CN115821232A - Gas flow direction system of flowable thin film deposition equipment - Google Patents
Gas flow direction system of flowable thin film deposition equipment Download PDFInfo
- Publication number
- CN115821232A CN115821232A CN202211650799.XA CN202211650799A CN115821232A CN 115821232 A CN115821232 A CN 115821232A CN 202211650799 A CN202211650799 A CN 202211650799A CN 115821232 A CN115821232 A CN 115821232A
- Authority
- CN
- China
- Prior art keywords
- rps
- gas
- flow valve
- flow
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000427 thin-film deposition Methods 0.000 title claims abstract description 33
- 230000009969 flowable effect Effects 0.000 title claims abstract description 31
- 238000006243 chemical reaction Methods 0.000 claims abstract description 137
- 238000004140 cleaning Methods 0.000 claims abstract description 80
- 238000000034 method Methods 0.000 claims abstract description 71
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 25
- 238000007789 sealing Methods 0.000 claims description 13
- 239000011148 porous material Substances 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- 238000010494 dissociation reaction Methods 0.000 claims description 3
- 230000005593 dissociations Effects 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 4
- 238000012423 maintenance Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000003449 preventive effect Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 119
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- -1 fluorine ions Chemical class 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 238000005201 scrubbing Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to the technical field of semiconductor processing equipment, in particular to a gas flow direction system of a flowable thin film deposition device. The invention provides a gas flow direction system of a flowable thin film deposition device, which comprises a first RPS reaction unit, a second RPS reaction unit and a third RPS cleaning unit: the first RPS reaction unit can be connected with the first reaction chamber in an on-off manner and is used for dissociating and conveying the process gas; the second RPS reaction unit can be connected with the second reaction chamber in an on-off manner and is used for dissociating and conveying the process gas; and the third RPS cleaning unit can be connected with the first reaction chamber and the second reaction chamber respectively in an on-off manner and is used for dissociating and conveying the cleaning gas. According to the gas flow direction system of the flowable thin film deposition equipment, different formula controls are realized by controlling different gas inlet directions, different areas are cleaned, the cleaning effect of the dome chamber is improved, the number of running sheets for single preventive maintenance is increased, and the holding cost is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor processing equipment, in particular to a gas flow direction system of a flowable thin film deposition device.
Background
Plasma chemical vapor deposition (plasma chemical vapor deposition) refers to a technique of activating a reaction gas with plasma to promote a chemical reaction on a substrate surface or a near-surface space to generate a solid film.
The chinese patent CN202111665983.7 discloses a semiconductor device, in which an RPS device is provided to provide a plasma gas source for a reaction chamber, and the plasma gas source generates fluorine ions after a chemical reaction in the reaction chamber, so that the fluorine ions flow out from the reaction chamber.
However, as the thin film deposition Plasma apparatus in the prior art, a certain thin film is generated in the dome chamber when the process runs for a long time, and the cleaning gas of the RPS (Remote Plasma Source) apparatus cannot completely clean the dome chamber, which may cause the particle generation in the process chamber for a long time.
Disclosure of Invention
The invention aims to provide a gas flow direction system of a flowable thin film deposition device, which solves the problem that a dome chamber of the thin film deposition device under an RPS structure in the prior art is difficult to clean thoroughly and effectively.
In order to achieve the above object, the present invention provides a gas flow direction system of a flowable thin film deposition apparatus, comprising a first RPS reaction unit, a second RPS reaction unit, and a third RPS cleaning unit:
the first RPS reaction unit can be connected with the first reaction chamber in an on-off manner and is used for dissociating and conveying the process gas;
a second RPS reaction unit, which can be connected with the second reaction chamber in an on-off way and is used for dissociating and delivering the process gas,
and the third RPS cleaning unit can be connected with the first reaction chamber and the second reaction chamber respectively in an on-off manner and is used for dissociating and conveying the cleaning gas.
In one embodiment, the first RPS reaction unit is provided with a first water gas pipeline;
the first water-gas pipeline is provided with a first flow valve and is used for controlling the circulation of water gas to the first RPS reaction unit;
the second RPS reaction unit is provided with a second water gas pipeline;
and the second water-gas pipeline is provided with a second flow valve and is used for controlling the circulation of water gas to the second RPS reaction unit.
