JP2009272590A - Method of manufacturing semiconductor device, polishing wheel for semiconductor wafer, and processing apparatus of semiconductor wafer - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device capable of improving handling property of a thinned wafer, polishing wheel of semiconductor wafer, and a processing apparatus of a semiconductor wafer. <P>SOLUTION: The method includes a step of forming a recessed part in the backside of a wafer by selectively polishing an inner peripheral region in the backside of a wafer 10 and forming an outer peripheral reinforcing part 1c thicker than the inner peripheral region in an outer peripheral region; a step of filling diatouch member 51 in the recessed part; and a step of making the wafer 10 into a plurality of chips. The diatouch member 51 is an adhesive for die bonding used when die bonding a chip, and in a die bonding step, the diatouch member 51 is used as an adhesive as it us. By planarizing the backside of the wafer 10, it is possible to stick a dicing tape to the backside of the wafer, thereby making the wafer into a plurality of chips. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor device manufacturing method, a semiconductor wafer grinding wheel, and a semiconductor wafer processing apparatus, and more particularly to a semiconductor device manufacturing method capable of improving the handling properties of a thinned wafer.

  In recent years, semiconductor wafers have been required to be thin in order to reduce the size and weight of various electronic devices. Usually, when the wafer is thinned by back grinding, the wafer itself is bent or warped, so that handling is not easy. As a solution, a technique is known in which only the inner peripheral portion of the wafer is ground while leaving the outer peripheral portion of the wafer.

JP2007-19379

  When the wafer is divided into chips by dicing, it may be necessary to attach a tape member to the back surface of the wafer. However, in a state where the inner peripheral portion of the wafer back surface is ground, there is a step between the outer peripheral portion and the inner peripheral portion of the wafer back surface, and the tape member cannot be attached due to the step. This is a problem because dicing cannot be performed. Further, if dicing is performed with the wafer fixed to the table with a step on the back surface of the wafer, the inner peripheral portion of the wafer may be bent and cracked, so that dicing cannot be performed.

  Moreover, in order to correspond to a dicing process, an outer peripheral part may be cut | disconnected. However, this is a problem because the process of cutting the outer periphery increases. Moreover, since handling property (shape retention stabilization) is impaired, it is a problem.

  The present invention has been made to solve at least one of the problems of the background art, and a method for manufacturing a semiconductor device capable of improving the handleability of a thinned wafer without increasing the number of steps. The present invention proposes to provide a semiconductor wafer grinding wheel and a semiconductor wafer processing apparatus.

  In the method of manufacturing a semiconductor device according to the present disclosure, a recess is formed on the back surface of the wafer by selectively grinding the inner periphery region of the back surface of the wafer and forming an outer periphery reinforcing portion thicker than the inner periphery region in the outer periphery region. The method includes a step, a step of filling the concave portion with a filler made of a die bonding adhesive or a film adhesive, and a step of dividing the wafer into a plurality of chips.

  A concave portion is formed on the back surface of the wafer. Then, a filler is buried in the recess. Therefore, since the wafer back surface is made flat, a dicing tape can be attached to the back surface, and the wafer can be divided into a plurality of chips by dicing. Further, by filling the concave portion with the filler, it is possible to prevent the hollow portion from being formed in the inner peripheral portion of the wafer. Therefore, the inner peripheral area of the wafer can be prevented from being bent and cracked during dicing, so that dicing is possible.

  The filler is an adhesive for die bonding used when die-bonding chips, or an adhesive for film that fixes a wafer to a film used when dicing. Therefore, in the dicing process and die bonding process performed after the process of filling the filler, it is possible to use the filler as an adhesive as it is. As described above, since the concave portion is planarized using a material used in a later step, it is possible to prevent an increase in the number of steps.

  In the semiconductor wafer grinding wheel of the present disclosure, the first disk-shaped wheel attached to the tip of the spindle has a diameter smaller than the diameter of the first wheel, and the rotation axis of the spindle is common. A disc-shaped second wheel attached integrally with the wheel, and the distance between the surface perpendicular to the rotation axis of the first wheel and the surface perpendicular to the rotation axis of the second wheel can be adjusted. It is characterized by that.

  Since the diameter of the second wheel is smaller than that of the first wheel, the cross-sectional shape of the grinding wheel is convex toward the tip side of the spindle. Therefore, there is a step between a plane perpendicular to the rotation axis of the first wheel and a plane perpendicular to the rotation axis of the second wheel. Then, by grinding the inner peripheral region of the back surface of the wafer with a surface perpendicular to the rotation axis of the second wheel, and grinding the outer peripheral region of the back surface of the wafer with a surface perpendicular to the rotation axis of the first wheel, The step of the grinding wheel is transferred to the back surface of the wafer, and the outer peripheral area of the back surface of the wafer becomes higher than the inner peripheral area by the height of the step. Therefore, a recess can be formed on the back surface of the wafer.

  Further, since the level difference of the grinding wheel is transferred to the back surface of the wafer, the depth of the recess is the distance between the surface perpendicular to the rotation axis of the first wheel and the surface perpendicular to the rotation axis of the second wheel. Is equal to And since the said distance can be adjusted, the depth of a recessed part can also be adjusted.

  Further, by using a grinding wheel in which the first wheel and the second wheel are integrated, the inner peripheral region and the outer peripheral region can be ground at the same time, so that it is possible to increase the efficiency of the grinding process for forming the recess. Become.

  In the semiconductor wafer processing apparatus of the present disclosure, a table for holding the wafer, a polishing wheel for polishing the wafer held by the table, a supply unit for supplying a liquid filler to the wafer held by the table, and the wafer A polishing portion that solidifies the filler supplied to the spindle, and the polishing wheel has a disk-shaped first wheel attached to the tip of the spindle, a diameter smaller than the diameter of the first wheel, and the spindle A disc-shaped second wheel that is integrally attached to the first wheel so as to have a common rotation axis of the first wheel, a plane perpendicular to the rotation axis of the first wheel, and a perpendicular to the rotation axis of the second wheel The distance to the smooth surface is adjustable.

  The semiconductor wafer processing apparatus includes a grinding mechanism (grinding wheel), a filling mechanism (supplying unit), and a solidifying mechanism (solidifying unit). The step of the grinding wheel is transferred to the back surface of the wafer by the grinding wheel, and the outer peripheral area of the back surface of the wafer becomes higher than the inner peripheral area by the height of the step, so that a recess can be formed in the wafer. And a liquid filler can be filled into a recessed part with a supply part. And a filler can be solidified by the solidification part.

  Thus, by providing the wafer processing apparatus with a grinding mechanism, a filling mechanism, and a solidifying function, the wafer is in a state where the back surface is flat and the shape can be maintained after the processing by the processing apparatus is completed. Therefore, special handling is not required in the subsequent process, and the wafer can be processed with the current apparatus.

  According to the semiconductor device manufacturing method, the semiconductor wafer grinding wheel, and the semiconductor wafer processing apparatus of the present disclosure, the semiconductor device manufacturing capable of improving the handling property of the thinned wafer without increasing the number of steps. It becomes possible to provide a method and the like.

  A wafer processing apparatus 2 according to the present disclosure is shown in FIGS. 1 and 2. As shown in FIG. 1, the wafer processing apparatus 2 includes a suction table 20, a spindle 22, and a grinding wheel 23. The suction table 20 is a table that can rotate while holding the wafer 10. The spindle 22 can move up and down and can move in the plane direction of the wafer 10. A grinding wheel 23 is attached to the tip of the spindle.

  As shown in FIG. 2, the grinding wheel 23 includes an upper grinding wheel 24 and a lower grinding wheel 25. The upper grinding wheel 24 has a disk shape with a diameter DD 1 and is attached to the spindle 22. The lower grinding wheel 25 has a disk shape with a diameter DD2, and is attached integrally with the upper grinding wheel 24 so that the rotation axis of the spindle 22 is common. Since the diameter DD2 is smaller than the diameter DD1, the cross-sectional shape of the grinding wheel is convex toward the tip side of the spindle 22. Therefore, there is a step having a distance H1 between the lower surface 24a that is a surface perpendicular to the rotation axis of the upper grinding wheel 24 and the lower surface 25a that is a surface perpendicular to the rotation axis of the lower grinding wheel 25. It is formed. The distance H1 can be adjusted. Depending on the value of the distance H1, the depth CD of the recess of the wafer back surface 10b described later is determined. A grinding wheel is fixed to the lower surfaces 24a and 25a. Further, the width W2 of the lower surface 24a is made larger than the width Wc of the outer peripheral reinforcing portion 1c described later.

  An embodiment of a semiconductor wafer processing method according to the present disclosure will be described with reference to FIGS. 3 to 11. FIG. 3 shows a flow of the processing method. In S <b> 1, the surface protection tape GT is attached to the surface Wa of the wafer 10.

  In S <b> 2, backside grinding of the wafer 10 is performed using the wafer processing apparatus 2. First, the wafer 10 is turned over, and the protection member 1 side is fixed to the suction table 20, so that the wafer back surface 10b faces the grinding wheel 23 as shown in FIG. Grinding of the wafer back surface 10b is performed when the grinding wheel 23 that rotates with the rotation of the spindle 22 descends and contacts the wafer back surface 10b. At this time, the spindle 22 can freely move forward, backward, left and right in the horizontal direction of the wafer 10. The lower surface 25a grinds the inner peripheral area of the wafer back surface 10b, and the lower surface 24a grinds the outer peripheral area of the wafer back surface. At this time, since the grinding of the inner peripheral region and the grinding of the outer peripheral region are performed simultaneously, the efficiency of the grinding process is increased. As a result, the step of the grinding wheel 23 is transferred to the wafer back surface 10b, so that a recess having the outer peripheral reinforcing portion 1c is formed in the wafer 10 as shown in FIG. The difference in height between the outer peripheral reinforcing portion 1c and the inner peripheral region becomes the depth CD of the recess, and the value of the depth CD is equal to the distance H1.

  The initial thickness of the wafer 10 before grinding is about 500 to 800 (μm). In the wafer 10 after grinding, the thickness OT of the outer peripheral reinforcing portion 1c is set to 100 to 200 (μm), and the thickness IT of the inner peripheral region is set to 30 to 100 (μm). The depth CD of the recess is set to about 50 (μm) or less.

  The effect of reducing the thickness OT of the outer periphery reinforcing portion 1c will be described. When the thickness OT is not reduced, the difference in height between the outer peripheral reinforcing portion 1c and the inner peripheral region is increased, and the depth CD of the concave portion is increased to several hundred to 700 (μm). When the die attach material 51 is filled so as to flatten the deep concave portion, the thickness of the die attach material 51 is also increased to several hundred to 700 (μm). However, usually, die bonding is possible if the thickness of the die attach material is about 50 μm, and if the thickness of the die attach material becomes larger than this, the cutting blade 35 does not reach the lower part of the die attach material in the dicing process. For this reason, dicing becomes difficult. Therefore, it is preferable to reduce the depth CD of the recesses to about 50 (μm) or less by reducing the thickness OT of the outer peripheral reinforcing portion 1c. It is necessary to increase the thickness of the outer peripheral reinforcing portion 1c to such an extent that the shape retention stability of the wafer 10 is not lost. Therefore, the thickness of the outer peripheral reinforcing portion 1c may be appropriately determined depending on the balance between the dicing ease of the die attach material and the shape retention stability of the wafer 10.

  In S <b> 3, the die attach material is filled in the concave portion of the wafer 10. As shown in FIG. 5, the liquid die attach material 51 is filled by being poured from the nozzle 31 into the recess. Here, the die attach material 51 is a bonding material for bonding and fixing the chip to a lead frame or a package. Examples of the die attach material 51 include polyimide and epoxy resins.

  In S4, the die attach material 51 filled in the recess is flattened. As a flattening method, first, there is a method of extending the die attach material 51 to the outer peripheral portion of the wafer 10 by centrifugal force by rotating the suction table 20. When the filling amount of the die attach material 51 is larger than the volume of the recess, the die attach material 51 overflows from the outer peripheral portion of the wafer 10, so that the surface of the outer peripheral reinforcing portion 1 c and the surface of the liquid surface of the die attach material 51 are separated. By becoming substantially the same plane, the back surface of the wafer is flattened. On the other hand, when the filling amount of the die attach material 51 is smaller than the volume of the concave portion, the surface of the liquid surface of the die attach material 51 becomes lower than the surface of the outer peripheral reinforcing portion 1c, so that the wafer back surface is not flattened. Therefore, it is preferable from the viewpoint of ensuring flatness that the filling amount of the die attach material 51 is larger than the volume of the recess.

  Next, as a flattening method, as shown in FIG. 6, there is a method in which the squeegee 32 (a spatula member) sweeps on the reference surface with the surface of the outer peripheral reinforcing portion 1c as a reference surface. Thereby, since the die attach material 51 existing above the reference surface is removed by the squeegee 32 (a spatula member), the flatness of the wafer back surface can be further improved.

  In S5, the filled die attach material 51 is primarily solidified. As shown in FIG. 7, the die attach material 51 can be primarily solidified by heating the surface of the die attach material 51 at a low temperature (120 ° C. or less) using the heater 33. The die-attach material 51 that has been primarily solidified has thermoplasticity, and has the property of being softened again when heated during die bonding. Therefore, the die attach material 51 can be used as a filler for flattening the recess. The heating may be performed by heating the suction table 20. Solidification may be performed by UV (UltraViolet) light.

  Thus, by providing the wafer processing apparatus 2 with a filling mechanism, a flattening mechanism, and a primary solidification function, the wafer 10 is maintained in a state in which the back surface is flat and the shape can be maintained after the processing in the wafer processing apparatus 2 is completed. Can be taken out. The processed wafer 10 is conveyed to a tape mounting process by a frame (metal ring-shaped jig).

  In S6, a tape mounting process is performed. As shown in FIG. 8, the dicing tape 42 is fixed to the frame 41. The tape 42 has a two-layer structure including a glue layer 43 with a thickness of about 10 to 20 (μm) and a base material layer 44 with a thickness of about 100 (μm), and the glue layer 43 is the upper surface. As shown in FIG. Then, the wafer 10 filled with the die attach material 51 is attached to the tape 42 so that the wafer surface 10a on which the circuit is formed faces upward. At this time, since the wafer back surface 10b is flattened, the tape 42 can be attached to the wafer back surface 10b.

  In S7, dicing is performed. As shown in FIG. 9, a cutting blade 35 rotating at a high speed is cut into a dicing line, and the wafer 10 is divided into chips. At this time, the die attach material 51 embedded in the recess is also cut off together with the wafer 10. The die attach material 51 filled in the recesses prevents the hollow portion from being formed in the inner peripheral portion of the wafer 10 and prevents the wafer 10 from being bent. be able to. Therefore, the wafer 10 can be diced using existing technology and equipment for a wafer that has not been thinned.

  When the dicing is completed, UV light is irradiated from the back surface of the tape 42 using an ultraviolet lamp 36 as shown in FIG. As a result, the glue layer 43 is solidified and the adhesive strength of the glue layer 43 is reduced.

  As shown in S8, die bonding is performed. As shown in FIG. 11, the separated chip 11 is picked up by the pickup nozzle 34 with the die attach material 51 attached, and moved to the substrate 12. Then, the chip is brought into close contact with the substrate 12 and heated. At this time, the die attach material 51 can be secondarily solidified by heating at a high temperature (about 200 ° C.). The secondary solidified die attach material 51 is thermoset and does not have thermoplasticity.

  As described above, in the wafer processing apparatus 2 and the semiconductor wafer processing method according to the present embodiment, the tape 42 is attached to the wafer back surface by filling the concave portion of the wafer back surface 10b with the die attach material 51 to make the wafer back surface 10b flat. Since it can be applied to 10b, dicing and die bonding can be performed using existing technology and equipment for a wafer that has not been thinned. In addition, since the die attach material 51 is filled in the concave portion, it is possible to prevent the inner peripheral region of the wafer 10 from being bent during dicing, so that dicing is possible.

  The die attach material 51 is a material used in a die bonding process, which is a process after filling the die attach material 51. Therefore, in the die bonding process, it is possible to perform die bonding using the die attach material 51 as it is. As described above, since the concave portion is planarized using a material used in a later step, it is possible to prevent an increase in the number of steps.

  The depth CD of the recess is equal to the distance H1 between the lower surface 24a of the upper grinding wheel 24 and the lower surface 25a of the lower grinding wheel 25. Then, by adjusting the distance H1, the depth CD of the recess can be adjusted.

  Moreover, since the inner peripheral area | region and outer peripheral area | region of the wafer back surface 10b can be ground simultaneously by using the grinding wheel 23 with which the upper grinding wheel 24 and the lower grinding wheel 25 were integrated, the grinding process which forms a recessed part It is possible to increase the efficiency of the.

  In addition, by providing the wafer processing apparatus 2 with a filling mechanism (nozzle 31), a flattening mechanism (squeegee 32), and a primary solidification function (heater 33), the wafer processing apparatus 2 can complete the processing after the processing is completed. 10 is in a state where the back surface is flat and the shape can be maintained. Therefore, since special handling is not required in the subsequent tape mounting process, dicing process, die bonding process, etc., the wafer 10 can be processed using existing technologies and equipment for unthinned wafers. It becomes.

  The present invention is not limited to the above-described embodiment, and it goes without saying that various improvements and modifications can be made without departing from the spirit of the present invention. In the present embodiment, the die attach material 51 is used as the filling material for filling the recess, but the present invention is not limited to this form. A liquid glue member that forms the glue layer 43 of the dicing tape 42 may be used as the filler. In this case, when the chip is picked up by die bonding (FIG. 11), the interface between the glue member and the chip is peeled off. Thus, for example, even when a die attach material such as a chip fixed to a substrate / lead frame with Ag paste is not used, the number of steps increases by using a paste member used in a subsequent dicing process as a filler. It is possible to flatten the recess while preventing this.

  In the present embodiment, the concave portion is filled with one type of die attach material 51. However, the present invention is not limited to this configuration, and a plurality of types of materials may be filled in layers. For example, the first die attach material having good adhesion to the chip and the second die attach material having good adhesion to the lead frame or the package may be filled in layers. The reason why the die attach material can be formed in multiple layers as described above is that the manufacturing method of the semiconductor device of this embodiment includes a step of filling the concave portion with the die attach material. Here, as an example of the first die attach material, a die attach material made of an epoxy resin having high adhesion to a flat surface can be cited. Moreover, as an example of the second die attach material, a die attach material made of a polyimide resin having high adhesion to a surface having unevenness can be cited. In the filling step, the step of filling the first die attach material into the lower layer of the concave portion of the wafer, the step of flattening and solidifying the first die attach material, and the concave portion of the second die attach material are substantially flat. The step of filling the upper layer of the recess so as to become and the step of solidifying the second die attach material are performed. Thereby, when the chip and the lead frame or the package are bonded to each other, an optimum die attach material can be used for each member, so that the adhesiveness can be further improved.

  Alternatively, the concave portion may be filled with a first die attach material having good adhesion to the chip and a glue member forming the glue layer 43 of the tape 42 in a layered manner. In this case, when the chip is picked up by die bonding (FIG. 11), the chip is picked up with the first die attach material attached by peeling off the interface between the glue member and the first die attach material. Will be. This makes it possible to flatten the recess while preventing the number of processes from increasing by using the paste member used in the subsequent dicing process and the die attach material used in the subsequent die bonding process as fillers. Become. In addition, when flattening the recess using only the die attach material, since the maximum thickness of the die attach material is determined, the maximum thickness of the outer peripheral reinforcing portion 1c is also limited. As a result, the wafer shape cannot be maintained. May be sufficient. However, by using a multilayer structure of the die attach material and the glue member, the thickness of the outer peripheral reinforcing portion 1c can be increased without being limited by the maximum thickness of the die attach material, so that the shape of the wafer can be maintained. It becomes possible to improve the nature.

  Further, in the present embodiment, the liquid die attach material 51 is used as the filling material filling the recesses, but the present invention is not limited to this form. As a filler, a die attach film in which a die attach material is applied to a film may be used. In this case, for example, a die attach film cut in accordance with the inner diameter size of the recess may be subjected to a process such as thermocompression bonding to the recess using a roller.

  The die attach material 51 is an example of a filler, the squeegee 32 is an example of a spatula member, the upper grinding wheel 24 is an example of a first wheel, and the lower grinding wheel 25 is an example of a second wheel.

Regarding the above embodiment, the following additional notes are disclosed.
(Appendix 1)
Selectively grinding the inner peripheral region of the back surface of the wafer, and forming a concave portion on the back surface of the wafer by forming an outer peripheral reinforcing portion thicker than the inner peripheral region in the outer peripheral region;
Filling the concave portion with a filler comprising a die bonding adhesive or a film adhesive; and
And a step of separating the wafer into a plurality of chips.
(Appendix 2)
The distance from the surface of the inner peripheral region to the surface of the outer peripheral reinforcing portion is:
2. The method of manufacturing a semiconductor device according to claim 1, wherein the filler has a thickness necessary for functioning as the die bonding adhesive or the film adhesive.
(Appendix 3)
The filler is liquid,
The step of filling the filler comprises
Filling the recess with the liquid filler;
Flattening the filled filler; and
The method of manufacturing a semiconductor device according to appendix 1 or appendix 2, comprising: solidifying the filled filler.
(Appendix 4)
The step of planarizing the filler comprises:
4. The method of manufacturing a semiconductor device according to appendix 3, wherein the filling material overflowing from a plane including the surface of the outer peripheral reinforcing portion is removed by a spatula member.
(Appendix 5)
The step of planarizing the filler comprises:
4. The method of manufacturing a semiconductor device according to appendix 3, wherein the method is performed by rotating the wafer in a circumferential direction.
(Appendix 6)
The filler includes a first die attach material and a second die attach material,
The step of filling the filler comprises
Filling the recess with the first die attach material having better adhesion to the wafer than the second die attach material;
Filling the recess with the second die attach material having better adhesion to the member to which the chip is die-bonded than the first die attach material after filling the first die attach material; ,
A method for manufacturing a semiconductor device according to appendix 3 to appendix 5, wherein:
(Appendix 7)
The filler includes a first die attach material and a glue member,
The step of filling the filler comprises
Filling the recess with the first die attach material having better adhesion to the wafer than the glue member;
After the filling of the first die attach material, the step of filling the concave portion with the adhesive member having better adhesion to the film used for the dicing than the first die attach material;
A method for manufacturing a semiconductor device according to appendix 3 to appendix 5, wherein:
(Appendix 8)
A grinding wheel for thinning a semiconductor wafer,
A disc-shaped first wheel attached to the tip of the spindle;
A disk-shaped second wheel having a diameter smaller than the diameter of the first wheel and attached integrally with the first wheel so as to share the rotation axis of the spindle,
A grinding wheel for a semiconductor wafer, wherein a distance between a surface perpendicular to the rotation axis of the first wheel and a surface perpendicular to the rotation axis of the second wheel is adjustable.
(Appendix 9)
A processing apparatus for thinning a wafer,
A table for holding the wafer;
A polishing wheel for polishing the wafer held on the table;
A supply unit for supplying a liquid filler to the wafer held on the table;
A solidification unit for solidifying the filler supplied to the wafer;
Have
The polishing wheel is
A disc-shaped first wheel attached to the tip of the spindle;
A disk-shaped second wheel having a diameter smaller than the diameter of the first wheel and attached integrally with the first wheel so as to share the rotation axis of the spindle,
An apparatus for processing a semiconductor wafer, wherein a distance between a surface perpendicular to the rotation axis of the first wheel and a surface perpendicular to the rotation axis of the second wheel is adjustable.
(Appendix 10)
The apparatus for processing a semiconductor wafer according to appendix 9, further comprising: a spatula member that sweeps the reference surface with the uppermost surface of the wafer in which the recess is formed by the grinding wheel as a reference surface.

Schematic diagram of wafer processing device 2 (Part 1) Schematic diagram of grinding wheel 23 The flowchart of the processing method of the semiconductor wafer in one Example of this invention Schematic diagram of wafer 10 Schematic diagram of wafer processing device 2 (Part 2) Schematic diagram of wafer processing device 2 (Part 3) Schematic diagram of wafer processing device 2 (Part 4) Schematic diagram of tape mount device Schematic diagram of dicing machine (1) Schematic diagram of dicing machine (2) Schematic diagram of die bonding equipment

Explanation of symbols

1c Peripheral reinforcement 10 Wafer 10a Wafer surface 10b Wafer back surface 22 Spindle 23 Grinding wheel 24 Upper grinding wheel 25 Lower grinding wheel 32 Squeegee 51 Die attach material H1 Distance CD Depth

Claims (7)

Selectively grinding the inner peripheral region of the back surface of the wafer, and forming a concave portion on the back surface of the wafer by forming an outer peripheral reinforcing portion thicker than the inner peripheral region in the outer peripheral region;
Filling the concave portion with a filler comprising a die bonding adhesive or a film adhesive; and
And a step of separating the wafer into a plurality of chips. The distance from the surface of the inner peripheral region to the surface of the outer peripheral reinforcing portion is:
2. The method of manufacturing a semiconductor device according to claim 1, wherein the filler has a thickness necessary for functioning as the die bonding adhesive or the film adhesive. The step of filling the filler comprises
Filling the recess with the liquid filler;
Flattening the filled filler; and
The method for manufacturing a semiconductor device according to claim 1, further comprising: solidifying the filled filler. The step of planarizing the filler comprises:
4. The method of manufacturing a semiconductor device according to claim 3, wherein the filling material overflowing from a plane including the surface of the outer peripheral reinforcing portion is removed by a spatula member. The filler includes a first die attach material and a second die attach material,
The step of filling the filler comprises
Filling the recess with the first die attach material having better adhesion to the wafer than the second die attach material;
Filling the recess with the second die attach material having better adhesion to the member to which the chip is die-bonded than the first die attach material after filling the first die attach material; ,
5. The method of manufacturing a semiconductor device according to claim 3, further comprising: A grinding wheel for thinning a semiconductor wafer,
A disc-shaped first wheel attached to the tip of the spindle;
A disk-shaped second wheel having a diameter smaller than the diameter of the first wheel and attached integrally with the first wheel so as to have a common rotation axis of the spindle,
A grinding wheel for a semiconductor wafer, wherein a distance between a surface perpendicular to the rotation axis of the first wheel and a surface perpendicular to the rotation axis of the second wheel is adjustable. A processing apparatus for thinning a wafer,
A table for holding the wafer;
A polishing wheel for polishing the wafer held on the table;
A supply unit for supplying a liquid filler to the wafer held on the table;
A solidification unit for solidifying the filler supplied to the wafer;
Have
The polishing wheel is
A disc-shaped first wheel attached to the tip of the spindle;
A disk-shaped second wheel having a diameter smaller than the diameter of the first wheel and attached integrally with the first wheel so as to have a common rotation axis of the spindle,
The apparatus for processing a semiconductor wafer, wherein a distance between a surface perpendicular to the rotation axis of the first wheel and a surface perpendicular to the rotation axis of the second wheel is adjustable.

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