CN115877162A - Power semiconductor module junction temperature online evaluation method and device - Google Patents
Power semiconductor module junction temperature online evaluation method and device Download PDFInfo
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- CN115877162A CN115877162A CN202211536414.7A CN202211536414A CN115877162A CN 115877162 A CN115877162 A CN 115877162A CN 202211536414 A CN202211536414 A CN 202211536414A CN 115877162 A CN115877162 A CN 115877162A
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Abstract
The invention discloses a power semiconductor module junction temperature online evaluation method and a device, belonging to the technical field of electrical and thermal measurement of electronic devices, wherein the method comprises the following steps: recording a transient temperature rise curve at the temperature sensor; recording a transient temperature drop curve at the chip; converting the transient temperature drop curve at the chip into a transient temperature rise curve at the chip; calculating the transient thermal resistance from the chip to the temperature sensor according to the transient temperature rise curve at the chip and the transient temperature rise curve at the temperature sensor; fitting the transient thermal resistance from the chip to the temperature sensor according to a pre-constructed thermal resistance and thermal capacitance network FOSTER model to obtain a transient thermal resistance curve from the chip to the temperature sensor; calculating the pulse thermal resistance from the chip to the temperature sensor according to the transient thermal resistance curve from the chip to the temperature sensor; and calculating the junction temperature of the power semiconductor module according to the pulse thermal resistance from the chip to the temperature sensor. According to the invention, the junction temperature of the power semiconductor module can be calculated through the pulse thermal resistance from the chip to the temperature sensor.
Description
Technical Field
The invention relates to a power semiconductor module junction temperature online evaluation method and device, and belongs to the technical field of electrical and thermal measurement of electronic devices.
Background
The evaluation of the internal temperature of the power semiconductor module is crucial to the reliability of the power semiconductor module, the junction temperature refers to the temperature of an active area of a chip in the power semiconductor module, generally is the highest point of the internal temperature, and currently, the junction temperature is mainly measured through the junction-crust thermal resistance, namely, the junction temperature is calculated by measuring the temperature of a radiating shell and combining the junction-crust thermal resistance, but in the practical application process, the measurement of the shell temperature is difficult.
In a part of power semiconductor modules, a temperature sensor (such as a thermistor NTC) is embedded in the module, and the junction temperature is simply estimated by measuring the temperature of the temperature sensor, but the difference between the temperature of the sensor and the junction temperature is large, and the difference is different under different application conditions, so that the junction temperature cannot be accurately estimated.
Disclosure of Invention
The invention aims to provide a method and a device for online evaluation of junction temperature of a power semiconductor module.
In order to achieve the purpose, the invention provides the following technical scheme:
in a first aspect, the present invention provides a power semiconductor module junction temperature online evaluation method, including:
switching on a power supply of the power semiconductor module to heat the power semiconductor module, and recording a transient temperature rise curve N (t) at the temperature sensor through temperature acquisition equipment;
switching off a power supply of the power semiconductor module, converting the temperature of the power semiconductor module from rising to lowering through the liquid cooling platform, and recording a transient temperature drop curve b (t) at the chip through temperature acquisition equipment;
converting the transient temperature drop curve b (t) at the chip into a transient temperature rise curve a (t) at the chip;
calculating the transient thermal resistance ZTh from the chip to the temperature sensor according to the transient temperature rise curve a (t) at the chip and the transient temperature rise curve N (t) at the temperature sensor;
fitting the transient thermal resistance ZTh from the chip to the temperature sensor according to a pre-constructed thermal resistance and thermal capacitance network FOSTER model to obtain a transient thermal resistance curve ZThj-N from the chip to the temperature sensor;
calculating the pulse thermal resistance ZThj-N (pulse) from the chip to the temperature sensor according to the transient thermal resistance curve ZThj-N from the chip to the temperature sensor;
and calculating the junction temperature of the power semiconductor module according to the pulse thermal resistance ZThj-N (pulse) from the chip to the temperature sensor and the temperature measured at the temperature sensor in practical application.
With reference to the first aspect, further, the temperature sensor is replaced with a temperature measurement diode, so that the sampling rate reaches 1MHz.
With reference to the first aspect, further, the power supply of the power semiconductor module is cut off, and the power semiconductor module is converted from temperature rise to temperature reduction through the liquid cooling platform, wherein the time used is less than 10 μ s.
