CN115963437B - Multi-range magnetic sensor, magnetic field measuring method and conductor preparation method - Google Patents
Multi-range magnetic sensor, magnetic field measuring method and conductor preparation method Download PDFInfo
- Publication number
- CN115963437B CN115963437B CN202211646208.1A CN202211646208A CN115963437B CN 115963437 B CN115963437 B CN 115963437B CN 202211646208 A CN202211646208 A CN 202211646208A CN 115963437 B CN115963437 B CN 115963437B
- Authority
- CN
- China
- Prior art keywords
- magnetic field
- conductor
- range
- arm
- magnetic sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The application relates to the technical field of magnetic field measurement, in particular to a multi-range magnetic sensor, a magnetic field measurement method and a conductor preparation method. The multi-range magnetic sensor includes a plurality of conductors, each conductor including a first arm and a second arm in a cross-shaped configuration; the first arms of the conductors are connected end to end, and the sizes of the first arms of the conductors are gradually decreased from the head end to the tail end; the second arms of the conductors are parallel to each other, and the sizes of the second arms of the conductors decrease from the head end to the tail end in sequence; each conductor comprises a heavy metal layer, a magnetic sensitive film layer and an insulating substrate layer, wherein the heavy metal layer is positioned on the upper surface of the magnetic sensitive film layer, and the magnetic sensitive film layer is positioned on the upper surface of the insulating substrate layer. The present application provides a magnetic sensor capable of providing different range of ranges.
Description
Technical Field
The application relates to the technical field of magnetic field measurement, in particular to a multi-range magnetic sensor, a magnetic field measurement method and a conductor preparation method.
Background
The magnetic sensor is a device for inducing a magnetic field change and converting the change into an electric signal, and is widely applied to various fields such as automobile industry, smart grids, geological exploration, biomedical treatment and the like. A magnetic sensor is a device that induces a magnetic field change and converts the change into an electrical signal.
At present, a plurality of magnetic sensors of different types exist, and each magnetic sensor can independently realize magnetic field measurement in different range, however, in order to realize full coverage of magnetic field detection due to wider magnetic field coverage in some fields, a plurality of magnetic sensors in different range are often required to be combined to realize the detection requirement of full coverage.
However, since there is a difference between different types of magnetic sensors, there is a compatibility problem in assembling a plurality of magnetic sensors to realize full coverage detection, and thus, improvement is demanded.
Disclosure of Invention
In view of the foregoing, it is desirable to provide a multi-range magnetic sensor, a magnetic field measurement method, and a conductor preparation method capable of providing different range ranges.
In a first aspect, the present application provides a multi-range magnetic sensor comprising a plurality of conductors, each conductor comprising a first arm and a second arm in a cross-shaped configuration;
the first arms of the conductors are connected end to end, and the sizes of the first arms of the conductors are gradually decreased from the head end to the tail end; the second arms of the conductors are parallel to each other, and the sizes of the second arms of the conductors decrease from the head end to the tail end in sequence;
each conductor comprises a heavy metal layer, a magnetic sensitive film layer and an insulating substrate layer, wherein the heavy metal layer is positioned on the upper surface of the magnetic sensitive film layer, and the magnetic sensitive film layer is positioned on the upper surface of the insulating substrate layer.
In one embodiment, the insulating substrate layer is a monocrystalline insulating substrate layer.
In one embodiment, the magnetically sensitive thin film layer is an epitaxial monocrystalline thin film having a lattice mismatch with the insulating substrate layer of less than 3%.
In one embodiment, the insulating substrate layer is MgAl 2 O 4 Monocrystalline substrate, magnetically sensitive film layer of 5-25 nm thick NiCo 2 O 4 An epitaxial thin film.
In one embodiment, the insulating substrate layer is MgO single crystal substrate, and the magnetically sensitive film layer is 15-40 nm thick Fe 3 O 4 An epitaxial thin film.
In one embodiment, the insulating substrate layer is SrTiO 3 Monocrystalline substrate, magnetic sensitive film layer is La with thickness of 6-30 nm 0.67 Sr 0.33 Mn 0.85 Ru 0.15 O 3 。
In one embodiment, the first arm of each conductor has a length of 50 to 200 μm and a width of 50 to 100 μm; the second arm of each conductor has a length of 10 to 100 μm.
In a second aspect, the present application provides a method of magnetic field measurement, the method comprising:
applying a first operating current to a multi-range magnetic sensor placed in a magnetic field to be measured such that the multi-range magnetic sensor is in a magnetic field measurement mode; wherein the multi-range sensor is the multi-range sensor;
measuring a measured voltage of a second arm of each conductor of the multi-range magnetic sensor;
and determining the magnetic field size of the magnetic field to be measured according to each measuring voltage.
In one embodiment, determining the magnetic field magnitude of the magnetic field to be measured from each measurement voltage includes:
comparing each measured voltage with a reference voltage; the reference voltage is half of the saturation voltage output by the multi-range magnetic sensor in the saturation magnetic field;
determining a second arm corresponding to the measurement voltage with the smallest difference value between the reference voltages, and taking the second arm as a target arm;
and determining the magnetic field size of the magnetic field to be measured according to the measured voltage of the target arm.
In one embodiment, determining the magnetic field magnitude of the magnetic field to be measured from the measured voltage of the target arm includes:
determining the magnetic field size of the magnetic field to be measured in a corresponding measuring range based on the sensitivity of the target arm corresponding to the conductor, the first working current and the measuring voltage of the target arm;
and determining the magnetic field size of the magnetic field to be measured in the corresponding measuring range as the magnetic field size of the magnetic field to be measured.
