CN108233156A - A kind of cooling system based on slab laser - Google Patents

A kind of cooling system based on slab laser Download PDF

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Publication number
CN108233156A
CN108233156A CN201810137982.7A CN201810137982A CN108233156A CN 108233156 A CN108233156 A CN 108233156A CN 201810137982 A CN201810137982 A CN 201810137982A CN 108233156 A CN108233156 A CN 108233156A
Authority
CN
China
Prior art keywords
heat
laser
doped yttrium
yttrium vanadate
borneol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810137982.7A
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Chinese (zh)
Inventor
王旭葆
王宏超
邓培
张洪曼
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Beijing University of Technology
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Beijing University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing University of Technology filed Critical Beijing University of Technology
Priority to CN201810137982.7A priority Critical patent/CN108233156A/en
Publication of CN108233156A publication Critical patent/CN108233156A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/04—Arrangements for thermal management
    • H01S3/0405—Conductive cooling, e.g. by heat sinks or thermo-electric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/04—Arrangements for thermal management
    • H01S3/042—Arrangements for thermal management for solid state lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
    • H01S3/1673—YVO4 [YVO]

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention discloses a kind of cooling systems based on slab laser, crystal shape of the cooling system based on slab laser is oriented conduction Non-water-cooled heat dissipation, the system is including Nd-doped yttrium vanadate crystal, high heat conduction is heat sink and electronics borneol, and Nd-doped yttrium vanadate crystal is the pumping source of laser；The both sides of Nd-doped yttrium vanadate crystal are provided with that high heat conduction is heat sink, and the outside that high heat conduction is heat sink is equipped with electronics borneol.The heat that Nd-doped yttrium vanadate crystal generates by indium metal to top surface again to bottom surface, then via electronics borneol, heat-conducting copper pipe to laser pedestal and shell at, finally enter in working environment.This programme is completed to radiate, substantially reduces the entire length of laser, made laser more flexible by the way of Non-water-cooled making heat directional transmissions mode by way of heat transfer, can be used in the case of the water coolings operational difficulties such as weightlessness.

Description

A kind of cooling system based on slab laser
Technical field
The present invention relates to field of laser device technology and electronic technology field, and in particular to a kind of using electronics borneol heat dissipation system The heat concentrator part thermal control of the small-volume large-power density of system.
Background technology
Laser or electronic chip are widely used in the fields such as material processing and medical treatment, and to highly integrated and High power direction is fast-developing.Therefore, the high heat flux density heat dissipation problem generated also becomes getting worse therewith, and becomes and work as One bottleneck of modern industry integrated development.At present, the heat concentrator part of high power density is mainly dissipated by the way of water cooling Heat.But since conventional water cooling method is bulky, difficult, to high power solid state laser it is vehicle-mounted, airborne, The Military Application of space-based platform, the mobile operation of the commercial Applications such as welding, cleaning, the engraving at specialities position had compared with the day of one's doom Condition processed.Also, it can not be used in the space with below-G conditions using the device of water-cooling.
At present, traditional heat-dissipating mode can not meet the needs of current highly integrated, small size, high power device.There is an urgent need for adopt Meet the needs of its heat dissipation with a kind of new heat dissipation element with high heat dispersion and good encapsulating structure, it is big to solve Power small size heat concentrator part effectively radiates this world-famous puzzle.
Invention content
The present invention uses water-cooling to solve high power semiconductor lasers in the prior art, it is big there are machine volume and The problem of can not working under below-G conditions, is provided a kind of small-volume large-power semiconductor to be radiated using heat pipe radiating system and swashed Light device.
The technical solution adopted by the present invention is a kind of cooling system based on slab laser, which is based on lath The crystal shape of laser be oriented conduction Non-water-cooled heat dissipation, the system include Nd-doped yttrium vanadate crystal, high heat conduction is heat sink and Electronics borneol, Nd-doped yttrium vanadate crystal are the pumping source of laser；It is heat sink that the both sides of Nd-doped yttrium vanadate crystal are provided with high heat conduction, The outside that high heat conduction is heat sink is equipped with electronics borneol.
It is pumped in the end face both sides of Nd-doped yttrium vanadate crystal using diode laser matrix, to ensure heat distribution Uniformity simultaneously ensures to realize sufficiently high power output.
The section that high heat conduction is heat sink is trapezoidal, two groups of high heat conductions are heat sink both sides for being symmetrically distributed in Nd-doped yttrium vanadate crystal. The base area that high heat conduction is heat sink is more than top surface area；The top surface that high heat conduction is heat sink is welded on Nd-doped yttrium vanadate crystal with indium metal Surface.
Electronics borneol is pasted by thermal conductive silicon in the heat sink bottom surface of high heat conduction.The outside of electronics borneol is equipped with heat-conducting copper pipe, Each heat-conducting copper pipe is laid side by side, the pedestal and cage connection of heat-conducting copper pipe and laser.
Be achieved in Nd-doped yttrium vanadate crystal generation heat by indium metal to top surface again to bottom surface, then via electronic refrigerating Piece, heat-conducting copper pipe to laser pedestal and shell at, finally enter in working environment.
Nd-doped yttrium vanadate crystal is the operation material of slab laser, and traditional laser is mostly single-side pumping, pump light Heat is generated in Nd-doped yttrium vanadate crystal, heat is unevenly distributed in Nd-doped yttrium vanadate crystal, thus can cause neodymium-doped vanadium Thermal lensing effect is generated in sour yttrium crystal, influences the output quality of pump light.The form of double-end pumping is used first, by neodymium-doped The heat that yttrium vanadate crystal generates carries out Homogenization Treatments, substantially reduces in Nd-doped yttrium vanadate crystal and generates thermal lensing effect；It mixes The heat that neodymium yttrium vanadate crystal generates is protected by high heat conduction is heat sink, the progress of electronics borneol reasonably, uniaxially, is effectively conducted The heat of card output is quickly exported, and greatly improves the working efficiency of Nd-doped yttrium vanadate crystal and laser beam output quality.
The small-volume large-power semiconductor laser to be radiated using electronics borneol cooling system, including Nd：YVO4Crystal, mirror Group, high heat conduction are heat sink and two side pumping of semiconductor cooler, and a heat-conducting pad is respectively put preferably to transmit heat in upper and lower both sides With fixation.Truncated rectangular pyramids shape high heat conduction to be placed in heat-conducting pad opposite side heat sink again.One layer very thin lead is applied with heat sink opposite side Hot silicon, then combined with electronics borneol, most it is followed by heat-dissipating pipe.
Light generates heat by crystals, heat flowed to from the face surface two big up and down of crystal it is heat sink, then by tec cores Piece realizes that (tec chips can actively make heat be transferred to heat pipe direction by heat sink direction, while prevent heat to hot directional transmissions The reflux of amount), laser enclosure is finally transferred heat to pedestal so as to distribute heat in its working environment by heat pipe.
Compared with prior art, the present invention has the advantages that.
1st, this programme employs double-end laser diode array pumping crystal, be crystal head and the tail both ends heat difference reduce from And make heat crystals be distributed more uniformly to reduce thermal lensing effect
2nd, this programme is completed to dissipate by the way of Non-water-cooled making heat directional transmissions mode by way of heat transfer Heat substantially reduces the entire length of laser, makes laser more flexible, can be in the situation of the water coolings operational difficulties such as weightlessness Lower use.
Description of the drawings
Fig. 1 is the small-volume large-power semiconductor laser of the present invention using the heat dissipation of electronics borneol cooling system Structure.
Fig. 2 is the schematic diagram of cooling down of the present invention.
Specific embodiment
As shown in Figs. 1-2, the present invention provides a kind of electronics borneol cooling system based on strip type laser, including： Nd：YAG crystal, microscope group, high heat conduction are heat sink, tec chips.To reduce the thermal contact resistance between hot interface, need from multiple sides Face and multiple means control, and specific embodiment is：
In Nd：The upper and lower surface of YAG crystal respectively with the heat sink combination of high heat conduction, used between high heat conduction is heat sink heat conductive pad with It avoids causing to damage, the thickness of heat conductive pad is 0.2~0.5mm；
Hot interface surface pattern and dimension control, what is controlled here is the precision of heat sink upper and lower surface, is usually come Say that roughness should be less than 1.6, flatness is less than 0.1mm/100mm × 100mm.Hot interface surface is not allow for connecing tool marks and connect Knife mark is ground when necessary.
High heat conduction is heat sink to reduce thermal contact resistance between electronics borneol by the way of coated with thermally conductive silicone grease, and heat-conducting silicone grease is thick Degree should be as thin as possible, need to only fill the minim gap between the heat sink borneol with electronics of high heat conduction.
The limitation that the present invention is received for existing strip type superpower laser in terms of water cooling is used, it is proposed that Yi Zhongwu The radiating mode of water cooling.Solves electronics borneol again using heat sink and electronics borneol combination and the heat conductivility for increasing product The problem of uneven heating.
The peak power output of high power semiconductor lasers described in present embodiment is up to 100W, package size 350mm×190mm×130mm。

Claims (3)

1. a kind of cooling system based on slab laser, it is characterised in that：Crystal of the cooling system based on slab laser Shape is oriented conduction Non-water-cooled heat dissipation, and the system is including Nd-doped yttrium vanadate crystal, high heat conduction is heat sink and electronics borneol, neodymium-doped Yttrium vanadate crystal is the pumping source of laser；The both sides of Nd-doped yttrium vanadate crystal are provided with that high heat conduction is heat sink, and high heat conduction is heat sink Outside is equipped with electronics borneol；
It is pumped in the end face both sides of Nd-doped yttrium vanadate crystal using diode laser matrix, to ensure the uniform of heat distribution Property simultaneously ensures to realize sufficiently high power output；
The section that high heat conduction is heat sink is trapezoidal, two groups of high heat conductions are heat sink both sides for being symmetrically distributed in Nd-doped yttrium vanadate crystal；Height is led The base area that heat is heat sink is more than top surface area；The top surface that high heat conduction is heat sink is welded on the table of Nd-doped yttrium vanadate crystal with indium metal Face；
Electronics borneol is pasted by thermal conductive silicon in the heat sink bottom surface of high heat conduction；The outside of electronics borneol is equipped with heat-conducting copper pipe, each Heat-conducting copper pipe is laid side by side, the pedestal and cage connection of heat-conducting copper pipe and laser；
The heat of Nd-doped yttrium vanadate crystal generation is achieved in by indium metal to top surface again to bottom surface, then via electronics borneol, lead Hot copper pipe is finally entered at the pedestal and shell of laser in working environment.
2. a kind of cooling system based on slab laser according to claim 1, it is characterised in that：Nd-doped yttrium vanadate is brilliant Body is the operation material of slab laser, first using the form of double-end pumping, the heat that Nd-doped yttrium vanadate crystal is generated Homogenization Treatments are carried out, substantially reduces in Nd-doped yttrium vanadate crystal and generates thermal lensing effect；The heat that Nd-doped yttrium vanadate crystal generates Amount ensures that the heat of output is quickly led by high heat conduction is heat sink, the progress of electronics borneol reasonably, uniaxially, is effectively conducted Go out, greatly improve the working efficiency of Nd-doped yttrium vanadate crystal and laser beam output quality.
3. a kind of cooling system based on slab laser according to claim 1, it is characterised in that：Using electronics borneol The small-volume large-power semiconductor laser of cooling system heat dissipation, including Nd：YVO4Crystal, microscope group, high heat conduction are heat sink and partly lead A heat-conducting pad is respectively put preferably to transmit heat and fixation in two side pumping of chiller, upper and lower both sides；Again in heat-conducting pad It is heat sink that opposite side places truncated rectangular pyramids shape high heat conduction；With heat sink opposite side apply one layer of very thin thermal conductive silicon, then with electronics borneol knot It closes, is most followed by heat-dissipating pipe.
CN201810137982.7A 2018-02-10 2018-02-10 A kind of cooling system based on slab laser Pending CN108233156A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810137982.7A CN108233156A (en) 2018-02-10 2018-02-10 A kind of cooling system based on slab laser

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Application Number Priority Date Filing Date Title
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112490828A (en) * 2020-11-30 2021-03-12 北京超快光子科技有限公司 Laser crystal integrated module
CN115864109A (en) * 2023-01-19 2023-03-28 安徽华创鸿度光电科技有限公司 Solid laser crystal heat sink method without water cooling heat dissipation

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101071932A (en) * 2007-05-22 2007-11-14 南昌航空大学 Semiconductor laser precision tune-up and tempeature control device
CN101364705A (en) * 2007-08-08 2009-02-11 中国科学院半导体研究所 Diode laser pump head
CN101562309A (en) * 2009-04-02 2009-10-21 北京国科世纪激光技术有限公司 Laser gain module of semiconductor laser monotube combined side pumped solid-state laser
CN102136668A (en) * 2011-03-06 2011-07-27 四川大学 Temperature control method of laser medium of disk laser and device thereof
CN204760737U (en) * 2015-03-28 2015-11-11 武汉新特光电技术有限公司 Forced air cooling ultraviolet laser

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101071932A (en) * 2007-05-22 2007-11-14 南昌航空大学 Semiconductor laser precision tune-up and tempeature control device
CN101364705A (en) * 2007-08-08 2009-02-11 中国科学院半导体研究所 Diode laser pump head
CN101562309A (en) * 2009-04-02 2009-10-21 北京国科世纪激光技术有限公司 Laser gain module of semiconductor laser monotube combined side pumped solid-state laser
CN102136668A (en) * 2011-03-06 2011-07-27 四川大学 Temperature control method of laser medium of disk laser and device thereof
CN204760737U (en) * 2015-03-28 2015-11-11 武汉新特光电技术有限公司 Forced air cooling ultraviolet laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112490828A (en) * 2020-11-30 2021-03-12 北京超快光子科技有限公司 Laser crystal integrated module
CN115864109A (en) * 2023-01-19 2023-03-28 安徽华创鸿度光电科技有限公司 Solid laser crystal heat sink method without water cooling heat dissipation

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Application publication date: 20180629