CN115954304B - Wafer drying and lifting method - Google Patents
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- CN115954304B CN115954304B CN202310241893.8A CN202310241893A CN115954304B CN 115954304 B CN115954304 B CN 115954304B CN 202310241893 A CN202310241893 A CN 202310241893A CN 115954304 B CN115954304 B CN 115954304B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a wafer drying and lifting method, which comprises the following steps: the wafer is positioned in the liquid level, the supporting mechanism drives the wafer to rise at the rising speed of V1, the lifting mechanism is positioned below the wafer and does not contact the wafer, and the rising speed of the lifting mechanism is V2, so that V2 is less than or equal to V1; the wafer top is close to the liquid level, the supporting mechanism is separated from the wafer in a state of keeping the wafer rising, and the lifting mechanism rises to contact the wafer so as to continuously push the wafer upwards to extend out of the liquid level; the wafer continues to rise under the drive of the lifting mechanism until the wafer is completely separated from the liquid surface. The supporting mechanisms and the lifting mechanisms on two sides are independently controlled, so that different lifting modes of two stages are realized; the front half section of the wafer lifting process is driven by the supporting mechanisms at the two sides, so that the contact area of the wafer is large, the placement of the wafer is stable, and the abrasion loss is small; the supporting base of the second-half lifting mechanism is formally inserted in the wafer lifting process, the working time of each wafer supporting base is halved, the loss is low, and the service life is long; frequent replacement of the sole is not required.
Description
Technical Field
The invention belongs to the field of semiconductor integrated circuit chip manufacturing, and particularly relates to a wafer drying and lifting method.
Background
Chemical mechanical planarization is one of the integrated circuit processes. With the development of technology, the requirements for the processing technology will be increased. Meanwhile, chemical mechanical planarization belongs to a wet process in the wafer processing process, and a large amount of grinding liquid and different chemical reagents are used in the whole process, so that the wafer needs to be cleaned and dried at the end of the process to remove particles attached to the surface of the wafer, and the wafer can enter the next process.
In the existing integrated circuit devices, the conventional drying method is spin-drying, which removes water attached to the surface of the wafer using centrifugal force generated at a high rotational speed. However, due to the difference of the materials of the wafers and the influence of the surface patterns, the drying method sometimes causes water stain residues, so that the amount of particles of the whole wafer exceeds the standard.
One new drying method that has emerged in recent years is the use of the marangoni effect. The method removes water attached to the surface of the wafer by utilizing the surface tension gradient difference, and can effectively reduce the possibility of water stain residues and particles attached to the surface of the wafer. The method needs to lift the wafer out of the liquid level by supporting the bottom of the wafer, and the contact area between the bottom of the wafer and the wafer is as small as possible in order to ensure that no water stain remains on the bottom of the wafer; in addition, the support is soaked in water for a long time, and plastic materials are usually selected for ensuring corrosion resistance. The prior method has the advantages that the support bottom plays a supporting role in the process from the immersion of the wafer in the bottom of the liquid to the complete exposure of the liquid level, the contact area between the support bottom and the bottom of the wafer is small, the pressure is high, the support bottom is more stressed and is easy to wear, the material consumption is required to be frequently replaced, and otherwise, the precision of the lifting position is reduced; meanwhile, the technical process needs to ensure the level of the liquid level, the lifting force of an electric cylinder at the back of the box body is transmitted to the wafer through a magnet at present, the supporting base and the box body are extruded and slide with the box body under the action of the magnet, the lifting process has high resistance, the magnetic force is in non-rigid transmission, the risk of stalling or even falling sheets is caused, the abrasion of the supporting base and the inner wall of the box body can be caused in the sliding process, the transmission precision and the service life are influenced, and impurity particles can be generated; more importantly, under the actual working condition, the machine needs to ensure long-time stable operation, frequently changes the bottom supporting part and corrects the position, so that the maintenance time of the machine is greatly increased, the operation efficiency of the machine at the front and back channels of the production line is influenced, and huge economic loss is caused.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides the wafer drying and lifting method which prolongs the service life of the lifting mechanism and has good wafer drying effect.