In one embodiment, the magnetic field measurement method further comprises: applying a second working current to a multi-range magnetic sensor placed in a magnetic field to be measured, so that a conductor positioned at the head end in the multi-range magnetic sensor is in a magnetic field recording mode; wherein the second operating current is less than the first operating current;
measuring the recorded voltage of a second arm of the conductor positioned at the head end in the multi-range magnetic sensor;
recording the magnetic field direction of the magnetic field to be measured according to the recording voltage and the abnormal Hall effect curve of the conductor positioned at the head end in the multi-range magnetic sensor.
In a third aspect, the present application also provides a magnetic field measurement apparatus, the apparatus comprising:
the testing module is used for applying a first working current to the multi-range magnetic sensor arranged in the magnetic field to be measured so that the multi-range magnetic sensor is in a magnetic field measurement mode; wherein the multi-range sensor is the multi-range sensor;
the detection module is used for measuring the measurement voltage of the second arm of each conductor of the multi-range magnetic sensor;
and the calculation module is used for determining the magnetic field size of the magnetic field to be measured according to each measurement voltage.
In a fourth aspect, the present application also provides a computer device comprising a memory and a processor, the memory storing a computer program, the processor executing the computer program to perform the steps of:
applying a first operating current to a multi-range magnetic sensor placed in a magnetic field to be measured such that the multi-range magnetic sensor is in a magnetic field measurement mode; wherein the multi-range sensor is the multi-range sensor;
measuring a measured voltage of a second arm of each conductor of the multi-range magnetic sensor;
and determining the magnetic field size of the magnetic field to be measured according to each measuring voltage.
In a fifth aspect, the present application also provides a computer readable storage medium having stored thereon a computer program which when executed by a processor performs the steps of:
applying a first operating current to a multi-range magnetic sensor placed in a magnetic field to be measured such that the multi-range magnetic sensor is in a magnetic field measurement mode; wherein the multi-range sensor is the multi-range sensor;
measuring a measured voltage of a second arm of each conductor of the multi-range magnetic sensor;
and determining the magnetic field size of the magnetic field to be measured according to each measuring voltage.
In a sixth aspect, the present application also provides a method for preparing a conductor for use in constructing an upper multiscale magnetic sensor, the method comprising:
preparing a magnetic sensitive film layer on the insulating substrate layer by adopting a magnetron sputtering or pulse laser deposition method;
preparing a heavy metal layer on the magnetically sensitive film layer;
the cross structure pattern of the first arm and the second arm of each conductor is protected by adopting a standard photoetching process, and the rest unprotected magnetic induction film layer and the heavy metal layer are removed by adopting a wet etching method;
and (3) adopting a photoetching alignment process to obtain electrode pattern structures, and respectively plating and engraving the electrode pattern structures at two ends of the second arm of each conductor.
According to the multi-range magnetic sensor, the magnetic field measuring method and the conductor preparation method, when constant current is introduced into each conductor in a magnetic field to be measured, the sizes of the conductors (the size of the first arm and the size of the second arm) from the head end to the tail end in the multi-range magnetic sensor are in a decreasing trend, so that the current density in each conductor from the head end to the tail end in the multi-range magnetic sensor is in an increasing trend, the magnetic field range corresponding to the conductor from the head end to the tail end is gradually increased, the introduced constant current is not required to be frequently regulated, a plurality of different range ranges can be obtained, materials among the conductors are the same, the conductors are connected end to end, the difference is small, and compatibility problems do not exist.
Drawings
FIG. 1 is a schematic diagram of a multi-range magnetic sensor in one embodiment;
FIG. 2 is a schematic diagram of a conductor structure in one embodiment;
FIG. 3 is a graph illustrating abnormal Hall effect curves for any of the conductors of one embodiment;
FIG. 4 is a flow chart of a magnetic field measurement method in one embodiment;
FIG. 5 is a schematic diagram of measured voltages in one embodiment;
FIG. 6 is a flow diagram of determining a target arm in one embodiment;
FIG. 7 is a flow diagram of a method for placing a multi-range magnetic sensor in a magnetic recording mode in one embodiment;
FIG. 8 is a flow chart of a magnetic field measurement apparatus according to one embodiment;
FIG. 9 is an internal block diagram of a computer device in one embodiment;
fig. 10 is a schematic diagram of a conductor preparation flow in one embodiment.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
A magnetic sensor is a device that induces a magnetic field change and converts the change into an electrical signal. Thus, the input of the magnetic sensor is a magnetic field and the output is an electrical signal. A typical magnetic sensor is a hall sensor, and the hall effect is considered to be a phenomenon in which, in the case where a current flows in a direction passing through a magnetic field, a potential difference is generated in a direction perpendicular to both the current direction and the magnetic field direction. Further, the anomalous hall effect indicates that the lateral conductivity of a conductor material is not only related to the normal hall effect, but also includes an anomalous term related to the magnetization of the conductor material, which is constant when the conductor material reaches saturation magnetization. The magnetic sensor material prepared based on the abnormal Hall effect has the following characteristics: the abnormal Hall output curve of the magnetic sensor material passes through the origin; the method has the advantages that the method is good in linearity in a saturated field range, the abnormal Hall output curve is obviously changed along with the change of an external magnetic field, and the method is high in sensitivity, wherein the sensitivity is the slope of the abnormal Hall output curve in a measuring range.
At present, higher requirements are put forward on the integration level and the multifunctional characteristics of the magnetic sensor, especially on the magnetic field detection range, in order to realize the full coverage of magnetic field detection in certain fields, for the existing magnetic sensor with only one range, a plurality of magnetic sensors with different range are often required to be combined to meet the full coverage magnetic field measurement requirement. However, due to possible technical differences between the magnetic sensors of different ranges, there are problems of assembly compatibility and miniaturization integration of the assembled magnetic sensors when assembling the magnetic sensors of different ranges.
The embodiment provides a multi-range magnetic sensor, which comprises a plurality of conductors, wherein each conductor comprises a first arm and a second arm which are in a cross-shaped structure; the first arms of the conductors are connected end to end, and the sizes of the first arms of the conductors are gradually decreased from the head end to the tail end; the second arms of the conductors are parallel to each other, and the second arms of the conductors decrease in size from the head end to the tail end.
As shown in fig. 1, the multi-range magnetic sensor is composed of a 5-level cross-shaped conductor, wherein the conductor at the head end is used as a first-level conductor, and the rest is used as a second-level conductor, a third-level conductor, a fourth-level conductor and a fifth-level conductor in sequence; the second arms of each stage of conductor are respectively a second arm 104 of the first stage of conductor, a second arm 105 of the second stage of conductor, a second arm 106 of the third stage of conductor, a second arm 107 of the fourth stage of conductor and a second arm 108 of the fifth stage of conductor; the first arms of each stage of conductors are first arm 109 of the first stage of conductors, first arm 110 of the second stage of conductors, first arm 111 of the third stage of conductors, first arm 112 of the fourth stage of conductors and first arm 113 of the fifth stage of conductors, respectively.
Wherein the width of the second arm 104 of the first level conductor is greater than the width of the second arm 105 of the second level conductor, the width of the second arm 105 of the second level conductor is greater than the width of the second arm 106 of the third level conductor, the width of the second arm 106 of the third level conductor is greater than the width of the second arm 107 of the fourth level conductor, and the width of the second arm 107 of the fourth level conductor is greater than the width of the second arm 108 of the fifth level conductor. The width of the first arm 113 of the fifth level conductor is less than half the width of the first arm 112 of the fourth level conductor, the width of the first arm 112 of the fourth level conductor is less than half the width of the first arm 111 of the third level conductor, the width of the first arm 111 of the third level conductor is less than half the width of the first arm 110 of the second level conductor, and the width of the first arm 110 of the second level conductor is less than half the width of the first arm 109 of the first level conductor.
Alternatively, as shown in fig. 2, each conductor includes a heavy metal layer 103, a magnetically sensitive thin film layer 102, and an insulating substrate layer 101, where the heavy metal layer 103 is located on the upper surface of the magnetically sensitive thin film layer 102, and the magnetically sensitive thin film layer 102 is located on the upper surface of the insulating substrate layer 101. To package the individual conductors within the multi-scale magnetic sensor, the insulating substrate layers 101 of the individual conductors are connected to form one insulating substrate layer 101 plane, i.e. the insulating substrate plane 101' in fig. 1.
Further, as is known from the characteristics of the abnormal hall curve, for each of the above conductors, the magnetic field range corresponding to the conductor is related to the sensitivity of the conductor itself, and the sensitivity of the conductor is related to the magnitude of the current density passing through the conductor, the larger the current density is, the lower the sensitivity is, whereas the smaller the current density is, the higher the sensitivity is.
Illustratively, any of the conductors in this embodiment includes a first arm and a second arm perpendicular to each other, the magnetic field direction of the magnetic field to be measured is a direction perpendicular to the plane 101' of the insulating substrate (z-axis direction), a current is supplied to the first arm (x-axis direction), and voltages collected from both ends of the second arm, that is, voltages output from the conductors (y-axis direction). As shown in fig. 3, any of the abnormal hall effect curves of the conductor is shown, wherein the horizontal axis represents the magnitude of the magnetic field and the vertical axis represents the voltage output by the conductor.
Specifically, when the working current of the conductor is a constant current I1, under the action of a vertical magnetic field with a magnetic field strength of H, the output voltage collected by the hall end (two ends of the second arm of the multi-range magnetic sensor) is as follows: u=s1×h×i1; where S1 is the sensitivity of the conductor, i.e., the slope of the linear portion curve corresponding to each anomalous hall effect curve in fig. 3. Therefore, according to the calculation formula h=u/(S1×i1), the corresponding value of the external magnetic field H can be calculated, and the corresponding range thereof is ±h1; when the working current of the conductor is increased from I1 to I2, the sensitivity of the sensor is reduced from S1 to S2, and the measuring range is increased from +/-H1 to +/-H2; similarly, when the operating current of the conductor decreases from I1 to I3, the sensitivity of the sensor increases from S1 to S3 and the range decreases from ±h1 to ±h3. From the above principle, it is necessary to adjust the magnitude of the current flowing through the conductor, i.e. the current density in the conductor, in order to obtain different measuring ranges.
In this embodiment, in order to make the multi-scale magnetic sensor have a plurality of different magnetic field scale ranges, a technical means is to design a plurality of conductors of different sizes. It will be appreciated that when a constant current of the same magnitude is applied to each conductor in a multi-range magnetic sensor, the current density within each conductor is different due to the different dimensions of the conductors, which in turn causes the conductors to have different corresponding magnetic field ranges, anomalous hall effect curves. It will be appreciated that the abnormal hall effect curves corresponding to each conductor under the same constant current are also different, in this case, for any conductor, after knowing the magnitude of the constant current, the sensitivity (i.e. the slope of the linear portion curve) of the conductor in the abnormal hall effect curve under the constant current is obtained, and the voltage output by the conductor is obtained, and the magnitude of the magnetic field in the corresponding measuring range can be determined by using the formula h=u/(s1×i1).
