CN1159762C - Process for preparing integrated electric and electronic module based on discrete elements - Google Patents
Process for preparing integrated electric and electronic module based on discrete elements Download PDFInfo
- Publication number
- CN1159762C CN1159762C CNB011452617A CN01145261A CN1159762C CN 1159762 C CN1159762 C CN 1159762C CN B011452617 A CNB011452617 A CN B011452617A CN 01145261 A CN01145261 A CN 01145261A CN 1159762 C CN1159762 C CN 1159762C
- Authority
- CN
- China
- Prior art keywords
- circuit
- power
- constitute
- drive
- adopts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The present invention discloses a process for preparing electronic integrated modules based on discrete elements for electric power, which first proposes a concept of electronic integrated modules based on discrete elements for electric power. A power device and a driving, controlling and protecting circuit are integrated into an independent function module and few external elements are connected through an external pin to constitute a power electronic device with a completion function. The integrated modules carry out ' encapsulating ' for technical and process knotty points in the original design, simplify design difficulty and make the general improvement of the technical performance and the reliability of the power electronic device become possible. The present invention further pushes the prolongation of a power electronic application field.
Description
One, technical field:
The invention belongs to the circuit integrated module of electric and electronic technical field, specifically, is a kind of electronic power integrated module based on discrete component of preparation.
Two, background technology:
Power electronic equipment comprises power circuit, drive circuit, control circuit and protective circuit etc. usually, all is made of discrete component at present.The designer need with the components and parts of realizing the above-mentioned functions circuit one by one layout be installed on the printed circuit board (PCB).This is at present both at home and abroad current trim designs method, the design process of shown in Figure 6 is traditional power electronic equipment.The weak point of the method for this device design is that the design cycle is long, and design difficulty is big, the design cost height.And when designing similar product, all must repeat the similar design process.These problems have seriously restricted the development of power electronic technology and the expansion of application.
Three, summary of the invention
At the problems referred to above, this invention is intended to propose and designs a kind of integrated electric power electronic module.Integrated module is exactly that the power device in the power electronic equipment and driving, control and protective circuit etc. is integrated, one of boil down to has the standalone feature module of a small amount of external pin.By integrated, can make complicated circuit be converted into the very simple module of external structure.Integrated technology has carried out " encapsulation " to the technology in the design and the difficult point of technology, make the designer no longer need to get involved too much the detail of each several part in the module, but by selecting one or several integration standard module and appropriate combination, but the just design of finishing device, corresponding installation, debug process are also greatly simplified.Also can solve in original device by the optimal design of module itself such as key technical problems such as distributed constant, electromagnetic compatibilities, thereby improve the technical performance and the reliability of power electronic equipment comprehensively, make the power electronic system that structure is more complicated, function is abundanter become possibility, further expand the application of power electronic technology.Shown in Figure 7 is the design process of power electronic equipment behind the employing integrated technology.
The technical solution used in the present invention is: based on the preparation of the electronic power integrated module of discrete component, comprise power circuit 1, drive circuit 2, control circuit 3 and the protective circuit 4 on power electronic equipment, used usually, with small number of external element or circuit, be characterized in: above-mentioned each discrete components and parts that will constitute Power Electronic Circuit become one, form one independently, have a module of complete function; Preparation according to the following steps:
1) power circuit 1 of this module adopts MOSFET or IGBT device, and the heat conductive insulating layer of a silastic material is set between the metal substrate of its radiating bottom plate with module, and evenly applies heat-conducting silicone grease to strengthen heat-conducting effect on the insulating barrier two sides;
2) power component of power circuit 1 is welded on the bottom surface of printing board PCB 1, and printed circuit board (PCB) adopts the epoxy substrate, to bear stronger compression.Symmetric position is established installing hole around circuit board, and with circuit board and the fastening installation of radiating bottom plate, installing force makes each power device on the PCB1 bottom surface can both fully contact with radiating bottom plate enough and uniformly, guarantees reliable heat transfer by screw.Power device is reserved certain spacing each other and between the electric part of screw and circuit board, to satisfy the requirement of insulation;
3) pliotron constituted push-pull amplifier circuit during the element of drive circuit 2 adopted, and especially was fit to drive high power device.Drive signal links to each other with power circuit by pulse isolation transformer, has both reduced the interference of switching noise to the weak electric signal of driving and control circuit etc., makes again between the drive signal and isolates mutually.All drive circuits are installed in the front of printing board PCB 1, have not only made full use of the geometric space of module but also further from switching noise source far away;
4) control circuit 3 adopts special-purpose pulse width modulation (hereinafter to be referred as PWM) control chip and Resistor-Capacitor Unit to constitute, and the control impuls output signal further improves the current driving ability of signal through the processing of one-level cmos buffer device; Protective circuit 4 adopts operational amplifier to constitute; The two is installed in the front of printing board PCB 2, and is connected with CON2 by connector CON1 with drive circuit 2, and the outside lead-in wire that connects is drawn by the side.
Power output can be from 1kW to the 10kW scope.
Outstanding feature of the present invention is the power grade height of integration module, and volume is little.Existing power integration module is an example with the one chip Switching Power Supply, and generally about 3~10W, the upper limit is no more than 150W to its power output, and circuit topology can only adopt the flyback circuit, belongs to low power range substantially.And the designed integration module power output of the present invention can not wait from 1kW to the 10kW scope, the blank of high-power integration module design in having filled up.
Other characteristics of the present invention are, power device adopts MOSFET or IGBT, the physical circuit topology is not limited to a certain specific forms, is main flow with the bridge-type topology that adapts to large-power occasions, also can adopt half-bridge circuit or not with the Boost or the Buck circuit of isolating transformer; Pliotron BD327/238 constituted push-pull amplifier circuit during the element of drive circuit adopted, and whether the unified drive pattern of recommending not only is applicable to driven MOS FET but also can drives IGBT need pulse isolation transformer to be determined on a case-by-case basis; Control circuit adopts dedicated PWM control chip and Resistor-Capacitor Unit to constitute, and can adopt voltage mode, peak-current mode or average-current mode control; Protective circuit adopts operational amplifier to constitute I/O and owes/overvoltage, owes/overcurrent protection.
Power circuit adopts 4 IGBT to constitute full-bridge circuit, and 4 groups of independent driving circuits constitute push-pull amplifier circuit by middle pliotron BD237/238, drive the IGBT of 4 brachium pontis respectively, and drive output signal is isolated by 4 pulse transformers and main circuit; Control circuit adopts dedicated PWM chip UC3875 to constitute phase-shifting full-bridge zero-voltage zero-current soft switch control (ZVZCS), and peripheral circuit constitutes voltage, current double closed-loop average current control mode circuit by operational amplifier LM324; Protective circuit adopts operational amplifier LM324 to constitute output overvoltage, overcurrent protection.
Power circuit adopts 4 power MOSFETs to constitute full-bridge circuit; 4 groups of independent driving circuits constitute push-pull amplifier circuit by middle pliotron BD237/238, drive the MOSFET of 4 brachium pontis respectively, and drive output signal is isolated by 4 pulse transformers and main circuit; Control circuit adopts dedicated PWM chip UC3875 to constitute phase-shifting full-bridge zero-voltage zero-current soft switch control (ZVZCS), and constitutes voltage, current double closed-loop peak current control model circuit jointly with peripheral circuit; Protective circuit adopts operational amplifier LM324 to constitute output overvoltage, overcurrent protection.
Power circuit adopts 4 power MOSFETs and 4 soft-recovery diodes to constitute the soft switch Boost of Zero voltage transition (ZVT) circuit; 2 groups of independent driving circuits constitute push-pull amplifier circuit by middle pliotron BD237/238, drive the MOSFET of main switch and auxiliary switch respectively; Control circuit adopts dedicated PWM chip UC3854 to constitute voltage, current double closed-loop average current control mode circuit; And constitute false impulse with logic control chip CD4013 and form circuit.
This invention has proposed the notion of innovative electronic power integrated module based on discrete component first.Each discrete components and parts that this electronic power integrated module will constitute Power Electronic Circuit become one, form one independently, have a module of complete function.Module connects outside a few components by limited several external pin, just can realize a function that power electronic equipment is complete.
(1) the power electronics integrated technology has been realized " encapsulation " to the difficult point problem of major technology and technology, thereby greatly reduced the difficulty of device design, making it becomes the competent work of engineer that each possesses basic quality, and then has promoted the expansion of power electronic technology application.
(2) though the design difficulty of electronic power integrated module is big, design cost is also higher, after producing in batches, its cost can reduce.And concerning device, design difficulty and design cost will reduce greatly, and the design cycle also will shorten.
(3) integrated technical performance and the reliability that has improved power electronic equipment, and make the power electronic system that structure is more complicated, function is abundanter become possibility, this is a key of utilizing electric energy more flexibly, efficiently.
(4) integrated can the solution such as many critical technical problems such as distributed constant, electromagnetic compatibilities, thus the technical performance of power electronic equipment improved comprehensively.
Four, description of drawings:
Fig. 1 is the conceptual schematic view of electronic power integrated module of the present invention;
The structural representation of Fig. 2 electronic power integrated module of the present invention;
The application example schematic diagram of Fig. 3 electronic power integrated module;
Fig. 4 is an electronic power integrated module model machine photo of the present invention;
Fig. 5 is the integration module that the present invention is used for soft switch power factor correcting;
Fig. 6 is the design process schematic diagram of traditional power electronic equipment;
Fig. 7 adopts the design process schematic diagram of power electronic equipment behind the integration module.
Five, embodiment
The present invention is described in further detail below in conjunction with drawings and Examples.
The inventor has provided the following examples, but the present invention is not limited to these embodiment.
Embodiment 1: referring to Fig. 1,2, by the present invention technical scheme, preparation based on the electronic power integrated module of discrete component, comprise power circuit 1, drive circuit 2, control circuit 3 and the protective circuit 4 on power electronic equipment, used usually, with small number of external element or circuit, above-mentioned each the discrete components and parts that constitute Power Electronic Circuit are become one, form one independently, have a module of complete function; Preparation according to the following steps:
1) power circuit 1 of this module adopts MOSFET or IGBT device, and the heat conductive insulating layer of a silastic material is set between the metal substrate of its radiating bottom plate with module, and evenly applies heat-conducting silicone grease to strengthen heat-conducting effect on the insulating barrier two sides;
2) power component of power circuit 1 is welded on the bottom surface of printing board PCB 1, and printed circuit board (PCB) adopts epoxy substrate (3-5mm), to bear stronger compression.Symmetric position is established installing hole around circuit board, and with circuit board and the fastening installation of radiating bottom plate, installing force makes each power device on the PCB1 bottom surface can both fully contact with radiating bottom plate enough and uniformly, guarantees reliable heat transfer by screw.Power device is reserved certain spacing each other and between the electric part of screw and circuit board, to satisfy the requirement of insulation;
3) pliotron BD327/238 constituted push-pull amplifier circuit during drive circuit 2 elements adopted, and especially was fit to drive high power device.Drive signal links to each other with power circuit by pulse isolation transformer, has both reduced the interference of switching noise to the weak electric signal of driving and control circuit etc., makes again between the drive signal and isolates mutually.All drive circuits are installed in the front of printing board PCB 1, have not only made full use of the geometric space of module but also further from switching noise source far away;
4) control circuit 3 adopts dedicated PWM control chip and Resistor-Capacitor Unit to constitute, and the control impuls output signal further improves the current driving ability of signal through the processing of one-level cmos buffer device; Protective circuit 4 adopts operational amplifier to constitute; The two is installed in the front of printing board PCB 2, and is connected with CON2 by connector CON1 with drive circuit 2, and the outside lead-in wire that connects is drawn by the side.
Characteristics of the present invention are power grade height of integration module, and volume is little.Existing power integration module is an example with the one chip Switching Power Supply, and generally about 3~10W, the upper limit is no more than 150W to its power output, and circuit topology can only adopt the flyback circuit, belongs to low power range substantially.And the designed integration module power output of the present invention can not wait from 1kW to the 10kW scope, the blank of high-power integration module design in having filled up.
In addition, different with the one chip power module, integrated technique of the present invention aims at the high power module design, and it is that integrated the going on foot with control circuit integrated two of branch high power device carried out, and two parts is combined into one at last again.Purpose is for the switching noise that overcomes the high-power switch device that bears high pressure, the big electric current electromagnetic interference to control signal.If just simply these several partial circuits combinations are crimped on the same base plate, complicated electromagnetic interference will certainly make the whole module can't operate as normal between the each several part.