The technical scheme adopted for solving the technical problems is as follows: the wafer drying and lifting method comprises the following steps of: the wafer is positioned in the liquid level, the supporting mechanism drives the wafer to rise at the rising speed of V1, the lifting mechanism is positioned below the wafer and does not contact the wafer, and the rising speed of the lifting mechanism is V2, so that V2 is less than or equal to V1;
the wafer top is close to the liquid level, the supporting mechanism is separated from the wafer in a state of keeping the wafer rising, and the lifting mechanism rises to contact the wafer so as to continuously push the wafer upwards to extend out of the liquid level;
the wafer continues to rise under the drive of the lifting mechanism until the wafer is completely separated from the liquid surface.
Further, the rising speed of the supporting mechanism when the supporting mechanism is separated from the wafer is V11, and the rising speed of the lifting mechanism when the supporting mechanism contacts the wafer is V21, so that the speed difference between V21 and V11 is more than or equal to 5mm/s.
Further, the rising speed of the supporting mechanism is reduced to a stop so as to separate from the wafer.
Further, the wafer is positioned in the liquid level, the supporting mechanism drives the wafer to ascend and comprises a first stage and a second stage, the supporting mechanism drives the wafer to ascend at a uniform speed in the first stage, and the supporting mechanism drives the wafer to ascend at a reduced speed in the second stage.
Further, the lifting mechanism drives the wafer to extend out of the liquid level, and the lifting mechanism comprises a third stage and a fourth stage, wherein the lifting mechanism drives the lifting speed of the wafer to be reduced in the third stage, and the lifting mechanism drives the lifting speed of the wafer to be increased in the fourth stage.
Further, in the fourth stage, the acceleration of the lifting mechanism driving the wafer to rise is more than or equal to 20mm/s 2 。
Further, in the third stage, the rate at which the wafer lift speed is reduced is in the form of a plurality of dog-legs.
Further, the supporting mechanism comprises a substrate with a wafer clamping groove, a mounting seat arranged on the side face of the substrate, and a roll shaft movably arranged on the mounting seat, wherein a first groove is formed in the drying box body in the height direction, and the roll shaft can move up and down along the first groove.
Further, the roll shaft rolls or slides in the first groove. Further, the lifting mechanism comprises a sliding part, a rotating shaft movably arranged on the sliding part and a support bottom, a second groove is formed in the drying box body along the height direction, and the rotating shaft can move up and down along the second groove.
Further, the support bottom is made of plastic materials.
Further, the support comprises a main body and a tip integrally arranged at the end part of the main body, wherein the width of the tip is 0.1-0.6mm, and the included angle of the cross section of the tip is 20-45 degrees.
Further, the top of the support bottom is straight or crescent, the maximum depth of the crescent is 0.2-1mm, and the top surface of the straight is a plane or a circular angle surface.
The invention provides a wafer drying and lifting method based on a marangoni effect, wherein an implementation structure adopts a multi-module combined lifting mode, so that the working time of a bottom support of a lifting mechanism is shortened, the service life of the bottom support is prolonged, the loss is reduced, and the maintenance time is saved; rolling fit can be adopted between the supporting mechanism and the drying box body and between the lifting mechanism and the drying box body, so that lifting resistance is reduced and abrasion is reduced; the support bottom can be designed in a crescent shape, so that stability of supporting the wafer is improved, and slipping is prevented. The invention can reduce the loss of the whole transmission mechanism, improve the stability of device transmission and avoid the influence of impurity particles generated by friction on the process environment while meeting the process flow based on the marangoni effect.
The invention has the advantages that 1) the supporting mechanisms and the lifting mechanisms at two sides are independently controlled, so as to realize different lifting modes at two stages; 2) The front half section of the wafer lifting process is driven by the supporting mechanisms at the two sides, the working range of the supporting mechanisms is limited to be within the liquid level, the contact area of the wafer is large, the placement of the wafer is stable, and the abrasion loss is small; the supporting base of the second-half lifting mechanism is formally inserted in the wafer lifting process, the working time of each wafer supporting base is halved, the loss is low, and the service life is long; 3) The support bottom does not need to be frequently replaced, and the drying device can ensure long-time stable operation, so that the operation efficiency of the front and back channels of the production line is not reduced; 4) The third stage adopts multi-stage deceleration, which can ensure that the adhering water on the surface of the wafer can be completely taken away under the action of the surface tension; 5) In the fourth stage, the wafer rises rapidly, and the last accumulated water at the lower end of the wafer can be taken away by means of surface tension; 6) The supporting mechanism bears the formation of the part lifted by the wafer, so that the loss of the supporting base of the lifting mechanism in each technological process is reduced, the service life of the supporting base is prolonged, and the maintenance and replacement frequency is reduced; 7) The speed difference between the supporting mechanism and the lifting mechanism is set when the supporting mechanism and the lifting mechanism are connected, so that the wafer can be better connected while the service life of the supporting mechanism is prolonged in the continuous lifting process; 8) The multistage deceleration in the third stage can obtain a smooth deceleration drying effect, reduce the connection difficulty of the supporting mechanism and the lifting mechanism, ensure the continuous rising of the wafer and avoid the residue of impurity particles caused by the midway stopping of the wafer; 9) The roller shaft of the supporting mechanism is in rolling fit or sliding fit with the first groove in the drying box body, the rotating shaft of the lifting mechanism is in rolling fit or sliding fit with the second groove in the drying box body, the resistance is low, the abrasion is less, and the generation of impurity particles is reduced; 10 The crescent top can prevent the crystal from falling off, and the stable supporting effect of the supporting bottom on the crystal circle is ensured; 11 The driving mechanism is positioned outside the environment, and the lifting force is provided by the magnet, so that the generation of motion pollution is reduced.
Drawings
FIG. 1 is an internal schematic view of a wafer drying and lifting apparatus of the present invention, in an initial state, in which the support mechanism contacts the wafer and the lifting mechanism does not contact the wafer.
Fig. 2 is an enlarged view of the structure at a in fig. 1.
Fig. 3 is a cross-sectional view of fig. 1.
FIG. 4 is an internal schematic view of the wafer drying and lifting apparatus of the present invention, in a raised state, with the support mechanism contacting the wafer and the lifting mechanism not contacting the wafer.
Fig. 5 is an enlarged view of the structure at B in fig. 4.
FIG. 6 is an internal schematic view of the wafer drying and lifting apparatus of the present invention, in a raised state, wherein the support mechanism does not contact the wafer and the lifting mechanism contacts the wafer.
Fig. 7 is an enlarged view of the structure at C in fig. 6.
Fig. 8 is a schematic view of a supporting mechanism in the present invention.
Fig. 9 is a schematic diagram of a partial cooperation structure of the supporting mechanism and the drying box in the present invention.
FIG. 10 is a schematic view of a lifting mechanism according to the present invention.
Fig. 11 is a schematic diagram of a partial cooperation structure of the lifting mechanism and the drying box in the invention.
Fig. 12 is a front view of the shoe of the present invention with the tip being planar.
Fig. 13 is a side view of the midsole of the present invention.
Fig. 14 is a front view of the shoe of the present invention, with rounded tips.
FIG. 15 is a side view of the midsole of the present invention with the tip being crescent shaped.
FIG. 16 is a graph of the position of the wafer lift-off process in accordance with the present invention.
Fig. 17 is a graph showing the speed profile of the support mechanism and the lifting mechanism of the present invention.
The device comprises a 1-wafer, a 2-supporting mechanism, a 21-substrate, a 211-wafer clamping groove, a 22-mounting seat, a 23-roll shaft, a 3-lifting mechanism, a 31-sliding piece, a 32-rotating shaft, a 33-supporting base, a 331-main body, a 332-tip, a 4-drying box body, a 41-first groove, a 411-convex part, a 412-groove body, a 413-vertical track, a 42-second groove and a 43-liquid level.
Detailed Description
In order to make the present invention better understood by those skilled in the art, the following description will make clear and complete descriptions of the technical solutions of the embodiments of the present invention with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
The wafer drying and lifting device comprises a drying box body 4 with an opening at the top, a wafer 1, supporting mechanisms 2 positioned at two sides of the wafer 1, and a lifting mechanism 3 positioned below the wafer 1 and in the middle of the supporting mechanisms 2 at two sides.
As shown in fig. 8 and 9, the supporting mechanism 2 includes a base 21 with a wafer clamping groove 211, a mounting seat 22 provided on a side surface of the base 21, and a roller 23 movably provided on the mounting seat 22, a first groove 41 is provided in the drying box 4 along a height direction thereof, the roller 23 can move up and down along the first groove 41, specifically, the roller 23 rolls or slides in the first groove 41, thereby restricting the offset of the supporting mechanism 2 in a horizontal direction.
In this embodiment, the base 21 is circular, a recessed wafer clamping groove 211 is formed in the thickness direction of the base 21, and the mounting base 22 includes two parallel bases fixedly connected to the back of the base 21, and each base is movably provided with two roller shafts 23. Specifically, the roller shaft 23 and the base body may be connected by a bearing, so that the roller shaft 23 may rotate relative to the mounting base 22. In other embodiments, the number of the roller shafts 23 may be arbitrary, and is not particularly limited.
In this embodiment, the first groove 41 includes a protrusion 411 with an i-shaped cross section, and a slot 412 located at two sides of the protrusion 411, a vertical track 413 is formed on a side wall of the protrusion 411 facing the slot 412, the roller 23 moves in the vertical track 413, and the mounting seat 22 is inserted into the slot 412.
As shown in fig. 10 and 11, the lifting mechanism 3 includes a sliding member 31, a rotating shaft 32 movably disposed on the sliding member 31, and a supporting base 33, and a second groove 42 is provided in the drying box 4 along the height direction thereof, the rotating shaft 32 can move up and down along the second groove 42, specifically, the rotating shaft 32 rolls or slides in the second groove 42, thereby restricting the displacement of the sliding member 31 in the horizontal direction.
In this embodiment, the cross section of the sliding member 31 is U-shaped, two sides of the sliding member are movably provided with two rotating shafts 32, and the rotating shafts 32 and the sliding member 31 can be connected through bearings, so that the rotating shafts 32 can rotate relative to the sliding member 31. In other embodiments, the number of shafts 32 may be any, and is not particularly limited.
In this embodiment, the second groove 42 has the same structure as the first groove 41, and includes a protrusion with an i-shaped cross section, and a groove body located at two sides of the protrusion, wherein a vertical track is formed on the protrusion towards the side wall of the groove body, the rotating shaft 32 moves in the vertical track, and the sliding member 31 is inserted into the groove body.
The supporting mechanism 2 and the lifting mechanism 3 are respectively fixed at positions through the magnet on the back of the drying box body 4, the magnet is connected with the motor and the transmission mechanism, and when the transmission mechanism is used for driving the magnet to move, the supporting mechanism 2 and the lifting mechanism 3 can move, namely, the roll shaft 23 of the supporting mechanism 2 moves in the first groove 41, and the rotating shaft 32 of the lifting mechanism 3 moves in the second groove 42.
As shown in fig. 12 to 15, the base 33 is made of plastic material, specifically, hydrophilic (quartz, ceramic) material or hydrophobic (PEEK, polysulfone, PVDF) material. The support 33 comprises a main body 331 and a tip 332 integrally arranged at the top end of the main body 331, the tip 332 is in a crisscross structure when contacting with the side wall of the wafer 1, the width of the tip 332 is 0.1-0.6mm, that is, s is 0.1-0.6mm in fig. 12, and the tip 332 can be a plane or a round angle; the included angle of the cross section of the tip 332 is 20-45 degrees, i.e., alpha is 20-45 degrees in fig. 12 and 14; the tip 332 may be flat at the top or may be a crescent with a crescent-shaped bottom end at a height of 0.2-1mm from the top, i.e., h in FIG. 15 is 0.2-1mm. The crescent top can prevent wafer 1 landing, guarantees the firm bearing effect of support base 33 to wafer 1.
The drying box body 4 is filled with ultra-clean water with a level 43 for realizing the marangoni effect, and the wafer 1 is completely immersed below the level 43 in the initial stage. At this time, the wafer 1 is fixed by the two side supporting mechanisms 2 to avoid falling off the wafer, and the top part of the bottom support 33 of the middle lifting mechanism 3 is lower than the lower edge of the wafer 1 and is not contacted with the wafer 1, as shown in fig. 1-3. I.e. the support mechanisms 2 on the two sides are stressed and the middle lifting mechanism 3 is not stressed in the initial stage.
In the first half of the lifting process of the wafer 1, before the two side supporting mechanisms 2 reach the upper limit (the upper limit is below the liquid level), the lifting process of the wafer 1 is driven by the two side supporting mechanisms 2, the middle lifting mechanism 3 also moves upwards at the same time, and the top of the supporting base 33 is always lower than the lower edge of the wafer 1 and is not in contact with the wafer 1, as shown in fig. 4 and 5. Of course, the lifting mechanism 3 may also be stationary.
In the latter half of the lifting process of the wafer 1, the two side supporting mechanisms 2 stop lifting after reaching the upper limit, and the middle lifting mechanism 3 lifts the wafer 1 upwards or continuously upwards, at this time, the wafer 1 is driven by the middle lifting mechanism 3, as shown in fig. 6 and 7, until reaching the set height completely beyond the liquid level 43.
The wafer drying and lifting method comprises the following steps of:
as shown in fig. 16, in order to ensure the drying effect while avoiding the particle impurities from remaining on the surface of the wafer 1, the wafer 1 is lifted continuously.
Firstly, the drying box 4 is filled with liquid, the wafer 1 is positioned in the liquid level, the supporting mechanism 2 drives the wafer 1 to rise at two sides of the wafer 1, the rising speed of the wafer 1 is V1, the lifting mechanism 3 is positioned below the wafer 1 and is not in contact with the wafer 1, in other words, the wafer 1, the supporting mechanism 2 and the lifting mechanism 3 are all positioned in the liquid level, only the supporting mechanism 2 plays a role of driving the wafer 1 to rise, the lifting mechanism 3 does not play a role of driving the wafer 1 to rise, and the rising speed is V2, so that V2 is less than or equal to V1.
Specifically, in this embodiment, v1=v2, only the two side supporting mechanisms 2 lift the wafer 1, and during the lifting process of the wafer 1, the middle lifting mechanism 3 is not in contact with the bottom of the wafer 1 all the time, and the relative position remains unchanged.
Secondly, the top of the wafer 1 approaches the liquid level, but does not extend out of the liquid level yet, the supporting mechanism 2 breaks away from the wafer 1 in a state of keeping the wafer 1 rising, and the lifting mechanism 3 rises to contact with the wafer 1, so that the wafer 1 is continuously pushed upwards to extend out of the liquid level; here, even if the supporting mechanism 2 is separated from the wafer 1, the wafer 1 does not stop rising during the process of the connection between the supporting mechanism 2 and the lifting mechanism 3, and the wafer 1 is in a continuously rising state; specifically, when the rising speed of the supporting mechanism 2 is V11 and the rising speed of the lifting mechanism 3 is V21 when the supporting mechanism 2 is separated from the wafer 1, the speed difference between the V21 and the V11 is more than or equal to 5mm/s. The speed difference between V21 and V11 can be flexibly adjusted according to specific working conditions, so long as the speed difference is more than or equal to 5mm/s.
More specifically, during the detachment of the support mechanism 2 from the wafer 1, the rising speed of the support mechanism 2 on both sides is reduced to a stop just before the support mechanism 2 on both sides reaches the upper limit (the upper limit is located below the liquid surface 43), thereby achieving the detachment of the wafer 1.
In this embodiment, the supporting mechanism 2 drives the wafer 1 to rise includes a first stage i and a second stage ii, and the supporting mechanism 2 drives the wafer 1 to rise at a constant speed in the first stage i, at this time, the wafer 1 is completely immersed below the liquid level 43 until the wafer starts to be exposed out of the water surface; in the second stage II, the supporting mechanism 2 drives the wafer 1 to rise in a decelerating manner, the wafer 1 gradually exposes to the water surface, and in order to ensure the drying effect of the wafer 1, the rising speed gradually decreases as the time of exposing to the water surface increases, as shown in FIG. 17. The speed of the middle lifting mechanism 3 is set according to the actual working condition requirement in the second stage II, so that the middle lifting mechanism can be contacted with the bottom of the wafer 1 when the supporting mechanisms 2 on two sides are completely stopped, the wafer 1 is further pushed to rise continuously, and the rising process of the wafer 1 is guaranteed to be free of stop. The second stage II speed is characterized by: the speed of the two side supporting mechanisms 2 is always smaller than that of the middle lifting mechanism 3, namely V21 is larger than or equal to V11, and V21-V11 is larger than or equal to 5mm/s.
In this embodiment, the lifting mechanism 3 drives the wafer 1 to extend out of the liquid surface, and the wafer 1 is only supported by the support base 33, which includes a third stage iii in which the lifting speed of the wafer 1 driven by the lifting mechanism 3 is reduced, and a fourth stage iv in which the lifting speed of the wafer 1 driven by the lifting mechanism 3 is increased. More specifically, in the third stage III, the rising speed of the wafer 1 is reduced at a plurality of fold lines, and in the fourth stage IV, the rising speed of the wafer 1 driven by the lifting mechanism 3 is more than or equal to 20mm/s 2 Therefore, when the wafer 1 completely leaves the water surface, the wafer 1 rises rapidly, and the last accumulated water at the lower end of the wafer 1 can be taken away by means of surface tension. In the fourth stage IV, the middle lifting mechanism 3 rapidly accelerates to rise until the wafer 1 completely leaves the water surface, the bottom of the wafer 1 is supported by the support base 33 and moves out of the water surface, and no accumulated water at the bottom of the wafer 1 can be ensured.
Then, the wafer 1 is driven by the lifting mechanism 3 to continue to rise until the wafer 1 is completely separated from the liquid surface.
The foregoing detailed description is provided to illustrate the present invention and not to limit the invention, and any modifications and changes made to the present invention within the spirit of the present invention and the scope of the appended claims fall within the scope of the present invention.
Claims (12)
1. The wafer drying and lifting method is characterized by comprising the following steps of:
the wafer is positioned in the liquid level, the supporting mechanism drives the wafer to rise at the rising speed of V1, the lifting mechanism is positioned below the wafer and does not contact the wafer, and the rising speed of the lifting mechanism is V2, so that V2 is less than or equal to V1;
the wafer top is close to the liquid level, the supporting mechanism breaks away from the wafer in a state of keeping the wafer rising, the rising speed of the supporting mechanism is reduced to be stopped so as to break away from the wafer, and the lifting mechanism rises to contact the wafer so as to continuously push the wafer upwards to extend out of the liquid level;
the wafer continues to rise under the drive of the lifting mechanism until the wafer is completely separated from the liquid surface.
2. The wafer dry lifting method of claim 1, wherein: the rising speed of the supporting mechanism when the supporting mechanism is separated from the wafer is V11, and the rising speed of the lifting mechanism when the supporting mechanism contacts the wafer is V21, so that the speed difference between V21 and V11 is more than or equal to 5mm/s.
3. The wafer dry lifting method of claim 1, wherein: the wafer is positioned in the liquid level, the supporting mechanism drives the wafer to ascend and comprises a first stage and a second stage, the supporting mechanism drives the wafer to ascend at a uniform speed in the first stage, and the supporting mechanism drives the wafer to ascend at a reduced speed in the second stage.
4. The wafer dry lifting method of claim 1, wherein: the lifting mechanism drives the wafer to extend out of the liquid level and comprises a third stage and a fourth stage, wherein the lifting mechanism drives the lifting speed of the wafer to be reduced in the third stage, and the lifting mechanism drives the lifting speed of the wafer to be increased in the fourth stage.
5. The wafer dry lifting method of claim 4, wherein: in the fourth stage, the acceleration of the lifting mechanism for driving the wafer to rise is more than or equal to 20mm/s 2 。
6. The wafer dry lifting method of claim 4, wherein: in the third stage, the rate at which the wafer lift speed is reduced is in the form of a plurality of dog-legs.
7. The wafer dry lifting method of claim 1, wherein: the supporting mechanism comprises a substrate with a wafer clamping groove, a mounting seat arranged on the side face of the substrate, and a roll shaft movably arranged on the mounting seat, wherein a first groove is formed in the drying box body along the height direction, and the roll shaft can move up and down along the first groove.
8. The wafer dry lifting method of claim 7, wherein: the roll shaft rolls or slides in the first groove.
9. The wafer dry lifting method of claim 1, wherein: the lifting mechanism comprises a sliding part, a rotating shaft movably arranged on the sliding part and a bottom supporting part, a second groove is formed in the drying box body along the height direction, and the rotating shaft can move up and down along the second groove.
10. The wafer dry lifting method of claim 9, wherein: the support bottom is made of plastic materials.
11. The wafer dry lifting method of claim 9, wherein: the support comprises a main body and a tip integrally arranged at the end part of the main body, wherein the width of the tip is 0.1-0.6mm, and the included angle of the cross section of the tip is 20-45 degrees.
12. The wafer dry lifting method of claim 11, wherein: the top of the support bottom is straight or crescent, the maximum depth of the crescent is 0.2-1mm, and the top surface of the straight is a plane or a circular angle surface.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002009034A (en) * | 2000-06-26 | 2002-01-11 | Dainippon Screen Mfg Co Ltd | Substrate-treating device |
| WO2023273950A1 (en) * | 2021-06-28 | 2023-01-05 | 北京北方华创微电子装备有限公司 | Semiconductor process device and wafer transmission system thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11317390A (en) * | 1998-05-06 | 1999-11-16 | Dan Clean Product:Kk | Substrate drying method |
| US20040200409A1 (en) * | 2002-12-16 | 2004-10-14 | Applied Materials, Inc. | Scrubber with integrated vertical marangoni drying |
| CN111092036B (en) * | 2020-03-23 | 2020-07-14 | 杭州众硅电子科技有限公司 | Wafer cleaning and drying device |
| CN113345821B (en) * | 2021-08-06 | 2021-11-16 | 杭州众硅电子科技有限公司 | Wafer cleaning and drying method and mechanism |
| CN114001526B (en) * | 2021-11-01 | 2022-09-30 | 华海清科股份有限公司 | Wafer lifting and drying method and wafer drying device |
| CN217361546U (en) * | 2022-03-10 | 2022-09-02 | 上海新昇半导体科技有限公司 | Drying device and polishing system |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002009034A (en) * | 2000-06-26 | 2002-01-11 | Dainippon Screen Mfg Co Ltd | Substrate-treating device |
| WO2023273950A1 (en) * | 2021-06-28 | 2023-01-05 | 北京北方华创微电子装备有限公司 | Semiconductor process device and wafer transmission system thereof |
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