CN115842249A - Broadband wave absorbing structure based on multilayer resistive film and preparation method - Google Patents
Broadband wave absorbing structure based on multilayer resistive film and preparation method Download PDFInfo
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- CN115842249A CN115842249A CN202211510392.7A CN202211510392A CN115842249A CN 115842249 A CN115842249 A CN 115842249A CN 202211510392 A CN202211510392 A CN 202211510392A CN 115842249 A CN115842249 A CN 115842249A
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Abstract
The invention relates to a broadband wave-absorbing structure based on a multilayer resistive film and a preparation method thereof, wherein the structure comprises a metal layer at the bottom, a spacing support layer and a resistive film layer are sequentially arranged on the metal layer in a crossed and laminated manner, the resistive film layer at the uppermost layer comprises a cross structure and a square ring structure with a hollow middle part, and the rest resistive film layers are square sheet structures; the thickness of the spacing support layer is 5-9mm, and the square resistance of the resistance film layer is 162-343Ohm/sq. The wave-absorbing structure has excellent low-frequency wave-absorbing performance, the reflection loss is less than-15 dB within 1.5GHz to 2.4GHz, and the reflection loss can be kept less than-12.5 dB within 1.4GHz to 18.6GHz.
Description
Technical Field
The invention belongs to the technical field of functional materials, and particularly relates to a broadband wave-absorbing structure based on a multilayer resistive film and a preparation method thereof.
Background
Due to the continuous development of radar detection technology and the capability of reducing radar scattering cross section (RCS) through shape design, the radar wave absorbing material provides a parallel anti-detection way, and can absorb electromagnetic energy emitted by enemy radars, so that the detection probability is reduced. The traditional wave-absorbing material has the advantages of simple process, convenient construction and the like, but also has the defects of thick thickness, heavy weight, narrow absorption band width and the like.
CN114597672A discloses a multilayer resistance type FSS broadband wave-absorbing structure, which adopts the synergistic effect of multilayer resistance films, widens the wave-absorbing bandwidth under low thickness and enhances the low-frequency wave-absorbing performance. The wave absorbing performance of the multilayer wave absorbing structure at low frequency can only cover S wave band, the wave absorbing performance of L wave band is obviously reduced, the minimum of line width and line distance of a resistance film of a bending line structure adopted by the multilayer wave absorbing structure is 0.4mm, the whole area is covered, and the manufacturing error rate of the resistance film is high.
Disclosure of Invention
The invention provides a broadband wave-absorbing structure based on a multilayer resistive film and a preparation method thereof.
The technical scheme of the invention is that the broadband wave-absorbing structure based on the multilayer resistive film comprises a metal layer at the bottom, wherein interval supporting layers and resistive film layers are sequentially arranged on the metal layer in a crossed and laminated mode, the resistive film layers are at least 4, the uppermost resistive film layer comprises a cross-shaped structure and a square ring structure with a hollow middle part, and the rest resistive film layers are square sheet structures; the thickness of the spacing support layer is 5-9 mm, and the sheet resistance of the resistance film layer is 162-343 Ohm/sq.
Furthermore, the cross-shaped structure is formed by four T-shaped units which are arranged clockwise, the bottoms of the T-shaped units are connected, and the included angle between every two adjacent T-shaped units is 90 degrees; the total length of the cross-shaped structure is 9.4mm, the length of the short side of the T-shaped unit is 3.3mm, and the widths of the short side and the long side are 0.87mm.
Further, the outer side length of the square ring structure is 9.5mm, and the ring wall width is 1.4mm.
Furthermore, the resistance film layer is made of one or more of graphene, carbon nanotubes, a high-molecular conductive material, graphite and carbon black.
Furthermore, 4 resistance film layers are arranged on the metal layer, other resistance film layers between the metal layer and the resistance film layer on the uppermost layer are of a rectangular structure, each rectangular structure is composed of two square structures, the side length of each square structure is 7.4-9.8 mm, a gap is reserved between each two square structures, and the width of the gap is 0.2-2.6 mm.
Further, the sheet resistance of the 4 resistance film layers is Rs 1 、Rs 2 、Rs 3 And Rs 4 Wherein Rs 3 ＞Rs 4 ＞Rs 2 ＞Rs 1 。
Further, the spacing support layer is made of PVC foam, PMI foam or honeycomb material, and the relative dielectric constant epsilon satisfies: epsilon is more than or equal to 1.0 and less than or equal to 1.5.
The invention also relates to a preparation method of the structure, which comprises the following steps:
1) Printing resistance film layer slurry on a polyimide film by adopting a screen printing mode according to the shape and size requirements of different resistance film layers, and gluing each layer of resistance film and each spacing support layer into a whole to form a plurality of groups of units for combining the spacing support layers and the resistance film layers;
2) And placing all the units on the metal layer according to a design sequence, and gluing the units into a whole by using a foaming adhesive to obtain the broadband wave-absorbing structure based on the multilayer resistive film.
The invention has the beneficial effects that:
(1) The wave-absorbing structure provided by the invention introduces two structures into the repeating unit structure of the resistive film on the uppermost layer, wherein the cross-shaped structure plays a role in enhancing the wave-absorbing performance, the square ring structure plays a role in widening the absorption bandwidth of the wave-absorbing performance, and the two structures can generate a synergistic effect to enhance the wave-absorbing performance and widen the wave-absorbing bandwidth.
(2) The wave-absorbing structure is provided with a plurality of layers of resistive films, the resistive films are different in shape and size, the first layer of resistive film mainly plays a role in improving the wave-absorbing performance of C and Ku wave bands, the second resistive film mainly plays a role in improving the wave-absorbing performance of C, X and Ku wave bands, the third layer mainly plays a role in improving the wave-absorbing performance of L, S and C wave bands, the fourth layer mainly plays a role in improving the wave-absorbing performance of C and Ku wave bands, and the wave-absorbing structure has excellent wave-absorbing performance in L-Ku wave bands through the combined synergistic effect of the four layers of resistive films.
(3) The wave-absorbing structure provided by the invention has excellent low-frequency wave-absorbing performance, the reflection loss is less than-15 dB within 1.5 GHz-2.4 GHz, and the reflection loss can be kept less than-12.5 dB within 1.4 GHz-18.6 GHz. The wave-absorbing structure provided by the invention widens the wave-absorbing frequency band to L, S and C wave band through the synergistic effect of the four layers of the resistance films.
(4) The minimum line distance of each layer of the wave-absorbing structure provided by the invention is 0.4mm, the wave-absorbing structure is only arranged between the cross shape and the square ring, and a large area does not exist in the repeating unit, so that the error rate of manufacturing the resistive film caused by too small line width and line distance is avoided.
Drawings
Fig. 1 is a schematic structural diagram of a wave-absorbing structure in embodiment 1 of the present invention.
Figure 2 is a side view of the absorbent structure of example 1.
Fig. 3 is a schematic diagram of the structure of the uppermost resistive film in embodiment 1.
Fig. 4 is a schematic structural diagram of an intermediate resistance film layer in embodiment 1.
Fig. 5 is a reflection curve of the wave-absorbing structure under normal incidence in example 1.
Fig. 6 is a reflection curve of the wave-absorbing structure under normal incidence in example 2.
Fig. 7 is a reflection curve of the wave-absorbing structure under normal incidence in example 3.
FIG. 8 is a reflection curve of the wave-absorbing structure under normal incidence in example 4.
FIG. 9 is a reflection curve of the wave-absorbing structure under normal incidence in example 5.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to examples, but those skilled in the art will appreciate that the following examples are only illustrative of the present invention and should not be construed as limiting the scope of the present invention.
Example 1:
examples 1 to 1
As shown in fig. 1, the present invention provides a broadband wave absorbing structure based on a multilayer resistive film, which includes a bottom metal layer made of aluminum alloy 7075 with a thickness of 1.0mm, and 4 resistive film layers and a first resistive film layer, a second resistive film layer, a third resistive film layer, a fourth resistive film layer, and a fourth resistive film layer are sequentially stacked on the metal layer from top to bottom.
As shown in fig. 2, the first resistive film spacer support layer, the second resistive film spacer support layer, the third resistive film spacer support layer, and the fourth resistive film spacer support layer have thicknesses H1 of 5.70mm, H2 of 6.30mm, H3 of 8.00mm, and H4 of 6.00mm. The resistance film spacing support material can be PVC foam, PMI foam or honeycomb material, and the relative dielectric constant epsilon of the material satisfies the following conditions: epsilon is more than or equal to 1.0 and less than or equal to 1.5; this embodiment is specifically PMI foam.
The first resistive film layer includes a cross-shaped structure and a hollow square ring structure in the middle, and is configured as shown in fig. 3, in which the dimensions are shown in table 1 below.
TABLE 1
| Size symbol | Size value/mm |
| L_1 | 8.00 |
| L_2 | 3.30 |
| L_3 | 9.50 |
| W1 | 0.87 |
| W2 | 1.40 |
The repeating unit structures of the second, third and fourth layers of resistive films are all square sheet structures, as shown in fig. 4, and the sizes are as shown in the following table 2, and the low-frequency wave-absorbing performance is enhanced through the synergistic effect of frequency division of the multiple layers of resistive films.
TABLE 2
The sheet resistance Rs of each resistance film layer is shown in table 3.
TABLE 3
| Name (R) | Square resistance/(Ohm/sq) |
| First layer resistance film | 162.00 |
| Second layer resistive film | 208.00 |
| Third layer resistance film | 343.00 |
| Fourth layer resistance film | 242.00 |
The material of the resistance film can be one or a complex of more of graphene, carbon nanotubes, a high-molecular conductive material, graphite and carbon black. In this embodiment, the material is carbon black.
The preparation method of the structure comprises the following steps:
1) Printing resistance film layer slurry on different spacing support layers according to the shape and size requirements of different resistance film layers by adopting a screen printing mode to form a plurality of groups of units combining the spacing support layers and the resistance film layers;
2) And placing all the units on the metal layer according to a design sequence, and gluing the units into a whole by using a foaming adhesive to obtain the broadband wave-absorbing structure based on the multilayer resistive film.
The reflection curve of the broadband wave-absorbing structure based on the multilayer resistive film under TE and TM polarization in the frequency band of 0.5 GHz-20 GHz under the condition of vertical incidence is shown in FIG. 5. As can be seen from the figure, the effective wave-absorbing bandwidth of the wave-absorbing structure is 1.3 GHz-19.2 GHz by taking-10 dB as a standard, the reflection loss is less than-15 dB within 1.5 GHz-2.4 GHz of low frequency, and the reflection loss can be kept less than-12.5 dB within 1.4 GHz-18.6 GHz.
Examples 1 to 2:
the broadband wave-absorbing structure based on the multilayer resistive film in the embodiment is the same as that in the embodiment 1-1, except that the first resistive film is formed by two symmetrically arranged cross-shaped structures, and the shape and the size of the first resistive film are the same as those in the embodiment 1-1.
Examples 1 to 3:
the broadband wave-absorbing structure based on the multilayer resistive film in this embodiment is the same as that in embodiment 1-1, except that the first resistive film is formed by two symmetrically arranged square ring structures, and the shape and size of the first resistive film are the same as those in embodiment 1-1.
Examples 1 to 4:
the broadband wave-absorbing structure based on the multilayer resistive film in this embodiment is the same as that in embodiment 1-1, except that the first resistive film is composed of two symmetrically arranged square-sheet structures, the side length of the first resistive film is 9.5mm, and the gap between the two square-sheet structures is 1.0mm.
Examples 1 to 5:
the broadband wave absorbing structure based on the multilayer resistive film in the embodiment is the same as that in the embodiment 1-1, and the difference is that the size between the third resistive film layer and the fourth resistive film layer is exchanged.
The reflectivity of the broadband wave-absorbing structure based on the multilayer resistive film in the embodiment is tested, and the reference standard is GJB 2038A. The reflection curves of the structures of examples 1-1 to 1-5 at normal incidence are shown in fig. 5 to 9, respectively.
Wherein the reflection curve of the example 1-1 under the condition of normal incidence under TE and TM polarization in the frequency band of 0.5 GHz-20 GHz is shown in FIG. 5. As can be seen from FIG. 5, the effective wave-absorbing bandwidth of the wave-absorbing structure is 1.3 GHz-19.2 GHz based on-10 dB, the reflection loss is less than-15 dB within 1.5 GHz-2.4 GHz of low frequency, and the reflection loss can be kept less than-12.5 dB within 1.4 GHz-18.6 GHz.
Wherein the reflection curve of example 1-2 under TE and TM polarization in the frequency band of 0.5 GHz-20 GHz at normal incidence is shown in FIG. 6. As can be seen from FIG. 6, the effective wave-absorbing bandwidth of the wave-absorbing structure is 1.4 GHz-18.7 GHz based on-10 dB, the reflection loss is less than-15 dB within 1.7 GHz-2.5 GHz of low frequency, and the reflection loss can be kept less than-12.5 dB within 1.5 GHz-18.0 GHz.
Wherein the reflection curves of the examples 1-3 under the condition of normal incidence and TE and TM polarization in the frequency band of 0.5 GHz-20 GHz are shown in figure 7. As can be seen from FIG. 7, the effective wave-absorbing bandwidth of the wave-absorbing structure is 1.2 GHz-19.6 GHz based on-10 dB, the reflection loss is less than-15 dB within 1.3 GHz-2.1 GHz of low frequency, and the reflection loss can be kept less than-11.0 dB within 1.3 GHz-19.4 GHz.
Wherein the reflection curves of the examples 1-4 under the condition of normal incidence and TE and TM polarization in the frequency band of 0.5 GHz-20 GHz are shown in FIG. 8. As can be seen from FIG. 8, the effective wave-absorbing bandwidth of the wave-absorbing structure is 1.1 GHz-2.0 GHz based on-10 dB.
Wherein the reflection curves of the examples 1-5 under the normal incidence and TE and TM polarization in the frequency band of 0.5 GHz-20 GHz are shown in FIG. 9. As can be seen from FIG. 9, the effective wave-absorbing bandwidth of the wave-absorbing structure is 1.4 GHz-2.6 GHz and 4.3 GHz-17.5 GHz based on-10 dB.
Claims (8)
1. A broadband wave-absorbing structure based on a multilayer resistive film is characterized by comprising a metal layer at the bottom, wherein interval supporting layers and resistive film layers are sequentially arranged on the metal layer in a crossed and laminated mode, the resistive film layers are at least 4, the resistive film layer at the uppermost layer comprises a cross-shaped structure and a square ring structure with a hollow middle part, and the rest resistive film layers are square sheet structures; the thickness of the spacing support layer is 5-9mm, and the square resistance of the resistance film layer is 162-343Ohm/sq.
2. The structure of claim 1, wherein: the cross structure is formed by four T-shaped units which are arranged clockwise, the bottoms of the T-shaped units are connected, and the included angle between every two adjacent T-shaped units is 90 degrees; the total length of the cross-shaped structure is 9.4mm, the length of the short side of the T-shaped unit is 3.3mm, and the widths of the short side and the long side are both 0.87mm.
3. The structure of claim 1, wherein: the external side length of the square ring structure is 9.5mm, and the width of the ring wall is 1.4mm.
4. The structure of claim 1, wherein: the resistance film layer is made of one or more of graphene, carbon nano tubes, high-molecular conductive materials, graphite and carbon black.
5. The structure of claim 1, wherein: the metal layer is provided with 4 resistance film layers, other resistance film layers between the metal layer and the resistance film layer on the uppermost layer are in a rectangular structure, each rectangular structure is composed of two square structures, the side length of each square structure is 7.4-9.8 mm, a gap is reserved between the two square structures, and the width of the gap is 0.2-2.6 mm.
6. The structure of claim 5, wherein: the sheet resistance of the 4 resistance film layers is Rs 1 、Rs 2 、Rs 3 And Rs 4 Wherein Rs 3 ＞Rs 4 ＞Rs 2 ＞Rs 1 。
7. The structure of claim 1, wherein: the spacing supporting layer is made of PVC foam, PMI foam or honeycomb material, and the relative dielectric constant epsilon satisfies: epsilon is more than or equal to 1.0 and less than or equal to 1.5.
8. The method of making the structure of any of claims 1~7 comprising the steps of:
1) Printing resistance film layer slurry on a polyimide film by adopting a screen printing mode according to the shape and size requirements of different resistance film layers, and gluing each layer of resistance film and each spacing support layer into a whole to form a plurality of groups of units formed by combining the spacing support layers and the resistance film layers;
2) And placing all the units on the metal layer according to a design sequence, and gluing the units into a whole by using a foaming adhesive to obtain the broadband wave-absorbing structure based on the multilayer resistive film.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116387849A (en) * | 2023-06-05 | 2023-07-04 | 四川九洲电器集团有限责任公司 | Wave absorber periodic unit and ultra-wideband wave absorber based on resistance surface |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116387849A (en) * | 2023-06-05 | 2023-07-04 | 四川九洲电器集团有限责任公司 | Wave absorber periodic unit and ultra-wideband wave absorber based on resistance surface |
| CN116387849B (en) * | 2023-06-05 | 2023-08-04 | 四川九洲电器集团有限责任公司 | Wave absorber periodic unit and ultra-wideband wave absorber based on resistance surface |
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