CN115985575A - Composite conductor packaging method and system - Google Patents

Composite conductor packaging method and system Download PDF

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Publication number
CN115985575A
CN115985575A CN202310255546.0A CN202310255546A CN115985575A CN 115985575 A CN115985575 A CN 115985575A CN 202310255546 A CN202310255546 A CN 202310255546A CN 115985575 A CN115985575 A CN 115985575A
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insulating layer
preset
thickness
conductor
setting
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CN115985575B (en
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戴少涛
伍锐
曾智斌
马韬
胡磊
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Jiangxi Lianchuang Optoelectronic Science & Technology Co ltd
Jiangxi Lianchuang Photoelectric Superconductor Application Co ltd
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Jiangxi Lianchuang Optoelectronic Science & Technology Co ltd
Jiangxi Lianchuang Photoelectric Superconductor Application Co ltd
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Abstract

The invention discloses a composite conductor packaging method and a composite conductor packaging system, wherein the composite conductor packaging method comprises the following steps: obtaining critical current of a conductor material, determining a current ratio of rated current of a composite conductor to the critical current, and determining the layer number of the conductor material based on the current ratio; stacking the conductor materials according to the number of the conductor material layers to form a stacked structure; setting a target critical current of the composite conductor, determining a twisting pitch of the stacked structure according to the target critical current, and putting the twisted conductor material into a metal framework; acquiring power frequency voltage and impulse voltage, determining the thickness of an insulating layer according to the power frequency voltage and the impulse voltage, and arranging the insulating layer on the outer side of the metal framework according to the thickness of the insulating layer; and installing a protective layer on the insulating layer to obtain the packaged composite conductor. The invention realizes the batch preparation of the composite conductor by packaging the conductor material, and simultaneously the composite conductor has high current density and high mechanical strength.

Description

Composite conductor packaging method and system
Technical Field
The invention relates to the technical field of conductor packaging, in particular to a composite conductor packaging method and a composite conductor packaging system.
Background
The superconducting material has zero resistance characteristic, physical characteristics such as complete diamagnetism and flux quantization which are not possessed by conventional materials, and has irreplaceable effects in the frontier fields such as electric power, medical treatment, transportation and the like. In recent years, with the continuous progress of the preparation technology of high-temperature superconducting materials, the critical current of a single superconducting strip can reach 200-300A under the self-field condition at present, and a foundation is laid for the development of the application of the superconducting technology.
However, as the demand for large current-carrying power devices increases, the current-carrying capacity of a single superconducting tape cannot meet the requirements of practical applications. In addition, the general composite conductor needs laser cutting, has high quality requirement on the conductor, is difficult to manufacture or is relatively simple in manufacture process, but can only be wound on a cylinder with a larger radius due to larger current-carrying stacking thickness. Therefore, a method for encapsulating a composite conductor is needed to simplify the encapsulation process, improve the current density and mechanical strength of the composite conductor, and ensure the quality of the composite conductor.
Disclosure of Invention
The invention aims to provide a composite conductor packaging method and a composite conductor packaging system, which solve the problems of complex composite conductor packaging process and high difficulty, so as to realize simple and reliable composite conductor packaging process and ensure that the composite conductor has high current density and high mechanical strength.
The invention provides a composite conductor packaging method, which comprises the following steps:
obtaining critical current of a conductor material, determining a current ratio of rated current of a composite conductor to the critical current, and determining the layer number of the conductor material based on the current ratio;
stacking the conductor materials according to the number of the conductor material layers to form a stacked structure;
setting a target critical current of the composite conductor, determining a twisting pitch of the stacked structure according to the target critical current, and putting the twisted conductor material into a metal framework;
acquiring power frequency voltage and impulse voltage, determining the thickness of an insulating layer according to the power frequency voltage and the impulse voltage, and arranging the insulating layer on the outer side of the metal framework according to the thickness of the insulating layer;
and installing a protective layer on the insulating layer to obtain the packaged composite conductor.
In some embodiments of the application, the packaging method of the composite conductor is improved, and the conductor material is packaged by a soldering method;
and soldering tin is filled among the conductor materials, between the conductor materials and the metal framework and between the metal framework and the insulating layer, and the soldering tin is melted by pressure and then fully filled in the gaps in the composite conductor.
