CN115985821B - Wafer Bonding Substrate Thinning Method - Google Patents
Wafer Bonding Substrate Thinning Method Download PDFInfo
- Publication number
- CN115985821B CN115985821B CN202310148327.2A CN202310148327A CN115985821B CN 115985821 B CN115985821 B CN 115985821B CN 202310148327 A CN202310148327 A CN 202310148327A CN 115985821 B CN115985821 B CN 115985821B
- Authority
- CN
- China
- Prior art keywords
- wax
- substrate
- filter paper
- face
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a wafer bonding substrate thinning method, which relates to the technical field of semiconductor product preparation, and comprises the following steps: providing a substrate and a wafer, wherein the substrate is provided with a round end face which is attached to the wafer; pasting annular wax-absorbing filter paper on the end face, wherein the wax-absorbing filter paper is coaxial with the end face, the outer diameter of the wax-absorbing filter paper is smaller than the diameter of the end face, and a composite wax area is formed between the wax-absorbing filter paper and the outer edge of the end face; heating the substrate to a first temperature range, applying a first wax to the composite wax region, and curing the first wax; heating the substrate to a second temperature range, wherein the highest temperature of the second temperature range is less than the lowest temperature of the first temperature range; and adding liquid second wax into the ring of the wax-absorbing filter paper, and rotating the substrate at a first rotating speed, so that the second wax flows from inside to outside and covers the first wax film of the composite wax area, solidifying the second wax, wherein the melting point of the second wax is lower than that of the first wax.
Description
Technical Field
The invention relates to the technical field of semiconductor product preparation, in particular to a wafer bonding substrate thinning method.
Background
In the process of wafer bonding and sapphire substrate thinning, a wax layer is required to be applied between a wafer and a sapphire substrate for carrying out a surface mounting process.
In the wax application process, a wax spin coating process is generally adopted, a wax film is spread from inside to outside along with the action of centrifugal force in the wax spin coating process, the wax film is easily accumulated on the edge of a wafer, the concave wax film with high outside and low inside is unevenly distributed on the wax layer, the edge is formed to be protruded after the wax layer is pasted, and the defects of thinner edge, broken edge of the wafer and the like are caused on the wafer after the grinding and polishing processing are finished.
Disclosure of Invention
The invention aims to provide a wafer bonding substrate thinning method, which is used for solving the technical problems that in the conventional waxing process, wax films are easily formed on the edge of a wafer to be accumulated, so that the edge of the wafer is thinner after being thinned due to protruding of the edge after being attached, the edge of the wafer is broken, and the like.
The wafer bonding substrate thinning method provided by the embodiment of the invention comprises the following steps:
s1, providing a substrate and a wafer, wherein the substrate is provided with a round end face which is attached to the wafer;
s2, sticking annular wax-absorbing filter paper on the end face, wherein the wax-absorbing filter paper is coaxial with the end face, the outer diameter of the wax-absorbing filter paper is smaller than the diameter of the end face, and a composite wax area is formed between the wax-absorbing filter paper and the outer edge of the end face;
s3, heating the substrate to a first temperature range, applying first wax to the composite wax area, and curing the first wax to form a first wax film;
s4, adjusting the temperature of the substrate to a second temperature range, wherein the highest temperature of the second temperature range is smaller than the lowest temperature of the first temperature range; adding liquid second wax into the ring of the wax absorbing filter paper, and rotating the substrate at a first rotating speed, so that the second wax flows from inside to outside and covers the first wax film of the composite wax area, solidifying the second wax, wherein the melting point of the second wax is lower than that of the first wax;
s5, bonding the substrate and the wafer through vacuum baking;
s6, thinning the wafer.
Further, the step of applying the first wax to the composite wax area specifically comprises:
the first wax in liquid form is applied to the composite wax region by means of nozzle spraying and the substrate is then rotated at a second rotational speed, which is less than the first rotational speed.
Further, the value range of the second rotating speed is 300r/min-550r/min.
Further, the jet pressure of the jet nozzle is 4.5-5.0atm, the distance from the jet nozzle to the end face is less than 1.5mm, the jet nozzle is flat, and the width of the jet outlet is 2.0-2.5mm.
