CN115922109B - Wafer back laser cutting method and wafer - Google Patents
Wafer back laser cutting method and wafer Download PDFInfo
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- CN115922109B CN115922109B CN202310011048.1A CN202310011048A CN115922109B CN 115922109 B CN115922109 B CN 115922109B CN 202310011048 A CN202310011048 A CN 202310011048A CN 115922109 B CN115922109 B CN 115922109B
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Abstract
The invention discloses a wafer back laser cutting method and a wafer, which belong to the technical field of semiconductor processing and comprise the following steps: performing thermal oxygen growth on the slide and/or the wafer; carrying out bonding treatment and annealing treatment on the carrier sheet and the wafer to obtain a bonding sheet; carrying out back metal deposition on the bonding sheet to obtain a metal layer, and carrying out laser annealing; carrying out back laser scribing treatment on the bonding sheet; and (5) performing de-bonding treatment on the bonding sheet. Bonding and annealing are carried out by adopting a slide glass and/or a wafer growing with hot oxygen to form permanent bonding, the wafer is in a bonding state when carrying out operations such as laser scribing treatment and the like, and no process is required to be carried out on the wafer after the bonding is released, so that the influence of laser scribing and the like on the front surface of the wafer is avoided, the cleanliness of the wafer is ensured, and the process yield is further ensured; meanwhile, compared with the thinned single wafer, the wafer bonded with the carrier has stronger mechanical strength, and the risk of fragments is avoided.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a wafer back laser cutting method and a wafer.
Background
With the newer iteration of semiconductors, silicon Carbide (SiC) materials, which are representative of the third generation of semiconductors, are increasingly being widely used in the field of power devices due to their wide forbidden band, high electron mobility, and high thermal conductivity. One of the core parameters of interest in the field of power devices is the resistance of the device under conduction. In design production, on-resistance of the device needs to be reduced as much as possible under the conditions of ensuring surge, voltage resistance, reliability, cost and the like of the device. Thus, a thinning process is produced during the manufacturing process. In addition, because the hardness of the silicon carbide material is higher, the traditional grinding wheel scribing has the defects of long manufacturing process time, high possibility of edge breakage, low yield and the like. Therefore, in the manufacturing engineering, laser dicing is often used.
In the related process patent technology, a front surface film sticking mode, a back surface laser grooving and a front surface laser cutting mode of a single SiC wafer are adopted. The method is simple in process and convenient to operate, but the front side of the wafer is easy to be polluted due to the overturning and laser front side cutting, and the wafer is easy to cause the risk of fragments after overturning and thinning.
Disclosure of Invention
The invention aims to overcome the problems in the prior art and provides a wafer back laser cutting method and a wafer.
The aim of the invention is realized by the following technical scheme: a method of laser dicing a backside of a wafer, the method comprising:
performing thermal oxygen growth on the slide and/or the wafer;
carrying out bonding treatment and annealing treatment on the carrier sheet and the wafer to obtain a bonding sheet;
carrying out back metal deposition on the bonding sheet to obtain a metal layer, and carrying out laser annealing;
carrying out back laser scribing treatment on the bonding sheet;
and (5) performing de-bonding treatment on the bonding sheet.
In an example, before the bonding treatment is performed on the carrier and the wafer, the method further includes:
and trimming and annealing the wafer.
In one example, the trimming and annealing the wafer includes:
and (3) trimming the wafer for multiple times or step trimming, and carrying out low-temperature annealing treatment after each trimming or step trimming.
In an example, the method further includes, before the back side metal deposition of the bonding pad:
and thinning the bonding sheet.
In one example, the thinning of the bonding pad includes:
and carrying out multiple thinning treatment on the bonding sheet, wherein the rotation directions of grinding wheels in the adjacent two thinning treatment processes are opposite.
In an example, the thinning the bonding pad for a plurality of times further includes:
and carrying out annealing treatment once after each thinning treatment, and polishing before the last annealing treatment.
In an example, before the back side laser dicing process is performed on the bonding sheet, the method further includes:
and carrying out scribing mark deposition on the bonding sheet.
In an example, the dicing mark deposition on the bonding sheet further includes:
a second thermal oxide layer deposition is performed on the bond pads and the scribe marks are exposed.
In one example, the debonding process of the bonding pad includes:
and the first thermal oxide layer between the carrier and the wafer is removed so as to realize the de-bonding treatment.
It should be further noted that the technical features corresponding to the examples of the above method may be combined with each other or replaced to form a new technical scheme.
The invention further comprises a wafer, and the wafer is prepared by adopting the method for cutting the back of the wafer by using the laser cutting method formed by any one or a plurality of examples.
Compared with the prior art, the invention has the beneficial effects that:
1. in an example, a slide glass and/or a wafer with a first thermal oxide layer grown thereon are adopted to bond and anneal to form permanent bonding, the wafer is in a bonding state when the operations such as laser scribing processing are carried out, and the wafer does not need to be subjected to process after the bonding is released, so that the influence of laser scribing and the like on the front surface of the wafer is avoided, the cleanliness of the wafer is ensured, and the process yield is further ensured; meanwhile, compared with the thinned single wafer, the wafer bonded with the carrier has stronger mechanical strength, and the risk of fragments is avoided.
2. In an example, the wafer is trimmed to prevent edge chipping; the annealing treatment can eliminate the influence of internal stress caused by the trimming process and reduce the possibility of trimming fragments.
3. In one example, multiple trimming greatly reduces the chance of edge chipping compared to a single trimming process, and can prevent wafer chipping to a maximum extent.
4. In one example, the bonding pad is thinned to ensure performance of the device that is subsequently fabricated.
5. In an example, compared with single thinning, the multiple thinning treatment greatly reduces the risk of fragments, and the rotation directions of the grinding wheels in the adjacent two thinning processes are opposite, so that the residual stress of the internal structure of the wafer is counteracted, and the occurrence of the phenomenon of fragments is prevented.
6. In an example, the annealing treatment is performed after each thinning, so that the influence of internal stress caused by the thinning treatment can be eliminated, and the possibility of thinning fragments is reduced; meanwhile, the polishing process is only carried out after the last thinning process, so that the risk of burning in the subsequent thinning process is prevented.
7. In one example, by depositing scribe marks, laser scribe deviations are avoided, ensuring scribe accuracy.
8. In an example, the bonding wafer is subjected to the second thermal oxide layer deposition before laser scribing, so that the influence of laser on ohmic contact metal (metal layer) is avoided, and the preparation yield is ensured.
9. In an example, the second thermal oxide layer on the bonding wafer can be removed while the debonding process is achieved by removing the first thermal oxide layer between the carrier and the wafer, and the second thermal oxide layer does not need to be removed alone, so that the process steps are reduced, and the process difficulty is reduced.
Drawings
The following detailed description of the present invention is further detailed in conjunction with the accompanying drawings, which are provided to provide a further understanding of the present application, and in which like reference numerals are used to designate like or similar parts throughout the several views, and in which the illustrative examples and descriptions thereof are used to explain the present application and are not meant to be unduly limiting.
FIG. 1 is a flow chart of a method in an example of the invention;
FIG. 2 is a flow chart of a preferred exemplary method of the present invention;
FIG. 3 is a schematic diagram illustrating the thermal oxygen growth on a slide in a preferred embodiment of the present invention in step S1;
FIG. 4 is a schematic diagram of the preferred embodiment of the present invention prepared in step S2;
FIG. 5 is a schematic diagram of the preferred embodiment of the present invention prepared in step S3;
FIG. 6 is a schematic diagram of the preferred embodiment of the present invention prepared in step S4;
FIG. 7 is a schematic diagram of the preferred embodiment of the present invention prepared in step S5;
FIG. 8 is a schematic diagram of the preferred embodiment of the present invention prepared in step S6;
FIG. 9 is a schematic diagram of the preferred embodiment of the present invention prepared in step S7;
fig. 10 is a schematic diagram of the present invention prepared in the preferred exemplary step S8.
In the figure: 1-slide; 2-wafer; 31-a first thermal oxide layer; 32-a second thermal oxide layer; 4-a metal layer; 5-dicing marks.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully understood from the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that directions or positional relationships indicated as being "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are directions or positional relationships described based on the drawings are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or elements to be referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention. Further, ordinal words (e.g., "first and second," "first through fourth," etc.) are used to distinguish between objects, and are not limited to this order, but rather are not to be construed to indicate or imply relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
The invention relates to a wafer back laser cutting method, which is applicable to a laser cutting scene of a SiC wafer and also applicable to a laser cutting scene of a Si wafer.
In an example, a method for cutting the back of a SiC wafer by laser, as shown in fig. 1, specifically includes the following steps:
s1': performing thermal oxygen growth on the slide and/or the wafer;
s2': carrying out bonding treatment and annealing treatment on the carrier sheet and the wafer to obtain a bonding sheet;
s3': carrying out back metal deposition on the bonding sheet to obtain a metal layer, and carrying out laser annealing;
s4': carrying out back laser scribing treatment on the bonding sheet;
s5': and (5) performing de-bonding treatment on the bonding sheet.
Further, in step S1', it is preferable to perform thermal oxygen growth on both the Si slide and the SiC wafer, where the slide and the wafer are formed with the first thermal oxygen layer SiO 2 The method comprises the steps of carrying out a first treatment on the surface of the The first thermal oxide layer has a thickness of 100 nm-120nm, preferably 110nm.
Further, CMP polishing (chemical mechanical polishing) and RCA cleaning (industry standard wet cleaning process) are required for Si carrier, siC wafer prior to bonding.
Further, in step S2', the carrier sheet and the wafer provided with the first thermal oxide layer are subjected to bonding treatment, and are annealed at 850-1050 ℃, preferably at 900 ℃, so as to ensure that water molecules at the bonding interface completely overflow and form Si-O-Si bonds, thereby forming a permanently bonded Si carrier sheet-SiC wafer bonding sheet.
Further, in step S3', the backside metal deposition is preferably Ti or Mo, and laser annealing is performed after the metal deposition.
Further, in step S4', the laser dicing depth is equal to or greater than the sum of the thicknesses of the SiC wafer and the metal layer. In the step, the laser scribing is communicated with the equipment adopted in the step S3' for laser annealing, only partial equipment such as a laser lens and the like is required to be changed, and the manufacturing equipment cost is greatly reduced. In addition, compared with other scribing technologies, the laser scribing technology does not need grooving treatment, so that the manufacturing cost and time are greatly saved.
Further, in step S5', after dicing processing is completed, dicing and wafer debonding processing may be performed, so as to obtain a SiC wafer with the backside laser dicing completed.
In the example, the slide glass with the grown hot oxygen and the wafer with the grown hot oxygen are adopted to bond and anneal to form permanent bonding, the wafers are in a bonding state when the operations such as laser scribing processing are carried out, and the process on the wafer is not needed after the bonding is released, so that the influence of laser scribing and the like on the front surface of the wafer is avoided, the cleanliness of the wafer is ensured, and the process yield is further ensured; meanwhile, compared with the thinned single wafer, the wafer bonded with the carrier has stronger mechanical strength, avoids the risk of fragments and further ensures the process yield.
In an example, before the bonding treatment is performed on the carrier sheet and the wafer, the method further comprises:
and trimming and annealing the wafer. The wafer is subjected to trimming treatment, so that edge breakage and cracking of the wafer can be prevented; the annealing treatment can eliminate the influence of internal stress caused by the trimming process and reduce the possibility of trimming fragments.
In one example, trimming and annealing the wafer includes:
and (3) trimming the wafer for multiple times or step trimming, and carrying out low-temperature annealing treatment after each trimming or step trimming. Preferably, the step trimming treatment is performed for multiple times, and compared with the single trimming treatment, the trimming treatment for multiple times greatly reduces the edge breakage probability and can prevent the wafer from being broken to the greatest extent.
In one example, to ensure process stability and yield and minimize the effect of internal stress, the trimming and annealing process for the wafer specifically includes the following steps:
s021': performing primary trimming treatment on the SiC wafer, wherein the trimming width is 5mm, and the depth is 150um;
s022': carrying out a low-temperature annealing process on the SiC wafer, wherein the annealing temperature is 500 ℃, and the annealing time is 30min;
s023': performing secondary trimming treatment on the SiC wafer, wherein the trimming width is 3mm, and the depth is the thinned thickness;
s024': and carrying out a low-temperature annealing process on the SiC wafer, wherein the annealing temperature is 500 ℃, and the annealing time is 30min.
Of course, the trimming process can be extended to multiple times of trimming, and the trimming depth and thickness can be correspondingly adjusted.
In one example, the bonding pad prior to back side metal deposition further comprises:
and thinning the bonding sheet to ensure the performance of the device obtained by subsequent preparation.
In one example, the thinning of the bonding pad includes:
and carrying out multiple thinning treatment on the bonding sheet, wherein the rotation directions of the grinding wheels in the adjacent two thinning treatment processes are opposite, namely clockwise rotation and anticlockwise rotation are alternately carried out. Compared with single thinning, the repeated thinning treatment of the example greatly reduces the risk of fragments, and the rotation directions of the grinding wheels in the adjacent two thinning processes are opposite, so that the residual stress of the internal structure of the wafer is counteracted, and the occurrence of the phenomenon of fragments is prevented. Preferably, in the multiple thinning process, the thinning thickness is gradually reduced, that is, the thinning thickness is generally the thickest in the first thinning process, and the thinning thickness is the thinnest in the last thinning process. Of course, the thickness of the adjacent thinning treatments may be equal.
In an example, when the bonding sheet is thinned a plurality of times, the method further includes:
and carrying out annealing treatment once after each thinning treatment, and polishing before the last annealing treatment. The annealing treatment is carried out after each thinning, so that the influence of internal stress caused by the thinning treatment can be eliminated, and the possibility of thinning fragments is reduced; meanwhile, the polishing process is only carried out after the last thinning process, so that the risk of burning in the subsequent thinning process is prevented.
The above-described examples of the multiple thinning processes are combined, and the bonding-sheet thinning process includes a first thinning, a first annealing, a second thinning, a second annealing, a third thinning, a third annealing, a fourth thinning, polishing, and a fourth annealing. Wherein, each time the thickness of attenuate is not more than 1/2 of the total thickness of attenuate of the device, each time grinding wheel rotational speed and decline speed present the ladder type to change, the concrete step is:
s031': the first thinning treatment, wherein the thinning thickness is 1/3 of the total thinning thickness, the revolution of a grinding wheel is 2200 r/min-3000r/min, the rotation direction is clockwise, the descending speed is gradually changed from 5um/s to 1um/s, the step descending trend is shown, and the grinding amount in each grinding stage is parabolic descending;
s032': the first annealing is carried out at 500 ℃ for 30min;
s033': the second thinning treatment, wherein the thinning thickness is 1/3 of the total thinning thickness, the revolution of the grinding wheel is 2200 r/min-3000r/min, the rotation direction is anticlockwise, the descending speed is gradually changed from 5um/s to 1um/s, the step descending trend is shown, and the grinding amount in each grinding stage is parabolic descending;
s034': the second annealing is carried out at 500 ℃ for 30min;
s035': the third thinning treatment, wherein the thinning thickness is 1/6 of the total thinning thickness, the revolution of the grinding wheel is 2000r/min, the direction is clockwise, the descending speed is gradually changed from 1um/s to 0.5um/s, the step descending trend is shown, and the grinding amount in each grinding stage is parabolic descending;
s036': annealing for the third time, wherein the annealing temperature is 500 ℃ and the time is 30min;
s037': the fourth thinning treatment, wherein the thinning thickness is 1/6 of the total thinning thickness, the revolution of the grinding wheel is 2000r/min, the direction is anticlockwise, the descending speed is gradually changed from 1um/s to 0.5um/s, the stepped descending trend is shown, and the grinding amount at each grinding stage is parabolic descending;
s038': polishing the thinned bonding sheet to a polishing thickness of 0.1nm;
s039': and carrying out fourth annealing on the bonding sheet, wherein the annealing temperature is 500 ℃ and the time is 30min.
In order to ensure the thinning quality, the thinning times in the steps S031 '-S039' can be extended to 6 times, 8 times to 2N times, N is a positive integer, and the thinning thickness can be adjusted according to actual conditions. In addition, a low temperature annealing process is required after each thinning. Meanwhile, in order to prevent the risk of burning in the subsequent thinning process, the polishing process is only performed after the last thinning process, so that the surface of the device is ensured to have certain roughness in the thinning process.
In addition, in order to ensure the quality of the subsequent wafer thinning, the total thickness of the thinned wafer in the steps S031 '-S039' is the thickness of the wafer plus the thickness of the thinned slide.
In an example, before the back side laser dicing process is performed on the bonding sheet, the method further includes:
and a scribing mark is deposited on the bonding piece, so that deviation of laser scribing is avoided, and scribing precision and process reliability are ensured.
In one example, the dicing mark deposition of the bonding sheet further comprises:
a second thermal oxide layer deposition is performed on the bond pads and the scribe marks are exposed. Wherein the second thermal oxide layer is SiO 2 And the layer is the same as the first thermal oxide layer between the bonding carrier and the wafer. In this example, the second thermal oxide layer has a thickness of 100 nm-120nm, preferably 100nm. Exposing the dicing marks, depositing a second thermal oxide layer on the surface of the bonding sheet, and removing the second thermal oxide layer on the dicing marks; the scribe marks may also be masked first, then a second thermal oxide layer may be deposited, and the mask layer removed to expose the scribe marks. In this example, a second thermal oxide layer deposition is performed on the bond pad prior to laser dicing,the influence of laser on ohmic contact metal (metal layer) is avoided, and the preparation yield is ensured.
In one example, the debonding process of the bonding sheet includes:
and the first thermal oxide layer between the carrier and the wafer is removed so as to realize the de-bonding treatment. Preferably by etching the first thermal oxide layer (interfacial layer SiO 2 ) And the second thermal oxide layer on the surface of the bonding sheet can be removed by etching with etching liquid, so that the process steps are reduced, and the process difficulty is reduced.
Combining the above examples, a preferred example of the present invention is shown in fig. 2, where the wafer back side laser cutting method includes the following steps:
s1: as shown in fig. 3, the Si slide 1 is subjected to thermal oxygen growth, so that a first thermal oxygen layer 31 is formed on the Si slide 1; simultaneously carrying out thermal oxygen growth on the SiC wafer 2 to form a first thermal oxygen layer 31 on the SiC wafer 2;
s2: as shown in fig. 4, the SiC wafer 2 after the thermal oxygen growth is subjected to a secondary trimming and annealing process;
s3: as shown in fig. 5, an automatic bonding process and an annealing process are performed on the Si slide 1 and the SiC wafer 2;
s4: as shown in fig. 6, the bonding sheet is subjected to multiple thinning and annealing processes;
s5: as shown in fig. 7, the bonding sheet is subjected to back metal deposition to obtain a metal layer 4, and is subjected to laser annealing;
s6: as shown in fig. 8, laser scribe marks 5 are deposited on the bond pads;
s7: as shown in fig. 9, the bonding pad is deposited with a second thermal oxide layer 32 and selectively etched to expose the laser scribe marks 5;
s8: as shown in fig. 10, the bonding piece is subjected to back laser dicing, and the dicing depth is equal to or greater than the sum of thicknesses of the SiC wafer 2, the metal layer 4, and the second thermal oxide layer 32.
S9: and (5) performing a de-bonding process on the bonding sheet.
The method mainly comprises a secondary trimming and annealing process of the SiC wafer, an automatic bonding process of the wafer and a slide, an annealing process, a multiple thinning process, a back metal deposition process, a laser annealing process, a laser scribing mark deposition process, a back thermal oxygen deposition process, a laser scribing process and a de-bonding process. Through the process flow, the pollution influence of front laser scribing is avoided while the stability of the back process is ensured, and the yield of production and manufacture is greatly increased. In addition, by adopting the laser annealing process, the SiC wafer can be subjected to front schottky metal and protective layer deposition before annealing, so that the process manufacturing of the SiC wafer is directly completed after the back surface process, the laser scribing and the debonding process are completed without the need of carrying out subsequent front surface processes.
The invention further comprises a wafer, which is prepared by adopting the wafer back laser cutting method formed by any one or more examples, and is convenient for preparing the bare chip.
The foregoing detailed description of the invention is provided for illustration, and it is not to be construed that the detailed description of the invention is limited to only those illustration, but that several simple deductions and substitutions can be made by those skilled in the art without departing from the spirit of the invention, and are to be considered as falling within the scope of the invention.
Claims (5)
1. A wafer back laser cutting method is characterized in that: which comprises the following steps:
carrying out thermal oxygen growth on the slide glass to form a first thermal oxygen layer on the slide glass; simultaneously carrying out thermal oxygen growth on the wafer to form a first thermal oxygen layer on the wafer;
carrying out bonding treatment and annealing treatment on the carrier sheet and the wafer to obtain a bonding sheet;
the thinning treatment is carried out on the bonding sheet, and the method comprises the following steps: carrying out multiple thinning treatment on the bonding sheet, wherein the rotation directions of grinding wheels in the adjacent two thinning treatment processes are opposite;
carrying out back metal deposition on the bonding sheet to obtain a metal layer, and carrying out laser annealing;
scribing, marking and depositing the bonding sheet;
performing thermal oxide layer deposition on the bonding sheet to obtain a second thermal oxide layer,and exposing the scribe marks; the second thermal oxygen layer is SiO 2 The material of the layer is the same as that of the first thermal oxide layer; exposing the scribe marks includes: firstly shielding the scribing mark, then depositing a second thermal oxide layer, and removing the shielding layer to expose the scribing mark;
carrying out back laser scribing treatment on the bonding sheet, wherein the scribing depth is larger than or equal to the sum of thicknesses of the wafer, the metal layer and the second thermal oxide layer;
the bonding sheet is subjected to bonding release treatment, which comprises the following steps: and removing the first thermal oxide layer and the second thermal oxide layer between the slide glass and the wafer through etching liquid, so as to realize de-bonding treatment.
2. The method for laser dicing a wafer backside according to claim 1, wherein: the method for bonding the carrier and the wafer comprises the following steps:
and trimming and annealing the wafer.
3. A method of laser dicing a wafer backside as claimed in claim 2, wherein: the trimming treatment and the annealing treatment of the wafer comprise the following steps:
and (3) trimming the wafer for multiple times or step trimming, and carrying out low-temperature annealing treatment after each trimming or step trimming.
4. The method for laser dicing a wafer backside according to claim 1, wherein: the process of thinning the bonding sheet for a plurality of times further comprises:
and carrying out annealing treatment once after each thinning treatment, and polishing before the last annealing treatment.
5. A wafer, characterized in that: the wafer backside laser cutting method of any one of claims 1-4.
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