CN115961255A - Film forming apparatus - Google Patents

Abstract

The invention relates to a film forming apparatus for improving convenience in measuring the film thickness of a substrate after film formation. The film forming apparatus of the present invention includes: a film forming chamber provided with a film forming unit for forming a film on a substrate; a conveying member that conveys the substrate between a film formation position of the substrate and a receiving position of the substrate while holding the substrate on a lower side; and a measuring member that measures a thickness of a film formed on the substrate held by the conveying member.

Description

Film forming apparatus

Technical Field

The present invention relates to a film deposition apparatus for measuring a film thickness of an organic material deposited on a glass substrate.

Background

As a manufacturing apparatus for an organic EL display or the like, a film deposition line including a device for transferring a substrate to a film deposition chamber and depositing the substrate is known. As an example, patent document 1 discloses a group-type film deposition apparatus in which a substrate is transported from a common transport chamber to a plurality of film deposition chambers by an articulated robot.

Patent document 2 discloses that a film thickness inspection chamber for measuring the film thickness formed on a substrate subjected to a film formation process in a film formation chamber is disposed on a film formation line.

Documents of the prior art

Patent document

Patent document 1: japanese patent laid-open publication No. 2019-192898

Patent document 2: japanese patent laid-open publication No. 2005-322612

Disclosure of Invention

Problems to be solved by the invention

However, the film thickness inspection chamber needs to be large as the substrate is large, and the problem of the large size of the whole film deposition line is caused.

In view of the above problems, an object of the present invention is to provide a technique for improving convenience in measuring the film thickness of a substrate after film formation.

Means for solving the problems

In order to solve the above problem, a film forming apparatus according to the present invention includes:

a film forming chamber provided with a film forming unit for forming a film on a substrate;

a conveying member that conveys the substrate between a film formation position of the substrate and a receiving position of the substrate while holding the substrate on a lower side; and

a measuring member that measures a thickness of a film formed on the substrate held by the conveying member.

Effects of the invention

This can provide a technique for improving convenience in measuring the film thickness of the substrate after film formation.

Drawings

FIG. 1 is a layout view of a film formation system according to an embodiment of the present invention.

Fig. 2 (a) and (B) are a top view and a side view of the conveyance unit.

Fig. 3 is a perspective view of a hand of the conveyance unit of fig. 2 (a) and 2 (B).

Fig. 4 (a) and (B) are explanatory views of the flexure of the substrate and the function of the support member.

Fig. 5 is an explanatory view of the transport unit in the delivery room.

Fig. 6 is a sectional view of the conveying unit of fig. 5.

Fig. 7 (a) and (B) are explanatory views of the substrate transfer operation.

Fig. 8 (a) and (B) are explanatory views of the substrate transfer operation.

Fig. 9 (a) and (B) are explanatory views of the substrate transfer operation.

Fig. 10 (a) and (B) are explanatory views of the substrate transfer operation.

Fig. 11 (a) to (F) are explanatory views of movement of the vapor deposition source.

Fig. 12 (a) and (B) are explanatory views of the mask transfer operation to the mask stage.

Fig. 13 (a) and (B) are explanatory views of the mask transfer operation to the mask stage.

Fig. 14 (a) and (B) are explanatory views of the substrate transfer operation and the alignment operation.

Fig. 15 (a) and (B) are explanatory views of a film forming operation on a substrate.

Fig. 16 (a) to (C) are explanatory views showing an operation example of the entire film formation apparatus.

Fig. 17 (a) to (C) are explanatory views showing an operation example of the entire film formation apparatus.

Fig. 18 (a) to (C) are explanatory views showing an operation example of the entire film forming apparatus.

Fig. 19 (a) to (C) are explanatory views showing an operation example of the entire film forming apparatus.

Fig. 20 (a) to (D) are explanatory views showing an operation example of the entire film forming apparatus.

Fig. 21 (a) to (C) are explanatory views of another vapor deposition source and its moving means.

Fig. 22 (a) and (B) are explanatory views of the alignment unit.

Fig. 23 (a) to (D) are explanatory views of another configuration example of the film formation apparatus.

Fig. 24 is an explanatory diagram of another configuration example of the holding unit.

Fig. 25 (a) is an overall view of the organic EL display device, and (B) is a view showing a cross-sectional structure of one pixel.

Fig. 26 is an explanatory diagram showing an arrangement example of the film thickness measuring apparatus.

Fig. 27 is a sectional view of the film thickness measuring apparatus in each arrangement example.

Fig. 28 (a) to (C) are explanatory views showing the measurement principle of the film thickness measuring apparatus.

Fig. 29 (a) to (C) are explanatory views showing configuration examples of the film thickness measuring apparatus.

Fig. 30 is an explanatory diagram showing a change example of the reflectance of the substrate before and after film formation.

Fig. 31 is an explanatory diagram showing a structural example of the top plate of the film formation apparatus.

Fig. 32 is an explanatory view showing a substrate and a substrate carrier.

Fig. 33 (a) to (C) are explanatory views showing the structure of the optical fiber connector.

Description of the reference numerals

1 film forming device, 3 film forming chamber, 4 conveying unit, 5A and 5B conveying unit, 6A-6D holding unit, and 7A and 7B moving unit

Detailed Description

Hereinafter, embodiments will be described in detail with reference to the drawings. The following embodiments do not limit the invention according to the claims. In the embodiments, a plurality of features are described, but all of the plurality of features are not limited to the features essential to the invention, and a plurality of features may be arbitrarily combined. In the drawings, the same or similar components are denoted by the same reference numerals, and redundant description thereof is omitted.

< first embodiment >

< overview of the System >

Fig. 1 is a layout diagram of a film formation system 100. In each drawing, arrow Z indicates a vertical direction (gravitational direction), and arrows X and Y indicate horizontal directions perpendicular to each other. Arrow θ indicates the direction of rotation about the Z axis.

The film formation system 100 is configured such that the intermediate transfer device 101, the film formation device 1, and the intermediate transfer device 102 are arranged in the X direction, and the substrate W is transferred and processed in this order. The intermediate conveyance device 101 is located upstream in the conveyance direction of the substrate W, and the intermediate conveyance device 102 is located downstream in the conveyance direction of the substrate W. In the illustrated example, the film formation system 100 includes one film formation device 1, but the film formation device 1 may be provided upstream of the intermediate conveyance device 101 or downstream of the intermediate conveyance device 102. The control device 103 includes a processor such as a CPU, a storage device such as a semiconductor memory or a hard disk, and an input/output interface, and controls the film formation system 100.

The intermediate transfer devices 101 and 102 include a transfer robot 110. The transfer robot 110 is a two-arm robot in which two sets of arms 110b and a hand 110c are supported by a base portion 110 a. The two sets of arms 110b and the hand 110c are rotatable in the θ direction on the base portion 110a and are extendable and retractable. A stocker 104 for storing the mask M is provided adjacent to the intermediate transfer devices 101 and 102. The transfer robot 110 transfers the mask M in addition to the substrate W. The hand 110c has a fork shape, and the substrate W and the mask M are placed on the hand 110c and conveyed.

The film deposition apparatus 1 is a device that performs a film deposition process on a substrate W that is carried in from the intermediate transfer device 101 and sends the substrate W to the intermediate transfer device 102. The film deposition apparatus 1 includes a delivery chamber 2 for delivering and receiving the substrate W and a plurality of film deposition chambers 3 disposed adjacent to the delivery chamber 2. In the present embodiment, two film forming chambers 3 are provided, and one film forming chamber is disposed on each of both sides of the transfer chamber 2 in the Y direction. The delivery chamber 2 and the film forming chamber 3 are surrounded by the wall portions 20 and 30, respectively, and can maintain airtightness.

In the film forming chamber, a deposition material is formed on the substrate W. A thin film of a vapor deposition substance having a predetermined pattern can be formed on the substrate W using the mask M. The substrate W may be made of a material selected from glass, resin, metal, and the like, and a material in which a resin layer such as polyimide is formed on glass is typically used. In the case of this embodiment, the substrate W has a rectangular shape. The vapor deposition material is an organic material, an inorganic material (metal, metal oxide, or the like), or the like. The film formation apparatus 1 is applicable to a manufacturing apparatus for manufacturing electronic devices such as display devices (flat panel displays), thin film solar cells, and organic photoelectric conversion elements (organic thin film imaging elements), optical components, and the like, and particularly, to a manufacturing apparatus for manufacturing organic EL panels.