In some embodiments of the present application, a preset current ratio matrix E0 and a conductor material layer number matrix N0, for the preset current ratio matrix E0, E0 (E1, E2, E3, E4) is set, where E1 is a first preset current ratio, E2 is a second preset current ratio, E3 is a third preset current ratio, E4 is a fourth preset current ratio, and E1 < E2 < E3 < E4;
setting N0 (N1, N2, N3, N4) for the conductor material layer number matrix N0, wherein N1 is a first preset conductor material layer number, N2 is a second preset conductor material layer number, N3 is a third preset conductor material layer number, N4 is a fourth preset conductor material layer number, and N1 is more than N2 and more than N3 and more than N4;
acquiring a current ratio e, and setting the layer number of the conductor material according to the relation between the current ratio e and each preset current ratio;
when E is less than E1, setting the first preset number of layers N1 of the conductor material as the number of layers of the conductor material;
when E1 is more than or equal to E and less than E2, setting the second preset conductor material layer number N2 as the conductor material layer number;
when E2 is more than or equal to E and less than E3, setting the third preset conductor material layer number N3 as the conductor material layer number;
and when the E3 is more than or equal to E and less than the E4, setting the fourth preset conductor material layer number N4 as the conductor material layer number.
In some embodiments of the present application, a preset target critical current matrix C0 and a twist pitch matrix P0, for which preset target critical current matrix C0, C0 (C1, C2, C3, C4) is set, where C1 is a first preset target critical current and C2 is a second preset target critical current; c3 is a third predetermined target critical current; c4 is a fourth preset target critical current, and C1 is more than C2 and more than C3 and more than C4;
setting P0 (P1, P2, P3, P4) for the twisting pitch matrix P0, wherein P1 is a first twisting pitch, P2 is a second twisting pitch, P3 is a third twisting pitch, P4 is a fourth twisting pitch, and P1 < P2 < P3 < P4;
acquiring a target critical current c of the composite conductor, and setting a torsion pitch of the stacked structure according to the relation between the target critical current c and each preset target critical current;
when C < C1, setting the first twisting pitch P1 as the twisting pitch of the stacked structure;
when C is more than or equal to C1 and less than C2, setting the second twisting pitch P2 as the twisting pitch of the stacking structure;
when C2 is larger than or equal to C and smaller than C3, setting the third twisting pitch P3 as the twisting pitch of the stacking structure;
when C3 is not less than C < C4, the fourth twist pitch P4 is set as the twist pitch of the stacked structure.
In some embodiments of the present application, a preset power frequency voltage matrix A0 and an insulation layer thickness i matrix T0 determined according to the power frequency voltage are set, for the preset power frequency voltage matrix A0, A0 (A1, A2, A3, A4) is set, where A1 is a first power frequency voltage, A2 is a second power frequency voltage, A3 is a third power frequency voltage, A4 is a fourth power frequency voltage, and A1 < A2 < A3 < A4;
setting T0 (T1, T2, T3 and T4) for the insulating layer thickness I matrix T0, wherein T1 is a first preset insulating layer thickness I, T2 is a second preset insulating layer thickness I, T3 is a third preset insulating layer thickness I, T4 is a fourth preset insulating layer thickness I, and T1 is more than T2 and less than T3 and less than T4;
acquiring power frequency voltage a, and setting the thickness of the insulating layer according to the relation between the power frequency voltage a and each preset power frequency voltage;
when a is smaller than A1, setting the thickness IT 1 of the first preset insulating layer as the thickness of the insulating layer;
when a is more than or equal to A1 and less than A2, setting the thickness IT 2 of the second preset insulating layer as the thickness of the insulating layer;
when a is more than or equal to A2 and less than A3, setting the thickness IT 3 of the third preset insulating layer as the thickness of the insulating layer;
and when A3 is more than or equal to a and less than A4, setting the thickness of the fourth preset insulating layer IT 4 as the thickness of the insulating layer.
