CN115913184A - Method for realizing duty ratio adjustable half-bridge or full-bridge output RTZ (real time z) for overcoming influence of parasitic capacitance - Google Patents
Method for realizing duty ratio adjustable half-bridge or full-bridge output RTZ (real time z) for overcoming influence of parasitic capacitance Download PDFInfo
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- CN115913184A CN115913184A CN202211298422.2A CN202211298422A CN115913184A CN 115913184 A CN115913184 A CN 115913184A CN 202211298422 A CN202211298422 A CN 202211298422A CN 115913184 A CN115913184 A CN 115913184A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention discloses a method for realizing duty ratio adjustable half-bridge or full-bridge output RTZ (real time feedback) for overcoming the influence of parasitic capacitance, which comprises the steps of designing an input signal logic control circuit and an alternating current output short circuit control circuit, and realizing the influence control of output return-to-zero parasitic parameters by combining a push-pull signal, wherein the input signal logic control circuit is in a half-bridge circuit topology, and the alternating current output short circuit control circuit comprises an OR logic circuit, an isolating circuit, a pull-up resistor R6 and a bidirectional electronic switch circuit; the isolation circuit is composed of an isolation resistor (R7) and a photoelectric coupler U2; the bidirectional electronic switching circuit includes a third field effect transistor Q3, a fourth field effect transistor Q4, a first voltage-dividing resistor R1, and a second voltage-dividing resistor R2. The invention can overcome the influences of junction capacitance and load and realize duty ratio controllable output.
Description
The technical field is as follows:
the invention belongs to the technical field of electronic amplifiers, and particularly relates to a method for realizing duty ratio adjustable half-bridge or full-bridge output RTZ (real time z) for overcoming the influence of parasitic capacitance.
The background art comprises the following steps:
common topologies for transmitters include transformer push-pull, half-bridge, or full-bridge. In some application occasions, variable amplitude output is required, and the output amplitude cannot follow the change of the input duty ratio under the influence of parameters such as interelectrode parasitic capacitance of a power tube, load and the like. Particularly in high-frequency application, the driving signal has no carrier frequency modulation, and when the impedance of the transducer is high, the output waveform cannot follow the change of the duty ratio of the input signal.
The invention content is as follows:
the invention aims to solve the technical problem of providing a method for realizing duty ratio adjustable half-bridge or full-bridge output RTZ, which overcomes the influence of parasitic capacitance. The invention realizes the adjustable output duty ratio and the approximate linear change by designing a method for returning To Zero (Return To Zero).
The technical solution of the present invention is to provide a method for realizing duty ratio adjustable half-bridge or full-bridge output RTZ for overcoming the influence of parasitic capacitance, which comprises designing an input signal logic control circuit and an AC output short-circuit control circuit, and realizing the influence control of the parasitic parameter of output return-to-zero by using a push-pull signal based on designing the input signal logic control circuit and the AC output short-circuit control circuit, wherein,
the input signal logic control circuit is in a half-bridge circuit topology, and the alternating current output short circuit control circuit comprises an OR logic circuit, an isolation circuit, a pull-up resistor R6 and a bidirectional electronic switch circuit; wherein the content of the first and second substances,
the isolation circuit consists of an isolation resistor (R7) and a photoelectric coupler U2; the bidirectional electronic switch circuit comprises a third field effect transistor Q3, a fourth field effect transistor Q4, a first voltage-dividing resistor R1 and a second voltage-dividing resistor R2, wherein the first voltage-dividing resistor R1 is used for adjusting the switching speed of the bidirectional electronic switch circuit, and the second voltage-dividing resistor R2 is used for controlling the input impedance of the third field effect transistor Q3 and the fourth field effect transistor Q4;
when a push-pull signal pair with adjustable duty ratio is input, the push-pull signal pair is simultaneously transmitted to an OR logic circuit when being transmitted to a field effect transistor driver U1 of a half-bridge circuit topology, or an output signal of the logic circuit is transmitted to an isolation circuit, and a photoelectric coupler U2 drives a bidirectional electronic switching circuit under the action of a pull-up resistor R6 (the pull-up resistor R6 forms output pull-up).
Preferably, when the push-pull signal pair is at a low level simultaneously, or the output signal of the logic circuit is at a low level, after passing through the isolation circuit, the isolation circuit outputs a pull-up high level, and after the level is divided by the first voltage dividing resistor R1 and the second voltage dividing resistor R2, the bidirectional switch composed of the third field effect transistor Q3 and the fourth field effect transistor Q4 is driven, so that the bidirectional switch is in a bidirectional conduction state, thereby realizing output short circuit and completing discharge of charges.
Preferably, the photocoupler is a high-speed photocoupler 6N137.
Preferably, the half-bridge circuit topology of the input signal logic control circuit may be replaced with a full-bridge circuit topology. That is, the method is not limited to the application of the half-bridge circuit, the input signal logic control circuit part can be replaced by a full-bridge topology, the same signal is adopted for diagonal driving, and the function can still be realized through the designed alternating current output short-circuit control circuit.
Preferably, the pull-up resistor R6 and the photocoupler are alternatively designed as a positive logic device of the photocoupler TLP250, and the output of the corresponding or logic circuit is inverted.
Further, the field effect transistors of the half-bridge circuit topology include a first field effect transistor Q1 and a second field effect transistor Q2.
Compared with the prior art, the invention has the following advantages after adopting the scheme:
the invention can realize the influence control of the output return-to-zero parasitic parameter by combining the push-pull signal through the designed input signal logic control circuit and the alternating current output short circuit control circuit, thereby overcoming the influence of junction capacitance and load and realizing the duty ratio controllable output.
Description of the drawings:
FIG. 1 is a schematic diagram of an implementation of an embodiment of the present invention;
FIG. 2 is a schematic diagram of a test load configuration according to an embodiment of the present invention;
FIG. 3 is a graph comparing test results of examples of the present invention.
The specific implementation mode is as follows:
the invention will be further described with respect to specific embodiments in conjunction with the following drawings:
the invention discloses a method for realizing duty ratio adjustable half-bridge or full-bridge output RTZ (real time z) for overcoming the influence of parasitic capacitance, which comprises a design input signal logic control circuit 1 and an alternating current output short circuit control circuit 2 as shown in figure 1, and realizes the influence control of output return-to-zero parasitic parameters based on the combination of the design input signal logic control circuit 1 and the alternating current output short circuit control circuit 2 and push-pull signals. The input signal logic control circuit 1 is a half-bridge circuit topology, the field effect transistor driver U1 is an integrated high-side driver and low-side driver, when the field effect transistor driver U1 is applied, a corresponding device can be selected according to frequency characteristics, in the example, the device 2EDL23N06PJ is selected, and the first field effect transistor Q1, the second field effect transistor Q2, the capacitor C3 and the capacitor C4 form a half bridge to form a common half-bridge circuit structure. The ac output short circuit control circuit 2 is a control part added to the input signal logic control circuit 1 to implement the above function. The control part mainly comprises an OR logic circuit, an isolation circuit and a bidirectional electronic switch circuit.
Specifically, the alternating current output short circuit control circuit 2 comprises an OR logic circuit, an isolation circuit, a pull-up resistor R6 and a bidirectional electronic switch circuit; wherein the content of the first and second substances,
the isolation circuit consists of an isolation resistor R7 and a photoelectric coupler U2; the bidirectional electronic switch circuit comprises a third field effect transistor Q3, a fourth field effect transistor Q4, a first voltage-dividing resistor R1 and a second voltage-dividing resistor R2, wherein the first voltage-dividing resistor R1 is used for adjusting the switching speed of the bidirectional electronic switch circuit, and the second voltage-dividing resistor R2 is used for controlling the input impedance of the third field effect transistor Q3 and the fourth field effect transistor Q4;
in this embodiment, the photocoupler U2 uses a high-speed photocoupler 6N137.
When a push-pull signal pair with adjustable duty ratio is input, the push-pull signal pair is simultaneously transmitted to an OR logic circuit when being transmitted to a field effect transistor driver U1 of a half-bridge circuit topology, or an output signal of the logic circuit is transmitted to an isolation circuit, and a photoelectric coupler U2 drives a bidirectional electronic switching circuit under the action of a pull-up resistor R6 (the pull-up resistor R6 forms output pull-up).
The PWM _ H and the PWM _ L are push-pull signal pairs with adjustable input duty ratios, when the PWM _ H and the PWM _ L are at a low level simultaneously, or the output of a logic circuit is at a low level, the isolation circuit outputs to a pull-up high level VDD after passing through the isolation circuit, the level is subjected to voltage division by a first voltage division resistor R1 and a second voltage division resistor R2, and then drives a bidirectional switch consisting of a third field effect transistor Q3 and a fourth field effect transistor Q4, so that the bidirectional switch is in a bidirectional conduction state, output short circuit is realized, and discharge of electric charges is completed.
The isolation circuit of the present invention is not limited to the above-mentioned devices, and in the case where a high driving capability is required, the pull-up resistor R6 is not used, and when a positive logic (input "ON" corresponds to output "ON") device such as the photocoupler TLP250 is used, or the output of the logic circuit is inverted (through a non-logic circuit).
In addition, the invention is not limited to the application of half-bridge circuits, namely: the input signal logic control circuit 1 can be replaced by a full-bridge topology, the same signals are adopted for diagonal line driving, and the functions can still be realized through the alternating current output short circuit control circuit 2.
To verify the effect, as shown in fig. 2, the load is composed of an LC filter network and a resistor, RL =100k Ω, ls =20mh, c =120pf, and the operating frequency is set to 100kHz. IRFP460 is selected as the MOS tube, and the bus voltage is 400V.
As shown in fig. 3, when there is no RTZ function, the push-pull signal pair with a duty of 10% is shown in waveform 2, and waveform 1 is the output waveform after the RTZ function is added, so that it can be seen that the output duty ratio is kept close to the input in the case of high impedance after the RTZ function is added. Table 1 shows the results of the quantitative test in this configuration.
Table 1:
and (4) conclusion: the method can realize the control of the duty ratio under the working condition of high impedance.
The foregoing is illustrative of the preferred embodiments of the present invention only and is not to be construed as limiting the claims. All the equivalent structures or equivalent process changes made by the description of the invention are included in the scope of the patent protection of the invention.
Claims (6)
1. A method for realizing duty ratio adjustable half-bridge or full-bridge output RTZ for overcoming the influence of parasitic capacitance is characterized in that: comprises an input signal logic control circuit and an alternating current output short circuit control circuit, wherein the input signal logic control circuit and the alternating current output short circuit control circuit are designed, and the parasitic parameter influence control of output return to zero is realized by using a push-pull signal based on the input signal logic control circuit and the alternating current output short circuit control circuit,
the input signal logic control circuit is in a half-bridge circuit topology, and the alternating current output short circuit control circuit comprises an OR logic circuit, an isolation circuit, a pull-up resistor (R6) and a bidirectional electronic switch circuit; wherein the content of the first and second substances,
the isolation circuit consists of an isolation resistor (R7) and a photoelectric coupler (U2); the bidirectional electronic switch circuit comprises a third field effect transistor (Q3), a fourth field effect transistor (Q4), a first voltage division resistor (R1) and a second voltage division resistor (R2), wherein the first voltage division resistor (R1) is used for adjusting the switching speed of the bidirectional electronic switch circuit, and the second voltage division resistor (R2) is used for controlling the input impedance of the third field effect transistor (Q3) and the fourth field effect transistor (Q4);
when a push-pull signal pair with adjustable duty ratio is input, the push-pull signal pair is simultaneously transmitted to an OR logic circuit when being transmitted to a field effect transistor driver (U1) of a half-bridge circuit topology, or an output signal of the logic circuit is transmitted to an isolation circuit, and a photoelectric coupler (U2) drives a bidirectional electronic switch circuit under the action of a pull-up resistor (R6).
2. The method for realizing duty ratio adjustable half-bridge or full-bridge output RTZ to overcome the influence of parasitic capacitance according to claim 1, characterized in that: when the push-pull signal pair is at a low level simultaneously, or the output signal of the logic circuit is at a low level, the isolation circuit outputs to a pull-up high level after passing through the isolation circuit, the level is divided by a first voltage dividing resistor (R1) and a second voltage dividing resistor (R2), and then a bidirectional switch consisting of a third field effect transistor (Q3) and a fourth field effect transistor (Q4) is driven, so that the bidirectional switch is in a bidirectional conduction state, output short circuit is realized, and discharge of electric charges is completed.
3. The method for realizing duty ratio adjustable half-bridge or full-bridge output RTZ to overcome the influence of parasitic capacitance according to claim 1, characterized in that: the photoelectric coupler is a high-speed photoelectric coupler 6N137.
4. The method for realizing duty ratio adjustable half-bridge or full-bridge output RTZ to overcome the influence of parasitic capacitance according to claim 1, characterized in that: the half-bridge circuit topology of the input signal logic control circuit may be replaced with a full-bridge circuit topology.
5. The method for realizing duty ratio adjustable half-bridge or full-bridge output RTZ to overcome the influence of parasitic capacitance according to claim 1, characterized in that: the pull-up resistor (R6) and the photocoupler may alternatively be designed as a positive logic device of the photocoupler TLP250, and the corresponding output of the or logic circuit is inverted.
6. The method for realizing duty ratio adjustable half-bridge or full-bridge output RTZ to overcome the influence of parasitic capacitance according to claim 1, characterized in that: the field effect transistors of the half-bridge circuit topology comprise a first field effect transistor (Q1) and a second field effect transistor (Q2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211298422.2A CN115913184A (en) | 2022-10-23 | 2022-10-23 | Method for realizing duty ratio adjustable half-bridge or full-bridge output RTZ (real time z) for overcoming influence of parasitic capacitance |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211298422.2A CN115913184A (en) | 2022-10-23 | 2022-10-23 | Method for realizing duty ratio adjustable half-bridge or full-bridge output RTZ (real time z) for overcoming influence of parasitic capacitance |
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| CN115913184A true CN115913184A (en) | 2023-04-04 |
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| CN202211298422.2A Pending CN115913184A (en) | 2022-10-23 | 2022-10-23 | Method for realizing duty ratio adjustable half-bridge or full-bridge output RTZ (real time z) for overcoming influence of parasitic capacitance |
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- 2022-10-23 CN CN202211298422.2A patent/CN115913184A/en active Pending
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