In one embodiment, the first RPS reaction unit is provided with a first clean gas line;
the first clean gas pipeline is provided with a third flow valve and is used for controlling clean gas to flow to the first RPS reaction unit;
the second RPS reaction unit is provided with a second clean gas pipeline;
and the second cleaning gas pipeline is provided with a fourth flow valve and used for controlling the cleaning gas to flow to the second RPS reaction unit.
In an embodiment, the third RPS scrubbing unit is provided with a third clean gas line;
and the third clean gas pipeline is provided with a fifth flow valve and used for controlling clean gas to flow to the third RPS cleaning unit.
In an embodiment, the first RPS reaction unit is provided with a first process gas pipeline for introducing a process gas;
and the second RPS reaction unit is provided with a second process gas pipeline for introducing process gas.
In one embodiment, when performing the process flow:
closing the first flow valve, the second flow valve, the third flow valve, the fourth flow valve and the fifth flow valve;
process gas is introduced into the first process gas pipeline and the second process gas pipeline;
the first RPS reaction unit dissociates the process gas and transmits the process gas to the first reaction chamber;
the second RPS reaction unit dissociates the process gas and delivers it to the second reaction chamber.
In one embodiment, when performing the RPS environment flow:
the first flow valve and the second flow valve are opened, and the water vapor enters the first RPS reaction unit and the second RPS reaction unit;
closing the third flow valve, the fourth flow valve and the fifth flow valve;
and protective gas is introduced into the first process gas pipeline and the second process gas pipeline.
In one embodiment, when performing a chamber-specific cleaning procedure:
closing the first flow valve, the second flow valve, the third flow valve and the fourth flow valve;
and the fifth flow valve is opened, and the cleaning gas enters the third RPS cleaning unit to be dissociated and is conveyed to the first reaction chamber and the second reaction chamber for cleaning.
In one embodiment, when performing a dome chamber cleaning procedure:
the first flow valve, the second flow valve and the fifth flow valve are closed;
the third flow valve is opened, and the cleaning gas enters the first RPS reaction unit to be dissociated and conveyed to the first reaction chamber;
and the fourth flow valve is opened, and the cleaning gas enters the second RPS reaction unit to be dissociated and is conveyed to the second reaction chamber.
In one embodiment, when performing a full cleaning procedure:
the first flow valve and the second flow valve are closed;
a third flow valve, a fourth flow valve and a fifth flow valve are opened;
the cleaning gas enters the first RPS reaction unit, the second RPS reaction unit and the third RPS cleaning unit, is dissociated and is conveyed to the first reaction chamber and the second reaction chamber.
In an embodiment, the third flow valve, the fourth flow valve and the fifth flow valve are provided with orifice plate sealing gaskets for adjusting gas distribution uniformity.
In an embodiment, the third RPS scrubbing unit is provided with a third clean gas line;
and the third clean gas pipeline is provided with a pore plate sealing gasket and used for adjusting the size of the airflow of the clean gas flowing to the third RPS cleaning unit.
In one embodiment, the aperture plate sealing gasket has a diameter of 0.5mm to 2.5mm.
In one embodiment, when performing a dome chamber cleaning procedure:
the first flow valve and the second flow valve are opened, and the water vapor enters the first RPS reaction unit and the second RPS reaction unit;
closing the third flow valve and the fourth flow valve;
and protective gas is introduced into the first process gas pipeline and the second process gas pipeline.
According to the gas flow direction system of the flowable thin film deposition equipment, different formula controls are realized by controlling different gas inlet directions, different areas are cleaned, the cleaning effect of a dome chamber is improved, the running number of single Preventative Maintenance (PM) is increased, and the single PM time is prolonged.
Drawings
The above and other features, properties and advantages of the present invention will become more apparent from the following description of the embodiments with reference to the accompanying drawings in which like reference numerals denote like features throughout the several views, wherein:
FIG. 1 discloses a top view of a gas flow system of a flowable thin film deposition apparatus according to embodiment 1 of the present invention;
FIG. 2 is a schematic view showing a gas flow direction system of a flowable thin film deposition apparatus according to embodiment 1 of the present invention;
FIG. 3 is a schematic front view of a gas flow direction system of a flowable thin film deposition apparatus according to example 1 of the present invention;
FIG. 4 is a schematic view showing a gas flow direction system of a flowable thin film deposition apparatus according to embodiment 2 of the present invention.