Further, the thickness of the first wax film is 30% -50% of the total thickness of the wax layer.
Further, the first wax is made of polyethylene wax, and the first temperature is 140-170 ℃.
Further, the lower surface of the wax-absorbing filter paper is connected with the end face through first wax.
Further, the distance between the upper surface and the end face of the wax absorbing filter paper is 0.2-mm-0.3 mm; the diameter of the end face is larger than 6 inches, and the difference between the inner radius and the outer radius of the wax absorbing filter paper is 1cm-2cm.
Further, the second wax is made of phenolic resin type wax, the second temperature range is 75-95 ℃, and the value range of the first rotating speed is 1800 r/min-3900 r/min.
Further, in the step S5, the vacuum degree is controlled below 0.9mBar, the temperature is 100-120 ℃, and the organic volatile matters in the first wax film and the second wax film are removed by baking under the pressure of 0.2-0.3 MPa.
The wafer bonding substrate thinning method provided by the embodiment of the invention comprises the following steps: s1, providing a substrate and a wafer, wherein the substrate is provided with a round end face which is attached to the wafer; s2, sticking annular wax-absorbing filter paper on the end face, wherein the wax-absorbing filter paper is coaxial with the end face, the outer diameter of the wax-absorbing filter paper is smaller than the diameter of the end face, and a composite wax area is formed between the wax-absorbing filter paper and the outer edge of the end face; s3, heating the substrate to a first temperature range, applying first wax to the composite wax area, and curing the first wax to form a first wax film; s4, adjusting the temperature of the substrate to a second temperature range, wherein the highest temperature of the second temperature range is smaller than the lowest temperature of the first temperature range; adding a liquid second wax into the ring of the wax-absorbing filter paper, and rotating the substrate at a first rotation speed, so that the second wax flows from inside to outside and covers the first wax film of the composite wax area, and solidifying the second wax to form a second wax film, wherein the melting point of the second wax is lower than that of the first wax; s5, bonding the substrate and the wafer through vacuum baking; s6, thinning the wafer. In order to avoid the problem that the wax film is stacked on the edge of the wafer and the film layer is uneven, in the scheme, the wax absorbing filter paper is arranged on the end face, the first wax film is prepared on the composite wax area, and the first wax film can form a step structure on the end face. The wax-absorbing filter paper having a thickness has the ability to absorb the second wax and increase the resistance of the second wax to flow toward the outer edge of the substrate during the film formation of the second wax application. Meanwhile, the step structure formed by the first wax film can increase the flowing resistance of the second wax towards the outer edge of the substrate, so that the second wax receives a certain resistance in centrifugal movement, and therefore the second wax has different flowing speeds and flowing capacities in different areas such as a composite wax area, the surface of the wax-absorbing filter paper and the inner ring of the wax-absorbing filter paper, especially the inner ring retaining time and retaining quantity of the wax-absorbing filter paper are increased, the film forming thickness of a central area is increased, the flowing resistance of the second wax on the surfaces of the composite wax area and the wax-absorbing filter paper is increased, the film thickness increasing trend of the edge areas such as the composite wax area is reduced, the accumulation of the wax film formed on the edge of a wafer is avoided, and the non-uniformity problem of a film layer is remarkably improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a side view of step S2 of a wafer bonded substrate thinning method according to an embodiment of the present invention;
fig. 2 is a top view of a substrate in step S2 of a wafer bonded substrate thinning method according to an embodiment of the present invention;
fig. 3 is a side view of step S3 of a wafer bonded substrate thinning method according to an embodiment of the present invention;
fig. 4 is a side view of step S4 of the wafer bonded substrate thinning method according to the embodiment of the present invention.
Icon: 1-wax absorbing filter paper; 2-a composite wax zone; 3-a first wax film; 4-a second wax film; 5-a substrate; 6-nozzle.
Detailed Description
The technical solutions of the present invention will be clearly and completely described in connection with the embodiments, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Fig. 1 to 4 are only schematic views, and an obvious dividing line is drawn between the first wax, the second wax and the wax-absorbing filter paper, and in practice, the wax-absorbing filter paper has a wax-absorbing function, so that there is no obvious dividing line between the wax-absorbing filter paper and the first wax and the second wax, respectively.
The wafer bonding substrate thinning method provided by the embodiment of the invention comprises the following steps:
step S1, providing a substrate 5 and a wafer, wherein the substrate 5 is provided with a round end face which is attached to the wafer.
The material of the substrate 5 may be sapphire, and when the substrate 5 is bonded to a wafer, the end face of the substrate 5 may be first waxed to form a wax layer.
S2, sticking annular wax-absorbing filter paper 1 on the end face, wherein the wax-absorbing filter paper 1 is coaxial with the end face, the outer diameter of the wax-absorbing filter paper 1 is smaller than the diameter of the end face, and a composite wax area 2 is formed between the wax-absorbing filter paper 1 and the outer edge of the end face.
As shown in fig. 1 and 2, the wax-absorbing filter paper 1 is in a ring shape, and a gap is formed between the outer edge of the wax-absorbing filter paper 1 and the outer edge of the end face, so as to prepare for the subsequent application of the first wax. The wax absorbing filter paper 1 and the end face can be connected by using common adhesive, in this embodiment, the first wax can be used for adhesion connection, so that the introduction of other materials can be reduced as much as possible, and when the subsequent wafer is separated from the substrate 5, the wax absorbing filter paper 1 can be removed by heating, so that no mark is left conveniently.
Further, the distance between the upper surface and the end face of the wax absorbing filter paper 1 is 0.2-mm-0.3 mm; the diameter of the end face can be 6 inches, and the difference between the inner radius and the outer radius of the wax absorbing filter paper 1 is 1cm-2cm.
Step S3, heating the substrate 5 to a first temperature range, applying the first wax to the composite wax area 2, and curing the first wax to form the first wax film 3.
As shown in FIG. 3, the first wax may be a polyethylene wax, also known as a polymer wax, having a melting point varying with molecular weight, and in this embodiment, a polyethylene wax having a melting point of 96-115℃and a viscosity (CPS 140 ℃) of 120-300CPS is selected. Prior to waxing, the substrate 5 is heated to above 140 ℃, preferably 140 ℃ to 170 ℃. The application of wax can be accomplished on the annular composite wax section 2 by rotating the substrate 5 and spraying the first wax. Specifically, in this step, the first wax in a liquid state is sprayed by the nozzle 6, and then the substrate 5 is rotated at a rotation speed of 300r/min to 550r/min. In order to spread the first wax over the composite wax area 2, a portion of the first wax may be sprayed onto the wax-absorbing filter paper 1. The jet pressure of the nozzle 6 is 4.5-5.0atm, the vertical distance from the nozzle 6 to the end face is less than 1.5mm, the nozzle 6 is flat, the width of the jet outlet is 2.0-2.5mm, and the radial moving speed of the nozzle 6 can be 1.1-1.4cm/s, so as to cover the composite wax area 2. After spraying for a certain period of time, when the thickness of the first wax is expected to be 30% -50% of the total thickness of the wax layer, stopping spraying, and solidifying the first wax after heating, so that the first wax is cooled to form a first wax film 3, wherein the top surface of the first wax film 3 is higher than the top surface of the wax absorbing filter paper 1.
In order to avoid the problems of less or missing first wax at the edge caused by the over high rotation speed, good compounding of different waxes and the like, the first wax film can be formed by spraying polyethylene wax first, then rotating the substrate at a low speed, or the first wax film 3 can be formed by spraying polyethylene wax in a state that the substrate rotates at a low speed, and then rotating at a high speed. Because the rotation speed is low (300 r/min-550 r/min), the smoothness of the surface of the first wax film is low, a larger bonding area is provided between the first wax film and the second wax, the first wax film 3 and the second wax are combined into a whole, the problem that the second wax is easy to separate from the substrate 5 and the like can be avoided, the good bonding of the second wax and the first wax film 3 is realized, the defect of a wax layer at the edge of the substrate 5 is avoided, and the uniformity of the film layer is improved.
The distance between the upper surface and the end face of the wax-absorbing filter paper 1, i.e. the height of the wax-absorbing filter paper 1, can be in the range of 0.2-0.3mm. The height is too high, the difficulty of compositing the second wax with the first wax film after passing through the wax-absorbing filter paper 1 is increased, and uneven film formation is caused; while the thickness of the wax-absorbing filter paper 1 is too low to provide a small resistance, losing the effect of absorbing the second wax and adjusting the flow capacity of the second wax.
For polyethylene wax (first wax) with the melting point of 96-115 ℃, the substrate 5 is heated to 140 ℃ or higher, preferably 140-170 ℃, the polyethylene wax has better fluidity and overhigh temperature, and the polyethylene wax has overhigh fluidity, so that the problems of wax deficiency, overlarge film layer and the like occur at the edge; the temperature is too low, the fluidity of the polyethylene wax is poor, and the coating effect is poor.
In the preparation of the first wax film 3, if the wax is applied by spraying alone, the coating is uneven, and the partial annular wax application cannot be realized by rotating the wax alone, therefore, in this embodiment, the precise and uniform application of the first wax with a set thickness in a partial area can be realized by adopting a composite wax application mode of uniformly coating the wax on the substrate 5 by rotating the substrate at a low speed after the spraying. In the step, the wax is applied in a rotating way at the rotating speed of 300-550r/min, the rotating speed is too high, the thickness of the edge of the polyethylene wax is thickened, and the non-uniformity is increased; the spin speed was too low and the sprayed polyethylene wax could not be spread.
The thickness of the solidified first wax is 30% -50% of the total thickness of the wax layer for bonding, and is lower than the thickness, so that the first wax is not easy to realize local coating; above the thickness, the first wax is coated at a low speed with uneven surface and too high thickness to completely compensate for the uneven coating by the second wax coating, resulting in reduced overall uniformity of the wax layer.
In the spraying process, the non-uniformity of the first wax spraying can be avoided as much as possible by increasing the compressed air pressure, spraying by a short distance (the distance is less than 1.5 mm) and adapting to the small nozzle 6 of annular spraying, and the degree of combination with the substrate 5 is improved.
Step S4, adjusting the temperature of the substrate 5 to a second temperature range, wherein the highest temperature of the second temperature range is smaller than the lowest temperature of the first temperature range; a second wax in liquid form is added to the loop of the wax-absorbing filter paper 1 and the substrate 5 is rotated at a first rotational speed so that the second wax flows from inside to outside and covers the first wax film of the composite wax section 2, and the second wax is solidified to form a second wax film 4, the melting point of the second wax being lower than that of the first wax.
As shown in fig. 4, in the present embodiment, the first wax is a high melting point wax and the second wax is a low melting point wax, and when the second wax is applied, the temperature of the substrate 5 is adjusted to 100 ℃ or lower, and it is necessary to adjust the temperature of the substrate 5 to 100 ℃ or lower, preferably 75 to 95 ℃ by heating or cooling, etc. in consideration of the temperature of the substrate 5 after the solidification of the first wax in step S3, the first wax is still solid. And adding liquid second wax at the center of the end face, rotating the substrate 5 at a rotating speed of 1800-3900r/min, preferably 2100-3600r/min, and gradually spreading the second wax from inside to outside on the inner part of the wax-absorbing filter paper 1, the surface of the wax-absorbing filter paper 1 and the surface of the first wax, so that the wax layer becomes a uniform layer structure, and the total thickness of the wax layer is 0.6-0.9mm. The total thickness of the wax layer in the inner side of the ring of the wax-absorbing filter paper 1 means the thickness of the second wax film 4, and in the composite wax area 2 means the sum of the thicknesses of the first wax film 3 and the second wax film 4 solidified thereabove.
The diameter of the wafer can be larger than 15.24cm (6 inches), and the wafer with large size is more easily cracked due to external influence such as vibration when thinned. In this embodiment, by applying the polyethylene wax at a high temperature to the composite wax region 2 of the substrate 5, and then reducing the temperature until the polyethylene wax is in a molten state or a solid state, the polyethylene wax is made to adhere to the end face of the substrate 5 and form the first wax film 3, and the second wax is applied to the upper layer of the polyethylene wax by rotation, so that a structure in which the polyethylene wax and the second wax coexist in the composite wax region 2 is formed, the cured polyethylene wax plays a supporting role, and by application of two different waxes, a better shock absorbing and buffering effect is provided at the edge region of the end face and the supporting role of the edge wax layer is improved. The annular composite wax areas 2 can provide circumferential support after bonding, and further avoid the possibility of through cracks penetrating through two sides of the wafer. Thereby providing better vibration-proof splinter performance for the wafer, and especially avoiding the possibility of splinter of ultrathin wafer with more than 6 inches.
The wax absorbing filter paper 1 with a certain thickness has the functions of absorbing the second wax and increasing the resistance of the second wax flowing to the outer edge of the substrate 5 in the process of applying the second wax to form a film, meanwhile, the step structure formed by the first wax film can also increase the resistance of the second wax flowing to the outer edge of the substrate, so that the second wax receives a certain resistance in centrifugal motion, and the second wax has different flowing rates and flowing capacities in different areas such as the composite wax area 2, the surface of the wax absorbing filter paper 1, the inner ring of the wax absorbing filter paper 1 and the like, especially increases the retention time and the retention quantity in the inner ring of the wax absorbing filter paper 1, improves the film forming thickness in the central area, increases the flowing resistance of the second wax in the composite wax area 2 and the surface of the wax absorbing filter paper 1, reduces the trend of increasing the film thickness in the edge areas such as the composite wax area 2 and the like, thereby avoiding the accumulation of the wax film formed at the edge of a wafer and remarkably improving the non-uniformity of the film layer.
The second wax is added at the center of the circle, so that the second wax can be uniformly coated, the temperature is too high, the fluidity is too high, and the thickness at the edge is increased; the temperature is too low and the fluidity is insufficient, so that multi-zone wax coating is not formed. The high-speed rotation (1800-3900 r/min, preferably 2100-3600 r/min) ensures that the second wax film 4 is in a uniform layer structure, the process time is shortened, the production efficiency is improved, the speed is too high, the thickness of the edge of the second wax is increased, the uniformity is not improved, the speed is too low, the flow rate of the second wax is low, and the production efficiency is not high. The total thickness of the coating wax can be 0.6-0.9mm, so that a better bonding effect is provided, and the bonding effect is obviously influenced by the excessive or low thickness.
The second wax may be a phenolic resin type liquid wax providing better flowability, comprising the following components (parts by weight): 65-74 parts of phenolic resin, 6-7 parts of hydrogenated rosin, 26-35 parts of small molecular alcohol and 70-85cps of viscosity at room temperature, so that better fluidity is provided, and the wax forming film has good uniformity and is easy to spin uniformly.
And S5, bonding the substrate 5 and the wafer through vacuum baking.
When vacuumizing, the vacuum degree is controlled below 0.9mBar, the temperature is raised to 100-120 ℃, preferably 110-115 ℃, and the pressure of 0.2-0.3MPa is applied to bake and remove organic volatile matters in wax, etc. to realize the bonding of the substrate 5 and the wafer; through the control of the vacuum degree, the temperature and the bonding pressure, the wafer and the substrate 5 can be effectively bonded under the condition that the wafer is not waxed on the basis of single-sided uniform waxing of the substrate 5, the uniformity of the formed wax layer is high, the bonding force is strong, the problems of separation and the like in the subsequent working procedures are avoided, the warping degree of a finished wafer product is effectively reduced, and the problems of cracking and the like are avoided.
S6, thinning the wafer.
The wafer may be thinned by grinding and polishing.
And S7, removing the wax layer through heating, applying a wax removing agent and other procedures to obtain the wafer. And the substrate 5 is heated to 80-90 ℃ to realize the melting and separation of the second wax film 4 at low temperature, so that the influence on the wafer is small, and the risks of edge cracking and the like during separation are reduced.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (10)
1. A method of thinning a wafer bonded substrate, comprising the steps of:
s1, providing a substrate (5) and a wafer, wherein the substrate (5) is provided with a round end face which is attached to the wafer;
s2, sticking annular wax-absorbing filter paper (1) on the end face, wherein the wax-absorbing filter paper (1) is coaxial with the end face, the outer diameter of the wax-absorbing filter paper (1) is smaller than the diameter of the end face, and a composite wax area (2) is formed between the wax-absorbing filter paper (1) and the outer edge of the end face;
s3, heating the substrate (5) to a first temperature range, applying first wax to the composite wax area (2), and curing the first wax to form a first wax film (3);
s4, adjusting the temperature of the substrate (5) to a second temperature range, wherein the highest temperature of the second temperature range is smaller than the lowest temperature of the first temperature range; adding a liquid second wax into the ring of the wax-absorbing filter paper (1), and rotating the substrate (5) at a first rotation speed, so that the second wax flows from inside to outside and covers the first wax film (3) of the composite wax area (2), and solidifying the second wax to form a second wax film (4), wherein the melting point of the second wax is lower than that of the first wax;
s5, bonding the substrate (5) and the wafer through vacuum baking;
s6, thinning the wafer.
2. The method for thinning a wafer bonded substrate according to claim 1, wherein the step of applying the first wax to the composite wax area (2) comprises:
the liquid first wax is applied to the composite wax zone (2) by means of spraying with a nozzle (6), and the substrate (5) is then rotated at a second rotational speed, which is less than the first rotational speed.
3. The method for thinning a wafer bonded substrate according to claim 2, wherein the value of the second rotation speed ranges from 300r/min to 550r/min.
4. The wafer bonding substrate thinning method according to claim 2, characterized in that the ejection pressure of the nozzle (6) is 4.5-5.0atm, the distance from the nozzle (6) to the end face is less than 1.5mm, the nozzle (6) is flat, and the width of the ejection outlet thereof is 2.0-2.5mm.
5. The wafer bonded substrate thinning method according to claim 1, characterized in that the thickness of the first wax film (3) is 30% -50% of the total thickness of the wax layer.
6. The method of claim 1, wherein the first wax is polyethylene wax and the first temperature is in the range of 140 ℃ to 170 ℃.
7. The method for thinning a wafer bonded substrate according to claim 1, wherein the lower surface of the wax suction filter paper (1) is connected to the end face by the same material as the first wax.
8. The method for thinning the wafer bonded substrate according to claim 7, wherein a distance between an upper surface and an end face of the wax absorbing filter paper (1) is 0.2-mm-0.3 mm; the diameter of the end face is larger than 6 inches, and the difference between the inner radius and the outer radius of the wax absorbing filter paper (1) is 1cm-2cm.
9. The method of claim 1, wherein the second wax is phenolic resin wax, the second temperature is 75-95 ℃, and the first rotational speed is 1800-r/min-3900 r/min.
10. The method according to claim 1, wherein in the step S5, the vacuum degree is controlled to be less than 0.9mBar, the temperature is 100 ℃ to 120 ℃, and the pressure of 0.2 MPa to 0.3MPa is applied to bake and remove the organic volatile matters in the first wax film (3) and the second wax film (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310148327.2A CN115985821B (en) | 2023-02-22 | 2023-02-22 | Wafer Bonding Substrate Thinning Method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310148327.2A CN115985821B (en) | 2023-02-22 | 2023-02-22 | Wafer Bonding Substrate Thinning Method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115985821A CN115985821A (en) | 2023-04-18 |
| CN115985821B true CN115985821B (en) | 2023-08-22 |
Family
ID=85970948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310148327.2A Active CN115985821B (en) | 2023-02-22 | 2023-02-22 | Wafer Bonding Substrate Thinning Method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115985821B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007243082A (en) * | 2006-03-13 | 2007-09-20 | Sumitomo Electric Ind Ltd | DIMPLELESS GaAs WAFER STICKING METHOD |
| CN102490439A (en) * | 2011-12-15 | 2012-06-13 | 天津中环领先材料技术有限公司 | Waxy surface mount device process adopting zone-melt single crystal silicon double-side polished chip for IGBT (insulated gate bipolar transistor) |
| CN102779730A (en) * | 2012-08-09 | 2012-11-14 | 合肥彩虹蓝光科技有限公司 | Wax removal method for semiconductor wafer grinding process |
| CN111211040A (en) * | 2020-01-09 | 2020-05-29 | 映瑞光电科技(上海)有限公司 | Wafer thinning method, jig and waxing device |
| CN114310653A (en) * | 2021-11-29 | 2022-04-12 | 山东有研半导体材料有限公司 | Wax-containing surface mounting process for high-quality geometric parameter polishing sheet |
-
2023
- 2023-02-22 CN CN202310148327.2A patent/CN115985821B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007243082A (en) * | 2006-03-13 | 2007-09-20 | Sumitomo Electric Ind Ltd | DIMPLELESS GaAs WAFER STICKING METHOD |
| CN102490439A (en) * | 2011-12-15 | 2012-06-13 | 天津中环领先材料技术有限公司 | Waxy surface mount device process adopting zone-melt single crystal silicon double-side polished chip for IGBT (insulated gate bipolar transistor) |
| CN102779730A (en) * | 2012-08-09 | 2012-11-14 | 合肥彩虹蓝光科技有限公司 | Wax removal method for semiconductor wafer grinding process |
| CN111211040A (en) * | 2020-01-09 | 2020-05-29 | 映瑞光电科技(上海)有限公司 | Wafer thinning method, jig and waxing device |
| CN114310653A (en) * | 2021-11-29 | 2022-04-12 | 山东有研半导体材料有限公司 | Wax-containing surface mounting process for high-quality geometric parameter polishing sheet |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115985821A (en) | 2023-04-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6436851B1 (en) | Method for spin coating a high viscosity liquid on a wafer | |
| US9716023B2 (en) | Methods for temporarily bonding a device wafer to a carrier wafer, and related assemblies | |
| EP0452186B1 (en) | Process to obtain thermofusible and autoadhesive blocks with non sticking surface | |
| CN115985821B (en) | Wafer Bonding Substrate Thinning Method | |
| CN111604236B (en) | Glue coating method for ultrathin wafer with taiko ring structure as substrate | |
| CN103182676B (en) | Grinding pad, the lapping device using this grinding pad and Ginding process | |
| CN102527574A (en) | Device and method for spraying photoresist | |
| GB2306359A (en) | Wafer polishing method and apparatus | |
| CN110625460A (en) | Planarization process method for wafer-level heterostructure | |
| CN112247713A (en) | Wafer grinding equipment and method for semiconductor chip packaging process | |
| US6051481A (en) | Method and device for bonding two plate-shaped objects | |
| CN115446726A (en) | Polishing method for improving flatness of silicon wafer | |
| TWI510331B (en) | Conditioner disk used in chemical mechanical polishing process and method for making the same | |
| CN115036208A (en) | Wafer spin coating method | |
| JP2008153248A (en) | METHOD FOR COATING GaAs WAFER WITH WAX | |
| JP3778544B2 (en) | Ceramic member and manufacturing method thereof, table for wafer polishing apparatus | |
| JP3505187B2 (en) | Glassy carbon and method for producing the same | |
| JP2006188428A (en) | Ceramic member and table for wafer polishing device | |
| CN113578656A (en) | Preparation method of TPU (thermoplastic polyurethane) hot melt adhesive film | |
| JP2009272590A (en) | Method of manufacturing semiconductor device, polishing wheel for semiconductor wafer, and processing apparatus of semiconductor wafer | |
| CN111672721A (en) | Lens mechanism diameter waxing and film coating process | |
| KR100628018B1 (en) | Beveling wheel for processing outer circumference part of silicone wafer and manufacturing method of the same | |
| JPS63200865A (en) | Method for coating optical disk with protective film | |
| TW201431614A (en) | Coat formation method, coat formation device, and method for producing semiconductor chip | |
| CN214519543U (en) | Single-chip wafer bearing base for polishing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |