CN117399390A

CN117399390A - Vacuum chamber, cleaning method, and semiconductor manufacturing apparatus

Info

Publication number: CN117399390A
Application number: CN202210799830.XA
Authority: CN
Inventors: 曾杰; 王少雷; 杨荣; 辛桂珍; 时小山; 张畅; 姚道宇; 赵杰; 许继业
Original assignee: Huawei Technologies Co Ltd
Current assignee: Huawei Technologies Co Ltd
Priority date: 2022-07-08
Filing date: 2022-07-08
Publication date: 2024-01-16

Abstract

The embodiment of the application provides a vacuum cavity, a cleaning method and semiconductor manufacturing equipment, wherein the vacuum cavity is provided with an air supply assembly, the air supply assembly comprises an air supply pipeline and at least one nozzle, the air supply pipeline is used for connecting the at least one nozzle and a cleaning gas source, the nozzle is used for spraying cleaning gas into the vacuum cavity, the air pressure in the vacuum cavity in the spraying process of the cleaning gas is smaller than or equal to a first threshold value, and the first threshold value is smaller than or equal to 10 ³ Pa, the cleaning gas forms a jet of gas having directionality when exiting the nozzle. The scheme of this application can realize the clean in situ under the vacuum environment.

Description

Vacuum chamber, cleaning method, and semiconductor manufacturing apparatus

Technical Field

The embodiment of the application relates to the technical field of vacuum cleaning, in particular to a vacuum cavity, a cleaning method and semiconductor manufacturing equipment.

Background

The inside of vacuum equipment for semiconductor device production needs to maintain high cleanliness to avoid contaminants such as dust or other particulates from damaging the semiconductor devices, thereby affecting the yield and reliability of the semiconductor devices. With the development of semiconductor technology, the integration level of semiconductor devices is higher and the size is smaller, and the probability of defects of the semiconductor devices caused by pollutants is higher and higher, so that higher requirements are placed on the cleanliness of the inside of vacuum equipment. In the process of manufacturing the semiconductor device, pollutants are continuously generated, and the vacuum equipment needs to be cleaned regularly so as to prevent the semiconductor device from being polluted. The low cleaning efficiency of the contaminants may result in an increase in time cost, thereby affecting the manufacturing efficiency of the semiconductor device.

Therefore, how to reduce contaminants in a vacuum environment is a highly desirable problem.

Disclosure of Invention

The embodiment of the application provides a vacuum cavity, a cleaning method and semiconductor manufacturing equipment, which can realize in-situ cleaning in a vacuum environment and improve the cleanliness in the vacuum cavity.

In a first aspect, a vacuum chamber is provided, an air outlet of the vacuum chamber is connected to a vacuum pump, the vacuum pump is used for exhausting the vacuum chamber, an air supply assembly is arranged in the vacuum chamber, the air supply assembly comprises an air supply pipeline and at least one nozzle, and the air supply pipeline is used for connecting the at least one nozzle with cleaning airThe body source, the nozzle is used for spraying the cleaning gas into the vacuum cavity, the air pressure in the vacuum cavity is less than or equal to a first threshold value in the spraying process of the cleaning gas, and the first threshold value is less than or equal to 10 ³ Pa, the cleaning gas forms a jet of gas with directionality as it leaves the nozzle.

In the scheme of the embodiment of the application, the vacuum cavity in the cleaning process is in a vacuum state, so that in-situ cleaning in a vacuum environment is realized, and the reduction of production efficiency caused by the damage to the vacuum environment is avoided. The gas in the vacuum environment is thin, the gas mass is smaller, and therefore the resistance to the gas flow is also small. Meanwhile, the nozzle provides initial speed for the jet air flow, so that the jet air flow reaching the area to be cleaned has larger kinetic energy or larger momentum, and is favorable for replacing pollutants attached to the inner wall of the vacuum cavity or pollutants on the surfaces of components in the vacuum cavity, and the pollutant removal efficiency is improved. The scheme of this application embodiment not only can take very little size pollutant out of vacuum chamber, to the pollutant that has adhesive force and the pollutant of bigger size, the scheme of this application embodiment also can realize effective cleanness.

With reference to the first aspect, in certain implementations of the first aspect, the at least one nozzle includes one or more rows of nozzles, wherein a spacing between adjacent nozzles of each row is 50-100 mm.

For example, a plurality of nozzles in the same row may be understood as a plurality of nozzles in the same straight line and the ejection direction is the same.

With reference to the first aspect, in certain implementations of the first aspect, the cavity of the vacuum chamber is cubic or cuboid, and the at least one nozzle includes a first set of nozzles, the first set of nozzles including a row of nozzles located on one side of a first inner wall of the vacuum chamber, the first set of nozzles being configured to spray cleaning gas along the first inner wall, the first set of nozzles being directed toward the gas outlet of the vacuum chamber.

For example, the spray direction of the first set of nozzles may be parallel to the first inner wall.

Thus, the whole coverage of the jet air flow to the first inner wall is facilitated, and the cleaning effect of the first inner wall is improved. The clean gas flowing through the first inner wall can flow towards the gas outlet of the vacuum cavity, so that gas backflow or turbulence is avoided, and the cleaning effect is further affected.

With reference to the first aspect, in some implementations of the first aspect, the cavity of the vacuum chamber is cubic or cuboid, at least one nozzle includes a second group of nozzles, the second group of nozzles includes two rows of nozzles arranged in an L-shape, the two rows of nozzles are respectively located on one side of a second inner wall of the vacuum chamber and one side of a third inner wall of the vacuum chamber, the two rows of nozzles are respectively used for spraying cleaning gas along the second inner wall and the third inner wall, and the second group of nozzles faces an air outlet of the vacuum chamber.

The second group of nozzles sprays cleaning gas along the second inner wall and the third inner wall, so that the whole coverage of the spraying gas flow on the second inner wall and the third inner wall is facilitated, and the cleaning effect of the second inner wall and the third inner wall is improved. The second group of nozzles face the air outlet of the cavity, so that the cleaning gas flowing through the second inner wall and the third inner wall can flow towards the air outlet of the vacuum cavity, and the cleaning effect is influenced by avoiding gas backflow or turbulence.

With reference to the first aspect, in some implementations of the first aspect, the cavity of the vacuum chamber is cylindrical, at least one nozzle includes a third set of nozzles, the third set of nozzles includes two rows of nozzles arranged at intervals along a direction parallel to an axial direction of the vacuum chamber, the third set of nozzles is used for spraying the cleaning gas along a tangential direction of a fourth inner wall of the vacuum chamber, and the third set of nozzles is located opposite to an air outlet of the vacuum chamber.

The third group of nozzles sprays cleaning gas along the fourth inner wall, so that the whole coverage of the spraying gas flow on the fourth inner wall is facilitated, and the cleaning quality of the fourth inner wall is improved. The third group of nozzles are positioned at the opposite sides of the air outlet of the vacuum cavity, jet air flows along the fourth inner wall until reaching the air outlet of the vacuum cavity at the opposite sides of the third group of nozzles, and the jet air is discharged from the air outlet of the vacuum cavity, so that the occurrence of air backflow or turbulence is avoided, and the cleaning effect is further influenced.

With reference to the first aspect, in certain implementations of the first aspect, the at least one nozzle includes a fourth set of nozzles including one or more nozzles located at a top of the vacuum chamber, the fourth set of nozzles facing an air outlet of a bottom of the vacuum chamber.

The flow direction of the jet air stream of the fourth set of nozzles passes through the side wall of the vacuum chamber. The fourth group of nozzles face the air outlet at the bottom of the vacuum cavity, and the cleaning gas flowing through the side wall can flow towards the air outlet of the vacuum cavity, so that the occurrence of gas backflow or turbulence is avoided, and the cleaning effect is further influenced.

With reference to the first aspect, in certain implementations of the first aspect, at least one nozzle is configured to inject a cleaning gas toward a target area within the vacuum chamber, and a size of an air outlet of the at least one nozzle is associated with the target area, or a length of the at least one nozzle is associated with the target area.

Illustratively, the target region may include at least one of an inner wall of the vacuum chamber or a component within the vacuum chamber.

In the solution of the embodiment of the application, the cleaning gas is sprayed into the vacuum cavity through the nozzle, so that the spraying gas flow with directivity is formed, and the spraying gas flow, for example, the concentration, the initial speed and the like of the spraying gas flow distribution can be adjusted by adjusting the size of the nozzle, so that the coverage range of the spraying gas flow is adjusted. According to the scheme, the coverage range of the jet air flow can be accurately controlled to the centimeter level, so that the size of the spray head can be adjusted according to the target area to cover the target area more comprehensively and accurately, fixed-point cleaning is facilitated, and the influence on other areas is avoided while the cleaning effect is improved.

With reference to the first aspect, in certain implementations of the first aspect, at least one nozzle is used to spray the cleaning gas toward a target area within the vacuum chamber, and a size of an air outlet of the at least one nozzle is determined according to a distance between the nozzle and the target area.

Where the target area is far away, a nozzle with a smaller outlet size may be used. Nozzles with smaller outlet dimensions can provide a greater initial velocity for the jet stream, facilitating the jet stream to reach the target area. When the target area is close, a nozzle having a large air outlet size may be used. The nozzle with the larger air outlet size can provide smaller initial speed for the jet air flow, and the phenomenon that the momentum of the jet air flow is excessive when the jet air flow reaches a target area is avoided, so that the position of a part in the vacuum cavity is moved and even the part in the vacuum cavity is damaged.

With reference to the first aspect, in certain implementations of the first aspect, a length of the at least one nozzle is determined according to a distance between the nozzle and the target area.

The nozzles provide directionality to the jet air flow so that the direction of the air flow is more focused. The longer the length of the nozzle, the higher the concentration of the jet stream and the further the jet stream can reach. The shorter the length of the nozzle, the lower the concentration of the jet stream and the closer the jet stream can reach.

With reference to the first aspect, in certain implementations of the first aspect, a length of the at least one nozzle is determined according to a range of the target area. The length of at least one nozzle is inversely related to the size of the extent of the target area.

Where the target area is small, a nozzle of greater length may be used. The nozzle with larger length can enable the jet airflow to be more concentrated, is more beneficial to accurately controlling the coverage area of the jet airflow, can realize more comprehensive and more accurate coverage of a target area, is beneficial to realizing fixed-point cleaning, and avoids affecting other areas.

With reference to the first aspect, in certain implementations of the first aspect, the air outlet of the at least one nozzle is 1 to 10mm in size.

The shape of the air outlet of the nozzle may be square or circular, for example.

For example, when the air outlet shape of the nozzle is square, the air outlet size of the nozzle may be understood as the length or width of the square, or the like. For another example, when the shape of the air outlet of the nozzle is a circle, the air outlet size of the nozzle may be understood as a radius, a diameter, a circumference, an area, or the like of the circle.

With reference to the first aspect, in certain implementations of the first aspect, the at least one nozzle has a length of 30 to 300mm.

With reference to the first aspect, in certain implementations of the first aspect, the cleaning gas includes nitrogen or an inert gas.

With reference to the first aspect, in certain implementations of the first aspect, the vacuum chamber is provided with a valve for controlling the cleaning gas source to provide the jetting gas to the nozzle.

In a second aspect, a cleaning method is provided, comprising: carrying out exhaust treatment on the vacuum cavity through a vacuum pump; injecting a cleaning gas into the vacuum chamber through the at least one nozzle under a condition that the air pressure in the vacuum chamber is low to a second threshold value; when the air pressure in the vacuum cavity reaches a first threshold value, continuing to exhaust the vacuum cavity through the vacuum pump until the air pressure in the vacuum cavity is smaller than a second threshold value again, wherein the second threshold value is smaller than the first threshold value, and the first threshold value is smaller than or equal to 10 ³ pa。

The vacuum pump can keep working state in the process of spraying cleaning gas into the vacuum cavity, namely the vacuum pump can continuously exhaust the vacuum cavity. Illustratively, when the air pressure in the vacuum chamber is low to the second threshold, the cleaning gas is injected into the vacuum chamber, and in the process, the power of the vacuum pump can be reduced to reduce the exhaust effect, so that the air pressure in the vacuum chamber rises; when the air pressure in the vacuum chamber reaches a first threshold, the power of the vacuum pump can be increased to increase the exhaust effect, so that the air pressure in the vacuum chamber is reduced. Or, the power of the vacuum pump may be kept unchanged, as long as the air pressure in the vacuum chamber is in a trend of increasing after the air pressure in the vacuum chamber is low to the second threshold value, and the air pressure in the vacuum chamber is in a trend of decreasing after the air pressure in the vacuum chamber reaches the first threshold value. Alternatively, the vacuum pump may be turned off during the injection of the cleaning gas into the vacuum chamber, and the vacuum pump may be turned back on when the air pressure in the vacuum chamber reaches the first threshold.

In the embodiment of the application, the air pressure in the vacuum cavity during the cleaning process does not exceed 10 ³ Pa, i.e.The vacuum cavity is always in a vacuum state in the cleaning process, the air pressure in the vacuum cavity can not return to the standard atmospheric pressure, the time required by cleaning is reduced, the cleaning efficiency is improved, the vacuum cavity can return to the working state as soon as possible, and therefore the cost is saved. In addition, in the cleaning process, the vacuum cavity is in a vacuum state, so that the stable operation of the vacuum equipment can be ensured. The vacuum cavity in the scheme of the embodiment of the application can enter the standby state after cleaning is completed, namely, the scheme of the embodiment of the application can clean the vacuum cavity and parts in the vacuum cavity under the vacuum environment, and in-situ dust removal is realized.

In addition, in the scheme of the embodiment of the application, the cleaning gas can be sprayed into the vacuum cavity through the nozzle, the nozzle can provide initial speed for the sprayed gas flow, and the gas pressure in the vacuum cavity in the cleaning process is not more than 10 ³ Pa, it is ensured that the kinetic energy of the jet air flow is large enough to remove particles when reaching the area to be cleaned, and the position of the component in the vacuum chamber is not moved or even destroyed due to the excessive large kinetic energy.

With reference to the second aspect, in certain implementations of the second aspect, when the air pressure in the vacuum chamber rises to the first threshold, continuing to perform the exhaust treatment on the vacuum chamber by the vacuum pump until the air pressure in the vacuum chamber is less than or equal to the second threshold again, further including: when the air pressure in the vacuum cavity is smaller than or equal to the second threshold value again, jetting cleaning gas into the vacuum cavity through at least one nozzle again to enable the air pressure in the vacuum cavity to rise to the first threshold value again; the exhaust treatment and the injection of the cleaning gas are repeated 3 to 200 times.

For example, the vacuum pump may be in operation at all times during cleaning. In this way, in the process of injecting the cleaning gas into the vacuum chamber, the air pressure in the vacuum chamber is gradually increased until the air pressure in the vacuum chamber reaches the first threshold value, after stopping injecting the cleaning gas into the vacuum chamber, the air pressure in the vacuum chamber is gradually decreased, and after the air pressure in the vacuum chamber is decreased again to the second threshold value, the cleaning gas is injected into the vacuum chamber, and the above-mentioned processes are repeated.

The cleaning quality can be improved by increasing the cycle times, and pollutants in the vacuum cavity can be effectively removed, so that the yield and the reliability of the product are improved. In the embodiments of the present application, since less time is required for each cycle, properly increasing the number of cycles does not result in a significant increase in cleaning time. In other words, the scheme of the embodiment of the application can realize the balance of the cleaning efficiency and the cleaning quality, and improve the cleaning quality while guaranteeing the cleaning efficiency.

With reference to the second aspect, in certain implementations of the second aspect, the cleaning gas includes nitrogen or an inert gas.

With reference to the second aspect, in certain implementations of the second aspect, the second threshold is less than or equal to 10 ^-1 pa。

Generally, the higher the vacuum, i.e., the lower the air pressure in the vacuum chamber, the more precise the control required, the longer the time required for the exhaust treatment, the higher the time cost, and the lower the cleaning efficiency.

According to an embodiment of the present application, the second threshold may be 10 ^-1 Pa, a first threshold value of 10 ³ Pa, this can reduce the time required for each cycle, improve cleaning efficiency, and thereby save costs. Specifically, during the process of injecting the cleaning gas into the vacuum chamber, the gas pressure in the vacuum chamber is from 10 ^-1 Pa is increased to 10 ³ Pa can stop spraying, the time of the process is far less than that of the air pressure in the vacuum cavity from 10 ^-1 Pa is increased to the standard atmospheric pressure; in the subsequent circulation process, the air pressure in the vacuum cavity is changed from 10 through exhaust treatment ³ Pa is reduced to 10 ^-1 Pa can repeat the jetting process of the cleaning gas, the time of the exhausting process is far less than the time of reducing the air pressure in the vacuum cavity from the standard atmospheric pressure to 10 ^-1 Pa. Therefore, the scheme can reduce the time required for each cycle and improve the cleaning efficiency.

It should be appreciated that the extensions, definitions, explanations and illustrations of the relevant content in the first aspect described above also apply to the same content in the second aspect.

In a third aspect, there is provided a semiconductor manufacturing apparatus comprising a vacuum chamber as in any one of the first aspects.

In a fourth aspect, there is provided a semiconductor manufacturing apparatus comprising a processor and a memory, the processor and the memory being coupled for reading and executing instructions in the memory to perform the method of any of the second aspects.

Drawings

FIG. 1 is a schematic illustration of a vacuum chamber according to an embodiment of the present application;

FIG. 2 is a schematic illustration of the coverage of a nozzle according to an embodiment of the present application;

FIG. 3 is a schematic block diagram of a single row multiple nozzle scheme in accordance with an embodiment of the present application;

FIG. 4 is a schematic block diagram of a dual row multiple nozzle scheme according to an embodiment of the present application;

FIG. 5 is a schematic block diagram of a single nozzle approach of an embodiment of the present application;

FIG. 6 is a schematic block diagram of a vacuum chamber according to an embodiment of the present application;

fig. 7 is a schematic flow chart of a cleaning method of an embodiment of the present application.

Detailed Description

The technical solutions in the embodiments of the present application will be described below with reference to the accompanying drawings.

The scheme of the embodiment of the application can be applied to the fields of semiconductors, flat panel displays (flat panel display, FPDs), LEDs or photovoltaic cells and the like which need to be processed in a vacuum environment, and the cleaning of the vacuum environment is realized. Since the semiconductor manufacturing apparatus has a high requirement for cleanliness, the cleaning process applied to the semiconductor manufacturing apparatus by the scheme of the embodiment of the present application will be described hereinafter as an example, and the scheme of the embodiment of the present application is not limited.

Semiconductor devices are susceptible to contamination by a variety of contaminants during processing, and can be categorized into four categories: microparticles, metal ions, chemicals, bacteria, and the like. Of these, particulates are the most dominant source of contamination.

The higher the integration level and the smaller the size of the semiconductor device, the greater the probability that the particles will cause defects in the semiconductor device. Generally, to avoid particles damaging the features on the device, the size of the particles needs to be less than 1/10 of the size of the features. For example, a particle with a diameter of 0.03 microns will damage features with a line width of 0.3 microns. During processing, movement of equipment components, device transfer, excessive vibration, and other non-conventional processes may cause particles to be generated within the semiconductor device.

In addition, the removal of contaminants within the equipment is a necessary condition to achieve vacuum performance of the equipment. When the vacuum chamber is evacuated, the vacuum chamber needs to be kept clean in order to reach the required pressure as soon as possible. Typical contaminants of vacuum systems include: the surfaces of residues generated in the production process of the vacuum system, grease, lubricant and the like on the screws and the sealing elements; application-related contaminants, such as process reaction products, dust, and particulates; environmental related contaminants such as condensed steam.

The normal operating state of the vacuum equipment is the operating state under the vacuum state, and if the vacuum state is broken, the air pressure in the vacuum cavity returns to the standard atmospheric pressure, so that the equipment or devices in the equipment can be in an unstable state. And after the cleaning process is finished, a series of operations such as vacuumizing are needed to enable the equipment to return to a normal working state, so that the production efficiency is greatly reduced.

The embodiment of the application provides a vacuum cavity which can realize in-situ cleaning in a vacuum environment.

Fig. 1 illustrates a vacuum chamber 1000 provided in an embodiment of the present application. The vacuum chamber 1000 is provided with a cleaning device 1100. The cleaning device 1100 is used for cleaning the vacuum chamber 1000. It should be understood that fig. 1 is only for illustration of the cleaning device 1100 disposed outside the vacuum chamber 1000, and is not limited to the configuration of the embodiment of the present application. For example, in other implementations, the cleaning device 1100 may also be configured inside the vacuum chamber 1000.

For example, the air pressure in the vacuum chamber may be measured by an air pressure sensor. The position of the air pressure sensor is not limited, and the air pressure in the vacuum cavity can be measured.

During cleaning, the vacuum chamber 1000 is in a vacuum environment, i.e., the air pressure within the vacuum chamber 1000 is less than normal atmospheric pressure.

Optionally, during cleaning, the air pressure within the vacuum chamber 1000 is less than or equal to a first threshold value, the first threshold value being less than or equal to 10 ³ pa。

The vacuum chamber 1000 is a vacuum chamber in a vacuum apparatus. A vacuum apparatus is understood to be an apparatus that operates in a vacuum environment. The normal working state in the vacuum chamber 1000 is a vacuum state.

The vacuum apparatus may be, for example, a semiconductor manufacturing apparatus or one or more vacuum modules in a semiconductor manufacturing apparatus. The vacuum chamber 1000 may be a vacuum chamber in a semiconductor manufacturing apparatus. For example, the vacuum chamber 1000 may be a transfer module for transferring wafers. For another example, the vacuum chamber 1000 may be a processing module for etching, thin film deposition, or other processing of a wafer. The embodiments of the present application are not limited in this regard. In one possible implementation, a semiconductor manufacturing apparatus includes the cleaning device 1100.

In the embodiment of the present application, cleaning of the vacuum chamber in the semiconductor manufacturing apparatus is merely described as an example, and the application scenario of the solution of the embodiment of the present application is not limited.

Illustratively, the cavity of the vacuum chamber 1000 may be cylindrical, cuboid, or cubic, among others.

A cuboid-shaped cavity or a cube-shaped cavity may also be referred to as a square cavity. The inner wall of the square cavity includes a top portion, a bottom portion opposite the top portion, and a sidewall between the top portion and the bottom portion.

The cylindrical cavity may also be referred to as a cylindrical cavity.

Further, the cylindrical cavity may be divided into a long cylindrical cavity and a thick cylindrical cavity. Illustratively, the long cylindrical cavity and the thick cylindrical cavity may be determined according to a ratio between a diameter and a height of the cylindrical cavity. The cylindrical cavity with the ratio between the diameter and the height being larger than or equal to the set value is a thick cylindrical cavity, and the cylindrical cavity with the ratio between the diameter and the height being smaller than the set value is a long cylindrical cavity. For example, the set value may be 1/4. It should be understood that the division criteria of the long cylindrical cavity and the thick cylindrical cavity are merely examples, and may be set according to the equipment or the production line or the production requirement, which is not limited in the embodiment of the present application.

As shown in fig. 1, the cleaning device 1100 includes an air supply assembly.

The gas supply assembly is used to provide a cleaning gas into the vacuum chamber 1000.

The vacuum chamber 1000 is also configured with an exhaust assembly.

The exhaust assembly is used to exhaust the gases within the vacuum chamber 1000.

Further, the cleaning device 1100 may further include a control module (not shown). The control module may be used to control the gas supply assembly to provide cleaning gas into the vacuum chamber 1000. Alternatively, the control module may be used to control the evacuation assembly to evacuate the gases from the vacuum chamber 1000.

The control module may include one or more control units. The control unit for controlling the gas supply assembly to supply the cleaning gas into the vacuum chamber 1000 and the control unit for controlling the gas exhaust assembly to exhaust the gas in the vacuum chamber 1000 may be the same control unit or may be different control units, which is not limited in this embodiment of the present application.

The exhaust assembly may or may not belong to the cleaning device 1100. For example, in the case where the vacuum chamber 1000 is a vacuum chamber in a semiconductor manufacturing apparatus, the exhaust assembly may be an exhaust assembly in a semiconductor manufacturing apparatus. The control module may or may not belong to the cleaning device 1100. For example, in the case where the vacuum chamber 1000 is a vacuum chamber in a semiconductor manufacturing apparatus, the control module may be a control module in the semiconductor manufacturing apparatus.

The air supply assembly includes at least one nozzle 1111 and an air supply line 1112.

The nozzle 1111 is used to spray cleaning gas into the vacuum chamber 1000, and the cleaning gas forms a spray gas stream having directivity when leaving the nozzle 1111. The air outlet of the nozzle 1111 is located inside the vacuum chamber 1000.

In other words, the cleaning gas is injected into the vacuum chamber 1000 through the nozzle 1111, and an injection gas flow having directivity is formed at the gas outlet of the nozzle 1111.

Specifically, the nozzle 1111 may be used to spray cleaning gas toward a region to be cleaned within the vacuum chamber 1000.

As previously described, during cleaning, the air pressure within the vacuum chamber 1000 is less than or equal to the first threshold value. Accordingly, the air pressure within the vacuum chamber during nozzle injection is less than or equal to the first threshold.

For example, the nozzle 1111 may spray the cleaning gas along the surface of the region to be cleaned. In other words, the direction of the jet air flow may be parallel to the plane in which the area to be cleaned lies. Alternatively, the nozzle 1111 may spray the cleaning gas against the surface of the area to be cleaned. In other words, the direction of the jet air flow may be perpendicular to the plane in which the area to be cleaned is located.

The area to be cleaned may be one area or a plurality of areas. In the case where the area to be cleaned includes a plurality of areas, the number of nozzles 1111 in the air supply assembly may be a plurality. The plurality of nozzles 1111 may be used to spray cleaning gas to the plurality of regions. One region may correspond to one or more nozzles 1111. The nozzle corresponding to one region refers to a nozzle for cleaning the region, i.e., a nozzle for spraying a cleaning gas to the region. For example, for one region, only one nozzle 1111 of the gas supply assembly sprays cleaning gas to the region. Alternatively, a plurality of nozzles 1111 in the gas supply assembly commonly spray cleaning gas to the region.

Illustratively, the area to be cleaned may include at least one of a target inner wall of the vacuum chamber 1000 or a surface of a target component within the vacuum chamber.

In other words, the cleaning device may be used to clean at least one of a target inner wall of the vacuum chamber 1000 or a target component within the vacuum chamber 1000.

The target interior walls may include one or more interior walls of the vacuum chamber 1000. In the embodiments of the present application, the top and bottom inside the vacuum chamber may also be understood as the inner walls of the vacuum chamber. The target component may be one component or multiple components. For example, the target component may include: a sensor, a valve or an actuator, etc.

The gas supply line 1112 is configured to connect the at least one nozzle 1111 with a cleaning gas source 1113.

The cleaning gas source 1113 supplies cleaning gas to the nozzle 1111 through a gas supply line 1112. The gas supply line 1112 provides a gas path between the at least one nozzle 1111 and a clean gas source 1113.

In other words, the gas in the cleaning gas source 1113 reaches the gas inlet of the nozzle 1111 through the gas supply line 1113, and then passes through the nozzle 1111 to form a directional jet gas flow, and is jetted from the gas outlet of the nozzle 1111 into the vacuum chamber 1000.

Illustratively, a valve 1114 may be provided in the supply line 1112. Valve 1114 is used to control the rate at which cleaning gas source 1113 provides cleaning gas to nozzle 1111. Alternatively, valve 1114 may be used to control whether cleaning gas source 1113 provides cleaning gas to nozzle 1111, i.e., to control the flow of cleaning gas into nozzle 1111 or to prevent the flow of cleaning gas into nozzle 1111. Illustratively, the valve 1114 may be controlled by a control module.

In one possible implementation, the clean gas source 1113 or the valve 1114 may be understood as belonging to a gas supply assembly.

Illustratively, the cleaning gas may be nitrogen or an inert gas, etc. For example, the cleaning gas may be high purity nitrogen, such as 7N nitrogen, i.e., nitrogen having a purity of 99.99999%. In the case where the purge gas is nitrogen, the purge gas source may be a compressed nitrogen cylinder.

The density of the nitrogen is similar to that of the air, so that the replacement efficiency can be improved.

It should be understood that the above is only an example, and the cleaning gas may be other gases that meet the cleanliness condition, such as clean air that meets the cleanliness condition. For example, clean air may be obtained by subjecting air to a filtration treatment. The specific cleanliness condition may be set according to an application scenario, which is not limited in the embodiment of the present application.

The exhaust assembly includes a vacuum pump 1121. The vacuum pump 1121 is used to pump out gas from the vacuum chamber 1000, that is, to perform an evacuation process on the vacuum chamber 1000 so that the gas pressure in the vacuum chamber 1000 reaches a desired gas pressure value.

Vacuum pumps refer to devices that draw gas from a vacuum chamber using mechanical, physical, chemical, or physicochemical schemes, and reduce the pressure of the gas within the vacuum chamber to achieve a vacuum.

Illustratively, the vacuum pump 1121 may be a mechanical pump.

Illustratively, the vacuum pump 1121 may be used to maintain the air pressure within the vacuum chamber 1000 less than or equal to a first threshold value. For example, the vacuum pump 1121 may be continuously operated to maintain the air pressure within the vacuum chamber 1000 less than or equal to the first threshold. The vacuum pump and the nozzle may be operated at the same time, for example, the vacuum pump may be maintained in an operating state while cleaning gas is injected through the nozzle.

Further, vacuum pump 1121 may be used to maintain the air pressure within vacuum chamber 1000 between the second threshold and the first threshold. Illustratively, the second threshold is less than or equal to 10 ^-1 pa。

Vacuum pump 1121 is connected to an air outlet of vacuum chamber 1000. Illustratively, the vacuum pump 1121 may be coupled to an air outlet of the vacuum chamber 1000 via an air outlet line.

Cleaning gas is injected into the vacuum chamber 1000 from the nozzle 1111, flows through the region to be cleaned, flows toward the gas outlet of the vacuum chamber 1000, and is discharged from the vacuum chamber 1000 by the vacuum pump 1121.

The air outlet of the vacuum chamber 1000 is provided on the inner wall of the vacuum chamber 1000. For example, the air outlet of the vacuum chamber 1000 may be provided at the bottom of the vacuum chamber 1000. The number of the air outlets of the vacuum chamber 1000 may be one or more.

Illustratively, the air outlet of the vacuum chamber 1000 may be an air outlet hole penetrating through the bottom of the vacuum chamber 1000.

It should be understood that fig. 1 is only a schematic diagram of a vacuum chamber provided in an embodiment of the present application, and the number of devices shown in the figure does not constitute any limitation. For example, in a practical application scenario, more nozzles may be included in the system, which is not limited in this embodiment of the present application. The positional relationship and the connection relationship between the devices, means, modules, etc. shown in fig. 1 do not constitute any limitation, and for example, in fig. 1, the nozzle is located at the top of the vacuum chamber 1000, and in other cases, the nozzle may be provided at the side of the vacuum chamber 1000. For another example, the vacuum chamber 1000 in fig. 1 has a cylindrical shape, and in other shapes, the vacuum chamber 1000 may have other shapes such as a square chamber. In particular implementations, those skilled in the art will appreciate that the vacuum chamber 1000 may also include other components necessary to achieve proper operation. Also, as will be appreciated by those skilled in the art, the vacuum chamber 1000 may also include components that perform other additional functions, as desired.

In the scheme of the embodiment of the application, the vacuum cavity in the cleaning process is in a vacuum state, so that in-situ cleaning in a vacuum environment is realized, and the reduction of production efficiency caused by the damage to the vacuum environment is avoided. The gas in the vacuum environment is thin, the gas mass is smaller, and therefore the resistance to the gas flow is also small. Meanwhile, the nozzle provides initial speed for the jet air flow, so that the jet air flow reaching the area to be cleaned has larger kinetic energy or larger momentum, and is favorable for replacing pollutants attached to the inner wall of the vacuum cavity or pollutants on the surfaces of components in the vacuum cavity, and the pollutant removal efficiency is improved. The scheme of this application embodiment not only can take very little size pollutant out of vacuum chamber, to the pollutant that has adhesive force and the pollutant of bigger size, the scheme of this application embodiment also can realize effective cleanness. In particular, the solution of the embodiments of the present application can effectively remove particles of different materials having a size in the range of 1nm to 10 μm, for example, metal impurities, inorganic impurities, organic impurities, or the like. In addition, the scheme of the embodiment of the application can also effectively clean gas pollutants such as water vapor, volatile organic compounds and the like. In particular, the water vapor and volatile organic concentrations may be reduced to the order of one part per billion moles per liter (PPB).

The shape of the air outlet of the nozzle may be square or circular, which is not limited in the embodiment of the present application.

For example, when the air outlet shape of the nozzle is square, the air outlet size of the nozzle may be understood as the length or width of the square, or the like.

For another example, when the shape of the air outlet of the nozzle is a circle, the air outlet size of the nozzle may be understood as a radius, a diameter, a circumference, an area, or the like of the circle.

Optionally, the at least one nozzle is configured to inject a cleaning gas toward a target area of the vacuum chamber 1000, and the at least one nozzle has an air outlet size associated with the target area. The length of the at least one nozzle is associated with the target area.

The target area may be the area to be cleaned in the foregoing.

In other words, the size of the nozzle corresponding to the target area may be adjusted according to the target area.

Taking as an example a first nozzle of the at least one nozzle. The first nozzle is used to spray a cleaning gas toward a first target area within the vacuum chamber 1000, and the gas outlet of the first nozzle is sized in relation to the first target area.

The length of the first nozzle is associated with the first target area.

The first target area may be any of the areas to be cleaned. The first nozzle is the nozzle corresponding to the first target area.

The distance that the jet stream can reach is determined by the length of the nozzle and the size of the outlet opening of the nozzle. The length of the nozzle refers to a distance from a connection point of the nozzle 1111 with the air supply line 1112 to an air outlet of the nozzle 1111, or the nozzle 1111 may be understood as a distance from an air inlet of the nozzle 1111 to an air outlet of the nozzle 1111. There is no bend between the inlet of the nozzle 1111 to the outlet of the nozzle 1111.

Specifically, the initial velocity of the jet stream at the outlet of the nozzle is related to the outlet size of the nozzle. The larger the size of the air outlet of the nozzle, the smaller the initial velocity of the jet air flow at the air outlet of the nozzle, and the closer the jet air flow can reach. The smaller the size of the air outlet of the nozzle, the greater the initial velocity of the jet air flow at the air outlet of the nozzle, and the further the jet air flow can reach. The nozzles provide directionality to the jet air flow so that the direction of the air flow is more focused. The longer the length of the nozzle, the higher the concentration of the jet stream and the further the jet stream can reach. The shorter the length of the nozzle, the lower the concentration of the jet stream and the closer the jet stream can reach.

Optionally, the size of the air outlet of the at least one nozzle is determined according to the distance between the nozzle and the target area.

In an exemplary embodiment, when the first target area is a first area, the air outlet size of the first nozzle is a first air outlet size, and when the first target area is a second area, the air outlet size of the first nozzle is a second air outlet size, the distance between the first area and the first nozzle is smaller than the distance between the second area and the first nozzle, and the first air outlet size is larger than the second air outlet size.

In other words, when the target area is far away, a nozzle having a small air outlet size may be employed. Nozzles with smaller outlet dimensions can provide a greater initial velocity for the jet stream, facilitating the jet stream to reach the target area. When the target area is close, a nozzle having a large air outlet size may be used. The nozzle with the larger air outlet size can provide smaller initial speed for the jet air flow, and the phenomenon that the momentum of the jet air flow is excessive when the jet air flow reaches a target area is avoided, so that the position of a part in the vacuum cavity is moved and even the part in the vacuum cavity is damaged.

Optionally, the length of the at least one nozzle is determined in dependence on the distance between the nozzle and the target area.

In an exemplary embodiment, when the first target area is a first area, the length of the first nozzle is a third length, and when the first target area is a second area, the length of the first nozzle is a fourth length, the distance between the first area and the first nozzle is smaller than the distance between the second area and the first nozzle, and the third length is smaller than the fourth length.

In other words, a nozzle having a longer length may be used when the target area is farther.

Alternatively, the length of the at least one nozzle may be determined in accordance with the extent of the target area.

Illustratively, when the first target area is the third area, the length of the first nozzle is a first length, and when the first target area is the fourth area, the length of the first nozzle is a second length, the extent of the first area is smaller than the extent of the second area, and the first length is greater than the second length.

In other words, a nozzle of a larger length may be used when the target area is smaller. The nozzle with larger length can enable the jet airflow to be more concentrated, is more beneficial to accurately controlling the coverage area of the jet airflow, can realize more comprehensive and more accurate coverage of a target area, is beneficial to realizing fixed-point cleaning, and avoids affecting other areas.

It should be noted that the above arrangements of various nozzle sizes are merely examples, and in practical applications, the nozzle sizes may be adjusted according to needs, and the above arrangements of various nozzle sizes may be used in combination, which is not limited in the embodiments of the present application. In addition, the coverage area of the jet air flow can be adjusted by adjusting the distance between the nozzle and the plane of the target area, so that the target area can be covered more comprehensively and accurately, and fixed-point cleaning can be realized.

Fig. 2 shows a schematic view of a coverage area of a nozzle according to an embodiment of the present application. As shown in FIG. 2, the distance between the nozzle and the first plane was 800mm, and the air outlet diameter of the nozzle was 3mm. The nozzle sprays cleaning gas against the first plane, namely the spraying direction of the nozzle is perpendicular to the first plane. As shown in fig. 2 (a), the cleaning effect obtained after the test was found to be 83% for zone 1#, 63% for zone 2#, and almost 0 for zone 3#, on the first plane. Cleaning effect is also understood as the removal rate of contaminants. Region 1# is a circular region of 3cm radius with the intersection of the ejection direction and the target region as the center of the circle in the first plane. Zone 2# is an annular zone of 7cm width adjacent to zone 1# in the first plane. Region 3# is the other region in the first plane than region 1# and region 2#, for example, region 3# may be an annular region of 10cm width adjacent to region 2# in the first plane of fig. 2. Regarding the area 2# as an area which can be covered by the air flow sprayed by the nozzle on the first plane, the angle between the direction of diffusion of the air flow sprayed by the nozzle and the direction of spraying of the air flow is calculated to be about 7.1 °, as shown in fig. 2 (b). According to the angle, the distance between the nozzle and the plane of the target area can be adjusted, so that the target area can be comprehensively and accurately covered.

Optionally, the air outlet of the nozzle is 1-10 mm in size.

Illustratively, the air outlet of the nozzle is circular in shape and has a diameter of 1-10 mm.

Alternatively, the length of the nozzle is 30 to 300mm.

In one possible implementation, the air supply assembly 1110 may include a plurality of nozzles 1111. The use of multiple nozzles 1111 enables more flexible adjustment of the coverage of the jet stream so that the coverage of the jet stream is more comprehensive.

Optionally, the air supply assembly 1110 includes one or more rows of nozzles, with the distance between adjacent nozzles of each row being 50-100 mm.

Illustratively, the number of nozzles may range from 2 to 200.

The number of nozzles may be determined according to the size of the vacuum chamber and the distance between adjacent nozzles of each row. For example, for a row of nozzles arranged in the height direction of the vacuum chamber, the height of the vacuum chamber may be 1.5m, the number of nozzles may be 15 if the distance between adjacent nozzles is 100mm, and the number of nozzles may be 30 if the distance between adjacent nozzles is 50 mm.

In the case where the air supply unit 1110 includes a plurality of nozzles 1111, the plurality of nozzles 1111 may be the same or different. The distance between adjacent nozzles may be the same or different.

Nozzles in the above size range are suitable for use in vacuum chambers of semiconductor manufacturing equipment.

Illustratively, nozzles in this size range are suitable for cube cavities having length, width and height of 1.5m, respectively. Nozzles in this size range are suitable for cylindrical cavities with diameters and heights of 1m and 1.2m, respectively. Nozzles in this size range are also suitable for smaller size vacuum chambers and will not be described in detail here. In practical applications, the diameter of the nozzle, the length of the nozzle, or the distance between adjacent nozzles may be adjusted according to the size of the vacuum chamber or the size of the area to be cleaned, so that the jet air flow covers the area to be cleaned.

The scheme of the nozzle 1111 will be exemplarily described below taking a target region including a vacuum chamber as an example.

Optionally, the gas supply assembly comprises a first set of nozzles comprising a row of nozzles, the first set of nozzles being adapted to spray cleaning gas along a first inner wall of the vacuum chamber.

The first inner wall is an example of the target area.

The first set of nozzles may be disposed on or adjacent to the first inner wall such that the first set of nozzles may spray cleaning gas along the first inner wall. For example, the spray direction of the first set of nozzles may be parallel to the first inner wall. Thus, the main flow direction of the cleaning gas ejected from the first group of nozzles is the direction parallel to the first inner wall.

The first set of nozzles may also be referred to as a single row of multiple nozzles.

For example, the first set of nozzles may be the same size. The first set of nozzles may be equally spaced.

Fig. 3 shows a schematic view of a single row of multiple nozzles. For example, (a) and (b) of fig. 3 show schematic diagrams of a single row of multiple nozzles at different viewing angles, respectively. The 7 nozzles in fig. 3 are uniformly distributed on the gas supply line at the same interval. The 7 nozzles may be fixed by a fixing member. As shown in fig. 3 (c), the distance between adjacent nozzles is 100mm, the length between the axis of the air supply pipeline and the air outlet of the nozzle is 140mm, the outer diameter of the air supply pipeline is 12mm, the length of the nozzle can be the distance from the outer wall of the air supply pipeline to the air outlet, namely 134mm, the air outlet of the nozzle is circular, the inner diameter of the air outlet of the nozzle is 2mm, and the outer diameter is 3.5mm. The size of the nozzle air outlet in the embodiment of the application may be the size of the inner diameter.

It should be noted that the single-row multi-nozzle in fig. 3 is merely an example, and the number, shape, length, nozzle outlet size, and the like of the nozzles in fig. 3 are not limited to the configuration of the embodiment of the present application. For example, fig. 3 only shows 7 nozzles connected to the air supply pipe, and in practical application, the number of nozzles may be other values, which is not limited in the embodiment of the present application. Further, the first set of nozzles is located on one side of the first inner wall.

For example, the first set of nozzles may be located on a first side of the first inner wall, and the first set of nozzles may spray cleaning gas along the first inner wall toward an opposite side of the first inner wall.

Thus, the whole coverage of the jet air flow to the first inner wall is facilitated, and the cleaning effect of the first inner wall is improved.

The first set of nozzles may be directed towards the outlet of the vacuum chamber.

It should be noted that, the air outlet of the nozzle facing the cavity does not limit the air outlet of the nozzle facing the cavity. As long as the air outlet of the cavity is located in the flow direction of the cleaning gas ejected from the nozzle, the air outlet of the nozzle toward the cavity can be regarded as.

For example, the first set of nozzles may be provided in the first inner wall at a side remote from the gas outlet of the vacuum chamber.

The clean gas flowing through the first inner wall can flow towards the gas outlet of the vacuum cavity, so that gas backflow or turbulence is avoided, and the cleaning effect is further affected.

In one possible implementation, the first set of nozzles is adapted for a cuboid cavity or a cuboid cavity.

Fig. 6 (a) shows a single-row multi-nozzle solution in a square cavity, and as shown in fig. 6 (a), the air outlet of the vacuum cavity is arranged at one corner of the bottom of the vacuum cavity. The first inner wall is a side wall of the square cavity adjacent to the air outlet of the vacuum cavity. A plurality of nozzles, namely a single row of multiple nozzles, are arranged on one side of the side wall, which is far away from the air outlet of the vacuum cavity, along the vertical direction at intervals. A single row of multiple nozzles sprays cleaning gas along the sidewall.

Therefore, the air outlet of the vacuum cavity is arranged at one corner of the bottom surface of the vacuum cavity, and the single-row multi-nozzle on one side, which is far away from the air outlet, of the side wall adjacent to the air outlet sprays cleaning gas along the side wall, so that the whole coverage of the side wall by the sprayed air flow can be realized, and the cleaning quality of the side wall is improved. Meanwhile, the single-row multi-nozzle faces the air outlet, the cleaning gas flowing through the side wall flows towards the air outlet of the vacuum cavity, and the jet air flow can be discharged out of the vacuum cavity through the air outlet of the vacuum cavity after reaching the opposite side from one side of the side wall, so that the influence on the cleaning effect caused by gas backflow or turbulence can be avoided.

It should be understood that the solution shown in fig. 6 (a) is only an example, and is not limited to the solution of the embodiment of the present application. For example, in fig. 6 (a), a single row of multiple nozzles provided on one inner wall is shown, but in other cases, a single row of multiple nozzles may be provided on more inner walls to achieve cleaning of the corresponding inner wall. The number of the first group of nozzles is not limited in the embodiment of the present application.

Optionally, the air supply assembly includes a second set of nozzles, the second set of nozzles includes two rows of nozzles arranged in an L-shape, the two rows of nozzles are respectively located at one side of a second inner wall of the vacuum chamber and one side of a third inner wall of the vacuum chamber, the two rows of nozzles are respectively used for spraying cleaning air along the second inner wall and the third inner wall, and the second set of nozzles face an air outlet of the vacuum chamber.

The second inner wall and the third inner wall are examples of the target area. The second inner wall and the third inner wall are adjacent inner walls. The nozzle on one side of the second inner wall is used for spraying the cleaning gas along the second inner wall, and the nozzle on one side of the third inner wall is used for spraying the cleaning gas along the third inner wall.

The two rows of nozzles of the second set of nozzles may be disposed on the second inner wall and the third inner wall, respectively. Or the two rows of nozzles of the second group of nozzles may be disposed adjacent to the second inner wall and adjacent to the third inner wall, respectively, so that the second group of nozzles may spray the cleaning gas along the second inner wall and the third inner wall. For example, the spray direction of the spray nozzle located at one side of the second inner wall may be parallel to the second inner wall. The spray direction of the nozzle located at one side of the third inner wall may be parallel to the third inner wall.

For example, a row of nozzles in the second set of nozzles is located on a first side of the second inner wall, and the flapper nozzle can spray cleaning gas along the second inner wall toward an opposite side of the first side of the second inner wall; the other row of nozzles in the second set of nozzles is located on a first side of the third inner wall, and the nozzles can spray cleaning gas along the third inner wall toward an opposite side of the first side of the third inner wall.

The second set of nozzles may be disposed, for example, on a side of the first inner wall and the third inner wall remote from the air outlet of the vacuum chamber.

The spray directions of the second set of nozzles may be mutually parallel. Alternatively, the axial directions of the second set of nozzles may be parallel to each other.

The second set of nozzles may also be referred to as an L-shaped multi-nozzle.

Illustratively, the dimensions of the second set of nozzles may be the same. The second set of nozzles may be equally spaced.

In one possible implementation, the second set of nozzles is adapted for a cuboid cavity or a cuboid cavity.

Fig. 6 (b) shows an L-shaped multi-nozzle solution in a square cavity, and as shown in fig. 6 (b), an air outlet of the vacuum cavity is provided at a corner of the bottom of the vacuum cavity. The second inner wall is the bottom of the vacuum chamber. A plurality of nozzles are arranged at intervals along the horizontal direction at one side of the bottom of the vacuum cavity, which is far away from the air outlet of the vacuum cavity. The third inner wall is a side wall of the vacuum cavity, and a plurality of nozzles are arranged on one side of the side wall, which is far away from the air outlet of the bottom of the vacuum cavity, along the vertical direction at intervals. The plurality of nozzles arranged at intervals in the horizontal direction and the plurality of nozzles arranged at intervals in the vertical direction are L-shaped. The L-shaped nozzles face the air outlet of the vacuum cavity, the spraying directions are parallel to each other, and cleaning gas is sprayed along the second inner wall and the third inner wall respectively.

Like this, the gas outlet of vacuum chamber sets up in the one corner of the bottom surface of vacuum chamber, and the L type that is located one side of keeping away from the gas outlet is many nozzles along lateral wall and bottom jet cleaning gas, can realize jetting air current to lateral wall and bottom's global coverage, improves lateral wall and bottom's cleaning performance. Meanwhile, the L-shaped multi-nozzle faces the air outlet, the cleaning gas flowing through the side wall and the bottom flows towards the air outlet of the vacuum cavity, and the jet air flow can be discharged out of the vacuum cavity through the air outlet of the vacuum cavity after reaching the opposite side from one side of the inner wall, so that the cleaning effect can be prevented from being influenced by gas backflow or turbulence.

It should be understood that fig. 6 (a) and (b) are only examples, and are not limited to the solution of the embodiment of the present application. For example, in practical applications, more nozzles may be provided for the inner wall that needs to be cleaned, which is not limited in the embodiments of the present application.

Optionally, the cavity of the vacuum cavity is cylindrical, the air supply assembly comprises a third group of nozzles, the third group of nozzles comprise two rows of nozzles which are arranged at intervals along the direction parallel to the axial direction of the vacuum cavity, the third group of nozzles are used for spraying cleaning air along the tangential direction of the fourth inner wall of the vacuum cavity, and the third group of nozzles are positioned at the opposite side of the air outlet of the vacuum cavity.

The fourth inner wall is an example of the target area. The fourth inner wall is a rotating surface of the cylindrical cavity.

The third group of nozzles may be disposed on or adjacent to the fourth inner wall so that the third group of nozzles may spray the cleaning gas in a tangential direction of the fourth inner wall. For example, the ejection direction of the third set of nozzles may be parallel to the tangential direction of the fourth inner wall. Thus, the main flow direction of the cleaning gas ejected from the third group of nozzles is the direction along the fourth inner wall surface.

For the cylindrical cavity, the tangential direction of the fourth inner wall includes two opposite directions, and accordingly, the two rows of nozzles in the third group of nozzles may spray cleaning gas in the two directions of the tangential line, respectively.

The third group of nozzles sprays cleaning gas along the fourth inner wall, so that the whole coverage of the spraying gas flow on the fourth inner wall is facilitated, and the cleaning quality of the fourth inner wall is improved.

The two rows of nozzles in the third group of nozzles can be positioned on the same straight line or can be positioned on two parallel straight lines which are closer to each other, so that the whole coverage of the fourth inner wall by the jet air flow is favorably ensured.

The jet air flows along the fourth inner wall until reaching the air outlet of the vacuum cavity at the opposite side of the third group of nozzles, and is discharged from the air outlet of the vacuum cavity, thereby being beneficial to avoiding the occurrence of air backflow or turbulence and further affecting the cleaning effect.

The third set of nozzles may also be referred to as a double row multiple nozzle.

Illustratively, the third set of nozzles may be the same size. The third set of nozzles may be equally spaced.

FIG. 4 shows a schematic diagram of a dual row multiple nozzle. For example, (a) and (b) of fig. 4 show schematic diagrams of a double row multi-nozzle at different viewing angles, respectively. The 10 nozzles of each row in fig. 4 are uniformly distributed on the gas supply line at the same interval. As shown in fig. 4 (c), the distance between adjacent nozzles is 60mm, the outer diameter of the air supply line portion provided with the nozzles is 20mm, the length of the nozzles can be the distance between the outer wall of the air supply line and the air outlet, i.e., 44/2-10=122 mm, the shape of the air outlet of the nozzles is circular, the inner diameter of the nozzles is 10mm, the outer diameter is 16mm, and the size of the air outlet of the nozzles can be understood as the inner diameter of the nozzles.

It should be noted that the double-row multi-nozzle in fig. 4 is only an example, and the number, shape, length, nozzle outlet size, etc. of the nozzles in fig. 4 are not limited to the configuration of the embodiment of the present application. For example, fig. 4 only shows 20 nozzles connected to the air supply pipe, and in practical application, the number of nozzles may be other values, which is not limited in the embodiment of the present application.

In one possible implementation, the third set of nozzles is adapted for use with a coarse cylindrical cavity.

Fig. 6 (c) shows a double-row multi-nozzle scheme in a coarse cylindrical cavity, and as shown in fig. 6 (c), two rows of nozzles, namely a third group of nozzles, are arranged on the inner wall of the vacuum cavity at intervals along the direction parallel to the axial direction of the vacuum cavity. The two rows of nozzles spray cleaning gas along two directions of tangential lines of the inner wall respectively. The air outlet of the vacuum chamber is located opposite the third set of nozzles.

The two rows of nozzles respectively spray cleaning gas along two directions of the tangent line of the inner wall, so that the whole coverage of the inner wall by the sprayed gas flow can be realized, and the cleaning quality of the inner wall is improved. Meanwhile, the air outlets are arranged on the opposite sides of the double-row multi-nozzle, the jet air flows along the inner wall, and the jet air can be discharged out of the vacuum cavity through the air outlets of the vacuum cavity after reaching the opposite sides, so that the influence on the cleaning effect caused by the occurrence of air backflow or turbulence can be avoided.

It should be understood that fig. 6 (c) is only an example, and is not limited to the solution of the embodiment of the present application.

Optionally, the gas supply assembly comprises a fourth set of nozzles comprising one or more nozzles located at the top of the vacuum chamber, the fourth set of nozzles being directed towards the gas outlet at the bottom of the vacuum chamber.

Illustratively, the fourth set of nozzles may be disposed in a middle region of the top of the vacuum chamber. The flow direction of the jet air stream of the fourth set of nozzles passes through the side wall of the vacuum chamber.

For example, the fourth set of nozzles may comprise one nozzle, which may be centrally located at the top of the vacuum chamber. In the case where the fourth group of nozzles includes only one nozzle, the fourth group of nozzles may also be referred to as a single nozzle.

Fig. 5 shows a schematic view of a single nozzle. For example, (a) and (b) of fig. 5 show schematic diagrams of a single nozzle at different viewing angles, respectively. As shown in fig. 5 (c), the length of the nozzle is 140mm, the shape of the air outlet of the nozzle is circular, the inner diameter of the nozzle is 2.0mm, the outer diameter is 3.5mm, and the size of the air outlet of the nozzle can be understood as the inner diameter of the nozzle.

The single nozzle in fig. 5 is merely an example, and the shape, length, nozzle outlet size, and the like of the nozzle in fig. 5 are not limited to the configuration of the embodiment of the present application.

For another example, the fourth set of nozzles may include a plurality of nozzles, and the center of the nozzle array formed by the plurality of nozzles may be the center of the top of the vacuum chamber.

In one possible implementation, the fourth set of nozzles is adapted to cavities of elongated shape, i.e. cavities with a small ratio between the bottom dimension and the height. For example, the fourth set of nozzles may be adapted for use with a long cylindrical cavity. In this way, the cleaning gas sprayed from the fourth set of nozzles located at the top more easily covers the side walls of the vacuum chamber.

The cleaning gas flowing through the side wall can flow towards the gas outlet of the vacuum cavity, thereby being beneficial to avoiding gas backflow or turbulent flow and further influencing the cleaning effect.

As shown in fig. 6 (d), a single nozzle scheme in a long cylindrical cavity is shown, as shown in fig. 6 (d), a single nozzle is provided at the center of the top of the vacuum cavity, and the air outlet of the vacuum cavity is provided at the center of the bottom of the vacuum cavity, i.e., opposite to the single nozzle.

Therefore, the side wall of the vacuum cavity can be better covered by the air flow sprayed by the single nozzle at the center of the top of the vacuum cavity, and the cleaning quality of the side wall is improved. Meanwhile, the single nozzle faces the air outlet, the cleaning gas flowing through the side wall flows towards the air outlet of the vacuum cavity, and the cleaning gas is discharged out of the vacuum cavity through the air outlet of the vacuum cavity, so that the influence on the cleaning effect caused by gas backflow or turbulence can be avoided.

The embodiment of the application also provides a cleaning method which can be used for cleaning in situ in a vacuum environment.

Fig. 7 shows a schematic diagram of a cleaning method 400 according to an embodiment of the present application. Illustratively, the method 400 may be performed by the vacuum chamber 1000 shown in FIG. 1.

Method 400 includes steps 410 through 420, and method 400 is described below.

410, performing exhaust treatment on the vacuum cavity.

420, injecting the cleaning gas into the vacuum chamber until the air pressure in the vacuum chamber reaches a first threshold value under the condition that the air pressure in the vacuum chamber is low to a second threshold value, wherein the second threshold value is smaller than the first threshold value, and the first threshold value is smaller than or equal to 10 ³ Pa。

Further, the method 400 may further comprise a step 430 (not shown).

430, repeating steps 410 and 420.

The air pressure in the vacuum chamber is as low as the second threshold, which is understood to be less than or equal to the second threshold. The air pressure in the vacuum chamber reaches a first threshold, which is understood to be greater than or equal to the first threshold.

The method 400 can also be understood as: carrying out exhaust treatment on the vacuum cavity; injecting a cleaning gas into the vacuum chamber when the air pressure in the vacuum chamber is low to a second threshold value; and when the air pressure in the vacuum cavity rises to the first threshold value, continuing to exhaust the vacuum cavity until the air pressure in the vacuum cavity is smaller than or equal to the second threshold value again.

Further, when the air pressure in the vacuum chamber rises to the first threshold value, continuing to perform exhaust treatment on the vacuum chamber until the air pressure in the vacuum chamber is less than or equal to the second threshold value again, and further comprising: when the air pressure in the vacuum cavity is smaller than or equal to the second threshold value again, jetting cleaning gas into the vacuum cavity again to enable the air pressure in the vacuum cavity to rise to the first threshold value again; the exhaust treatment and the injection of the cleaning gas are repeated.

In method 400, the vacuum chamber is in a sealed state. Illustratively, the chamber door of the vacuum chamber may be closed prior to performing the method 400 to place the vacuum chamber in a sealed state.

Illustratively, the method 400 may be performed by the system shown in FIG. 1. Before the method 400 is performed, i.e., before the cleaning process begins, the valve is in a closed state.

In step 410, the vacuum chamber may be evacuated by a vacuum pump. The vacuum pump is in an operating state to reduce the pressure of the air in the vacuum chamber to a second threshold. For example, the vacuum pump may be the vacuum pump 1121 of FIG. 1. The vacuum pump 1121 may be controlled by a control module, and accordingly, step 410 may be where the control module controls the vacuum pump 1121 to perform an exhaust treatment on the vacuum chamber 1000.

In step 420, a cleaning gas may be injected into the vacuum chamber from at least one nozzle 1111 of fig. 1.

The injection process of the cleaning gas may also be controlled by the control module. For example, step 420 may be where the control module controls the valve to open, the cleaning gas is supplied from the cleaning gas source to the nozzle, and the cleaning gas is injected from the nozzle 1111 into the vacuum chamber.

Optionally, the cleaning gas comprises nitrogen or an inert gas.

Alternatively, the cleaning gas may be other gases described above, and the description thereof is omitted to avoid repetition.

In the process of exhausting the vacuum cavity, the air pressure in the vacuum cavity is reduced. In the case where the air pressure in the vacuum chamber is reduced to the second threshold value, a cleaning gas is injected into the vacuum chamber so that the air pressure in the vacuum chamber is increased. In the case that the air pressure in the vacuum chamber reaches the first threshold, the jetting speed of the cleaning gas or the power of the vacuum pump is adjusted so that the air pressure in the vacuum chamber is reduced until the air pressure is reduced to the second threshold, the jetting speed of the cleaning gas or the power of the vacuum pump is adjusted so that the air pressure in the vacuum chamber is increased until the air pressure reaches the first threshold, and the process is repeated.

In one possible implementation, in step 420, the vacuum pump is still in operation during the injection of the cleaning gas into the vacuum chamber, and the vacuum chamber is exhausted. Alternatively, step 410 is still performed during the execution of step 420. In other words, the vacuum pump may be in operation throughout the execution of the method 400. During operation of the vacuum pump, the power of the vacuum pump can be adjusted as required. For example, when the air pressure in the vacuum cavity is low to a second threshold value, cleaning gas is sprayed to the vacuum cavity, and the power of the vacuum pump can be reduced in the process, so that the exhaust effect is reduced, and the air pressure in the vacuum cavity is increased; when the air pressure in the vacuum chamber reaches a first threshold, the power of the vacuum pump can be increased to increase the exhaust effect, so that the air pressure in the vacuum chamber is reduced. Or, the power of the vacuum pump may be kept unchanged, as long as the air pressure in the vacuum chamber is in a trend of increasing after the air pressure in the vacuum chamber is low to the second threshold value, and the air pressure in the vacuum chamber is in a trend of decreasing after the air pressure in the vacuum chamber reaches the first threshold value.

Alternatively, the vacuum pump may be turned off during the injection of the cleaning gas into the vacuum chamber, and the vacuum pump may be turned back on when the air pressure in the vacuum chamber reaches the first threshold.

In one possible implementation, a cleaning gas may be injected into the vacuum chamber in step 410, as long as the pressure within the vacuum chamber is guaranteed to be in a decreasing trend. In other words, during the execution of the method 400, the cleaning gas may be continuously injected into the vacuum chamber. The injection speed of the cleaning gas can be adjusted as needed.

In another possible implementation, the cleaning gas is not injected into the vacuum chamber in step 410, i.e., the injection of the cleaning gas is started only after the air pressure in the vacuum chamber is low to the second threshold value, and the injection of the cleaning gas into the vacuum chamber is stopped after the air pressure in the vacuum chamber reaches the first threshold value.

Illustratively, the method 400 may be implemented as follows: carrying out exhaust treatment on the vacuum cavity by a vacuum pump, wherein cleaning gas is not sprayed to the vacuum cavity in the process; and under the condition that the air pressure in the vacuum cavity is low to a second threshold value, jetting the cleaning gas into the vacuum cavity until the air pressure in the vacuum cavity reaches the first threshold value, stopping jetting the cleaning gas into the vacuum cavity, and continuously exhausting the vacuum cavity in the process. In this way, in the process of injecting the cleaning gas into the vacuum chamber, the air pressure in the vacuum chamber is gradually increased until the air pressure in the vacuum chamber reaches the first threshold value, after stopping injecting the cleaning gas into the vacuum chamber, the air pressure in the vacuum chamber is gradually reduced, and after the air pressure in the vacuum chamber is reduced again to the second threshold value, the cleaning gas is injected into the vacuum chamber, and the above-mentioned processes are repeated.

Illustratively, the method 400 may be performed by the system shown in FIG. 1. If the pressure within the vacuum chamber is at the normal atmospheric pressure prior to performing the method 400, the vacuum pump may be operated for 60-3600 seconds to reduce the pressure within the vacuum chamber to the second threshold value. Under the condition that the air pressure in the vacuum cavity is reduced to a second threshold value, the valve is opened, the nozzle sprays clean air into the vacuum cavity until the air pressure in the vacuum cavity is increased to the first threshold value, and the valve is closed. For example, the valve is opened for 3-30 seconds until the air pressure in the vacuum chamber rises to a first threshold value, and the valve is closed. After the valve is closed, the vacuum pump continues to operate for 3-6000s to reduce the pressure in the vacuum chamber to a second threshold.

It should be understood that the above time is only a reference example, and is not limited to the solution of the embodiment of the present application.

In the embodiment of the application, the air pressure in the vacuum cavity during the cleaning process does not exceed 10 ³ Pa, namely the vacuum cavity is always in a vacuum state in the cleaning process, which is beneficial to reducing the time required by cleaning and improving the cleaning efficiency, thereby saving the cost. In addition, in the cleaning process, the vacuum cavity is in a vacuum state, so that the stable operation of the vacuum equipment can be ensured. The vacuum cavity in the scheme of the embodiment of the application can enter the standby state after cleaning is completed, namely, the scheme of the embodiment of the application can clean the vacuum cavity and parts in the vacuum cavity under the vacuum environment, and in-situ dust removal is realized.

Optionally, the second threshold is less than or equal to 10 ^-1 Pa。

Optionally, the second threshold is 10 ^-1 Pa, a first threshold of 10 ³ Pa。

Alternatively, the number of cycles ranges from 3 to 200.

In the case where the air pressure in the vacuum chamber is lowered from the first threshold value to the second threshold value, the injection of the cleaning gas into the vacuum chamber is repeated until the air pressure in the vacuum chamber is raised to the first threshold value, the number of times of repetition ranging from 3 times to 200 times.

Optionally, the method 400 further comprises step 440 (not shown).

440, in case the cleanliness in the vacuum chamber does not meet the preset condition, steps 410 to 430 are repeatedly performed.

Further, in the case that the cleanliness in the vacuum chamber satisfies the preset condition, the current cleaning flow may be ended.

Illustratively, when the method 400 is applied to semiconductor device cleaning, the cleanliness within the vacuum chamber may be determined by the condition of contaminants on the wafer. For example, the condition of the contaminants on the wafer may include at least one of a number or a size of particles on the wafer.

Illustratively, after steps 410-430 are performed, the wafer is transferred from the cassette into the vacuum chamber by the mechanical transfer assembly and then back into the cassette; particles and amounts on the wafer are detected by a wafer defect detection apparatus. And ending the cleaning flow when the number and the size of the particles on the wafer meet the preset conditions. In case the number and size of the particles on the wafer do not meet the preset conditions, steps 410 to 430 are repeatedly performed. The wafers transferred from the cassette into the vacuum chamber may be clean wafers. In the process that the wafer is conveyed from the wafer box to the vacuum cavity and then conveyed back to the wafer box, particles in the vacuum cavity can be attached to the wafer, and the conditions of the particles on the wafer can reflect the cleanliness in the vacuum cavity. In the embodiment of the present application, the condition of the particles on the wafer may be used as a criterion for determining the cleanliness of the vacuum chamber.

Wherein, the preset condition can be set according to the requirement. The preset conditions may also be different for different scenarios.

For example, the predetermined condition may be that the number of particles on the wafer is less than or equal to the first predetermined number.

For another example, the predetermined condition may be that the size of the particles on the wafer is less than or equal to the first predetermined size.

For another example, the preset condition may be that the size of the particles on the wafer is smaller than or equal to a second preset size, and the number of the particles on the wafer is smaller than or equal to a second preset number.

For another example, the predetermined condition may be that the number of particles on the wafer that are greater than or equal to the first particle size is less than or equal to a third predetermined number.

It should be understood that the foregoing is merely exemplary and is not intended to limit the scope of the embodiments of the present application.

After the cleaning process is finished, the operation of the vacuum pump can be kept, the cavity door of the vacuum cavity is kept closed, and the valve is closed, so that the vacuum equipment can directly enter a standby state.

To facilitate understanding and description of aspects of embodiments of the present application, the method 400 in embodiments of the present application is described below in conjunction with five examples (example 1, example 2, example 3, example 4, and example 5). The five examples may be performed by the apparatus 100 shown in fig. 1. In the following five examples, contamination in the vacuum chamber is exemplified as particles.

Example 1

The vacuum cavity is cylindrical, has a diameter of 300mm and a length of 900mm. The diameter of the nozzles is 3mm, the length of the nozzles is 140mm, and the number of the nozzles is 1. The distance between the nozzle and the wafer was 800mm, and the jet direction of the nozzle was perpendicular to the plane of the wafer. For example, the nozzle scheme may employ a single nozzle scheme as shown in fig. 6 (d), and the wafer may be arranged in a horizontal posture at the center of the vacuum chamber. In example 1, the particles on the wafer were standard silver nanoparticles before the cleaning process began. The density of particles on the wafer was 3927 particles per square centimeter, and the size of the particles was 100 nm.+ -. 20nm.

The cleaning process comprises the following steps:

s1, under the condition that the vacuum cavity is in a sealed state, keeping a valve closed, and exhausting the vacuum cavity by a vacuum pump to reduce the air pressure in the vacuum cavity to 10 ^-1 Pa。

Illustratively, step S1 may include: the vacuum equipment closes a vacuum cavity door, and the vacuum cavity enters a sealing state; the vacuum pump started to operate for 80 seconds, and the air pressure in the vacuum chamber was controlled to be equal to the standard air pressure (10 ⁵ Pa) down to 10 ^-1 Pa。

It should be understood that the operation time of the vacuum pump in step S1 is only a reference example, and is not limited to the scheme of the embodiment of the present application. For example, before cleaning begins The vacuum chamber may already be in a vacuum state, the air pressure in the vacuum chamber being less than the normal atmospheric pressure, in which case the vacuum pump may drop the air pressure in the vacuum chamber to 10 in a shorter time ^-1 Pa. For another example, when the volume of the vacuum chamber is small, the vacuum pump can reduce the air pressure in the vacuum chamber to 10 in a shorter time ^-1 Pa。

Before the cleaning process is started, the connection of the nozzle, the air supply pipeline, the valve and the nitrogen cylinder is confirmed to be good, and the valve is kept closed.

S2, the vacuum pump keeps running, the valve is opened, the nozzle sprays nitrogen into the vacuum cavity, and the air pressure in the vacuum cavity is increased to 10 ³ Pa。

For example, the valve is opened, the nozzle sprays nitrogen gas into the vacuum chamber for 3 seconds, and the air pressure in the vacuum chamber is increased to 10 ³ Pa。

It should be understood that the above durations are merely reference examples, which are not limited by the embodiments of the present application.

S3, closing the valve, and keeping the vacuum pump to operate to ensure that the air pressure in the vacuum cavity is changed from 10 ³ Pa is reduced to 10 ^-1 Pa。

For example, the vacuum pump may be kept in operation for 60 seconds to allow the air pressure in the vacuum chamber to be changed from 10 ³ Pa is reduced to 10 ^-1 Pa。

It should be understood that the operation time of the vacuum pump in step S3 is only referred to as an example, and the embodiment of the present application is not limited thereto.

S4, repeating the steps S1 to S2, wherein the repetition number is 100.

It should be understood that the above repetition numbers are only reference examples, and do not limit the solution of the embodiments of the present application.

After step S4 is performed, the wafer is transferred out of the wafer cassette outside the vacuum chamber by a mechanical transfer system. And detecting the wafer box by using wafer defect detection equipment to obtain the density and the size of the particles on the wafer. The density of the particles on the wafer obtained after the detection is 192 particles per square centimeter, and the size of the particles is 100nm plus or minus 20nm. It can be seen that the density of the particles was reduced by 95.2% after cleaning using the protocol of the examples of the present application.

S5, judging whether the cleanliness of the vacuum cavity meets preset conditions. And under the condition that the cleanliness of the vacuum cavity meets the preset condition, ending the cleaning process. And repeating the steps S1 to S4 under the condition that the cleanliness of the vacuum cavity does not meet the preset condition.

The method for determining the cleanliness of the vacuum chamber can refer to the related description of step 440 in the method 400, which is not repeated here.

After the cleaning process is finished, the vacuum pump can continue to operate, the vacuum cavity door is kept in a closed state, the valve is kept in a closed state, and the vacuum equipment can enter a standby state.

Example 2

The vacuum cavity is cylindrical, has a diameter of 300mm and a length of 900mm. The diameter of the nozzles is 3mm, the length of the nozzles is 140mm, and the number of the nozzles is 1. The distance between the nozzle and the wafer was 800mm, and the jet direction of the nozzle was perpendicular to the plane of the wafer. For example, the nozzle scheme may employ a single nozzle scheme as shown in fig. 6 (d), and the wafer may be arranged in a horizontal posture at the center of the vacuum chamber. In example 2, the particles on the wafer were standard silver nanoparticles before the cleaning process began. The density of the particles on the wafer was 4271 particles per square centimeter, and the size of the particles was 100 nm.+ -.20 nm.

The cleaning process comprises the following steps:

Illustratively, step S2 may include: the vacuum equipment closes a vacuum cavity door, and the vacuum cavity enters a sealing state; the vacuum pump started to operate for 80 seconds, and the air pressure in the vacuum chamber was controlled to be equal to the standard air pressure (10 ⁵ Pa) down to 10 ^-1 Pa。

It should be understood that the operation time of the vacuum pump in step S2 is only a reference example, and is not limited to the scheme of the embodiment of the present application. For example, the vacuum chamber may be already in a vacuum state before cleaning is started, the air pressure in the vacuum chamber is less than the normal atmospheric pressure, in which case the vacuum pump may cause the vacuum chamber to be operated in a shorter timeThe internal air pressure is reduced to 10 ^-1 Pa. For another example, when the volume of the vacuum chamber is small, the vacuum pump can reduce the air pressure in the vacuum chamber to 10 in a shorter time ^-1 Pa。

It should be understood that the operation time of the vacuum pump in step S4 is only referred to as an example, and the embodiment of the present application is not limited thereto.

S4, repeating the steps S1 to S2, wherein the repetition number is 30.

After step S4 is performed, the wafer is transferred out of the wafer cassette outside the vacuum chamber by a mechanical transfer system. And detecting the wafer box by using wafer defect detection equipment to obtain the density and the size of the particles on the wafer. The density of the particles on the wafer obtained after detection is 422 per square centimeter, and the size of the particles is 100nm plus or minus 20nm. It can be seen that the density of the particles was reduced by 90.2% after cleaning using the protocol of the examples of the present application.

The main difference between the cleaning flow of example 2 and example 1 is that the number of repetitions in step S5 in example 2 is smaller than that in step S5 in example 1. From the detection results, the cleaning effect can be better obtained by the repetition times of 30 times and the repetition times of 100 times. And the more the circulation times in the cleaning process are, the higher the cleanliness in the vacuum cavity is, and the better the cleaning effect is.

Example 3

The vacuum cavity is cylindrical, has a diameter of 300mm and a length of 900mm. The diameter of the nozzles is 3mm, the length of the nozzles is 140mm, and the number of the nozzles is 1. The distance between the nozzle and the wafer was 800mm, and the jet direction of the nozzle was perpendicular to the plane of the wafer. For example, the nozzle scheme may employ a single nozzle scheme as shown in fig. 6 (d), and the wafer may be arranged in a horizontal posture at the center of the vacuum chamber. In example 3, the particles on the wafer were standard silver nanoparticles before the cleaning process began. The density of particles on the wafer was 4093 particles per square centimeter, and the size of the particles was 500 nm.+ -.35 nm.

The cleaning process comprises the following steps:

It should be understood that the operation time of the vacuum pump in step S1 is only a reference example, and is not described in detailThe embodiments of the present application are defined in terms of arrangement. For example, the vacuum chamber may be already in a vacuum state before cleaning is started, the air pressure in the vacuum chamber is less than the standard atmospheric pressure, in which case the vacuum pump may decrease the air pressure in the vacuum chamber to 10 in a shorter time ^-1 Pa. For another example, when the volume of the vacuum chamber is small, the vacuum pump can reduce the air pressure in the vacuum chamber to 10 in a shorter time ^-1 Pa。

S4, repeating the steps S1 to S2, wherein the repetition number is 30.

After step S4 is performed, the wafer is transferred out of the wafer cassette outside the vacuum chamber by a mechanical transfer system. And detecting the wafer box by using wafer defect detection equipment to obtain the density and the size of the particles on the wafer. The density of particles on the wafer after inspection was 692 per square centimeter, and the size of the particles was 500 nm.+ -.35 nm. It can be seen that the density of the particles was reduced by 83.1% after cleaning using the protocol of the examples of the present application.

The main difference between the cleaning procedures of example 3 and example 2 is that the size of the particles in example 2 is different from the size of the particles in example 3. From the detection results, the solution of the embodiment of the application can effectively clean both large-sized pollutants and small-sized pollutants.

Example 4

The cavity of the vacuum cavity is cylindrical, the diameter is 800mm, and the length is 1200mm. The diameter of the nozzles is 3mm, the length of the nozzles is 140mm, the number of the nozzles is 24, and the distance between two adjacent nozzles is 100nm. The distance between the nozzle and the wafer was 800mm, and the spray direction of the nozzle was parallel to the plane of the wafer. In example 4, the particles on the wafer were standard silver nanoparticles before the cleaning process began. The density of the particles on the wafer was 14822 particles per square centimeter, and the size of the particles was 500 nm.+ -.35 nm.

The cleaning process comprises the following steps:

Illustratively, step S1 may include: the vacuum equipment closes a vacuum cavity door, and the vacuum cavity enters a sealing state; the vacuum pump started to operate for 120s, and the air pressure in the vacuum chamber was controlled to be equal to the standard air pressure (10 ⁵ Pa) down to 10 ^-1 Pa。

It should be understood that the number of the devices,the operation time of the vacuum pump in step S1 is only a reference example, and is not limited to the scheme of the embodiment of the present application. For example, the vacuum chamber may be already in a vacuum state before cleaning is started, the air pressure in the vacuum chamber is less than the standard atmospheric pressure, in which case the vacuum pump may decrease the air pressure in the vacuum chamber to 10 in a shorter time ^-1 Pa. For another example, when the volume of the vacuum chamber is small, the vacuum pump can reduce the air pressure in the vacuum chamber to 10 in a shorter time ^-1 Pa。

For example, the valve is opened, the nozzle sprays nitrogen gas into the vacuum chamber for 12 seconds, and the air pressure in the vacuum chamber is increased to 10 ³ Pa。

For example, the vacuum pump may be kept on for 80 seconds to allow the air pressure in the vacuum chamber to be changed from 10 ³ Pa is reduced to 10 ^-1 Pa。

S4, repeating the steps S1 to S2, wherein the repetition number is 100.

After step S4 is performed, the wafer is transferred out of the wafer cassette outside the vacuum chamber by a mechanical transfer system. And detecting the wafer box by using wafer defect detection equipment to obtain the density and the size of the particles on the wafer. The density of the particles on the wafer obtained after the detection was 221 particles per square centimeter, and the size of the particles was 500 nm.+ -.35 nm. It can be seen that the density of the particles was reduced by 98.5% after cleaning using the protocol of the examples of the present application.

Example 5

The cavity of the vacuum cavity is cube-shaped, the length is 1500mm, the width is 1500mm, and the height is 1500mm. The diameter of the nozzles is 3mm, the length of the nozzles is 140mm, the number of the nozzles is 120, and the distance between two adjacent nozzles is 100nm. The distance between the nozzle and the wafer was 800mm, and the spray direction of the nozzle was parallel to the plane of the wafer. In example 5, the particles on the wafer were standard silver nanoparticles before the cleaning process began. The density of particles on the wafer was 7488 particles per square centimeter, and the size of the particles was 500 nm.+ -.35 nm.

The cleaning process comprises the following steps:

It should be understood that the operation time of the vacuum pump in step S1 is only a reference example, and is not limited to the scheme of the embodiment of the present application. For example, the vacuum chamber may be already in a vacuum state before cleaning begins, and the air pressure in the vacuum chamber is less than the targetQuasi-atmospheric pressure, in which case the vacuum pump can reduce the pressure in the vacuum chamber to 10 in a shorter time ^-1 Pa. For another example, when the volume of the vacuum chamber is small, the vacuum pump can reduce the air pressure in the vacuum chamber to 10 in a shorter time ^-1 Pa。

S4, repeating the steps S1 to S2, wherein the repetition number is 100.

After step S4 is performed, the wafer is transferred out of the wafer cassette outside the vacuum chamber by a mechanical transfer system. And detecting the wafer box by using wafer defect detection equipment to obtain the density and the size of the particles on the wafer. The density of the particles on the wafer obtained after the detection is 1048 particles per square centimeter, and the size of the particles is 500nm + -35 nm. It can be seen that the density of the particles was reduced by 86% after cleaning using the protocol of the examples of the present application.

The embodiment of the application also provides semiconductor manufacturing equipment, which comprises the vacuum cavity.

In one possible implementation, the semiconductor manufacturing apparatus further comprises a control module that can be used to control the vacuum chamber to perform the foregoing cleaning method.

The control module may be integrated into the vacuum chamber or the control module may be independent of the vacuum chamber. The embodiments of the present application are not limited in this regard.

It should be understood that the term "and/or" is merely an association relationship describing the associated object, and means that three relationships may exist, for example, a and/or B may mean: there are three cases, a alone, a and B together, and B alone, wherein a, B may be singular or plural. In addition, the character "/" herein generally indicates that the associated object is an "or" relationship, but may also indicate an "and/or" relationship, and may be understood by referring to the context.

In the present application, "at least one" means one or more, and "a plurality" means two or more. "at least one of" or the like means any combination of these items, including any combination of single item(s) or plural items(s). For example, at least one (one) of a, b, or c may represent: a, b, c, a-b, a-c, b-c, or a-b-c, wherein a, b, c may be single or plural.

In the embodiment of the present application, prefix words such as "first" and "second" are used merely to distinguish different description objects, and there is no limitation on the location, order, priority, number, content, or the like of the described objects.

It should be understood that, in various embodiments of the present application, the sequence numbers of the foregoing processes do not mean the order of execution, and the order of execution of the processes should be determined by the functions and internal logic thereof, and should not constitute any limitation on the implementation process of the embodiments of the present application.

Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.

It will be clear to those skilled in the art that, for convenience and brevity of description, specific working procedures of the above-described systems, apparatuses and units may refer to corresponding procedures in the foregoing method embodiments, and are not repeated herein.

In the several embodiments provided in this application, it should be understood that the disclosed systems, devices, and methods may be implemented in other manners. For example, the apparatus embodiments described above are merely illustrative, e.g., the division of the units is merely a logical function division, and there may be additional divisions when actually implemented, e.g., multiple units or components may be combined or integrated into another system, or some features may be omitted or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be an indirect coupling or communication connection via some interfaces, devices or units, which may be in electrical, mechanical or other form.

The units described as separate units may or may not be physically separate, and units shown as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

In addition, each functional unit in each embodiment of the present application may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit.

The foregoing is merely specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the present application, and the changes and substitutions are intended to be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A vacuum chamber is characterized in that,

the air outlet of the vacuum cavity is connected with a vacuum pump, and the vacuum pump is used for carrying out exhaust treatment on the vacuum cavity;

the vacuum chamber is internally provided with a gas supply assembly, the gas supply assembly comprises a gas supply pipeline and at least one nozzle, the gas supply pipeline is used for connecting the at least one nozzle and a cleaning gas source, and the nozzle is used for spraying the cleaning gas into the vacuum chamber;

wherein the gas pressure in the vacuum chamber during the jetting of the cleaning gas is less than or equal to a first threshold value, the first threshold value being less than or equal to 10 ³ Pa, the cleaning gas forms a jet of gas having directionality when exiting the nozzle.

2. The vacuum chamber of claim 1, wherein the at least one nozzle comprises one or more rows of nozzles, wherein the spacing between adjacent nozzles of each row is 50-100 mm.

3. The vacuum chamber of claim 1 or 2, wherein the chamber body of the vacuum chamber is in a cube or cuboid shape, the at least one nozzle comprises a first set of nozzles comprising a row of nozzles located on one side of a first inner wall of the vacuum chamber, the first set of nozzles being for jetting the cleaning gas along the first inner wall, the first set of nozzles being directed towards an outlet of the vacuum chamber.

4. The vacuum chamber according to claim 1 or 2, wherein the cavity of the vacuum chamber is in a cube or cuboid shape, the at least one nozzle comprises a second set of nozzles comprising two rows of nozzles arranged in an L-shape, the two rows of nozzles being located on one side of a second inner wall of the vacuum chamber and one side of a third inner wall of the vacuum chamber, respectively, the two rows of nozzles being for jetting the cleaning gas along the second inner wall and the third inner wall, respectively, the second set of nozzles being directed towards the gas outlet of the vacuum chamber.

5. The vacuum chamber according to claim 1 or 2, wherein the chamber body of the vacuum chamber is cylindrical, the at least one nozzle comprises a third group of nozzles, the third group of nozzles comprises two rows of nozzles which are arranged at intervals along a direction parallel to the axial direction of the vacuum chamber, the third group of nozzles is used for spraying the cleaning gas along the tangential direction of the fourth inner wall of the vacuum chamber, and the third group of nozzles is positioned at the opposite side of the air outlet of the vacuum chamber.

6. The vacuum chamber of claim 1 or 2, wherein the at least one nozzle comprises a fourth set of nozzles comprising one or more nozzles at a top of the vacuum chamber, the fourth set of nozzles being directed toward an air outlet at a bottom of the vacuum chamber.

7. The vacuum chamber of any one of claims 1 to 6, wherein the at least one nozzle is configured to inject a cleaning gas into a target area within the vacuum chamber, and wherein the size of the gas outlet of the at least one nozzle is determined based on a distance between the nozzle and the target area.

8. The vacuum chamber of claim 7, wherein the length of the at least one nozzle is determined based on the extent of the target area, the length of the at least one nozzle being inversely related to the size of the extent of the target area.

9. Vacuum chamber according to any of claims 1-8, characterized in that the air outlet size of the at least one nozzle is 1-10 mm.

10. Vacuum chamber according to any of claims 1-9, characterized in that the length of the at least one nozzle is 30-300 mm.

11. Vacuum chamber according to any of claims 1-10, characterized in that the cleaning gas comprises nitrogen or an inert gas.

12. Vacuum chamber according to any of claims 1-11, characterized in that the vacuum chamber is provided with a valve for controlling the cleaning gas source to provide the jet of gas to the nozzle.

13. A cleaning method, comprising:

carrying out exhaust treatment on the vacuum cavity through a vacuum pump;

injecting a cleaning gas into the vacuum chamber through at least one nozzle when the gas pressure in the vacuum chamber is less than or equal to a second threshold value;

when the air pressure in the vacuum cavity rises to a first threshold value, continuing to exhaust the vacuum cavity through the vacuum pump until the air pressure in the vacuum cavity is smaller than or equal to the second threshold value again;

the second threshold value is smaller than the first threshold value, and the first threshold value is smaller than or equal to 10 ³ pa。

14. The cleaning method according to claim 13, wherein when the air pressure in the vacuum chamber rises to a first threshold value, continuing to perform the evacuation process on the vacuum chamber by the vacuum pump until the air pressure in the vacuum chamber is again equal to or less than the second threshold value, further comprising:

when the air pressure in the vacuum cavity is smaller than or equal to the second threshold value again, jetting the cleaning gas into the vacuum cavity through at least one nozzle again so that the air pressure in the vacuum cavity is increased to the first threshold value again;

the exhaust treatment and the jetting of the cleaning gas are repeated 3 to 200 times.

15. The cleaning method according to claim 13 or 14, wherein the cleaning gas comprises nitrogen or an inert gas.

16. The cleaning method of any one of claims 13 to 15, wherein the second threshold is less than or equal to 10 ^-1 pa。

17. A semiconductor manufacturing apparatus comprising the vacuum chamber according to any one of claims 1 to 12.

18. A semiconductor manufacturing apparatus comprising a processor and a memory coupled to read and execute instructions in the memory to perform the method of any of claims 13 to 16.