC power supply.User when actual test
It can according to need the test branch of selection crimp type IGBT device test branch or welded type IGBT module.In power cycle
Branch switch needs are tested in test process to turn on and off repeatedly for a long time, it is very high to its reliability requirement, therefore, this
Test branch switch in embodiment turns on and off DC current to realize using the IGBT module parallel of two high currents
Control.
3.2) diverter branch can be with the function of flexible modulation power circulation test system, so that power circulation test system function
Energy diversification customizes, and can be controlled using diverter branch electric current as regulated quantity well based on PI adjusting and flow through tested branch
Electric current.
When testing the module of different vendor, the otherness between module is larger, reaches and bears needed for identical variations injunction temperature
It is different to carry electric current, such as in order to enable all module junction temperature rises reach 60 DEG C, first tests the IGBT module to be measured of branch road
The electric current of 2000A is needed, the IGBT module to be measured of the second test branch road only needs 1900A, and third tests the to be measured of branch road
IGBT module needs the electric current of 2050A.If without diverter branch, it is necessary to directly be controlled by controller to DC power supply
System makes DC power supply adjust the DC current of its output in real time in different test branch switchings, this will lead to DC power supply
Aging speed is accelerated, and reliability substantially reduces.After introducing diverter branch, diverter branch can be made to flow through based on PI control desired
Electric current, to guarantee that DC power supply exports stable DC.It is as follows that it, which implements process:
In the present embodiment, third tests the electric current highest that the IGBT module to be measured of branch road needs, and is the electric current of 2050A,
Therefore, controller control DC power supply exports the DC current of stable 2050A.The electricity of test branch is flowed through by real-time measurement
The electric current for flowing and flowing through diverter branch passes through control when the electric current of DC power supply output is switched to the first test branch road
Pi regulator in device controls the grid voltage of the IGBT of diverter branch, so that diverter branch shares the electric current of 50A, together
When, diverter branch current sensor is by the electric current Real-time Feedback of diverter branch to controller.Similarly, when electric current is switched to second
When testing branch, the grid voltage of the IGBT of diverter branch is controlled, so that diverter branch shares the electric current of 150A.And it is electric
When stream is switched to third test branch, diverter branch closing is not involved in shunting.
Meanwhile diverter branch is alternatively arranged as tested branch intervention, the current capacity of 2 times or more is needed, so such as Fig. 8 institute
Show, the diverter branch of the present embodiment includes two diverting switch in parallel, that is, uses 2 high current IGBT modules to ensure branch
Longtime running reliability.
4, measuring system is mainly responsible for the acquisition sum number of semiconductor devices relevant parameter to be measured during power circulation test
It according to feedback, feeds back into controller, provides foundation for the ageing state assessment and control protection etc. of semiconductor devices to be measured, measure
Parameter mainly includes electric parameter, thermal parameter and pressure parameter.Measuring system specifically includes that load current sensor, load electricity
Pressure sensor, grid voltage sensor, temperature sensor, pressure sensor.
4.1) measuring system needs the electric parameter acquired mainly to have in power circulation test process: grid voltage (Vge),
Load current (Iload), collector-emitter voltage drop (V under load currentce(I)), load voltage and load current can be fed back
It is used to calculate power loss P to controller, the saturation voltage drop under electric current can will be measured according to junction temperature-saturation voltage drop relation curve
(Vce(m)) converting obtains corresponding junction temperature.
4.2) measuring system needs the temperature signal acquired mainly to pass through temperature sensor in power circulation test process
Temperature (the T of the water cooler Inlet and outlet water of acquisitioninlet,Toutlet), the surface temperature (T of semiconductor devices shell to be measuredc) and to be measured half
Junction temperature (the T of conductor devicej).Further, in this embodiment temperature sensor be thermocouple, junction temperature (Tj) it is to pass through measurement
Saturation voltage drop under electric current carries out conversion indirectly and obtains, and belongs to measurement indirectly and obtains, the temperature (T of water cooler Inlet and outlet waterinlet,
Toutlet) controller is fed back to for controlling the operation of water cooler.
4.3) power circulation test system provided in this embodiment is additionally provided with pressure sensor, for real-time measurement and remembers
Pressure change of the crimp type IGBT device to be measured in power cycle procedure is recorded, while needing to record the first of semiconductor devices to be measured
Beginning pressure value.
5, the controller in power circulation test system provided in this embodiment can also be assessed in real time according to structure function to
Ageing state of IGBT device during power circulation test is surveyed, to comment offline during overcoming ordinary power loop test
The defect estimated can reflect in real time that device encapsulation structure inner layers encapsulate during power circulation test according to user demand
The situation of change of material.
Transient thermal impedance curve when progress Aging Assessment firstly the need of acquisition semiconductor devices to be measured in temperature-fall period:Wherein, ZthIndicate transient thermal impedance.Due to obtaining the experiment condition and function of transient thermal impedance curve
The experiment condition of rate cyclic test is different, it is therefore desirable to which the test of temporary suspension power cycle can be set and carry out how many times power
It is automatic after cyclic test to carry out a transient thermal impedance test, such as can be set to 1000 power cycles of progress and test it
It is automatic afterwards to carry out a transient thermal impedance test, for the Real time aging status assessment to tested IGBT module.
Transient thermal impedance test method has temperature-raising method and falling temperature method, and the present embodiment uses falling temperature method, can overcome temperature-raising method
In temperature-rise period the problem of temperature fluctuation.The test process of transient thermal impedance are as follows: water cooler is run always, and DC power supply output is steady
To determine DC current to heat IGBT device to be measured, after a period of time, semiconductor devices to be measured is in stable state, i.e., and to be measured half
The junction temperature and shell temperature of conductor device are stablized, and at this moment measuring system can be negative under load current by the semiconductor devices to be measured of acquisition
Voltage Feedback is carried to the data processing unit of controller for calculating power loss P, disconnects DC power supply, IGBT mould to be measured later
Block starts to cool down under the heat spreading function of water cooler, and real-time measurement IGBT module to be measured is in the case where measuring electric current during cooling
Saturation voltage drop, converted to obtain real-time junction temperature T according to junction temperature-saturation voltage drop relation curvej(t), transient state can thus be passed through
The formula of thermal impedance:Transient thermal impedance curve is calculated.Due to the reflection of transient thermal impedance curve
It is semiconductor device inside heat transient state transmittance process, so relatively high sample rate is needed just to can ensure that measurement result just
True property.
Then, it is determined to reflect semiconductor device inside calorifics information to be measured according to the transient thermal impedance curve of acquisition
Integral structure function and differential structrue function, two obtained structure functions can reflect semiconductor device inside to be measured in real time
The thermal resistance and thermal capacitance of layers of material.
Fig. 9 is the structure function for the tested semiconductor devices that the embodiment of the present invention 2 provides with the change of power cycle number
Change comparison diagram.As shown in figure 9, the function for needing to measure transient thermal impedance curve can be set according to demand during actual test
Rate cycle-index, is converted into structure function, and all obtained structure functions are put together comparison, can clearly see
To the situation of change of every layer of encapsulating material of device inside after multiple power circulation test, the aging of positioning devices can be also understood
Position.
6, water cooler is a relatively independent system, is mainly used to cool down to semiconductor devices to be measured, takes away device quilt
The heat that DC current generates when heating, so that semiconductor devices to be measured within a specified time drops to specified temperature.Due to big
The loss of power IGBT device is bigger, and the heat of generation is huge, while the temperature rise variation needed when power cycle examination is greatly, institute
It is very high with the requirement to water cooler, it needs just to be able to satisfy corresponding temperature fall time requirement using water-water-cycling mode, need simultaneously
Corresponding matched design is carried out to the water-cooled plate of water cooler.
In view of at present for testing efficiency and reliability existing for high-power IGBT device power circulation test system
The power circulation test system of the problems such as low, a kind of high-power IGBT device that the present embodiment proposes can test up to 12 simultaneously
High-power IGBT device, by effectively utilizing the temperature fall time of a test branch come to the to be measured of other test branch roads
Device is heated, and is substantially increased the quantity of device under test, and strong to the protectiveness of DC power supply, can be effectively improved test
The utilization rate and reliability of efficiency and DC power supply, additionally it is possible to using structure function real time on-line monitoring and assess semiconductor to be measured
The aging conditions of each layer encapsulating material of device inside position the position of measured device aging in time.At the same time it can also for current
The IGBT device (welded type IGBT module and crimp type IGBT device) of most important two kinds of different packing forms carries out pair simultaneously
It is flexible HVDC transmission system reliability test service than test.
Moreover, the function of power circulation test system provided in this embodiment is more, degree height is customized, diverter branch is cooperated
The switching that can carry out a variety of test functions according to user demand with a plurality of test branch, can carry out different manufacturers device same
Contrast test under test condition.It is strong to the protectiveness of DC power supply due to the high reliablity of entire power circulation test system,
It is highly suitable for the power circulation test of high-power IGBT module.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.
Used herein a specific example illustrates the principle and implementation of the invention, and above embodiments are said
It is bright to be merely used to help understand method and its core concept of the invention；At the same time, for those skilled in the art, foundation
Thought of the invention, there will be changes in the specific implementation manner and application range.In conclusion the content of the present specification is not
It is interpreted as limitation of the present invention.
Claims (7)
1. a kind of power circulation test system of semiconductor devices, which is characterized in that the power circulation test system includes: control
Device, driver, at least one test branch, DC power supply and water cooler processed, wherein
Every test branch connect to form closed circuit with the DC power supply, and the DC power supply is used for the test
Branch provides constant current；
Every test branch includes: a test branch switch and the test branch switch concatenated several to be measured half
Conductor device, and each semiconductor devices to be measured is connected in series；
The controller is connect with driver, and the controller is used to generate the pulse signal of each test branch switch；
The driver is connect with each test branch switch, and the driver generates corresponding according to each pulse signal
Switch drive pulse is tested, the test switch drive pulse is for driving the corresponding test branch switch；
The water cooler corresponds to the test branch setting, and the water cooler is for cooling down each semiconductor devices to be measured；
The power circulation test system further includes diverter branch, the diverter branch and the test branch circuit parallel connection；Described point
Flowing branch includes diverting switch；
The power circulation test system further includes source current sensor, wherein
The source current sensor is connected with the DC power supply, and the source current sensor is for detecting the direct current
The output electric current in source；
The controller is connect with the source current sensor, the controller be used for according to the output electric current of DC power supply and
The expectation electric current of the corresponding test branch of the test branch switch be currently connected adjusts the electric current of the diverter branch.
2. power circulation test system according to claim 1, which is characterized in that one and only one test of each moment
Branch switch conducting, and within a power circulation test period, each test branch switch is both turned on once.
3. power circulation test system according to claim 1, which is characterized in that the conducting of each test branch switch
Time is T/n, and each phase for testing switch drive pulse for testing branch switch is successively advanced or lags T/n,
Wherein, T indicates the power circulation test period, and n indicates the item number of test branch.
4. power circulation test system according to claim 1, which is characterized in that the power circulation test system is also wrapped
The diverter branch current sensor connecting with the controller is included, the diverter branch current sensor setting is in shunting branch
Lu Zhong, the diverter branch current sensor are used to detect the electric current of the diverter branch.
5. power circulation test system according to claim 1, which is characterized in that the power circulation test system is also wrapped
Include load current sensor and load voltage sensor connected to the controller respectively, wherein
The load current sensor is for detecting the electric current for flowing through the semiconductor devices to be measured；
The load voltage sensor is used to detect the voltage at the semiconductor devices both ends to be measured；
The controller is used for
Obtain the corresponding test branch switch of the test branch it is in the conductive state when, flow through the semiconductor devices to be measured
The load voltage of load current and the semiconductor devices both ends to be measured；
Obtain the initial junction temperature of the semiconductor devices to be measured, junction temperature-saturation voltage drop relation curve and the test branch road
When test branch switch is in an off state, the saturation voltage drop at the semiconductor devices both ends to be measured；
The power loss of the semiconductor devices to be measured is determined according to the load voltage and the load current；
The real-time knot of the semiconductor devices to be measured is determined according to the junction temperature-saturation voltage drop relation curve and the saturation voltage drop
Temperature；
The thermal transient of the semiconductor devices to be measured is determined according to the initial junction temperature, the real-time junction temperature and the power loss
Impedance curve；
The integral structure function and differential structrue function of the semiconductor devices to be measured are determined according to the transient thermal impedance curve；
The thermal resistance and thermal capacitance for determining the semiconductor devices to be measured according to the integral structure function and differential structrue function are with true
The degree of aging of the fixed semiconductor devices to be measured.
6. power circulation test system according to claim 1, which is characterized in that the power circulation test system is also wrapped
Include the temperature sensor of the inlet and outlet and water outlet that are separately positioned on the water cooler.
7. power circulation test system according to claim 1, which is characterized in that the power circulation test system is also wrapped
The pressure sensor being arranged in the test branch is included, when the semiconductor devices to be measured is crimp type semiconductor devices,
Pressure value of the pressure sensor for semiconductor devices to be measured described in real-time measurement.
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| CN109444705B (en) * | 2018-10-28 | 2021-12-14 | 北京工业大学 | Power cycle experimental device for multi-junction temperature difference control of automobile-grade IGBT |
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| CN109814020A (en) * | 2019-03-05 | 2019-05-28 | 大连芯冠科技有限公司 | Power semiconductor power circulation test system |
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| CN112986781B (en) * | 2021-02-10 | 2023-01-17 | 中国科学院电工研究所 | Junction temperature online monitoring data verification system and method |
| CN113138329A (en) * | 2021-04-21 | 2021-07-20 | 重庆大学 | Power cycle main circuit suitable for GaN power semiconductor device |
| CN114217261B (en) * | 2021-12-15 | 2022-09-09 | 浙江大学 | Power device aging parameter correction method for power cycle test |
| CN115290945B (en) * | 2022-09-29 | 2022-12-23 | 山东阅芯电子科技有限公司 | High-precision test current source and method for power cycle test |
| CN115993516B (en) * | 2023-03-23 | 2023-06-20 | 深圳平创半导体有限公司 | Method and system for measuring junction temperature distribution inside crimping type power semiconductor device |
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