In some embodiments of the present application, a preset surge voltage matrix V0 and an insulating layer thickness ii matrix H0 determined according to the surge voltage are set to V0 (V1, V2, V3, V4) for the preset surge voltage matrix V0, where V1 is a first surge voltage, V2 is a second surge voltage, V3 is a third surge voltage, V4 is a fourth surge voltage, and V1 < V2 < V3 < V4;
setting H0 (H1, H2, H3, H4) for the insulating layer thickness II matrix H0, wherein H1 is a first preset insulating layer thickness II, H2 is a second preset insulating layer thickness II, H3 is a third preset insulating layer thickness II, H4 is a fourth preset insulating layer thickness II, and H1 is more than H2 and is more than H3 and is more than H4;
acquiring impulse voltage v, and setting the thickness of the insulating layer according to the relation between the impulse voltage v and each preset impulse voltage;
when V is less than V1, setting the thickness IIH 1 of the first preset insulating layer as the thickness of the insulating layer;
when V1 is not more than V and is less than V2, setting the thickness IIH 2 of the second preset insulating layer as the thickness of the insulating layer;
when V is more than or equal to V2 and less than V3, setting the thickness IIH 3 of the third preset insulating layer as the thickness of the insulating layer;
and when V3 is more than or equal to V and less than V4, setting the thickness IIH 4 of the fourth preset insulating layer as the thickness of the insulating layer.
In some embodiments of the present application, the method of determining the thickness of the insulating layer is improved, the thickness of the insulating layer being the maximum of the thicknesses of the insulating layer determined from the power frequency voltage and the surge voltage.
In some embodiments of the present application, the insulating layer thickness determining method:
the thickness I of the insulating layer determined according to the power frequency voltage is Ti, wherein i =1,2,3,4;
an insulating layer thickness ii determined from the surge voltage is Hi, where i =1,2,3,4;
when Ti is larger than Hi, selecting the thickness Ti of the insulating layer determined by the power frequency voltage as the thickness of the insulating layer;
and when Ti is less than Hi, selecting the insulating layer thickness Hi determined by the impulse voltage as the insulating layer thickness.
In some embodiments of the present application, the material of the insulating layer is improved, and the material of the insulating layer is polypropylene laminated paper, low density polyethylene or polyimide film.
A composite conductor encapsulation system, comprising:
the packaging unit is used for packaging the composite conductor;
the acquisition unit is used for acquiring data information in the composite conductor packaging process;
a determination unit for determining composite conductor package parameters from the data information;
the control unit is connected with the acquisition unit, the determination unit and the packaging unit and is used for controlling the packaging unit according to the composite conductor packaging parameters;
the acquisition unit is used for acquiring critical current of a conductor material, target critical current of a composite conductor, power frequency voltage and impulse voltage; the determining unit calculates to obtain a current ratio of rated current and critical current of the composite conductor, determines the number of layers of conductor materials based on the current ratio, determines the torsion pitch of the stacked structure according to the target critical current, and determines the thickness of the insulating layer according to the power frequency voltage and the impulse voltage; the packaging unit stacks conductor materials according to the number of the conductor material layers to form a stacked structure, twists the stacked structure according to the twisting pitch, puts the twisted conductor materials into a metal framework, and arranges an insulating layer on the outer side of the metal framework; and installing a protective layer on the insulating layer to obtain the packaged composite conductor.
The application discloses a composite conductor packaging method and a system, comprising the following steps: obtaining critical current of a conductor material, determining a current ratio of rated current of a composite conductor to the critical current, and determining the layer number of the conductor material based on the current ratio; stacking the conductor materials according to the number of the conductor material layers to form a stacked structure; setting a target critical current of the composite conductor, determining a twisting pitch of the stacked structure according to the target critical current, and putting the twisted conductor material into a metal framework; acquiring power frequency voltage and impulse voltage, determining the thickness of an insulating layer according to the power frequency voltage and the impulse voltage, and arranging the insulating layer on the outer side of the metal framework according to the thickness of the insulating layer; and installing a protective layer on the insulating layer to obtain the packaged composite conductor.
The conductor material is packaged after the number of layers of the conductor material, the twisting pitch and the thickness of the insulating layer are determined, so that the packaging process is simplified, the implementation is easy, and the method is suitable for large-scale batch preparation; meanwhile, the mechanical strength of the composite conductor is improved by packaging through a soldering tin method; the composite conductor structure is composed of a conductor material, a metal framework, an insulating layer and a protective layer from inside to outside, so that the thermal stability of the conductor is enhanced, and the self performance of the conductor is maintained.
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Drawings
FIG. 1 is a schematic flow chart of a method for encapsulating a composite conductor according to the present invention;
fig. 2 is a block diagram of a composite conductor encapsulation system of the present invention.
Detailed Description
The technical scheme of the invention is further explained by the attached drawings and the embodiment.
It is to be understood that the following detailed description is exemplary and is intended to provide further explanation of the invention as claimed. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular is intended to include the plural unless the context clearly dictates otherwise, and further it is to be understood that when the terms "comprises" and/or "comprising" are used in this specification, it indicates the presence of the features, steps, operations, devices, components and/or combinations thereof, and not to exclude other elements or items. The use of "first," "second," and similar terms in the present application do not denote any order, quantity, or importance, but rather the terms are used to distinguish one element from another. Terms such as "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "side", "bottom", etc. indicate orientations or positional relationships based on the drawings, and are only terms of relationships determined for convenience in describing structural relationships of the parts or elements of the present invention, and do not particularly indicate any parts or elements of the present invention, and should not be construed as limiting the present invention. Terms such as "fixedly connected", "connected", and the like are to be understood broadly and mean either a fixed connection or an integrally or detachably connected connection; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be determined according to specific situations by persons skilled in the relevant scientific or technical field, and are not to be construed as limiting the present invention.
Examples
The invention provides a composite conductor packaging method and a composite conductor packaging system, which solve the problems of complex composite conductor packaging process and high difficulty, and realize simple and reliable composite conductor packaging process, so that the composite conductor has high current density and high mechanical strength.
Fig. 1 is a flowchart of a composite conductor packaging method according to the present invention, as shown in fig. 1, including:
s1, obtaining critical current of a conductor material, determining a current ratio of rated current of a composite conductor to the critical current, and determining the number of layers of the conductor material based on the current ratio.
And S2, stacking the conductor materials according to the number of the layers of the conductor materials to form a stacked structure.
S3, setting a target critical current of the composite conductor, determining the twisting pitch of the stacked structure according to the target critical current, and putting the twisted conductor material into the metal framework.
And S4, acquiring power frequency voltage and impulse voltage, determining the thickness of the insulating layer according to the power frequency voltage and the impulse voltage, and arranging the insulating layer on the outer side of the metal framework according to the thickness of the insulating layer.
And S5, mounting a protective layer on the insulating layer to obtain the packaged composite conductor.
In some embodiments of the present application, the method of encapsulating the composite conductor is improved, and the conductor material is encapsulated by a soldering method.
And soldering tin is filled among the conductor materials, between the conductor materials and the metal framework and between the metal framework and the insulating layer, and the gaps in the composite conductor are fully filled after the soldering tin is melted by pressure.
In this embodiment, the packaging is performed by a soldering method, and tin foils are filled between the conductor materials, between the conductor materials and the metal framework, and between the metal framework and the insulating layer, and the temperature is controlled within 200 ℃, so that the tin foils are melted and completely fill the gaps in the composite conductor.
In some embodiments of the present application, a specific method for determining the number of layers of the conductive material is disclosed, where a preset current ratio matrix E0 and a conductive material layer number matrix N0 are set, and for the preset current ratio matrix E0, E0 (E1, E2, E3, E4) is set, where E1 is a first preset current ratio, E2 is a second preset current ratio, E3 is a third preset current ratio, E4 is a fourth preset current ratio, and E1 < E2 < E3 < E4.
And setting N0 (N1, N2, N3 and N4) for the conductor material layer number matrix N0, wherein N1 is a first preset conductor material layer number, N2 is a second preset conductor material layer number, N3 is a third preset conductor material layer number, N4 is a fourth preset conductor material layer number, and N1 is more than N2 and more than N3 and more than N4.
And acquiring a current ratio e, and setting the layer number of the conductor material according to the relation between the current ratio e and each preset current ratio.
And when E is less than E1, setting the first preset conductor material layer number N1 as the conductor material layer number.
And when the E1 is more than or equal to E and less than the E2, setting the second preset conductor material layer number N2 as the conductor material layer number.
And when the E2 is more than or equal to E and less than the E3, setting the third preset conductor material layer number N3 as the conductor material layer number.
And when the E3 is more than or equal to E and less than the E4, setting the fourth preset conductor material layer number N4 as the conductor material layer number.
In this embodiment, the conductor material includes multiple layers, and since the cross section of the high-temperature superconducting material is relatively small, the maximum current-carrying capacity is considered in designing, and the number of layers of the conductor material is determined by determining the current ratio of the rated current of the composite conductor to the critical current and determining the number of layers of the conductor material based on the current ratio.
In some embodiments of the present application, a specific method for determining a twist pitch of the stacked structure is disclosed, a preset target critical current matrix C0 and a twist pitch matrix P0, and for the preset target critical current matrix C0, C0 (C1, C2, C3, C4) is set, where C1 is a first preset target critical current and C2 is a second preset target critical current; c3 is a third preset target critical current; c4 is a fourth preset target critical current, and C1 is more than C2 and more than C3 and more than C4.
For the twisting pitch matrix P0, P0 (P1, P2, P3, P4) is set, where P1 is a first twisting pitch, P2 is a second twisting pitch, P3 is a third twisting pitch, P4 is a fourth twisting pitch, and P1 < P2 < P3 < P4.
And acquiring a target critical current c of the composite conductor, and setting the twisting pitch of the stacked structure according to the relation between the target critical current c and each preset target critical current.
When C < C1, the first twist pitch P1 is set as a twist pitch of the stacked structure.
And when the C1 is not less than C and is less than C2, setting the second twisting pitch P2 as the twisting pitch of the stacking structure.
And when C2 is larger than or equal to C and smaller than C3, setting the third twisting pitch P3 as the twisting pitch of the stacked structure.
When C3 is not less than C < C4, the fourth twist pitch P4 is set as the twist pitch of the stacked structure.
In some embodiments of the present application, a twist pitch of the stacked structure is greater than a critical twist pitch of the conductor material.
In the embodiment, the conductor materials are twisted according to a certain twisting pitch, conductor space transposition is realized through twisting, so that the influence of an electromagnetic field on the current carrying capacity of each conductor material is balanced, the current-sharing distribution of a plurality of conductor materials is realized, the self alternating current loss is effectively reduced, the critical current is improved, and the characteristic of high transmission current density is achieved.
In some embodiments of the present application, a specific method for determining the thickness of an insulating layer under a power frequency voltage is disclosed, wherein a power frequency voltage matrix A0 is preset and an insulating layer thickness i matrix T0 is determined according to the power frequency voltage, for the preset power frequency voltage matrix A0, A0 (A1, A2, A3, A4) is set, where A1 is a first power frequency voltage, A2 is a second power frequency voltage, A3 is a third power frequency voltage, A4 is a fourth power frequency voltage, and A1 < A2 < A3 < A4.
For the insulating layer thickness I matrix T0, T0 (T1, T2, T3, T4) is set, wherein T1 is a first preset insulating layer thickness I, T2 is a second preset insulating layer thickness I, T3 is a third preset insulating layer thickness I, T4 is a fourth preset insulating layer thickness I, and T1 is more than T2 and less than T3 and less than T4.
And acquiring power frequency voltage a, and setting the thickness of the insulating layer according to the relation between the power frequency voltage a and each preset power frequency voltage.
And when a is smaller than A1, setting the first preset insulating layer thickness IT 1 as the insulating layer thickness.
And when a is more than or equal to A1 and less than A2, setting the thickness IT 2 of the second preset insulating layer as the thickness of the insulating layer.
And when a is more than or equal to A2 and less than A3, setting the thickness IT 3 of the third preset insulating layer as the thickness of the insulating layer.
And when a is more than or equal to A3 and less than A4, setting the thickness of the fourth preset insulating layer IT 4 as the thickness of the insulating layer.
In some embodiments of the present application, a specific method for determining the thickness of the insulating layer under the surge voltage is disclosed, a preset surge voltage matrix V0 and an insulating layer thickness ii matrix H0 determined according to the surge voltage are provided, and V0 (V1, V2, V3, V4) is set for the preset surge voltage matrix V0, where V1 is a first surge voltage, V2 is a second surge voltage, V3 is a third surge voltage, V4 is a fourth surge voltage, and V1 < V2 < V3 < V4.
And setting H0 (H1, H2, H3 and H4) for the insulating layer thickness II matrix H0, wherein H1 is a first preset insulating layer thickness II, H2 is a second preset insulating layer thickness II, H3 is a third preset insulating layer thickness II, H4 is a fourth preset insulating layer thickness II, and H1 is more than H2 and is more than H3 and is more than H4.
And acquiring impulse voltage v, and setting the thickness of the insulating layer according to the relation between the impulse voltage v and each preset impulse voltage.
And when V is less than V1, setting the first preset insulating layer thickness IIH 1 as the insulating layer thickness.
And when V1 is not more than V and is less than V2, setting the thickness IIH 2 of the second preset insulating layer as the thickness of the insulating layer.
And when V2 is more than or equal to V and less than V3, setting the thickness IIH 3 of the third preset insulating layer as the thickness of the insulating layer.
And when V is more than or equal to V3 and less than V4, setting the thickness IIH 4 of the fourth preset insulating layer as the thickness of the insulating layer.
In some embodiments of the present application, the method of determining the thickness of the insulating layer is improved, the thickness of the insulating layer being the maximum of the thicknesses of the insulating layer determined from the power frequency voltage and the surge voltage.
In some embodiments of the present application, the insulating layer thickness determining method:
and the thickness I of the insulating layer determined according to the power frequency voltage is Ti, wherein i =1,2,3,4.
The insulating layer thickness ii determined from the surge voltage is Hi, where i =1,2,3,4.
And when Ti is larger than Hi, selecting the thickness Ti of the insulating layer determined by the power frequency voltage as the thickness of the insulating layer.
And when Ti is less than Hi, selecting the insulating layer thickness Hi determined by the impulse voltage as the insulating layer thickness.
In this embodiment, the necessary thickness of the insulating layer is the basis for ensuring reliable operation of the composite conductor under various possible overvoltage conditions. The proper thickness of the insulating layer can reduce the cost of the composite conductor, improve the current carrying capacity and improve the product quality. The thickness of the insulating layer is calculated under the power frequency voltage and the impact voltage respectively, the calculated values of the power frequency voltage and the impact voltage are compared, and the maximum value is selected as the final thickness of the insulating layer.
In some embodiments of the present application, the material of the insulating layer is improved, and the material of the insulating layer is polypropylene laminated paper, low density polyethylene or polyimide film.
A composite conductor encapsulation system, as shown in fig. 2, comprising:
and the packaging unit is used for packaging the composite conductor.
And the acquisition unit is used for acquiring data information in the composite conductor packaging process.
A determination unit for determining composite conductor encapsulation parameters from the data information.
The control unit is connected with the acquisition unit, the determination unit and the packaging unit and is used for controlling the packaging unit according to the composite conductor packaging parameters;
the acquisition unit is used for acquiring critical current of a conductor material, target critical current of a composite conductor, power frequency voltage and impulse voltage; the determining unit calculates to obtain a current ratio of rated current and critical current of the composite conductor, determines the number of layers of conductor materials based on the current ratio, determines the torsion pitch of the stacked structure according to the target critical current, and determines the thickness of the insulating layer according to the power frequency voltage and the impulse voltage; the packaging unit stacks conductor materials according to the number of the conductor material layers to form a stacked structure, twists the stacked structure according to the twisting pitch, puts the twisted conductor materials into a metal framework, and arranges an insulating layer on the outer side of the metal framework; and installing a protective layer on the insulating layer to obtain the packaged composite conductor.
The application discloses a composite conductor packaging method and a system, comprising the following steps: obtaining critical current of a conductor material, determining a current ratio of rated current of a composite conductor to the critical current, and determining the layer number of the conductor material based on the current ratio; stacking the conductor materials according to the number of the conductor material layers to form a stacked structure; setting a target critical current of the composite conductor, determining a twisting pitch of the stacked structure according to the target critical current, and putting the twisted conductor material into a metal framework; acquiring power frequency voltage and impulse voltage, determining the thickness of an insulating layer according to the power frequency voltage and the impulse voltage, and arranging the insulating layer on the outer side of the metal framework according to the thickness of the insulating layer; and installing a protective layer on the insulating layer to obtain the packaged composite conductor.
The conductor material is packaged after the number of layers of the conductor material, the twisting pitch and the thickness of the insulating layer are determined, so that the packaging process is simplified, the implementation is easy, and the method is suitable for large-scale batch preparation; meanwhile, the mechanical strength of the composite conductor is improved by packaging through a soldering tin method; the composite conductor structure is composed of a conductor material, a metal framework, an insulating layer and a protective layer from inside to outside, so that the thermal stability of the conductor is enhanced, and the self performance of the conductor is maintained.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting the same, and although the present invention is described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that: modifications and equivalents may be made to the invention without departing from the spirit and scope of the invention.

Claims (10)

1. A method of encapsulating a composite conductor, comprising:
obtaining critical current of a conductor material, determining a current ratio of rated current of a composite conductor to the critical current, and determining the layer number of the conductor material based on the current ratio;
stacking the conductor materials according to the number of the conductor material layers to form a stacked structure;
setting a target critical current of the composite conductor, determining a twisting pitch of the stacked structure according to the target critical current, and putting the twisted conductor material into a metal framework;
acquiring power frequency voltage and impulse voltage, determining the thickness of an insulating layer according to the power frequency voltage and the impulse voltage, and arranging the insulating layer on the outer side of the metal framework according to the thickness of the insulating layer;
and installing a protective layer on the insulating layer to obtain the packaged composite conductor.
2. The method of claim 1, wherein the conductive material is encapsulated by soldering;
and soldering tin is filled among the conductor materials, between the conductor materials and the metal framework and between the metal framework and the insulating layer, and the soldering tin is melted by pressure and then fully filled in the gaps in the composite conductor.
3. The method of claim 1, wherein the step of encapsulating the composite conductor,
setting a preset current ratio matrix E0 and a conductor material layer number matrix N0, and setting E0 (E1, E2, E3 and E4) for the preset current ratio matrix E0, wherein E1 is a first preset current ratio, E2 is a second preset current ratio, E3 is a third preset current ratio, E4 is a fourth preset current ratio, and E1 is more than E2 and less than E3 and less than E4;
setting N0 (N1, N2, N3, N4) for the conductor material layer number matrix N0, wherein N1 is a first preset conductor material layer number, N2 is a second preset conductor material layer number, N3 is a third preset conductor material layer number, N4 is a fourth preset conductor material layer number, and N1 is more than N2 and more than N3 and more than N4;
acquiring a current ratio e, and setting the layer number of the conductor material according to the relation between the current ratio e and each preset current ratio;
when E is less than E1, setting the first preset conductor material layer number N1 as the conductor material layer number;
when E1 is more than or equal to E and less than E2, setting the second preset conductor material layer number N2 as the conductor material layer number;
when E2 is more than or equal to E and less than E3, setting the third preset conductor material layer number N3 as the conductor material layer number;
and when the E3 is more than or equal to E and less than the E4, setting the fourth preset number of layers N4 of the conductor material as the number of layers of the conductor material.
4. The method of claim 1, wherein the step of encapsulating the composite conductor,
presetting a target critical current matrix C0 and a twisting pitch matrix P0, and setting C0 (C1, C2, C3 and C4) for the preset target critical current matrix C0, wherein C1 is a first preset target critical current, and C2 is a second preset target critical current; c3 is a third preset target critical current; c4 is a fourth preset target critical current, and C1 is more than C2 and more than C3 and more than C4;
setting P0 (P1, P2, P3, P4) for the twisting pitch matrix P0, wherein P1 is a first twisting pitch, P2 is a second twisting pitch, P3 is a third twisting pitch, P4 is a fourth twisting pitch, and P1 < P2 < P3 < P4;
acquiring a target critical current c of the composite conductor, and setting a twisting pitch of the stacked structure according to the relation between the target critical current c and each preset target critical current;
when C < C1, setting the first twisting pitch P1 as the twisting pitch of the stacked structure;
when C is more than or equal to C1 and less than C2, setting the second twisting pitch P2 as the twisting pitch of the stacking structure;
when C2 is larger than or equal to C and smaller than C3, setting the third twisting pitch P3 as the twisting pitch of the stacking structure;
and when C3 is less than or equal to C and less than C4, setting the fourth twisting pitch P4 as the twisting pitch of the stacked structure.
5. The method of claim 1, wherein the step of encapsulating the composite conductor,
presetting a power frequency voltage matrix A0 and an insulating layer thickness I matrix T0 determined according to the power frequency voltage, and setting A0 (A1, A2, A3 and A4) for the preset power frequency voltage matrix A0, wherein A1 is a first power frequency voltage, A2 is a second power frequency voltage, A3 is a third power frequency voltage, A4 is a fourth power frequency voltage, and A1 is more than A2 and less than A3 and less than A4;
setting T0 (T1, T2, T3 and T4) for the insulating layer thickness I matrix T0, wherein T1 is a first preset insulating layer thickness I, T2 is a second preset insulating layer thickness I, T3 is a third preset insulating layer thickness I, T4 is a fourth preset insulating layer thickness I, and T1 is more than T2 and less than T3 and less than T4;
acquiring power frequency voltage a, and setting the thickness of the insulating layer according to the relation between the power frequency voltage a and each preset power frequency voltage;
when a is smaller than A1, setting the thickness IT 1 of the first preset insulating layer as the thickness of the insulating layer;
when a is more than or equal to A1 and less than A2, setting the thickness IT 2 of the second preset insulating layer as the thickness of the insulating layer;
when a is more than or equal to A2 and less than A3, setting the thickness IT 3 of the third preset insulating layer as the thickness of the insulating layer;
and when A3 is more than or equal to a and less than A4, setting the thickness of the fourth preset insulating layer IT 4 as the thickness of the insulating layer.
6. The method of claim 5, wherein the step of encapsulating the composite conductor,
setting a preset impulse voltage matrix V0 and an insulating layer thickness II matrix H0 determined according to the impulse voltage, and setting V0 (V1, V2, V3 and V4) for the preset impulse voltage matrix V0, wherein V1 is a first impulse voltage, V2 is a second impulse voltage, V3 is a third impulse voltage, V4 is a fourth impulse voltage, and V1 is more than V2 and less than V3 and less than V4;
setting H0 (H1, H2, H3, H4) for the insulating layer thickness II matrix H0, wherein H1 is a first preset insulating layer thickness II, H2 is a second preset insulating layer thickness II, H3 is a third preset insulating layer thickness II, H4 is a fourth preset insulating layer thickness II, and H1 is more than H2 and is more than H3 and is more than H4;
acquiring impulse voltage v, and setting the thickness of the insulating layer according to the relation between the impulse voltage v and each preset impulse voltage;
when V is less than V1, setting the thickness IIH 1 of the first preset insulating layer as the thickness of the insulating layer;
when V1 is not more than V and is less than V2, setting the thickness IIH 2 of the second preset insulating layer as the thickness of the insulating layer;
when V2 is more than or equal to V and less than V3, setting the thickness IIH 3 of the third preset insulating layer as the thickness of the insulating layer;
and when V3 is more than or equal to V and less than V4, setting the thickness IIH 4 of the fourth preset insulating layer as the thickness of the insulating layer.
7. The method of claim 6, wherein the thickness of the insulating layer is the maximum of the thicknesses of the insulating layers determined according to the power frequency voltage and the surge voltage.
8. The method of claim 7, wherein the step of encapsulating the composite conductor,
the method for determining the thickness of the insulating layer comprises the following steps:
the thickness I of the insulating layer is determined according to the power frequency voltage, and is Ti, wherein i =1,2,3,4;
the insulation layer thickness ii determined from the impulse voltage is Hi, where i =1,2,3,4;
when Ti is larger than Hi, selecting the thickness Ti of the insulating layer determined by the power frequency voltage as the thickness of the insulating layer;
and when Ti is less than Hi, selecting the insulating layer thickness Hi determined by the impulse voltage as the insulating layer thickness.
9. The method of claim 1, wherein the step of encapsulating the composite conductor,
the insulating layer is made of polypropylene laminated paper, low-density polyethylene or polyimide film.
10. A composite conductor encapsulation system, comprising:
the packaging unit is used for packaging the composite conductor;
the acquisition unit is used for acquiring data information in the composite conductor packaging process;
a determination unit for determining composite conductor package parameters from the data information;
the control unit is connected with the acquisition unit, the determination unit and the packaging unit and is used for controlling the packaging unit according to the composite conductor packaging parameters;
the acquisition unit is used for acquiring critical current of a conductor material, target critical current of a composite conductor, power frequency voltage and impulse voltage; the determining unit calculates to obtain a current ratio of rated current and critical current of the composite conductor, determines the number of layers of conductor materials based on the current ratio, determines the torsion pitch of the stacked structure according to the target critical current, and determines the thickness of the insulating layer according to the power frequency voltage and the impulse voltage; the packaging unit stacks conductor materials according to the number of the conductor material layers to form a stacked structure, twists the stacked structure according to the twisting pitch, puts the twisted conductor materials into a metal framework, and arranges an insulating layer on the outer side of the metal framework; and installing a protective layer on the insulating layer to obtain the packaged composite conductor.
CN202310255546.0A 2023-03-16 2023-03-16 Composite conductor packaging method and system Active CN115985575B (en)

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