The meanings of the reference symbols in the figures are as follows:
101 a first RPS reaction unit;
102 a second RPS reaction unit;
103 a third RPS cleaning unit;
201 a first flow valve;
202 a second flow valve;
203 a third flow valve;
204 a fourth flow valve;
205 a fifth flow valve;
301 a first aqueous vapor line;
302 a second aqueous vapor line;
303 a first clean gas line;
304 a second clean gas line;
305 a third clean gas line;
306 a first process gas line;
307 a second process gas line;
a dome 401;
402 a shower head;
403 cover plate;
404 a chamber;
501 orifice plate sealing gasket.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Example 1
Fig. 1 discloses a top view of a gas flow system of a flowable thin film deposition apparatus according to embodiment 1 of the present invention, fig. 2 discloses a schematic diagram of a gas flow system of a flowable thin film deposition apparatus according to embodiment 1 of the present invention, fig. 3 discloses a schematic diagram of a gas flow system of a flowable thin film deposition apparatus according to embodiment 1 of the present invention, as shown in fig. 1-3, and the present invention proposes a gas flow system of a flowable thin film deposition apparatus, comprising a first RPS reaction unit 101, a second RPS reaction unit 102 and a third RPS cleaning unit 103;
a first RPS reaction unit 101, which is connected to the first reaction chamber in an on-off manner, for dissociating and delivering the process gas;
a second RPS reaction unit 102, switchably connected to the second reaction chamber, for dissociating and delivering the process gas,
a third RPS cleaning unit 103, which is connected to the first reaction chamber and the second reaction chamber respectively, for dissociation and delivery of the cleaning gas;
in the present embodiment, the process gas is NH3 gas, and the cleaning gas is NF3 gas.
The first reaction chamber and the second reaction chamber are both composed of a dome 401, a shower head 402, a cover plate 403 and a chamber 404.
As shown in fig. 2, the first RPS reaction unit 101 is provided with a first water and gas pipeline 301;
the first water gas pipeline 301 is provided with a first flow valve 201, and is used for controlling the circulation of water gas (H2O) to the first RPS reaction unit 101 to perform an RPS environment (RPS condition) process;
a flow valve (flow control valve), i.e. a flow control valve, controls the flow of an orifice by varying the size of the hydraulic resistance of the orifice under a certain pressure difference,
as shown in fig. 2, the second RPS reaction unit 102 is provided with a second water gas pipeline 302;
the second water gas line 302 is provided with a second flow valve 202 for controlling the flow of water gas (H2O) to the second RPS reaction unit 102 to perform an RPS environment (RPS condition) process.
As shown in fig. 2, the first RPS reaction unit 101 is provided with a first process gas pipeline 306 for introducing a process gas;
as shown in fig. 2, the second RPS reaction unit 102 is provided with a second process gas pipeline 307 for introducing a process gas.
As shown in fig. 2 and 3, the first RPS reaction unit 101 is provided with a first cleaning gas line 303;
the first cleaning gas pipeline 303 is provided with a third flow valve 203 for controlling the cleaning gas to flow to the first RPS reaction unit 101;
the second RPS reaction unit 102, provided with a second clean gas line 304;
the second purge gas line 304 is provided with a fourth flow valve 204 for controlling the flow of purge gas to the second RPS reaction unit 102.
The third flow valve 203 and the fourth flow valve 204 can avoid the probability that the gas of the first RPS reaction unit 101 and the second RPS reaction unit 102 enters the third RPS cleaning unit 103, and ensure the granularity and the service life of the third RPS cleaning unit 103.
As shown in fig. 3, the third RPS cleaning unit 103 is provided with a third cleaning gas line 305;
the third cleaning gas line 305 is provided with a fifth flow valve 205 for controlling the flow of cleaning gas to the third RPS cleaning unit 103.
When the process running is carried out for a long time and only the first RPS reaction unit 101 and the second RPS reaction unit 102 are used for cleaning, a certain thin film is still generated in the dome chamber to cause particles in the process chamber, and the third RPS cleaning unit 103 is used for further improving the cleaning effect of the dome chamber.
Furthermore, the third flow valve 203, the fourth flow valve 204 and the fifth flow valve 205 use an Orifice plate sealing gasket (Orifice) for adjusting the gas distribution uniformity.
