CN115943447A - 纹路识别装置以及显示装置 - Google Patents

纹路识别装置以及显示装置 Download PDF

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Publication number
CN115943447A
CN115943447A CN202180001579.1A CN202180001579A CN115943447A CN 115943447 A CN115943447 A CN 115943447A CN 202180001579 A CN202180001579 A CN 202180001579A CN 115943447 A CN115943447 A CN 115943447A
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layer
substrate base
recognition device
base plate
light
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CN202180001579.1A
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English (en)
Inventor
张洁
蔡寿金
程锦
孔德玺
李成
王迎姿
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BOE Technology Group Co Ltd
Beijing BOE Sensor Technology Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Sensor Technology Co Ltd
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Publication of CN115943447A publication Critical patent/CN115943447A/zh
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06VIMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12Fingerprints or palmprints
    • G06V40/13Sensors therefor
    • G06V40/1318Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14623Optical shielding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14636Interconnect structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14678Contact-type imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • H01L27/14627Microlenses

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Multimedia (AREA)
  • Human Computer Interaction (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

一种纹路识别装置和显示装置,该纹路识别装置具有多个像素单元(PX),且包括衬底基板(10)、驱动电路层(20)、第一电极层和感光元件层;驱动电路层(20)设置在衬底基板(10)上,第一电极层设置在驱动电路层(20)的远离衬底基板(10)的一侧,感光元件层设置在第一电极层的远离衬底基板(10)的一侧,多个像素单元(PX)中至少一个包括设置在驱动电路层(20)中的像素驱动电路、设置在第一电极层中的第一电极(E1)以及设置在感光元件层中的多个彼此间隔的感光元件(P),像素驱动电路与第一电极(E1)电连接,多个感光元件(P)设置在第一电极(E1)的远离衬底基板(10)的一侧,通过第一电极(E1)电连接至像素驱动电路。该纹路识别装置具有更好的纹路识别效果。

Description

PCT国内申请,说明书已公开。

Claims (26)

  1. PCT国内申请,权利要求书已公开。
CN202180001579.1A 2021-06-22 2021-06-22 纹路识别装置以及显示装置 Pending CN115943447A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2021/101562 WO2022266847A1 (zh) 2021-06-22 2021-06-22 纹路识别装置以及显示装置

Publications (1)

Publication Number Publication Date
CN115943447A true CN115943447A (zh) 2023-04-07

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ID=84543954

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CN202180001579.1A Pending CN115943447A (zh) 2021-06-22 2021-06-22 纹路识别装置以及显示装置

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US (1) US20240185631A1 (zh)
CN (1) CN115943447A (zh)
DE (1) DE112021005019T5 (zh)
WO (1) WO2022266847A1 (zh)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5132102B2 (ja) * 2006-08-01 2013-01-30 キヤノン株式会社 光電変換装置および光電変換装置を用いた撮像システム
KR101980234B1 (ko) * 2012-10-30 2019-05-21 삼성디스플레이 주식회사 유기 발광 표시 장치와, 이의 제조 방법
CN106654067A (zh) * 2017-01-11 2017-05-10 京东方科技集团股份有限公司 触控基板及其制备方法、显示装置
KR20210069778A (ko) * 2019-12-03 2021-06-14 삼성디스플레이 주식회사 광 센서 및 광 센서를 포함하는 표시 장치
TWI731572B (zh) * 2020-02-06 2021-06-21 友達光電股份有限公司 感光裝置以及感測指紋的方法
CN111653599B (zh) * 2020-06-17 2023-04-07 京东方科技集团股份有限公司 指纹识别显示面板和显示装置
CN112001337B (zh) * 2020-08-27 2024-07-12 京东方科技集团股份有限公司 一种指纹识别基板及显示装置

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DE112021005019T5 (de) 2023-07-27
US20240185631A1 (en) 2024-06-06
WO2022266847A1 (zh) 2022-12-29

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