CN115863275A - Ceramic substrate containing heat dissipation copper pipe and preparation method thereof - Google Patents

Ceramic substrate containing heat dissipation copper pipe and preparation method thereof Download PDF

Info

Publication number
CN115863275A
CN115863275A CN202211583545.0A CN202211583545A CN115863275A CN 115863275 A CN115863275 A CN 115863275A CN 202211583545 A CN202211583545 A CN 202211583545A CN 115863275 A CN115863275 A CN 115863275A
Authority
CN
China
Prior art keywords
ceramic substrate
copper
layer
heat dissipation
copper pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211583545.0A
Other languages
Chinese (zh)
Inventor
刘松坡
刘学昌
张树强
黄卫军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan Lizhida Technology Co ltd
Original Assignee
Wuhan Lizhida Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan Lizhida Technology Co ltd filed Critical Wuhan Lizhida Technology Co ltd
Priority to CN202211583545.0A priority Critical patent/CN115863275A/en
Publication of CN115863275A publication Critical patent/CN115863275A/en
Pending legal-status Critical Current

Links

Images

Abstract

The invention belongs to the technical field related to electronic packaging, and provides a ceramic substrate containing a heat dissipation copper pipe and a preparation method thereof. The ceramic substrate comprises a ceramic substrate, wherein the upper surface of the ceramic substrate is a metal circuit layer, and the lower surface of the ceramic substrate is provided with an electroplated copper layer and a heat dissipation copper pipe. The ceramic substrate containing the heat dissipation copper pipe and the preparation method thereof have the advantages of compact structure, strong heat dissipation capability, simple preparation process, high production efficiency and the like.

Description

Ceramic substrate containing heat dissipation copper pipe and preparation method thereof
Technical Field
The invention belongs to the technical field related to electronic packaging, and particularly relates to a ceramic substrate containing a heat dissipation copper pipe and a preparation method thereof.
Background
With the continuous progress of electronic design and manufacturing process, the multifunction and miniaturization of electronic products, power devices are continuously developed, so that the power consumption of a unit chip is rapidly increased, the heat flow of a unit volume is increased, and the temperature of the chip is rapidly increased. The chip is affected by temperature, the service life is reduced, and meanwhile, the chip may be deformed due to local overheating temperature, so that heat dissipation becomes a key technology which affects the performance and reliability of the device.
The ceramic material has the properties of high thermal conductivity, good heat resistance, high insulation, high strength, thermal matching with a chip material and the like, so the ceramic material is very suitable for serving as a power device packaging substrate and is widely applied to the fields of semiconductor illumination, laser and optical communication, aerospace, automotive electronics, deep sea drilling and the like. Currently, with the increase of chip power and the improvement of device integration level, the existing ceramic substrate is difficult to meet the heat dissipation requirement, and an active heat dissipation technology containing a micro-channel structure must be adopted. In recent years, micro-channel heat dissipation technology based on semiconductor processing technology is applied to heat dissipation of power devices, and a structure with a size of tens to hundreds of micrometers is processed on the bottom surface of a packaging substrate (such as a silicon substrate, a metal substrate and the like) by adopting the processes of photoetching, developing, corrosion and the like in the semiconductor technology, and then a micro-channel is prepared by sealing a bottom plate and a microstructure through a welding or bonding process. When the device works, liquid flows in the micro-channel, and the high-efficiency heat dissipation characteristic of the flowing micro-fluid is utilized to realize cooling. However, the existing micro flow channels are prepared by micro-processing technology (photoetching, developing, corrosion, etc.), the production efficiency is low, and the technical difficulty is great for the special-shaped micro flow channel structure. Therefore, it is highly desirable to provide a method for preparing a micro flow channel, which has a simple preparation process and high production efficiency and can realize the preparation of a special-shaped micro flow channel structure.
Disclosure of Invention
Aiming at the defects or improvement requirements of the prior art, the invention provides a ceramic substrate containing a heat dissipation copper pipe, which comprises a ceramic substrate, wherein the upper surface of the ceramic substrate is a metal circuit layer, the lower surface of the ceramic substrate is an electroplated copper layer and a copper pipe, and the copper pipe is embedded into the electroplated copper layer on the lower surface of the ceramic substrate by adopting an electroplating bonding process. The micro-channel is simple in preparation process and high in production efficiency, and the ceramic substrate is strong in heat dissipation capacity as the built-in copper tube is used as the micro-channel.
In order to achieve the above object, according to one aspect of the present invention, there is provided a ceramic substrate including a ceramic substrate, wherein a metal wiring layer is formed on an upper surface of the ceramic substrate, an electroplated copper layer is formed on a lower surface of the ceramic substrate, a copper pipe is embedded in the electroplated copper layer, and the copper pipe is embedded with the electroplated copper layer on the lower surface of the ceramic substrate by an electroplated bonding process.
Further, the ceramic substrate material is aluminum oxide, aluminum nitride, silicon nitride or beryllium oxide.
According to another aspect of the invention, a method for preparing a ceramic substrate containing a heat dissipation copper tube is provided, which specifically comprises the following steps:
s1, manufacturing a metal circuit layer
S11, sputtering and depositing metal thin layers on the upper surface and the lower surface of the ceramic substrate to be used as seed layers;
s12, pasting a dry film on the upper surface of the ceramic substrate, and sequentially exposing and developing the dry film to form a circuit layer pattern;
and S13, manufacturing a metal circuit layer and an electroplated copper layer on the upper surface and the lower surface of the ceramic substrate by adopting a pattern electroplating process.
S2, copper pipe pretreatment: and (4) pickling the surface of the selected copper pipe to remove a surface oxide layer.
S3, embedding the copper pipe and the ceramic substrate: the copper pipe is horizontally arranged on the electroplated copper layer of the ceramic substrate, and the copper pipe is embedded into the electroplated copper layer by adopting an electroplating bonding process.
Furthermore, the outer diameter of the copper pipe is 1-3mm.
Further, the pickling of the surface of the copper pipe is carried out by using 1-10% of HCl solution or H 2 SO 4 And (4) dissolving to remove an oxide layer on the surface of the copper pipe and prevent infirm bonding.
Furthermore, the current density is 2-5 ASD and the electroplating solution is 60-120 during electroplating bondingg/LCuSO 4 +100-200g/LH 2 SO 4 (ii) a 7-10mg/L of accelerator, 150-200mg/L of inhibitor and 3-7mg/L of leveling agent so as to ensure that the electroplated layer is preferentially deposited at the contact part of the copper pipe and the ceramic substrate.
Furthermore, the thickness of the electroplating bonding copper layer is 25% -100% of the outer diameter of the copper pipe, so that the bonding strength and the heat dissipation capacity are guaranteed;
further, the copper tubes are arranged on the lower surface of the ceramic substrate at intervals in parallel or in a serpentine series, and the ratio of the spacing between the copper tubes to the diameter of the copper tubes is 1 to 5.
Generally, compared with the prior art, the ceramic substrate with the micro-channel and the preparation method thereof provided by the invention have the following beneficial effects:
1. the microchannel provided by the invention directly selects the copper tube, and is embedded into the electroplated copper layer through an electroplating bonding process, so that the structure is compact, and the integration level and the heat dissipation capability of the ceramic circuit board are improved.
2. By adopting the electroplating bonding process, the stress and the warpage of the ceramic substrate can be reduced, and the packaging efficiency and the packaging quality are improved.
Drawings
FIG. 1 is a schematic diagram of a ceramic substrate structure including a heat dissipating copper tube according to an embodiment of the present invention;
FIG. 2 is a schematic view of a heat dissipation copper pipe embedded in a copper-plated layer on a lower surface of a ceramic substrate according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of heat dissipation copper pipes arranged side by side according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of serpentine heat dissipation copper pipes connected in series according to an embodiment of the present invention;
fig. 5 is a flowchart of a process for manufacturing a ceramic substrate including a heat dissipation copper tube according to an embodiment of the present invention.
The same reference numbers will be used throughout the drawings to refer to the same or like elements or structures, wherein: 1-ceramic substrate, 2-metal circuit layer, 3-electroplated copper layer and 4-copper tube.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1
As shown in fig. 1-4, the present invention provides a ceramic substrate with a heat dissipation copper tube, the ceramic substrate includes a ceramic substrate 1, the upper surface of the ceramic substrate 1 is a metal circuit layer 2, the lower surface of the ceramic substrate 1 is provided with an electroplated copper layer 3 and a copper tube 4, and the copper tube 4 is embedded into the electroplated copper layer 3 on the bottom surface of the ceramic substrate 1 by electroplating bonding.
Further, the ceramic substrate 1 is made of aluminum oxide, aluminum nitride, silicon nitride or beryllium oxide;
further, the outer diameter of the copper pipe 4 is 1-3mm;
further, a metal seed layer is deposited on the lower surface of the ceramic substrate, and the electroplating copper layer (3) covers the metal seed layer through electroplating;
further, the copper pipes are arranged side by side at intervals on the lower surface of the ceramic substrate, and the ratio of the copper pipe spacing to the outer diameter is 1 to 5.
Example 2
As shown in fig. 5. The invention also provides a preparation method of the ceramic substrate containing the heat dissipation copper pipe, which comprises the following steps:
s1, manufacturing a metal circuit layer
S11, sputtering and depositing metal thin layers on the upper surface and the lower surface of the ceramic substrate to be used as seed layers;
s12, pasting a dry film on the upper surface of the ceramic substrate, and sequentially exposing and developing the dry film to form a circuit layer pattern;
and S13, respectively manufacturing a metal circuit layer and an electroplated copper layer on the upper surface and the lower surface of the ceramic substrate by adopting a pattern electroplating process.
S2, copper pipe pretreatment: and (4) pickling the surface of the selected copper pipe to remove a surface oxide layer.
S3, embedding the copper pipe and the ceramic substrate: the copper pipe is horizontally arranged on the electroplated copper layer of the ceramic substrate, and the copper pipe is embedded into the electroplated copper layer by adopting an electroplating bonding process.
Furthermore, the outer diameter of the copper pipe is 1-3mm.
Further, the pickling of the surface of the copper pipe is carried out by using 1-10% of HCl solution or H 2 SO 4 And (4) dissolving to remove an oxide layer on the surface of the copper pipe and prevent infirm bonding.
Electroplating is a process of plating a thin layer of other metals or alloys on the surface of some metals by using the principle of electrolysis, and is a process of plating a layer of metal film on the surface of a metal or other conductor materials by using the electrolysis effect to prevent the metal from being oxidized (such as corrosion), improve the wear resistance, conductivity, light reflection, corrosion resistance (such as copper sulfate and the like), improve the appearance and the like.
The electroplating requires a low-voltage large-current power supply for supplying power to the electroplating bath, and an electrolytic device is composed of electroplating solution, parts to be plated (cathode) and anode, wherein the components of the electroplating solution are different according to different coatings, but the electroplating solution contains main salt for providing metal ions, complexing agent capable of complexing the metal ions in the main salt to form a complex, buffering agent for stabilizing the pH value of the solution, anode activating agent and special additives (such as brightening agent, grain refining agent, leveling agent, wetting agent, stress relieving agent, fog inhibitor and the like). The electroplating process is a process that metal ions in the plating solution are reduced into metal atoms through electrode reaction under the action of an external electric field, and metal deposition is carried out on a cathode. Therefore, the method is a metal electrodeposition process comprising the steps of liquid phase mass transfer, electrochemical reaction, electric crystallization and the like.
Furthermore, the electroplating rate and the quality of an electroplating layer are considered, and the current density required by electroplating bonding is 2-5 ASD.
Further, the electroplating bonding solution is as follows: 60-120g/LCuSO 4 +100-200g/LH 2 SO 4 (ii) a 7-10mg/L of accelerator, 150-200mg/L of inhibitor and 3-7mg/L of leveling agent so as to ensure that the electroplated layer is preferentially deposited at the contact part of the copper pipe and the ceramic substrate.
Furthermore, the thickness of the electroplating bonding copper layer is 25% -100% of the outer diameter of the copper pipe, so that the bonding strength and the heat dissipation capacity are guaranteed;
further, the copper tubes are arranged in a spaced serpentine series on the lower surface of the ceramic substrate, and the ratio of the spacing between the copper tubes to the diameter is 1 to 5.
It will be readily understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention; any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. The utility model provides a ceramic substrate who contains heat dissipation copper pipe, this ceramic substrate includes the ceramic substrate, the ceramic substrate upper surface is the metal wiring layer, there are copper electroplating layer and heat dissipation copper pipe ceramic substrate lower surface, its characterized in that, the copper pipe that dispels the heat adopts the electroplating bonding technology to imbed in the copper electroplating layer.
2. A ceramic substrate comprising a copper heat sink tube according to claim 1, wherein: the ceramic substrate material is aluminum oxide, aluminum nitride, silicon nitride or beryllium oxide.
3. A ceramic substrate comprising a copper heat sink tube according to claim 1, wherein: the metal seed layer is deposited on the lower surface of the ceramic substrate, and the electroplated copper layer is prepared by covering the metal seed layer through electroplating.
4. A ceramic substrate comprising a copper heat sink tube according to claim 1, wherein: the outer diameter of the heat dissipation copper pipe is 1-3mm.
5. A ceramic substrate comprising a heat-dissipating copper tube as recited in claim 1, wherein: the heat dissipation copper pipes are arranged on the lower surface of the ceramic substrate at intervals in parallel or in a snake-shaped series connection mode, and the ratio of the spacing between the copper pipes to the diameter of the copper pipes is 1 to 5.
6. A method for preparing a ceramic substrate containing a heat dissipation copper pipe is characterized by comprising the following steps:
s1, manufacturing a metal circuit layer
S11, sputtering and depositing metal thin layers on the upper surface and the lower surface of the ceramic substrate to be used as seed layers;
s12, pasting a dry film on the upper surface of the ceramic substrate, and sequentially exposing and developing the dry film to form a circuit layer pattern;
s13, manufacturing a metal circuit layer and an electroplated copper layer on the upper surface and the lower surface of the ceramic substrate by adopting a pattern electroplating process;
s2, copper pipe pretreatment: pickling the surface of the selected copper pipe to remove a surface oxide layer;
s3, embedding the copper pipe and the ceramic substrate: the copper pipe is horizontally arranged on the electroplated copper layer of the ceramic substrate, and the copper pipe is embedded into the electroplated copper layer by adopting an electroplating bonding process.
7. The method of claim 6, wherein pickling the surface of the copper tube comprises 1-10% of HCl or H 2 SO 4 And (3) solution.
8. The method for preparing a ceramic substrate containing a heat dissipation copper tube as recited in claim 6, wherein the plating bonding solution is: 60-120g/LCuSO 4 +100-200g/LH 2 SO 4 (ii) a 7-10mg/L of accelerator, 150-200mg/L of inhibitor and 3-7mg/L of leveling agent.
9. The method according to claim 6, wherein the bonding current density of the electroplating is 2-5 ASD.
10. The method for preparing a ceramic substrate containing a heat dissipation copper tube as recited in claim 6, wherein the thickness of the electroplated bonding copper layer is 25% -100% of the outer diameter of the copper tube, so as to ensure the bonding strength and the heat dissipation capability.
CN202211583545.0A 2022-12-09 2022-12-09 Ceramic substrate containing heat dissipation copper pipe and preparation method thereof Pending CN115863275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211583545.0A CN115863275A (en) 2022-12-09 2022-12-09 Ceramic substrate containing heat dissipation copper pipe and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211583545.0A CN115863275A (en) 2022-12-09 2022-12-09 Ceramic substrate containing heat dissipation copper pipe and preparation method thereof

Publications (1)

Publication Number Publication Date
CN115863275A true CN115863275A (en) 2023-03-28

Family

ID=85671785

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211583545.0A Pending CN115863275A (en) 2022-12-09 2022-12-09 Ceramic substrate containing heat dissipation copper pipe and preparation method thereof

Country Status (1)

Country Link
CN (1) CN115863275A (en)

Similar Documents

Publication Publication Date Title
KR100420157B1 (en) Apparatus and method for electrolytically depositing a metal on a workpiece
US6210555B1 (en) Electrodeposition of metals in small recesses for manufacture of high density interconnects using reverse pulse plating
AU765242B2 (en) Electrodeposition of metals in small recesses using modulated electric fields
WO2017219797A1 (en) Electric copper plating liquid and electric copper plating process thereof
US20020038764A1 (en) Sequential electrodeposition of metals using modulated electric fields for manufacture of circuit boards having features of different sizes
TWI757927B (en) Single step electrolytic method of filling through holes in printed circuit boards and other substrates
Honma Plating technology for electronics packaging
CN100383959C (en) Electronic component and radiating member, and method of manufacturing semiconductor device using the component and member
TW201517335A (en) Thermal management circuit materials, method of manufacture thereof, and articles formed therefrom
CN105198491B (en) A kind of ceramic substrate preparation method containing conduction copper column
CN110331422B (en) Method for thickening electroplated copper layer of ceramic substrate
WO2003033776A1 (en) Electrodeposition of metals in high-aspect ratio cavities using modulated reverse electric fields.
CN207678068U (en) A kind of ultra-high conducting heat type ceramic substrate
CN105541417A (en) Production method for cladding copper on surface of aluminum nitride ceramic
CN115863275A (en) Ceramic substrate containing heat dissipation copper pipe and preparation method thereof
CN111696956B (en) Porous Cu on Cu surface for semiconductor packages
US20030188975A1 (en) Copper anode for semiconductor interconnects
CN109576766B (en) Preparation of nano TiO by electrophoresis-electrodeposition2Method for enhancing Sn-based micro-bumps
US10892206B2 (en) Methods of forming power electronic assemblies using metal inverse opal structures and encapsulated-polymer spheres
KR100803004B1 (en) Method for filling through hole
Kim et al. Maskless Electroplating Patterning Process using Selective Electrochemical Additive Manufacturing Method for Forming of Cu Pillar Bump, Spacer and Ag Plating on Ceramic Substrate
Christie Electroplating in the Electronics Industry
CN116283361B (en) DPA ceramic circuit board and manufacturing method thereof
TWI834143B (en) Acid copper electroplating solution
JP2000017480A (en) Plating method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination