CN115939931A

CN115939931A - Semiconductor laser control system

Info

Publication number: CN115939931A
Application number: CN202211732389.XA
Authority: CN
Inventors: 葛济铭; 陈泳屹; 赵天野; 张德晓; 徐岩
Original assignee: Jiguang Semiconductor Technology Co ltd
Current assignee: Jiguang Semiconductor Technology Co ltd
Priority date: 2022-12-30
Filing date: 2022-12-30
Publication date: 2023-04-07

Abstract

The invention relates to the field of semiconductor laser control, in particular to a semiconductor laser control system which can provide 3 paths of voltage-controlled voltage source module output and 4 paths of voltage-controlled current source module output and has various voltage and current output combinations, different types of lasers can be driven by upper computer control, the voltage-controlled voltage source and the voltage-controlled current source in design are relatively independent, the size and frequency of each path of voltage and current can be independently controlled, the characteristics of continuous output of voltage and current, good output synchronism and the like are realized by a specific processing circuit, a microprocessor control module taking a high-performance DSP operation processor as a core implements control of the current value of each path of voltage-controlled current source and the voltage value of the voltage-controlled voltage source through table lookup calculation, and a semiconductor laser can be controlled to realize nanosecond-level fast wavelength tuning.

Description

Semiconductor laser control system

Technical Field

The invention relates to the field of semiconductor laser control, in particular to a semiconductor laser control system.

Background

The semiconductor laser has the advantages of compact structure, good beam quality, long service life, stable performance and the like, and is used for developing the fist feet in the fields of communication, material processing and manufacturing, military, medical treatment and the like. Laser devices have a wide range of applications. Particularly, as a key optoelectronic device in an Optical Coherence Tomography (OCT), the performance of a semiconductor laser is directly related to core technical indexes such as imaging resolution and detectable section depth of an OCT system.

The four-section wide tuning fast frequency sweep semiconductor laser comprises: the device comprises a semiconductor optical amplification unit (SOA), two passive cavity areas A, a laser area B, a phase adjustment area C and a power amplification area D. The ultra-wide sweep frequency range of the laser chip is realized, meanwhile, enough small dynamic line width and enough high side mode suppression ratio can be still ensured, and the purpose of further improving the output power can be achieved by changing the injection current of the power amplification area D. Therefore, the four-section wide-tuning fast frequency-sweeping semiconductor laser can provide a high-performance laser light source and an application system environment for a new generation of OCT system.

The tuning realization principle of the present tunable semiconductor laser mainly comprises: three types of voltage/current tuning, temperature tuning and mechanical tuning. The four-section wide tuning fast frequency sweeping semiconductor laser adopts a voltage/current tuning mode. The wavelength adjustment is realized by changing the bias voltage of the reverse PN junctions of the two passive cavity regions A, and when the applied voltage is changed, the carrier accumulation density at the reverse PN junctions can be influenced, so that the refractive index of the material in the passive cavity regions A can be adjusted, and the adjustable dressing reflection spectrum can be obtained. The lengths of the two passive cavity areas A can be different, so that the peak-peak values of the dressing reflection spectrum are slightly different, a vernier effect can be generated, and single longitudinal mode feedback is carried out on the laser of the laser area B. The voltage of the two passive cavity regions A is respectively changed, and the vernier effect is utilized, so that the large-range tuning and the fast frequency sweeping work of the laser can be realized. The working principle of the phase adjusting region C is the same as that of the passive cavity regions A at the two ends, and the whole phase of the middle part is adjusted by changing the voltage applied to the two ends of the adjusting region C, so that the wavelength peak of the lasing wavelength can be matched with the lasing wavelength peak value pair selected by the passive cavity regions A at the two ends through the vernier effect, and the lasing line width is reduced.

However, the control wavelength of the existing tunable laser control system is not high and unstable in precision, and the existing tunable laser control system can not meet the use function of a four-section wide-tuning fast frequency-sweeping semiconductor laser, can not provide three independent voltage sources to control two passive cavity areas A and a phase adjustment area C at the same time, and can not provide three independent current sources to control a power amplifier D, a laser area B, a semiconductor optical amplification unit SOA and a semiconductor refrigeration chip control module, so that the problem needs to be solved urgently in the market at present.

Disclosure of Invention

In view of this, the embodiment of the present invention provides a semiconductor laser control system, which implements nanosecond-level fast wavelength tuning.

The semiconductor laser control system provided by the embodiment of the invention comprises a microprocessor control module, a plurality of paths of mutually independent DAC conversion modules, a plurality of paths of mutually independent voltage-controlled voltage source modules, a plurality of paths of mutually independent voltage-controlled current source modules, a plurality of paths of mutually independent ADC conversion modules, a plurality of paths of mutually independent voltage acquisition modules, a plurality of paths of mutually independent current acquisition modules, a temperature sampling feedback module and a communication module;

the microprocessor control module is communicated with an upper computer through the communication module, receives a control instruction of the upper computer to control the semiconductor laser to work and transmits working data information of the semiconductor laser back to the upper computer, wherein the semiconductor laser comprises a first passive cavity area, a second passive cavity area, a phase adjusting area, a laser area, a power amplifier and a semiconductor light amplifying unit;

the DAC conversion module is used for dividing voltage into analog voltage with target quantity according to a control instruction of the microprocessor control module, and the analog voltage is used for controlling a voltage-controlled voltage source module or a voltage-controlled current source module of the semiconductor laser;

the voltage-controlled voltage source module is used for changing output voltage according to different input voltage signals and controlling a passive cavity area and a phase adjusting area of the semiconductor laser by using the output voltage;

the voltage-controlled current source module is used for changing output current according to different input voltage signals, and the output current is used for controlling a power amplifier, a laser area and a semiconductor optical amplification unit of the semiconductor laser;

the ADC conversion module is used for converting the voltage signals and the current signals acquired by the voltage acquisition module and the current acquisition module into digital signals with target quantity and sending the digital signals to the microprocessor control module;

the current acquisition module is used for acquiring a current signal of the circuit, converting the current signal into a voltage signal and transmitting the voltage signal to the ADC conversion module;

the voltage acquisition module is used for acquiring a voltage signal of the circuit and transmitting the voltage signal to the ADC conversion module;

the temperature sampling feedback module is electrically connected with the microprocessor control module and is used for actually monitoring the temperature of the semiconductor laser;

the communication module is used for communicating the microprocessor control module with the upper computer.

As an optional scheme, the multiple mutually independent DAC conversion modules include 7 mutually independent DAC conversion modules, which are respectively a first DAC conversion module, a second DAC conversion module, a third DAC conversion module, a fourth DAC conversion module, a fifth DAC conversion module, a sixth DAC conversion module, and a seventh DAC conversion module;

the multiple independent voltage-controlled voltage source modules comprise 3 independent voltage-controlled voltage source modules which are respectively a first voltage-controlled voltage source module, a second voltage-controlled voltage source module and a third voltage-controlled voltage source module;

the multiple independent voltage-controlled current source modules are 3 independent voltage-controlled current source modules which are respectively a first voltage-controlled current source module, a second voltage-controlled current source module and a third voltage-controlled current source module;

the multiple paths of mutually independent ADC conversion modules comprise 7 paths of independent ADC conversion modules which are respectively a first ADC conversion module, a second ADC conversion module, a third ADC conversion module, a fourth ADC conversion module, a fifth ADC conversion module, a sixth ADC conversion module and a seventh ADC conversion module;

the multiple independent voltage acquisition modules are 3 independent voltage acquisition modules which are respectively a first voltage acquisition module, a second voltage acquisition module and a third voltage acquisition module;

the current acquisition modules which are mutually independent in multiple paths are 4 independent current acquisition modules which are respectively a first current acquisition module, a second current acquisition module, a third current acquisition module and a fourth current acquisition module.

As an optional scheme, the first DAC conversion module is connected to the semiconductor optical amplification unit through the first voltage-controlled current source module, and a first analog voltage signal output by the first DAC conversion module controls the first voltage-controlled current source module to output a first tuning current signal to tune the semiconductor optical amplification unit;

the second DAC conversion module is connected with the power amplifier through the second voltage-controlled current source module, and a second analog voltage signal output by the second DAC conversion module controls the second voltage-controlled current source module to output a second tuning current signal to tune the power amplifier;

the third DAC conversion module is connected with the first passive cavity region through the first voltage-controlled voltage source module, and a third analog voltage signal output by the third DAC conversion module controls the first voltage-controlled voltage source module to output a first tuning voltage signal to tune the first passive cavity region;

the fourth DAC conversion module is connected to the laser region through the third voltage-controlled current source module, and a fourth analog voltage signal output by the fourth DAC conversion module controls the third voltage-controlled current source module to output a third tuning current signal for tuning the laser region;

the fifth DAC conversion module is connected with the phase adjustment area through the second voltage-controlled voltage source module, and a fifth analog voltage signal output by the fifth DAC conversion module controls the second voltage-controlled voltage source module to output a second tuning voltage signal to tune the phase adjustment area;

the sixth DAC conversion module is connected to the second passive cavity through the third voltage-controlled voltage source module, and a sixth analog voltage signal output by the sixth DAC conversion module controls the third voltage-controlled voltage source module to output a third tuning voltage signal to tune the second passive cavity.

As an optional scheme, the microprocessor control module controls the first voltage-controlled current source to output a first current through the first DAC conversion module, the first current collection module collects the first current output by the first voltage-controlled current source and transmits a collected first current signal to the first ADC conversion module, and the first current collection module and the first ADC conversion module convert the first current signal into a first digital signal and transmit the first digital signal to the microprocessor control module;

the microprocessor control module controls the second voltage-controlled current source to output a second current through the second DAC conversion module, the second current acquisition module acquires the second current output by the second voltage-controlled current source and transmits an acquired second current signal to the second ADC conversion module, and the second current acquisition module and the second ADC conversion module convert the second current signal into a second digital signal and transmit the second digital signal to the microprocessor control module;

the microprocessor control module controls the first voltage-controlled voltage source to output a first voltage through the third DAC conversion module, the first voltage acquisition module acquires the first voltage output by the first voltage-controlled voltage source and transmits an acquired first voltage signal to the third ADC conversion module, and the first voltage acquisition module and the third ADC conversion module convert the first voltage signal into a third digital signal and transmit the third digital signal to the microprocessor control module;

the microprocessor control module controls the third voltage-controlled current source to output a third current through the fourth DAC conversion module, the third current collection module collects the third current output by the third voltage-controlled current source and transmits a collected third current signal to the fourth ADC conversion module, and the third current collection module and the fourth ADC conversion module convert the third current signal into a fourth digital signal and transmit the fourth digital signal to the microprocessor control module;

the microprocessor control module controls the second voltage-controlled voltage source to output a second voltage through the fifth DAC conversion module, the second voltage acquisition module acquires the second voltage output by the second voltage-controlled voltage source and transmits an acquired second voltage signal to the fifth ADC conversion module, and the second voltage acquisition module and the fifth ADC conversion module convert the second voltage signal into a fifth digital signal and transmit the fifth digital signal to the microprocessor control module;

the microprocessor control module controls the third voltage-controlled voltage source to output a third voltage through the sixth DAC conversion module, the third voltage acquisition module acquires the third voltage output by the third voltage-controlled voltage source and transmits an acquired third voltage signal to the sixth ADC conversion module, and the third voltage acquisition module and the sixth ADC conversion module convert the third voltage signal into a sixth digital signal and transmit the sixth digital signal to the microprocessor control module.

As an optional scheme, still including being used for gathering the thermistor of semiconductor laser temperature, being used for adjusting the semiconductor refrigeration piece of semiconductor laser temperature and being used for controlling the semiconductor refrigeration control module of semiconductor refrigeration piece work, seventh DAC conversion module control passes through semiconductor refrigeration control module with the semiconductor refrigeration piece electricity is connected, fourth electric current collection module with the semiconductor refrigeration piece electricity is connected, seventh ADC conversion module passes through fourth electric current collection module gathers the refrigeration control current of semiconductor refrigeration piece, thermistor with the semiconductor laser, the encapsulation of semiconductor refrigeration piece is as an organic whole, microprocessor control module passes through temperature sampling feedback module acquires the temperature of thermistor, temperature sampling feedback module passes through thermistor gathers the tube core temperature of semiconductor to give the measurement temperature value back to microprocessor control module, microprocessor control module according to the measurement temperature value control the refrigeration control current of voltage-controlled current source module adjustment semiconductor refrigeration piece carries out the refrigeration efficiency and adjusts.

As an optional scheme, the system further comprises a data storage module for storing control data of the control system and a heat dissipation module for dissipating heat of the control system and maintaining the control system in a constant temperature working environment, wherein the data storage module and the heat dissipation module are respectively electrically connected with the microprocessor control module.

As an optional scheme, the semiconductor refrigeration control module includes an H-bridge driving circuit, the H-bridge driving circuit is electrically connected to the semiconductor refrigeration chip, and the seventh DAC conversion module controls the power supply current of the H-bridge driving circuit to control the refrigeration efficiency of the semiconductor refrigeration chip.

As an optional scheme, the heat dissipation module is an air-cooled heat sink, and the air-cooled heat sink includes a fan, a heat dissipation fin, and a heat conduction pipe.

