CN115864109A - Solid laser crystal heat sink method without water cooling heat dissipation - Google Patents
Solid laser crystal heat sink method without water cooling heat dissipation Download PDFInfo
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Abstract
The invention discloses a solid laser crystal heat sink method without water cooling heat dissipation, which relates to the technical field of crystal heat dissipation and aims to solve the problems that in the prior art, a high-power solid laser crystal mostly adopts water cooling heat dissipation, and has a plurality of defects: for example, the water cooling module has large volume and can not work under the condition of weightlessness, and the water cooling module has the risks of micro leakage and water leakage. The first upper heat sink and the first lower heat sink are arranged on an upper heat dissipation surface and a lower heat dissipation surface of the slab crystal, the upper heat dissipation surface and the lower heat dissipation surface of the slab crystal are fixedly connected with the first upper heat sink and the first lower heat sink through reflow soldering, the first TEC semiconductor refrigerator is arranged on the first upper heat sink and on the first lower heat dissipation surface, and the number of the first TEC semiconductor refrigerators is two.
Description
Technical Field
The invention relates to the technical field of crystal heat dissipation, in particular to a solid laser crystal heat sink method without water cooling heat dissipation.
Background
With the continuous expansion of the application field of the ultrafast solid laser in recent years, the ultrafast solid laser is developing towards the directions of high power and high pulse energy, and the laser crystal is used as one of the core devices of the ultrafast solid laser, and the requirement on the performance of the ultrafast solid laser is higher and higher. In a high-power ultrafast solid laser, the higher the energy is, the higher the heat flux density of the laser crystal is, which requires that the heat sink of the laser crystal has good thermal conductivity so as to conduct away the heat in the laser crystal and ensure the normality of the laser.
Ultrafast laser is a new field of solid state laser development. Ultrafast pulse has the characteristics of extremely short duration, extremely high peak power, extremely wide spectrum and the like, and is widely applied to various fields such as industry, military, environment, energy, communication and the like. The extremely short pulse enables human beings to observe ultra-fast movement processes of atomic and molecular scales for the first time, and opens up a road for exploring the micro world. Extreme physical conditions can be generated by extremely high peak power, so that extreme phenomena such as large explosion in the universe, solar central temperature, nuclear explosion and the like can be simulated. The ultrafast laser has extremely short acting time and extremely small heat affected zone, and can ensure that surrounding normal tissues are not damaged when being applied to the medical treatment for treating or cutting pathological tissues. Ultrafast laser has also brought a revolution to other relevant scientific fields, has produced a series of emerging leading-edge subjects and techniques such as intense field physics, ultrafast nonlinear optics, precision metrology, hyperfine cold working.
However, in the prior art, the high-power solid laser crystal mostly adopts water cooling heat dissipation, and has a plurality of defects: the water cooling module has the problems of large volume, incapability of working under weightlessness conditions, micro leakage risk of the water cooling module, water leakage risk and the like; therefore, the existing requirements are not met, and a solid laser crystal heat sink method without water cooling heat dissipation is provided for the heat sink method.
Disclosure of Invention
The invention aims to provide a solid laser crystal heat sink method without water cooling heat dissipation, which aims to solve the problems that in the prior art provided by the background art, a high-power solid laser crystal mostly adopts water cooling heat dissipation, and has a plurality of defects: such as the water cooling module has large volume and can not work under the condition of weightlessness, and the water cooling module has the risks of micro-leakage and water leakage.
In order to achieve the purpose, the invention provides the following technical scheme: a solid laser crystal heat sink method without water cooling heat dissipation comprises the following steps: the heat sink comprises a slab crystal and a first U-shaped heat conduction copper pipe, wherein the slab crystal is arranged inside the first U-shaped heat conduction copper pipe, a first heat sink base is arranged at the opening end of the first U-shaped heat conduction copper pipe, and the first heat sink base is tightly combined with the first U-shaped heat conduction copper pipe;
further comprising:
the first upper heat sink and the first lower heat sink are arranged on the upper heat dissipation surface and the lower heat dissipation surface of the slab crystal, and the upper heat dissipation surface and the lower heat dissipation surface of the slab crystal are fixedly connected with the first upper heat sink and the first lower heat sink through reflow soldering;
the first TEC semiconductor refrigerators are arranged on the first upper heat sink upper heat dissipation surface and the first lower heat sink lower heat dissipation surface, the number of the first TEC semiconductor refrigerators is two, the cold surfaces of the two TEC semiconductor refrigerators are in contact with the first upper heat sink upper heat dissipation surface and the first lower heat sink lower heat dissipation surface, the two TEC semiconductor refrigerators are all arranged inside the first U-shaped heat conduction copper pipe, and the two TEC semiconductor refrigerators and the first U-shaped heat conduction copper pipe are coated with heat conduction silica gel to fill gaps.
Preferably, two indium metal sheets are arranged between the upper heat dissipation surface and the lower heat dissipation surface of the lath crystal and between the first upper heat sink and the first lower heat sink, and the thickness of the two indium metal sheets is 0.2-0.5 mm.
Preferably, the first heat sink base is made of copper, the surface of the first heat sink base is plated with gold, and the slab crystal heat sink is fixedly connected with the external water-passing optical bottom plate through the first heat sink base.
Preferably, the cross section of the first upper heat sink and the first lower heat sink is in a trapezoidal design shape, and the contact area of the first upper heat sink and the first lower heat sink with the first TEC semiconductor refrigerator is larger than the area of the welding surface of the first upper heat sink, the first lower heat sink and the slab crystal.
Preferably, a hollow part inside the first U-shaped heat conduction copper pipe is provided with liquid metal.
Preferably, the application method of the solid laser crystal heat sink method without water cooling heat dissipation comprises the following implementation methods:
laser and pumping light generate heat in the crystal, the upper and lower two heat conduction heat sinks transfer the heat to the upper and lower ends, the heat is transmitted into the U-shaped heat conduction copper pipe through the upper and lower TEC semiconductor refrigerators, and finally the heat is transferred to the water-through optical bottom plate through the U-shaped heat conduction copper pipe and the crystal heat sink base.
Preferably, the implementation method further includes a heat dissipation strategy, and the heat dissipation strategy includes the following specific steps:
s11, uniformly dividing the surface of the target laser crystal into N blocks, wherein the whole surface area of the laser crystal is
The overall mass of the laser crystal is->
So that the surface area of one of the blocks is->
Wherein one ingot has a mass of
Wherein n is the number of terms, and the working environment temperature of the central position of each block of the target laser crystal is acquired>
And permissive ambient temperature->
In which>
In order to grant a maximum value for an ambient safety temperature>
Is the minimum value of the allowable environment safety temperature;
s12, based on the working environment temperature of the center position of each crystal block of the target laser crystal
And the location permissive ambient temperature>
Substituting the temperature data into a temperature data comparison module for temperature comparison to obtain the safe time interval of each crystal block>
The heat which needs to be dissipated at the position is determined>
Thus obtaining; />
Wherein->
For the time that the laser is activated, is>
For the specific heat of the crystal, and then calculate that the first upper heat sink and the first lower heat sink need to be taken together at a safe time interval->
The heat which needs to be led out is selected>
Wherein->
For the safe time interval of the ith crystal block>
The heat to be dissipated at the location;
s13, because the heat is transmitted into the U-shaped heat conduction copper pipe through the upper TEC semiconductor refrigerator and the lower TEC semiconductor refrigerator, the heat is finally transmitted to the water optical bottom plate through the U-shaped heat conduction copper pipe and the crystal heat sink base, and a heat transmission model is established according to thermodynamic parameters of the heat sink, the semiconductor refrigerators, the U-shaped heat conduction copper pipe, the crystal heat sink base and the water optical bottom plate and the introduced water temperature;
s14, setting a safety time interval
The heat which needs to be led out is selected>
Introducing a heat transfer model based on the derived heat>
Determining the water flow of the water-flowing optical base plate so as to judge the heat to be conducted>
Is quickly derived if based on the derived heat->
The determined water flow of the water-passing optical backplane->
Is less than the rated water flow quantity of the water-passing optical bottom plate>
Then the water-feeding optical bottom plate is controlled to feed water with the flow rate being->
Ending the calculation; if based on the derived heat->
Water flow rate determined on a water-conducting optical backplane->
Is greater than the rated water flow quantity of the water-passing optical bottom plate>
If yes, operation S15 is performed;
s15, introducing rated water flow into the water optical bottom plate
And then calculating the heat difference value of the radiation, and supplementing the redundant heat difference value by controlling the parameters of an external radiator and an external radiating fan so as to ensure that the working temperature of the laser crystal reaches the optimal working condition.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the invention, the TEC semiconductor refrigerator and the U-shaped heat conduction copper pipe are arranged in the crystal, laser and pumping light generate heat in the crystal, the upper and lower heat conduction heat sinks transmit the heat to the upper and lower ends, the heat is transmitted into the U-shaped heat conduction copper pipe through the upper and lower TEC semiconductor refrigerators, and finally the heat is transmitted to the water-flowing optical bottom plate through the U-shaped heat conduction copper pipe and the crystal heat sink base, and the TEC semiconductor refrigerator and the U-shaped heat conduction copper pipe are used for realizing directional transmission of the heat, and meanwhile, a heat sink method without water cooling heat dissipation is provided, so that the problem of small-volume high-efficiency heat dissipation of a high-power laser is solved, and the defects of the high-power solid laser crystal caused by water cooling heat dissipation in the prior art are avoided: such as the water cooling module has large volume and can not work under the condition of weightlessness, and the water cooling module has the risks of micro-leakage and water leakage.
2. According to the heat transfer relation among the laser crystal, the heat sink and the heat conduction and dissipation structure, the heat sink is combined to serve as the working performance of an intermediate link, the temperature distribution of each position of the laser crystal after heat dissipation meets the use requirement through calculation of heat to be dissipated at the position in a safe time interval, the effectiveness of a laser temperature control system is guaranteed through closed-loop design, normal heat dissipation of the laser is guaranteed, and the increase of volume and weight caused by redundancy design is avoided.
Drawings
FIG. 1 is a schematic structural diagram of a front view of a slab solid laser crystal heat sink device according to the present invention;
FIG. 2 is a front view of the crystal heat sink device of the rod-shaped solid laser of the present invention;
in the figure: 100. a slab crystal; 101. a first upper heat sink; 102. a first lower heat sink; 103. a first heat sink base; 104. a metallic indium sheet; 105. a first TEC semiconductor cooler; 106. a first U-shaped heat conducting copper pipe; 200. a rod-like crystal; 201. a second upper heat sink; 202. a second lower heat sink; 203. a second heat sink base; 204. a second TEC semiconductor refrigerator; 205. the second U type heat conduction copper pipe.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Example 1
Referring to fig. 1, an embodiment of the present invention: a solid laser crystal heat sink method without water cooling heat dissipation comprises the following steps: the heat sink comprises a slab crystal 100 and a first U-shaped heat conduction copper pipe 106, wherein the slab crystal 100 is arranged inside the first U-shaped heat conduction copper pipe 106, a first heat sink base 103 is arranged at the opening end of the first U-shaped heat conduction copper pipe 106, and the first heat sink base 103 is tightly combined with the first U-shaped heat conduction copper pipe 106;
further comprising:
a first upper heat sink 101 and a first lower heat sink 102 which are mounted on an upper heat dissipation surface and a lower heat dissipation surface of the slab crystal 100, the upper heat dissipation surface and the lower heat dissipation surface of the slab crystal 100 being fixedly connected to the first upper heat sink 101 and the first lower heat sink 102 by reflow soldering;
the two first TEC semiconductor refrigerators 105 are arranged on the upper heat dissipation surface of the first upper heat sink 101 and the lower heat dissipation surface of the first lower heat sink 102, the two first TEC semiconductor refrigerators 105 are in contact with the upper heat dissipation surface of the first upper heat sink 101 and the lower heat dissipation surface of the first lower heat sink 102, the two first TEC semiconductor refrigerators 105 are arranged inside the first U-shaped heat conduction copper pipe 106, and the two first TEC semiconductor refrigerators 105 and the first U-shaped heat conduction copper pipe 106 are coated with heat conduction silica gel to fill gaps.
Referring to fig. 1, two indium metal sheets 104 are mounted between the upper and lower heat dissipating surfaces of the slab crystal 100 and the first upper and lower heat sinks 101 and 102, and the thickness of the two indium metal sheets 104 is 0.2-0.5 mm.
Referring to fig. 1, the first heat sink base 103 is made of copper, the surface of the first heat sink base 103 is plated with gold, and the slab crystal 100 is fixedly connected to an external water-passing optical backplane through the first heat sink base 103.
Referring to fig. 1, the cross section of the first upper heat sink 101 and the first lower heat sink 102 is in a trapezoidal design shape, and the contact area between the first upper heat sink 101 and the first lower heat sink 102 and the first TEC semiconductor cooler 105 is larger than the area of the welding surface between the first upper heat sink 101 and the first lower heat sink 102 and the slab crystal 100.
Referring to fig. 1, a hollow portion inside the first U-shaped heat conducting copper tube 106 is disposed with liquid metal.
Referring to fig. 1, a method for using a solid laser crystal heat sink method without water cooling heat dissipation includes the following implementation methods:
laser and pumping light generate heat inside the crystal, the first upper heat sink 101 and the first lower heat sink 102 transfer the heat to the upper end and the lower end, the heat is transmitted to the first U-shaped heat conduction copper pipe 106 through the upper first TEC semiconductor refrigerator 105 and the lower first TEC semiconductor refrigerator 105, and finally the heat is transferred to the water optical bottom plate through the first U-shaped heat conduction copper pipe 106 and the first heat sink base 103 of the crystal.
Example 2
As shown in fig. 2, a rod-shaped solid laser crystal heat sink includes a rod-shaped crystal 200, a second upper heat sink 201, a second lower heat sink 202, a second heat sink base 203, a second TEC semiconductor cooler 204, and a second U-shaped heat conducting copper tube 205;
in order to reduce the thermal contact resistance between the contact surfaces of all parts of the rod-shaped solid laser crystal heat sink, the control is needed to be carried out from multiple aspects and multiple means, and the specific construction process flow is as follows:
referring to fig. 2, a certain force is applied between the second upper heat sink 201 and the second lower heat sink 202 by screws to hold the rod-shaped crystal 200 therebetween, and in order to ensure the heat dissipation performance of the contact surface, the rod-shaped crystal 200 is wrapped with the indium metal sheets 104 having a thickness of 0.05-0.1 mm.
Referring to fig. 2, the second upper heat sink 201 and the second lower heat sink 202 use copper with high thermal conductivity as a base material, and the surface precision needs to be ensured during processing, and gold plating needs to be performed on the surface of the heat sinks in order to prevent the copper from being exposed in air and oxidized.
Referring to fig. 2, the heat dissipating surfaces of the second upper heat sink 201 and the second lower heat sink 202 are respectively in contact with the cold surface of the second TEC semiconductor cooler 204, and in order to ensure the heat dissipating effect, the contact surfaces need to be coated with a thin layer of heat conductive silicone grease to fill the gap.
Referring to fig. 2, two second TEC semiconductor coolers 204 are disposed on both sides of an inner wall of the second U-shaped heat conducting copper tube 205, and meanwhile, a thin layer of heat conducting silicone grease is required to be coated on a contact surface between the second TEC semiconductor cooler 204 and the second U-shaped heat conducting copper tube 205 to fill the gap.
Referring to fig. 2, in order to improve the heat conductivity of the second U-shaped heat conducting copper tube 205, the second U-shaped heat conducting copper tube 205 may be filled with liquid metal with better heat conductivity, so as to increase the heat conductivity.
Referring to fig. 2, a second U-shaped heat conducting copper tube 205 is tightly combined with a second crystal heat sink base 203, the second crystal heat sink base 203 uses copper as a base material, and the whole bar-shaped solid laser crystal heat sink is fixed on a water-passing optical bottom plate through the second crystal heat sink base 203 by surface gold plating.
The rod-shaped solid laser crystal heat sink can realize the directional transmission of heat by the implementation method: laser and pumping light generate heat in the crystal, the second upper heat sink 201 and the second lower heat sink 202 transmit the heat to the left end and the right end, the heat is transmitted into the second U-shaped heat conducting copper pipe 205 through the left second TEC semiconductor cooler 204 and the right second TEC semiconductor cooler 204, and finally the heat is transmitted to the water optical bottom plate through the second U-shaped heat conducting copper pipe 205 and the second heat sink base 203 of the crystal.
Example 3
Referring to fig. 1, an embodiment of the present invention: a solid laser crystal heat sink method without water cooling heat dissipation comprises the following steps: the heat sink comprises a slab crystal 100 and a first U-shaped heat conduction copper pipe 106, wherein the slab crystal 100 is arranged inside the first U-shaped heat conduction copper pipe 106, a first heat sink base 103 is arranged at the opening end of the first U-shaped heat conduction copper pipe 106, and the first heat sink base 103 is tightly combined with the first U-shaped heat conduction copper pipe 106;
further comprising:
a first upper heat sink 101 and a first lower heat sink 102 which are mounted on an upper heat dissipation surface and a lower heat dissipation surface of the slab crystal 100, the upper heat dissipation surface and the lower heat dissipation surface of the slab crystal 100 being fixedly connected to the first upper heat sink 101 and the first lower heat sink 102 by reflow soldering;
the two first TEC semiconductor refrigerators 105 are arranged on the upper heat dissipation surface of the first upper heat sink 101 and the lower heat dissipation surface of the first lower heat sink 102, the two first TEC semiconductor refrigerators 105 are in contact with the upper heat dissipation surface of the first upper heat sink 101 and the lower heat dissipation surface of the first lower heat sink 102, the two first TEC semiconductor refrigerators 105 are arranged inside the first U-shaped heat conduction copper pipe 106, and the two first TEC semiconductor refrigerators 105 and the first U-shaped heat conduction copper pipe 106 are coated with heat conduction silica gel to fill gaps.
Referring to fig. 1, two indium metal sheets 104 are mounted between the upper and lower heat dissipating surfaces of the slab crystal 100 and the first upper and lower heat sinks 101 and 102, and the thickness of the two indium metal sheets 104 is 0.2-0.5 mm.
Referring to fig. 1, the first heat sink base 103 is made of copper, the surface of the first heat sink base 103 is plated with gold, and the slab crystal 100 is fixedly connected to an external water-passing optical backplane through the first heat sink base 103.
Referring to fig. 1, the cross section of the first upper heat sink 101 and the first lower heat sink 102 is a trapezoidal design, and the contact area between the first upper heat sink 101 and the first lower heat sink 102 and the first TEC semiconductor cooler 105 is larger than the area of the joint area between the first upper heat sink 101 and the first lower heat sink 102 and the slab crystal 100.
Referring to fig. 1, a hollow portion inside the first U-shaped heat conducting copper tube 106 is disposed with liquid metal.
Referring to fig. 1, a method for using a solid laser crystal heat sink method without water cooling heat dissipation includes the following implementation methods:
laser and pumping light generate heat inside the crystal, the first upper heat sink 101 and the first lower heat sink 102 transfer the heat to the upper end and the lower end, the heat is transmitted to the first U-shaped heat conduction copper pipe 106 through the upper first TEC semiconductor refrigerator 105 and the lower first TEC semiconductor refrigerator 105, and finally the heat is transferred to the water optical bottom plate through the first U-shaped heat conduction copper pipe 106 and the first heat sink base 103 of the crystal.
The implementation method further comprises a heat dissipation strategy, wherein the heat dissipation strategy comprises the following specific steps:
s11, uniformly dividing the surface of the target laser crystal into N blocks, wherein the whole surface area of the laser crystal is
The overall mass of the laser crystal is->
So that the surface area of one of the blocks is->
Wherein one ingot has a mass of
Wherein n is the number of terms, and the working environment temperature in the central position of each block of the target laser crystal is obtained>
And permissive ambient temperature->
Wherein->
For granting a maximum value of the ambient safety temperature, is selected>
Is the minimum value of the allowable environment safety temperature;
s12, based on the working environment temperature of the central position of each block of the target laser crystal
And the location permits ambient temperature &>
Substituting the temperature data into a temperature data comparison module to compare the temperature to obtain the safe time interval->
The heat which needs to be dissipated at the position is determined>
Thus obtaining; />
Wherein->
For the time that the laser is activated, is>
For the specific heat of the crystal, it is then calculated that the first upper heat sink 101 and the first lower heat sink 102 need to be taken together at a safe time interval->
The heat which needs to be led out is selected>
In which>
For the safe time interval of the ith crystal block>
The heat to be dissipated at the location;
s13, because heat is transmitted into the U-shaped heat conduction copper pipe through the upper TEC semiconductor refrigerator and the lower TEC semiconductor refrigerator, the heat is finally transmitted to the water optical bottom plate through the U-shaped heat conduction copper pipe and the crystal heat sink base, and a heat transmission model is established according to thermodynamic parameters of the heat sink, the semiconductor refrigerators, the U-shaped heat conduction copper pipe, the crystal heat sink base and the water optical bottom plate and the introduced water temperature;
s14, setting a safety time interval
The heat which needs to be led out is selected>
Introducing a heat transfer model based on the derived heat->
Determining the water flow of the water-flowing optical bottom plate so as to combine the heat to be led out>
Is quickly derived if based on the derived heat->
The determined water flow of the water-passing optical backplane->
Is less than the rated water flow quantity of the water-passing optical bottom plate>
Then the water-feeding optical bottom plate is controlled to feed water with the flow rate being->
Ending the calculation; if based on derived heat
The determined water flow of the water-passing optical backplane->
Rated water flow rate greater than water flow optical bottom plate->
If yes, operation S15 is performed;
s15, introducing rated water flow into the water optical bottom plate
Then calculating the difference value of the emitted heat, and controlling the parameters of the external radiator and the external radiating fan to realize the heat dissipationRedundant heat difference value is supplemented, so that the working temperature of the laser crystal reaches the optimal working condition, the heat transfer relation among the laser crystal, the heat sink and the heat conduction and radiation structure is combined, the working performance of the heat sink as an intermediate link is combined, the heat which needs to be radiated at the position in a safe time interval is calculated, the temperature distribution of each position of the laser crystal after heat radiation meets the use requirement, the effectiveness of a laser temperature control system is ensured through closed-loop design, the normal heat radiation of the laser is ensured, and the increase of volume and weight caused by redundant design is avoided.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented by other methods. The above-described apparatus embodiments are merely illustrative, and for example, the division of the units into only one type of logical functional division may be implemented in practice with other division methods, and for example, multiple units or components may be combined or integrated into another system, or some features may be omitted, or not implemented. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection of devices or units through some communication interfaces, and may be in an electrical, mechanical or other form.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art will understand that: those skilled in the art can still make modifications or changes to the embodiments described in the foregoing embodiments, or make equivalent substitutions for some features, within the scope of the disclosure; such modifications, changes or substitutions do not depart from the spirit and scope of the embodiments of the present invention, and they should be construed as being included therein. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (7)
1. A solid laser crystal heat sink method without water cooling heat dissipation comprises a slab crystal (100) and a first U-shaped heat conduction copper pipe (106), wherein the slab crystal (100) is arranged inside the first U-shaped heat conduction copper pipe (106), a first heat sink base (103) is arranged at the opening end of the first U-shaped heat conduction copper pipe (106), and the first heat sink base (103) is tightly combined with the first U-shaped heat conduction copper pipe (106);
it is characterized by also comprising:
the first upper heat sink (101) and the first lower heat sink (102) are arranged on the upper heat dissipation surface and the lower heat dissipation surface of the slab crystal (100), and the upper heat dissipation surface and the lower heat dissipation surface of the slab crystal (100) are fixedly connected with the first upper heat sink (101) and the first lower heat sink (102) through reflow soldering;
the first TEC semiconductor refrigerator (105) is arranged on the upper heat dissipation surface of the first upper heat sink (101) and the lower heat dissipation surface of the first lower heat sink (102), the number of the first TEC semiconductor refrigerator (105) is two, the cold surface of the first TEC semiconductor refrigerator (105) is in contact with the upper heat dissipation surface of the first upper heat sink (101) and the lower heat dissipation surface of the first lower heat sink (102), the two TEC semiconductor refrigerators (105) are arranged inside the first U-shaped heat conduction copper pipe (106), and the two TEC semiconductor refrigerators (105) and the first U-shaped heat conduction copper pipe (106) are coated with heat conduction silica gel to fill gaps.
2. The heat sink method for the solid laser crystal without water cooling heat dissipation of claim 1, wherein: and two indium metal sheets (104) are arranged between the upper heat dissipation surface and the lower heat dissipation surface of the slab crystal (100) and between the first upper heat sink (101) and the first lower heat sink (102), and the thickness of the two indium metal sheets (104) is 0.2-0.5 mm.
3. The heat sink method for the solid laser crystal without water cooling heat dissipation of claim 2, wherein: the first heat sink base (103) adopts copper as a base material, the surface of the first heat sink base (103) is plated with gold, and the slab crystal (100) is fixedly connected with the outside through a water optical bottom plate through the first heat sink base (103).
4. The heat sink method for the solid laser crystal without water cooling heat dissipation of claim 3, wherein: the cross section of the first upper heat sink (101) and the first lower heat sink (102) is in a trapezoidal design shape, and the contact area of the first upper heat sink (101) and the first lower heat sink (102) and the first TEC semiconductor cooler (105) is larger than the area of the welding surface of the first upper heat sink (101), the first lower heat sink (102) and the lath crystal (100).
5. The heat sink method for the solid laser crystal without water cooling heat dissipation of claim 4, wherein: and liquid metal is arranged at the hollow part inside the first U-shaped heat conduction copper pipe (106).
6. The heat sink method for the solid laser crystal without water cooling heat dissipation of claim 5, characterized by comprising the following implementation methods:
laser and pumping light generate heat in the crystal, the upper and lower two heat conduction heat sinks transfer the heat to the upper and lower ends, the heat is transmitted into the U-shaped heat conduction copper pipe through the upper and lower TEC semiconductor refrigerators, and finally the heat is transferred to the water-through optical bottom plate through the U-shaped heat conduction copper pipe and the crystal heat sink base.
7. The solid laser crystal heat sink method without water cooling heat dissipation according to claim 6, wherein the implementation method further comprises a heat dissipation strategy, and the heat dissipation strategy comprises the following specific steps:
s11, uniformly dividing the surface of the target laser crystal into N blocks, wherein the whole surface area of the laser crystal is
Laser crystalThe overall mass of the body is->
So that the surface area of one of the blocks is +>
Wherein one ingot has a mass of
Wherein n is the number of terms, and the working environment temperature of the central position of each block of the target laser crystal is acquired>
And permitting an ambient safe temperature->
Wherein->
In order to permit a maximum value for the safe temperature of the environment,
is the minimum value of the allowable environment safety temperature;
s12, based on the working environment temperature of the central position of each block of the target laser crystal
And the location permissive ambient temperature>
Substituting the temperature data into a temperature data comparison module for temperature comparison to obtain the safe time interval of each crystal block>
The heat which needs to be dissipated at the position is determined>
Thereby obtainingDischarging; />
Wherein->
For the time that the laser is activated>
For the specific heat of the crystal, the calculation of the total requires the first upper heat sink (101) and the first lower heat sink (102) to be in a safe time interval +>
The heat which needs to be led out is selected>
In which>
For the safe time interval of the ith crystal block>
The amount of heat that needs to be dissipated at that location;
s13, because heat is transmitted into the U-shaped heat conduction copper pipe through the upper TEC semiconductor refrigerator and the lower TEC semiconductor refrigerator, the heat is finally transmitted to the water optical bottom plate through the U-shaped heat conduction copper pipe and the crystal heat sink base, and a heat transmission model is established according to thermodynamic parameters of the heat sink, the semiconductor refrigerators, the U-shaped heat conduction copper pipe, the crystal heat sink base and the water optical bottom plate and the introduced water temperature;
s14, setting a safety time interval
The heat which needs to be led out is selected>
Introducing a heat transfer model based on the derived heat->
Determining the water flow of the water-flowing optical base plate so as to judge the heat to be conducted>
Is quickly derived if based on the derived heat->
The determined water flow of the water-passing optical backplane->
Is less than the rated water flow quantity of the water-passing optical bottom plate>
Then the water-passing optical bottom plate is controlled to pass in the flow rate of->
Finishing the calculation; if based on the derived heat->
The determined water flow of the water-passing optical backplane->
Is greater than the rated water flow quantity of the water-passing optical bottom plate>
If yes, operation S15 is performed;
s15, introducing rated water flow into the water optical bottom plate
And then calculating the difference value of the emitted heat, and supplementing the redundant difference value of the heat by controlling the parameters of an external radiator and an external radiating fan so as to ensure that the working temperature of the laser crystal reaches the optimal working condition. />
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101252248A (en) * | 2007-11-30 | 2008-08-27 | 西安电子科技大学 | Crystal hot pipe heat sink refrigerating method in diode pumping solid laser |
| CN101494352A (en) * | 2009-02-17 | 2009-07-29 | 西北大学 | Water, wind mixing refrigerating method and apparatus for whole solid state laser |
| CN102064469A (en) * | 2010-10-12 | 2011-05-18 | 北京理工大学 | Diode pumping slab fixed laser |
| CN108233156A (en) * | 2018-02-10 | 2018-06-29 | 北京工业大学 | A kind of cooling system based on slab laser |
| CN108666856A (en) * | 2018-08-07 | 2018-10-16 | 核工业理化工程研究院 | Power stability type solid state laser and control method |
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|---|---|---|---|---|
| CN101252248A (en) * | 2007-11-30 | 2008-08-27 | 西安电子科技大学 | Crystal hot pipe heat sink refrigerating method in diode pumping solid laser |
| CN101494352A (en) * | 2009-02-17 | 2009-07-29 | 西北大学 | Water, wind mixing refrigerating method and apparatus for whole solid state laser |
| CN102064469A (en) * | 2010-10-12 | 2011-05-18 | 北京理工大学 | Diode pumping slab fixed laser |
| CN108233156A (en) * | 2018-02-10 | 2018-06-29 | 北京工业大学 | A kind of cooling system based on slab laser |
| CN108666856A (en) * | 2018-08-07 | 2018-10-16 | 核工业理化工程研究院 | Power stability type solid state laser and control method |
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