Preferably, the sealing gasket of the pore plate has a diameter of 0.5mm to 2.5mm.
The gas flow direction of the gas flow direction system of the flowable thin film deposition apparatus under different operation flows will be described in detail with reference to fig. 2 and 3.
When a Process flow (Process) is performed:
closing the first flow valve 201, the second flow valve 202, the third flow valve 203, the fourth flow valve 204 and the fifth flow valve 205;
the first process gas pipe 306 is filled with process gases (NH 3 and other gases), and the first RPS reaction unit 101 dissociates the process gases and delivers the dissociated process gases to the first reaction chamber;
the second process gas line 307 is filled with process gases (NH 3 and other gases), and the second RPS reaction unit 102 dissociates the process gases and delivers the dissociated process gases to the second reaction chamber.
When performing an RPS environment flow (RPS condition):
the first and second flow valves 201 and 202 are opened, and water vapor (H2O) enters the first and second RPS reaction units 101 and 102;
the third flow valve 203, the fourth flow valve 204 and the fifth flow valve 205 are closed;
the first process gas line 306 and the second process gas line 307 are filled with 500sccm of the protection gas Ar to prevent H2O from entering the gas path.
When the chamber-specific cleaning procedure is performed, the third RPS cleaning unit 103 operates:
the first flow valve 201, the second flow valve 202, the third flow valve 203 and the fourth flow valve 204 are closed;
the fifth flow valve 205 is opened, the cleaning gas NF3 enters the third RPS cleaning unit 103 to be dissociated, and the dissociated F ions are delivered to the first reaction chamber and the second reaction chamber to be cleaned.
When the dome chamber cleaning process is performed, the first RPS reaction unit 101 and the second RPS reaction unit 102 operate:
the first, second and fifth flow valves 201, 202, 205 are closed;
the third flow valve 203 is opened, the cleaning gas NF3 uniformly enters the first RPS reaction unit 101 through an Orifice plate (Orifice) sealing gasket for dissociation, and dissociated F ions are conveyed to a dome of the first reaction chamber for cleaning;
the fourth flow valve 204 is opened, the cleaning gas NF3 uniformly enters the second RPS reaction unit 102 through an Orifice plate (Orifice) sealing gasket to be dissociated, and the dissociated F ions are delivered to the dome of the second reaction chamber to be cleaned.
The cleaning gas directly cleans the first RPS reaction unit 101 and the second RPS reaction unit 102, so that the first RPS reaction unit 101 and the second RPS reaction unit 102 can be cleaned by fluorine ions more efficiently without generating particle phenomenon too early, and the service life of the RPS reaction units is prolonged.
When the full cleaning process is performed, the first RPS reaction unit 101, the second RPS reaction unit 102, and the third RPS cleaning unit 103 operate:
the first flow valve 201 and the second flow valve 202 are closed, and the third flow valve 203, the fourth flow valve 204 and the fifth flow valve 205 are opened;
the cleaning gas NF3 enters the first RPS reaction unit 101, the second RPS reaction unit 102, and the third RPS cleaning unit 103, is dissociated and delivered to the first reaction chamber and the second reaction chamber.
Example 2
Compared with the embodiment 1, the embodiment 2 replaces the fifth flow valve of the embodiment 1 with an Orifice plate (Orifice) sealing gasket 501 to adjust the air flow, and the other structures are the same as the embodiment 1.
The diameter of the pore plate sealing gasket is 0.5mm to 2.5mm.
When performing a dome chamber cleaning procedure:
the first flow valve 201 and the second flow valve 202 are opened, and the water vapor enters the first RPS reaction unit 101 and the second RPS reaction unit 102;
the third flow valve 203 and the fourth flow valve 204 are closed;
the first process gas line 306 and the second process gas line 307 are filled with 500sccm of the shielding gas Ar to prevent H2O from entering the gas path.
According to the gas flow direction system of the flowable thin film deposition equipment, different formula control is realized by controlling different gas inlet directions, different areas are cleaned, the cleaning effect of a dome chamber is improved, the running number of single Preventive Maintenance (PM) is increased, the single PM time is prolonged, and the Cost of Ownership (COO) is reduced.
While, for purposes of simplicity of explanation, the methodologies are shown and described as a series of acts, it is to be understood and appreciated that the methodologies are not limited by the order of acts, as some acts may, in accordance with one or more embodiments, occur in different orders and/or concurrently with other acts from that shown and described herein or not shown and described herein, as would be understood by one skilled in the art.