< transfer Chamber >

The transfer chamber 2 transfers the substrate W and the mask M to and from the deposition apparatus 1 by the intermediate transfer apparatuses 101 and 102, and distributes the substrate W and the mask M to the deposition chamber 3. Therefore, the transfer chamber 2 may also be referred to as a sorting chamber.

< multidirectional conveying Unit >

The transfer chamber 2 is provided with a transfer unit 4 that transfers the substrate W and the mask M. The transfer unit 4 receives the substrate W or the mask M from the intermediate transfer device 101 and delivers the substrate W or the mask M to the holding units 6A to 6D. The substrates W and the masks M received from the holding units 6A to 6D are sent to the intermediate transfer device 102. Fig. 2 (a) and 2 (B) are a plan view and a side view of the conveyance unit 4.

The transfer unit 4 of the present embodiment is a horizontal articulated robot capable of moving a substrate W or the like in a plurality of directions on an X-Y plane, and includes a cylindrical base portion 40, an arm portion 41 supported by the base portion 40, and a hand portion 44 supported by the arm portion 41. The base part 40 has a drive shaft 40a, and performs rotation of the arm part 41 around the Z1 axis based on the rotation of the drive shaft 40a in the θ direction and lifting and lowering of the arm part 41 based on the vertical movement of the drive shaft 40 a. Arm 41 has arm members 42 and 43. One end of the arm member 42 is connected to the drive shaft 40a, and the other end is connected to one end of the arm member 43. The arm member 43 is coupled to the arm member 42 so as to be rotatable about the Z2 axis. The hand 44 is connected to the other end of the arm member 43 so as to be rotatable about the Z3 axis.

Fig. 3 is referred to in addition to fig. 2 (a) and 2 (B). Fig. 3 is a perspective view of the hand 44. The hand 44 includes a plate-shaped hand main body 45 and a plurality of support members 46 to 48 provided upright on the hand main body 45 and supporting the substrate W. The strut members 46 to 48 are roughly divided into a strut member 46 located at the central portion of the hand main body 45 and strut members 47 and 48 located at the peripheral portions. The substrate W is placed on the plurality of support members 46 to 48. In a state where the substrate W is supported by the hand 44, the support member 46 is positioned at the center of the substrate W, and the support members 47 and 48 are positioned at the peripheral edge of the substrate W.

The stay member 46 includes a pin 46a and an elastic member 46b provided at a distal end portion thereof. The stay member 47 includes a pin 47a, a placement portion 47b provided at a distal end portion thereof, and an elastic member 47c provided on an upper surface of the placement portion 47b and positioned at the distal end portion of the stay member 47. The stay member 48 includes a plurality of pins 48a, a placement portion 48b provided at the distal end portions of the plurality of pins 48a, and a plurality of elastic members 48c provided on the upper surface of the placement portion 48b and positioned at the distal end portions of the stay member 48.

By supporting the substrate W by the support members 46 to 48, the substrate W can be supported in a small area, and friction and the like can be prevented from occurring on the surface of the substrate W. The elastic members 46b, 47c, and 48c are portions that contact the substrate W, and are made of, for example, resin. By bringing the elastic members 46b, 47c, and 48c into contact with the substrate W, it is possible to more reliably prevent friction and the like from occurring on the surface of the substrate W.

As shown in fig. 2 (B), the height H1 of the stay member 46 from the hand body 45 and the height H2 of the stay members 47 and 48 are in a relationship of H1> H2. This prevents the central portion of the substrate W from sagging. Fig. 4 (a) and 4 (B) are explanatory views illustrating a state where the holding unit 6A receives the substrate W from the hand 44.

As will be described later, in the present embodiment, the holding units 6A to 6D hold the substrate W by electrostatic force. When the holding units 6A to 6D receive the substrates W, the suction force decreases if the flatness is low. In addition, the accuracy of film formation during film formation also decreases. Fig. 4 (a) shows a comparative example in which the hand 44 does not include the support member 46, and the substrate W is supported by the support member 47 (and the support member 48). In the case of a large substrate W, the central portion thereof bends and sags due to its own weight. If the holding unit 6A sucks the substrate W in this state, a gap may be formed between the central portion of the substrate W and the lower surface (holding surface) of the holding unit 6A, resulting in a decrease in suction force.

On the other hand, in the present embodiment shown in fig. 4 (B), since the relationship between the height H1 of the support member 46 and the height H2 of the support members 47 and 48 is H1> H2, the central portion of the substrate W is supported by the support member 46, and the central portion of the substrate W is slightly raised. Even in a large-sized substrate W, the central portion of the substrate W can be prevented from bending and sagging under its own weight, and the central portion of the substrate W is not in contact with the holding unit 6A before the peripheral portion. As a result, the suction spreads from the central portion to the peripheral portion of the substrate W, and the entire substrate W is held by the holding unit 6A without a gap.

< sliding type conveying means >

As shown in fig. 1, the film deposition apparatus 1 includes two sets of transport units 5A and 5B disposed from the delivery chamber 2 to the two film deposition chambers 3. The conveyance unit 5A includes holding units 6A and 6C and a moving unit 7A that moves them independently in parallel in the Y direction. The conveyance unit 5B has the same configuration as the conveyance unit 5A, and includes holding units 6B and 6D and a moving unit 7B that moves the holding units and 6D independently in parallel in the Y direction.

Fig. 5 shows a portion of the transport units 5A and 5B disposed in the delivery room 2, and fig. 6 shows a cross-sectional view of the transport unit 5A (the moving unit 7A and the holding unit 6A). The conveyance units 5A and 5B are units that independently reciprocate the holding units 6A to 6D in the Y direction in a horizontal posture at a position higher than the conveyance unit 4, and are arranged side by side in the X direction. Fig. 6 shows the configuration of the conveyance unit 5A (the movement unit 7A and the holding unit 6A) as a representative example, but the holding units 6A to 6D have the same configuration, and the movement units 7A and 7B also have the same configuration.

The moving units 7A and 7B of the present embodiment are mechanisms for moving the holding units 6A to 6D by magnetic force, and particularly, are mechanisms for performing floating movement by magnetic force. The moving units 7A and 7B each include a pair of guide members 70 that define a moving path in the Y direction of the holding units 6A to 6D. Each guide member 70 has a C-shaped cross section and is a rail member extending in the Y direction. The pair of guide members 70 are separated from each other in the X direction.

Each guide member 70 includes a plurality of a pair of magnetic elements 71 separated in the Z direction. A plurality of a pair of magnetic elements 71 are arranged at equal intervals in the Y direction. At least one of the pair of magnetic elements 71 is an electromagnet, and the other is an electromagnet or a permanent magnet.

The holding units 6A to 6D are carriers for conveying the substrate W and the mask M. Each of the holding units 6A to 6D includes a main body member 60 having a rectangular shape in plan view. Each end of the main body member 60 in the X direction is inserted into the corresponding guide member 70. A permanent magnet 61 provided with a yoke, not shown, is fixed to each of the upper and lower surfaces of each end portion of the main body member 60 in the X direction. The upper and lower permanent magnets 61 are provided in the main body member 60 in plural numbers in the Y direction. The permanent magnet 61 faces the magnetic element 71 of the guide member 70. The holding units 6A to 6D can generate a floating force by the repulsive force between the permanent magnets 61 and the magnetic elements 71. By sequentially switching the magnetic elements 71 that generate magnetic force among the plurality of magnetic elements (electromagnets) 71 provided in the Y direction, the holding units 6A to 6D can generate moving force in the Y direction by the attractive force between the permanent magnet 61 and the magnetic elements 71.

In the present embodiment, the moving units 7A and 7B are magnetic levitation transport mechanisms, but may be other transport mechanisms capable of moving the holding units 6A to 6D, such as roller transport mechanisms, belt transport mechanisms, and rack-and-pinion mechanisms.

A scale 72 extending in the Y direction is disposed on the guide member 70, and a sensor 64 for reading the scale 72 is provided on the main body member 60. The Y-direction position of each of the holding units 6A to 6D can be specified based on the detection result of the sensor 64.

Each of the holding units 6A to 6D includes a holding portion 62 for holding the substrate W. In the present embodiment, the holding unit 62 is an electrostatic chuck that adsorbs the substrate W by an electrostatic force, and the holding unit 62 includes a plurality of electrodes 62a disposed on the lower surfaces of the holding units 6A to 6D. The holding units 6A to 6D each further include a holding portion 63 for holding the mask M. The holding portion 63 is, for example, a magnetic chuck that magnetically attracts the mask M, and is located outside in the X direction of the holding portion 62. The holding portion 63 may be a clamping mechanism that mechanically clamps the mask M.