In the powerful integration module process of preparation, the subject matter that faces is: the module volume reduce and power device between can good heat radiating contradiction and the integrated and forceful electric power signal of main circuit, control circuit etc. to the contradiction between the electromagnetic interference of weak electric signal.Concrete critical technological point is:
1) how to guarantee the power device secure heat dissipation
The power device of using in the actual module generally has 4 or more, therefore when welding and installation, must strictness accomplish that the heat-radiating substrate of each power device all contacts fully with metal base plate, and impose enough installing forces.Otherwise, if a power device and base plate loose contact are arranged, must cause local overheating to be damaged because of radiating effect is bad, and can cause chain reaction thus, cause module whole to be damaged.In addition, the circuit board PCB1 of bonding power device and heat dissipation metal base plate all are difficult for the thin excessively sheet material of selection thickness, otherwise understand flexural deformation under the installing force effect, can cause the loose contact problem of power device and radiating bottom plate equally.
2) how to overcome electromagnetic interference problem
What driving, control and protective circuit were handled all is the faint signal of telecommunication, and they are near more apart from the power device that bears high pressure, big electric current, are vulnerable to the interference of switching noise more, produce misoperation, even causes module whole to be damaged.The way of handling is main circuit and the different aspect in control circuit office on geometric space; The ground wire of pcb board adopts the large tracts of land grid to fill; Can increase screen (control circuit wraps up with screen) or jamproof element (as common mode inductance etc.) in case of necessity.
Embodiment 2: present embodiment is to use the present invention to prepare designed three-phase 380V interchange input 10A/220V direct current output power operating power model machine, as Fig. 3, its power circuit adopts 4 IGBT to constitute full-bridge circuit, pliotron BD237/238 formation was recommended amplification during 4 groups of drive circuits all adopted, drive 4 IGBT respectively, and isolate by 4 pulse transformers and main circuit; Control circuit adopts dedicated PWM chip UC3875 to constitute phase-shifting full-bridge zero-voltage zero-current soft switch control (ZVZCS), peripheral circuit constitutes voltage, current double closed-loop average current control mode circuit by operational amplifier LM324, the control impuls output signal further improves the current driving ability of signal through the processing of one-level cmos buffer device CD4050; Protective circuit adopts operational amplifier LM324 to constitute output overvoltage, overcurrent protection.Its preparation is with embodiment 1.Compare with the same device that does not adopt integration module, this apparatus structure is obviously simplified, is designed and debugs easily, the reliability height, and compact conformation, volume are little, in light weight.
Embodiment 3: shown in Figure 4 is to use the present invention to prepare the electronic power integrated module model machine photo that designed single-phase 220V exchanges input 20A/48V direct current output communication power supply.Its power circuit adopts 4 power MOSFETs to constitute full-bridge circuit; Pliotron BD237/238 formation was recommended amplification during 4 groups of drive circuits all adopted, and drove 4 power MOSFETs respectively, and isolated by 4 pulse transformers and main circuit; Control circuit adopts dedicated PWM chip UC3875 to constitute phase-shifting full-bridge zero-voltage zero-current soft switch control (ZVZCS), and constitute voltage, current double closed-loop peak current control model circuit jointly with peripheral circuit, the control impuls output signal further improves the current driving ability of signal through the processing of one-level cmos buffer device CD4050; Protective circuit adopts a plurality of operational amplifier LM324 to constitute output overvoltage, overcurrent protection.Its preparation is with embodiment 1.This module has been successfully applied to 48V/20A communication power supply model machine, and obtains good result of use.
Embodiment 4: shown in Figure 5 is to use the present invention to prepare designed single-phase 220V interchange input 380V/10A direct current output soft switch power factor correcting (PFC) module.Its power circuit adopts 4 power MOSFETs and 4 soft-recovery diodes to constitute the soft switch Boost of Zero voltage transition (ZVT) circuit; Pliotron BD237/238 formation was recommended amplification during 2 groups of independent driving circuits all adopted, and drove the power MOSFET of main switch and auxiliary switch respectively; Control circuit adopts dedicated PWM chip UC3854 to constitute voltage, current double closed-loop average current control mode circuit, and the control impuls output signal further improves the current driving ability of signal through the processing of one-level cmos buffer device CD4050; Increase logic control chip CD4013 and constitute false impulse formation circuit.Its preparation is with embodiment 1.This module has been successfully applied to 48V/50A communication power supply soft switch power factor correcting (PFC) module, and obtains good result of use.
Claims (4)
1. preparation based on the electronic power integrated module of discrete component, comprise power circuit [1], drive circuit [2], control circuit [3] and the protective circuit [4] on power electronic equipment, used usually, with small number of external element or circuit, it is characterized in that: above-mentioned each discrete components and parts that will constitute Power Electronic Circuit become one, form one independently, have a module of complete function; Preparation according to the following steps
A) power circuit of this module [1] adopts MOSFET or IGBT device, and the heat conductive insulating layer of a silastic material is set between the metal substrate of its radiating bottom plate with module, and evenly applies heat-conducting silicone grease to strengthen heat-conducting effect on the insulating barrier two sides;
B) power component of power circuit [1] is welded on the bottom surface of printing board PCB 1, and printed circuit board (PCB) adopts the epoxy substrate, to bear stronger compression; Symmetric position is established installing hole around circuit board, and with circuit board and the fastening installation of radiating bottom plate, installing force makes each power device on the PCB1 bottom surface can both fully contact with radiating bottom plate enough and uniformly, guarantees reliable heat transfer by screw; Power device is reserved certain spacing each other and between the electric part of screw and circuit board, to satisfy the requirement of insulation;
C) pliotron constituted push-pull amplifier circuit during drive circuit [2] element adopted, and especially was fit to drive high power device; Drive signal links to each other with power circuit by pulse isolation transformer, has both reduced the interference of switching noise to the weak electric signal of driving and control circuit etc., makes again between the drive signal and isolates mutually; All drive circuits are installed in the front of printing board PCB 1, have not only made full use of the geometric space of module but also further from switching noise source far away;
D) control circuit [3] adopts special-purpose pulse width modulation control chip and Resistor-Capacitor Unit to constitute, and the control impuls output signal further improves the current driving ability of signal through the processing of one-level cmos buffer device CD4050; Protective circuit [4] adopts operational amplifier to constitute; The two is installed in the front of printing board PCB 2, and is connected with CON2 by connector CON1 with drive circuit [2], and the outside lead-in wire that connects is drawn by the side;
Power output can be from 1kW to the 10kW scope.
2. the preparation of the electronic power integrated module based on discrete component according to claim 1, it is characterized in that: power circuit [1] adopts 4 IGBT to constitute full-bridge circuit, 4 groups of independent driving circuits constitute push-pull amplifier circuit by middle pliotron BD237/238, drive the IGBT of 4 brachium pontis respectively, drive output signal is isolated by 4 pulse transformers and main circuit; Control circuit adopts special-purpose pulse width modulation chip UC3875 to constitute the control of phase-shifting full-bridge zero-voltage zero-current soft switch, and peripheral circuit constitutes voltage, current double closed-loop average current control mode circuit by operational amplifier LM324; Protective circuit adopts operational amplifier LM324 to constitute output overvoltage, overcurrent protection.
3. the preparation of the electronic power integrated module based on discrete component according to claim 1 is characterized in that: power circuit adopts 4 power MOSFETs to constitute full-bridge circuits; 4 groups of independent driving circuits constitute push-pull amplifier circuit by middle pliotron BD237/238, drive the MOSFET of 4 brachium pontis respectively, and drive output signal is isolated by 4 pulse transformers and main circuit; Control circuit adopts special-purpose pulse width modulation chip UC3875 to constitute the control of phase-shifting full-bridge zero-voltage zero-current soft switch, and constitutes voltage, current double closed-loop peak current control model circuit jointly with peripheral circuit; Protective circuit adopts operational amplifier LM324 to constitute output overvoltage, overcurrent protection.
4. the preparation of the electronic power integrated module based on discrete component according to claim 1 is characterized in that: power circuit adopts 4 power MOSFETs and 4 soft-recovery diodes to constitute the soft switch Boost of Zero voltage transition circuit; 2 groups of independent driving circuits constitute push-pull amplifier circuit by middle pliotron BD237/238, drive the MOSFET of main switch and auxiliary switch respectively; Control circuit adopts special-purpose pulse width modulation chip UC3854 to constitute voltage, current double closed-loop average current control mode circuit; And constitute false impulse with logic control chip CD4013 and form circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB011452617A CN1159762C (en) | 2001-12-28 | 2001-12-28 | Process for preparing integrated electric and electronic module based on discrete elements |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB011452617A CN1159762C (en) | 2001-12-28 | 2001-12-28 | Process for preparing integrated electric and electronic module based on discrete elements |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1356764A CN1356764A (en) | 2002-07-03 |
CN1159762C true CN1159762C (en) | 2004-07-28 |
Family
ID=4678101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011452617A Expired - Fee Related CN1159762C (en) | 2001-12-28 | 2001-12-28 | Process for preparing integrated electric and electronic module based on discrete elements |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1159762C (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100435304C (en) * | 2005-03-31 | 2008-11-19 | 西安交通大学 | Preparation method of electronic power integrated module based on metal ball crimping interconnection technique |
CN101126202B (en) * | 2006-08-15 | 2012-03-28 | 金羚电器有限公司 | Washing machine electronic controller and washing machine using the same |
CN101217249B (en) * | 2007-01-05 | 2010-05-19 | 台达电子工业股份有限公司 | Detachable transducer of comparatively better efficiency |
JP2008187101A (en) * | 2007-01-31 | 2008-08-14 | Yamaha Corp | Semiconductor device and mounting structure of semiconductor device |
CN101145428B (en) * | 2007-07-31 | 2012-10-10 | 上海美星电子有限公司 | Low spoilage module type transformer packaging structure |
US7800222B2 (en) * | 2007-11-29 | 2010-09-21 | Infineon Technologies Ag | Semiconductor module with switching components and driver electronics |
CN101867311B (en) * | 2009-04-17 | 2012-03-07 | 凹凸电子(武汉)有限公司 | Power system |
US8456101B2 (en) | 2009-04-17 | 2013-06-04 | O2Micro, Inc. | Power systems with platform-based controllers |
CN101834176B (en) * | 2010-04-26 | 2012-10-24 | 日银Imp微电子有限公司 | Half-bridge drive circuit chip |
CN101860182B (en) * | 2010-06-09 | 2013-02-27 | 永济新时速电机电器有限责任公司 | Multifunctional integrated IGBT drive circuit module |
CN102299144A (en) * | 2011-06-15 | 2011-12-28 | 佛山市顺德区和而泰电子科技有限公司 | Discreet IGBT module and substrate thereof |
CN102264200B (en) * | 2011-07-01 | 2014-03-26 | 江苏宏微科技有限公司 | Intelligent power module |
CN103475226A (en) * | 2012-06-07 | 2013-12-25 | 上海凝睿电子科技有限公司 | Single-chip isolating regulated power supply module |
CN106611758B (en) * | 2015-10-23 | 2020-01-03 | 台达电子工业股份有限公司 | Integrated power module packaging structure |
TWI550391B (en) * | 2015-10-23 | 2016-09-21 | 台達電子工業股份有限公司 | Integrated power module package structure |
JP2018195694A (en) * | 2017-05-17 | 2018-12-06 | 株式会社Soken | Power converter |
CN109962583A (en) * | 2017-12-26 | 2019-07-02 | 杭州三花研究院有限公司 | Electrodynamic pump |
-
2001
- 2001-12-28 CN CNB011452617A patent/CN1159762C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1356764A (en) | 2002-07-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1159762C (en) | Process for preparing integrated electric and electronic module based on discrete elements | |
CN105449987B (en) | Power supply device | |
US9854708B2 (en) | Unit for semiconductor device | |
EP1868242B1 (en) | Power semiconductor module and fabrication method thereof | |
CN103078471B (en) | Power module and current converter | |
CN101263547A (en) | Semiconductor half-bridge module with low inductance | |
CN1207947C (en) | Printed circuit board assembly | |
CN110401365B (en) | GaN bridgeless PFC power module for high-power charger | |
CN106972762A (en) | Power module | |
CN111162051B (en) | Power terminal, power module packaging structure and packaging method | |
CN101494175B (en) | Three-layer stereo power encapsulation method and structure | |
CN110506330A (en) | Power electronics modules and electric power converter comprising the module | |
US11320879B2 (en) | Power supply module and electronic device | |
CN109980955A (en) | Intelligent power module and air conditioner | |
CN1255774A (en) | Two electrodes, three-phase voltage increasing converter and method for reducing its distortion of general harmonic | |
CN2385497Y (en) | Contactless soldering point type switch power supply module | |
CN111327207B (en) | IGBT power unit and submodule with same | |
CN114725076A (en) | Power module and three-phase motor driver | |
CN209833393U (en) | Power module of electric automobile | |
CN101465342A (en) | Encapsulation structure for power-supply module | |
CN207124193U (en) | IPM modules and vehicle | |
CN110071098A (en) | A kind of method of power modules capacitance arrangement | |
CN216928548U (en) | Copper-clad ceramic plate for IGBT module | |
CN209963055U (en) | IGBT H bridge module | |
CN211150548U (en) | Integrated multi-pin power module |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C19 | Lapse of patent right due to non-payment of the annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |