CN107257033A - The multiband wave absorbing device realized based on high impedance surface - Google Patents
The multiband wave absorbing device realized based on high impedance surface Download PDFInfo
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- CN107257033A CN107257033A CN201710584622.7A CN201710584622A CN107257033A CN 107257033 A CN107257033 A CN 107257033A CN 201710584622 A CN201710584622 A CN 201710584622A CN 107257033 A CN107257033 A CN 107257033A
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- high impedance
- absorbing device
- wave absorbing
- impedance surface
- metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
Abstract
The invention provides a kind of multiband wave absorbing device realized based on high impedance surface.Wave absorbing device uses five-layer structure, three layers of composition high impedance surface below the wave absorbing device, the high impedance surface includes medium substrate (1) and is close to the metallic plate (2) of medium substrate (1) lower surface, also include the period surface metal pattern (3) positioned at medium substrate (1) upper surface, the surface metal pattern (3) is to crack to obtain on square metal.The wave absorbing device upper two layers include being located at the buffer layer (4) above high impedance surface and the resistance film (5) positioned at buffer layer (4) upper surface.The wave absorbing device of the present invention uses high impedance surface structure, multiple characteristic frequencies are obtained by being cracked on the cycle metal pattern of high impedance surface, the characteristic frequency of high impedance surface can be adjusted by the positions and dimensions for changing seam, so as to realize the regulation to wave absorbing device frequency range.
Description
Technical field
The present invention relates to a kind of multiband wave absorbing device realized based on high impedance surface, belong to the design of Meta Materials wave absorbing device
Technical field.
Background technology
High impedance surface is a kind of electromagnetic bandgap structure, has high surface impedance in certain frequency band, can make
Incident electromagnetic wave almost reflects in the same direction, and this characteristic is approximate with perfect magnetic conductor.In high impedance surface plus one layer 377 ohm
Resistive film, then can realize the suction ripple at characteristic frequency.High impedance surface has reflection and surface wave rejection characteristic in the same direction, in ripple
Lead, antenna and RCS reduction in terms of be widely used.
At this stage mostly by the structure group battle array of different size identical patterns into composite construction to realize multiband, but use this
Unit size after the mode of kind, group battle array is often larger.So want to realize that multifrequency inhales ripple and unit size is small, thickness of thin, be compared with
Difficult.
The content of the invention
Technical problem：The technical problem to be solved in the present invention is to provide a kind of multiband suction realized based on high impedance surface
Ripple device, realizes the multiple characteristic frequencies of high impedance surface to realize that multifrequency inhales ripple on the premise of thickness of thin unit size is small.Mainly
Target is the wave absorbing device for realizing that thickness of thin, multiband, polarization are insensitive.
Technical scheme：The present invention is a kind of multiband wave absorbing device realized based on high impedance surface, and the wave absorbing device uses five
Three layers of composition high impedance surface below Rotating fields, the wave absorbing device, the high impedance surface includes medium substrate and is close to Jie
The metallic plate of matter base lower surface, in addition to the period surface metal structure positioned at medium substrate upper surface；In the wave absorbing device
Two layers of face includes being located at the buffer layer above high impedance surface and the resistance film positioned at buffer layer upper surface.
Wherein：
The surface metal structure is to crack to obtain on square metal, passes through the cycle metal in the high impedance surface
Cracked in structure and obtain multiple characteristic frequencies, the characteristic frequency of high impedance surface can entered by the positions and dimensions for changing seam
Row regulation, so as to realize the regulation to wave absorbing device frequency range.
The surface metal structure is to crack to obtain on square metal, and seam is shaped as Jerusalem cross structure.
The surface metal pattern is to crack to obtain on square metal, and seam is shaped as four long square bars, described four
The seam size of individual long square bar is identical, and position is full symmetric, each stitches parallel with four sides of square metal.
Described medium substrate material therefor is FR4, and underlying metal plate and surface period metal structure are all copper foil, thickness
For 0.02 ± 0.005mm, buffer layer is foam, and resistance film is the resistive film of 377 sheet resistances.