According to the multi-range magnetic sensor, when constant current is introduced into each conductor in a magnetic field to be measured, the sizes of the conductors (the size of the first arm and the size of the second arm) from the head end to the tail end in the multi-range magnetic sensor are in a decreasing trend, so that the current density in the conductors from the head end to the tail end in the multi-range magnetic sensor is in an increasing trend, the range of the magnetic field range corresponding to the conductors from the head end to the tail end is gradually increased, the introduced constant current is not required to be frequently adjusted, a plurality of different range ranges can be obtained, materials among the conductors are identical, the conductors are connected end to end, the difference is small, and compatibility problems do not exist.
In one embodiment, the insulating substrate layer 101 is a single crystal insulating substrate layer.
In one embodiment, magnetically sensitive thin film layer 102 is an epitaxial monocrystalline film having a lattice mismatch with insulating substrate layer 101 of less than 3%.
In one embodiment, the insulating substrate layer 101 is MgAl 2 O 4 Monocrystalline substrate, magnetically sensitive film layer 102 is 5-25 nm thick NiCo 2 O 4 An epitaxial thin film.
In one embodiment, the insulating substrate layer 101 is a MgO single crystal substrate and the magnetically sensitive thin film layer 102 is 15-40 nm thick Fe 3 O 4 An epitaxial thin film.
In one embodiment, the insulating substrate layer 101 is SrTiO 3 Monocrystalline substrate, magnetically sensitive film layer 102 is La with thickness of 6-30 nm 0.67 Sr 0.33 Mn 0.85 Ru 0.15 O 3 。
In one embodiment, the first arm of each conductor has a length of 50 to 200 μm and a width of 50 to 100 μm; the second arm of each conductor has a length of 10 to 100 μm.
In one embodiment, heavy metal layer 103 is Pt 5-10 nm thick. The heavy metal layer 103 is used for regulating and controlling magnetic anisotropy energy of the magnetically sensitive thin film layer 102, and the heavy metal layers 103 with different thicknesses can regulate and control sensitivity and measuring range of the magnetic sensor, and a magnetic field to be measured is a magnetic field perpendicular to the surface of the tunnel junction.
Alternatively, to further adjust the current density within each conductor, a different thickness of magnetically sensitive thin film layer 102 may also be selected for each conductor. The magnetically sensitive thin film layers 102 with different thicknesses have different degrees of sensitivity to the same external magnetic field, and abnormal hall voltages can be changed under the action of the external magnetic field (magnetic field to be measured) by utilizing different interface effects and different degrees of sensitivity.
Based on the multi-range magnetic sensor, the present embodiment further provides a magnetic field measurement method, where the magnetic field measurement method may be applied to a scenario of magnetic field measurement and executed by a computer device, as shown in fig. 4, and the magnetic field measurement method may specifically include:
s401, applying a first operating current to the multi-range magnetic sensor placed in the magnetic field to be measured, so that the multi-range magnetic sensor is in the magnetic field measurement mode.
The embodiment utilizes the multi-range magnetic sensor to measure the magnetic field; the first preset current is the constant current which is introduced into the multi-range magnetic sensor, and the first preset current can enable the multi-range magnetic sensor to be in a magnetic field measurement mode.
As exemplified above, the first operating current is passed between the first stage conductor first arm 109 and the fifth stage conductor first arm 113 located in the multi-range magnetic sensor such that the first operating current flows through the respective conductors.
It can be appreciated that the multi-range magnetic sensor provided in this embodiment has two modes: a magnetic field measurement mode and a magnetic field recording mode. In one implementation manner, when the first working current fed by the multi-range magnetic sensor is larger than a preset current threshold value, an abnormal Hall curve corresponding to each conductor in the multi-range magnetic sensor shows good linearity in a saturated field range, so that a magnetic field measurement function can be realized; in another implementation manner, when the first working current of the multi-range magnetic sensor is smaller than or equal to the preset current threshold, the abnormal hall curves corresponding to the conductors in the multi-range magnetic sensor are in the shape of hysteresis loops, and the measured voltage of each conductor of the multi-range magnetic sensor is unchanged even if the magnetic field to be measured is removed, so that the magnetic recording function can be realized. The preset current threshold may be, for example, 5 μΑ.
Further, due to the influence of external environmental factors and the difference of the self-processes of the multi-range magnetic sensor, the critical working currents in the two different modes may have small errors, so the preset current threshold value may further include a first preset current threshold value and a second preset current threshold value, where the first preset current threshold value may be greater than the second preset current threshold value; the multi-range magnetic sensor may operate in a magnetic field measurement mode if the first operating current of the multi-range magnetic sensor is greater than the first preset current threshold, and in a magnetic recording mode if the first operating current of the multi-range magnetic sensor is less than or equal to the second preset current threshold.
S402, measuring the measured voltage of the second arm of each conductor of the multi-range magnetic sensor.
The measured voltages are shown in fig. 5, and are respectively: the voltage output by the second arm 104 of the first-stage conductor is a first output voltage, the voltage output by the second arm 105 of the second-stage conductor is a second output voltage, the voltage output by the second arm 106 of the third-stage conductor is a third output voltage, the voltage output by the second arm 107 of the fourth-stage conductor is a fourth output voltage, and the voltage output by the second arm 108 of the fifth-stage conductor is a fifth output voltage. That is, different conductors output different voltage values (i.e., different measurement voltages) based on the same constant current in the same magnetic field to be measured.
S403, determining the magnetic field size of the magnetic field to be measured according to each measuring voltage.
Specifically, based on the above formula h=u/(S1×i1), the magnetic field magnitude of the magnetic field to be measured corresponding to different measurement voltages can be determined. Alternatively, one of the magnetic field magnitudes corresponding to the different measurement voltages may be selected, and the magnetic field magnitude of the magnetic field to be measured may be determined.
It will be appreciated that the magnetic field measured by all conductors in the same multiscale magnetic sensor should ideally be the same, but in practice the following will be the case: 1. the magnitude of the magnetic field measured by the conductor exceeds the measuring range; 2. the magnitude of the magnetic field measured by the conductor is far below the measuring range; 3. the magnetic field measured by other different conductors in the measuring range has different output magnetic field precision. As can be seen, in general, when the instrument is tested, the output is expected to be close to the full scale range, and the relative measurement accuracy is higher, so in the embodiment of the application, when one of the magnetic field magnitudes corresponding to different measurement voltages is selected, the magnetic field magnitude of the magnetic field to be measured is determined, as shown in fig. 6, the method specifically comprises the following steps:
s601, each measured voltage is compared with a reference voltage.
The reference voltage is half of the saturation voltage output by the multi-range magnetic sensor in the saturation magnetic field; the saturation voltage is the Hall voltage measured when the multi-range magnetic sensor applies a saturation magnetic field or above, is the result of direct measurement under a large magnetic field, and is basically consistent under the saturation magnetic field, and has a small gap.
In this embodiment, the reference voltage is set to half the saturation voltage in order to screen out (remove) the magnetic field measurement results that are over-range or much smaller than the range by the reference voltage.
S602, determining a second arm corresponding to the measurement voltage with the smallest difference value between the reference voltages, and taking the second arm as a target arm.
Specifically, a measurement voltage with a smaller difference value from the reference voltage indicates that the induction magnetic field corresponding to the measurement voltage is at least close to half of the corresponding measuring range; further, the measurement voltage with a smaller difference from the reference voltage indicates that the induced magnetic field corresponding to the measurement voltage is more accurate than other magnetic fields, and thus can be used as the target arm.
S603, determining the magnetic field size of the magnetic field to be measured according to the measured voltage of the target arm.
By way of example, assuming that the span of the second-stage conductor is [ -1000Gs,1000Gs ], the magnitude of the magnetic field to be measured calculated based on the second-stage conductor is 100Gs; the measuring range of the first-stage conductor is [ -200Gs,200Gs ], the magnetic field size of the magnetic field to be measured calculated based on the first-stage conductor is 100.1Gs, and the second arm of the first-stage conductor is taken as a target arm and the measurement result of the first-stage conductor is taken as the reference arm.
From the above, the configuration of the multi-range magnetic sensor may specifically include the following procedures when the configuration works under the magnetic recording model:
s701, applying a second operating current to the multi-range magnetic sensor placed in the magnetic field to be measured, so that the conductor located at the head end in the multi-range magnetic sensor is in the magnetic field recording mode.
The second working current is smaller than the first working current, and the second working current is smaller than the second preset current threshold.
S702, measuring the recording voltage of a second arm of a conductor positioned at the head end in the multi-range magnetic sensor.
The magnetic field direction can be determined by measuring only the magnetic field measurement result based on one of the conductors, so that the conductor positioned at the head end of the multi-range magnetic sensor is selected in the embodiment.
S703, recording the magnetic field direction of the magnetic field to be measured according to the recording voltage and the abnormal Hall effect curve of the conductor at the head end in the multi-range magnetic sensor.
Specifically, according to the recording voltage and the corresponding hysteresis loop area in the corresponding abnormal hall curve of the conductor under the second working current, the direction of the recording voltage is determined, and the magnetic field direction of the magnetic field to be measured is recorded.
It should be understood that, although the steps in the flowcharts related to the above embodiments are sequentially shown as indicated by arrows, these steps are not necessarily sequentially performed in the order indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least some of the steps in the flowcharts described in the above embodiments may include a plurality of steps or a plurality of stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of the steps or stages is not necessarily performed sequentially, but may be performed alternately or alternately with at least some of the other steps or stages.
Based on the same inventive concept, the embodiment of the application also provides a magnetic field measuring device for realizing the above-mentioned magnetic field measuring method. The implementation of the solution provided by the device is similar to that described in the above method, so the specific limitations of one or more embodiments of the magnetic field measurement device provided below can be referred to above for the limitations of the magnetic field measurement method, and will not be repeated here.
In one embodiment, as shown in fig. 8, there is provided a magnetic field measuring apparatus 1 including: a test module 11, a detection module 12 and a calculation module 13, wherein:
a test module 11 for applying a first operating current to the multi-range magnetic sensor placed in the magnetic field to be measured so that the multi-range magnetic sensor is in a magnetic field measurement mode; wherein the multi-range sensor is the multi-range sensor;
a detection module 12 for measuring a measured voltage of the second arm of each conductor of the multi-range magnetic sensor;
the calculation module 13 is configured to determine a magnetic field size of the magnetic field to be measured according to each measurement voltage.
The respective modules in the magnetic field measuring apparatus described above may be implemented in whole or in part by software, hardware, and combinations thereof. The above modules may be embedded in hardware or may be independent of a processor in the computer device, or may be stored in software in a memory in the computer device, so that the processor may call and execute operations corresponding to the above modules.
In one embodiment, a computer device is provided, which may be a terminal, and the internal structure thereof may be as shown in fig. 9. The computer device includes a processor, a memory, a communication interface, a display screen, and an input device connected by a system bus. Wherein the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage media. The communication interface of the computer device is used for carrying out wired or wireless communication with an external terminal, and the wireless mode can be realized through WIFI, a mobile cellular network, NFC (near field communication) or other technologies. The computer program is executed by a processor to implement a magnetic field measurement method. The display screen of the computer equipment can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer equipment can be a touch layer covered on the display screen, can also be keys, a track ball or a touch pad arranged on the shell of the computer equipment, and can also be an external keyboard, a touch pad or a mouse and the like.
It will be appreciated by persons skilled in the art that the architecture shown in fig. 9 is merely a block diagram of some of the architecture relevant to the present inventive arrangements and is not limiting as to the computer device to which the present inventive arrangements are applicable, and that a particular computer device may include more or fewer components than shown, or may combine some of the components, or have a different arrangement of components.
In one embodiment, a computer device is provided comprising a memory and a processor, the memory having stored therein a computer program, the processor when executing the computer program performing the steps of:
the first arms of the conductors are connected end to end, and the sizes of the first arms of the conductors are gradually decreased from the head end to the tail end; the second arms of the conductors are parallel to each other, and the sizes of the second arms of the conductors decrease from the head end to the tail end in sequence;
each conductor comprises a heavy metal layer, a magnetic sensitive film layer and an insulating substrate layer, wherein the heavy metal layer is positioned on the upper surface of the magnetic sensitive film layer, and the magnetic sensitive film layer is positioned on the upper surface of the insulating substrate layer.
In one embodiment, a computer readable storage medium is provided having a computer program stored thereon, which when executed by a processor, performs the steps of:
the first arms of the conductors are connected end to end, and the sizes of the first arms of the conductors are gradually decreased from the head end to the tail end; the second arms of the conductors are parallel to each other, and the sizes of the second arms of the conductors decrease from the head end to the tail end in sequence;
each conductor comprises a heavy metal layer, a magnetic sensitive film layer and an insulating substrate layer, wherein the heavy metal layer is positioned on the upper surface of the magnetic sensitive film layer, and the magnetic sensitive film layer is positioned on the upper surface of the insulating substrate layer.
Those skilled in the art will appreciate that implementing all or part of the above described methods may be accomplished by way of a computer program stored on a non-transitory computer readable storage medium, which when executed, may comprise the steps of the embodiments of the methods described above. Any reference to memory, database, or other medium used in embodiments provided herein may include at least one of non-volatile and volatile memory. The nonvolatile Memory may include Read-Only Memory (ROM), magnetic tape, floppy disk, flash Memory, optical Memory, high density embedded nonvolatile Memory, resistive random access Memory (ReRAM), magnetic random access Memory (Magnetoresistive Random Access Memory, MRAM), ferroelectric Memory (Ferroelectric Random Access Memory, FRAM), phase change Memory (Phase Change Memory, PCM), graphene Memory, and the like. Volatile memory can include random access memory (Random Access Memory, RAM) or external cache memory, and the like. By way of illustration, and not limitation, RAM can be in the form of a variety of forms, such as static random access memory (Static Random Access Memory, SRAM) or dynamic random access memory (Dynamic Random Access Memory, DRAM), and the like. The databases referred to in the embodiments provided herein may include at least one of a relational database and a non-relational database. The non-relational database may include, but is not limited to, a blockchain-based distributed database, and the like. The processor referred to in the embodiments provided in the present application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic unit, a data processing logic unit based on quantum computing, or the like, but is not limited thereto.
The embodiment provides a method for preparing a conductor, as shown in fig. 10, where the conductor is used to construct the multi-range magnetic sensor, and the method includes:
s1001, preparing a magnetically sensitive film layer on the insulating substrate layer by adopting a magnetron sputtering or pulse laser deposition method.
S1002, preparing a heavy metal layer on the magnetically sensitive film layer.
And S1003, protecting the cross structure pattern of the first arm and the second arm of each conductor by adopting a standard photoetching process, and removing the rest unprotected magnetic induction film layer and the heavy metal layer by adopting a wet etching method.
S1004, adopting a photoetching alignment process to obtain electrode pattern structures, and respectively plating and engraving the electrode pattern structures at two ends of the second arm of each conductor.
The electrode pattern structure can be 20-50 nm Au, pt, cu or Al electrode pattern structure.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples illustrate only a few embodiments of the application and are described in detail herein without thereby limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of the application should be assessed as that of the appended claims.
Claims (12)
1. A multi-range magnetic sensor comprising a plurality of conductors, each conductor comprising a first arm and a second arm in a cross-shaped configuration;
the first arms of the conductors are connected end to end, the sizes of the first arms of the conductors decrease from the head end to the tail end in sequence, and the width of the first arm of each conductor is smaller than half of the width of the first arm of the last conductor adjacent to the conductor; the second arms of the conductors are parallel to each other, the size of the second arms of the conductors gradually decreases from the head end to the tail end, and the width of the second arms of each conductor is larger than that of the second arms of the next conductor adjacent to the conductor;
each conductor comprises a heavy metal layer, a magnetic sensitive film layer and an insulating substrate layer, wherein the heavy metal layer is positioned on the upper surface of the magnetic sensitive film layer, and the magnetic sensitive film layer is positioned on the upper surface of the insulating substrate layer.
2. The multi-range magnetic sensor of claim 1, wherein the insulating substrate layer is a single crystal insulating substrate layer.
3. The multi-range magnetic sensor of claim 2, wherein the magnetically sensitive thin film layer is an epitaxial single crystal thin film having a lattice mismatch with the insulating substrate layer of less than 3%.
4. A multi-range magnetic sensor as claimed in claim 3, wherein the insulating substrate layer is MgAl 2 O 4 A monocrystal substrate, wherein the magnetically sensitive film layer is NiCo with the thickness of 5-25 nm 2 O 4 An epitaxial thin film.
5. A multi-range magnetic sensor as claimed in claim 3, wherein the insulating substrate layer is a MgO single crystal substrate, and the magnetically sensitive thin film layer is 15 ° to ultra40nm thick Fe 3 O 4 An epitaxial thin film.
6. A multi-range magnetic sensor according to claim 3, wherein the insulating substrate layer is SrTiO 3 A monocrystalline substrate, wherein the magnetically sensitive film layer is La with the thickness of 6-30 nm 0.67 Sr 0.33 Mn 0.85 Ru 0.15 O 3 。
7. The multi-range magnetic sensor of claim 1, wherein the first arm of each conductor has a length of 50-200 μm and a width of 50-100 μm; the length of the second arm of each conductor is 10-100 mu m.
8. A method of magnetic field measurement, the method comprising:
applying a first operating current to a multi-range magnetic sensor placed in a magnetic field to be measured such that the multi-range magnetic sensor is in a magnetic field measurement mode; wherein the multi-range magnetic sensor is the multi-range sensor of any one of claims 1 to 7;
measuring a measured voltage of a second arm of each conductor of the multi-range magnetic sensor;
and determining the magnetic field size of the magnetic field to be measured according to each measuring voltage.
9. The method of claim 8, wherein determining the magnetic field magnitude of the magnetic field to be measured from each measurement voltage comprises:
comparing each measured voltage with a reference voltage; the reference voltage is half of the saturation voltage output by the multi-range magnetic sensor in the saturation magnetic field;
determining a second arm corresponding to a measurement voltage with the smallest difference value between the reference voltages, and taking the second arm as a target arm;
and determining the magnetic field size of the magnetic field to be measured according to the measured voltage of the target arm.
10. The method of claim 9, wherein determining the magnetic field magnitude of the magnetic field to be measured from the measured voltage of the target arm comprises:
determining the magnetic field size of the magnetic field to be measured in a corresponding measuring range based on the sensitivity of the corresponding conductor of the target arm, the first working current and the measuring voltage of the target arm;
and determining the magnetic field size of the magnetic field to be measured in the corresponding measuring range as the magnetic field size of the magnetic field to be measured.
11. The method of claim 8, wherein the method further comprises:
applying a second working current to the multi-range magnetic sensor arranged in the magnetic field to be measured, so that a conductor positioned at the head end in the multi-range magnetic sensor is in a magnetic field recording mode; wherein the second operating current is less than the first operating current;
measuring the recorded voltage of a second arm of the conductor positioned at the head end in the multi-range magnetic sensor;
and recording the magnetic field direction of the magnetic field to be measured according to the recording voltage and the abnormal Hall effect curve of the conductor positioned at the head end in the multi-range magnetic sensor.
12. A method of preparing a conductor for use in constructing a multi-scale magnetic sensor according to any one of claims 1 to 7, the method comprising:
preparing a magnetic sensitive film layer on the insulating substrate layer by adopting a magnetron sputtering or pulse laser deposition method;
preparing a heavy metal layer on the magnetically sensitive thin film layer;
adopting a standard photoetching process to protect the cross structure patterns of the first arm and the second arm of each conductor, and removing the rest unprotected magnetic sensitive film layer and the heavy metal layer by a wet etching method;
and (3) adopting a photoetching alignment process to obtain an electrode pattern structure, and respectively plating and engraving the electrode pattern structure at two ends of the second arm of each conductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211646208.1A CN115963437B (en) | 2022-12-21 | 2022-12-21 | Multi-range magnetic sensor, magnetic field measuring method and conductor preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211646208.1A CN115963437B (en) | 2022-12-21 | 2022-12-21 | Multi-range magnetic sensor, magnetic field measuring method and conductor preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115963437A CN115963437A (en) | 2023-04-14 |
| CN115963437B true CN115963437B (en) | 2023-10-20 |
Family
ID=87362597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211646208.1A Active CN115963437B (en) | 2022-12-21 | 2022-12-21 | Multi-range magnetic sensor, magnetic field measuring method and conductor preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115963437B (en) |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6366085B1 (en) * | 1997-09-11 | 2002-04-02 | Bar-Ilan University | Probe device for measuring a magnetic field vector |
| CN1394284A (en) * | 2000-10-26 | 2003-01-29 | 财团法人电气磁气材料研究所 | Thin-film magnetic field sensor |
| CN101676735A (en) * | 2008-09-18 | 2010-03-24 | 比亚迪股份有限公司 | Current sampling hall sensor device |
| CN103645449A (en) * | 2013-12-24 | 2014-03-19 | 江苏多维科技有限公司 | Single chip reference bridge type magnetic sensor for high-intensity magnetic field |
| CN107217220A (en) * | 2017-05-17 | 2017-09-29 | 渤海大学 | A kind of method of wide range magneto-impedance effect amorphous microwires between acquisition two-region |
| EP3376238A1 (en) * | 2017-03-16 | 2018-09-19 | LEM Intellectual Property SA | Electrical current transducer with magnetic field gradient sensor |
| CN109959882A (en) * | 2017-12-22 | 2019-07-02 | 北京航空航天大学青岛研究院 | Measurement Method for Magnetic Field and magnetic sensor based on the movement of neticdomain wall invertibity |
| CN110726959A (en) * | 2019-09-11 | 2020-01-24 | 杭州电子科技大学 | Magnetic field sensing device with adjustable sensitivity based on abnormal Hall effect |
| CN111244269A (en) * | 2020-03-12 | 2020-06-05 | 福州大学 | Three-dimensional topological insulator Bi2Te3Method for enhancing photoinduced abnormal Hall current |
| WO2021187347A1 (en) * | 2020-03-19 | 2021-09-23 | 国立研究開発法人物質・材料研究機構 | Vertical thermoelectric conversion element and device with thermoelectric power generation application or heat flow sensor using same |
| CN114186451A (en) * | 2021-11-18 | 2022-03-15 | 中国人民解放军国防科技大学 | Multi-range multi-sensitivity superconducting/TMR composite magnetic sensor and simulation method thereof |
| CN114487941A (en) * | 2022-04-06 | 2022-05-13 | 南方电网数字电网研究院有限公司 | Magnetic sensor, magnetic field measuring method and preparation method of magnetic sensor |
-
2022
- 2022-12-21 CN CN202211646208.1A patent/CN115963437B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6366085B1 (en) * | 1997-09-11 | 2002-04-02 | Bar-Ilan University | Probe device for measuring a magnetic field vector |
| CN1394284A (en) * | 2000-10-26 | 2003-01-29 | 财团法人电气磁气材料研究所 | Thin-film magnetic field sensor |
| CN101676735A (en) * | 2008-09-18 | 2010-03-24 | 比亚迪股份有限公司 | Current sampling hall sensor device |
| CN103645449A (en) * | 2013-12-24 | 2014-03-19 | 江苏多维科技有限公司 | Single chip reference bridge type magnetic sensor for high-intensity magnetic field |
| EP3376238A1 (en) * | 2017-03-16 | 2018-09-19 | LEM Intellectual Property SA | Electrical current transducer with magnetic field gradient sensor |
| CN107217220A (en) * | 2017-05-17 | 2017-09-29 | 渤海大学 | A kind of method of wide range magneto-impedance effect amorphous microwires between acquisition two-region |
| CN109959882A (en) * | 2017-12-22 | 2019-07-02 | 北京航空航天大学青岛研究院 | Measurement Method for Magnetic Field and magnetic sensor based on the movement of neticdomain wall invertibity |
| CN110726959A (en) * | 2019-09-11 | 2020-01-24 | 杭州电子科技大学 | Magnetic field sensing device with adjustable sensitivity based on abnormal Hall effect |
| CN111244269A (en) * | 2020-03-12 | 2020-06-05 | 福州大学 | Three-dimensional topological insulator Bi2Te3Method for enhancing photoinduced abnormal Hall current |
| WO2021187347A1 (en) * | 2020-03-19 | 2021-09-23 | 国立研究開発法人物質・材料研究機構 | Vertical thermoelectric conversion element and device with thermoelectric power generation application or heat flow sensor using same |
| CN114186451A (en) * | 2021-11-18 | 2022-03-15 | 中国人民解放军国防科技大学 | Multi-range multi-sensitivity superconducting/TMR composite magnetic sensor and simulation method thereof |
| CN114487941A (en) * | 2022-04-06 | 2022-05-13 | 南方电网数字电网研究院有限公司 | Magnetic sensor, magnetic field measuring method and preparation method of magnetic sensor |
Non-Patent Citations (2)
| Title |
|---|
| Current Tunable Anomalous Hall Effect Based on NiCo2O4 Films for Compact Magnetic Sensors;Peng Li;《IEEE ELECTRON DEVICE LETTERS》;全文 * |
| 霍尔传感器磁系统优化设计;郑剑斌;《中国优秀硕士学位论文全文数据库 信息科技辑》;全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115963437A (en) | 2023-04-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101076737B (en) | Non-linear magnetic field sensors and current sensors | |
| US10996292B2 (en) | Magnetic sensor circuits and systems and methods for forming magnetic sensor circuits | |
| US9752877B2 (en) | Electronic device having electronic compass with demagnetizing coil and annular flux concentrating yokes | |
| Deak et al. | Tunneling magnetoresistance sensor with pT level 1/f magnetic noise | |
| US9810748B2 (en) | Tunneling magneto-resistor device for sensing a magnetic field | |
| US9791523B2 (en) | Magnetic sensor utilizing magnetization reset for sense axis selection | |
| CN114487560B (en) | Wide-range current measuring method and device based on closed-loop feedback type and current sensor | |
| Schmitz et al. | Magnetometric mapping of superconducting RF cavities | |
| US9581661B2 (en) | XMR-sensor and method for manufacturing the XMR-sensor | |
| CN115963437B (en) | Multi-range magnetic sensor, magnetic field measuring method and conductor preparation method | |
| CN112363097B (en) | Magneto-resistance sensor chip | |
| JP2009124058A (en) | Method of measuring of area resistance of magnetoresistive effect element | |
| JP2020008563A (en) | Magnetic field measuring device, magnetic field measuring method, and magnetic field measuring program | |
| CN115754848A (en) | Magnetic sensor | |
| JP2020008568A (en) | Magnetic field measuring device, magnetic field measuring method, and magnetic field measuring program | |
| EP4012431A1 (en) | Magnetoresistive element for sensing a magnetic field in a z-axis | |
| US20200003846A1 (en) | Magnetic field measuring device, magnetic field measurement method, and recording medium having recorded thereon magnetic field measurement program | |
| CN108469595B (en) | Magnetic field sensing device and sensing method | |
| US20220326094A1 (en) | Heat-flow sensor | |
| US11953568B1 (en) | Wide-range perpendicular sensitive magnetic sensor and method for manufacturing the same | |
| CN115856731B (en) | Magnetic field sensor and voltage measurement method | |
| JP2002252393A (en) | Magnetic sensor | |
| JP5417968B2 (en) | Method for detecting the object to be detected | |
| Pant et al. | High-temperature anisotropic magnetoresistive (AMR) sensors | |
| JP2006253411A (en) | Magnetic sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |