CN217635672U

CN217635672U - Processor for harmful gas

Info

Publication number: CN217635672U
Application number: CN202221403763.7U
Authority: CN
Inventors: 王福清
Original assignee: Shanghai Xie Micro Environment Technology Co ltd
Current assignee: Shanghai Xie Micro Environment Technology Co ltd
Priority date: 2022-06-07
Filing date: 2022-06-07
Publication date: 2022-10-21
Anticipated expiration: 2032-06-07

Abstract

The utility model discloses a treater for harmful gas belongs to semiconductor harmful gas and handles technical field, has solved among the prior art harmful gas and can react in the thermal decomposition chamber and generate poisonous accessory substance, the lower problem that leads to decomposition efficiency lower in thermal decomposition chamber temperature. The processor comprises a thermal decomposition cavity and a reaction cavity; a connecting flange is arranged between the thermal decomposition cavity and the reaction cavity, and the thermal decomposition cavity and the reaction cavity are communicated through the connecting flange and do not have an overlapping area. The processor for harmful gases can be used for treating tail gas generated in a semiconductor processing technology.

Description

Processor for harmful gas

Technical Field

The utility model belongs to the technical field of semiconductor harmful gas handles, especially, relate to a treater for harmful gas.

Background

In the production process of the semi-conductor industry, a large amount of tail gas is generated, for example, gases containing silicon elements (monosilane, dichlorosilane, TEOS and the like) and perfluorinated compound gases (PFCs, tetrafluoromethane, sulfur hexafluoride, nitrogen trifluoride and the like), and for the treatment of the tail gas, a combination of thermal decomposition and oxidation reaction can be used.

In the prior art, there is the condition of overlapping each other usually between pyrolysis chamber and the reaction chamber, and on the one hand, harmful gas can react in the pyrolysis chamber and generate poisonous accessory substance, and on the other hand, because the temperature of reaction chamber is lower, it can influence the temperature in pyrolysis chamber, can't reach higher temperature, leads to pyrolysis efficiency to be lower.

SUMMERY OF THE UTILITY MODEL

In view of the above analysis, the present invention aims to provide a processor for harmful gas, which solves the problem that harmful gas in the prior art can react in the thermal decomposition cavity to generate toxic by-products, and the temperature of the thermal decomposition cavity is low, resulting in low decomposition efficiency.

The purpose of the utility model is mainly realized through the following technical scheme:

the utility model provides a processor for harmful gas, which comprises a thermal decomposition cavity and a reaction cavity; a connecting flange is arranged between the thermal decomposition cavity and the reaction cavity, and the thermal decomposition cavity and the reaction cavity are communicated through the connecting flange and do not have an overlapping area.

Furthermore, the connecting flange comprises a flange base body, and an overflow groove and an overflow branch pipe which are arranged on the flange base body; the water supply unit is communicated with the overflow groove through an overflow branch pipe, the included angle between the liquid inlet of the overflow branch pipe and the tangential direction of the side wall of the overflow groove is alpha, and alpha is more than 0 degree and less than 90 degrees.

Further, the reaction gas supply unit is used for providing reaction gas for harmful gas reaction, and comprises a plurality of reaction gas nozzles which are uniformly arranged along the axial direction of the thermal decomposition cavity.

Further, the device also comprises a heating unit for providing heat for the thermal decomposition cavity, wherein the heating unit comprises a flame generator arranged at the top end of the thermal decomposition cavity, and flame generated by the flame generator penetrates through the thermal decomposition cavity and extends into the reaction cavity.

Further, the flame generator is a gas flame generator or a plasma flame generator.

Furthermore, the heating unit also comprises a liquid cooling loop, the liquid cooling loop comprises a liquid cooling cavity, a liquid cooling liquid inlet pipe and a liquid cooling liquid outlet pipe, the liquid cooling inlet pipe and the liquid cooling liquid outlet pipe are positioned outside the liquid cooling cavity, and the liquid cooling cavity is positioned on the outer wall of the flame generator; the liquid cooling liquid inlet pipe and the liquid cooling liquid outlet pipe are respectively communicated with the liquid cooling cavity to form a liquid cooling loop.

Further, the inner wall of the reaction cavity is provided with a corrosion-resistant layer;

and/or the inner wall of the thermal decomposition cavity is provided with a fireproof layer.

Further, the side wall of the reaction cavity is provided with a handle.

The device further comprises an air inlet assembly, wherein the air inlet assembly comprises an air inlet pipe, an elbow and a purging pipe, and an air inlet of the air inlet pipe is communicated with a tail gas outlet of the processing equipment of the semiconductor device; the elbow comprises a first elbow pipe, a second elbow pipe and a third elbow pipe which are mutually communicated, the first elbow pipe is communicated with the air outlet of the air inlet pipe, the second elbow pipe is communicated with the purging pipe, and the third elbow pipe is communicated with the thermal decomposition cavity; the included angle between the axis of the second elbow pipe and the axis of the third elbow pipe is beta, beta is more than 90 degrees and less than or equal to 180 degrees, the included angle between the axis of the first elbow pipe and the axis of the third elbow pipe is gamma, and gamma is more than 0 degrees and less than or equal to 90 degrees.

Further, the water level observation pipe is also included; the side wall of the reaction cavity comprises an inner layer and an outer layer, a cavity between the inner layer and the outer layer is an interlayer cavity, and the water level observation pipe is communicated with the interlayer cavity between the inner layer and the outer layer.

Compared with the prior art, the utility model discloses can realize one of following beneficial effect at least:

a) The utility model provides a tail gas that a treater for harmful gas mainly produced to general semiconductor carries out innocent treatment, thermal decomposition chamber and reaction chamber pass through the flange intercommunication and do not have the overlap region, can guarantee that harmful gas and reaction gas's reaction all go on in the reaction chamber, and can not go on in the thermal decomposition intracavity, thereby can avoid generating solid particle and corrosive gas in the thermal decomposition intracavity, the life and the maintenance cycle in extension thermal decomposition chamber, it is required to explain that, the main effect in thermal decomposition chamber is heating tail gas and the partial harmful gas of thermal decomposition, its structure is comparatively complicated (there are some blind areas and dog-ear etc.), be difficult to accomplish complete corrosion protection, solid particle and corrosive gas can cause serious corruption to the thermal decomposition chamber in the thermal decomposition intracavity.

B) The utility model provides a be used for harmful gasThe processor is used for realizing thermal decomposition, the temperature in the thermal decomposition cavity can reach more than 1400 ℃, and the thermal decomposition cavity and the reaction cavity are independently arranged, so that on one hand, a fluid film is arranged in the reaction cavity and can take away most heat, and the thermal decomposition cavity and the reaction cavity are independently arranged, so that the influence of the fluid film on the temperature of the thermal decomposition cavity can be avoided; on the other hand, it can ensure that the harmful gas is only thermally decomposed and not oxidized/reduced, and avoid the generation of by-products (e.g. nitrogen oxides: NO, NO) ₂ Etc.), it should be noted that, besides harmful gases, the bottom gas is nitrogen, nitrogen and oxygen can generate a large amount of nitrogen oxides in the environment of above 1000 ℃, nitrogen oxides are also one of the atmospheric pollutants, and cannot be treated by the spray tower, and environmental pollution can be caused after emission.

Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and drawings.

Drawings

The drawings are only for purposes of illustrating particular embodiments and are not to be construed as limiting the invention, wherein like reference numerals are used to designate like parts throughout the drawings.

Fig. 1 is a schematic structural diagram of a processor for harmful gases according to an embodiment of the present invention;

fig. 2 is a partial schematic view of a processor for harmful gases according to an embodiment of the present invention;

fig. 3 is a schematic structural diagram of a reaction chamber in a processor for harmful gases according to an embodiment of the present invention;

FIG. 4 is a cross-sectional view of a reaction chamber in a processor for hazardous gases according to an embodiment of the present invention;

fig. 5 is a schematic structural diagram of a connection flange in a processor for harmful gases according to an embodiment of the present invention;

fig. 6 is a front view of a connection flange in a disposer for harmful gases according to an embodiment of the present invention.

Reference numerals:

1-a thermal decomposition chamber; 2-a reaction chamber; 3-a heating unit; 31-a flame generator; 32-liquid cooling liquid inlet pipe; 33-liquid cooling drain pipe; 4-a reaction gas supply unit; 5-a connecting flange; 51-flange base; 52-an overflow launder; 53-overflow branch; 6-a water tank; 7-a handle; 8-an air intake assembly; 81-air inlet pipe; 82-a purge tube; 83-a connector; 84-a first elbow pipe; 85-a second elbow pipe; 86-a third elbow pipe; 9-water level observation pipe.

Detailed Description

The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings, which form a part hereof, and which together with the embodiments of the invention serve to explain the principles of the invention.

Example one

The present embodiment provides a processor for harmful gases, especially suitable for processing gases containing silicon elements and PFCs gases, and the structure of the processor is shown in fig. 1 to fig. 6, and includes a thermal decomposition chamber 1, a reaction chamber 2, a heating unit 3 and a reaction gas supply unit 4, wherein the reaction gas is one or a mixture of two or more of air, oxygen, hydrogen and ammonia, the heating unit 3 is used for providing heat for the thermal decomposition chamber 1, a connecting flange 5 is arranged between the thermal decomposition chamber 1 and the reaction chamber 2, and the thermal decomposition chamber 1 and the reaction chamber 2 are communicated through the connecting flange 5 and do not have an overlapping region; the gas outlet of the reaction gas supply unit 4 is located at the side wall of the pyrolysis chamber 1 near one end of the connecting flange 5.

When the method is implemented, tail gas generated in the pan-semiconductor production process enters the thermal decomposition cavity 1, and in the thermal decomposition cavity 1, the tail gas is heated to be more than 1400 ℃ under the heating of the heating unit 3, so that part of harmful gas is thermally decomposed; when the tail gas which is not subjected to thermal decomposition passes through the gas outlet of the reaction gas supply unit 4, the tail gas is in contact with the reaction gas and is fully mixed with the reaction gas, and the reaction gas is driven to enter the reaction cavity 2 together for oxidation or reduction reaction, so that part of the tail gas which is not subjected to thermal decomposition is further converted into solid particles or gas which is easily dissolved in water; the solid particles and the gas which is easy to dissolve in water interact with the water film on the inner wall of the reaction cavity 2, and the water film takes the solid particles and the gas which is easy to dissolve in water away from the reaction cavity 2, so that the treatment of tail gas generated in the production process of the generic semiconductor is realized.

Compared with the prior art, the treater for harmful gas that this embodiment provided mainly carries out innocent treatment to the tail gas that the general semiconductor produced, pyrolysis chamber 1 and reaction chamber 2 pass through flange 5 intercommunication and do not have the overlap region, can guarantee that the reaction of harmful gas and reaction gas all goes on in reaction chamber 2, and can not go on in pyrolysis chamber 1, thereby can avoid producing solid particle and corrosive gas in pyrolysis chamber 1, prolong pyrolysis chamber 1's life and maintenance cycle, it needs to explain, pyrolysis chamber 1's main function is heating tail gas and the partial harmful gas of pyrolysis, its structure is comparatively complicated (there are some dead areas and dog-ear etc.), be difficult to accomplish complete corrosion protection, solid particle and corrosive gas can cause serious corruption to pyrolysis chamber 1 in pyrolysis chamber 1.

Meanwhile, in order to realize thermal decomposition, the temperature in the thermal decomposition cavity 1 can reach more than 1400 ℃, and the thermal decomposition cavity 1 and the reaction cavity 2 are independently arranged, so that on one hand, a fluid film is arranged in the reaction cavity 2, most of heat can be taken away by the fluid film, the thermal decomposition cavity 1 and the reaction cavity 2 are independently arranged, and the influence of the fluid film on the temperature of the thermal decomposition cavity 1 can be avoided; on the other hand, it is possible to ensure that the harmful gas is thermally decomposed without oxidation/reduction reaction, and to avoid the formation of by-products (e.g., nitrogen oxides: NO, NO) ₂ Etc.), it should be noted that, in addition to harmful gases, the bottom gas is nitrogen, nitrogen and oxygen can generate a large amount of nitrogen oxides in an environment of above 1000 ℃, nitrogen oxides are also one of atmospheric pollutants, and cannot be treated by a spray tower, and environmental pollution can be caused after emission.

In practical applications, the processor for harmful gases of the present embodiment can be used for the kind of exhaust gas generated from the semiconductor processing technology, see table 1:

TABLE 1 types of off-gases generated by the Pan-semiconductor processing

Process for the preparation of a coating	Produced tail gas
		Cleaning of	Cl ₂ 、ClF ₃ 、NF ₃ 、C ₂ H ₆ 、SF ₆ HCl, etc
Deposition of	NH ₃ 、N ₂ O、TEOS、SiH ₄ 、NO、WF ₆ Etc. of
		Lithography	Ar、F ₂ Ne, kr, he, etc
Etching of	NF ₃ 、C ₄ F ₈ 、COS、CF ₄ 、C ₂ F ₆ 、HF、CH ₃ F、SiF ₄ 、SF ₆ 、BCl ₃ Etc. of
		Ion implantation	BF ₃ 、B ₂ H ₆ 、AsH ₃ 、TEB、TEPO、PH ₃ Etc. of
Epitaxy	HCl、SiH ₂ Cl ₂ 、SiHCl ₃ 、H ₂ Etc. of

The total flow of the tail gas which can be treated by the device is 200-3000L/min, the removal efficiency of the harmful gas can reach more than 99% when the harmful gas treatment device is used for treating the tail gas, and the treated gas can be directly discharged to the atmospheric environment.

In addition, the harmful gas generates solid particles and water-soluble gas in the reaction chamber 2, wherein the solid particles gradually accumulate in the reaction chamber 2 to block the reaction chamber 2 if not cleaned in time. The above-mentioned connecting flange 5 is, for example, constructed as follows: the water supply device comprises a flange base body 51, an overflow groove 52 and overflow branch pipes 53, wherein the overflow groove 52 and the overflow branch pipes 53 are arranged on the flange base body 51, the water supply unit is communicated with the overflow groove 52 through the overflow branch pipes 53, the included angle between the liquid inlet of each overflow branch pipe 53 and the tangential direction of the side wall of the overflow groove 52 is alpha, and alpha is more than 0 degree and less than 90 degrees. In operation, water flow enters the overflow groove 52 through the overflow branch pipe 53, and the water flow enters the overflow groove 52 under the guidance of the overflow branch pipe 53 to form a rotating water flow which gradually rises and overflows from the overflow groove 52 into the reaction chamber 2 to form a spiral water film which completely covers the inner wall of the reaction chamber 2. Through the arrangement of the connecting flange 5, water flow with tangential component velocity can flow spirally on the inner wall of the reaction cavity 2 after meeting the inner wall of the reaction cavity 2, covers the whole inner wall of the reaction cavity 2 and has the characteristic of spiral flow, so that the coverage uniformity of a spiral water film can be improved, the problem of uneven distribution of the water film formed in a natural overflow mode is effectively solved, the corrosion of corrosive gas generated by tail gas on the side wall of the reaction cavity 2 is avoided, and the service life of the reaction cavity 2 is effectively prolonged; the spiral water film can further drive the tail gas in the reaction cavity 2 to rotate, the retention time of the tail gas in the reaction cavity 2 is prolonged, solid particles and gas soluble in water can contact and mix with the tail gas flowing in a rotating mode and the water film, and the tail gas and the gas are captured by the water film and flow into a subsequent water tank 6, so that the solid particles can be prevented from blocking the reaction cavity 2; because pyrolysis chamber 1 and reaction chamber 2 intercommunication, heating element 3 has certain heating effect to the spiral water film equally, the spiral water film after being heated can further promote high temperature tail gas and external heat and mass rate through flowing, in addition, because the spiral water film has certain tangential velocity, the flow path length of water film at 2 lateral walls of reaction chamber has been prolonged in other words, high temperature tail gas and external heat and mass rate also can be strengthened, further avoid reaction chamber 2 because of the damage that high temperature produced, the life of extension reaction chamber 2.

It should be noted that the spiral water film means that the water flow has a certain tangential velocity, so that the water film can be in a spiral rotation state on the inner wall of the reaction chamber 2.

Illustratively, the number of the overflow branch pipes 53 is 2 to 8, 2 to 8 overflow branch pipes 53 are uniformly arranged along the axial direction of the overflow groove 52, α is equal to or greater than 30 ° and equal to or less than 75 °, the flow rate of water in the overflow branch pipes 53 is 10 to 100L/min, and the flow temperature is 15 to 30 ℃.

Considering that the liquid inlet angle and the water flow of the overflow branch pipe 53 affect whether the water film can completely cover the side wall of the reaction chamber 2, the liquid inlet angle and the water flow speed need to be determined according to parameters such as tail gas composition, tail gas flow and water pressure, firstly, the tail gas composition (especially the gas proportion of solid particles generated by monosilane and the like) and the tail gas flow affect the generation amount of the solid particles, and exemplarily, the flow of monosilane is divided into low flow (less than 0.5L/min), medium flow (0.5-1.2L/min) and high flow (more than 1.2L/min) according to actual conditions; secondly, the water pressure affects the inflow of water and the form of a water film, and is classified into a low water pressure (0.4 to 0.6 Mpa) and a normal water pressure (0.6 to 1.0 Mpa) according to actual conditions.

In the practical application process, parameters are adjusted to realize the complete coverage of the water film on the inner wall surface according to the actual conditions and experimental data on site, and specific parameters are shown in table 2.

TABLE 2 relationship between monosilane flow, water pressure, feed angle, number, and water flow

Illustratively, preferred ranges or preferred values for the above specific parameters are found in table 3.

TABLE 3 preferred ranges for silane flow, water pressure, feed Angle, number and Water flow

As for the structure of the reaction gas supply unit 4, specifically, it includes a plurality of reaction gas nozzles, the plurality of reaction gas nozzles are uniformly arranged along the axial direction of the thermal decomposition chamber 1, the compressed reaction gas provides the reaction gas to the end of the thermal decomposition chamber 1 close to the connection flange 5 through the plurality of reaction gas nozzles, and in the flowing process of the tail gas along the thermal decomposition chamber 1, the tail gas contacts with the reaction gas and is fully mixed, and drives the reaction gas to enter the reaction chamber 2 together for oxidation or reduction reaction, further converting the harmful gas which is not thermally decomposed into solid particles or gas which is easily dissolved in water.

In order to ensure the heating efficiency of the heating unit 3, the heating unit 3 illustratively includes a flame generator 31 (e.g., a gas flame generator 31 or a plasma flame generator 31 or other forms of flame generators 31) disposed at the top end of the thermal decomposition chamber 1, a torch head of the flame generator 31 is located in the thermal decomposition chamber 1, and a flame (which may also be a plasma flame) generated by the flame generator 31 extends at least into the thermal decomposition chamber 1, which may also extend through the thermal decomposition chamber 1 and into the reaction chamber 2 to initiate a reaction in the reaction chamber 2 in an initial stage.

In order to further increase the temperature in the thermal decomposition chamber 1 and promote the thermal decomposition of the harmful gas, especially PFCs gas, the temperature of which needs to reach above 1400 ℃ to be able to perform the thermal decomposition or oxidation reaction, the flame generator 31 may be a plasma flame generator 31, because the temperature of the flame generated by the plasma flame generator 31 is high and can reach above 3000 ℃, so that the temperature in the thermal decomposition chamber 1 can be rapidly heated to above 2000 ℃ and far above 1400 ℃, thereby ensuring the thermal decomposition effect of the harmful gas.

Considering that the flame temperature generated by the flame generator 31 is high, in order to promote the heat dissipation of the flame generator 31, the heating unit 3 further comprises a liquid cooling loop, the liquid cooling loop comprises a liquid cooling cavity, and a liquid cooling liquid inlet pipe 32 and a liquid cooling liquid outlet pipe 33 which are positioned outside the liquid cooling cavity, the liquid cooling cavity is positioned on the outer wall of the flame generator 31, the liquid cooling liquid inlet pipe 32 and the liquid cooling liquid outlet pipe 33 are respectively communicated with the liquid cooling cavity, the three parts form the liquid cooling loop, and the cooling liquid (for example, cooling water with the temperature of 20-25 ℃) cools the side wall of the flame generator 31 among the liquid cooling liquid inlet pipe 32, the liquid cooling liquid outlet pipe 33 and the liquid cooling cavity. It should be noted that, for the liquid-cooling chamber, the outer shell of the flame generator 31 may be processed into a double-layer shell, and the cavity between the double-layer shell is used as the liquid-cooling chamber. Like this, through the setting of liquid cooling return circuit, can carry out effectual cooling to flame generator 31's shell, the condition that can avoid flame generator 31's high temperature to cause the damage basically takes place.

In order to further improve the corrosion resistance of the side wall of the reaction chamber 2, the inner wall of the reaction chamber 2 is provided with a corrosion-resistant layer (e.g., teflon layer), by which the corrosion resistance of the inner wall of the reaction chamber 2 can be effectively improved.

In order to further improve the high temperature resistance of the pyrolysis cavity 1, the inner wall of the pyrolysis cavity 1 is provided with a fireproof layer, and the pyrolysis cavity 1 can be effectively protected by the fireproof layer due to the high temperature resistance of the pyrolysis cavity 1.

In order to facilitate the installation and replacement of the reaction chamber 2, the side wall of the reaction chamber 2 is provided with a handle 7, and an operator can install and replace the reaction chamber 2 more conveniently by holding the handle 7.

It will be appreciated that in order to be able to convey the off-gases from the processing equipment of the semiconductor-flooded furnace into the pyrolysis chamber 1, the above-described processor for harmful gases also comprises a gas inlet module 8, the off-gas outlet of the processing equipment of the semiconductor-flooded furnace being connected to the gas inlet of the pyrolysis chamber 1 via the gas inlet module 8.

To the structure of the gas inlet assembly 8, specifically, it includes the inlet pipe 81, elbow and connecting pipe that connect gradually, the air inlet of inlet pipe 81 with the tail gas outlet intercommunication of the processing equipment of general semiconductor, the gas outlet of inlet pipe 81 passes through connecting piece 83 (for example, flexible connecting piece 83) and elbow intercommunication, the gas outlet of elbow communicates with pyrolysis chamber 1, tail gas loops through inlet pipe 81 and elbow and lets in pyrolysis chamber 1.

Considering that solid particles may flow into the air intake assembly 8 and be deposited at the elbow, the air intake assembly 8 further includes a purge pipe 82, the elbow is a three-way elbow and includes a first elbow pipe 84, a second elbow pipe 85 and a third elbow pipe 86 which are communicated with each other, wherein the first elbow pipe 84 is communicated with the air outlet of the air intake pipe 81, the second elbow pipe 85 is communicated with the purge pipe 82, the air outlet end of the purge pipe 82 is provided with a purge nozzle, and the third elbow pipe 86 is communicated with the thermal decomposition chamber 1, so that, by the arrangement of the purge pipe 82, when the amount of the solid particles deposited at the elbow is too large, the purge pipe 82 may be opened, and the gas in the purge pipe 82 is ejected from the purge nozzle, so that the deposited solid particles can be blown into the thermal decomposition chamber 1 again, and the solid particles are prevented from blocking the air intake assembly 8.

Illustratively, the included angle between the axis of the second elbow pipe 85 and the axis of the third elbow pipe 86 is β,90 ° < β ≦ 180 °, the included angle between the axis of the first elbow pipe 84 and the axis of the third elbow pipe 86 is γ,0 ° < γ ≦ 90 °, the purge gas of the purge pipe 82 is an inert gas (e.g., nitrogen, etc.), and the purge flow rate is 10 to 100L/min.

It is worth noting that, in the process of tail gas treatment, the inner wall of the reaction cavity 2 is always corroded by corrosive gas, the tightness of the reaction cavity 2 is crucial to the effect of tail gas treatment, and in order to enable an operator to visually judge whether the reaction cavity 2 leaks, the processor for harmful gas further comprises a water level observation tube 9, the side wall of the reaction cavity 2 is of a sandwich structure and comprises an inner layer and an outer layer, a cavity between the inner layer and the outer layer is a sandwich cavity, and the water level observation tube 9 is communicated with the sandwich cavity between the inner layer and the outer layer, so that once the inner layer of the reaction cavity 2 leaks due to corrosion, leaked water can enter the sandwich cavity, and because the water level observation tube 9 is communicated with the sandwich cavity, the water level in the water level observation tube 9 can be correspondingly observed to rise, thereby giving an early warning to the operator, and reminding the operator of the leakage of the inner layer of the reaction cavity 2 without disassembling the reaction cavity 2.

The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention should be covered by the present invention.

Claims

1. A processor for harmful gases is characterized by comprising a thermal decomposition cavity and a reaction cavity;

a connecting flange is arranged between the thermal decomposition cavity and the reaction cavity, and the thermal decomposition cavity is communicated with the reaction cavity through the connecting flange and does not have an overlapping area.

2. The processor for harmful gas according to claim 1, wherein the connection flange includes a flange base, and an overflow groove and an overflow branch provided on the flange base;

the water supply unit is communicated with the overflow groove through an overflow branch pipe, the included angle between the liquid inlet of the overflow branch pipe and the tangential direction of the side wall of the overflow groove is alpha, and alpha is more than 0 degree and less than 90 degrees.

3. The processor for harmful gas according to claim 1, further comprising a reaction gas supply unit for supplying a reaction gas for harmful gas reaction, the reaction gas supply unit including a plurality of reaction gas nozzles, the plurality of reaction gas nozzles being uniformly arranged in an axial direction of the thermal decomposition chamber.

4. The processor for harmful gases according to claim 1, further comprising a heating unit for supplying heat to the pyrolysis chamber, wherein the heating unit comprises a flame generator disposed at a top end of the pyrolysis chamber, and a flame generated by the flame generator penetrates through the pyrolysis chamber and extends into the reaction chamber.

5. The processor for harmful gas according to claim 4, wherein the flame generator is a gas flame generator or a plasma flame generator.

6. The processor for harmful gases according to claim 4, wherein said heating unit further comprises a liquid cooling loop, said liquid cooling loop comprises a liquid cooling chamber, and a liquid cooling inlet pipe and a liquid cooling outlet pipe located outside said liquid cooling chamber, said liquid cooling chamber is located on the outer wall of the flame generator;

the liquid cooling liquid inlet pipe and the liquid cooling liquid outlet pipe are respectively communicated with the liquid cooling cavity to form a liquid cooling loop.

7. The processor for harmful gases according to any one of claims 1 to 6, wherein the inner wall of the reaction chamber is provided with a corrosion-resistant layer;

8. The processor for harmful gases according to any one of claims 1 to 6, wherein a side wall of the reaction chamber is provided with a handle.

9. The processor for harmful gases according to any one of claims 1 to 6, further comprising a gas intake assembly, the gas intake assembly comprising a gas intake pipe, an elbow and a purge pipe, the gas intake of the gas intake pipe communicating with an exhaust gas outlet of a processing equipment of a semiconductor-smelting device;

the elbow comprises a first elbow pipe, a second elbow pipe and a third elbow pipe which are mutually communicated, the first elbow pipe is communicated with the gas outlet of the gas inlet pipe, the second elbow pipe is communicated with the purging pipe, and the third elbow pipe is communicated with the thermal decomposition cavity;

the included angle between the axis of the second elbow pipe and the axis of the third elbow pipe is beta, beta is more than 90 degrees and is less than or equal to 180 degrees, the included angle between the axis of the first elbow pipe and the axis of the third elbow pipe is gamma, and gamma is more than 0 degrees and is less than or equal to 90 degrees.

10. The processor for harmful gas according to any one of claims 1 to 6, further comprising a water level observation pipe;

the reaction cavity side wall comprises an inner layer and an outer layer, a cavity between the inner layer and the outer layer is an interlayer cavity, and the water level observation pipe is communicated with the interlayer cavity between the inner layer and the outer layer.