As used in this application and the appended claims, the terms "a," "an," "the," and/or "the" are not intended to be inclusive in the singular, but rather are intended to be inclusive in the plural unless the context clearly dictates otherwise. In general, the terms "comprises" and "comprising" merely indicate that steps and elements are included which are explicitly identified, that the steps and elements do not form an exclusive list, and that a method or apparatus may include other steps or elements.
In the description of the present invention, it should be noted that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be directly connected or indirectly connected through intervening agents, or may be internally connected to the two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The embodiments described above are provided to enable persons skilled in the art to make or use the invention and that modifications or variations can be made to the embodiments described above by persons skilled in the art without departing from the inventive concept of the present invention, so that the scope of protection of the present invention is not limited by the embodiments described above but should be accorded the widest scope consistent with the innovative features set forth in the claims.
Claims (14)
1. A flowable thin film deposition apparatus gas flow direction system, comprising a first RPS reaction unit, a second RPS reaction unit, and a third RPS cleaning unit:
the first RPS reaction unit can be connected with the first reaction chamber in an on-off manner and is used for dissociating and conveying the process gas;
the second RPS reaction unit can be connected with the second reaction chamber in an on-off manner and is used for dissociating and conveying the process gas;
and the third RPS cleaning unit can be connected with the first reaction chamber and the second reaction chamber respectively in an on-off manner and is used for dissociating and conveying the cleaning gas.
2. The flowable thin film deposition apparatus gas flow system of claim 1, wherein the first RPS reaction unit is provided with a first water gas line;
the first water-gas pipeline is provided with a first flow valve and is used for controlling the circulation of water gas to the first RPS reaction unit;
the second RPS reaction unit is provided with a second water gas pipeline;
and the second water-gas pipeline is provided with a second flow valve and is used for controlling the circulation of water gas to the second RPS reaction unit.
3. The flowable thin film deposition apparatus gas flow direction system as recited in claim 2, wherein the first RPS reaction unit is provided with a first cleaning gas line;
the first clean gas pipeline is provided with a third flow valve and is used for controlling clean gas to flow to the first RPS reaction unit;
the second RPS reaction unit is provided with a second cleaning gas pipeline;
and the second cleaning gas pipeline is provided with a fourth flow valve and used for controlling the cleaning gas to flow to the second RPS reaction unit.
4. The flowable thin film deposition apparatus gas flow direction system of claim 3, wherein said third RPS cleaning unit is provided with a third cleaning gas line;
and the third clean gas pipeline is provided with a fifth flow valve and used for controlling clean gas to flow to the third RPS cleaning unit.
5. The flowable thin film deposition apparatus gas flow direction system as recited in claim 4, wherein the first RPS reaction unit is provided with a first process gas line for introducing a process gas;
and the second RPS reaction unit is provided with a second process gas pipeline for introducing process gas.
6. The flowable thin film deposition apparatus gas flow system of claim 5, wherein when performing the process flow:
closing the first flow valve, the second flow valve, the third flow valve, the fourth flow valve and the fifth flow valve;
process gas is introduced into the first process gas pipeline and the second process gas pipeline;
the first RPS reaction unit dissociates the process gas and transmits the process gas to the first reaction chamber;
the second RPS reaction unit dissociates the process gas and delivers it to the second reaction chamber.
7. The flowable thin film deposition apparatus gas flow system of claim 5, wherein when performing the RPS ambient flow:
the first flow valve and the second flow valve are opened, and the water vapor enters the first RPS reaction unit and the second RPS reaction unit;
closing the third flow valve, the fourth flow valve and the fifth flow valve;
and protective gas is introduced into the first process gas pipeline and the second process gas pipeline.
8. The gas flow system of claim 5, wherein when performing a chamber-specific cleaning procedure:
the first flow valve, the second flow valve, the third flow valve and the fourth flow valve are closed;
and the fifth flow valve is opened, and the cleaning gas enters the third RPS cleaning unit to be dissociated and is conveyed to the first reaction chamber and the second reaction chamber for cleaning.
9. The flowable thin film deposition apparatus gas flow direction system of claim 5, wherein when performing a dome chamber cleaning procedure:
closing the first flow valve, the second flow valve and the fifth flow valve;
opening a third flow valve, and enabling the cleaning gas to enter the first RPS reaction unit for dissociation and be conveyed to the first reaction chamber;
and the fourth flow valve is opened, and the cleaning gas enters the second RPS reaction unit to be dissociated and is conveyed to the second reaction chamber.
10. The flowable thin film deposition apparatus gas flow system of claim 5, wherein when performing a full clean flow:
the first flow valve and the second flow valve are closed;
a third flow valve, a fourth flow valve and a fifth flow valve are opened;
the cleaning gas enters the first RPS reaction unit, the second RPS reaction unit and the third RPS cleaning unit, is dissociated and is conveyed to the first reaction chamber and the second reaction chamber.
11. The gas flow system according to claim 4, wherein the third, fourth and fifth flow valves are provided with orifice plate sealing gaskets for adjusting gas distribution uniformity.
12. The flowable thin film deposition apparatus gas flow direction system of claim 3, wherein the third RPS cleaning unit is provided with a third cleaning gas line;
and the third clean gas pipeline is provided with a pore plate sealing gasket and used for adjusting the size of the airflow of the clean gas flowing to the third RPS cleaning unit.
13. A flowable thin film deposition apparatus gas flow system as claimed in claim 11 or claim 12, wherein the orifice sealing gasket has a diameter of 0.5mm to 2.5mm.
14. The flowable thin film deposition apparatus gas flow direction system of claim 13, wherein, when performing a dome chamber cleaning procedure:
the first flow valve and the second flow valve are opened, and the water vapor enters the first RPS reaction unit and the second RPS reaction unit;
closing the third flow valve and the fourth flow valve;
and protective gas is introduced into the first process gas pipeline and the second process gas pipeline.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211650799.XA CN115821232A (en) | 2022-12-21 | 2022-12-21 | Gas flow direction system of flowable thin film deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211650799.XA CN115821232A (en) | 2022-12-21 | 2022-12-21 | Gas flow direction system of flowable thin film deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115821232A true CN115821232A (en) | 2023-03-21 |
Family
ID=85517467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211650799.XA Pending CN115821232A (en) | 2022-12-21 | 2022-12-21 | Gas flow direction system of flowable thin film deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115821232A (en) |
-
2022
- 2022-12-21 CN CN202211650799.XA patent/CN115821232A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10920315B2 (en) | Plasma foreline thermal reactor system | |
| WO2010113946A1 (en) | Treatment device | |
| TWI647331B (en) | Film forming device, exhaust device, and exhaust method | |
| US6277235B1 (en) | In situ plasma clean gas injection | |
| TW200625387A (en) | System for cleaning a surface using cryogenic aerosol and fluid reactant | |
| JP2008210982A (en) | Gas feeding system and gas feeding integrative unit of semiconductor manufacturing apparatus | |
| JP6599599B2 (en) | EFEM system | |
| TW201020429A (en) | Balanced purge slit valve | |
| TW201730927A (en) | Substrate treating apparatus and substrate treating method | |
| TW201910553A (en) | Atomic layer deposition apparatus, film-forming method using atomic layer deposition apparatus, and cleaning method of atomic layer deposition apparatus | |
| US7862638B2 (en) | Gas supply system for semiconductor manufacturing apparatus | |
| CN115821232A (en) | Gas flow direction system of flowable thin film deposition equipment | |
| JP2004014642A (en) | Cleaning method and cleaning equipment | |
| JP2010056565A (en) | Apparatus for forming thin film | |
| TWI551711B (en) | Film forming apparatus and method of cleaning film forming apparatus | |
| KR20170077177A (en) | Ion implanter comprising integrated ventilation system | |
| CN111383886B (en) | System for preventing corrosion of etching gas supply pipeline and plasma reactor operation method | |
| JP4445226B2 (en) | Thin film manufacturing equipment | |
| KR101061922B1 (en) | Processing unit and processing method | |
| CN217635672U (en) | Processor for harmful gas | |
| JP4553265B2 (en) | Heat treatment apparatus and heat treatment method | |
| CN219873400U (en) | Semiconductor processing apparatus with remote plasma source | |
| JP2024001454A (en) | vaporizer | |
| CN221176149U (en) | Etching equipment | |
| CN117399390A (en) | Vacuum chamber, cleaning method, and semiconductor manufacturing apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |