CN115986347B - Dual-frequency semi-closed super-surface cavity filter and transmission zero control method - Google Patents
Dual-frequency semi-closed super-surface cavity filter and transmission zero control method Download PDFInfo
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Abstract
The application discloses a double-frequency super-surface cavity filter and a transmission zero control method, wherein the double-frequency super-surface cavity filter comprises an upper medium plate and a lower medium plate which are sequentially stacked; the upper surface of the upper dielectric plate is printed with a first metal layer, the lower surface of the upper dielectric plate is printed with periodic patch units, each patch of each periodic patch unit is cut with a plurality of gaps which are sequentially arranged, and microstrip line feed structures are arranged on two adjacent sides of each periodic patch unit; the lower dielectric plate is provided with a concave cavity at a position corresponding to the periodic patch unit, and periodic metallized mushroom-shaped structural units are arranged around the concave cavity; the lower surface of the lower dielectric plate is printed with a second metal layer; the adjacent two sides of the concave cavity are provided with cavity ports, and the cavity ports are provided with feeder line through holes. The filter provided by the application has the passband response function of controllable FTZ quantity and size between passbands, and has good frequency selection characteristic and higher out-of-band rejection level.
Description
Technical Field
The application relates to the technical field of electronics, in particular to a double-frequency super-surface cavity filter and a transmission zero control method.
Background
The frequency spectrum is expanded by determining and dividing the 5G millimeter wave frequency band. With the perfect layout of the 5G network and the research development of the 6G communication system, the design of the higher frequency band low insertion loss, the multifrequency, the high miniaturization and the frequency selectivity of the filter become the problems to be solved urgently, so that a certain solution can be provided for the key technology of the higher frequency band design, the hardware low loss and the integrated design.
Currently, there are several common solutions, one is a millimeter wave low Insertion Loss (IL) waveguide bandpass filter proposed by ridge-gap waveguide (RGW) technology. The Bandwidth (BW) expansion of the filter is mainly realized by directly coupling a plurality of single-mode resonant cavities, so that the RWG filter has the problems of large volume and heavy mass; another is an integrated, miniaturized millimeter wave multi-band pass filter proposed using Substrate Integrated Waveguide (SIW) technology. However, this type of filter still requires coupling multiple SIW cavities for multi-frequency, broadband response, which results in increased insertion loss, and in addition, requires additional transitional matching circuitry due to the large waveguide impedance.
The controllability of the limited transmission zero (FTZ) is significant in that the flexibility of controlling the number of FTZ and the frequency size is enhanced, so that the problems of inter-band suppression difference, poor frequency selectivity and rectangular coefficient (K) of the filter are improved, and the filter does not have a frequency selection function under the condition that no other design is performed on the waveguide, such as cutting a slit on the SIW waveguide. There is a method of studying the coupling relation of cavity modes of a plurality of resonant cavities at input and output ports to obtain the introduction of FTZ at both sides of a passband, however, when a plurality of frequency bands work simultaneously, the method cannot realize more FTZ between the frequency bands.
In addition, the FTZ of the filter can be designed by introducing negative coupling through a design method such as cutting a gap on the SIW cavity wall. The greatest advantage of this approach is that it enables out-of-band FTZ designs but does not perturb the in-band response. However, the method has the defects that the shape design and the size selection of the gap are complex, so that the frequency selection controllability is not high and the BW is narrow. And the SIW filter is packaged by using an Integrated Substrate Gap Waveguide (ISGW) technology, so that FTZ is arranged on two sides of a passband, and the rectangular coefficient of the filter can be improved. But this approach increases the cross section and dielectric loss of the filter.
Therefore, the conventional filter has certain defects, on one hand, the problems of poor suppression between frequency bands and no frequency selectivity exist in the conventional Integrated Substrate Gap Waveguide (ISGW) and Substrate Integrated Waveguide (SIW) cavity filter, and on the other hand, the problems of radiation loss exist in the IW cavity filter, and in addition, the problems of large volume, heavy mass and the like exist in the conventional structures such as the metal rectangular waveguide, the circular waveguide and the like.
Disclosure of Invention
In order to solve the technical problems, the application provides a dual-frequency semi-closed super-surface cavity filter and a transmission zero control method, which can solve the problems of poor suppression and no frequency selectivity between frequency bands existing in the traditional Integrated Substrate Gap Waveguide (ISGW) and Substrate Integrated Waveguide (SIW) cavity filter and the problem of radiation loss existing in the SIW cavity filter under the condition that the in-band response is not affected.
In a first aspect, an embodiment of the present application provides a dual-frequency semi-closed super-surface cavity filter, including:
an upper dielectric plate and a lower dielectric plate sequentially stacked;
the upper surface of the upper medium plate is printed with a first metal layer, the lower surface of the upper medium plate is printed with a periodic patch unit, each patch of the periodic patch unit is cut with a plurality of gaps which are sequentially arranged, and the periodic patch unit, the upper medium plate and the first metal layer jointly form the upper surface of the filter;
microstrip line feed structures are arranged on two adjacent sides of the periodic patch unit;
the lower dielectric plate is provided with a concave cavity at a position corresponding to the periodic patch unit, periodic metallized mushroom-shaped structural units are arranged around the concave cavity, and the periodic metallized mushroom-shaped structural units form the cavity wall of the concave cavity;
the lower surface of the lower dielectric plate is printed with a second metal layer, and the second metal layer forms the lower surface of the filter;
and cavity ports are arranged on two adjacent sides of the concave cavity at positions corresponding to the microstrip line feed structures, feeder line through holes are arranged on the cavity ports, and the feeder line through holes penetrate through the second metal layer.
Further, the periodically metallized mushroom-shaped structural unit is composed of a plurality of through holes and corresponding metal patches, the through holes Kong Shuangpai are arranged in parallel on the periphery of the concave cavity to form the cavity wall of the concave cavity, the through holes penetrate through the second metal layer, and the metal patches are correspondingly arranged above each through hole.
Further, the microstrip line feed structure comprises a first feed microstrip line and a second feed microstrip line, and the first feed microstrip line and the second feed microstrip line are arranged vertically in a coplanar manner;
the cavity port comprises a first cavity port and a second cavity port, the first cavity port corresponds to the first feed microstrip line, the second cavity port corresponds to the second feed microstrip line, a first feeder line via hole and a second feeder line via hole are formed in the first cavity port, and a third feeder line via hole and a fourth feeder line via hole are formed in the second cavity port.
Further, the periodic patch units are rectangular structural units formed by arranging a plurality of periodic square patches according to a preset arrangement.
In a second aspect, an embodiment of the present application provides a transmission zero control method for a dual-frequency semi-closed super-surface cavity filter, including:
acquiring a transmission line model of a periodic patch unit of the double-frequency semi-closed ultra-surface cavity filter;
converting the transmission line model into an expression of forward transmission parameters through an ABCD matrix;
calculating to obtain the position of a transmission zero point according to the expression of the forward transmission parameter;
the position of the transmission zero point is controlled through the periodic parameter of the periodic patch unit and the gap parameter of the gap on each patch in the periodic patch unit;
and controlling the number of the transmission zero points through the number of gaps on each patch in the periodic patch unit.
Further, the step of obtaining the transmission line model of the periodic patch unit of the dual-frequency semi-closed ultra-surface cavity filter includes:
a patch capacitor and a patch inductor exist between every two patches in the periodic patch unit, and a gap capacitor and a gap inductor exist in each gap on each patch;
the patch capacitor and the patch inductor are connected in parallel, the gap capacitor and the gap inductor are connected in parallel, and the two parallel connections are connected in series to form the transmission line model.
Further, the expression of the forward transmission parameter is calculated using the following formula:
wherein ,
[ABCD]for transmitting matrix [ a ] 11 a 12 a 21 a 22 ]，A＝a 11 ＝1，B＝a 12 ＝-jwL i /(1-w 2 L i C i )，i＝p,1,2,3，C p and Lp The subscripts 1, 2, and 3 for L and C represent the slot capacitance and slot inductance of each slot on each patch, respectively, and C=a 21 ＝0，D＝a 22 =1, j is an imaginary number, w is the operating angular frequency of the periodic patch unit, Z' 0 ＝377Ω，Z′ 0 Is free space wave impedance.
Further, the step of controlling the position of the transmission zero point by the periodic parameter of the periodic patch unit and the slit parameter of the slit on each patch in the periodic patch unit includes:
the position of the transmission zero point is controlled through the periodic parameters of the periodic patch unit;
and controlling the position of the transmission zero point through the gap parameters of the gaps on each patch of the periodic patch unit, wherein the gap parameters comprise the gap length, the gap width and the gap distance between the two gaps.
Further, the step of controlling the number of transmission zeros by the number of slits on each patch in the periodic patch unit includes:
forming a first-order band-stop filter response according to every two coupled gaps to obtain the number of transmission zeros;
and controlling the number of transmission zero points by the number of gaps on each patch in the periodic patch unit, wherein the number of the transmission zero points is the number of the gaps minus one.
Further, after the number of slots passing through each patch in the periodic patch unit, controlling the number of transmission zeros further includes:
acquiring a first equivalent circuit of the dual-frequency semi-closed super-surface cavity filter, wherein the first equivalent circuit comprises a cavity port equivalent circuit, a periodic metallized mushroom-shaped structural unit equivalent circuit, a dielectric cavity equivalent circuit and the transmission line model which are connected in parallel;
generating a frequency forbidden band gap according to the parasitic resonance suppression mode of the periodic metallized mushroom structural unit equivalent circuit;
and generating resonant cavity modes with preset numbers in the frequency forbidden band gap according to the frequency forbidden band gap and the dielectric cavity equivalent circuit.
Compared with the prior art, the millimeter wave dual-band pass filter is realized, the problems of poor suppression and no frequency selectivity between frequency bands existing in the traditional Integrated Substrate Gap Waveguide (ISGW) and Substrate Integrated Waveguide (SIW) cavity filter are solved under the condition that the in-band response is not affected, the problem of radiation loss in the SIW cavity filter is solved, and the millimeter wave dual-band pass filter has the characteristics of high out-of-band suppression degree, good rectangular coefficient, easiness in processing, miniaturized structure and light weight.
Drawings
FIG. 1 is a schematic structural diagram of a dual-frequency ultra-surface cavity filter according to an embodiment of the present application;
FIG. 2 is a schematic view of the lower surface structure of the upper dielectric plate of FIG. 1;
FIG. 3 is a schematic view of the upper surface structure of the lower dielectric plate of FIG. 1;
FIG. 4 is a schematic view of the lower surface structure of the lower dielectric plate of FIG. 1;
fig. 5 is a schematic flow chart of a method for controlling a transmission zero of a dual-frequency super-surface cavity filter according to an embodiment of the present application;
FIG. 6 is a diagram illustrating the structure of an FSS cell and the effects of inductance and capacitance according to an embodiment of the present application;
FIG. 7 is an equivalent circuit schematic diagram of the FSS cell structure of FIG. 6;
FIG. 8 is a schematic diagram of transmission coefficient simulation and calculation results of the FSS cell structure of FIG. 6;
FIG. 9 is a schematic diagram of analysis of FTZ position regulation by cycle parameters provided by an embodiment of the present application;
FIG. 10 is a schematic diagram of analysis of gap parameters versus FTZ position regulation provided by an embodiment of the present application;
FIG. 11 is a schematic diagram of analysis of gap spacing versus FTZ position regulation provided by an embodiment of the present application;
FIG. 12 is a schematic diagram of simulation results of FSS reflection coefficients and transmission coefficients for each patch cut with two slots;
fig. 13 is an equivalent circuit schematic diagram of a dual-frequency super-surface cavity filter according to an embodiment of the present application;
FIG. 14 is a schematic view of a "dot" defect cavity provided by an embodiment of the present application;
FIG. 15 is a schematic view of a "line" defect cavity provided by an embodiment of the present application;
fig. 16 is a schematic diagram illustrating a test of transmission parameters of a dual-band ultra-surface cavity filter according to an embodiment of the present application.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Referring to fig. 1, a dual-band super-surface cavity filter according to a first embodiment of the present application includes: the upper dielectric plate 2 and the lower dielectric plate 10 are sequentially stacked, and can be fixed together by bonding or plastic screws. The upper surface of the upper dielectric plate 2 is printed with a first metal layer 1, and the lower surface is printed with a periodic patch unit 3.
Referring to fig. 2, the periodic patch unit 3 is a rectangular structural unit formed by a plurality of periodic square patches according to a preset arrangement, in this embodiment, the periodic patch unit 3 is preferably formed by adopting a 3×4 arrangement mode, a plurality of slots arranged sequentially are cut on each patch, in this embodiment, preferably, three slots are cut, and the length of each slot increases in turn, namely, 4, 5 and 6 slots in fig. 2, microstrip line feeding structures 7 are arranged on two adjacent sides of the periodic patch unit 3, including a first feeding microstrip line and a second feeding microstrip line, and the characteristic impedance of the microstrip line feeding structures is preferably set to be 50Ω, so that it can be seen that the first feeding microstrip line and the second feeding microstrip line are arranged vertically in a coplanar manner. The periodic patch unit 3 in this embodiment constitutes a frequency selective supersurface FSS, and the upper dielectric plate 2, the first metal layer 1 and FSS constitute an upper broad face of the cavity with a dielectric gap.
A concave cavity is disposed at a position of the lower dielectric plate 10 corresponding to the periodic patch unit 3, please refer to fig. 3 and 4, a periodic metallized mushroom-shaped structure unit is disposed around the concave cavity, the periodic metallized mushroom-shaped structure unit is composed of vias 9 and metal patches 8, the vias 9 are disposed around the concave cavity in parallel in double rows, a cavity wall of the concave cavity is formed, and the metal patches 8 are disposed above each via 9 correspondingly, that is, two rows of periodic metallized mushroom-shaped structure units are punched on the lower dielectric plate 10 along the X direction and the Y direction, the vias 9 are high to form four cavity walls of the filter in the longitudinal direction, that is, the Z direction, of the filter, and of course, the width and the length of the cavity can be increased along the transverse direction, that is, the X direction and the Y direction, to adjust the working center frequency and the cut-off mode frequency of the filter, the vias in the two rows are only one preferred mode, and the rectangular cavity formed in the X direction and the Y direction is only one preferred mode, in fact, for irregularly shaped cavity, the application can also be provided in specific size and flexible configuration according to specific situation of the filter.
Two adjacent sides of the concave cavity of the lower dielectric plate 10 are provided with cavity ports, namely a first cavity port A and a second cavity port B, the first cavity port A and the second cavity port B respectively correspond to the first feed microstrip line and the second feed microstrip line in position, two feeder through holes 12, namely four feeder through holes 12 in total, are respectively a first feeder through hole, a second feeder through hole, a third feeder through hole and a fourth feeder through hole, are also punched at the positions of the two cavity ports. That is, the feed microstrip line of the present application is composed of three parts including a feed-in cavity part, a port via part and a reserved soldering probe for testing.
A second metal layer 11 is printed on the lower surface of the lower dielectric plate 10, and the via hole 9 and the feeder line via hole 12 penetrate through the second metal layer 11, and in fact, the feeder line via hole 12 is periodic, but the diameter of the hole is different from that of the via hole 9, that is, the period of the via hole 9 is different, and the second metal layer 11 forms the lower surface of the filter.
Through the above description, we can obtain the structural characteristics of the dual-frequency semi-closed super-surface cavity filter, in practice, when manufacturing the filter, the concave cavity is designed firstly, and the basic theory suitable for designing the ISGW defect cavity can be utilized to design the concave cavity, the electromagnetic wave propagates in the ISGW waveguide, the resonant wavelength λ, the cavity broadside a, the narrow side b and the cavity length l. When a=5b, the change relation of the resonant frequency and the cavity size and mode is as follows:
in the formula ,f0mnq Is the resonance frequency of the TEmnq mode, epsilon r The dielectric constant is mu, the magnetic permeability is mu, m, n and q are used for labeling resonance modes in a combined mode, wherein the range of values of m, n and q is a natural number, and the initial values of a, b and l of the required designed frequency band can be determined by the formula.
Then, the periodic patch unit 3 and the microstrip line feed structure 7 on the upper dielectric plate 2 and the periodic metallized mushroom-shaped structural unit on the lower dielectric plate 10 are arranged, and the working center frequency and the cut-off mode frequency of the filter are adjusted by adjusting the arrangement and the period of the through holes 9, so that the dual-frequency semi-closed super-surface cavity filter provided by the embodiment of the application can be obtained, and the characteristics of the filter provided by the application are described below.
Referring to fig. 5, based on the same inventive concept, a transmission zero control method for a dual-frequency semi-closed ultra-surface cavity filter according to a second embodiment of the present application includes:
step S10, a transmission line model of a periodic patch unit of the double-frequency semi-closed ultra-surface cavity filter is obtained.
Step S20, converting the transmission line model into an expression of forward transmission parameters through ABCD matrix.
And step S30, calculating the position of the transmission zero point according to the expression of the forward transmission parameter.
And step S40, controlling the position of the transmission zero point through the periodic parameter of the periodic patch unit and the gap parameter of the gap on each patch in the periodic patch unit.
And step S50, controlling the number of the transmission zero points through the number of the gaps on each patch in the periodic patch unit.
Because of the problems of poor suppression between frequency bands and lack of frequency selectivity in the conventional Integrated Substrate Gap Waveguide (ISGW) and Substrate Integrated Waveguide (SIW) cavity filter, the present application aims to solve these problemsThe application designs the upper broad surface of the filter into a super surface FSS structure with frequency selection function, namely, as shown in fig. 6, the preferred FSS structure in the embodiment is three rows along the X direction and four columns along the Y direction to form a periodic structure, and a dielectric gap is formed between the periodic structure and the first metal layer 1, namely, the height parameter h of the upper dielectric plate 2 1 Thereby forming an upper surface of the semi-closed cavity filter with a dielectric gap. The equivalent circuit of the FSS structure is shown in FIG. 7, and a capacitor C is present between every two patches due to the existence of the patch gap p Inductance L p The method comprises the steps of carrying out a first treatment on the surface of the Capacitive inductance effect C of the presence of the slot 4 1 、L 1 The method comprises the steps of carrying out a first treatment on the surface of the Capacitive inductance effect C of the presence of the slot 5 2 、L 2 The method comprises the steps of carrying out a first treatment on the surface of the Capacitive inductance effect C of the presence of the gap 6 3 、L 3 Each pair of capacitance and inductance are connected in parallel, and then a plurality of capacitance and inductance are connected in parallel and then connected in series to form a transmission line model of the periodic patch unit 3.
Using the ABCD matrix of the transmission line model, S containing the transmission zero FTZ can be obtained 21 The expression of (2), i.e. S, is expressed by the following formula 21 ：
wherein ,
[ABCD]for transmitting matrix [ a ] 11 a 12 a 21 a 22 ]，A＝a 11 ＝1，B＝a 12 ＝-jwL i /(1-w 2 L i C i )，i＝p,1,2,3，C p and Lp The subscripts 1, 2, and 3 for L and C represent the slot capacitance and slot inductance of each slot on each patch, respectively, and C=a 21 ＝0，D＝a 22 =1, j is an imaginary number, w is the operating angular frequency of the periodic patch unit, Z' 0 ＝377Ω，Z′ 0 Is free space wave impedance.
Transmission parameter S 21 Is the forward transmission parameter of port A to port B when port B is matched, and S 21 The root of the molecular polynomial is the transmission zero point, and the position of the transmission zero point can be calculated and simulated by the above formula, namely as shown in fig. 8.
That is, by the FSS structure designed by the present application, the position of the transmission zero point can be calculated, and by adjusting each parameter of the FSS structure, the position of the transmission zero point can be controlled. The specific steps are as follows:
step S401, controlling the position of the transmission zero point through the periodic parameter of the periodic patch unit;
and step S402, controlling the position of the transmission zero point through the gap parameters of the gaps on each patch of the periodic patch unit, wherein the gap parameters comprise the gap length, the gap width and the gap spacing between the two gaps.
We pass the periodic parameter p' of the periodic patch unit 3 and the lengths l of the three slits on the square patch 1 、l 2 、l 3 And width w 1 、w 2 、w 3 For the FTZ in FIG. 8 1 and FTZ3 Is adjusted by the gap spacing g between the gaps to adjust the FTZ 1 and FTZ2 Is a position of (c).
At l 1 ＝1.8mm、w 1 ＝0.2mm、l 2 ＝1.5mm、w 2 ＝0.2mm、l 3 ＝1.45mm、w 3 Under the condition of=0.2mm, the position influence of the periodic parameter p' on the transmission zero point is shown in fig. 9, l 1 and w1 The effect on the position of the transmission zero point is shown in fig. 10, and the effect of the gap spacing g on the position of the transmission zero point is shown in fig. 11.
As can be seen from FIG. 9, the period parameter p' affects the FTZ 2 and FTZ3 The step length can reach 1.64GHz, and the FTZ is adjusted 1 The position has no influence, and it can be seen from FIG. 10 that the adjustment l 1 and w1 Can control FTZ 1 and FTZ3 The adjustment step length can reach 0.56GHz (@ 36 GHz), and the frequency of the FTZThe higher the rate, the smaller the FSS cell resonance size should be, which is now a high requirement for machining accuracy, but when the slot is loaded, the size of the FSS cell increases, which is a lower requirement for machining accuracy for higher frequency designs. As can be seen from FIG. 11, the gap spacing g controls the FTZ 1 and FTZ2 The adjustment step length can reach 0.44GHz, and the combination of the three analysis diagrams can find that the gap interval g is the adjustment FTZ 2 The relation between the FTZ position and the FSS structural design parameter can be determined through the analysis, namely the filter provided by the application can adjust the position of the transmission zero point by adjusting the design parameter of the periodic patch unit.
Further, the filter provided by the application can also control the number of transmission zeros through the number of gaps, and the specific steps are as follows:
step S501, a first-order band-stop filter response is formed according to every two coupled gaps, and the number of transmission zeros is obtained;
step S502, controlling the number of transmission zeros by the number of slots on each patch in the periodic patch unit, where the number of transmission zeros is the number of slots minus one.
According to the branch line coupling principle, the current on the two-by-two coupled branch lines is converted into the complementary magnetic current of the two-by-two coupled slits. Thus, the band-pass filter response is converted into the band-stop filter response, and each two coupled branch lines form a first-order band-pass filter response, so that each two coupled slits form a first-order band-stop filter response, and an FTZ is obtained, therefore, the number of limited transmission zero points obtained by the slits is N-1, and N is the number of slits cut on the square patch.
Referring to FIG. 12, two slots are cut in the patch, and the frequency of the two FTZ's of the band is FTZ 1 =35.7 GHz and FTZ 2 =47.5 GHz, where S 11 (dB) (i.e., reflectance Γ) is approximately equal to 0dB, S 21 (dB) (i.e., the transmission coefficient T) is small. Although these capacitances and inductances interact, it can also be found that FTZ 2 Is made up of cycle parametersp' generated, and another FTZ 1 Then it is generated by the coupling of two slots on the patch.
Referring again to FIG. 8, three slots are cut into the patch, and the frequencies of the three FTZ bands are 36GHz, 44GHz, 47.5GHz, and S for the three bands (i.e., three FTZ bands at this time) 21 (dB) is small, i.e., one FTZ is added compared with FSS in which only two slots are cut in the patch 3 . That is, the number of transmission zeroes may be adjusted by the number of slots cut in the patch.
Further, the filter provided in this embodiment may be equivalent to a circuit model, and the filter response analysis may be performed on the equivalent circuit, where the specific steps include:
step S60, a first equivalent circuit of the double-frequency semi-closed super-surface cavity filter is obtained, wherein the first equivalent circuit comprises a cavity port equivalent circuit, a periodically metallized mushroom-shaped structural unit equivalent circuit, a medium cavity equivalent circuit and the transmission line model which are connected in parallel;
step S70, generating a frequency forbidden band gap according to the parasitic resonance suppression mode of the equivalent circuit of the periodic metallized mushroom structural unit;
and step S80, generating resonant cavity modes with preset numbers in the frequency forbidden band gap according to the frequency forbidden band gap and the dielectric cavity equivalent circuit.
Referring to fig. 13, the equivalent circuit of the filter may be divided into four parts, which are a cavity port equivalent circuit, a periodic metallized mushroom-shaped structural unit equivalent circuit, a dielectric cavity equivalent circuit, and a transmission line model of the periodic patch unit.
Since two feeder line through holes 12 are drilled at the cavity port, the microstrip line feed structure 7 between the two feeder line through holes 12 has inductance L m Each of the two feeder vias 12 also has an inductance L f The method comprises the steps of carrying out a first treatment on the surface of the The microstrip line feed structure 7 and the via holes 9, the coupling capacitance C exists between every two via holes 9 and between the via holes 9 and the periodic patch unit 3 g A coupling capacitor C is arranged between the via hole 9 and the first metal layer h1 The method comprises the steps of carrying out a first treatment on the surface of the Cycle timeEach patch of the sexual patch unit 3 has an inductance L p A coupling capacitance C exists between the via hole 9 and the second metal layer 11 h2 At the same time, the via 9 itself also has an inductance L v The relationship between the inductance and the capacitance and the relationship between the capacitance are analyzed according to the structural characteristics of the filter, so that the cavity port equivalent circuit is shown in fig. 13 (1), the periodic metallized mushroom-shaped structural unit equivalent circuit is shown in fig. 13 (2) according to the periodicity of the periodic metallized mushroom-shaped structural unit, the equivalent circuit of the dielectric cavity which does not include the periodic metallized mushroom-shaped structural unit is shown in fig. 13 (3), the equivalent circuit of the periodic patch unit is shown in fig. 13 (4), and the specific capacitance-inductance connection relationship can be referred to the equivalent circuit of 13, which is not described in detail herein.
As can be seen from fig. 13, the circuit between two patches of the periodic patch unit 3 passes through the coupling capacitance C with the via 9 g In the series connection relationship, and in parallel connection with the equivalent circuit of each via hole 9, fig. 13 (2) is a unit equivalent circuit of a periodic metamaterial with high impedance surface characteristics, which has a parasitic resonance suppression mode, and can generate a frequency forbidden band gap, in which no other mode exists, and fig. 13 (3) is a resonant equivalent circuit of a dielectric cavity, and a certain number of resonant cavity modes can be designed according to the two equivalent circuits.
Referring to fig. 14, in the "dot" defect cavity, there is one cavity mode, i.e., GM1, in the frequency forbidden band gap FSG, and in practice, there may be multiple cavity modes in the frequency forbidden band gap according to the cavity.
Referring to fig. 15, in the "line" defect cavity, there are two resonant cavity modes, that is, GM1 and GM2, in the frequency forbidden band gap FSG, and it is also possible to design a case where there are multiple resonant cavity modes, which can be designed according to the method provided by the embodiment of the present application, and will not be illustrated here.
According to the filter and the transmission zero control method thereof provided by the embodiment of the application, the design and test of the filter are performed below, and the design parameters of the filter are shown in the following table 1, and it should be noted that the following design parameters are only for illustration and not specific limitation, and will not be repeated in detail.
| (symbol) | Numerical value | Definition of the definition |
| L m | 6.000 | Length of I portion of microstrip line feed structure 7 |
| L | 3.480 | Length of section II of microstrip line feed structure 7 |
| L f | 0.150 | Length of section III of microstrip line feed structure 7 |
| W | 1.300 | Width of microstrip line feed structure 7 |
| r f | 0.250 | Radius of feeder via 12 |
| r’ v | 0.439 | Radius of via 9 inside cavity wall |
| r v | 0.450 | Via 9 radius outside the cavity wall |
| h 1 | 0.254 | Height of upper dielectric plate 2 |
| h 2 | 0.813 | Height of lower dielectric plate 10 |
| a | 6.060 | Length of cavity broadside |
| b | 1.003 | Height of narrow side of cavity |
| l | 7.80 | Length of cavity |
| l’ p | 1.560 | Length of metal patch 8 |
| l p | 1.600 | Width of metal patch 8 |
| l 1 | 1.580 | Length of gap 4 |
| l 2 | 1.500 | Length of gap 5 |
| l 3 | 1.450 | Length of gap 6 |
| w 1 | 0.200 | Width of the slit 4 |
| w 1 | 0.200 | Width of the slit 5 |
| w 1 | 0.200 | Width of the gap 6 |
| g | 0.100 | Gaps between patches of the periodic patch unit 3 |
| p | 1.740 | Cycle size of via hole 9 and metal patch 8 |
| p’ | 1.689 | Periodic patch unit 3 cycle size |
Table 1 filter design parameter unit: mm (mm)
The upper dielectric plate 2 adopts RT5880 dielectric materials with dielectric constant of 2.2, loss tangent of 0.009 and thickness of 0.254 mm; the lower dielectric plate 10 is made of Rogers dielectric material with a dielectric constant of 3.36, a loss tangent of 0.0027 and a thickness of 0.813 mm; the overall filter dimensions were 14.02mm by 15.76mm by 1.076mm.
When the FSS is in a 3-row by 4-column layout, the corresponding size is generally that the length of the gap is smaller than the period size of the patch, the width of each gap is far smaller than the length of the gap, and the specific size can be selected in a plurality of optimization modes according to different filter design requirements.
Respectively transmitting parameters S for a double-frequency ISGW cavity filter and a double-frequency super-surface cavity filter which are manufactured according to the design parameters and do not contain FSS super-surface 11 and S21 From the test results of the S parameters of the dual-frequency ISGW cavity filter in the working wave bands 24.51-25.01GHz and 33.71-34.81GHz, the center frequency f of the filter can be seen 01＝ 24.80GHz、f 02 =34.00 GHz, fractional bandwidth FBW thereof 1 ＝2.02％、FBW 2 =3.23%. Out-of-band FTZ 1 ＝22.5GHz、FTZ 2 ＝27.5GHz、FTZ 3 ＝31.5GHz、FTZ 4 Four FTZ =36.5 GHz.
Referring to FIG. 16, the center frequency f of the dual-band subsurface cavity filter can be seen from the test results of S parameters in the working bands 26.59-27.11GHz and 33.56-34.47GHz 01 ＝26.85GHz、f 02 =34.02 GHz, fractional bandwidth FBW thereof 1 ＝1.94％、FBW 2 =2.67%. Out-of-band FTZ 1 ＝24.23GHz、FTZ 2 ＝28.01GHz、FTZ 3 ＝31.15GHz、FTZ 4 ＝31.67、FTZ 5 ＝33.05GHz、FTZ 6 ＝33.19GHz、FTZ 7 Seven FTZ at 34.56 GHz.
And without FSS super surfaceCompared with the dual-frequency ISGW cavity filter, the out-of-band suppression level of the dual-frequency ultra-surface cavity filter provided by the application is improved from 5dB to 11dB, and the number of FTZ between two design wave bands is increased from 1 to 4. I.e. from FTZ 3 Become FTZ 3 、FTZ 4 、FTZ 5 and FTZ3 . Therefore, the out-of-band rejection level and frequency selectivity are greatly improved without disrupting the in-band response, and the insertion loss in the transmission passband is better than 1.91dB, and the return loss is better than 1.95dB.
In summary, the embodiment of the application provides a dual-frequency super-surface cavity filter and a transmission zero control method, wherein the filter comprises an upper dielectric plate and a lower dielectric plate which are sequentially stacked; the upper surface of the upper medium plate is printed with a first metal layer, the lower surface of the upper medium plate is printed with a periodic patch unit, each patch of the periodic patch unit is cut with a plurality of gaps which are sequentially arranged, and the periodic patch unit, the upper medium plate and the first metal layer jointly form the upper surface of the filter; microstrip line feed structures are arranged on two adjacent sides of the periodic patch unit; the lower dielectric plate is provided with a concave cavity at a position corresponding to the periodic patch unit, periodic metallized mushroom-shaped structural units are arranged around the concave cavity, and the periodic metallized mushroom-shaped structural units form the cavity wall of the concave cavity; the lower surface of the lower dielectric plate is printed with a second metal layer, and the second metal layer forms the lower surface of the filter; and cavity ports are arranged on two adjacent sides of the concave cavity at positions corresponding to the feed structures, feeder line through holes are arranged on the cavity ports, and the feeder line through holes penetrate through the second metal layer. The millimeter wave dual-band pass filter provided by the application has the passband response function of controllable FTZ quantity and size between passbands, and has good frequency selection characteristic and higher out-of-band rejection level. Under the function of not influencing in-band response, the problems of poor suppression and no frequency selectivity between frequency bands existing in the traditional integrated substrate gap waveguide and substrate integrated waveguide cavity filter are solved, the problem of radiation loss existing in the substrate integrated waveguide cavity filter is solved, and meanwhile, the integrated waveguide cavity filter has the characteristics of stable structure, easiness in integration and easiness in processing.
In this specification, each embodiment is described in a progressive manner, and all the embodiments are directly the same or similar parts referring to each other, and each embodiment mainly describes differences from other embodiments. It should be noted that, any combination of the technical features of the foregoing embodiments may be used, and for brevity, all of the possible combinations of the technical features of the foregoing embodiments are not described, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples represent only a few preferred embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the application. It should be noted that modifications and substitutions can be made by those skilled in the art without departing from the technical principles of the present application, and such modifications and substitutions should also be considered to be within the scope of the present application. Therefore, the protection scope of the patent of the application is subject to the protection scope of the claims.
Claims (10)
1. A dual-band semi-closed ultra-surface cavity filter, comprising:
an upper dielectric plate and a lower dielectric plate sequentially stacked;
the upper surface of the upper medium plate is printed with a first metal layer, the lower surface of the upper medium plate is printed with a periodic patch unit, each patch of the periodic patch unit is cut with a plurality of gaps which are sequentially arranged, and the periodic patch unit, the upper medium plate and the first metal layer jointly form the upper surface of the filter;
microstrip line feed structures are arranged on two adjacent sides of the periodic patch unit; the microstrip line feed structure comprises a first feed microstrip line and a second feed microstrip line, and the first feed microstrip line and the second feed microstrip line are arranged vertically in a coplanar manner;
the lower dielectric plate is provided with a concave cavity at a position corresponding to the periodic patch unit, periodic metallized mushroom-shaped structural units are arranged around the concave cavity, and the periodic metallized mushroom-shaped structural units form the cavity wall of the concave cavity;
the lower surface of the lower dielectric plate is printed with a second metal layer, and the second metal layer forms the lower surface of the filter;
and cavity ports are arranged on two adjacent sides of the concave cavity at positions corresponding to the microstrip line feed structures, feeder line through holes are arranged on the cavity ports, and the feeder line through holes penetrate through the second metal layer.
2. The dual-band semi-closed ultra-surface cavity filter according to claim 1, wherein the periodically metallized mushroom-shaped structural unit is composed of a plurality of through holes and corresponding metal patches, the through holes Kong Shuangpai are arranged in parallel around the concave cavity to form the cavity wall of the concave cavity, the through holes penetrate through the second metal layer, and the metal patches are correspondingly arranged above each through hole.
3. The dual-frequency semi-closed super-surface cavity filter according to claim 1, wherein the cavity port comprises a first cavity port and a second cavity port, the first cavity port corresponds to the first feed microstrip line, the second cavity port corresponds to the second feed microstrip line, a first feeder via and a second feeder via are provided at the first cavity port, and a third feeder via and a fourth feeder via are provided at the second cavity port.
4. The dual-band semi-closed ultra-surface cavity filter according to claim 3, wherein the periodic patch unit is a rectangular structural unit formed by a plurality of periodic square patches according to a preset arrangement.
5. A transmission zero control method of the dual-frequency semi-closed ultra-surface cavity filter according to any one of claims 1 to 4, comprising:
acquiring a transmission line model of a periodic patch unit of the double-frequency semi-closed ultra-surface cavity filter;
converting the transmission line model into an expression of forward transmission parameters through an ABCD matrix;
calculating to obtain the position of a transmission zero point according to the expression of the forward transmission parameter;
the position of the transmission zero point is controlled through the periodic parameter of the periodic patch unit and the gap parameter of each patch in the periodic patch unit;
and controlling the number of the transmission zero points through the number of gaps on each patch in the periodic patch unit.
6. The method for controlling transmission zeroes of a dual-band semi-closed ultra-surface cavity filter according to claim 5, wherein the step of obtaining a transmission line model of a periodic patch unit of the dual-band semi-closed ultra-surface cavity filter comprises:
a patch capacitor and a patch inductor exist between every two patches in the periodic patch unit, and a gap capacitor and a gap inductor exist in each gap on each patch;
the patch capacitor and the patch inductor are connected in parallel, the gap capacitor and the gap inductor are connected in parallel, and the two parallel connections are connected in series to form the transmission line model.
7. The transmission zero control method of a dual-band semi-closed ultra-surface cavity filter according to claim 5, wherein the expression of the forward transmission parameter is calculated using the following formula:
wherein ,[ABCD]for transmitting matrix [ a ] 11 a 12 a 21 a 22 ]，A＝a 11 ＝1，B＝a 12 ＝-jwL i /(1-w 2 L i C i )，i＝p,1,2,3，C p and Lp The subscripts 1, 2, and 3 for L and C represent the slot capacitance and slot inductance of each slot on each patch, respectively, and C=a 21 ＝0，D＝a 22 =1, j is an imaginary number, w is the operating angular frequency of the periodic patch unit, Z 0 ′＝377Ω，Z 0 ' is the free space wave impedance.
8. The method of claim 5, wherein the step of controlling the position of the transmission zero by the periodic parameter of the periodic patch unit and the gap parameter on each patch of the periodic patch unit comprises:
the position of the transmission zero point is controlled through the periodic parameters of the periodic patch unit;
and controlling the position of the transmission zero point through the gap parameters on each patch of the periodic patch unit, wherein the gap parameters comprise the gap length, the gap width and the gap distance between two gaps.
9. The method of claim 5, wherein the step of controlling the number of transmission zeros by the number of slots on each patch in the periodic patch unit comprises:
forming a first-order band-stop filter response according to every two coupled gaps to obtain the number of transmission zeros;
and controlling the number of transmission zero points by the number of gaps on each patch in the periodic patch unit, wherein the number of the transmission zero points is the number of the gaps minus one.
10. The method of claim 5, wherein after said controlling the number of transmission zeros by the number of slots on each patch in the periodic patch unit, further comprises:
acquiring a first equivalent circuit of the dual-frequency semi-closed super-surface cavity filter, wherein the first equivalent circuit comprises a cavity port equivalent circuit, a periodic metallized mushroom-shaped structural unit equivalent circuit, a dielectric cavity equivalent circuit and the transmission line model which are connected in parallel;
generating a frequency forbidden band gap according to the parasitic resonance suppression mode of the periodic metallized mushroom structural unit equivalent circuit;
and generating resonant cavity modes with preset numbers in the frequency forbidden band gap according to the frequency forbidden band gap and the dielectric cavity equivalent circuit.
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