CN115963437A - Multi-range magnetic sensor, magnetic field measuring method and conductor preparation method - Google Patents
Multi-range magnetic sensor, magnetic field measuring method and conductor preparation method Download PDFInfo
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- CN115963437A CN115963437A CN202211646208.1A CN202211646208A CN115963437A CN 115963437 A CN115963437 A CN 115963437A CN 202211646208 A CN202211646208 A CN 202211646208A CN 115963437 A CN115963437 A CN 115963437A
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Abstract
The application relates to the technical field of magnetic field measurement, in particular to a multi-range magnetic sensor, a magnetic field measurement method and a conductor preparation method. The multirange magnetic sensor comprises a plurality of conductors, wherein each conductor comprises a first arm and a second arm which are in a cross-shaped structure; the first arms of the conductors are connected end to end, and the size of the first arms of the conductors is gradually reduced from the head end to the tail end; the second arms of the conductors are parallel to each other, and the size of the second arms of the conductors is gradually reduced from the head end to the tail end; each conductor comprises a heavy metal layer, a magnetic sensitive film layer and an insulating substrate layer, wherein the heavy metal layer is positioned on the upper surface of the magnetic sensitive film layer, and the magnetic sensitive film layer is arranged on the upper surface of the insulating substrate layer. The application provides a magnetic sensor capable of providing different range ranges.
Description
Technical Field
The application relates to the technical field of magnetic field measurement, in particular to a multi-range magnetic sensor, a magnetic field measurement method and a conductor preparation method.
Background
The magnetic sensor is a device which senses the change of a magnetic field and converts the change into an electric signal, and is widely applied to the fields of automobile industry, smart power grids, geological exploration, biomedical treatment and the like. A magnetic sensor is a device that senses a change in a magnetic field and converts the change into an electrical signal.
At present, a plurality of different types of magnetic sensors exist, each magnetic sensor can independently realize magnetic field measurement in different range ranges, however, because the magnetic field coverage range in some fields is wide, in order to realize comprehensive coverage of magnetic field detection, the magnetic sensors in a plurality of different range ranges are often required to be combined to realize the detection requirement of full coverage.
However, because there are differences between different types of magnetic sensors, there is a compatibility problem in assembling a plurality of magnetic sensors to achieve full coverage detection, and thus, there is a need for improvement.
Disclosure of Invention
In view of the above, it is necessary to provide a multi-range magnetic sensor, a magnetic field measuring method, and a conductor manufacturing method capable of providing different ranges in view of the above technical problems.
In a first aspect, the present application provides a multi-range magnetic sensor comprising a plurality of conductors, each conductor comprising a first arm and a second arm in a cruciform configuration;
the first arms of the conductors are connected end to end, and the size of the first arms of the conductors is gradually reduced from the head end to the tail end; the second arms of the conductors are parallel to each other, and the size of the second arm of each conductor is gradually reduced from the head end to the tail end;
each conductor comprises a heavy metal layer, a magnetic sensitive film layer and an insulating substrate layer, wherein the heavy metal layer is positioned on the upper surface of the magnetic sensitive film layer, and the magnetic sensitive film layer is arranged on the upper surface of the insulating substrate layer.
In one embodiment, the insulating substrate layer is a single crystalline insulating substrate layer.
In one embodiment, the magnetically susceptible thin film layer is an epitaxial single crystal thin film having a lattice mismatch with the insulating substrate layer of less than 3%.
In one embodiment, the insulating substrate layer is MgAl 2 O 4 The single crystal substrate and the magnetic sensitive film layer are NiCo with the thickness of 5-25 nm 2 O 4 And (3) epitaxial thin films.
In one embodiment, the insulating substrate layer is an MgO single crystal substrate, and the magnetic sensitive film layer is Fe with the thickness of 15-40 nm 3 O 4 And (3) epitaxial thin films.
In one embodiment, the insulating substrate layer is SrTiO 3 The single crystal substrate and the magnetic sensitive film layer are La with the thickness of 6-30 nm 0.67 Sr 0.33 Mn 0.85 Ru 0.15 O 3 。
In one embodiment, the first arm of each conductor has a length of 50 to 200 μm and a width of 50 to 100 μm; the length of each conductor second arm is 10-100 μm.
In a second aspect, the present application provides a magnetic field measurement method, comprising:
applying a first working current to a multi-range magnetic sensor placed in a magnetic field to be measured so that the multi-range magnetic sensor is in a magnetic field measurement mode; wherein, the multi-range sensor is the multi-range sensor;
measuring the measurement voltage of the second arm of each conductor of the multi-range magnetic sensor;
and determining the magnetic field size of the magnetic field to be measured according to each measuring voltage.
In one embodiment, determining the magnitude of the magnetic field to be measured according to each measurement voltage comprises:
comparing each measured voltage with a reference voltage; wherein, the reference voltage is half of the saturation voltage output by the multi-range magnetic sensor in the saturation magnetic field;
determining a second arm corresponding to the measurement voltage with the minimum difference value with the reference voltage, and taking the second arm as a target arm;
and determining the magnetic field size of the magnetic field to be measured according to the measurement voltage of the target arm.
In one embodiment, determining the magnitude of the magnetic field to be measured according to the measurement voltage of the target arm comprises:
determining the magnetic field size of the magnetic field to be measured in the corresponding measuring range based on the sensitivity of the conductor corresponding to the target arm, the first working current and the measuring voltage of the target arm;
and determining the magnetic field size of the magnetic field to be measured in the corresponding measuring range as the magnetic field size of the magnetic field to be measured.
In one embodiment, the magnetic field measurement method further comprises: applying a second working current to the multi-range magnetic sensor placed in the magnetic field to be measured so that a conductor at the head end in the multi-range magnetic sensor is in a magnetic field recording mode; wherein the second working current is less than the first working current;
measuring a recording voltage of a second arm of a conductor located at a head end in the multi-range magnetic sensor;
and recording the magnetic field direction of the magnetic field to be measured according to the recording voltage and the abnormal Hall effect curve of the conductor positioned at the head end in the multi-range magnetic sensor.
In a third aspect, the present application also provides a magnetic field measuring device, comprising:
the testing module is used for applying a first working current to the multi-range magnetic sensor placed in a magnetic field to be measured so as to enable the multi-range magnetic sensor to be in a magnetic field measuring mode; wherein, the multi-range sensor is the multi-range sensor;
the detection module is used for measuring the measurement voltage of the second arm of each conductor of the multi-range magnetic sensor;
and the calculation module is used for determining the magnetic field size of the magnetic field to be measured according to each measurement voltage.
In a fourth aspect, the present application further provides a computer device, including a memory and a processor, where the memory stores a computer program, and the processor implements the following steps when executing the computer program:
applying a first working current to a multi-range magnetic sensor placed in a magnetic field to be measured so that the multi-range magnetic sensor is in a magnetic field measurement mode; wherein, the multi-range sensor is the multi-range sensor;
measuring a measurement voltage of a second arm of each conductor of the multi-range magnetic sensor;
and determining the magnetic field size of the magnetic field to be measured according to each measuring voltage.
In a fifth aspect, the present application further provides a computer readable storage medium having a computer program stored thereon, the computer program when executed by a processor implementing the steps of:
applying a first working current to a multi-range magnetic sensor placed in a magnetic field to be measured so that the multi-range magnetic sensor is in a magnetic field measurement mode; wherein, the multi-range sensor is the multi-range sensor;
measuring the measurement voltage of the second arm of each conductor of the multi-range magnetic sensor;
and determining the magnetic field size of the magnetic field to be measured according to each measurement voltage.
In a sixth aspect, the present application also provides a method for preparing a conductor, where the conductor is used for constructing a multi-range magnetic sensor, and the method includes:
preparing a magnetic sensitive film layer on the insulating substrate layer by adopting a magnetron sputtering or pulse laser deposition method;
preparing a heavy metal layer on the magnetic sensitive film layer;
protecting the cross structure patterns of the first arm and the second arm of each conductor by adopting a standard photoetching process, and removing the other unprotected magnetic induction thin film layers and heavy metal layers by using a wet etching method;
and obtaining an electrode pattern structure by adopting a photoetching alignment process, and plating and etching the electrode pattern structure at the two ends of the second arm of each conductor respectively.
According to the multi-range magnetic sensor, the magnetic field measuring method and the conductor preparation method, when constant current is introduced into each conductor in a magnetic field to be measured, the size of each conductor from the head end to the tail end (the size of the first arm and the size of the second arm) in the multi-range magnetic sensor is in a decreasing trend, so that the current density in each conductor from the head end to the tail end in the multi-range magnetic sensor is in an increasing trend, the magnetic field range corresponding to the conductor from the head end to the tail end is gradually increased, the introduced constant current is not required to be adjusted frequently, a plurality of different range ranges can be obtained, the conductors are made of the same materials and are connected end to end, the difference is small, and the compatibility problem does not exist.
Drawings
FIG. 1 is a schematic diagram of a multi-range magnetic sensor in one embodiment;
FIG. 2 is a schematic diagram of a conductor structure in one embodiment;
FIG. 3 is a schematic diagram of an abnormal Hall effect curve for any one conductor in one embodiment;
FIG. 4 is a flow diagram illustrating a method for measuring a magnetic field according to one embodiment;
FIG. 5 is a schematic diagram of various measured voltages in one embodiment;
FIG. 6 is a schematic flow chart of determining a target arm in one embodiment;
FIG. 7 is a schematic flow chart illustrating the operation of placing the multi-range magnetic sensor in a magnetic recording mode in one embodiment;
FIG. 8 is a schematic flow chart of a magnetic field measuring device in one embodiment;
FIG. 9 is a diagram of the internal structure of a computer device in one embodiment;
FIG. 10 is a schematic diagram of a conductor preparation flow in one embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
A magnetic sensor is a device that senses a change in a magnetic field and converts the change into an electrical signal. Thus, the input to the magnetic sensor is a magnetic field and the output is an electrical signal. A typical magnetic sensor is a hall sensor, and the hall effect is considered to be a phenomenon in which, in the case where a current flows in a direction passing through a magnetic field, a potential difference is generated in a direction perpendicular to both the current direction and the magnetic field direction. Further, the abnormal hall effect indicates that the transverse conductivity of the conductor material is not only related to the normal hall effect, but also includes an abnormal term related to the magnetization of the conductor material, which is constant when the conductor material reaches the saturation magnetization. The magnetic sensor material prepared based on the abnormal Hall effect has the following characteristics: the abnormal Hall output curve of the magnetic sensor material passes through the origin; the abnormal Hall output curve has very obvious change along with the change of an external magnetic field, and has higher sensitivity, wherein the sensitivity is the slope of the abnormal Hall output curve in a measuring range.
At present, people put forward higher requirements on the integration level and the multifunctional characteristic of a magnetic sensor, especially the requirement on the magnetic field detection range, and in order to realize the comprehensive coverage of magnetic field detection in some fields, for the existing magnetic sensor with only one range, the magnetic sensor with a plurality of different ranges is often required to be combined to meet the requirement on the full-coverage magnetic field measurement. However, since there may be technical differences between magnetic sensors with different ranges, there are problems of assembly compatibility and miniaturization integration of the assembled magnetic sensors when assembling a plurality of magnetic sensors with different ranges.
The present embodiment provides a multi-range magnetic sensor, which includes a plurality of conductors, each conductor including a first arm and a second arm in a cross-shaped structure; the first arms of the conductors are connected end to end, and the size of the first arms of the conductors is gradually reduced from the head end to the tail end; the second arms of each conductor are parallel to each other, and the size of the second arm of each conductor decreases from the head end to the tail end.
Exemplarily, as shown in fig. 1, the multi-range magnetic sensor is composed of conductors of a 5-level cross structure, a conductor at the head end is used as a first-level conductor, and the rest are sequentially used as a second-level conductor, a third-level conductor, a fourth-level conductor and a fifth-level conductor; the second arms of the conductors in each stage are respectively a second arm 104 of the first-stage conductor, a second arm 105 of the second-stage conductor, a second arm 106 of the third-stage conductor, a second arm 107 of the fourth-stage conductor and a second arm 108 of the fifth-stage conductor; the first arms of the conductors of each stage are respectively the first arm 109 of the first stage conductor, the first arm 110 of the second stage conductor, the first arm 111 of the third stage conductor, the first arm 112 of the fourth stage conductor and the first arm 113 of the fifth stage conductor.
Wherein the width of the second arm 104 of the first level conductor is greater than the width of the second arm 105 of the second level conductor, the width of the second arm 105 of the second level conductor is greater than the width of the second arm 106 of the third level conductor, the width of the second arm 106 of the third level conductor is greater than the width of the second arm 107 of the fourth level conductor, and the width of the second arm 107 of the fourth level conductor is greater than the width of the second arm 108 of the fifth level conductor. The width of the first arm 113 of the fifth level conductor is less than half of the width of the first arm 112 of the fourth level conductor, the width of the first arm 112 of the fourth level conductor is less than half of the width of the first arm 111 of the third level conductor, the width of the first arm 111 of the third level conductor is less than half of the width of the first arm 110 of the second level conductor, and the width of the first arm 110 of the second level conductor is less than half of the width of the first arm 109 of the first level conductor.
