CN115954273A - Gas-phase iodine-doped metal oxide thin film transistor and preparation method thereof - Google Patents
Gas-phase iodine-doped metal oxide thin film transistor and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a gas-phase iodine-doped metal oxide thin film transistor and a preparation method thereof, belonging to the technical field of semiconductor materials and devices. The post-treatment doping technology based on iodine can control the electrical performance of the material by controlling the exposure time of the metal oxide film and the thin film transistor in the sealing device filled with iodine vapor, is simpler and easier to realize than the existing doping technology in the material composition or film forming process, and has important significance for the research of a new generation of thin film transistors.
Description
Technical Field
The invention belongs to the technical field of semiconductor materials and devices, and particularly relates to a gas-phase iodine-doped metal oxide thin film transistor and a preparation method thereof.
Background
Metal oxide semiconductors have been used as active channel materials in thin film transistors due to their excellent charge carrier mobility, high optical transmission in the visible range, excellent chemical stability, and versatility in processing. Such as zinc oxide, indium zinc oxide, and indium gallium zinc oxide, have been widely studied and used. And metal oxide semiconductor-based thin film transistors have been used in various electronic applications such as electronic memory devices, chemical sensors, and active matrix displays. In order to realize the diversified applications in the new generation of electronic device industry, the development of a technology capable of controlling the electrical properties of a substance is urgently required. Therefore, studies on the influence of the composition ratio of binary, ternary, and quaternary materials, photodecomposition post-treatment, dopant technology, and the like have been attracting attention.
The doping technology can control and adjust the electrical characteristics of the oxide semiconductor material and overcome the dependence on the material. Currently, among the researches on the non-metal ion doped metal oxide semiconductor, the research on the doping of iodine is the most extensive. In the research on iodine doping of metal oxide semiconductors based on solution processes, iodic acid is often used as a dopant and mixed with a metal oxide precursor solution at the early stage. After the metal oxide semiconductor material based on the solution process is subjected to iodine doping, a high-temperature sintering process is usually required, and due to the easy sublimation characteristic of iodine, the iodine-doped metal oxide thin film is greatly influenced by temperature in the sintering process, and the higher the sintering temperature is, the lower the iodine content is, so that the doping amount of iodine cannot be accurately controlled. Based on the above, the invention provides the iodine doping post-treatment method, which does not need to be mixed with the metal oxide precursor solution in the early stage, is not influenced by the sintering temperature of the metal oxide material, and can accurately control the doping amount of iodine only by controlling the doping time in the later stage.
Disclosure of Invention
In order to solve the defects of the prior art and to distinguish from the doping mode which is widely researched at present and is carried out in the material composition and film forming process, the invention provides a gas-phase iodine-doped metal oxide thin film transistor and a preparation method thereof.
The technical scheme provided by the invention provides a gas-phase iodine-doped metal oxide thin film transistor which sequentially comprises a substrate, a dielectric layer, an active layer and a metal electrode from bottom to top, wherein iodine ions are doped in the active layer.
Further, the substrate is made of any one of common glass, silicon wafers and conductive glass, the metal electrode is made of any one of Al, ag, au, W, ta and Pt, and the active layer is made of a metal oxide material with a nano structure.
Further, the dielectric layer, the active layer and the metal electrode adopt any one preparation process of a solution method, a vacuum deposition method or a magnetron sputtering method.
The technical scheme of the invention provides a preparation method of a gas-phase iodine-doped metal oxide thin film transistor, which adopts the metal oxide thin film transistor and comprises the following steps:
step 2: respectively carrying out ultrasonic cleaning treatment on the P-type silicon substrate by adopting acetone, isopropanol and deionized water, drying by adopting nitrogen, and finally carrying out secondary cleaning treatment on the silicon nitride surface by adopting a plasma cleaning machine to obtain a clean silicon nitride surface with high hydrophilicity;
and step 3: coating the indium oxide precursor solution on the surface of the silicon nitride by adopting a spin coating mode to obtain a metal oxide active layer, wherein the metal oxide active layer is of an amorphous microcrystalline structure, and the root-mean-square roughness is 0.240 to 0.248 nm;
and 4, step 4: placing the metal oxide active layer obtained by spin coating in an atmospheric environment for preliminary low-temperature pre-baking, then placing in a muffle furnace for high-temperature annealing at the temperature of 100-400 ℃ to obtain a metal oxide film, namely an indium oxide film, and performing physical property characterization;
and 5: depositing an aluminum film on the surface of the metal oxide film subjected to physical property characterization in a vacuum deposition mode to form a metal electrode, so as to obtain a metal oxide film transistor;
step 6: and (3) inversely placing the metal oxide thin film transistor subjected to the electrical property measurement on the top of the sealing device filled with iodine vapor for iodine doping.
Further, the thickness of the metal electrode is 10 to 200 nanometers, and the thickness of the metal oxide film is 20 to 100 nanometers.
Further, the time of the metal oxide thin film transistor in the sealing device filled with iodine vapor is controlled, the doping amount of iodine is controlled, and therefore the electrical performance of the transistor is controlled.
Further, the time for doping iodine is 0 to 10 seconds.
The beneficial technical effects are as follows:
the invention provides a method for doping iodine on a solution process type metal oxide semiconductor in a gas phase mode based on the special properties of easy iodine sublimation and good physical and chemical stability, breaks through the traditional doping process mode, overcomes the dependence on semiconductor materials at present, and is not limited by the temperature of high-temperature sintering. The doping amount of iodine can be controlled only by controlling the exposure time of the metal oxide thin film transistor in iodine vapor, so that the purpose of adjusting the electrical property of the material is achieved, and the method has important significance for the research of a new generation of thin film transistors.
Drawings
Fig. 1 is a schematic structural diagram of a gas-phase iodine-doped metal oxide thin film transistor provided by the present invention.
Wherein, 100-substrate; 101-a dielectric layer; 102-an active layer; 103-metal electrodes.
Fig. 2 is an XPS chart of the metal oxide thin film prepared in comparative example 1.
Fig. 3 is an XPS chart of the metal oxide thin film prepared in example 1.
Fig. 4 is an XPS chart of the metal oxide thin film prepared in example 2.
Fig. 5 is an output characteristic curve of the metal oxide thin film transistor prepared in comparative example 1.
Fig. 6 is an output characteristic curve of the metal oxide thin film transistor prepared in example 1.
Fig. 7 is an output characteristic curve of the metal oxide thin film transistor prepared in comparative example 2.
Fig. 8 is an output characteristic curve of the metal oxide thin film transistor prepared in example 2.
Fig. 9 is a transfer characteristic curve of the metal oxide thin film transistor prepared in comparative example 1.
Fig. 10 is a transfer characteristic curve of the metal oxide thin film transistor prepared in example 1.
Fig. 11 is a transfer characteristic curve of the metal oxide thin film transistor prepared in comparative example 2.
Fig. 12 is a transfer characteristic curve of the metal oxide thin film transistor prepared in example 2.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in detail with reference to the accompanying drawings and embodiments. The examples described below with reference to the figures are of an illustrative nature and are not to be considered as limiting the invention. It is to be understood that in the description of the present invention, references to orientations or positional relationships indicated as top, bottom, upper, lower, left, right, etc. are based on the orientations or positional relationships shown in the drawings and are only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and therefore, are not to be considered as limiting the present invention.
To further illustrate the technical solution of the present invention, the following detailed description will be given by a plurality of specific examples.
Example 1:
a gas-phase iodine-doped metal oxide thin film transistor, as shown in FIG. 1, comprises a substrate 100, a dielectric layer 101, an active layer 102 and a metal electrode 103 from bottom to top in sequence, wherein the dielectric layer 101 is made of silicon nitride, and the active layer 102 is doped with iodine ions.
The preparation method of the gas-phase iodine-doped metal oxide thin film transistor comprises the following steps of:
step 2: respectively carrying out ultrasonic cleaning treatment on the P-type silicon substrate for 15 minutes and 30 minutes by using acetone and isopropanol, cleaning the isopropanol remained on the surface by using deionized water so as to ensure that the silicon nitride surface is clean and has no organic substances, drying after drying by using nitrogen, removing the water and the gas with oxidability or reducibility remained on the surface of the silicon nitride substrate, and finally carrying out secondary cleaning treatment on the silicon nitride surface by using a plasma cleaning machine so as to obtain the highly hydrophilic and clean silicon nitride surface;
and step 3: placing a clean substrate in a spin coater, and spin-coating an indium oxide precursor solution on the surface of silicon nitride at 5000 r/min for 35 seconds in a spin coating mode to obtain a metal oxide active layer, wherein the metal oxide active layer is in an amorphous microcrystalline structure and has the root-mean-square roughness of 0.240 to 0.248 nm;
and 4, step 4: placing the metal oxide active layer obtained by spin coating on a hot table, prebaking at 80 ℃ for 5 minutes, then placing the metal oxide active layer in a muffle furnace, annealing at 300 ℃ for 60 minutes to obtain a metal oxide film, namely an indium oxide film, and carrying out physical property characterization;
and 5: depositing an aluminum film on the surface of the metal oxide film after physical property characterization to form a metal electrode to obtain a metal oxide film transistor 1, wherein the length L =80 micrometers and the width W =2000 micrometers of a conductive channel of the metal electrode;
step 6: and (3) inversely placing the metal oxide thin film transistor subjected to the electrical performance measurement on the top of a sealing device filled with iodine vapor, and carrying out doping post-treatment for 5 seconds to obtain the metal oxide thin film transistor 2.
Comparative example 1:
comparative example 1 is a metal oxide thin film transistor 1 obtained without step 6 in example 1.
Example 2:
a gas-phase iodine-doped metal oxide thin film transistor, as shown in FIG. 1, comprises a substrate 100, a dielectric layer 101, an active layer 102 and a metal electrode 103 from bottom to top in sequence, wherein the dielectric layer 101 is made of silicon nitride, and the active layer 102 is doped with iodine ions.
The preparation method of the gas-phase iodine-doped metal oxide thin film transistor comprises the following steps of:
step 2: carrying out ultrasonic cleaning treatment on the P-type silicon substrate for 15 minutes and 30 minutes by adopting acetone and isopropanol, cleaning the isopropanol remained on the surface by using deionized water to ensure that the silicon nitride surface is clean and has no organic substances, drying the silicon nitride surface after drying by adopting nitrogen, removing the water remained on the surface of the silicon nitride substrate and gas with oxidability or reducibility, and finally carrying out secondary cleaning treatment on the silicon nitride surface by adopting a plasma cleaning machine to obtain the highly hydrophilic and clean silicon nitride surface;
and step 3: putting the clean substrate in a spin coater, spin-coating the indium oxide precursor solution for 35s at 5000 rpm by adopting a spin coating mode, and coating the indium oxide precursor solution on the surface of silicon nitride to obtain a metal oxide active layer, wherein the metal oxide active layer is of an amorphous microcrystalline structure, and the root-mean-square roughness is 0.240-0.248 nm;
and 4, step 4: placing the metal oxide active layer obtained by spin coating on a hot table, prebaking at 80 ℃ for 5 minutes, then placing the metal oxide active layer in a muffle furnace, annealing at 300 ℃ for 60 minutes to obtain a metal oxide film, namely an indium oxide film, and carrying out physical property characterization;
and 5: depositing an aluminum film on the surface of the metal oxide film after physical property characterization to form a metal electrode, and obtaining the metal oxide film transistor 3, wherein the length L =80 micrometers and the width W =2000 micrometers of a conductive channel of the metal electrode;
step 6: and (3) inversely placing the metal oxide thin film transistor subjected to the electrical performance measurement on the top of the sealing device filled with iodine vapor, and carrying out doping post-treatment for 10 seconds to obtain a metal oxide thin film transistor 4.
Comparative example 2:
comparative example 2 is a metal oxide thin film transistor 3 obtained without step 6 in example 2.
To better illustrate the characteristics of the resulting materials and transistors, the materials and transistors of examples 1 and 2 and comparative examples 1 and 2 were subjected to corresponding performance tests:
as shown in fig. 2 to 4, the chemical structures and compositions of the metal oxide thin films of comparative example 1 and examples 1 and 2 were investigated using an X-ray photoelectron spectrometer (XPS), and the chemical structure and composition of the metal oxide thin film of comparative example 2 were substantially the same as those of comparative example 1. According to the change of oxygen element O1s peak in the metal oxide film, oxygen vacancy (O) in the metal oxide is shown II ) And metal hydroxide (O) III ) The relative peak area of the related sub-peak is reduced, which shows that the method for doping the metal oxide film with iodine can effectively control the oxygen vacancy content in the metal oxide material, and more iodine ions can be doped into the film along with the prolonging of the exposure time of the metal oxide thin film transistor in iodine vapor, thereby playing the role of reducing the concentration of electron carriers.
Fig. 5 to 6 are output characteristic curves of the thin film transistors in comparative example 1 and example 1, respectively, in which the output characteristic curves of the thin film transistor in example 1 are substantially the same since the drain current is small when the gate voltage is 0V and 5V, as shown in fig. 6; fig. 7 to 8 are output characteristic curves of the tfts in comparative example 1 and example 2, respectively, wherein as shown in fig. 8, when the gate voltage is 0V and 5V, the output characteristic curves of the tft in example 2 are substantially the same because the drain current is small; FIGS. 9 to 10 are transfer characteristic curves of the thin film transistors in comparative example 1 and example 1, respectively; fig. 11 to 12 are transfer characteristic curves of the thin film transistors in comparative example 1 and example 2, respectively. The result shows that the doping of iodine can reduce the drain current of the metal oxide thin film transistor, reduce the electron mobility and generate right deviation of the grid voltage; and the electrical performance of the metal oxide thin film transistor changes more with the extension of the doping time.
It is to be understood that the above description is not intended to limit the present invention, and the present invention is not limited to the above examples, and those skilled in the art may make modifications, alterations, additions or substitutions within the spirit and scope of the present invention.
Claims (7)
1. A gas-phase iodine-doped metal oxide thin film transistor is characterized by sequentially comprising a substrate, a dielectric layer, an active layer and a metal electrode from bottom to top, wherein iodine ions are doped in the active layer.
2. The gas-phase iodine-doped metal oxide thin film transistor according to claim 1, wherein the substrate is made of any one of common glass, silicon wafer and conductive glass, the metal electrode is made of any one of Al, ag, au, W, ta and Pt, and the active layer is made of a nano-structured metal oxide material.
3. The gas-phase iodine-doped metal oxide thin film transistor according to claim 1, wherein the dielectric layer, the active layer and the metal electrode are prepared by any one of a solution method, a vacuum deposition method or a magnetron sputtering method.
4. A method for preparing a gas phase iodine doped metal oxide thin film transistor, wherein the metal oxide thin film transistor of any one of claims 1 to 3 is adopted, comprising the following steps:
step 1; preparing a precursor solution containing indium ions and a P-type silicon substrate with a silicon nitride dielectric layer;
step 2: respectively carrying out ultrasonic cleaning treatment on the P-type silicon substrate by adopting acetone, isopropanol and deionized water, drying by adopting nitrogen, and finally carrying out secondary cleaning treatment on the silicon nitride surface by adopting a plasma cleaning machine to obtain a clean silicon nitride surface with high hydrophilicity;
and 3, step 3: coating the indium oxide precursor solution on the surface of silicon nitride by adopting a spin coating mode to obtain a metal oxide active layer, wherein the metal oxide active layer is in an amorphous microcrystalline structure, and the root-mean-square roughness is 0.240 to 0.248 nm;
and 4, step 4: placing the metal oxide active layer obtained by spin coating in an atmospheric environment for preliminary low-temperature pre-baking, then placing in a muffle furnace for high-temperature annealing at the temperature of 100-400 ℃ to obtain a metal oxide film, namely an indium oxide film, and performing physical property characterization;
and 5: depositing an aluminum film on the surface of the metal oxide film subjected to physical property characterization in a vacuum deposition mode to form a metal electrode, thereby obtaining a metal oxide film transistor;
and 6: and (3) inversely placing the metal oxide thin film transistor subjected to the electrical property measurement on the top of the sealing device filled with iodine vapor for iodine doping.
5. The method for preparing the gas-phase iodine-doped metal oxide thin film transistor according to claim 4, wherein the thickness of the metal electrode is 10 to 200 nanometers, and the thickness of the metal oxide thin film is 20 to 100 nanometers.
6. The method of claim 4, wherein the time of the metal oxide thin film transistor in a sealed device filled with iodine vapor is controlled to control the doping amount of iodine, thereby controlling the electrical performance of the transistor.
7. The method for preparing a gas-phase iodine-doped metal oxide thin film transistor according to claim 6, wherein the iodine doping time is 0 to 10 seconds.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009065180A1 (en) * | 2007-11-23 | 2009-05-28 | The University Of Queensland | Non-metal doped metal oxide nanosheets and method of production thereof |
| US20110284848A1 (en) * | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| CN103311128A (en) * | 2013-06-13 | 2013-09-18 | 北京大学深圳研究生院 | Self-aligning metal oxide thin film transistor and manufacturing method thereof |
| CN105355793A (en) * | 2015-11-06 | 2016-02-24 | 昆明物理研究所 | Near-infrared visible-light OPV iodine-doped photovoltaic organic detector |
| CN105460930A (en) * | 2016-01-04 | 2016-04-06 | 河南工程学院 | Method and device for controlling and representing graphene band gap |
| CN106169480A (en) * | 2015-05-22 | 2016-11-30 | 乐金显示有限公司 | There is the thin film transistor base plate of high reliability metal oxide semiconductor material |
| US20190027605A1 (en) * | 2017-07-19 | 2019-01-24 | Asm Ip Holding B.V. | Method for depositing a group iv semiconductor and related semiconductor device structures |
| CN110718468A (en) * | 2019-09-26 | 2020-01-21 | 深圳大学 | Samarium-doped metal oxide thin film transistor and preparation method and application thereof |
| CN113223968A (en) * | 2021-04-12 | 2021-08-06 | 华南理工大学 | In-situ fluorine-doped metal oxide thin film, preparation method thereof and thin film transistor |
| CN113539801A (en) * | 2021-06-23 | 2021-10-22 | 华南理工大学 | Metal oxide nitrogen doping method and metal oxide thin film transistor |
-
2023
- 2023-03-13 CN CN202310231083.4A patent/CN115954273B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009065180A1 (en) * | 2007-11-23 | 2009-05-28 | The University Of Queensland | Non-metal doped metal oxide nanosheets and method of production thereof |
| US20110284848A1 (en) * | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| CN103311128A (en) * | 2013-06-13 | 2013-09-18 | 北京大学深圳研究生院 | Self-aligning metal oxide thin film transistor and manufacturing method thereof |
| CN106169480A (en) * | 2015-05-22 | 2016-11-30 | 乐金显示有限公司 | There is the thin film transistor base plate of high reliability metal oxide semiconductor material |
| CN105355793A (en) * | 2015-11-06 | 2016-02-24 | 昆明物理研究所 | Near-infrared visible-light OPV iodine-doped photovoltaic organic detector |
| CN105460930A (en) * | 2016-01-04 | 2016-04-06 | 河南工程学院 | Method and device for controlling and representing graphene band gap |
| US20190027605A1 (en) * | 2017-07-19 | 2019-01-24 | Asm Ip Holding B.V. | Method for depositing a group iv semiconductor and related semiconductor device structures |
| CN110718468A (en) * | 2019-09-26 | 2020-01-21 | 深圳大学 | Samarium-doped metal oxide thin film transistor and preparation method and application thereof |
| CN113223968A (en) * | 2021-04-12 | 2021-08-06 | 华南理工大学 | In-situ fluorine-doped metal oxide thin film, preparation method thereof and thin film transistor |
| CN113539801A (en) * | 2021-06-23 | 2021-10-22 | 华南理工大学 | Metal oxide nitrogen doping method and metal oxide thin film transistor |
Non-Patent Citations (1)
| Title |
|---|
| 王春涛;张文魁;黄辉;陶新永;甘永平;: "碘掺杂TiO_2薄膜电极制备和光电性能研究", 功能材料, no. 08 * |
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