With reference to the first aspect, further, the calculation formula for converting the transient temperature drop curve b (t) at the chip into the transient temperature rise curve a (t) at the chip is shown in formula (1):
a(t)＝deltaTjmax-b(t) (1)
in the formula (1), a (t) is a transient temperature rise curve at the chip, b (t) is a transient temperature drop curve at the chip, and deltaTjmax is the highest junction temperature rise of the chip when the power semiconductor module is heated.
With reference to the first aspect, further, according to the transient temperature rise curve a (t) at the chip and the transient temperature rise curve N (t) at the temperature sensor, a calculation formula for calculating the transient thermal resistance Zth from the chip to the temperature sensor is shown in formula (2):
in the formula (2), zth is the transient thermal resistance from the chip to the temperature sensor, a (t) is the transient temperature rise curve at the chip, N (t) is the transient temperature rise curve at the temperature sensor, and P is the power applied by the power supply to the power semiconductor module.
With reference to the first aspect, further, the expression of the transient thermal resistance curve Zthj-N of the chip-to-temperature sensor is shown in formula (3):
in the formula (3), i is the number of the heat resistance and heat capacity network units in the heat resistance and heat capacity network FOSTER model, and R i Is the first fitting parameter of the ith thermal resistance and heat capacity network unit, t is the temperature rise time of the power semiconductor module, tau i And the second fitting parameter is the second fitting parameter of the ith heat resistance and heat capacity network unit.
With reference to the first aspect, further, the expression of the pulse thermal resistance Zthj-N (pulse) of the chip-to-temperature sensor is shown in formula (4):
in the formula (4), z is a value obtained by taking the logarithm of the temperature rise time of the power semiconductor module, R (z) is a time constant spectrum, δ is the duty ratio of continuous pulses, and t is 1 Is the pulse width of the continuous pulse, and x is the pulse width t of the continuous pulse 1 Taking the value obtained by the logarithm of the number of the sample,
is a convolution operation symbol;
wherein the expression of the time constant spectrum R (z) is shown in equation (5):
in the formula (5), z is a value obtained by taking the logarithm of the temperature rise time of the power semiconductor module, R (z) is a time constant spectrum, and a (z) corresponds to the logarithm of the temperature rise time of the power semiconductor moduleA (z) = Zthj-N (z = lnt), w z (z) is an intermediate variable, w z (z)＝exp[z-exp(z)]，
Is a sign of deconvolution operation.
In a second aspect, the present invention provides an online evaluation apparatus for junction temperature of a power semiconductor module, including: the device comprises a power semiconductor module, a power supply, temperature acquisition equipment and a computer; the power semiconductor module is characterized by also comprising a liquid cooling platform used for cooling the power semiconductor module; the power semiconductor module comprises a temperature sensor and a chip, and the temperature acquisition equipment is connected between the power semiconductor module and the computer; the power semiconductor module and the computer are electrically connected to the power supply, respectively.
Compared with the prior art, the invention has the beneficial effects that:
1. the junction temperature is calculated through the pulse thermal resistance from the junction temperature point to the position of the temperature sensor, the temperature of the temperature sensor can be measured on line in the practical application process, and the junction temperature change can be calculated in real time according to the pulse thermal resistance curve.
2. The temperature measuring diode is used for replacing a common temperature sensor for sampling, so that the sampling frequency is higher, and the calculation is more accurate.
3. The method can be applied to various power semiconductor modules with embedded temperature sensors.
Drawings
Fig. 1 is a flowchart of an online evaluation method for junction temperature of a power semiconductor module according to an embodiment of the present invention;
fig. 2 is a schematic diagram of connection relationships among components in an online evaluation apparatus for junction temperature of a power semiconductor module according to an embodiment of the present invention;
FIG. 3 is a diagram of a transient temperature drop curve b (t) at a chip according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a transient temperature rise curve a (t) at the chip and a transient temperature rise curve N (t) at the temperature sensor provided by an embodiment of the present invention;
FIG. 5 is a schematic diagram of a transient thermal resistance curve ZThj-N of a chip-to-temperature sensor provided by an embodiment of the present invention;
FIG. 6 is a schematic diagram of the pulse thermal resistance ZThj-N (pulse) of the chip-to-temperature sensor provided by the embodiment of the invention;
in the figure: the method comprises the following steps of 1-a power semiconductor module, 2-a temperature measuring diode, 3-a power supply, 4-a temperature collecting device, 5-a liquid cooling platform and 6-a computer.
Detailed Description
The technical solution of the present patent will be described in further detail with reference to the following embodiments.
Reference will now be made in detail to embodiments of the present patent, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative only for the purpose of explaining the present patent and are not to be construed as limiting the present patent. In the present embodiment, the technical features in the embodiments may be combined with each other without conflict.
The first embodiment is as follows:
fig. 1 is a flowchart of a method for online evaluation of junction temperature of a power semiconductor module according to an embodiment of the present invention, where the flowchart only shows a logical sequence of the method according to the embodiment, and the steps shown or described in the sequence shown in fig. 1 may be performed in other possible embodiments of the present invention without conflict.
Referring to fig. 1, the method of the present embodiment specifically includes the following steps:
the method comprises the following steps: switching on a power supply of the power semiconductor module to heat the power semiconductor module, and recording a transient temperature rise curve N (t) at the temperature sensor through temperature acquisition equipment;
according to the calculation principle of the FOSTER thermal resistance network model, the power supply is connected with the power supply, the power supply applies power to the power semiconductor module to heat the power semiconductor module, and when the power semiconductor module is heated, enough heating time needs to be kept to ensure that the power semiconductor module reaches a thermal steady state, namely, the temperature of a chip is kept stable and does not rise any more. Meanwhile, because the response speed of temperature sensors such as thermistors is low, the sampling rate of 1MHz required by network model calculation cannot be realized, and therefore, the temperature sensors are replaced by temperature measuring diodes so as to achieve the sampling rate of 1MHz.
Step two: cutting off a power supply of the power semiconductor module, converting the temperature rise of the power semiconductor module into temperature reduction through the liquid cooling platform, and recording a transient temperature reduction curve b (t) at the chip through temperature acquisition equipment;
in order to ensure that the thermal resistance information is not lost, the power supply of the power semiconductor module is cut off, and the process of converting the temperature rise into the temperature reduction of the power semiconductor module is realized through the liquid cooling platform, wherein the time is less than 10 mu s. A schematic diagram of the measured transient temperature drop curve b (t) at the chip is shown in FIG. 3.
Step three: converting the transient temperature drop curve b (t) at the chip into a transient temperature rise curve a (t) at the chip;
the calculation formula for converting the transient temperature drop curve b (t) at the chip into the transient temperature rise curve a (t) at the chip is shown as formula (1):
a(t)＝deltaTjmax-b(t) (1)
in the formula (1), a (t) is a transient temperature rise curve at the chip, b (t) is a transient temperature drop curve at the chip, and deltaTjmax is the highest junction temperature rise of the chip when the power semiconductor module is heated.
The schematic diagram of the transient temperature rise curve a (t) at the chip obtained by calculation and the transient temperature rise curve N (t) at the temperature sensor measured by the temperature acquisition device is shown in fig. 4.
Step four: calculating the transient thermal resistance ZTh from the chip to the temperature sensor according to the transient temperature rise curve a (t) at the chip and the transient temperature rise curve N (t) at the temperature sensor;
according to the transient temperature rise curve a (t) at the chip and the transient temperature rise curve N (t) at the temperature sensor, a calculation formula for calculating the transient thermal resistance ZTh from the chip to the temperature sensor is shown as a formula (2):
in the formula (2), zth is the transient thermal resistance from the chip to the temperature sensor, a (t) is the transient temperature rise curve at the chip, N (t) is the transient temperature rise curve at the temperature sensor, and P is the power applied by the power supply to the power semiconductor module.
Step five: fitting the transient thermal resistance ZTh from the chip to the temperature sensor according to a pre-constructed thermal resistance and thermal capacitance network FOSTER model to obtain a transient thermal resistance curve ZThj-N from the chip to the temperature sensor;
the expression of the transient thermal resistance curve ZThj-N from the chip to the temperature sensor is shown in formula (3):
in the formula (3), i is the number of the heat resistance and heat capacity network units in the heat resistance and heat capacity network FOSTER model, and R i Is the first fitting parameter of the ith thermal resistance and heat capacity network unit, t is the temperature rise time of the power semiconductor module, tau i And the second fitting parameter is the second fitting parameter of the ith heat resistance and heat capacity network unit.
A schematic of the transient thermal resistance curve Zthj-N obtained by fitting the chip to temperature sensor is shown in fig. 5.
Step six: calculating pulse thermal resistance ZThj-N (pulse) from the chip to the temperature sensor according to a transient thermal resistance curve ZThj-N from the chip to the temperature sensor and the temperature measured at the temperature sensor in practical application;
the expression of the pulse thermal resistance ZThj-N (pulse) of the chip-to-temperature sensor is shown as the formula (4):
in the formula (4), z is a value obtained by taking the logarithm of the temperature rise time of the power semiconductor module, R (z) is a time constant spectrum, δ is the duty ratio of continuous pulses, and t is 1 Is the pulse width of the continuous pulse, and x is the pulse width t of the continuous pulse 1 Taking the value obtained by the logarithm of the number of the sample,
is a convolution operation symbol;
wherein, the expression of the time constant spectrum R (z) is shown as formula (5):
in the formula (5), z is a logarithmic value of the power semiconductor module temperature rise time, R (z) is a time constant spectrum, a (z) is an expression of a transient thermal resistance curve from the chip to the temperature sensor corresponding to the logarithmic value of the power semiconductor module temperature rise time, a (z) = Zthj-N (z = lnt), w z (z) is an intermediate variable, w z (z)＝exp[z-exp(z)]，
Is a sign of deconvolution operation.
A schematic diagram of the pulse thermal resistance Zthj-N (pulse) of the chip-to-temperature sensor obtained by the calculation is shown in fig. 6.
Step seven: and calculating the junction temperature of the power semiconductor module according to the pulse thermal resistance ZThj-N (pulse) from the chip to the temperature sensor.
In the online assessment method for junction temperature of the power semiconductor module provided by the embodiment, the junction temperature is calculated through the pulse thermal resistance from the junction temperature point to the position of the temperature sensor, the temperature of the temperature sensor can be measured online in the practical application process, and the junction temperature change can be calculated in real time according to the pulse thermal resistance curve; the temperature measuring diode replaces a common temperature sensor for sampling, so that the sampling frequency is higher, and the calculation is more accurate; and the method can be applied to various power semiconductor modules with embedded temperature sensors.
Example two:
the present embodiment provides an online evaluation apparatus for junction temperature of a power semiconductor module, as shown in fig. 2, including: the device comprises a power semiconductor module 1, a power supply 3, a temperature acquisition device 4 and a computer 6; the power semiconductor module cooling device also comprises a liquid cooling platform 5 used for cooling the power semiconductor module; the power semiconductor module 1 comprises a temperature sensor and a chip, and the temperature acquisition equipment 4 is connected between the power semiconductor module 1 and the computer 6; the power semiconductor module 1 and the computer 6 are electrically connected to the power supply 3, respectively. In order to reach the sampling rate of 1MHz, the temperature sensor is replaced by a temperature measuring diode 2, and the temperature measuring diode 2 is connected between the power semiconductor module 1 and the temperature acquisition equipment 4.
The power semiconductor module junction temperature online evaluation device provided by the embodiment of the invention can execute the power semiconductor module junction temperature online evaluation method provided by any embodiment of the invention, and has the corresponding functional modules and beneficial effects of the execution method.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (8)
1. A power semiconductor module junction temperature online evaluation method is characterized by comprising the following steps:
switching on a power supply of the power semiconductor module to heat the power semiconductor module, and recording a transient temperature rise curve N (t) at the temperature sensor through temperature acquisition equipment;
cutting off a power supply of the power semiconductor module, converting the temperature rise of the power semiconductor module into temperature reduction through the liquid cooling platform, and recording a transient temperature reduction curve b (t) at the chip through temperature acquisition equipment;
converting the transient temperature drop curve b (t) at the chip into a transient temperature rise curve a (t) at the chip;
calculating the transient thermal resistance ZTh from the chip to the temperature sensor according to the transient temperature rise curve a (t) at the chip and the transient temperature rise curve N (t) at the temperature sensor;
fitting the transient thermal resistance ZTh from the chip to the temperature sensor according to a pre-constructed thermal resistance and thermal capacitance network FOSTER model to obtain a transient thermal resistance curve ZThj-N from the chip to the temperature sensor;
calculating pulse thermal resistance ZThj-N (pulse) from the chip to the temperature sensor according to a transient thermal resistance curve ZThj-N from the chip to the temperature sensor;
and calculating the junction temperature of the power semiconductor module according to the pulse thermal resistance ZThj-N (pulse) from the chip to the temperature sensor and the temperature measured at the temperature sensor in practical application.
2. The power semiconductor module junction temperature online evaluation method of claim 1, wherein the temperature sensor is replaced by a temperature measurement diode so that a sampling rate reaches 1MHz.
3. The method for on-line assessment of power semiconductor module junction temperature as claimed in claim 1, wherein the power semiconductor module is powered off and the temperature of the power semiconductor module is changed from temperature rise to temperature drop by a liquid cooling platform, using less than 10 μ s.
4. The power semiconductor module junction temperature online evaluation method according to claim 1, wherein a calculation formula adopted for converting the transient temperature drop curve b (t) at the chip into the transient temperature rise curve a (t) at the chip is as shown in formula (1):
a(t)＝deltaTjmax-b(t) (1)
in the formula (1), a (t) is a transient temperature rise curve at the chip, b (t) is a transient temperature drop curve at the chip, and deltaTjmax is the highest junction temperature rise of the chip when the power semiconductor module is heated.
5. The power semiconductor module junction temperature online evaluation method according to claim 1, wherein a calculation formula for calculating the transient thermal resistance Zth from the chip to the temperature sensor according to the transient temperature rise curve a (t) at the chip and the transient temperature rise curve N (t) at the temperature sensor is as shown in formula (2):
in the formula (2), zth is the transient thermal resistance from the chip to the temperature sensor, a (t) is the transient temperature rise curve at the chip, N (t) is the transient temperature rise curve at the temperature sensor, and P is the power applied by the power supply to the power semiconductor module.
6. The power semiconductor module junction temperature online evaluation method according to claim 1, wherein the expression of the transient thermal resistance curve Zthj-N from the chip to the temperature sensor is shown in formula (3):
in the formula (3), i is the number of the heat resistance and heat capacity network units in the heat resistance and heat capacity network FOSTER model, and R i Is the first fitting parameter of the ith thermal resistance and heat capacity network unit, t is the temperature rise time of the power semiconductor module, tau i And the second fitting parameter is the second fitting parameter of the ith heat resistance and heat capacity network unit.
7. The power semiconductor module junction temperature online evaluation method according to claim 1, wherein the expression of the pulse thermal resistance Zthj-N (pulse) of the chip-to-temperature sensor is shown in formula (4):
in the formula (4), z is a value obtained by taking the logarithm of the temperature rise time of the power semiconductor module, R (z) is a time constant spectrum, δ is the duty ratio of continuous pulses, and t is 1 Is the pulse width of the continuous pulse, and x is the pulse width t of the continuous pulse 1 Taking the value obtained by the logarithm of the number of the sample,
is a convolution operation symbol;
wherein the expression of the time constant spectrum R (z) is shown in equation (5):
in the formula (5), z is a logarithmic value of the power semiconductor module temperature rise time, R (z) is a time constant spectrum, a (z) is an expression of a transient thermal resistance curve from the chip to the temperature sensor corresponding to the logarithmic value of the power semiconductor module temperature rise time, a (z) = Zthj-N (z = lnt), w z (z) is an intermediate variable, w z (z)＝exp[z-exp(z)]，
Is a sign of deconvolution operation.
8. An on-line power semiconductor module junction temperature evaluation device is characterized by comprising: the device comprises a power semiconductor module, a power supply, temperature acquisition equipment and a computer; the power semiconductor module is characterized by also comprising a liquid cooling platform used for cooling the power semiconductor module; the power semiconductor module comprises a temperature sensor and a chip, and the temperature acquisition equipment is connected between the power semiconductor module and the computer; the power semiconductor module and the computer are electrically connected to the power supply, respectively.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20210120706A1 (en) * | 2019-10-18 | 2021-04-22 | Fuji Electric Co., Ltd. | Semiconductor module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20210120706A1 (en) * | 2019-10-18 | 2021-04-22 | Fuji Electric Co., Ltd. | Semiconductor module |
| US11825591B2 (en) * | 2019-10-18 | 2023-11-21 | Fuji Electric Co., Ltd. | Semiconductor module |
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