Optionally, as shown in fig. 2, each conductor includes a heavy metal layer 103, a magnetic sensitive thin film layer 102, and an insulating substrate layer 101, where the heavy metal layer 103 is located on the upper surface of the magnetic sensitive thin film layer 102, and the magnetic sensitive thin film layer 102 is located on the upper surface of the insulating substrate layer 101. In order to package each conductor in the multi-range magnetic sensor, the insulating substrate layers 101 of each conductor are communicated to form an insulating substrate layer 101 plane, namely an insulating substrate plane 101' in fig. 1.
Further, from the characteristics of the abnormal hall curve, it is known that the magnetic field range corresponding to each conductor is related to the sensitivity of the conductor itself, and the sensitivity of the conductor is related to the magnitude of the current density passing through the conductor, and the higher the current density is, the lower the sensitivity is, whereas the lower the current density is, the higher the sensitivity is.
Illustratively, any one of the conductors in this embodiment includes a first arm and a second arm perpendicular to each other, the magnetic field direction of the magnetic field to be measured is a direction perpendicular to the insulating substrate plane 101' (z-axis direction), a current is passed to the first arm (x-axis direction), and a voltage collected from both ends of the second arm is a voltage output by the conductor (y-axis direction). As shown in fig. 3, the abnormal hall effect curve of any conductor is shown, wherein the horizontal axis represents the magnitude of the magnetic field and the vertical axis represents the voltage output by the conductor.
Specifically, when the working current of the conductor is a constant current I1, under the action of a vertical magnetic field with a magnetic field strength of H, the output voltage collected by the hall end (at both ends of the second arm of the multi-range magnetic sensor) is: u = S1 × H × I1; where S1 is the sensitivity of the conductor, i.e., the slope of the linear portion of the curve corresponding to each abnormal hall effect curve in fig. 3. Therefore, according to the calculation formula H = U/(S1 × I1), the value of the corresponding external magnetic field H can be calculated, and the corresponding range is ± H1; when the working current of the conductor is increased from I1 to I2, the sensitivity of the sensor is reduced from S1 to S2, and the measuring range is increased from +/-H1 to +/-H2; similarly, when the operating current of the conductor is reduced from I1 to I3, the sensitivity of the sensor is increased from S1 to S3, and the measuring range is reduced from + -H1 to + -H3. From the above principle, in order to obtain different ranges of measurement range, the current flowing through the conductor, i.e. the current density in the conductor, needs to be adjusted.
In the present embodiment, in order to make the multi-range magnetic sensor have a plurality of different magnetic field range ranges, a technical means is adopted to design a plurality of conductors with different sizes. It can be understood that when a constant current of the same magnitude is applied to each conductor in the multi-range magnetic sensor, the current density in each conductor is different due to the different sizes of the conductors, and thus the abnormal hall effect curve is generated when the conductors correspond to different ranges of magnetic field. It can be understood that the abnormal hall effect curves corresponding to each conductor under the same constant current are different, in this case, for any conductor, after the magnitude of the applied constant current is known, the sensitivity (i.e. the slope of the linear partial curve) of the conductor in the abnormal hall effect curve under the constant current is obtained, and the voltage output by the conductor is obtained, and the magnetic field magnitude in the corresponding measuring range can be determined by using the formula H = U/(S1I 1).
When constant current is introduced into each conductor in a magnetic field to be measured, the size of each conductor from the head end to the tail end (the size of the first arm and the size of the second arm) in the multi-range magnetic sensor is in a decreasing trend, so that the current density in each conductor from the head end to the tail end in the multi-range magnetic sensor is in an increasing trend, and the magnetic field range corresponding to the conductor from the head end to the tail end is gradually increased.
In one embodiment, the insulating substrate layer 101 is a single crystalline insulating substrate layer.
In one embodiment, magnetically sensitive thin film layer 102 is an epitaxial single crystal thin film with a lattice mismatch of less than 3% with insulating substrate layer 101.
In one embodiment, insulating substrate layer 101 is MgAl 2 O 4 The single crystal substrate and the magnetic sensitive film layer 102 are NiCo with the thickness of 5-25 nm 2 O 4 And (3) epitaxial thin films.
In one embodiment of the present invention,the insulating substrate layer 101 is a MgO single crystal substrate, and the magnetic sensitive film layer 102 is Fe with the thickness of 15-40 nm 3 O 4 And (3) epitaxial thin films.
In one embodiment, the insulating substrate layer 101 is SrTiO 3 The single crystal substrate and the magnetic sensitive film layer 102 are La with the thickness of 6-30 nm 0.67 Sr 0.33 Mn 0.85 Ru 0.15 O 3 。
In one embodiment, the first arm of each conductor has a length of 50 to 200 μm and a width of 50 to 100 μm; the length of each conductor second arm is 10-100 μm.
In one embodiment, the heavy metal layer 103 is 5-10 nm thick Pt. The heavy metal layer 103 is used for regulating and controlling the magnetic anisotropy of the magnetic sensitive thin film layer 102, the heavy metal layers 103 with different thicknesses can regulate and control the sensitivity and the measuring range of the magnetic sensor, and the magnetic field to be measured is a magnetic field vertical to the surface of the tunnel junction.
Optionally, to further adjust the current density in each conductor, magnetically sensitive thin film layers 102 of different thicknesses may also be selected for each conductor. The magnetic sensitive thin film layers 102 with different thicknesses have different degrees of sensitivity to the same external magnetic field, and the abnormal hall voltage can be changed under the action of the external magnetic field (magnetic field to be measured) by using different interface effects and different degrees of sensitivity.
Based on the multi-range magnetic sensor, the present embodiment further provides a magnetic field measurement method, which can be applied in a magnetic field measurement scenario and executed by a computer device, as shown in fig. 4, where the magnetic field measurement method specifically includes:
s401, a first working current is applied to the multi-range magnetic sensor placed in a magnetic field to be measured, so that the multi-range magnetic sensor is in a magnetic field measurement mode.
In the embodiment, the multi-range magnetic sensor is used for measuring the magnetic field; the first preset current is the constant current introduced into the multi-range magnetic sensor, and the multi-range magnetic sensor can be in a magnetic field measurement mode by the first preset current.
As in the above example, a first operating current is passed between the first primary conductor first arm 109 and the fifth primary conductor first arm 113 of the multi-range magnetic sensor, such that the first operating current flows through each conductor.
It is understood that the multi-range magnetic sensor provided in the present embodiment has two modes: a magnetic field measurement mode and a magnetic field recording mode. In one implementation mode, under the condition that the first working current introduced by the multi-range magnetic sensor is greater than a preset current threshold, an abnormal Hall curve corresponding to each conductor in the multi-range magnetic sensor shows good linearity in a saturation field range, so that a magnetic field measurement function can be realized; in another implementation manner, when the first operating current of the multi-range magnetic sensor is less than or equal to the preset current threshold, the abnormal hall curve corresponding to each conductor in the multi-range magnetic sensor is in a shape of a hysteresis loop, and even after the magnetic field to be measured is removed, the measurement voltage of each conductor of the multi-range magnetic sensor is not changed, so that the magnetic recording function can be realized. For example, the predetermined current threshold may be 5 μ a.
Further, due to the influence of external environmental factors and the difference of the self process of the multi-range magnetic sensor, the critical operating currents of the two different modes may have a slight error, so the preset current threshold may further include a first preset current threshold and a second preset current threshold, wherein the first preset current threshold may be greater than the second preset current threshold; the multi-range magnetic sensor may operate in a magnetic field measuring mode in a case where the first operating current of the multi-range magnetic sensor is greater than the first preset current threshold, and may operate in a magnetic recording mode in a case where the first operating current of the multi-range magnetic sensor is less than or equal to the second preset current threshold.
S402, measuring the measuring voltage of the second arm of each conductor of the multi-range magnetic sensor.
Wherein, each measurement voltage is as shown in fig. 5, and is respectively: the voltage output by the second arm 104 of the first stage conductor is a first output voltage, the voltage output by the second arm 105 of the second stage conductor is a second output voltage, the voltage output by the second arm 106 of the third stage conductor is a third output voltage, the voltage output by the second arm 107 of the fourth stage conductor is a fourth output voltage, and the voltage output by the second arm 108 of the fifth stage conductor is a fifth output voltage. That is, different conductors in the same magnetic field to be measured output different voltage values (i.e., different measurement voltages) based on the same constant current.
And S403, determining the magnetic field size of the magnetic field to be measured according to each measurement voltage.
Specifically, based on the above formula H = U/(S1 × I1), the magnetic field size of the magnetic field to be measured corresponding to different measurement voltages can be determined. Alternatively, one of the magnetic field magnitudes corresponding to different measurement voltages may be selected and determined as the magnetic field magnitude of the magnetic field to be measured.
It will be appreciated that ideally the magnitude of the magnetic field measured by all conductors within the same multi-range magnetic sensor should be the same, but in practice the following may exist: 1. the magnetic field measured by the conductor exceeds the measuring range; 2. the magnetic field measured by the conductor is far lower than the measuring range; 3. the output magnetic field precision is different according to the size of the magnetic field measured by other different conductors in the measuring range. It can be known that, in general, when the output of the meter is expected to be close to the full range during the test, the relative measurement accuracy may be higher, therefore, when one of the magnetic field magnitudes corresponding to different measurement voltages is selected to be determined as the magnetic field magnitude of the magnetic field to be measured, as shown in fig. 6, the following process may be specifically included:
s601, comparing each measured voltage with a reference voltage.
The reference voltage is half of the saturation voltage output by the multi-range magnetic sensor in the saturation magnetic field; the saturation voltage is the Hall voltage measured when the multi-range magnetic sensor applies a saturation magnetic field, and is the result of direct measurement under a large magnetic field.
In this embodiment, the reference voltage is set to half the saturation voltage in order to screen out (remove) magnetic field measurements that are over-range or much less than range from the reference voltage.
And S602, determining a second arm corresponding to the measurement voltage with the minimum difference value with the reference voltage, and taking the second arm as a target arm.
Specifically, the measurement voltage with a smaller difference value with the reference voltage indicates that the induced magnetic field corresponding to the measurement voltage is at least close to a half of the corresponding range; furthermore, the measurement voltage with a small difference value with the reference voltage shows that the induced magnetic field corresponding to the measurement voltage is more accurate than other magnetic fields, and therefore, the measurement voltage can be used as the target arm.
S603, determining the magnetic field size of the magnetic field to be measured according to the measurement voltage of the target arm.
Exemplarily, assuming that the range of the second-stage conductor is [ -1000gs,1000gs ], the magnetic field magnitude of the magnetic field to be measured calculated based on the second-stage conductor is 100Gs; the measuring range of the first-stage conductor is [ -200Gs,200Gs ], the magnetic field size of the magnetic field to be measured calculated based on the first-stage conductor is 100.1Gs, and then the second arm of the first-stage conductor is used as a target arm, and the measuring result of the first-stage conductor is used as the standard.
From the above, when the multi-range magnetic sensor is configured to operate under a magnetic recording model, the method may specifically include the following processes:
and S701, applying a second working current to the multi-range magnetic sensor placed in the magnetic field to be measured so that a conductor at the head end in the multi-range magnetic sensor is in a magnetic field recording mode.
The second working current is smaller than the first working current and smaller than the second preset current threshold.
S702, the recording voltage of the second arm of the conductor at the head end in the multirange magnetic sensor is measured.
Since the magnetic field direction can be determined by measuring the magnetic field measurement result based on one of the conductors, the conductor located at the head end of the multi-range magnetic sensor is selected in this embodiment.
And S703, recording the magnetic field direction of the magnetic field to be measured according to the recording voltage and the abnormal Hall effect curve of the conductor positioned at the head end in the multi-range magnetic sensor.
Specifically, the direction of the recording voltage is determined according to the recording voltage and the corresponding hysteresis loop area in the corresponding abnormal hall curve when the conductor is under the second working current, and the magnetic field direction of the magnetic field to be measured is recorded.
It should be understood that, although the steps in the flowcharts related to the above embodiments are shown in sequence as indicated by the arrows, the steps are not necessarily performed in sequence as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least a part of the steps in the flowcharts related to the above embodiments may include multiple steps or multiple stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of performing the steps or stages is not necessarily sequential, but may be performed alternately or alternately with other steps or at least a part of the steps or stages in other steps.
Based on the same inventive concept, the embodiment of the present application further provides a magnetic field measurement apparatus for implementing the above-mentioned magnetic field measurement method. The solution of the problem provided by the device is similar to the solution described in the above method, so the specific limitations in one or more embodiments of the magnetic field measurement device provided below can be referred to the limitations of the above magnetic field measurement method, and are not described herein again.
In one embodiment, as shown in fig. 8, there is provided a magnetic field measuring device 1 including: test module 11, detection module 12 and calculation module 13, wherein:
the testing module 11 is used for applying a first working current to the multi-range magnetic sensor placed in a magnetic field to be measured so as to enable the multi-range magnetic sensor to be in a magnetic field measuring mode; wherein, the multi-range sensor is the multi-range sensor;
the detection module 12 is used for measuring the measurement voltage of the second arm of each conductor of the multi-range magnetic sensor;
and the calculation module 13 is configured to determine the magnetic field size of the magnetic field to be measured according to each measurement voltage.
The modules in the magnetic field measuring device can be wholly or partially realized by software, hardware and a combination thereof. The modules can be embedded in a hardware form or independent of a processor in the computer device, and can also be stored in a memory in the computer device in a software form, so that the processor can call and execute operations corresponding to the modules.
In one embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be as shown in fig. 9. The computer device includes a processor, a memory, a communication interface, a display screen, and an input device connected by a system bus. Wherein the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device comprises a nonvolatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of an operating system and computer programs in the non-volatile storage medium. The communication interface of the computer device is used for communicating with an external terminal in a wired or wireless manner, and the wireless manner can be realized through WIFI, a mobile cellular network, NFC (near field communication) or other technologies. The computer program is executed by a processor to implement a magnetic field measurement method. The display screen of the computer equipment can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer equipment can be a touch layer covered on the display screen, a key, a track ball or a touch pad arranged on the shell of the computer equipment, an external keyboard, a touch pad or a mouse and the like.
It will be appreciated by those skilled in the art that the configuration shown in fig. 9 is a block diagram of only a portion of the configuration associated with the present application, and is not intended to limit the computing device to which the present application may be applied, and that a particular computing device may include more or fewer components than shown, or may combine certain components, or have a different arrangement of components.
In one embodiment, a computer device is provided, comprising a memory and a processor, the memory having a computer program stored therein, the processor implementing the following steps when executing the computer program:
the first arms of the conductors are connected end to end, and the size of the first arms of the conductors is gradually reduced from the head end to the tail end; the second arms of the conductors are parallel to each other, and the size of the second arm of each conductor is gradually reduced from the head end to the tail end;
each conductor comprises a heavy metal layer, a magnetic sensitive thin film layer and an insulating substrate layer, wherein the heavy metal layer is positioned on the upper surface of the magnetic sensitive thin film layer, and the magnetic sensitive thin film layer is positioned on the upper surface of the insulating substrate layer.
In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored which, when executed by a processor, performs the steps of:
the first arms of the conductors are connected end to end, and the size of the first arms of the conductors is gradually reduced from the head end to the tail end; the second arms of the conductors are parallel to each other, and the size of the second arm of each conductor is gradually reduced from the head end to the tail end;
each conductor comprises a heavy metal layer, a magnetic sensitive film layer and an insulating substrate layer, wherein the heavy metal layer is positioned on the upper surface of the magnetic sensitive film layer, and the magnetic sensitive film layer is arranged on the upper surface of the insulating substrate layer.
It will be understood by those skilled in the art that all or part of the processes of the methods of the embodiments described above can be implemented by hardware instructions of a computer program, which can be stored in a non-volatile computer-readable storage medium, and when executed, can include the processes of the embodiments of the methods described above. Any reference to memory, database, or other medium used in the embodiments provided herein may include at least one of non-volatile and volatile memory. The nonvolatile Memory may include Read-Only Memory (ROM), magnetic tape, floppy disk, flash Memory, optical Memory, high-density embedded nonvolatile Memory, resistive Random Access Memory (ReRAM), magnetic Random Access Memory (MRAM), ferroelectric Random Access Memory (FRAM), phase Change Memory (PCM), graphene Memory, and the like. Volatile Memory can include Random Access Memory (RAM), external cache Memory, and the like. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM), among others. The databases involved in the embodiments provided herein may include at least one of relational and non-relational databases. The non-relational database may include, but is not limited to, a block chain based distributed database, and the like. The processors referred to in the embodiments provided herein may be general purpose processors, central processing units, graphics processors, digital signal processors, programmable logic devices, quantum computing based data processing logic devices, etc., without limitation.
This example provides a conductor preparation method, as shown in fig. 10, where the conductor is used to construct the above-mentioned multi-range magnetic sensor, the method including:
s1001, preparing the magnetic sensitive film layer on the insulating substrate layer by adopting a magnetron sputtering or pulse laser deposition method.
S1002, preparing a heavy metal layer on the magnetic sensitive film layer.
S1003, protecting the cross structure patterns of the first arm and the second arm of each conductor by adopting a standard photoetching process, and removing the other unprotected magnetic induction thin film layers and heavy metal layers by using a wet etching method.
And S1004, obtaining an electrode pattern structure by adopting a photoetching alignment process, and respectively plating and etching the electrode pattern structure at two ends of the second arm of each conductor.
Wherein, the electrode pattern structure can be an Au, pt, cu or Al electrode pattern structure with the thickness of 20-50 nm.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present application. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present application shall be subject to the appended claims.
Claims (12)
1. A multi-range magnetic sensor comprising a plurality of conductors, each conductor comprising a first arm and a second arm in a cruciform configuration;
the first arms of the conductors are connected end to end, and the size of the first arms of the conductors is gradually reduced from the head end to the tail end; the second arms of the conductors are parallel to each other, and the size of the second arm of each conductor is gradually reduced from the head end to the tail end;
each conductor comprises a heavy metal layer, a magnetic sensitive film layer and an insulating substrate layer, wherein the heavy metal layer is located on the upper surface of the magnetic sensitive film layer, and the magnetic sensitive film layer is arranged on the upper surface of the insulating substrate layer.
2. The multirange magnetic sensor of claim 1, wherein the insulating substrate layer is a single crystal insulating substrate layer.
3. The multi-range magnetic sensor of claim 2, wherein the magnetically sensitive thin film layer is an epitaxial single crystal thin film having a lattice mismatch with the insulating substrate layer of less than 3%.
4. The multirange magnetic sensor of claim 3, wherein the insulating substrate layer is MgAl 2 O 4 A single crystal substrate, wherein the magnetic sensitive film layer is NiCo with the thickness of 5-25 nm 2 O 4 And (3) epitaxial thin films.
5. The multirange magnetic sensor of claim 3, wherein the insulating substrate layer is a MgO single crystal substrate, and the magnetically sensitive thin film layer is Fe with a thickness of 15-40 nm 3 O 4 And (3) epitaxial thin films.
6. The multi-range magnetic sensor of claim 3, wherein the insulating substrate layer is SrTiO 3 The magnetic sensitive film layer is La with the thickness of 6-30 nm 0.67 Sr 0.33 Mn 0.85 Ru 0.15 O 3 。
7. The multirange magnetic sensor of claim 1, wherein the first arm of each conductor has a length of 50 to 200 μ ι η and a width of 50 to 100 μ ι η; the length of each conductor second arm is 10-100 mu m.
8. A magnetic field measurement method, characterized in that the method comprises:
applying a first working current to a multi-range magnetic sensor placed in a magnetic field to be measured so that the multi-range magnetic sensor is in a magnetic field measurement mode; wherein the multi-range sensor is the multi-range sensor of any one of claims 1 to 7;
measuring a measurement voltage of a second arm of each conductor of the multi-range magnetic sensor;
and determining the magnetic field size of the magnetic field to be measured according to each measurement voltage.
9. The method according to claim 8, wherein the determining the magnetic field magnitude of the magnetic field to be measured from each measurement voltage comprises:
comparing each measured voltage with a reference voltage; wherein the reference voltage is half of a saturation voltage output by the multi-range magnetic sensor in a saturation magnetic field;
determining a second arm corresponding to the measurement voltage with the minimum difference value with the reference voltage, and taking the second arm as a target arm;
and determining the magnetic field size of the magnetic field to be measured according to the measuring voltage of the target arm.
10. The method according to claim 9, wherein determining the magnetic field magnitude of the magnetic field to be measured from the measured voltage of the target arm comprises:
determining the magnetic field size of the magnetic field to be measured in the corresponding measuring range based on the sensitivity of the conductor corresponding to the target arm, the first working current and the measuring voltage of the target arm;
and determining the magnetic field size of the magnetic field to be measured in the corresponding measuring range as the magnetic field size of the magnetic field to be measured.
11. The method of claim 8, further comprising:
applying a second working current to the multi-range magnetic sensor placed in the magnetic field to be measured, so that a conductor at the head end in the multi-range magnetic sensor is in a magnetic field recording mode; wherein the second operating current is less than the first operating current;
measuring a recording voltage of a second arm of a conductor located at the head end in the multi-range magnetic sensor;
and recording the magnetic field direction of the magnetic field to be measured according to the recording voltage and the abnormal Hall effect curve of the conductor positioned at the head end in the multi-range magnetic sensor.
12. A conductor preparation method for constructing the multi-range magnetic sensor according to any one of claims 1 to 7, comprising:
preparing a magnetic sensitive film layer on the insulating substrate layer by adopting a magnetron sputtering or pulse laser deposition method;
preparing a heavy metal layer on the magnetic sensitive thin film layer;
protecting the cross structure patterns of the first arm and the second arm of each conductor by adopting a standard photoetching process, and removing the other unprotected magnetic induction thin film layers and the heavy metal layer by using a wet etching method;
and obtaining an electrode pattern structure by adopting a photoetching alignment process, and respectively plating and etching the electrode pattern structure at two ends of the second arm of each conductor.
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