As an alternative, the microprocessor control module comprises a PGA programmable logic controller or an ARM processor.

As an optional scheme, the semiconductor laser is a four-segment wide-tuning fast frequency-sweeping semiconductor laser.

The semiconductor laser control system provided by the embodiment of the invention can provide 3 paths of voltage-controlled voltage source module outputs and 4 paths of voltage-controlled current source module outputs, has various voltage and current output combinations, can drive different types of lasers by the control of the upper computer 9, has the characteristics of relatively independent voltage-controlled voltage source and voltage-controlled current source in design, can realize the independent control of the magnitude and frequency of each path of voltage and current, realizes the continuous output of the voltage and the current, good output synchronism and the like by a specific processing circuit, and controls the current value of each path of voltage-controlled current source and the voltage value of the voltage-controlled voltage source by a microprocessor control module taking a high-performance DSP (digital signal processor) as a core through table lookup calculation, and can control the semiconductor laser to realize nanosecond-level fast wavelength tuning.

Drawings

Fig. 1 is a block diagram of a semiconductor laser control system according to an embodiment of the present invention;

fig. 2 is a schematic structural diagram of a temperature sampling feedback module in a semiconductor laser control system according to an embodiment of the present invention;

fig. 3 is a schematic structural diagram of a semiconductor chilling plate closed-loop temperature control function in a semiconductor laser control system according to an embodiment of the present invention.

Reference numerals are as follows: the system comprises a microprocessor control module 1, a temperature sampling feedback module 2, a communication module 3, a thermistor 4, a semiconductor refrigerating piece 5, a semiconductor refrigerating control module 6, a data storage module 7, a heat dissipation module 8, an upper computer 9, a Wheatstone bridge circuit 211, an instrument amplification circuit 212, an ADC (analog-to-digital converter) circuit 213 and a proportional integral circuit 214;

a first passive cavity region 11, a second passive cavity region 12, a phase adjusting region 13, a laser region 14, a power amplifier 15 and a semiconductor light amplifying unit 16;

a first DAC conversion module 21, a second DAC conversion module 22, a third DAC conversion module 23, a fourth DAC conversion module 24, a fifth DAC conversion module 25, a sixth DAC conversion module 26 and a seventh DAC conversion module 27;

a first voltage-controlled voltage source module 31, a second voltage-controlled voltage source module 32, and a third voltage-controlled voltage source module 33;

a first voltage-controlled current source module 41, a second voltage-controlled current source module 42, and a third voltage-controlled current source module 43;

a first ADC conversion module 51, a second ADC conversion module 52, a third ADC conversion module 53, a fourth ADC conversion module 54, a fifth ADC conversion module 55, a sixth ADC conversion module 56, and a seventh ADC conversion module 57;

a first voltage acquisition module 61, a second voltage acquisition module 62 and a third voltage acquisition module 63;

a first current collection module 71, a second current collection module 72, a third current collection module 73, and a fourth current collection module 74.

Detailed Description

In order to make those skilled in the art better understand the technical solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

The terms "first," "second," "third," "fourth," and the like in the description and in the claims, as well as in the drawings, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It will be appreciated that the data so used may be interchanged under appropriate circumstances such that the embodiments described herein may be implemented in other sequences than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

The semiconductor laser control system provided by the embodiment of the invention comprises a microprocessor control module 1, a plurality of paths of mutually independent DAC conversion modules, a plurality of paths of mutually independent voltage-controlled voltage source modules, a plurality of paths of mutually independent voltage-controlled current source modules, a plurality of paths of mutually independent ADC conversion modules, a plurality of paths of mutually independent voltage acquisition modules, a plurality of paths of mutually independent current acquisition modules, a temperature sampling feedback module 2 and a communication module 3;

microprocessor control module 1 passes through communication module 3 and host computer 9 communication, receipt host computer 9's control command control semiconductor laser work and with semiconductor laser's working data information passback extremely host computer 9, microprocessor control module 1 can include FPGA programmable logic controller or ARM treater and relevant auxiliary circuit, has powerful DSP arithmetic capability, and the control command of control semiconductor laser work can instruct example to adjust laser output power, adjust laser output phase place, adjust laser output wavelength, control semiconductor refrigeration piece 5 refrigeration temperature etc. does not restrict this.

In this embodiment, the semiconductor laser may include a first passive cavity region 11, a second passive cavity region 12, a phase adjustment region 13, a laser region 14, a power amplifier 15, and a semiconductor optical amplification unit 16, but it should be noted that the control system does not include the semiconductor laser, and connection and control relationships of components of the control system are only drawn here for convenience of description, and details are not described below.

The DAC conversion module is used for dividing voltage into analog voltage with target quantity according to the control instruction of the microprocessor control module 1, the analog voltage is used for controlling a voltage-controlled voltage source module or a voltage-controlled current source module of the semiconductor laser, the DAC conversion module can adopt a high-frequency DAC converter, specifically, 7 paths of mutually independent DAC conversion modules can be selected for use when controlling a four-section semiconductor laser, and the target quantity is 2 ¹⁴ Namely, the 16384,7 mutually independent DAC conversion modules can comprise more than 14-bit DAC conversion chips and peripheral circuits thereof, and an EMC filter circuit, and can divide 0-3.3V (or 0-5.5V) into not less than 16384 parts of analog voltage according to the instruction of the microprocessor control module 1, and the output analog voltage is used for controlling the voltage-controlled voltage source module or the voltage-controlled current source module.

The voltage-controlled voltage source module is used for changing output voltage according to different input voltage signals, and controlling a first passive cavity area 11, a second passive cavity area 12 and a phase adjusting area 13 of the semiconductor laser by using the output voltage, and the voltage-controlled voltage source module can comprise a precise operational amplifier circuit, a negative feedback circuit consisting of precise resistors, an MOS (metal oxide semiconductor) tube output circuit and an accelerating circuit;

the voltage-controlled current source module is used for changing output current according to different input voltage signals, the output current is used for controlling a power amplifier 15, a laser area 14 and a semiconductor optical amplification unit 16 of the semiconductor laser, and the voltage-controlled current source module can comprise a precise operational amplifier circuit, a negative feedback circuit consisting of precise resistors, an MOS (metal oxide semiconductor) tube output circuit and an accelerating circuit;

the ADC conversion module is used for converting the voltage signals and the current signals acquired by the voltage acquisition module and the current acquisition module into digital signals with target quantity, and sending the digital signals to the microprocessor control module 1, the ADC conversion module can adopt a high-frequency converter, specifically, the ADC conversion module can comprise an ADC conversion chip with more than 14 bits, a peripheral circuit and an integrated operational amplifier circuit, and the target quantity is 2 ¹⁴ 16384, the voltage signal and the current signal collected by the voltage collection module and the current collection module are converted into digital signals of 0-16384, and the digital signals are sent to the microprocessor control module 1.

The current acquisition module is used for acquiring current signals of a circuit where the current acquisition module is located, converting the current signals into voltage signals and transmitting the voltage signals to the ADC conversion module, and specifically, the current acquisition module can comprise a precision sampling resistor, a voltage follower, a differential operational amplifier, an instrument amplifier and an addition operational unit.

The voltage acquisition module is used for acquiring voltage signals of the circuit and transmitting the voltage signals to the ADC conversion module, and the voltage acquisition module can comprise a voltage follower, a differential operational amplifier, an instrument amplifier and an addition arithmetic unit.

As shown in fig. 2, the temperature sampling feedback module 2 is electrically connected to the microprocessor control module 1, and is configured to actually monitor the temperature of the semiconductor laser, and the temperature sampling feedback module 2 may include a wheatstone bridge circuit 211, an instrument amplifier circuit 212, a proportional-integral circuit 214, an ADC converter circuit 213, and an EMC filter circuit (not shown in the figure);

the communication module 3 is used for communicating the microprocessor control module 1 with the upper computer 9, the communication module 3 can transmit connectors of different signals, and the connectors comprise communication networks for converting RS-232 signals, RS-422/485 signals and the like, so that serial messages of driving, controlling and actuating components in a system architecture are compatible, and common technicians in the field can flexibly select the connectors, and the requirements of use scenes can be met without limitation.

The upper computer 9 can directly send out a computer of an operation command, so that the control system can be conveniently controlled and managed by workers, and an industrial personal computer can be adopted without limitation.

Referring to fig. 1, in the semiconductor laser control system provided in the embodiment of the present invention, taking a four-segment wide-tuning fast frequency-sweeping semiconductor laser as an example, each device of the semiconductor laser control system may have the following configuration so as to meet the control requirement, specifically, the multiple mutually independent DAC conversion modules include 7 mutually independent DAC conversion modules, which are respectively a first DAC conversion module 21, a second DAC conversion module 22, a third DAC conversion module 23, a fourth DAC conversion module 24, a fifth DAC conversion module 25, a sixth DAC conversion module 26, and a seventh DAC conversion module 27, the multiple mutually independent voltage-controlled voltage source modules include 3 mutually independent voltage-controlled voltage source modules, which are respectively a first voltage-controlled voltage source module 31, a second voltage-controlled voltage source module 32, and a third voltage-controlled voltage source module 33, the multiple mutually independent voltage-controlled current source modules are 3 mutually independent voltage-controlled current source modules, the voltage-controlled current source module comprises a first voltage-controlled current source module 41, a second voltage-controlled current source module 42 and a third voltage-controlled current source module 43, the multiple independent ADC conversion modules comprise 7 independent ADC conversion modules, namely a first ADC conversion module 51, a second ADC conversion module 52, a third ADC conversion module 53, a fourth ADC conversion module 54, a fifth ADC conversion module 55, a sixth ADC conversion module 56 and a seventh ADC conversion module 57, the multiple independent voltage acquisition modules comprise 3 independent voltage acquisition modules, namely a first voltage acquisition module 61, a second voltage acquisition module 62 and a third voltage acquisition module 63, the multiple independent current acquisition modules comprise 4 independent current acquisition modules, namely a first current acquisition module 71, a second current acquisition module 72, a third current acquisition module 72, a fourth voltage acquisition module 63, A third current-collecting module 73 and a fourth current-collecting module 74.

In some embodiments, the first DAC conversion module 21 is connected to the semiconductor optical amplifying unit 16 through the first voltage-controlled current source module 41, the first analog voltage signal output by the first DAC conversion module 21 controls the first voltage-controlled current source module 41 to output the first tuning current signal for tuning the semiconductor optical amplifying unit, the second DAC conversion module 22 is connected to the power amplifier 15 through the second voltage-controlled current source module 42, the second analog voltage signal output by the second DAC conversion module 22 controls the second voltage-controlled current source module 42 to output the second tuning current signal for tuning the power amplifier 15, the third DAC conversion module 23 is connected to the first passive cavity region 11 through the first voltage-controlled voltage source module 31, the third analog voltage signal output by the third DAC conversion module 23 controls the first voltage-controlled voltage source module 31 to output the first tuning voltage signal for tuning the first passive cavity region 11, the fourth DAC conversion module 24 is connected to the laser region 14 through the third voltage-controlled current source module 43, the fourth analog voltage signal output by the fourth DAC conversion module 24 controls the third voltage-controlled current source module 43 to output a third tuning current signal for tuning the laser region 14, the fifth DAC conversion module 25 is connected to the phase adjustment region 13 through the second voltage-controlled voltage source module 32, the fifth analog voltage signal output by the fifth DAC conversion module 25 controls the second voltage-controlled voltage source module 32 to output a second tuning voltage signal for tuning the phase adjustment region, the sixth DAC conversion module 26 is connected to the second passive cavity region 12 through the third voltage-controlled voltage source module 33, and the sixth analog voltage signal output by the sixth DAC conversion module 26 controls the third voltage-controlled voltage source module 33 to output a third analog voltage signal The triple tuning voltage signal tunes the second passive cavity region 12.

In some embodiments, the microprocessor control module 1 controls the first voltage-controlled current source to output a first current through the first DAC conversion module 21, the first current collection module 71 collects the first current output by the first voltage-controlled current source and transmits the collected first current signal to the first ADC conversion module 51, the first current collection module 71 and the first ADC conversion module 51 convert the first current signal into a first digital signal and transmit the first digital signal to the microprocessor control module 1, the microprocessor control module 1 controls the second voltage-controlled current source to output a second current through the second DAC conversion module 22, the second current collection module 72 collects the second current output by the second voltage-controlled current source and transmits the collected second current signal to the second ADC conversion module 52, the second current collection module 72 and the second ADC conversion module 52 convert the second current signal into a second digital signal and transmit the second digital signal to the microprocessor control module 1, the microprocessor control module 1 controls the first voltage-controlled voltage source to output a first voltage through the third DAC conversion module 23, the first voltage collection module 61 collects the first voltage output by the first voltage-controlled voltage source and transmits the collected first voltage signal to the third ADC conversion module 53, the first voltage collection module 61 and the third ADC conversion module 53 convert the first voltage signal into a third digital signal and transmit the third digital signal to the microprocessor control module 1, the microprocessor control module 1 controls the third voltage-controlled current source to output a third current through the fourth DAC conversion module 24, and the third current collection module 73 collects the third current output by the third voltage-controlled current source and transmits the collected third current to the microprocessor control module 1 The third current signal obtained by the collection is transmitted to the fourth ADC conversion module 54, the third current collection module 73 and the fourth ADC conversion module 54 convert the third current signal into a fourth digital signal and transmit the fourth digital signal to the microprocessor control module 1, the microprocessor control module 1 controls the second voltage-controlled voltage source to output a second voltage through the fifth DAC conversion module 25, the second voltage collection module 62 collects the second voltage output by the second voltage-controlled voltage source and transmits the collected second voltage signal to the fifth ADC conversion module 55, the second voltage collection module 62 and the fifth ADC conversion module 55 convert the second voltage signal into a fifth digital signal and transmit the fifth digital signal to the microprocessor control module 1, the microprocessor control module 1 controls the third voltage-controlled voltage source to output a third voltage through the sixth DAC conversion module 26, the third voltage collection module 63 collects the third voltage output by the third voltage-controlled voltage source and transmits the collected third voltage signal to the sixth ADC conversion module 56, and the third voltage collection module 63 and the sixth ADC conversion module 56 convert the third voltage signal into a sixth digital signal and transmit the sixth digital signal to the microprocessor control module 1.

As shown in fig. 3, in some embodiments, the temperature control device further includes a thermistor 4 for acquiring the temperature of the semiconductor laser, a semiconductor refrigeration chip 5 for adjusting the temperature of the semiconductor laser, and a semiconductor refrigeration control module 6 for controlling the semiconductor refrigeration chip 5 to work, the semiconductor refrigeration control module 6 is configured to adjust the refrigeration power of the semiconductor refrigeration chip 5 according to an instruction of the microprocessor control module 1, the seventh DAC conversion module 27 is configured to control the refrigeration control current of the semiconductor refrigeration chip 5 through the semiconductor refrigeration control module 6, the fourth current acquisition module 74 is electrically connected with the semiconductor refrigeration chip 5, the seventh ADC conversion module 57 is configured to acquire the refrigeration control current of the semiconductor refrigeration chip 5 through the fourth current acquisition module 74, the thermistor 4 is packaged with the semiconductor laser and the semiconductor refrigeration chip 5 into a whole, the microprocessor control module 1 acquires the temperature of the thermistor 4 through the temperature sampling feedback module 2, the temperature sampling feedback module 2 acquires the die temperature of the semiconductor laser through the thermistor 4 and feeds a measured temperature value back to the microprocessor control module 1, and the microprocessor control module 1 adjusts the refrigeration efficiency of the semiconductor refrigeration chip according to the measured temperature value.

In some embodiments, the semiconductor refrigeration control module 6 includes an H-bridge driving circuit, the H-bridge driving circuit is electrically connected to the semiconductor refrigeration plate 5, the voltage-variable current source module provides an output current, the voltage-controlled voltage source module provides an output voltage, and the seventh DAC conversion module 27 controls a supply current of the H-bridge driving circuit to control the refrigeration efficiency of the semiconductor refrigeration plate 5.

In some embodiments, the semiconductor laser control system further includes a data storage module 7 for storing control data of the control system and a heat dissipation module 8 for dissipating heat of the control system and maintaining the control system in a constant temperature working environment, where the data storage module 7 and the heat dissipation module 8 are electrically connected to the microprocessor control module 1, respectively, in this embodiment, the data storage module 7 may employ a FLASH memory, and a person skilled in the art may flexibly select the FLASH memory, which is not limited thereto.

In some embodiments, the heat dissipation module 8 is an air-cooled heat sink, and the air-cooled heat sink may include a fan, a heat sink, and a heat pipe, which can be flexibly selected by a person skilled in the art, and is not limited thereto.

Example 1

The semiconductor laser control system provided in the embodiment of the present invention can perform the following operations when performing the relation operation of the recording current and voltage combination with the output wavelength and power.

The microprocessor control module 1 changes the current of the voltage-controlled current source module and the voltage of the voltage-controlled voltage source module through the DAC conversion module, and further controls two passive cavity regions, a phase adjustment region 13, a laser region 14, a power amplifier 15 and a semiconductor optical amplification unit 16 of the four-segment laser, specifically, the first DAC conversion module 21 is connected with the semiconductor optical amplification unit 16 through the first voltage-controlled current source module 41, the first analog voltage signal output by the first DAC conversion module 21 controls the first voltage-controlled current source module 41 to output a first tuning current signal for tuning the semiconductor optical amplification unit, the second DAC conversion module 22 is connected with the power amplifier 15 through the second voltage-controlled current source module 42, the second analog voltage signal output by the second DAC conversion module 22 controls the second voltage-controlled current source module 42 to output a second tuning current signal for tuning the power amplifier 15, the third DAC conversion module 23 is connected with the first passive cavity region 11 through the first voltage-controlled current source module 31, the third DAC conversion module 23 controls the first voltage-controlled current source module 31 to output a second tuning current signal for tuning the DAC conversion module 24, the third DAC conversion module 23 controls the second voltage-controlled current source module 13 to output a fifth voltage-controlled voltage signal output by the DAC conversion module 32, the DAC conversion module 43 and the fourth DAC conversion module 14 outputs a fourth voltage-controlled current signal output a third DAC conversion module 32, and the DAC conversion module 32 outputs the fifth DAC conversion module 14 The phase adjustment region 13 is tuned, the sixth DAC conversion module 26 is connected to the second passive cavity region 12 through the third voltage controlled voltage source module 33, and a sixth analog voltage signal output by the sixth DAC conversion module 26 controls the third voltage controlled voltage source module 33 to output a third tuning voltage signal to tune the second passive cavity region 12.

The magnitude of the current value is represented by a 14-bit AD value, and each current adjustment range is 100 to 16000. The voltage value is represented by a 14-bit AD value, and the voltage regulation range is 100-16000. The voltage step of the two passive cavity regions is 50, the voltage step of the phase adjusting region 13 is 50, the injection current step of the laser region 14 is 50, the injection current step of the power amplifier 15D is 50, and the injection step current step of the semiconductor optical amplifying unit 16 is 50. In the step, the voltage or the current of any 5 control areas is fixed in turn, and the other current or voltage value is increased from large to small in sequence. When the voltage or current value of the control area of any five DAC conversion modules is fixed and the other voltage or current value is gradually changed, the output wavelength of the corresponding laser has repeatability and breakover jump. The voltage or current combinations of each control region corresponding to the same wavelength and the same power are provided with a plurality of groups. And (4) sorting and analyzing data, and sequentially recording the output wavelength and the power value of the laser corresponding to each current and voltage combination according to the wavelength from small to large and the power from small to large, wherein only one corresponding combination data is taken for the same wavelength and power combination.

Example 2

The semiconductor laser control system provided by the embodiment of the invention has an output power calibration function, and the following operations can be performed when the control system is used for calibrating the output current and voltage.

When the semiconductor laser is connected to the semiconductor laser control system and enters the calibration function, the microprocessor control module 1 controls the first voltage-controlled current source module 41 to output current through the first DAC conversion module 21, and the first current collection module 71 collects the current output by the first voltage-controlled current source module 41 and transmits the signal to the first ADC conversion module 51. The first current collection module 71 and the first ADC conversion module 51 convert the current signal into a digital signal and transmit the digital signal to the microprocessor control module 1.

The current output by the first voltage-controlled current source module 41 is calibrated with the value passed by the first ADC conversion module 51 to the microprocessor control module 1, for example: the DAC conversion chip in the first DAC conversion module 21 is 14 bits, the output voltage value is 0-5V, and the resolution is 0.3mV, i.e. when the micro control processor outputs 0 to the first DAC conversion module 21, the first DAC conversion module 21 outputs 0V to the first voltage controlled current source module 41, when the micro control processor module outputs 1 to the first DAC conversion module 21, the first DAC conversion module 21 outputs 0.3mV to the first voltage controlled current source module 41, the first ADC conversion module 51 measures 0-100mA, the ADC conversion chip is 14 bits (i.e. 2 bits) ¹⁴ 16384), resolution of 100 ÷ 16384=0.0061ma.

When the microprocessor control module 1 outputs X to the first DAC conversion module 21, the first ADC conversion module 51 outputs 16 (16 +0.0061=0.0976 ≈ to the microprocessor control module 1)

0.1 mA) when the calibration routine of the microprocessor control module 1 assumes that the first voltage controlled current source module 41 outputs 0.1mA when the microprocessor control module 1 outputs X to the first DAC conversion module 21. Similarly, the output current of the first voltage-controlled current source module 41 is calibrated by taking 0.1mA as a step value from 0mA to the maximum current of the semiconductor optical amplifying unit 16.

The microprocessor control module 1 controls the first voltage-controlled voltage source module 31 to output voltage through the third DAC conversion module 23, and the first voltage collecting module 61 collects the voltage output by the first voltage-controlled voltage source module 31 and transmits the signal to the third ADC conversion module 53. The third voltage acquisition module 63 and the third ADC conversion module 53 convert the voltage signal into a digital signal and transmit the digital signal to the microprocessor control module 1. For example: the DAC conversion chip in the third DAC conversion module 23 is 16 bits (65536), the output voltage value is 0-5V, and the resolution is 5+1000 ÷ 6536=0.076mV, i.e., when the micro control processor module outputs 0 to the third DAC conversion module 23, the third DAC conversion module 23 outputs 0V to the first voltage controlled voltage source module 31, and when the micro control processor module outputs 1 to the third DAC conversion module 23, the third DAC conversion module 23 outputs 0.076mV to the first voltage controlled voltage source. The third ADC conversion module 53 measures 0-5V, the ADC conversion chip is 16 bits (65536), and the resolution is 5+1000 ÷ 65536=0.076mV. When the microprocessor control module 1 outputs X to the third DAC conversion module 23, and when the third DAC conversion module 23 outputs 13 to the microprocessor control module 1 (13 +0.076=0.988 ≈ 1 mV), the calibration program of the microprocessor control module 1 considers that the third voltage-controlled voltage source module 33 outputs 1mV when the microprocessor control module 1 outputs X to the third DAC conversion module 23, and similarly, the voltage output by the voltage-controlled voltage source 1 is calibrated with a step value of 1mV from 0V until the maximum current of the second passive cavity region 12.

It can be understood that the output current value calibration and the like of the second voltage-controlled current source module 42, the third voltage-controlled current source module 43, and the semiconductor refrigeration control module 6 are performed with reference to the first voltage-controlled current source, and the output voltage value calibration and the like of the second voltage-controlled voltage source and the third voltage-controlled voltage source are performed with reference to the first voltage-controlled voltage source, which is not repeated herein.

Example 3

The semiconductor laser control system provided in the embodiment of the invention can perform the following operations when displaying the output current, voltage and power of each channel.

Referring to embodiment 2, the semiconductor laser control system includes a current collection module, a voltage collection module, and an ADC conversion module, and can collect the output current value of each voltage-variable current source, the output voltage value of the voltage-variable voltage source, and the output current value of the semiconductor refrigeration control module 6. Under the working condition of static output or low-speed frequency sweeping, the current acquisition module, the voltage acquisition module and the ADC conversion module can acquire the current value output by each voltage-variable current source, the voltage value output by the voltage-variable voltage source and the output current value of the semiconductor laser control module in real time and feed back data to the upper computer 9 operating system. Under the working condition of high-speed frequency sweeping, the real-time acquisition of the current acquisition module, the voltage acquisition module and the ADC conversion module influences the frequency sweeping speed, and the current and voltage acquisition function is closed at the moment. The values of the current output by each voltage-variable current source module, the voltage output by the voltage-variable voltage source module and the output current of the semiconductor refrigeration control module 6 are fed back to the upper computer 9 according to the values calibrated in the reference embodiment 2. Of course, in order to ensure the accuracy of the feedback data, the calibration operation of the output current and the output voltage according to embodiment 2 may be performed once before the high-speed frequency sweeping operation, and details are not repeated here.

Example 3

The semiconductor laser control system provided in the embodiment of the present invention may perform the following operations when performing temperature calibration of the semiconductor laser.

At present, most of semiconductor lasers adopt a thermistor 4 as a temperature sensor for monitoring the temperature of the semiconductor lasers, and the thermistor 4, a semiconductor refrigerating chip 5 and the semiconductor lasers are packaged together. The temperature measurement principle of the temperature sampling feedback module 2 of the semiconductor laser control system is that a thermistor 4 and other precision resistors in the semiconductor laser form a Wheatstone bridge circuit 211. When the temperature of the semiconductor laser changes, the resistance value of the thermistor 4 changes, resulting in a change in the potential of the wheatstone bridge circuit 211. The potential change signal is converted into a digital signal between 0 and 4096 through an instrument amplifying circuit, a proportional-integral circuit and an ADC (analog-to-digital converter) conversion circuit, the voltage signal is acquired by the temperature sampling feedback module 2, and the voltage signal is converted into a 12-bit digital signal corresponding to 0 to 4096. In order to realize accurate temperature control, a corresponding relation table between the voltage signal and the measured temperature can be established in advance.

In the calibration process of the thermistor 4, in order to avoid temperature measurement abnormality in the working process of the laser, the temperature calibration range measured by the thermistor 4 is necessarily larger than the storage temperature range of the semiconductor laser, the thermistor 4 is connected with a semiconductor control system through a lead, the thermistor 4 is placed in a constant temperature box, the temperature set value is the lowest temperature to be measured, after the temperature is kept for half an hour, the temperature is measured, the value displayed in the system at the moment is a certain value between 0 and 4096, and the value corresponds to the current measured temperature value. And (3) raising the temperature of the constant temperature box to 1 ℃, keeping the constant temperature for half an hour, then continuing to repeat the measurement process, and recording the corresponding relation between the measured temperature and the measured voltage. And performing the test in a circulating way until the set temperature in the constant temperature box is 10 ℃ higher than the upper limit of the storage temperature of the semiconductor laser, and finishing the calibration. The interval of the measured temperature data in the data table is 1 ℃, when the measured data is smaller than the required interval, the measured temperature value is calculated by a linear interpolation method, the temperature value is rounded to be accurate to 0.01 ℃, and the corresponding relation table between the sorted voltage signal and the measured temperature is stored in a data storage module 7 for later use.

Example 4

The semiconductor laser control system provided by the embodiment of the invention can perform the following operations when performing the closed-loop temperature control function of the semiconductor refrigerating sheet 5.

The emission wavelength of the semiconductor laser is closely related to the temperature of the tube core, the wavelength is lengthened due to the temperature rise, and in order to ensure the precision and the repeatability of the output wavelength of the semiconductor laser, the semiconductor laser tube core, the thermistor 4 and the semiconductor refrigerating piece 5 are packaged together, so that the semiconductor laser can work stably for a long time. The temperature sampling feedback module 2 collects the tube core temperature of the semiconductor laser through the thermistor 4 and feeds a measured temperature value back to the microprocessor control module 1, the microprocessor control module 1 performs PID calculation through an algorithm according to the sampling temperature, the seventh DAC converter module controls the voltage-variable current source module to supply power to the H-bridge drive circuit, and the H-bridge drive circuit is connected with the semiconductor refrigeration piece 5. The refrigerating efficiency of the semiconductor refrigerating sheet 5 is controlled by changing the power supply current of the H-bridge driving circuit, so that the semiconductor refrigerating sheet 5 is kept at a constant temperature.

When the system is just powered on, the stable data acquisition is delayed from several milliseconds to several seconds due to the reasons of system reset, stable signal acquisition delay of the thermistor 4 and the like, in order to ensure the stability of the system and avoid the current oscillation or overshoot of the semiconductor refrigerating sheet 5, the output current of the voltage-variable current source of the semiconductor refrigerating sheet 5 is controlled to be 0 when the system is just powered on or restarted, and the semiconductor refrigerating sheet 5 starts to normally work after the temperature acquisition data of the thermistor 4 is stable. If the thermal protection function is enabled, when the temperature acquired by the temperature acquisition feedback module for 5 times continuously is abnormal or exceeds the temperature range allowed to be used by the laser, the microprocessor control module 1 immediately controls the first DAC conversion module 211 to the sixth DAC conversion module 26 to output 0 voltage, stops the external output of the voltage-variable voltage source module and the voltage-variable current source module, and protects the semiconductor laser.

Example 5

The semiconductor laser control system provided in the embodiment of the present invention can perform the following operations at the time of wide tuning wavelength output.

When the semiconductor laser control system is started, the microprocessor control module 1 sends an instruction to call a corresponding relation table of bias voltage or current of each control area and wavelength and power of output light of the semiconductor laser, which is stored in the data storage module 7, the corresponding relation table is stored in a RAM of the microprocessor control module 1, a temperature calibration table is called at the same time, the microprocessor control module 1 communicates with the upper computer 9 through the communication module 3 to receive a control instruction sent by the upper computer 9, and the control instruction comprises parameters such as starting wavelength, stepping time, ending wavelength and the like of the output light of the four-section laser.

The microprocessor control module 1 writes a voltage or current control program for six control modules, i.e., two passive cavity regions, a phase adjusting region 13, a power amplifier 15, a laser region 14 and a semiconductor optical amplification unit 16, according to the control parameters in the received control instruction and the current and voltage combination and output wavelength and power correspondence table stored in the RAM. After the control program is written, the control system starts to control the four-section laser to emit light. And the microprocessor control module 1 sends digital-to-analog conversion instructions to the first DAC module 1 to the sixth DAC module through SPI communication and GPIO pins.

The first DAC conversion module 21 is connected to the semiconductor optical amplifying unit 16 through the first voltage-controlled current source module 41, the first analog voltage signal output by the first DAC conversion module 21 controls the first voltage-controlled current source module 41 to output the first tuning current signal for tuning the semiconductor optical amplifying unit 16, the second DAC conversion module 22 is connected to the power amplifier 15 through the second voltage-controlled current source module 42, the second analog voltage signal output by the second DAC conversion module 22 controls the second voltage-controlled current source module 42 to output the second tuning current signal for tuning the power amplifier 15, the third DAC conversion module 23 is connected to the first passive cavity region 11 through the first voltage-controlled voltage source module 31, and the third analog voltage signal output by the third DAC conversion module 23 controls the first voltage-controlled voltage source module 31 to output the first tuning voltage signal for tuning the first passive cavity region 11, the fourth DAC conversion module 24 is connected to the laser region 14 through the third voltage-controlled current source module 43, the fourth analog voltage signal output by the fourth DAC conversion module 24 controls the third voltage-controlled current source module 43 to output a third tuning current signal for tuning the laser region 14, the fifth DAC conversion module 25 is connected to the phase adjustment region 13 through the second voltage-controlled voltage source module 32, the fifth analog voltage signal output by the fifth DAC conversion module 25 controls the second voltage-controlled voltage source module 32 to output a second tuning voltage signal for tuning the phase adjustment region 13, the sixth DAC conversion module 26 is connected to the second passive cavity region 12 through the third voltage-controlled voltage source module 33, and the sixth analog voltage signal output by the sixth DAC conversion module 26 controls the third voltage-controlled voltage source module 33 to output a third tuning current The signal tunes the second passive cavity region 12.

The conversion rates of the first DAC conversion module 211 to the sixth DAC conversion module 26 are larger than or equal to 600MHz, and a specially designed integrating circuit is used for assisting. The step signal output by the microprocessor control module 1 can be converted into an analog voltage signal with higher linearity, the analog voltage signal drives a voltage-controlled current source module and a voltage-controlled current source module which are composed of high-speed precise operational amplifiers, and voltage or current which is continuously controllable and has high precision can be output. The microprocessor control module 1 selects six injection current or voltage values of two passive cavity regions corresponding to the wavelength and the power, a phase adjusting region 13, a power amplifier 15, a laser region 14 and a semiconductor optical amplifying unit 16 according to the setting requirement of the external on the output wavelength of the laser and the corresponding relation table of the current and the voltage combination and the output wavelength and the power, so as to realize the rapid wavelength tuning.

In this embodiment, the semiconductor laser is a four-segment wide-tuning fast frequency-sweeping semiconductor laser, and it should be noted that the semiconductor laser control system in the embodiment of the present invention may also provide a downward compatible drive for other types of lasers, such as a one-segment semiconductor laser, a two-segment semiconductor laser, and a three-segment semiconductor laser. The output requirements of other lasers can be met only by the quantity of voltage sources and current sources output by the semiconductor laser control system and the output voltage and current ranges. The pins of the thermistor 4 and the pins of the semiconductor refrigerating sheet 5 are connected with the semiconductor laser control system according to the laser requirements, other current tuning signals are connected with the voltage-controlled current source module, the voltage signals are connected with the voltage-controlled voltage source module, and the power supply range is determined during connection. The software communication of the upper computer 9 can control the semiconductor laser control system to drive the corresponding laser to emit light. If the wavelength and the temperature need to be accurately controlled, the wavelength, the power and the temperature of the laser can be calibrated by referring to the embodiment 1 and the embodiment 2.

It should be understood that various forms of the flows shown above, reordering, adding or deleting steps, may be used. For example, the steps described in this disclosure may be executed in parallel, sequentially, or in different orders, as long as the desired results of the technical solutions disclosed herein can be achieved, and the present disclosure is not limited herein.

The above-described embodiments should not be construed as limiting the scope of the invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions may be made in accordance with design requirements and other factors. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A semiconductor laser control system is characterized by comprising a microprocessor control module, a plurality of paths of mutually independent DAC conversion modules, a plurality of paths of mutually independent voltage-controlled voltage source modules, a plurality of paths of mutually independent voltage-controlled current source modules, a plurality of paths of mutually independent ADC conversion modules, a plurality of paths of mutually independent voltage acquisition modules, a plurality of paths of mutually independent current acquisition modules, a temperature sampling feedback module and a communication module;

the microprocessor control module is communicated with an upper computer through the communication module 3, receives a control instruction of the upper computer to control the semiconductor laser to work and transmits back working data information of the semiconductor laser to the upper computer, wherein the semiconductor laser comprises a first passive cavity area, a second passive cavity area, a phase adjusting area, a laser area, a power amplifier and a semiconductor light amplifying unit;

the DAC conversion module is used for dividing voltage into a target number of analog voltages according to a control instruction of the microprocessor control module, and the analog voltages are used for controlling a voltage-controlled voltage source module or a voltage-controlled current source module of the semiconductor laser;

the voltage acquisition module is used for acquiring voltage signals of the circuit and transmitting the voltage signals to the ADC module;

2. The semiconductor laser control system of claim 1, wherein the plurality of mutually independent DAC conversion modules comprises 7 mutually independent DAC conversion modules, namely a first DAC conversion module, a second DAC conversion module, a third DAC conversion module, a fourth DAC conversion module, a fifth DAC conversion module, a sixth DAC conversion module and a seventh DAC conversion module;

the multiple independent ADC conversion modules comprise 7 independent ADC conversion modules which are respectively a first ADC conversion module, a second ADC conversion module, a third ADC conversion module, a fourth ADC conversion module, a fifth ADC conversion module, a sixth ADC conversion module and a seventh ADC conversion module;

3. The semiconductor laser control system of claim 2, wherein the first DAC conversion module is connected to the semiconductor optical amplification unit via the first voltage-controlled current source module, and a first analog voltage signal output by the first DAC conversion module controls the first voltage-controlled current source module to output a first tuning current signal to tune the semiconductor optical amplification unit;

the third DAC conversion module is connected with the first passive cavity area through the first voltage-controlled voltage source module, and a third analog voltage signal output by the third DAC conversion module controls the first voltage-controlled voltage source module to output a first tuning voltage signal to tune the first passive cavity area;

the fourth DAC conversion module is connected with the laser area through the third voltage-controlled current source module, and a fourth analog voltage signal output by the fourth DAC conversion module controls the third voltage-controlled current source module to output a third tuning current signal to tune the laser area;

4. The semiconductor laser control system according to claim 2, wherein the microprocessor control module controls the first voltage-controlled current source to output a first current through the first DAC conversion module, the first current collection module collects the first current output by the first voltage-controlled current source and transmits a collected first current signal to the first ADC conversion module, and the first current collection module and the first ADC conversion module convert the first current signal into a first digital signal and transmit the first digital signal to the microprocessor control module;

5. The semiconductor laser control system according to claim 2, further comprising a thermistor for collecting a temperature of the semiconductor laser, a semiconductor chilling plate for adjusting the temperature of the semiconductor laser, and a semiconductor chilling control module for controlling operation of the semiconductor chilling plate, wherein the seventh DAC conversion module controls the semiconductor chilling control module 6 to be electrically connected to the semiconductor chilling plate, the fourth current collection module is electrically connected to the semiconductor chilling plate, the seventh ADC conversion module collects a chilling control current of the semiconductor chilling plate through the fourth current collection module, the thermistor is packaged with the semiconductor laser and the semiconductor chilling plate into a whole, the microprocessor control module obtains a temperature of the thermistor through the temperature sampling feedback module, the temperature sampling feedback module collects a die temperature of the semiconductor laser through the thermistor and feeds a measured temperature value back to the microprocessor control module, and the microprocessor control module controls the voltage-controlled current source module to adjust the chilling control current of the semiconductor chilling plate according to the measured temperature value to adjust the chilling efficiency.

6. The semiconductor laser control system according to claim 1 or 5, further comprising a data storage module for storing control data of the control system and a heat dissipation module for dissipating heat of the control system and maintaining the control system in a constant temperature working environment, wherein the data storage module and the heat dissipation module are electrically connected to the microprocessor control module respectively.

7. The semiconductor laser control system of claim 1, wherein the semiconductor refrigeration control module comprises an H-bridge driving circuit, the H-bridge driving circuit is electrically connected to the semiconductor refrigeration chip, and the seventh DAC conversion module controls a supply current of the H-bridge driving circuit to control the refrigeration efficiency of the semiconductor refrigeration chip.

8. The semiconductor laser control system of claim 6, wherein the heat dissipation module is an air-cooled heat sink comprising a fan, a heat sink, and a heat pipe.

9. A semiconductor laser control system as claimed in claim 1 wherein the microprocessor control module comprises a PGA programmable logic controller or an ARM processor.

10. The semiconductor laser control system of claim 2 wherein the semiconductor laser is a four-segment wide-tuning fast swept semiconductor laser.