The absorptivity calculation formula of the wave absorbing device is A (ω)=1-R (ω), wherein, R (ω) is wave absorbing device input reflection system
Square of several modulus value, ω is frequency.
Beneficial effect：
1st, the wave absorbing device that multiband wave-absorbing effect is realized based on high impedance surface of the invention, is innovatively proposed in high resistant
Cracked on the square metal of resistance to surface, to realize multiple characteristic frequencies.
2nd, the wave absorbing device that of the invention two is realized based on high impedance surface, except that can realize that multiband inhales ripple, is also realized
Inhale ripple in the broadband of X-band and Ku frequency bands.
3rd, two wave absorbing device thickness of thin of the invention, and unit size is small.
4th, two wave absorbing device material therefor of the invention is conventional material, is easier to realize.
Brief description of the drawings
Fig. 1 for the present invention in based on high impedance surface realize multiband wave-absorbing effect wave absorbing device overall structure signal
Figure,
Fig. 2 is out the square period surface metal pattern schematic diagram of Jerusalem shape seam,
Fig. 3 is the input impedance imaginary part figure of high impedance surface in embodiment 1,
Fig. 4 is the suction ripple rate figure of embodiment 1,
Fig. 5 is out the square period surface metal pattern schematic diagram of four long square bar seam,
Fig. 6 is the input impedance imaginary part figure of high impedance surface in embodiment 2,
Fig. 7 is the suction ripple rate figure of embodiment 2.
Have in figure：Medium substrate 1, metallic plate 2, cycle metal structure 3, buffer layer 4, resistance film 5.
Embodiment
A kind of wave absorbing device that multiband wave-absorbing effect is realized based on high impedance surface of the present invention, wave absorbing device is using five layers of knot
Three layers of composition high impedance surface below structure, the wave absorbing device, the high impedance surface includes medium substrate 1 and is close to medium base
The metallic plate 2 of the lower surface of plate 1, in addition to the period surface metal structure 3 positioned at the upper surface of medium substrate 1, the surface metal
Pattern 3 is to crack to obtain on square metal.High impedance surface during the square pattern periodic arrangement has optimal feature
Bandwidth, so cracked on square metal surface to realize multiband, can be to high impedance table by the positions and dimensions for changing seam
The characteristic frequency in face is adjusted, so as to realize the regulation to wave absorbing device frequency range.
The wave absorbing device upper two layers are including the buffer layer 4 above high impedance surface and positioned at buffer layer
The resistance film 5 of 4 upper surfaces, buffer layer 4 is foam, and resistance film 5 is the resistive film of 377 sheet resistances.High impedance surface exists
Impedance is larger at characteristic frequency, and the sheet resistance film 5 of 377 sheet resistances causes equiva lent impedance of the wave absorbing device at characteristic frequency and oneself
By spatial match, so as to realize wave-absorbing effect.
Preferably, by the difference of the pattern of seam, two different high impedance surface is devised, a seam is shaped as
Spread cold cross structure in road.A is four long square bars, and the seam size of four long square bars is identical, and position is full symmetric,
Each stitch parallel with four sides of square metal.
Preferably, the used medium material of medium substrate 1 is FR4, underlying metal plate 2 and surface period metal structure 3
All it is copper, thickness is 0.02mm, and the absorptivity calculation formula of wave absorbing device is generally：A (ω)=1-R (ω)-T (ω), here because
It is metallic plate 2 for bottom, is then passed through without ripple, transmissivity is zero, the suction ripple rate calculation formula in the present invention is A (ω)=1-R
(ω)。
As shown in figure 1, the present invention realizes the wave absorbing device of multiband wave-absorbing effect based on high impedance surface, wave absorbing device uses five
Three layers of composition high impedance surface below Rotating fields, the wave absorbing device, the high impedance surface includes medium substrate 1 and is close to Jie
The metallic plate 2 of the lower surface of matter substrate 1, in addition to the period surface metal structure 3 positioned at the upper surface of medium substrate 1, the surface
Metal structure 3 is to crack to obtain on square metal, and the high impedance surface of the square pattern has optimal feature bandwidth, institute
, can be to the feature of high impedance surface by the positions and dimensions for changing seam to be cracked on square metal surface to realize multiband
Frequency is adjusted, so as to realize the regulation to wave absorbing device frequency range.
The wave absorbing device upper two layers are including the buffer layer 4 above high impedance surface and positioned at buffer layer
The resistance film 5 of 4 upper surfaces, the material therefor of buffer layer 4 is foam, and resistance film 5 is the resistive film of 377 sheet resistances.High resistant
Resistance to surface impedance at characteristic frequency is larger, and the sheet resistance film 5 of 377 sheet resistances make it that wave absorbing device is equivalent at characteristic frequency
Impedance is matched with free space, so as to realize wave-absorbing effect.
By the difference of the pattern of seam, two different high impedance surface is devised.As shown in Fig. 2 the shape of a seam
For Jerusalem cross structure.As shown in figure 5, a is four long square bars, the seam size of four long square bars is identical,
Position is full symmetric, each stitches parallel with four sides of square metal.
Preferably, the used medium material of medium substrate 1 is FR4, underlying metal plate 2 and surface period metal structure 3
All it is copper, thickness is 0.02mm, and the absorptivity calculation formula of wave absorbing device is generally：A (ω)=1-R (ω)-T (ω), here because
It is metallic plate 2 for bottom, is then passed through without ripple, transmissivity is zero, the suction ripple rate calculation formula in the present invention is A (ω)=1-R
(ω)。
Illustrated below according to encompassed content.
Embodiment 1：
It is a kind of to realize that the wave absorbing device of multiband wave-absorbing effect uses five-layer structure based on high impedance surface, as shown in Figure 1.Open
The cellular construction of high impedance surface after seam is as shown in Fig. 2 the medium substrate material therefor of high impedance surface is FR4, and thickness is
1.2mm, unit size is 16mm*16mm.Underlying metal plate and surface period metal structure are all copper, and thickness is 0.02mm.Table
Face cycle metal pattern square metal length of side 15.5mm, the position cracked is full symmetric, two pairs of length of sides of Jerusalem shape seam
Square outer edges are at a distance of 13mm, a length of 8mm of outside rectangle, and slit width is 0.5mm.Used in buffer layer above high impedance surface
Material is foam, and it is resistance film above 6mm, buffer layer that thickness, which is, and sheet resistance is 377 sheet resistances.
Realize that the wave absorbing device of multiband wave-absorbing effect is in electromagnetic simulation software based on high impedance surface in this example
HFSS.13 modeling and simulatings draw, Fig. 3 is the input impedance imaginary part figure of the high impedance surface in this example, during Fig. 4 is this example
Ripple rate curve map is inhaled, figure 4, it is seen that wave absorbing device realizes 0.9 in 5.33GHz-6.12GHz, 8.34GHz-17.32GHz
Suction ripple rate above, and have 0.8202 suction ripple rate in 2.09GHz.The wave absorbing device realizes multiband, broadband absorbing property.
Embodiment 2：
It is a kind of to realize that the wave absorbing device of multiband wave-absorbing effect uses five-layer structure based on high impedance surface, as shown in Figure 1.Open
The cellular construction of high impedance surface after seam is as shown in figure 5, the medium substrate material therefor of high impedance surface is FR4, and thickness is
1.4mm, unit size is 14mm*14mm.Underlying metal plate and surface period metal structure are all copper, and thickness is 0.02mm.Table
Face cycle metal pattern square metal length of side 13mm, cracks for four long square bars, the seam size of four long square bars
Identical, position is full symmetric, each stitches, a length of 7mm of oblong slot parallel with four sides of square metal, two opposite side it is rectangular
At a distance of 11mm, a width of 0.5mm of oblong slot outside shape.Buffer layer material therefor above high impedance surface is foam, thick
Spend for 5mm, be resistance film above buffer layer, sheet resistance is 377 sheet resistances.
Realize that the wave absorbing device of multiband wave-absorbing effect is in electromagnetic simulation software based on high impedance surface in this example
HFSS.13 modeling and simulatings draw, the input impedance imaginary part figure of high impedance surface during Fig. 6 in this example, during Fig. 7 is this example
Ripple rate curve map is inhaled, it can be seen from figure 7 that wave absorbing device realizes 0.9 in 3.56GHz-3.88GHz, 9.58GHz-20.53GHz
Suction ripple rate above, the wave absorbing device realizes multiband, broadband absorbing property.
In summary, the present invention realizes that the wave absorbing device of multiband wave-absorbing effect passes through in high impedance table based on high impedance surface
Crack and obtain on the square metal in face, realize multiband, broadband absorbing property, and wave absorbing device thickness of thin, unit size is small, beneficial to
Apply in engineering practice.
Claims (6)
1. a kind of multiband wave absorbing device realized based on high impedance surface, it is characterised in that：The wave absorbing device uses five-layer structure, institute
Three layers of composition high impedance surface below wave absorbing device is stated, the high impedance surface includes medium substrate (1) and is close to medium substrate
(1) metallic plate (2) of lower surface, in addition to the period surface metal structure (3) positioned at medium substrate (1) upper surface；It is described to inhale
Ripple device upper two layers are including the buffer layer (4) above high impedance surface and positioned at buffer layer (4) upper surface
Resistance film (5).
2. the multiband wave absorbing device according to claim 1 realized based on high impedance surface, it is characterised in that：The surface
Metal structure (3) is to crack to obtain on square metal, by being cracked in the cycle metal structure (3) of the high impedance surface
Multiple characteristic frequencies are obtained, the characteristic frequency of high impedance surface can be adjusted by the positions and dimensions for changing seam, from
And realize the regulation to wave absorbing device frequency range.
3. the multiband wave absorbing device according to claim 2 realized based on high impedance surface, it is characterised in that：The surface
Metal structure (3) is to crack to obtain on square metal, and seam is shaped as Jerusalem cross structure.
4. the multiband wave absorbing device according to claim 2 realized based on high impedance surface, it is characterised in that：The surface
Metal pattern (3) is to crack to obtain on square metal, and seam is shaped as four long square bars, the seam of four long square bars
Size is identical, and position is full symmetric, each stitches parallel with four sides of square metal.
5. the multiband wave absorbing device according to claim 1 realized based on high impedance surface, it is characterised in that：Described Jie
Matter substrate (1) material therefor is FR4, and underlying metal plate (2) and surface period metal structure (3) are all copper foil, and thickness is 0.02
± 0.005mm, buffer layer (4) is foam, and resistance film (5) is the resistive film of 377 sheet resistances.
6. the multiband wave absorbing device according to claim 1 realized based on high impedance surface, it is characterised in that：The wave absorbing device
Absorptivity calculation formula be A (ω)=1-R (ω), wherein, R (ω) for wave absorbing device input reflection coefficient modulus value square,
ω is frequency.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110190407A (en) * | 2019-05-14 | 2019-08-30 | 南京航空航天大学 | A kind of broadband wave absorbing device and broadband wave absorbing device array based on resistive film |
| CN112864634A (en) * | 2021-01-08 | 2021-05-28 | 宁波大学 | Perfect absorption incident angle adjustable electromagnetism absorbing structure |
| CN112864633A (en) * | 2021-01-08 | 2021-05-28 | 中南大学 | Broadband microwave absorber based on super surface |
| CN113063994A (en) * | 2021-03-24 | 2021-07-02 | 中国人民解放军国防科技大学 | Active super-surface strong irradiation field performance testing device and system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112864633A (en) * | 2021-01-08 | 2021-05-28 | 中南大学 | Broadband microwave absorber based on super surface |
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| CN113063994A (en) * | 2021-03-24 | 2021-07-02 | 中国人民解放军国防科技大学 | Active super-surface strong irradiation field performance testing device and system |
| CN113063994B (en) * | 2021-03-24 | 2022-06-14 | 中国人民解放军国防科技大学 | Active super-surface strong irradiation field performance testing device and system |
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Application publication date: 20171017 |