CN102527574A - Device and method for spraying photoresist - Google Patents
Device and method for spraying photoresist Download PDFInfo
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- CN102527574A CN102527574A CN2010105780124A CN201010578012A CN102527574A CN 102527574 A CN102527574 A CN 102527574A CN 2010105780124 A CN2010105780124 A CN 2010105780124A CN 201010578012 A CN201010578012 A CN 201010578012A CN 102527574 A CN102527574 A CN 102527574A
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Abstract
The invention relates to a device and a method for spraying a photoresist. The invention provides a method for spraying photoresist, and the method comprises the following steps: (a) placing a wafer needed to be subjected to photoresist spraying on a wafer bearing platform; (b) moving an organic solvent nozzle to be above the center of the wafer, keeping the wafer still, spraying the vaporific organic solvent to cover the whole wafer, and then drying the wafer; (c) continuously spraying the vaporific organic solvent to cover the whole wafer, and forming a thin layer of organic solvent film on the surface of the wafer; (d) moving the photoresist nozzle with shorter length to the edge of the wafer, rotating the wafer for a circle, and coating the photoresist ejected from the photoresist nozzle on the very edge of the wafer; (e) rotating the wafer for a circle again, and simultaneously coating the photoresist ejected from the photoresist nozzle with longer length on the inner side of the wafer; (f) after the solvent in the photoresist is volatilized and solidified, moving the organic solvent nozzle to the edge of the wafer, and spraying a non-vaporific liquid solvent to clean the photoresist on the outside of the edge of the wafer. The method can be used for reducing the usage amount of the photoresist and ensuring the uniform film thickness of the wafer.
Description
Technical field
The present invention relates to the production process of semiconductor technical field, relate in particular to a kind of jet-coating photoresit devices and methods therefor that is used for the optical semiconductor carving technology.
Background technology
Photoetching process is one of technology of use in the semiconductor fabrication the most frequent, most critical; Every semiconductor element, photoelectric device etc.; All need photoetching process that the basic composition unit of required element and the mask pattern of circuit are transferred on the photoresist figure of substrate surface, for example on disk or the glass substrate.Usually the basic technology of photoetching comprises three big steps such as gluing, exposure and development.The purpose of coating technique be set up in disk surfaces thin and evenly and do not have a photoresist film of defective.
At present typical photoresist process is called RRC (Reduced Resist Consumption) coating or S-RRC (Super Reduced Resist Consumption) coating, and its spray equipment that adopts generally comprises a RRC nozzle, is used to spray organic solvent; A photoresist nozzle is used to spray photoresist; A trimming nozzle.This spray equipment in use generally comprises following steps: (1) moves to the disk center with the RRC nozzle, when the disk inactive state, sprays organic solvent; (2) the photoresist nozzle is moved to the disk center; (3) disk rotates, and surperficial organic solvent is thrown away from the center; (4) organic solvent to around scatter in, improve the disk rotating speed, at disk central-injection photoresist; (5) disk low speed rotation down forms specific thickness in disk surfaces, is called even glue; (6) use the trimming nozzle to carry out the disk back side and clean trimming.
Yet, in above-mentioned steps 1-3 process, if organic solvent fails fully to soak into disk surfaces; Possibly cause spraying in the glue coating process; Photoresist is poor in the flowability of disk surfaces, cause the thickness difference of each point on the disk, or photoresist can't be applied to the disk marginal portion.In addition, in step 4, photoresist is injected into disk through pump, and possibly have following problem in this spray glue process: have bubble in (1) pump line road, cause spraying the glue quantity not sufficient, photoresist can't cover the full wafer disk; (2) duty of pump and motor are asynchronous, and spray glue too early or late excessively causes that to spray glue bad; (3) motor high speed rotating is prone to produce defectives such as particle; (4),, cause the thick partially film thickness uniformity that influences of glue of central area even motor still can't be uniformly coated on photoresist on the disk with rotation at a high speed for the excessive photoresist of viscosity; (5) because spray high speed rotating during glue, for the higher disk of step or the very disk of deep trench is arranged, photoresist can't be to the step planarization, or in groove, inserts photoresist.
Also having a kind of coating method is the nozzle that adopts the strip slit-shaped, its length dimension near or slightly surpass the disk diameter, nozzle keeps disk static above disk, nozzle moves by side to opposite side from one, sprays glue simultaneously and is coated with.For strip slit-shaped nozzle, if length surpasses the disk diameter, a large amount of photoresists can be sprayed onto beyond the disk, and especially initial sum final position place causes waste; If nozzle length less than wafer radius, stops still having waste near the position in initial sum, and at mobile route maximum gauge place, the disk edge is owing to photoresist flows, and thickness can be thin partially.
In order to address the above problem, necessary a kind of improved jet-coating photoresit devices and methods therefor is provided.
Summary of the invention
To the deficiency of prior art, the purpose of this invention is to provide a kind of improved jet-coating photoresit devices and methods therefor, it can reduce the consumption of photoresist, and can guarantee the disk uniform film thickness, and step covers good.
The object of the invention is realized through following technical scheme is provided: a kind of jet-coating photoresit device; The short photoresist nozzle of the organic solvent nozzle and at least two photoresist nozzles that length is different that comprise parallel arranged, organic solvent nozzle and length lays respectively at the two ends of jet-coating photoresit device.
Further, the photoresist nozzle that photoresist nozzle that said length is short and length are long abuts against together and is separate, and each photoresist nozzle all is connected with the photoresist liquid feed device and the gas supply device that are provided with separately respectively.
Again further, the gas that provides of said gas supply device be can not with the inert gas of photoresist generation chemical reaction.
Again further, the lower end of the photoresist nozzle that said two length are different is continuous slit-shaped jet, or is made up of the capillary port that a row independently separates.
Again further, said length is gradually increase tendency from the laterally closer length near the organic solvent nozzle than short photoresist nozzle one side than the width of the slit-shaped jet of long photoresist nozzle or the diameter of capillary port.
Again further, said organic solvent nozzle is connecting organic solvent liquid feed device and mist generating device.
Correspondingly, the present invention also provides a kind of method of utilizing above-mentioned jet-coating photoresit device spraying photoresist, comprises step:
The disk that a. will spray photoresist is seated on the disk plummer;
B. the organic solvent nozzle is moved to top, disk center, keep disk static, spray vaporific organic solvent and cover the full wafer disk, dry disk then;
C. continue the vaporific organic solvent of ejection and cover the full wafer disk, and form the organic solvent film of skim in disk surfaces;
D. length is short photoresist nozzle moves on to the disk edge, rotates one week of disk, and the photoresist of this photoresist nozzle ejection is coated on the edge of disk;
E. rotate one week of disk once more, the photoresist nozzle ejection photoresist that length is long simultaneously is coated on the disk inboard;
F. after the solvent evaporates in photoresist is solidified, the organic solvent nozzle is moved on to the disk edge, spray the photoresist in the outside, non-vaporific fluid solvent clean disk edge.
Further; The photoresist nozzle that photoresist nozzle that said length is short and length are long is independent control; And all be connected with a photoresist liquid feed device and a gas supply device that is provided with separately respectively; Before spraying photoresist, by the photoresist liquid feed device photoresist to photoresist nozzle is provided earlier, provide air pressure that photoresist is sprayed from the photoresist nozzle by gas supply device then.
Again further, be the photoresist thickness that coating is thicker, can repeating step d, e, f.
Again further, the photoresist inclination certain angle ejection photoresist that length is long among the step e is near the disk center.
Compared with prior art; The invention has the beneficial effects as follows: thus this jet-coating photoresit devices and methods therefor can be coated on the disk waste that reduces photoresist effectively with photoresist, thereby and the thickness of photoresist relatively evenly can guarantee the disk uniform film thickness.
Description of drawings
Below in conjunction with accompanying drawing the present invention is described further:
Fig. 1 is a jet-coating photoresit schematic representation of apparatus of the present invention.
Fig. 2 is the sketch map of jet-coating photoresit device of the present invention when doing organic solvent and soaking into.
Sketch map when Fig. 3 is jet-coating photoresit device of the present invention spray glue.
Fig. 4 is that jet-coating photoresit device of the present invention is done the sectional view that trimming cleans state at the disk edge.
Fig. 5 is the sectional view of jet-coating photoresit device of the present invention when doing organic solvent infiltration and spray glue, and it has shown the position of jet-coating photoresit device this moment.
Sectional view when Fig. 6 does the removal photoresist for jet-coating photoresit device of the present invention at the disk edge, it has shown the position of jet-coating photoresit device this moment.
The specific embodiment
Jet-coating photoresit device of the present invention plays the key effect that jet-coating photoresit is formed uniform photoresist film in disk surfaces so that in disk surfaces in photo-etching technological process.Followingly with preferred implementation implementation procedure of the present invention and essential content place is described with reference to accompanying drawing.
Join shown in Figure 1ly, the jet-coating photoresit device 100 of the preferred embodiment for the present invention is elongated, the first photoresist nozzle 2 and the second photoresist nozzle 3 together that abut against that it comprises the organic solvent nozzle 1 of parallel arranged and is positioned at organic solvent nozzle 1 one sides.The length of the first photoresist nozzle 2 is long than the length of the second photoresist nozzle 3, and between the organic solvent nozzle 1 and the second photoresist nozzle 3.That is to say that the second short photoresist nozzle 3 of organic solvent nozzle 1 and length lays respectively at the two ends of jet-coating photoresit device 100.They are separate though the first photoresist nozzle 2 and the second photoresist nozzle 3 abut against together, and each photoresist nozzle 2,3 all is connected with a photoresist liquid feed device that is provided with separately 5 and gas supply device 6 respectively.The photoresist liquid feed device 5 that is to say each photoresist nozzle 2,3 all is independent control with gas supply device 6.Because the first photoresist nozzle 2 and the second photoresist nozzle 3 all have the liquid storage function; Therefore before spraying photoresist; Earlier photoresist to photoresist nozzle is provided, provides air pressure that photoresist is sprayed from the first and second photoresist nozzles 2,3 by gas supply device 6 then by photoresist liquid feed device 5.Wherein, after photoresist nozzle 2,3 provided photoresist, because the effect of surface tension etc., photoresist can not flow out from the jet of photoresist nozzle 2,3 naturally at photoresist liquid feed device 5, must rely on gas pressure could flow out or spray photoresist.Also have, the gas that gas supply device 6 provides can not with photoresist generation chemical reaction, generally be inert gases such as nitrogen.It should be noted that organic solvent nozzle 1 is connecting organic solvent liquid feed device and mist generating device 4, so organic solvent nozzle 1 both can spray atomized organic solvent as required and also can spray non-vaporific fluid solvent as required.
The lower end of the first photoresist nozzle 2 and the second photoresist nozzle 3 is continuous slit-shaped jets, or is made up of the capillary port that a row independently separates.The width of the slit-shaped jet of the first photoresist nozzle 2 or the diameter of capillary port are not constant, and it is increase tendency gradually from the side near laterally closer second a photoresist nozzle 3 of organic solvent nozzle 1.
Correspondingly, please join Fig. 2 to shown in Figure 6, the present invention also provides a kind of method of utilizing above-mentioned jet-coating photoresit device 100 spraying photoresists, comprises step:
The disk 200 that a. will spray photoresist is seated on the disk plummer; Preferred implementation is an example with 8 inches disks;
B. like Fig. 2 and shown in Figure 5, organic solvent nozzle 1 is moved to top, disk 200 centers, keep disk 200 static, spray vaporific organic solvent and cover full wafer disk 200, dry disk 200 then; At this moment; The ejection end of organic solvent nozzle 1 is outward-dipping certain angle; But the vaporific organic solvent of ejection still can cover disk 200; In addition, the disk plummer is connected with motor (not shown) and can drives disk 200 according to demand and rotates, and in this process, can wash the particle that possibly exist on disk 200 surfaces;
C. continue the vaporific organic solvent of ejection and cover full wafer disk 200, and form the organic solvent film of skim on disk 200 surfaces; At this moment, disk 200 is in preimpregnation profit state, is convenient to the photoresist coating;
D. like Fig. 3 and shown in Figure 5, the second photoresist nozzle 3 is moved on to disk 200 edges, rotate 200 1 weeks of disk, let the photoresist of the second photoresist nozzle, 3 ejections be coated on the edge of disk 200 with the speed of changeing less than per minute 30;
E. rotate 200 1 weeks of disk with the speed of changeing again, let the first photoresist nozzle, 2 ejection photoresists be coated on disk 200 inboards less than per minute 30; Wherein the first photoresist nozzle 2 does not spray photoresist in the central vertical of disk 200; But with the capillary port of the first photoresist nozzle, 2 leftmost sides; Or slit-shaped jet leftmost side inclination certain angle, the photoresist tilted direction is sprayed onto near disk 200 centers, flow to disk 200 centers again; Can avoid the photoresist thickness of disk 200 central areas excessive like this, and the photoresists that help disk 200 surface evenly distribute;
F. Fig. 4 and shown in Figure 6 after the solvent evaporates curing in photoresist, moves on to disk 200 edges with organic solvent nozzle 1, sprays the photoresist in the outside, non-vaporific fluid solvent clean disk 200 edges; Organic solvent nozzle 1 of the present invention has increased cleaning function newly, and has replaced trimming nozzle of the prior art, so can simplify the jet-coating photoresit device, helps reducing production costs.
Above method can be injected in photoresist exactly on disk 200 surfaces and form uniform photoresist film, and has reduced the waste of expensive photoresist effectively, helps the reduction of production cost.
The first photoresist nozzle 2 and the second photoresist nozzle 3 are connected with the photoresist liquid feed device 5 and gas supply device 6 of independent setting respectively; Before spraying photoresist; Earlier provide photoresist to nozzle, provide air pressure that photoresist is sprayed from the photoresist nozzle by gas supply device 6 then by photoresist liquid feed device 5.Like this, the injection of photoresist was divided into for two steps goes to accomplish, thereby has avoided influence of air bubbles in the routine operation.
In addition, because different demands possibly require to be coated with the photoresist of different-thickness, also have, the surface of disk has higher step or very dark groove, repeating step d neatly in this case, e, f.
In addition, do not have the smooth disk of figure, carry out the preimpregnation profit with organic solvent nozzle 1 earlier, afterwards the second photoresist nozzle 3 is moved on to the disk center, adopt conventional rotary coating mode to spray glue, spare glue for the surface.Behind the glued bundle of spray, organic solvent nozzle 1 is moved on to the vaporific organic solvent of top, disk center ejection, the evaporation rate of solvent in the photoresist that slows down, it is mobile to improve photoresist, thus coating obtains thinner photoresist thickness.
Although be the example purpose; Preferred implementation of the present invention is disclosed; But those of ordinary skill in the art will recognize, under the situation that does not break away from disclosed scope of the present invention and spirit by appending claims, various improvement, increase and replacement are possible.
Claims (10)
1. jet-coating photoresit device comprises the organic solvent nozzle and at least two photoresist nozzles that length is different of parallel arranged, and it is characterized in that: the short photoresist nozzle of organic solvent nozzle and length lays respectively at the two ends of jet-coating photoresit device.
2. jet-coating photoresit device as claimed in claim 1; It is characterized in that: the photoresist nozzle that photoresist nozzle that said length is short and length are long abuts against together and is separate, and each photoresist nozzle all is connected with the photoresist liquid feed device and the gas supply device that are provided with separately respectively.
3. jet-coating photoresit device as claimed in claim 2 is characterized in that: the gas that said gas supply device provides be can not with the inert gas of photoresist generation chemical reaction.
4. jet-coating photoresit device as claimed in claim 3 is characterized in that: the lower end of the photoresist nozzle that said two length are different is continuous slit-shaped jet, or is made up of the capillary port that a row independently separates.
5. jet-coating photoresit device as claimed in claim 4 is characterized in that: said length is gradually increase tendency from the laterally closer length near the organic solvent nozzle than short photoresist nozzle one side than the width of the slit-shaped jet of long photoresist nozzle or the diameter of capillary port.
6. like each described jet-coating photoresit device in the claim 1 to 5, it is characterized in that: said organic solvent nozzle is connecting organic solvent liquid feed device and mist generating device.
7. method of utilizing the said jet-coating photoresit device of claim 1 spraying photoresist comprises step:
The disk that a. will spray photoresist is seated on the disk plummer;
B. the organic solvent nozzle is moved to top, disk center, keep disk static, spray vaporific organic solvent and cover the full wafer disk, dry disk then;
C. continue the vaporific organic solvent of ejection and cover the full wafer disk, and form the organic solvent film of skim in disk surfaces;
D. length is short photoresist nozzle moves on to the disk edge, rotates one week of disk, and the photoresist of this photoresist nozzle ejection is coated on the edge of disk;
E. rotate one week of disk once more, the photoresist nozzle ejection photoresist that length is long simultaneously is coated on the disk inboard;
F. after the solvent evaporates in photoresist is solidified, the organic solvent nozzle is moved on to the disk edge, spray the photoresist in the outside, non-vaporific fluid solvent clean disk edge.
8. the method for spraying photoresist as claimed in claim 7; It is characterized in that: the photoresist nozzle that photoresist nozzle that said length is short and length are long is independent control; And all be connected with a photoresist liquid feed device and a gas supply device that is provided with separately respectively; Before spraying photoresist, by the photoresist liquid feed device photoresist to photoresist nozzle is provided earlier, provide air pressure that photoresist is sprayed from the photoresist nozzle by gas supply device then.
9. the method for spraying photoresist as claimed in claim 8 is characterized in that: be the photoresist thickness that coating is thicker, can repeating step d, and e, f.
10. like the method for each described spraying photoresist in the claim 7 to 9, it is characterized in that: the photoresist inclination certain angle ejection photoresist that length is long among the step e is near the disk center.
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CN2010105780124A CN102527574A (en) | 2010-12-08 | 2010-12-08 | Device and method for spraying photoresist |
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CN2010105780124A CN102527574A (en) | 2010-12-08 | 2010-12-08 | Device and method for spraying photoresist |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104267579A (en) * | 2014-09-17 | 2015-01-07 | 中国科学院上海光学精密机械研究所 | Meter-scale raster glass photoresist precision coating method |
CN104517864A (en) * | 2013-10-08 | 2015-04-15 | 精材科技股份有限公司 | Method of fabricating wafer-level chip package |
CN105097499A (en) * | 2014-05-09 | 2015-11-25 | 盛美半导体设备(上海)有限公司 | Gluing method and gluing apparatus |
CN105312184A (en) * | 2015-12-07 | 2016-02-10 | 中国科学院宁波材料技术与工程研究所 | Automatic production system for carrying out polishing and spraying on work-pieces and production method |
CN111739823A (en) * | 2020-06-29 | 2020-10-02 | 中国科学院微电子研究所 | Photoresist coating nozzle and photoresist coating equipment with same |
CN114054287A (en) * | 2020-07-30 | 2022-02-18 | 中国科学院微电子研究所 | Photoresist suck-back device, photoresist coating equipment and photoresist coating method |
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WO2007035071A1 (en) * | 2005-09-26 | 2007-03-29 | Semes Co., Ltd. | Apparatus and method for treating substrate |
CN1963671A (en) * | 2006-11-17 | 2007-05-16 | 京东方科技集团股份有限公司 | Coating apparatus and method of photosensitive resist |
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2010
- 2010-12-08 CN CN2010105780124A patent/CN102527574A/en active Pending
Patent Citations (4)
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US6059880A (en) * | 1996-12-25 | 2000-05-09 | Tokyo Electron Limited | Coating apparatus |
US20040115567A1 (en) * | 2002-12-16 | 2004-06-17 | Mandal Robert P. | Wafer track apparatus and methods for dispensing fluids with rotatable dispense arms |
WO2007035071A1 (en) * | 2005-09-26 | 2007-03-29 | Semes Co., Ltd. | Apparatus and method for treating substrate |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104517864A (en) * | 2013-10-08 | 2015-04-15 | 精材科技股份有限公司 | Method of fabricating wafer-level chip package |
CN105097499A (en) * | 2014-05-09 | 2015-11-25 | 盛美半导体设备(上海)有限公司 | Gluing method and gluing apparatus |
CN105097499B (en) * | 2014-05-09 | 2019-05-17 | 盛美半导体设备(上海)有限公司 | Glue spreading method and glue stations |
CN104267579A (en) * | 2014-09-17 | 2015-01-07 | 中国科学院上海光学精密机械研究所 | Meter-scale raster glass photoresist precision coating method |
CN105312184A (en) * | 2015-12-07 | 2016-02-10 | 中国科学院宁波材料技术与工程研究所 | Automatic production system for carrying out polishing and spraying on work-pieces and production method |
CN111739823A (en) * | 2020-06-29 | 2020-10-02 | 中国科学院微电子研究所 | Photoresist coating nozzle and photoresist coating equipment with same |
CN114054287A (en) * | 2020-07-30 | 2022-02-18 | 中国科学院微电子研究所 | Photoresist suck-back device, photoresist coating equipment and photoresist coating method |
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Application publication date: 20120704 |