< substrate reception action >

The reception of the substrate W and the mask M conveyed from the conveyance unit 4 by the holding units 6A to 6D is performed at a predetermined position in the delivery chamber 2. Fig. 5 shows a state where the holding units 6A to 6D are located at the respective receiving positions PA to PD. The receiving positions PA to PD are arranged in a matrix (2 × 2) in an X-Y plane, and are set outside the film forming chamber 3, i.e., inside the delivery chamber 2. Since there are four different receiving positions PA to PD, these receiving positions PA to PD can be used as buffers for stopping the substrate W when a system failure occurs on the downstream side.

Fig. 7 (a) to 8 (B) show an example of the receiving operation of the substrate W from the transport unit 4 by the holding unit 6B at the receiving position PB. Fig. 7 (a) shows a state in which the conveyance unit 4 receives the substrate W from the intermediate conveyance device 101. The substrate W is placed on the hand 44. In other words, the substrate W is supported by the hand 44 from the lower side thereof. The holding unit 6B is moved to the reception position PB by the moving unit 7B. Fig. 7 (B) shows a state in which the hand 44 is moved to a position below the holding unit 6B by the operation of the arm 41 of the transport unit 4. In the state of fig. 7 (B), the hand 44 is rotated by 90 degrees in the θ direction with respect to the state of fig. 7 (a). Therefore, the posture of the substrate W in the X direction (fig. 7 a) changes from the longitudinal direction to the Y direction (fig. 7B).

At the stage of fig. 7B, the holding unit 6B is aligned with the substrate W. The transfer chamber 2 is provided with a camera 21 for alignment. The relative position of the holding unit 6B and the substrate W is determined based on the captured image of the camera 21, and the positions of the substrate W in the X direction, the Y direction, and the θ direction are adjusted by the transfer unit 4.

Fig. 8 (a) shows a state in which the arm 41 of the transport unit 4 is raised and the substrate W is brought into contact with the holding portion 62 of the holding unit 6B. The substrate W is held by the holding portion 62 by an electrostatic force of the holding portion 62. In this way, in the present embodiment, the substrate W is transferred from the transport unit 4 to the holding unit 6B from below to above. Fig. 8 (B) shows a state in which the arm 41 of the transport unit 4 is lowered and the reception of the substrate W by the holding unit 6B is completed.

The same applies to the transfer of the substrate W between the transport unit 4 and the other holding units 6A, 6C, and 6D. As an example, fig. 9 (a) to 10 (B) show an example of the receiving operation of the substrate W from the transport unit 4 by the holding unit 6A at the receiving position PA. Fig. 9 (a) shows a state in which the conveyance unit 4 receives the substrate W from the intermediate conveyance device 101. The substrate W is supported by the hand 44 from the lower side thereof. The holding unit 6A is moved to the receiving position PA by the moving unit 7A. Fig. 9 (B) shows a state in which the hand 44 is moved to a position below the holding unit 6B by the operation of the arm 41 of the conveying unit 4. In the state of fig. 9 (B), the hand 44 is rotated by 90 degrees in the θ direction with respect to the state of fig. 9 (a). Therefore, the posture of the substrate W in the X direction (fig. 9 a) changes from the longitudinal direction to the Y direction (fig. 9B).

At the stage of fig. 9 (B), the holding unit 6A is aligned with the substrate W. The relative position between the holding unit 6A and the substrate W is determined based on the image captured by the camera 21 provided in the transfer chamber 2, and the positions of the substrate W in the X direction, the Y direction, and the θ direction are adjusted by the transport unit 4.

Fig. 10 (a) shows a state in which the arm 41 of the transport unit 4 is raised and the substrate W is brought into contact with the holding portion 62 of the holding unit 6A. The substrate W is held by the holding portion 62 by an electrostatic force of the holding portion 62. Fig. 10 (B) shows a state in which the arm 41 of the transport unit 4 is lowered and the holding unit 6A completes reception of the substrate W.

The above description has been given of the receiving operation of the substrate W, but the same applies to the receiving operation of the mask M.

< film Forming Chamber >

In the film forming chamber 3, a film is formed on the substrate W using the mask M. As shown in fig. 1, two mask stages 31 are disposed in the two film forming chambers 3, respectively. The total of four mask stages 31 defines vapor deposition positions JA to JD at which vapor deposition processing is performed. The two film forming chambers 3 are identical in structure. Each film forming chamber 3 is provided with a vapor deposition source 8 and a moving means 9 for moving the vapor deposition source 8. The structure and operation of the vapor deposition source 8 and the moving means 9 will be described with reference to fig. 11 (a) to 11 (F).

The vapor deposition source 8 is a film forming unit including a crucible for containing a raw material of a vapor deposition material, a heater for heating the crucible, and the like, and configured to heat the raw material and emit the vapor deposition material as vapor upward from the opening 8 a. The moving unit 9 includes an actuator 90, a pair of movable rails 94, and a pair of fixed rails 95. The actuator 90 includes a drive source 93, an arm member 91, and an arm member 92. One end of the arm member 91 is connected to a drive source 93, and is rotated by the drive source 93. The other end of the arm member 91 is rotatably connected to one end of the arm member 92, and the other end of the arm member 92 is rotatably connected to the bottom of the vapor deposition source 8.

The pair of movable rails 94 guide the movement of the vapor deposition source 8 in the Y direction. Each movable rail 94 extends in the Y direction, and the pair of movable rails 94 are separated from each other in the X direction. The pair of fixed rails 95 guide the movement of the pair of movable rails 94 in the X direction. Each fixed rail 95 is immovably fixed and extends in the X direction. The pair of fixed rails 95 are separated from each other in the Y direction.

By driving the actuator 90, the vapor deposition source 8 slides in the Y direction below the vapor deposition position JA (below the mask stage 31), slides from the vapor deposition position JA side to the vapor deposition position JB side, and further slides in the Y direction below the vapor deposition position JB (below the mask stage 31). Specifically, when the arm members 91 and 92 are rotated from the positions of fig. 11 (a) by driving the actuator 90, the vapor deposition source 8 passes below the vapor deposition position JA in the Y direction by being guided by the pair of movable rails 94 as shown in fig. 11 (B). When the arm members 91 and 92 are rotated in the opposite directions by the driving of the actuator 90 from this state, the vapor deposition source 8 passes below the vapor deposition position JA in the Y direction and returns to the position of fig. 11 (a) as shown in fig. 11 (C).

When the arm members 91 and 92 are further rotated by the driving of the actuator 90, the vapor deposition source 8 and the pair of movable rails 94 move in the X direction toward the vapor deposition position JB side in accordance with the guidance of the pair of fixed rails 95. When the arm members 91 and 92 are further rotated from the position of fig. 11 (D) by the driving of the actuator 90, the vapor deposition source 8 passes below the vapor deposition position JB in the Y direction by being guided by the pair of movable rails 94, as shown in fig. 11 (E). When the arm members 91 and 92 are rotated in the opposite directions by the driving of the actuator 90 from this state, the vapor deposition source 8 passes below the vapor deposition position JB in the Y direction and returns to the position of fig. 11 (D) as shown in fig. 11 (F).

In this way, in the present embodiment, by moving one vapor deposition source 8, the vapor deposition source 8 can be shared by two vapor deposition positions, i.e., the vapor deposition position JA and the vapor deposition position JB.

Next, the mounting of the mask M on the mask stage 31, the alignment (alignment) operation of the mask M and the substrate W, and the subsequent film formation operation will be described with reference to fig. 12 a to 15B.

First, an operation of mounting the mask M on the mask stage 31 will be described. Fig. 12 (a) to 13 (B) show the operation of mounting the mask M on the mask stage 31 at the vapor deposition position JA. From the state of fig. 12 (a), the holding unit 6A holding the mask M is moved onto the mask stage 31 by the moving unit 7A. When the mask M reaches a predetermined position on the mask stage 31 as shown in fig. 13 (a), the magnetic force of the magnetic element 71 of the moving unit 7A is adjusted to reduce the floating amount of the holding unit 6A and release the holding of the mask M by the holding unit 6A as shown in fig. 13 (B). Thereby, the mask M is mounted on the mask stage 31.

Next, the alignment operation and the film formation operation will be described. Fig. 14 (a) shows a state in which the holding unit 6A holding the substrate W is moved to the vapor deposition position JA by the moving unit 7A. When the substrate W reaches above the mask M, alignment on the X-Y plane of the substrate W and the mask M is performed. In the alignment, as shown in fig. 14 (B), the alignment marks attached to the substrate W and the mask M are respectively photographed by the camera 32, and the positional displacement amount between the substrate W and the mask M is calculated from the photographed images. Then, the position of the substrate W is adjusted so that the calculated amount of positional deviation is reduced. In the present embodiment, the position of the substrate W is adjusted by adjusting the magnetic force of the magnetic element 71 of the moving unit 7A. By adjusting the magnetic force of each magnetic element 71 separated in the X direction and the Y direction, the position of the holding unit 6A can be displaced in the X direction, the Y direction, and the θ direction, and thus the position of the substrate W held by the holding unit 6A in the X direction, the Y direction, and the θ direction can be displaced. For example, if the magnetic force of the magnetic element 71 provided on one of the pair of guide members 70 is increased, the holding unit 6A and the substrate W can be displaced toward the one guide member 70 (or toward the other guide member 70 by repulsion of the magnetic force) by the attraction of the magnetic force.

The imaging by the camera 32 and the alignment of the substrate W and the mask M by the adjustment of the magnetic force of the magnetic element 71 may be repeated until the amount of positional deviation therebetween falls within the allowable range. When the alignment is completed, as shown in fig. 15 (a), the magnetic force of the magnetic element 71 of the moving unit 7A is adjusted to reduce the floating amount of the holding unit 6A, and the substrate W is superimposed on the mask M. The holding of the substrate W by the holding unit 6A is not released. Subsequently, a film forming operation is performed. As shown in fig. 15 (B), the vapor deposition material is discharged from the vapor deposition source 8 toward the substrate W while the vapor deposition source 8 is moved. A film of the vapor deposition substance passing through the mask M is formed on the substrate W. During film formation, the substrate W is held by the holding unit 6A.

< example of operation of film Forming apparatus >

With reference to fig. 16 (a) to 20 (D), an operation example in which a plurality of substrates W are successively deposited in the deposition apparatus 1 will be described. First, the mask M is conveyed to the mask stage 31 at each of the vapor deposition positions JA to JD. Fig. 16 (a) shows a state where the first mask M is conveyed from the intermediate conveyance device 101. The conveyance unit 4 receives the mask M on the hand 44, and delivers the mask M to the holding unit 6A at the receiving position PA, as shown in fig. 16 (B). The holding unit 6A holds the mask M from the upper side thereof.

As shown in fig. 16 (C), the second mask M is conveyed from the intermediate conveyance device 101. At the same time, the holding unit 6A is moved in parallel to the deposition position JA by the moving unit 7A. The conveyance unit 4 receives the second mask M on the hand 44, and delivers the mask M to the holding unit 6C at the receiving position PC, as shown in fig. 17 (a). The holding unit 6C holds the mask M from the upper side thereof. At the same time, the first mask M is placed on the mask stage 31 at the vapor deposition position JA, and the holding unit 6A is returned to the receiving position PA.

As shown in fig. 17 (B), the third mask M is conveyed from the intermediate conveyance device 101. At the same time, the holding unit 6C is moved in parallel to the deposition position JC by the moving unit 7A. The transport unit 4 receives the third mask M by the hand 44, and delivers the third mask M to the holding unit 6B at the receiving position PB. By repeating the above steps, as shown in fig. 17 (C), masks M are arranged at the vapor deposition positions JA to JD, respectively.

Next, a series of operations for forming a film on the substrate W will be described. Fig. 18 (a) shows a state where the first substrate W is conveyed from the intermediate conveyance device 101. The transfer unit 4 receives the substrate W on the hand 44, and delivers the substrate W to the holding unit 6A at the receiving position PA as shown in fig. 18 (B). The holding unit 6A holds the substrate W from above.

As shown in fig. 18 (C), the second substrate W is conveyed from the intermediate conveyance device 101. At the same time, the holding unit 6A that has received the substrate W is moved in parallel to the deposition position JA by the moving unit 7A. Alignment between the substrate W and the mask M is performed at the deposition position JA. The transfer unit 4 receives the second substrate W on the hand 44, and delivers the substrate W to the holding unit 6C at the receiving position PC, as shown in fig. 19 (a). The holding unit 6C holds the substrate W from above the substrate W. At the same time, the film forming operation of the vapor deposition source 8 is performed on the first substrate W at the vapor deposition position JA.

As shown in fig. 19 (B), the third substrate W is conveyed from the intermediate conveyance device 101. At the same time, the holding unit 6C that has received the second substrate W is moved in parallel to the deposition position JC by the moving unit 7A. Alignment of the substrate W and the mask M is performed at the deposition position JC. The transfer unit 4 receives the third substrate W on the hand 44, and delivers the substrate W to the holding unit 6B at the receiving position PB as shown in fig. 19 (C). The holding unit 6B holds the substrate W from above the substrate W. At the same time, the vapor deposition source 8 having finished forming the film at the vapor deposition position JA moves toward the vapor deposition position JB. Further, the film forming operation of the vapor deposition source 8 is performed on the second substrate W at the vapor deposition position JC.

As shown in fig. 20 (a), the fourth substrate W is conveyed from the intermediate conveyance device 101. At the same time, the holding unit 6B that has received the third substrate W is moved in parallel to the vapor deposition position JB by the moving unit 7B. Alignment of the substrate W and the mask M is performed at the vapor deposition position JB. The holding unit 6A holding the first substrate W on which film formation has been completed is moved to the receiving position PA by the moving unit 7A.

The transfer unit 4 receives the fourth substrate W on the hand 44, and delivers the substrate W to the holding unit 6D at the receiving position PD, as shown in fig. 20 (B). The holding unit 6D holds the substrate W from above the substrate W. At the same time, the vapor deposition source 8 whose film formation has been completed at the vapor deposition position JC moves to the vapor deposition position JD side, and the holding unit 6C holding the second substrate W whose film formation has been completed moves to the receiving position PC by the moving unit 7A. Further, the film formation operation of the vapor deposition source 8 is performed on the third substrate W at the vapor deposition position JB.

When the holding unit 6A holding the first substrate W on which film formation has been completed returns to the moving unit 7A, the transport unit 4 receives the first substrate W from the holding unit 6A at the receiving position PA, as shown in fig. 20 (C). At the same time, the holding unit 6D that has received the fourth substrate W is moved in parallel to the deposition position JD by the moving unit 7B. As shown in fig. 20 (D), the transfer unit 4 sends the first substrate W on which film formation has been completed to the intermediate transfer device 102. By repeating the above steps, a plurality of substrates W are sequentially subjected to film formation.

In the film deposition apparatus 1 described above, the conveyance of the substrate W and the mask M from the intermediate conveyance device 101 to the respective vapor deposition positions JA to JD is performed by using the conveyance unit 4 and the conveyance unit 5A or 5B together. The transport distance of each transport unit can be shortened and the substrate W can be transported over a longer distance than when being transported by a single transport mechanism. When a large substrate W is conveyed, a long conveyance distance can be achieved, and the conveyance units can be prevented from being increased in size due to increased rigidity. Therefore, the film deposition apparatus 1 can be provided that can cope with an increase in the size of the substrate W.

In addition, different mechanisms are employed for the conveyance unit 4 and the conveyance units 5A and 5B. That is, the degree of freedom in the position of the transfer destination of the substrate W and the degree of freedom in the posture (orientation) of the substrate W can be improved by configuring the transfer unit 4 with an articulated robot. The transport units 5A and 5B are configured by the parallel movement mechanism of the substrate W, and can cope with a long transport distance.

Since the transfer of the substrate W from the transport unit 4 to the transport units 5A and 5B is performed by the holding portion 62, which is an electrostatic chuck, the substrate W can be transferred by attaching the substrate W from the transport unit 4 to the holding portion 62. Compared with the mode of replacing the substrate W, the method does not need to load the substrate W, and can shorten the delivery time. This can improve productivity.

When the substrate W and the mask M are transferred from the delivery chamber 2 to the film forming chamber 3, their postures are switched by 90 degrees by the transfer unit 4 so that the longitudinal directions of the substrate W and the mask M are directed in the Y direction. This contributes to downsizing of the width of the film forming apparatus 1 in the X direction. Of course, the postures of the substrate W and the mask M may not be switched. In this case, the film formation apparatus 1 contributes to downsizing of the width in the Y direction.

< second embodiment >

In the first embodiment, the vapor deposition source 8 is configured to be movable in both the X direction and the Y direction, but may be configured to be movable only in the X direction. Fig. 21 (a) to 21 (C) show examples thereof, and illustrate the use of the structures at the vapor deposition positions JA and JB. The same structure can be adopted at the evaporation positions JC and JD.

The vapor deposition source 8 'instead of the vapor deposition source 8 has a form elongated in the Y direction, and the openings 8a' for discharging the vapor deposition material have a length corresponding to the length of the vapor deposition positions JA and JB in the Y direction. The moving unit 9' instead of the moving unit 9 has a pair of fixed rails 96. Each of the fixed rails 96 extends in the X direction, and the pair of fixed rails 96 are separated from each other in the Y direction. The moving unit 9' has an actuator not shown corresponding to the actuator 90.

When the deposition source 8' forms a film on the substrate W at the deposition position JA with the position between the deposition position JA and the deposition position JB as a standby position as shown in fig. 21 (a), the deposition position JA is traversed in the X direction as shown in fig. 21 (B). When a film is formed on the substrate W at the vapor deposition position JB, the vapor deposition position JB is traversed in the X direction as shown in fig. 21 (C). According to the present embodiment, the mechanism of the moving means 9' can be made relatively simple.

< third embodiment >

In the first embodiment, the adjustment of the magnetic force of the magnetic element 71 is used for the alignment of the mask M with the substrate W at the deposition positions JA to JD. Fig. 22 (a) and 22 (B) show an example thereof. The alignment device 10 is disposed at each of the vapor deposition positions JA to JD, and the alignment device 10 disposed at the vapor deposition position JA is illustrated in the illustrated example.

The alignment device 10 receives the substrate W from the holding unit 6A, and aligns the mask M with the substrate W to overlay the substrate W with the mask M. The alignment apparatus 10 includes an arm member 11 having a claw that holds the substrate W. The substrate W held by the holding unit 6A is released from the holding and placed on the arm member 11. The arm member 11 can be displaced in the X direction, the Y direction, and the θ direction by the drive unit 12, thereby adjusting the positions of the substrate W placed on the arm member 11 in the X direction, the Y direction, and the θ direction. The driving unit 12 can be lifted and lowered by the lifting unit 13.

The alignment device 10 is further provided with a plate unit 14 and a lifting unit 15 for lifting and lowering the plate unit 14. The plate unit 14 is a plate for bringing the substrate W and the mask M into close contact with each other, and includes, for example, a magnet that attracts the iron mask M and a cooler that cools the substrate W.

At the time of alignment, as shown in fig. 22 (a), the alignment marks attached to the substrate W and the mask M are respectively photographed by the camera 32, and the positional displacement amount between the substrate W and the mask M is calculated from the photographed images. Then, the position of the substrate W is adjusted so that the calculated amount of positional deviation is reduced. The position of the substrate W is adjusted by displacing the arm member 11 on which the substrate W is placed by the driving unit 12 in a state where the substrate W and the mask M are vertically separated.

The imaging by the camera 32 and the alignment of the substrate W and the mask M by the adjustment of the magnetic force of the magnetic element 71 may be repeated until the amount of positional deviation therebetween falls within the allowable range. When the alignment is completed, as shown in fig. 22 (B), after the holding unit 6A is retracted from the vapor deposition position JA, the substrate W is lowered onto the mask M by the lifting unit 13 together with the driving unit 12 and the arm member 11 to be overlapped with each other, and the plate unit 14 is lowered onto the substrate W by the lifting unit 15 to be brought into close contact with the mask M. In this state, the film is formed on the substrate W.

When the film formation is completed, the plate unit 14 is raised by the raising and lowering unit 15. After the holding unit 6A has moved to the vapor deposition position JA again, the substrate W is raised by the raising and lowering unit 13 together with the driving unit 12 and the arm member 11, and is transferred to the holding unit 6A.

< fourth embodiment >

The substrate W and the mask M may be transported to the film forming chamber 3 only by the transport unit 4 without passing through the transport units 5A and 5B. Fig. 23 (a) to 23 (D) show examples thereof. In the illustrated example, corresponding holding units 6A and 6C are arranged at the respective vapor deposition positions JA and JC. The holding units 6A, 6C are fixedly disposed, and their positions are not moved. Each of the vapor deposition positions JA and JC is a form in which the vapor deposition sources 8 and 8, the mask stages 31 and 31, and the holding units 6A and 6C are arranged in this order from below. The vapor deposition source 8 may be fixedly disposed, but in the present embodiment, it is moved as in the other embodiments. The mask M is mounted on the mask stage 31 in advance.

As shown in fig. 23 (a), when the substrate W is conveyed from the intermediate conveyance device 101, the conveyance unit 4 receives the substrate W on the hand 44, and delivers the substrate W to the holding unit 6A at the vapor deposition position JA as shown in fig. 23 (B) and 23 (C). The deposition position JA also serves as the receiving position PA. The holding unit 6A holds the substrate W from above. Since the transfer of the substrate W is performed by the holding portion 62 which is an electrostatic chuck, the substrate W can be transferred by attaching the substrate W from the transfer unit 4 to the holding portion 62. Compared with the mode of replacing the substrate W, the method does not need to load the substrate W, and can shorten the time for delivering. This can improve productivity. The alignment of the mask M and the substrate W can be performed by adjusting the position and posture of the substrate W by the transfer unit 4.

Thereafter, as shown in fig. 23 (D), the vapor deposition source 8 is moved in the Y direction to form a film on the substrate W held by the holding unit 6A. The same applies to the film formation operation at the deposition position JC, and the substrate W can be transported and formed at the deposition position JA and the deposition position JC in parallel. When the film formation is completed, the transfer unit 4 receives the substrate W from the holding unit 6A or 6C and sends the substrate W to the intermediate transfer device 102.

< fifth embodiment >

In the first embodiment, the holding portion 62 for holding the substrate W is formed of an electrostatic chuck, but another suction method may be used. Fig. 24 shows an example thereof, and shows a lower surface of the holding portion 62. A plurality of suction pads 65 are provided on the lower surface of the holding portion 62. The suction pad 65 is, for example, an adhesive member for holding the substrate W by an adhesive force. Alternatively, the suction pad 65 is a vacuum pad.

< sixth embodiment >

Next, an example of a method for manufacturing an electronic device will be described. Hereinafter, the structure and the manufacturing method of the organic EL display device are exemplified as an example of the electronic device.

First, the organic EL display device manufactured will be described. Fig. 25 (a) is an overall view of the organic EL display device 50, and fig. 25 (B) is a view showing a cross-sectional structure of one pixel.

As shown in fig. 25 (a), a plurality of pixels 52 each including a plurality of light-emitting elements are arranged in a matrix in a display region 51 of an organic EL display device 50. Each light emitting element has a structure including an organic layer sandwiched between a pair of electrodes, and details thereof will be described later.

The pixel here is a minimum unit that can display a desired color in the display region 51. In the case of a color organic EL display device, the pixel 52 is configured by a combination of a plurality of sub-pixels showing the first light emitting element 52R, the second light emitting element 52G, and the third light emitting element 52B which emit light different from each other. The pixel 52 is often configured by a combination of three sub-pixels, i.e., a red (R) light-emitting element, a green (G) light-emitting element, and a blue (B) light-emitting element, but is not limited thereto. The pixel 52 may include at least one sub-pixel, preferably two or more sub-pixels, and more preferably three or more sub-pixels. As the sub-pixel constituting the pixel 52, for example, a combination of four kinds of sub-pixels, i.e., a red (R) light emitting element, a green (G) light emitting element, a blue (B) light emitting element, and a yellow (Y) light emitting element, may be used.

Fig. 25 (B) is a partial cross-sectional view at the line a-B of fig. 25 (a). The pixel 52 includes a plurality of sub-pixels each formed of an organic EL element including a first electrode (anode) 54, a hole transport layer 55, one of a red layer 56R, a green layer 56G, and a blue layer 56B, an electron transport layer 57, and a second electrode (cathode) 58 on a substrate 53. The hole transport layer 55, the red layer 56R, the green layer 56G, the blue layer 56B, and the electron transport layer 57 correspond to organic layers. The red, green, and blue color layers 56R, 56G, and 56B are respectively formed in a pattern corresponding to light emitting elements (also referred to as organic EL elements) that emit red, green, and blue light.

The first electrode 54 is formed separately for each light emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 may be formed in common over the plurality of light emitting elements 52R, 52G, and 52B, or may be formed for each light emitting element. That is, as shown in fig. 25 (B), after the hole transport layer 55 is formed as a common layer over a plurality of sub-pixel regions, the red layer 56R, the green layer 56G, and the blue layer 56B may be formed separately for each sub-pixel region, and further, the electron transport layer 57 and the second electrode 58 may be formed as a common layer over a plurality of sub-pixel regions.

In order to prevent short-circuiting between the first electrodes 54 which are close to each other, an insulating layer 59 is provided between the first electrodes 54. Since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 60 for protecting the organic EL element from moisture and oxygen is provided.

In fig. 25 (B), the hole transport layer 55 and the electron transport layer 57 are illustrated as one layer, but may be formed of a multilayer having a hole blocking layer and an electron blocking layer depending on the structure of the organic EL display element. Further, a hole injection layer having a band structure in which holes can be smoothly injected from the first electrode 54 into the hole transport layer 55 may be formed between the first electrode 54 and the hole transport layer 55. Similarly, an electron injection layer may be formed between the second electrode 58 and the electron transport layer 57.

The red, green, and blue color layers 56R, 56G, and 56B may be formed of a single light-emitting layer, or may be formed by laminating a plurality of layers. For example, the red layer 56R may be formed of 2 layers, the upper layer may be formed of a red light-emitting layer, and the lower layer may be formed of a hole-transporting layer or an electron-blocking layer. Alternatively, the lower layer may be formed of a red light-emitting layer, and the upper layer may be formed of an electron-transporting layer or a hole-blocking layer. By providing the layer on the lower side or the upper side of the light-emitting layer in this way, the light-emitting position in the light-emitting layer is adjusted, and the optical path length is adjusted, whereby the color purity of the light-emitting element can be improved.

Here, although the red layer 56R is illustrated as an example, the green layer 56G and the blue layer 56B may have the same structure. The number of layers may be 2 or more. Further, layers of different materials may be stacked as in the light-emitting layer and the electron-blocking layer, or layers of the same material may be stacked, for example, 2 or more light-emitting layers may be stacked.

Next, an example of a method for manufacturing an organic EL display device will be specifically described. Here, it is assumed that the red layer 56R is composed of 2 layers of the lower layer 56R1 and the upper layer 56R2, and the green layer 56G and the blue layer 56B are composed of a single light-emitting layer.

First, the substrate 53 on which the circuit (not shown) for driving the organic EL display device and the first electrode 54 are formed is prepared. The material of the substrate 53 is not particularly limited, and may be made of glass, plastic, metal, or the like. In the present embodiment, a substrate in which a film of polyimide is laminated on a glass substrate is used as the substrate 53.

A resin layer such as acrylic or polyimide is applied by bar coating or spin coating on the substrate 53 on which the first electrode 54 is formed, and the resin layer is patterned by photolithography so as to form an opening in a portion where the first electrode 54 is formed, thereby forming the insulating layer 59. The opening corresponds to a light-emitting region where the light-emitting element actually emits light.

The substrate 53 on which the insulating layer 59 is patterned is sent into a first film formation chamber, and the hole transport layer 55 is formed as a common layer on the first electrode 54 in the display region. The hole transport layer 55 is formed using a mask having an opening formed in each display region 51 which is to be a panel portion of one organic EL display device.

Next, the substrate 53 formed up to the hole transport layer 55 is carried into the second film formation chamber. The substrate 53 is aligned with the mask, the substrate is placed on the mask, and the red layer 56R is formed on the hole transport layer 55 at a portion where the element of the substrate 53 emitting red light (a region where red subpixels are formed). Here, the mask used in the second film formation chamber is a high-definition mask in which openings are formed only in a plurality of regions of a subpixel to be red out of a plurality of regions on the substrate 53 to be subpixels of the organic EL display device. Thus, the red color layer 56R including the red light emitting layer is formed only in the region of the sub-pixel to be red out of the regions to be the plurality of sub-pixels on the substrate 53. In other words, the red layer 56R is selectively formed in the region of the red subpixel, not in the region of the blue subpixel and the region of the green subpixel, among the regions of the plurality of subpixels on the substrate 53.

Similarly to the formation of the red layer 56R, the green layer 56G is formed in the third film forming chamber, and the blue layer 56B is formed in the fourth film forming chamber. After the formation of the red layer 56R, the green layer 56G, and the blue layer 56B is completed, the electron transport layer 57 is formed in the entire display region 51 in the fifth film formation chamber. The electron transport layer 57 is formed as a common layer in the layers 56R, 56G, and 56B of 3 colors.

The substrate on which the electron transport layer 57 has been formed is moved to the sixth film forming chamber, and the second electrode 58 is formed. In the present embodiment, each layer is formed in the first to sixth film forming chambers by vacuum deposition. However, the present invention is not limited to this, and for example, the second electrode 58 in the sixth film formation chamber may be formed by sputtering. After that, the substrate on which the second electrode 58 is formed is moved to a sealing device, and the protective layer 60 is formed by plasma CVD (sealing step), whereby the organic EL display device 50 is completed. Here, the protective layer 60 is formed by a CVD method, but is not limited thereto, and may be formed by an ALD method or an inkjet method.

Here, the film formation in the first to sixth film formation chambers is performed using a mask in which openings corresponding to the patterns of the respective layers to be formed are formed. In the film formation, after the relative position adjustment (alignment) of the substrate 53 and the mask is performed, the substrate 53 is placed on the mask, and the film formation is performed.

< seventh embodiment >

Next, a film thickness measuring apparatus for measuring the film thickness of a substrate on which a film is formed will be described. In the present embodiment, a film thickness measurement device that measures a film thickness based on a reflectance of light on a substrate surface using an optical sensor will be described as an example.

Fig. 26 shows measurement positions MAA to MDC at which the film thickness measurement device 120 can be disposed in the film deposition device. The measurement positions MAA, MBA, MCA, and MDA are positions between the receiving positions PA to PD and the deposition positions JA to JD, which measure the film thickness of the substrate 53 transported by the transport units 5A and 5B inside the transfer chamber 2, i.e., outside the film deposition chamber 3. The measurement positions MAB, MBB, MCB, and MDB are positions between the receiving positions PA to PD and the deposition positions JA to JD, which measure the film thicknesses of the substrates transported by the transport units 5A and 5B in the film forming chamber 3. The measurement positions MAC, MBC, MCC, and MDC are positions for measuring the film thickness of the substrate located at the deposition positions JA to JJD in the film forming chamber 3. The film thickness measuring device 120 may be disposed at least one of the measurement positions MAA to MDC between the receiving positions PA to PD and the deposition positions JA to JD, and the film thickness measuring device 120 need not be disposed at all the measurement positions.

FIG. 27 is a sectional view of a film forming apparatus in YZ plane. As shown in fig. 27, the measurement positions MAA to MDC where the film thickness measuring apparatus 120 can be arranged are all arranged below the substrate 53 in the vertical direction (Z direction). Thus, the film thickness of the substrate 53 can be measured by the film thickness measuring device 120 during the conveyance by the conveyance units 5A and 5B.

In this way, since the film thickness of the substrate W is measured in a state where the substrate W is adsorbed by the ESC, the measurement accuracy can be improved, and the thin film measurement can be performed without requiring an additional large-scale facility such as a thin film measurement chamber. In addition, since the film thickness is measured during the conveyance, the film thickness can be measured at a high speed after the film formation.

Fig. 28 (a) to (C) are explanatory diagrams for explaining the principle of measurement by using an example in which the film thickness measuring device 120 is disposed at the measurement position MAA.

Fig. 28 (a) is a diagram when the laser beam is emitted from the film thickness measuring device 120 and the intensity of the reflected light is measured before the substrate is carried into the film forming chamber 3. Here, the received light intensity of the received laser beam is P _BG . By measuring the received light intensity, it is possible to determine the magnitude of noise (background noise) caused by the temperature characteristics of the light receiving sensor and the like, and leakage of light between optical fibers in a measuring device to be described later.

Followed byFIG. 28B shows a reference substrate W _REF When the film is sent into the film forming chamber 3, the laser beam is emitted from the film thickness measuring device 120, and the intensity of the reflected light is measured as a reference. In FIG. 28B, the reflectance R of the glass is shown by using, for example, a mother glass _ref Known substrate W _REF . Here, let P be the irradiation intensity of the transmitted laser beam _Tref Let the received light intensity of the received laser light be P _Rref The following equation (1) holds.

R _ref ＝(P _Rref -P _BG )/(P _Tref -P _BG ) (1)

Here, as described above, the reflectance R and the received light intensity P in fig. 28 (a) can be obtained _BG FIG. 28 (B) shows received light intensity P _Rref Therefore, the irradiation intensity P of the laser light can be determined based on the above formula _Tref . This makes it possible to determine the correspondence between the reflectance and the received light intensity.

Next, fig. 28 (C) is a diagram when the laser beam is emitted by the film thickness measuring device 120 and the intensity of the reflected light is measured when the substrate W is sent out from the film forming chamber 3 after being formed in the film forming chamber 3. In fig. 28 (C), the irradiation intensity P of the laser beam specified in fig. 28 (B) can be referred to _Tref Based on the received light intensity P of the laser light _R The reflectance R of the substrate W after film formation is determined by the following formula (2).

R＝(P _R -P _BG )/(P _Tref -P _BG ) (2)

Thereby, the change in reflectance can be determined.

The measurement of the background noise and the measurement of the reference as shown in fig. 28 (a) and 28 (B) may be performed for each substrate, or may be performed after a predetermined number of substrates are formed or after a predetermined time has elapsed.

Fig. 30 shows an example of the measurement results of the reflectance for each film thickness after film formation. As shown in FIG. 30, the thickness of the film was 40 angstroms

In the case of (4), the film thickness is greater than the reflectivity of the substrate>

In the case of (2), the reflectance at the wavelength around 280 and 330 to 420nm becomes large. Therefore, the film thickness can be estimated by measuring the reflectance in this wavelength band. For estimating the film thickness based on the reflectance, a known technique can be used. For example, the reflectance may be measured in advance at a plurality of film thicknesses, and the measurement result may be estimated based on the measured reflectance.

In the estimation of the film thickness based on the measurement result of the reflectance, the film thickness may be estimated based on the reflectances measured in a plurality of frequency bands. For example, the estimation results of the film thickness based on the measurement results of the reflectance at the wavelengths of 280nm and 330nm are respectively

And &>

In the case of (3), the average of the estimation results of the film thickness may be taken, and the film thickness may be

< example of Structure of apparatus for measuring film thickness >

(structural example 1)

Fig. 29 (a) shows a configuration example of the film thickness measuring apparatus 120. Film thickness measuring apparatus 120 of configuration example 1 includes light source 2901, vacuum flange 2902, light projecting and receiving unit 2903, beam splitter 2904, and PC2905. The light source 2901, the vacuum flange 2902, the light projecting and receiving part 2903, and the beam splitter 2904 are connected by optical fibers.

The light source 2901 is a light-emitting device capable of switching between light output and non-light output by operating the shade 29011. In one example, the light source 2901 includes a deuterium (D2) halogen light source 29012 that emits continuous light of halogen and deuterium from one exit port. In another example, the Light Source 2901 includes a Laser-Driven Light Source (Laser-Driven Light Source).

The vacuum flange 2902 is disposed at a connection portion between the vacuum atmosphere and the atmospheric atmosphere. For example, the light source 2901, the beam splitter 2904, and the PC2905 are disposed in a housing kept in an atmospheric environment, the light projection/reception unit 2903 is disposed in a film formation chamber that can be placed in a vacuum state outside the housing, and the light projection/reception unit 2903 is connected to the light source 2901 and the beam splitter 2904 via optical fibers that connect the inside and the outside of the housing via a vacuum flange 2902. In another example, the light projector 2903 may be disposed inside the film formation chamber 3 or the delivery chamber 2, and the light source 2901, the beam splitter 2904, and the PC2905 may be disposed outside the film formation chamber 3 or the delivery chamber 2. In this case, the vacuum flange 2902 may be provided on the wall surface of the film forming chamber 3 or the delivery chamber 2.

The light projector/receiver 2903 includes a light projector for projecting light emitted from the light source 2901 vertically upward as shown in fig. 27, and a light receiver for receiving reflected light and sending it to the beam splitter 2904. The spectrometer 2904 includes a light input port, and splits the input light to measure the light intensity for each wavelength band. Then, information on the measured intensity of light is transmitted to the PC2905.

The PC2905 calculates a measured value of the film thickness based on the intensity of the light measured by the spectroscope 2904 using the above mathematical expressions (1) and (2). In one example, the PC2905 can use the measured value of the film thickness for adjusting the time taken for the film forming process of the film forming apparatus 1, adjusting the amount of the vapor deposition material discharged from the vapor deposition source 8 of the film forming apparatus 1, adjusting the parameters of the film forming process in the subsequent stage, and the like.

(structural example 2)

Fig. 29 (B) shows a configuration example 2 of the film thickness measuring apparatus 120. The film thickness measuring apparatus 120 of configuration example 2 includes a light source 2921, vacuum flanges 2922a and 2922b (hereinafter, may be referred to as "vacuum flange 2922" without distinction), light and light receivers 2923a and 2923b (hereinafter, may be referred to as "light and light receivers 2923" without distinction), a spectroscope 2924, a PC2925, an optical fiber switch 2926, and a connector 2927. The light source 2921, the vacuum flange 2922, the light projecting and receiving part 2923, the spectroscope 2924, the optical fiber switch 2926, and the connector 2927 are connected to each other by optical fibers.

The light source 2921, vacuum flange 2922, light projecting and receiving unit 2923, beam splitter 2924, and PC2925 are the same as the light source 2901, vacuum flange 2902, light projecting and receiving unit 2903, beam splitter 2904, and PC2905 described in embodiment 1, and therefore, description thereof is omitted.

The junction 2927 connects branch optical fibers for branching light output from the light source 2921 to a plurality of input ports of the optical fiber switch 2926 to the light source 2921.

The optical fiber switch 2926 is a switch for switching between output and non-output of light input from the branch optical fiber, and light is output from any one of the output ports. In this embodiment, a case where the optical fiber switch 2926 has 3-input and 3-output will be described, but the number is not limited as long as a plurality of pairs of input ports and output ports are provided. In this embodiment, light output from the first output port (port 1) is directly input to the light projecting and receiving unit 2923a, light output from the second output port (port 2) is directly input to the light projecting and receiving unit 2923b, and light output from the third output port (port 3) is directly input to the spectroscope. Thus, by disposing the light receivers 2923a and 2923b at different measurement positions MAA to MDD, the film thickness of the plurality of transport lines can be measured. Further, by disposing the light receivers 2923a and 2923b at different positions in one measurement position, the accuracy of measuring the film thickness of one transport line can be improved. In addition, a change in the intensity of light output from the light source 2921 can be detected through the port 3.

(structural example 3)

Fig. 29 (C) shows a configuration example 3 of the film thickness measuring apparatus 120. The film thickness measuring apparatus 120 of configuration example 3 includes light sources 2941a and 2941b (hereinafter, may be referred to as a light source 2941 without distinction), vacuum flanges 2942a and 2942b (hereinafter, may be referred to as a vacuum flange 2942 without distinction), light-emitting and light-receiving parts 2943a and 2943b (hereinafter, may be referred to as a light-emitting and light-receiving part 2943 without distinction), a spectroscope 2944, and a PC2945. The light source 2941, the vacuum flange 2942, the light projector 2943, and the beam splitter 2944 are connected by optical fibers.

The light source 2941, the vacuum flange 2942, the light projecting and receiving unit 2943, the beam splitter 2944, and the PC2945 are the same as the light source 2901, the vacuum flange 2902, the light projecting and receiving unit 2903, the beam splitter 2904, and the PC2905 described in embodiment 1, and therefore, description thereof is omitted.

According to configuration example 3, it is not necessary to prepare a spectroscope and a PC for each measurement position.

< conical part >

As shown in fig. 27, at the arrangement positions MAA to MDC where the film thickness measuring apparatus 120 is arranged, the measurement light sent out from the film thickness measuring apparatus 120 is reflected at the top portions of the delivery chamber 2 and the film forming chamber 3 and is input to the light receiving and projecting unit, and as a result, the measurement accuracy may be lowered. Therefore, in the example of fig. 31, the tapered member 3101 is disposed at the top portion of the delivery chamber 2 in the light irradiation direction of the film thickness measuring apparatus 120. The tapered member 3101 has a triangular prism, pyramid, or cone-like shape, for example. This makes it possible to reflect the measurement light in a direction different from that of the film thickness measurement device 120. In one example, the tapered member 3101 is a black member having high light absorptivity. In one example, the surface portion irradiated with the measurement light from the film thickness measurement device 120 is subjected to surface processing such as sandblasting, thereby promoting diffusion of the light.

By disposing the tapered member 3101 in this manner, it is possible to prevent the measurement accuracy of the film thickness from being lowered due to reflection of the measurement light irradiated from the film thickness measurement device 120 at a portion different from the substrate W.

< construction examples of substrate and holding means >)

As shown in fig. 32, on the substrate, film formation regions 3201a to 3201c for measurement (hereinafter, may be referred to as the film formation regions 3201 without distinction) are arranged at respective locations where measurement is performed by the film thickness measuring apparatus 120. In fig. 32, three film formation regions 3201a to 3201c are shown in order to perform measurement at three locations on the substrate W, but the film formation regions for performing film thickness measurement may be determined in accordance with the number of measurement locations, or one film formation region may be arranged for measuring the film thicknesses at a plurality of locations. For example, one long-hole-shaped film formation region including the film formation regions 3201a to 3201c may be arranged.

In one example, the film formation area 3201 is disposed in an area different from an area where electronic devices are actually manufactured on the substrate W. For example, the film formation region is disposed near the end of the substrate W so that a common position can be measured in a plurality of types of substrates for manufacturing different electronic devices.

In addition, in the case where the film thickness is measured while the substrate W is being transported by the holding unit 6 at the measurement positions MAA, MAB, and the like, the measurement light from the film thickness measuring apparatus may be reflected by the holding unit 6, and the accuracy of measuring the film thickness may be lowered. Therefore, the holding unit 6 is also provided with an opening at a position corresponding to the film formation area 3201, for example, at a position vertically above the film formation area 3201. This can prevent the following: the measurement light emitted from the film thickness measuring device 120 is reflected by the holding unit 6 holding the substrate, and the reflected light enters the light receiving unit of the film thickness measuring device 120 and becomes a measurement noise.

In addition, an opening is also provided in the mask M in order to form a film in the film formation region 3201 for measurement. Therefore, as in the measurement position MAC of fig. 27, the film thickness is measured at the position where the film thickness is measured at the film formation position, with the mask M positioned on the substrate W.

< Joint Structure >, and

fig. 33 (a) to 33 (C) are explanatory views showing a joint structure used for connecting optical fibers that transmit light in the film thickness measurement device 120, such as the joint 2927 in fig. 29 (B).

Fig. 33 (a) is a perspective view of the joint structure. The optical fibers are connected by inserting the plug 3302 into the connector 3301. The connector 3301 is formed by fixing one wire 3311 on the light output side by a cable mounter 3312, connecting the cable mounter 3312 to an adapter 3313, and connecting the adapter 3313 to a cylindrical member 3314.

The plug 3302 has a structure in which a plurality of input-side wires 3321 are bundled, and the entire bundled wires are covered with a resin. The resin is protected by a cylindrical member 3322 made of stainless steel. By distributing the bundled wires by the number of branches, the optical fiber used for connection between the connector 2927 and the optical fiber switch 2926 can be branched.

Fig. 33 (B) shows a cross-sectional view of the joint. The wire 3311 includes a cladding layer, a core, and a cladding layer. Length L of insertion adaptor 3313 of cable mounter 3312 ₁ Predetermined according to a predetermined specification. The front end of the cable mounting apparatus 3312 is aligned with the wire 3311Is fixed. A margin length L on the side of the adaptor 3313 in the case where the cable mounter 3312 is inserted into the adaptor 3313 ₂ And is also predetermined according to a prescribed specification.

Here, as shown in fig. 33 (B), when light is emitted from the wire 3311, the light is emitted from the tip of the wire 3311 at a predetermined emission angle. In one example, the emission direction is set to 0 degree, and the emission angle is set to 11 to 13 degrees. Therefore, when the tip position of the plug 3302 is at the position 3341, light enters the wire near the center of the plug 3302, but light does not enter the wire located on the outer periphery side of the plug 3302. On the other hand, when the tip position of the plug 3302 is at the position 3343, light is incident on the entire wire rod, but light is also irradiated to the stainless steel cylindrical member of the plug 3302, and the intensity of light incident on the wire rod becomes small. Therefore, the tip position of the plug 3302 is such that light is incident on the entire wire as at position 3342, and light is not irradiated to the outside of the wire, whereby light loss occurring at the time of connecting the optical fibers can be suppressed.

Therefore, in the joint 2927 according to the present embodiment, as shown in fig. 33 (C), a spacer 3361 that abuts the tip of the inserted plug 3302 is disposed inside the cylindrical member. In fig. 33 (C), the spacer 3361 is shown as a cylindrical member, but may be made of cylindrical glass. In this case, the thickness of the spacer 3361 may be determined in consideration of refraction of light at the incident surface. In this way, in the joint structure of the present embodiment, the spacer 3361 is arranged to keep the distance between the output-side wire material and the plurality of input-side wire materials constant.

The incident surface of spacer 3361 on the wire 3311 side may be convex, so that the lens effect may be obtained by spacer 3361. This allows light to enter perpendicularly to the cross section of the tip of the plug 3302.

< other embodiment >

The present invention can also be realized by supplying a program for realizing one or more functions of the above-described embodiments to a system or an apparatus via a network or a storage medium, and by reading out the program by one or more processors in a computer of the system or the apparatus and executing the processing of the program. The present invention can also be realized by a circuit (for example, ASIC) that realizes one or more functions.

The present invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the claims are appended for disclosure of the scope of the invention.

Claims (14)

1. A film deposition apparatus, comprising:

a film forming chamber provided with a film forming unit for forming a film on a substrate;

a conveying member that conveys the substrate between a film formation position of the substrate and a receiving position of the substrate while holding the substrate on a lower side; and

a measuring member that measures a thickness of a film formed on the substrate held by the conveying member.

2. The film forming apparatus according to claim 1,

the measuring unit measures film thicknesses at a plurality of positions of the substrate by moving the transport unit holding the substrate.

3. The film forming apparatus according to claim 1,

the film forming apparatus further includes a transfer robot that holds and transfers the substrate on an upper side of the hand,

the transport member receives the substrate transported to the receiving position by the transport robot and transports the substrate to the film forming position,

the transport member transports the substrate on which film formation is performed by the film formation unit from the film formation position to the receiving position.

4. The film forming apparatus according to claim 3,

the film forming apparatus further comprises a plurality of receiving positions,

the transfer robot transfers the substrate to the plurality of receiving positions.

5. The film forming apparatus according to claim 4,

the film forming chamber is provided with a plurality of film forming positions,

the film deposition apparatus includes a plurality of transport members for transporting substrates to the plurality of film deposition positions,

the transfer robot transfers the substrate to the receiving positions corresponding to the plurality of transfer members.

6. The film forming apparatus according to claim 1,

the measuring member measures a thickness of a film formed on the substrate at the film formation position.

7. The film forming apparatus according to claim 1,

the measuring member measures a thickness of a film formed on the substrate at a position within the film forming chamber and between the film forming position and the receiving position.

8. The film forming apparatus according to claim 1,

the measuring member measures a thickness of a film formed on the substrate at a position outside the film forming chamber and between the film forming position and the receiving position.

9. The film forming apparatus according to claim 1,

the measuring member measures the thickness of the film by irradiating the substrate with laser light.

10. The film forming apparatus according to claim 5,

the measuring member measures the thickness of the film by irradiating the substrate with laser light,

the measuring member includes a light source, and an output of the light source is branched so that the laser beam is irradiated to the substrate by each of the plurality of transport members.

11. The film forming apparatus according to claim 10,

in order to branch the output from the light source, the film formation apparatus includes a joint structure for inputting light output from the wire on one output side to the wires on the plurality of input sides.

12. The film forming apparatus according to claim 11, wherein,

the joint structure includes a spacer that keeps a distance between the one output-side wire and the plurality of input-side wires constant.

13. The film forming apparatus according to claim 10,

the branched output from the light source is input to a measuring device for measuring intensity.

14. The film forming apparatus according to claim 9, wherein,

the film forming apparatus includes a black member arranged to sandwich the transport member together with a light projecting portion of the laser beam in an irradiation direction of the laser beam.

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