JP2012182320A - Nozzle, substrate processing apparatus, and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To inhibit variation in size and speed of a droplet of a process liquid injected from a nozzle, and inhibit grow in size of the nozzle.SOLUTION: A nozzle 4 includes a body 26 and a piezoelectric element 14. The body 26 includes a supply port 29 supplying a process liquid, an exhaust port 30 exhausting the process liquid, a process liquid flow passageway 31 connecting the supply port 29 with the exhaust port 30, and a plurality of discharge ports 33 discharging the process liquid. The process liquid flow passageway 31 includes a plurality of branch flow passages 36. The plurality of branch flow passages 36 branch between the supply port 29 and the exhaust port 30 and concentrate between the supply port 29 and the exhaust port 30. The plurality of discharge ports 33 form a plurality of rows L1 corresponding to the plurality of branch flow passages 36, respectively. The plurality of discharge ports 33 are arranged along the corresponding branch flow passages 36 and connected to the corresponding branch flow passages 36, respectively. The piezoelectric element 14 applies oscillation to the process liquid flowing in the plurality of branch flow passages 36.

Description

  The present invention relates to a nozzle for discharging droplets of a processing liquid for processing a substrate, a substrate processing apparatus including the nozzle, and a substrate processing method using the nozzle. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks. Substrate, ceramic substrate, solar cell substrate and the like.

In a manufacturing process of a semiconductor device or a liquid crystal display device, a cleaning process is performed to remove foreign matters such as particles from a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device. For example, Patent Documents 1 and 2 disclose a single-wafer type substrate processing apparatus that cleans a substrate by causing a droplet of a processing liquid to collide with the substrate.
The substrate processing apparatus described in Patent Document 1 includes a two-fluid nozzle that generates droplets of a processing liquid by causing the processing liquid and a gas to collide with each other. The two-fluid nozzle includes a casing in which a treatment liquid discharge port and a gas discharge port are formed. When the processing liquid and the gas are simultaneously discharged from the processing liquid discharge port and the gas discharge port, the processing liquid and the gas collide in the vicinity of the casing, and a droplet of the processing liquid is generated.

  On the other hand, the substrate processing apparatus described in Patent Document 2 includes a cleaning nozzle that generates droplets of the processing liquid by applying vibration to the processing liquid. The cleaning nozzle includes a cylindrical body having a plurality of discharge ports and a piezoelectric element attached to the cylindrical body. The treatment liquid is supplied to the inside of the cylindrical body at a pressure of 10 MPa or less. When an AC voltage is applied to the piezoelectric element, vibration is applied to the processing liquid in the cylindrical body, and droplets of the processing liquid are ejected from the plurality of ejection ports.

JP 2007-227878 A JP 2010-56376 A

  In the case where the substrate is cleaned by causing the droplets of the processing liquid to collide with the substrate, the number of droplets ejected from the nozzle is preferably large. That is, as the number of droplets colliding with the substrate increases, the probability of collision with a foreign substance adhering to the substrate increases, so the removal effect also increases, so the more droplets ejected from the nozzle, the better Cleaning can be performed. Furthermore, since the same cleaning process can be performed in a shorter time as the number of droplets increases, the number of substrates processed per time can be increased. Further, when the substrate is cleaned by colliding the droplet of the processing liquid against the substrate, it is preferable that the variation in droplet size (particle diameter) and speed are small. That is, if there is a large variation in particle size and / or speed, there may be uneven cleaning, damage to the device pattern formed on the substrate, and destruction of the device pattern.

  The aforementioned two-fluid nozzle generates a droplet of the processing liquid by colliding the processing liquid and the gas. Therefore, it is difficult to control the particle size and speed. On the other hand, in the cleaning nozzle described in Patent Document 2, variations in particle size and speed can be suppressed by controlling the pressure of the processing liquid supplied to the cleaning nozzle and the vibration of the piezoelectric element. Therefore, good cleaning can be performed.

  However, in the cleaning nozzle described in Patent Document 2, a higher pressure is required to eject a high-speed droplet from a small hole, so that the treatment liquid is supplied into the cylindrical body at a maximum pressure of 10 MPa. For this reason, for example, by using a cylindrical body having a sufficient thickness, it is necessary to ensure the strength capable of withstanding the hydraulic pressure in the cleaning nozzle. However, if the thickness of the cylindrical body is large, the cleaning nozzle becomes large. Since the cleaning nozzle is disposed in a limited space in the substrate processing apparatus, it is preferable that the cleaning nozzle be small.

  Accordingly, an object of the present invention is to provide a nozzle capable of suppressing variations in the size and speed of the droplets of the processing liquid ejected from the nozzle and suppressing the enlargement of the nozzle, a substrate processing apparatus including the nozzle, and the nozzle It is providing the substrate processing method using this.

  The invention described in claim 1 for achieving the above object is a nozzle (4) that includes a main body (26) and a piezoelectric element (14), and discharges a droplet of a processing liquid for processing the substrate (W). . The main body has a supply port (29) to which a processing liquid is supplied, a discharge port (30) for discharging the processing liquid supplied to the supply port, and a processing liquid circulation connecting the supply port and the discharge port. It includes a passage (31) and a plurality of discharge ports (33) for discharging the processing liquid. The processing liquid flow path includes a plurality of branch flow paths (36). The plurality of branch flow paths branch between the supply port and the discharge port, and gather between the supply port and the discharge port. The plurality of discharge ports constitute a plurality of rows (L1) respectively corresponding to the plurality of branch flow paths. Further, the plurality of discharge ports are arranged along the corresponding branch flow path and connected to the corresponding branch flow path. The piezoelectric element imparts vibration to the processing liquid flowing through the plurality of branch channels.

In this section, alphanumeric characters in parentheses represent reference numerals of corresponding components in the embodiments described later, but the scope of the claims is not limited by these reference numerals.
According to this invention, the processing liquid supplied to the supply port flows through the processing liquid flow passage toward the discharge port. The processing liquid flow path includes a plurality of branch flow paths. The processing liquid supplied to the branch channel is discharged from a plurality of discharge ports connected to the branch channel. The processing liquid discharged from the discharge port is divided by the vibration provided by the piezoelectric element. Thus, a plurality of treatment liquid droplets are ejected from the nozzle. Furthermore, by discharging the processing liquid supplied to the supply port from the discharge port, it is possible to reliably suppress or prevent the processing liquid supplied to the processing liquid flow passage from staying in the processing liquid flow passage. The size and speed of the droplet of the processing liquid discharged from the discharge port are controlled by, for example, the pressure of the processing liquid supplied to the nozzle and the vibration of the piezoelectric element. Therefore, variations in droplet size and speed can be suppressed.

  As described above, the processing liquid flow path includes a plurality of branch flow paths. By branching the processing liquid flow path, the total length of the processing liquid flow path can be increased. Therefore, more discharge ports can be individually connected to the processing liquid flow passage. Thereby, more droplets can be simultaneously ejected from the nozzle. For example, it is conceivable to connect more discharge ports individually to the processing liquid flow path by increasing the flow path area of the processing liquid flow path (the area of the cross section orthogonal to the processing liquid flow path). However, when the flow path area of the processing liquid flow passage increases, the force applied to the main body due to the pressure of the processing liquid increases. Therefore, it is necessary to increase the strength of the main body, and the nozzle is increased in size. Therefore, it is possible to suppress an increase in size of the nozzle by branching the processing liquid flow passage. Further, since the plurality of discharge ports are arranged along the corresponding branch flow paths, for example, the flow area is increased as compared with the case where the plurality of discharge openings are arranged in a direction orthogonal to the branch flow paths. Can be suppressed. Thereby, the enlargement of a nozzle can be suppressed.

  The invention according to claim 2 is the nozzle according to claim 1, wherein the main body is formed of a material containing quartz. Quartz is stronger than, for example, resin. Therefore, by forming the main body from a material containing quartz, it is possible to suppress an increase in size of the nozzle while ensuring the strength of the nozzle. Furthermore, quartz has chemical resistance. Therefore, corrosion of the nozzle can be suppressed or prevented by forming the main body from a material containing quartz.

  The main body is not limited to a material including quartz, and may be formed of any one of a material including a resin, a material including a metal, and a material including a ceramic. However, since resin has a lower strength than quartz, there is a possibility that sufficient strength cannot be secured in the nozzle. Further, when the main body is formed of a material containing metal, the metal may be eluted in the processing liquid flowing in the nozzle, and the substrate may be contaminated by the metal dissolved in the processing liquid. Further, since ceramic is porous, when the main body is formed of a material containing ceramic, there is a possibility that a part of the main body is chipped and fragments of the main body are supplied to the substrate. Therefore, the main body is preferably formed of a material containing quartz.

  Invention of Claim 3 is a nozzle of Claim 1 or 2 further including the cover (27) which covers the said piezoelectric element, and the wiring (15) connected to the said piezoelectric element within the said cover. According to this invention, the piezoelectric element and the wiring (electrical wiring) are protected by the cover. Therefore, even when the nozzle is used in a chemical atmosphere, it is possible to suppress or prevent the piezoelectric element and the wiring from being exposed to the chemical atmosphere. Therefore, corrosion of the piezoelectric element and the wiring due to contact with the chemical solution can be suppressed or prevented.

  According to a fourth aspect of the present invention, the main body further includes a connection path (32) for connecting the branch flow path and the discharge port, and the flow path area of the connection path decreases as the discharge path is approached. It is a nozzle as described in any one of Claims 1-3 containing the reducing part (40) which carries out. It is preferable that the flow path area of the said reduction | decrease part is reducing continuously as it approaches the said discharge outlet.

  According to this invention, the processing liquid flowing through the branch flow path is discharged from the discharge port through the connection path. The flow path area of the reduced portion provided in the connection path decreases as it approaches the discharge port. Therefore, a decrease in the pressure of the processing liquid in the connection path can be reduced. That is, the pressure loss in the connection path can be reduced. Further, when the flow path area of the reduced portion is continuously reduced, stress concentration in the connection path can be suppressed or prevented.

According to a fifth aspect of the present invention, the processing liquid flow path and the connection path are provided inside the main body, and the main body includes a plurality of divided bodies (41, 42) coupled to each other. 4 is a nozzle.
According to this invention, a main body is formed by combining a plurality of divided bodies. Therefore, a plurality of divided bodies can be individually formed. Therefore, a process liquid flow path and a connection path can be formed by combining a plurality of divided bodies formed with recesses (43, 44) corresponding to the process liquid flow path and the connection path. Since the flow passage area of the reduced portion provided in the connection path decreases as it approaches the discharge port, it is difficult to form the reduced portion from the discharge port side. On the other hand, if it is before a some division body is couple | bonded, a reduction | decrease part can be formed from the branch flow path side. Therefore, the reduced portion can be easily formed.

  The invention according to claim 6 is the substrate holding means (2) for holding the substrate and the droplets of the processing liquid are ejected toward the substrate held by the substrate holding means. Substrate processing comprising: the nozzle according to claim 1; a processing liquid supply means (11) for supplying a processing liquid to the supply port of the nozzle; and a voltage applying means (16) for applying a voltage to the piezoelectric element of the nozzle. Device (1, 201).

  According to the present invention, a plurality of treatment liquid droplets can be ejected from the nozzle by supplying the treatment liquid from the treatment liquid supply means to the nozzle and applying a voltage to the piezoelectric element by the voltage application means. As a result, the droplets of the processing liquid can collide with the substrate held by the substrate holding means, and the foreign matter adhering to the substrate can be physically removed by the kinetic energy of the droplets. Further, for example, by controlling the pressure of the treatment liquid supplied to the nozzle and the vibration of the piezoelectric element, it is possible to suppress variations in droplet size and speed. Therefore, good cleaning can be performed.

  The invention according to claim 7 extends along the main surface of the substrate held by the substrate holding means, and when viewed from the vertical direction (D1) perpendicular to the main surface, the center of the main surface (C1 The nozzle is moved along a trajectory (X1) passing through (), and the nozzle is held so that the trajectory intersects a plurality of rows formed by the plurality of discharge ports when viewed from the vertical direction. The substrate processing apparatus (201) according to claim 6, further comprising a nozzle moving means (217) for performing the processing. The main surface of the substrate may be the surface of the substrate that is a device forming surface or the back surface of the substrate that is a non-device forming surface.

  According to this invention, the nozzle moving means moves the nozzle along a trajectory passing through the center of the main surface when viewed from a direction perpendicular to the main surface of the substrate. Further, the nozzle moving means holds the nozzles so that the trajectory intersects with the plurality of rows formed by the plurality of ejection openings when viewed from the direction perpendicular to the main surface of the substrate. That is, when viewed from the direction perpendicular to the main surface of the substrate, all the rows and the trajectories intersect. Therefore, the droplets of the processing liquid ejected from all the rows are sequentially collided with the central portion of the main surface of the substrate by moving the nozzles along the locus while ejecting the droplets of the processing liquid from the nozzles. Can do. Thereby, the main surface central part of a board | substrate can be wash | cleaned favorably.

  The substrate processing apparatus may further include a control unit that controls the nozzle moving unit. In this case, as in the invention described in claim 8, the control means controls the nozzle moving means so that the nozzle overlaps the center of the main surface when viewed from the vertical direction (Pc201). ) And a peripheral position (Pe201) where the nozzle overlaps the peripheral edge of the main surface when viewed from the vertical direction, and the plurality of rows are at the center of the main surface when viewed from the vertical direction. The nozzles may be moved along the locus so as to overlap one another. Further, the control means controls the nozzle moving means so that the first peripheral position where the nozzle overlaps the peripheral edge of the main surface when viewed from the vertical direction is different from the first peripheral position. The nozzle may be moved along the locus between the second peripheral position where the nozzle overlaps the peripheral edge of the main surface when viewed from the vertical direction.

  When moving the nozzle between the center position and the peripheral position, and when moving the nozzle between the first peripheral position and the second peripheral position, the nozzles were ejected from all rows. The droplets of the processing liquid can be sequentially collided with the central portion of the main surface of the substrate. Thereby, the main surface central part of a board | substrate can be wash | cleaned favorably. Further, when the nozzle is moved between the center position and the peripheral position, the moving range of the nozzle is narrower than when the nozzle is moved between the first peripheral position and the second peripheral position. Therefore, the space in the substrate processing apparatus can be effectively used by moving the nozzle between the center position and the peripheral position.

  Invention of Claim 9 supplies the process liquid to the said supply port of the said nozzle in the state which the nozzle as described in any one of Claims 1-5 has opposed the main surface of the board | substrate, And a step of applying a voltage to the piezoelectric element of the nozzle in parallel with the step of supplying a treatment liquid. According to the present invention, it is possible to achieve the same effects as those described with respect to the above-described substrate processing apparatus.

It is a mimetic diagram showing a schematic structure of a substrate processing apparatus concerning a 1st embodiment of this invention. It is a top view of the injection nozzle concerning a 1st embodiment of this invention, and the composition relevant to this. It is a typical side view of the injection nozzle concerning a 1st embodiment of this invention. It is a typical exploded perspective view of the injection nozzle concerning a 1st embodiment of this invention. It is a top view for demonstrating the structure of the main body with which the injection nozzle which concerns on 1st Embodiment of this invention was equipped. It is sectional drawing of the main body along the VI-VI line in FIG. It is sectional drawing of the main body which follows the VII-VII line in FIG. It is the figure which expanded a part of FIG. It is a figure for demonstrating the example of a process of the board | substrate performed by the substrate processing apparatus which concerns on 1st Embodiment of this invention. It is a top view which shows the state in which an injection nozzle is located in a center position. It is a top view of the injection nozzle concerning a 2nd embodiment of this invention, and the composition relevant to this. It is a top view which shows the state just before an injection nozzle reaches | attains center position. It is a top view which shows the state in which an injection nozzle is located in a center position.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic diagram showing a schematic configuration of a substrate processing apparatus 1 according to the first embodiment of the present invention. FIG. 2 is a plan view of the injection nozzle 4 and the configuration related thereto according to the first embodiment of the present invention.
The substrate processing apparatus 1 is a single-wafer type substrate processing apparatus that processes circular substrates W such as semiconductor wafers one by one. The substrate processing apparatus 1 includes a spin chuck 2 (substrate holding means) that horizontally holds and rotates a substrate W, a cylindrical cup 3 that surrounds the spin chuck 2, and a substrate W held by the spin chuck 2. , A first rinsing liquid nozzle 5 and a second rinsing liquid nozzle 6 for supplying a rinsing liquid to the substrate W held on the spin chuck 2, and a substrate processing apparatus 1 such as the spin chuck 2. And a control device 7 (control means) for controlling the operation of the device and the opening / closing of the valve. The injection nozzle 4 is an example of the nozzle of the present invention.

  The spin chuck 2 includes a spin base 8 that holds the substrate W horizontally and can rotate about a vertical axis passing through the center of the substrate W, and a spin motor 9 that rotates the spin base 8 about the vertical axis. The spin chuck 2 may be a holding chuck that horizontally holds the substrate W while holding the substrate W in a horizontal direction, or by adsorbing the back surface (lower surface) of the substrate W that is a non-device forming surface. A vacuum chuck that holds the substrate W horizontally may be used. In the first embodiment, the spin chuck 2 is a clamping chuck. The spin motor 9 is controlled by the control device 7.

  The ejection nozzle 4 is configured to eject a large number of droplets of the processing liquid downward. The ejection nozzle 4 is connected to a processing liquid supply mechanism 11 (processing liquid supply means) via a processing liquid supply pipe 10. Further, the injection nozzle 4 is connected to a treatment liquid discharge pipe 13 in which a discharge valve 12 is interposed. The processing liquid supply mechanism 11 is a mechanism including a pump, for example. The processing liquid supply mechanism 11 always supplies the processing liquid to the injection nozzle 4 at a predetermined pressure (for example, 10 MPa or less). Examples of the processing liquid supplied from the processing liquid supply mechanism 11 to the spray nozzle 4 include pure water (deionized water), carbonated water, a mixed solution of ammonia water and hydrogen peroxide water, and the like. The control device 7 can change the pressure of the processing liquid supplied to the ejection nozzle 4 to an arbitrary pressure by controlling the processing liquid supply mechanism 11.

  Moreover, as shown in FIG. 1, the injection nozzle 4 includes a piezoelectric element 14 (piezo element) disposed inside the injection nozzle 4. The piezoelectric element 14 is connected to a voltage application mechanism 16 (voltage application means) via a wiring 15. The voltage application mechanism 16 is a mechanism including an inverter, for example. The voltage application mechanism 16 applies an alternating voltage to the piezoelectric element 14. When an AC voltage is applied to the piezoelectric element 14, the piezoelectric element 14 vibrates at a frequency corresponding to the frequency of the applied AC voltage. The control device 7 can change the frequency of the AC voltage applied to the piezoelectric element 14 to an arbitrary frequency (for example, several hundred KHz to several MHz) by controlling the voltage application mechanism 16. Therefore, the frequency of vibration of the piezoelectric element 14 is controlled by the control device 7.

  The substrate processing apparatus 1 further includes a nozzle moving mechanism 17 that moves the spray nozzle 4. The nozzle moving mechanism 17 includes a nozzle arm 18 that holds the ejection nozzle 4, a turning mechanism 19 connected to the nozzle arm 18, and an elevating mechanism 20 connected to the turning mechanism 19. The rotation mechanism 19 is a mechanism including a motor, for example. The lifting mechanism 20 is a mechanism that includes a ball screw mechanism and a motor that drives the ball screw mechanism. The rotation mechanism 19 rotates the nozzle arm 18 around a vertical rotation axis A1 provided around the spin chuck 2. The injection nozzle 4 rotates together with the nozzle arm 18 around the rotation axis A1. Thereby, the injection nozzle 4 moves in the horizontal direction. On the other hand, the elevating mechanism 20 elevates and lowers the rotating mechanism 19 in the vertical direction D1. The injection nozzle 4 and the nozzle arm 18 move up and down in the vertical direction D1 together with the rotation mechanism 19. Thereby, the injection nozzle 4 moves in the vertical direction D1.

  The rotation mechanism 19 moves the spray nozzle 4 horizontally in a horizontal plane including a position above the spin chuck 2 and a position away from the top. Further, as shown in FIG. 2, the rotation mechanism 19 moves the ejection nozzle 4 horizontally along an arcuate locus X1 extending along the upper surface of the substrate W held by the spin chuck 2. The trajectory X1 connects two positions that do not overlap the upper surface of the substrate W when viewed from the vertical direction (vertical direction D1 in the first embodiment) perpendicular to the upper surface of the substrate W held by the spin chuck 2. It is a curve that passes through the center C1 of the upper surface of the substrate W when viewed from the vertical direction D1. When the lifting mechanism 20 lowers the spray nozzle 4 with the spray nozzle 4 positioned above the substrate W held by the spin chuck 2, the spray nozzle 4 comes close to the upper surface of the substrate W. When supplying droplets of the processing liquid ejected from the ejection nozzle 4 to the substrate W, the control device 7 controls the rotation mechanism 19 while the ejection nozzle 4 is close to the upper surface of the substrate W. Thus, the spray nozzle 4 is moved horizontally along the locus X1.

  As shown in FIG. 1, the first rinse liquid nozzle 5 is connected to a first rinse liquid supply pipe 22 in which a first rinse liquid valve 21 is interposed. The supply of the rinse liquid to the first rinse liquid nozzle 5 is controlled by opening and closing the first rinse liquid valve 21. The rinse liquid supplied to the first rinse liquid nozzle 5 is discharged toward the center of the upper surface of the substrate W held by the spin chuck 2. On the other hand, the second rinse liquid nozzle 6 is connected to a second rinse liquid supply pipe 24 in which a second rinse liquid valve 23 is interposed. The supply of the rinse liquid to the second rinse liquid nozzle 6 is controlled by opening and closing the second rinse liquid valve 23. The rinse liquid supplied to the second rinse liquid nozzle 6 is discharged downward from the second rinse liquid nozzle 6. Examples of the rinse liquid supplied to the first rinse liquid nozzle 5 and the second rinse liquid nozzle 6 include pure water, carbonated water, electrolytic ionic water, hydrogen water, ozone water, and diluted concentrations (for example, about 10 to 100 ppm). Examples thereof include hydrochloric acid water.

  The second rinse liquid nozzle 6 is fixed to the spray nozzle 4 by a stay 25. The second rinse liquid nozzle 6 moves in the horizontal direction and the vertical direction D1 together with the injection nozzle 4. Accordingly, the second rinse liquid nozzle 6 moves horizontally along the locus X1 together with the injection nozzle 4. As shown in FIG. 2, the spray nozzle 4 and the second rinse liquid nozzle 6 are arranged in the rotation direction D <b> 2 of the substrate W by the spin chuck 2. The rinsing liquid supplied to the second rinsing liquid nozzle 6 may be discharged downward from the injection nozzle 4, or from a supply position where a droplet of the processing liquid is supplied from the injection nozzle 4 to the upper surface of the substrate W. May also be supplied upstream of the rotation direction D2 of the substrate W and in the vicinity of the supply position.

FIG. 3 is a schematic side view of the injection nozzle 4 according to the first embodiment of the present invention. FIG. 4 is a schematic exploded perspective view of the injection nozzle 4 according to the first embodiment of the present invention.
The ejection nozzle 4 includes a main body 26 that discharges droplets of the processing liquid, a cover 27 attached to the main body 26, the piezoelectric element 14 covered with the cover 27, and a seal interposed between the main body 26 and the cover 27. 28. The main body 26 and the cover 27 are both made of a material having chemical resistance. In the first embodiment, the main body 26 is made of, for example, quartz. The cover 27 is made of, for example, a fluorine resin. The seal 28 is made of an elastic material such as EPDM (ethylene-propylene-diene rubber). The main body 26 has a strength that can withstand high pressure. A part of the main body 26 and the piezoelectric element 14 are accommodated in the cover 27. An end of the wiring 15 is connected to the piezoelectric element 14 inside the cover 27 by, for example, solder. The inside of the cover 27 is sealed with a seal 28.

  FIG. 5 is a plan view for explaining the configuration of the main body 26 provided in the injection nozzle 4 according to the first embodiment of the present invention. 6 is a cross-sectional view of the main body 26 taken along the line VI-VI in FIG. FIG. 7 is a cross-sectional view of the main body 26 taken along line VII-VII in FIG. FIG. 8 is an enlarged view of a part of FIG. In the following, reference is made to FIGS. In the following description, FIG. 1, FIG. 2, FIG. 4, FIG. 7, and FIG.

  The main body 26 includes a supply port 29 to which a processing liquid is supplied, a discharge port 30 that discharges the processing liquid supplied to the supply port 29, a processing liquid flow passage 31 that connects the supply port 29 and the discharge port 30, A plurality of connection paths 32 connected to the processing liquid flow path 31 and a plurality of discharge ports 33 respectively connected to the plurality of connection paths 32 are included. The treatment liquid flow path 31 and the connection path 32 are provided inside the main body 26. The supply port 29, the discharge port 30, and the discharge port 33 are opened on the surface of the main body 26. The supply port 29 and the discharge port 30 are located above the discharge port 33. The lower surface of the main body 26 is, for example, a flat surface, and the discharge port 33 opens at the lower surface of the main body 26. The processing liquid supply pipe 10 and the processing liquid discharge pipe 13 are connected to a supply port 29 and a discharge port 30, respectively. The processing liquid flowing through the processing liquid supply pipe 10 is supplied to the supply port 29. Further, the processing liquid discharged from the discharge port 30 is discharged to the processing liquid discharge pipe 13.

  The processing liquid flow passage 31 includes an upstream side collective flow path 34 connected to the supply port 29, a downstream side collective flow path 35 connected to the discharge port 30, an upstream side collective flow path 34, and a downstream side collective flow path 35. And two branch flow paths 36 connected to each other. The upstream collecting channel 34 and the downstream collecting channel 35 extend vertically downward from the supply port 29 and the discharge port 30, respectively. One end of each branch flow path 36 is connected to the lower end of the upstream side collective flow path 34, and the other end of each branch flow path 36 is connected to the lower end of the downstream side collective flow path 35. The lower end of the upstream collecting flow path 34 is a branch position, and the lower end of the downstream collecting flow path 35 is a collecting position. The two branch flow paths 36 extend horizontally from the branch position toward the collection position. As shown in FIG. 5, the two branch flow paths 36 have a rectangular shape in a plan view having four arc-shaped corners protruding outward. The two branch channels 36 are orthogonal to the upstream collecting channel 34 and the downstream collecting channel 35. The cross-sectional shape of the processing liquid flow passage 31 excluding the later-described middle flow portion 39 is, for example, a circle having a diameter of several millimeters or less.

  Each branch channel 36 is connected to an upstream portion 37 connected to the lower end of the upstream collecting channel 34, a downstream portion 38 connected to the lower end of the downstream collecting channel 35, and the upstream portion 37 and the downstream portion 38. A midstream portion 39. As shown in FIG. 5, the two upstream portions 37 extend from the lower end of the upstream collecting flow path 34 to the opposite sides. Similarly, the two downstream portions 38 extend from the lower end of the downstream collecting flow path 35 to the opposite sides. The midstream portion 39 extends linearly from the upstream portion 37 toward the downstream portion 38. The two midstream portions 39 are parallel. Each midstream portion 39 is not limited to a linear shape, and may extend in a curved shape. At least a part of each midstream portion 39 is located below the piezoelectric element 14. The vibration from the piezoelectric element 14 is applied to the treatment liquid flowing through each middle flow portion 39. Further, the flow path area of the midstream portion 39 is larger than the flow path areas of the upstream portion 37 and the downstream portion 38. The upstream portion 37 and the downstream portion 38 and the midstream portion 39 are connected so that the flow path area continuously changes. As shown in FIG. 7, each midstream portion 39 has an elliptical cross-sectional shape that is long in the horizontal direction (a cross-sectional shape orthogonal to the midstream portion 39). Each midstream portion 39 is connected to a plurality of connection paths 32.

  As shown in FIG. 6, each connection path 32 extends vertically downward from the lower part of the midstream portion 39. The connection path 32 is orthogonal to the midstream portion 39. Each discharge port 33 is connected to one of the branch flow paths 36 via the connection path 32. The cross-sectional shape of the connection path 32 is, for example, a circle having a diameter of several mm or less. The discharge port 33 is a fine hole having a diameter of several μm to several tens of μm. The flow path area of the connection path 32 is smaller than the flow path area of the branch flow path 36. The channel area of the discharge port 33 is smaller than the channel area of the connection path 32. As shown in FIG. 7, the connection path 32 includes a conical reduction portion 40 whose flow path area continuously decreases as it approaches the discharge port 33. The discharge port 33 is connected to the lower end of the reducing portion 40 corresponding to the lower end of the connection path 32. The corresponding connection path 32 and the discharge port 33 are coaxial. As shown in FIG. 5, the plurality of discharge ports 33 connected to the same branch flow path 36 constitute two rows L1. Therefore, in the first embodiment, the plurality of discharge ports 33 constitute four rows L1.

  Each row L1 is configured by a large number (for example, ten or more) of discharge ports 33. Each row L1 extends linearly along the corresponding branch flow path 36. Each row L1 is not limited to a linear shape, and may extend in a curved shape. The four rows L1 are parallel. Two rows L1 corresponding to the same branch flow path 36 are adjacent to each other. The interval between the two rows L1 is, for example, several mm or less. The plurality of discharge ports 33 constituting the same row L1 are arranged at equal intervals. The interval between two discharge ports 33 adjacent in the same row L1 is, for example, several mm or less, and is constant in any row L1. As shown in FIG. 8, in two rows L1 corresponding to the same branch flow path 36, a plurality of discharge ports 33 (discharge ports 33a in FIG. 8) constituting one row L1 and the other row L1 are constituted. The plurality of discharge ports 33 (discharge ports 33b in FIG. 8) are alternately arranged when viewed from a horizontal direction orthogonal to the two rows L1. Therefore, as shown in FIG. 5, the two rows L <b> 1 corresponding to the same branch flow path 36 are shifted in the longitudinal direction of the branch flow path 36.

  As shown in FIG. 2, the nozzle moving mechanism 17 moves the ejection nozzle 4 horizontally along the arcuate locus X1. The nozzle arm 18 holds the injection nozzle 4 so that one midstream portion 39 is along the tangent to the locus X1 when viewed from the vertical direction D1. Accordingly, the two rows L1 corresponding to one of the midstream portions 39 extend along the tangent line of the locus X1. On the other hand, the other midstream portion 39 is disposed inside or outside the locus X1. When the nozzle moving mechanism 17 moves the ejection nozzle 4 horizontally along the locus X1, the two rows L1 corresponding to one of the midstream portions 39 move along the locus X1.

  As shown in FIG. 4, the main body 26 includes an upper divided body 41 (divided body) and a lower divided body 42 (divided body). Both the upper divided body 41 and the lower divided body 42 are made of quartz. The upper divided body 41 is disposed above the lower divided body 42. The upper divided body 41 and the lower divided body 42 are coupled by welding, for example. The plurality of branch flow paths 36 are provided between the upper divided body 41 and the lower divided body 42. That is, as shown in FIG. 6, a lower concave portion 43 that is recessed downward from the upper surface of the lower divided body 42 is formed on the upper surface of the lower divided body 42. An upper recess 44 that is recessed upward from the lower surface of the divided body 41 is formed. The upper divided body 41 and the lower divided body 42 are joined in a state where the upper concave portion 44 and the lower concave portion 43 are vertically overlapped. The processing liquid flow path 31 and the connection path 32 are constituted by an upper recess 44 and a lower recess 43.

  The processing liquid supply mechanism 11 (see FIG. 1) constantly supplies the processing liquid to the injection nozzle 4 at a high pressure. The processing liquid supplied from the processing liquid supply mechanism 11 to the supply port 29 via the processing liquid supply pipe 10 is supplied to the processing liquid flow passage 31. In a state where the discharge valve 12 (see FIG. 1) is closed, the pressure (liquid pressure) of the processing liquid in the processing liquid flow passage 31 is sufficiently increased. Therefore, when the discharge valve 12 is closed, the processing liquid is ejected from each discharge port 33 by the liquid pressure. Further, when an AC voltage is applied to the piezoelectric element 14 with the discharge valve 12 closed, vibration of the piezoelectric element 14 is imparted to the processing liquid flowing through the branch flow path 36 and is ejected from each discharge port 33. The treatment liquid is divided by this vibration. Therefore, when an alternating voltage is applied to the piezoelectric element 14 with the discharge valve 12 closed, a droplet of the processing liquid is ejected from each discharge port 33. Thereby, a large number of droplets of the treatment liquid having a uniform particle size are simultaneously ejected at a uniform speed.

  On the other hand, in the state where the discharge valve 12 is opened, the processing liquid supplied to the processing liquid flow passage 31 is discharged from the discharge port 30 to the processing liquid discharge pipe 13. Further, since the diameter of the discharge port 33 is very small, the pressure loss at the connection portion between the connection path 32 and the discharge port 33 is large. In the state where the discharge valve 12 is opened, the liquid pressure in the processing liquid flow passage 31 does not rise sufficiently. Therefore, in a state where the discharge valve 12 is opened, the processing liquid supplied to the processing liquid flow passage 31 is discharged from the discharge port 30 to the processing liquid discharge pipe 13, and the processing liquid is not discharged from the plurality of discharge ports 33. . Accordingly, the discharge of the processing liquid from the discharge port 33 is controlled by opening and closing the discharge valve 12. The control device 7 opens the discharge valve 12 while the spray nozzle 4 is not used for processing the substrate W (while the spray nozzle 4 is on standby). Therefore, even when the injection nozzle 4 is on standby, the state in which the processing liquid is circulating inside the injection nozzle 4 is maintained.

FIG. 9 is a view for explaining a processing example of the substrate W performed by the substrate processing apparatus 1 according to the first embodiment of the present invention. FIG. 10 is a plan view showing a state where the injection nozzle 4 is located at the center position Pc1. In the following, reference is made to FIG. 1 and FIG. In the following description, FIGS. 2 and 10 will be referred to as appropriate.
The unprocessed substrate W is transported by a transport robot (not shown), and placed on the spin chuck 2 with the surface, which is a device formation surface, facing upward, for example. The control device 7 controls the spin chuck 2 to hold the substrate W by the spin chuck 2. Thereafter, the control device 7 controls the spin motor 9 to rotate the substrate W held on the spin chuck 2. When the substrate W is transported onto the spin chuck 2, the control device 7 retracts the spray nozzle 4 and the like from above the spin chuck 2.

  Next, pure water, which is an example of a rinsing liquid, is supplied from the first rinsing liquid nozzle 5 to the substrate W, and a first cover rinsing process is performed to cover the upper surface of the substrate W with pure water. Specifically, the control device 7 opens the first rinsing liquid valve 21 while rotating the substrate W by the spin chuck 2, and the spin rinsing nozzle 5 starts from the first rinsing liquid nozzle 5 as shown in FIG. 9A. The pure water is discharged toward the center of the upper surface of the substrate W held at 2. The pure water discharged from the first rinsing liquid nozzle 5 is supplied to the center of the upper surface of the substrate W, and spreads outward along the upper surface of the substrate W due to the centrifugal force generated by the rotation of the substrate W. Thereby, pure water is supplied to the entire upper surface of the substrate W, and the entire upper surface of the substrate W is covered with pure water. When a predetermined time elapses after the first rinse liquid valve 21 is opened, the control device 7 closes the first rinse liquid valve 21 and stops the discharge of pure water from the first rinse liquid nozzle 5.

  Next, a cleaning process for supplying a droplet of pure water, which is an example of a processing liquid, to the substrate W from the ejection nozzle 4 and cleaning the substrate W, and pure water, which is an example of a rinsing liquid, are supplied from the second rinsing liquid nozzle 6. A second cover rinsing process for supplying the substrate W and covering the upper surface of the substrate W with pure water is performed in parallel. Specifically, the control device 7 controls the nozzle moving mechanism 17 to move the injection nozzle 4 above the spin chuck 2 and bring the injection nozzle 4 close to the upper surface of the substrate W. Thereafter, the control device 7 opens the second rinsing liquid valve 23 while rotating the substrate W by the spin chuck 2, and as shown in FIG. The pure water is discharged toward In this state, the control device 7 closes the discharge valve 12 and controls the voltage application mechanism 16 to apply an AC voltage having a predetermined frequency to the piezoelectric element 14 of the injection nozzle 4.

  The control device 7 controls the nozzle moving mechanism 17 to close the discharge valve 12 and horizontally move the injection nozzle 4 along the locus X1 in a state where an AC voltage having a predetermined frequency is applied to the piezoelectric element 14. . Specifically, as shown in FIG. 2 and FIG. 9B, the control device 7 reciprocates the injection nozzle 4 a plurality of times between the center position Pc1 and the peripheral position Pe1. The center position Pc1 is a position where the injection nozzle 4 and the center C1 of the upper surface of the substrate W overlap when viewed from the vertical direction D1, and the peripheral position Pe1 is the injection nozzle 4 and the substrate W when viewed from the vertical direction D1. It is the position which overlaps with the periphery. As shown in FIG. 10, in the state where the injection nozzle 4 is located at the center position Pc1, when viewed from the vertical direction D1, one midstream portion 39 and the center C1 of the upper surface of the substrate W overlap. Further, as shown in FIG. 2, in a state where the injection nozzle 4 is located between the center position Pc1 and the peripheral position Pe1, the second rinse liquid nozzle 6 is located upstream of the injection nozzle 4 with respect to the rotation direction D2 of the substrate W. positioned. Therefore, the control device 7 moves the ejection nozzle 4 in a range where the second rinse liquid nozzle 6 is positioned on the upstream side of the ejection nozzle 4 with respect to the rotation direction D2 of the substrate W.

  As described above, when an AC voltage is applied to the piezoelectric element 14 with the discharge valve 12 closed, a large number of pure water droplets are ejected downward from the ejection nozzle 4. Thus, a large number of pure water droplets are supplied to the upper surface of the substrate W covered with pure water. Accordingly, the nozzle moving mechanism 17 moves the ejection nozzle 4 between the center position Pc1 and the peripheral position Pe1, so that a large number of liquid droplets ejected from the ejection nozzle 4 are supplied to the entire upper surface of the substrate W. . The pure water supplied to the second rinse liquid nozzle 6 is discharged toward the lower side of the injection nozzle 4. Accordingly, the pure water droplets ejected from the ejection nozzle 4 are sprayed onto a part of the upper surface of the substrate W covered with the pure water ejected from the second rinse liquid nozzle 6. Therefore, a large number of liquid droplets ejected from the ejection nozzle 4 collide with the upper surface of the substrate W covered with pure water.

  Foreign substances such as particles adhering to the upper surface of the substrate W are physically removed by the kinetic energy of the droplets sprayed on the upper surface of the substrate W. Thereby, the upper surface of the substrate W is cleaned. Further, since pure water droplets are sprayed on the upper surface of the substrate W covered with pure water, damage to the upper surface of the substrate W is suppressed or prevented. Furthermore, since pure water droplets are sprayed on the upper surface of the substrate W covered with pure water, it is possible to prevent foreign matter that has been peeled off from the upper surface of the substrate W due to collision of the droplets from adhering to the upper surface of the substrate W again. Or it can be prevented. When the cleaning process and the second cover rinsing process are performed for a predetermined time, the control device 7 opens the discharge valve 12 and closes the second rinsing liquid valve 23, and removes from the injection nozzle 4 and the second rinsing liquid nozzle 6. Stop the discharge of pure water.

  Next, pure water which is an example of the rinsing liquid is supplied from the first rinsing liquid nozzle 5 to the substrate W, and the chemical liquid is discharged as the rinsing liquid from the pure water adhering to the substrate W or the second rinsing liquid nozzle 6. In the case of being rinsed, rinse treatment for washing away the chemical solution is performed. Specifically, the control device 7 opens the first rinsing liquid valve 21 while rotating the substrate W by the spin chuck 2, and the first rinsing liquid nozzle 5 starts the spin chuck as shown in FIG. 9C. The pure water is discharged toward the center of the upper surface of the substrate W held at 2. The pure water discharged from the first rinsing liquid nozzle 5 is supplied to the center of the upper surface of the substrate W, and spreads outward along the upper surface of the substrate W due to the centrifugal force generated by the rotation of the substrate W. Thereby, pure water is supplied to the entire upper surface of the substrate W, and the pure water or chemical supplied from the spray nozzle 4 and the second rinse liquid nozzle 6 to the substrate W is washed away. When a predetermined time elapses after the first rinse liquid valve 21 is opened, the control device 7 closes the first rinse liquid valve 21 and stops the discharge of pure water from the first rinse liquid nozzle 5.

  Next, a drying process (spin drying) for drying the substrate W is performed. Specifically, the control device 7 controls the spin motor 9 to rotate the substrate W at a high rotation speed (for example, several thousand rpm). As a result, a large centrifugal force acts on the pure water adhering to the substrate W, and the pure water adhering to the substrate W is shaken off around the substrate W as shown in FIG. In this way, pure water is removed from the substrate W, and the substrate W is dried. After the drying process is performed for a predetermined time, the control device 7 controls the spin motor 9 to stop the rotation of the substrate W by the spin chuck 2. Thereafter, the processed substrate W is unloaded from the spin chuck 2 by the transfer robot.

  As described above, in the first embodiment, the processing liquid is supplied from the processing liquid supply mechanism 11 to the ejection nozzle 4, and a voltage is applied to the piezoelectric element 14 by the voltage application mechanism 16, whereby a plurality of liquid droplets of the processing liquid. Can be ejected from the ejection nozzle 4. As a result, the droplets of the processing liquid can collide with the substrate W held on the spin chuck 2, and foreign matters attached to the substrate W can be physically removed by the kinetic energy of the droplets. Furthermore, by controlling the pressure of the processing liquid supplied to the ejection nozzle 4 and the vibration of the piezoelectric element 14, variations in droplet size and speed can be suppressed. Therefore, good cleaning can be performed.

  In the first embodiment, the treatment liquid flow passage 31 provided in the main body 26 of the injection nozzle 4 includes a plurality of branch flow paths 36. By branching the processing liquid flow passage 31, the total length of the processing liquid flow passage 31 can be increased. Therefore, more discharge ports 33 can be individually connected to the processing liquid flow passage 31. Thereby, more droplets can be simultaneously ejected from the ejection nozzle 4. Furthermore, since the increase in the maximum flow path area can be suppressed or prevented, the enlargement of the injection nozzle 4 can be suppressed. Furthermore, since the plurality of discharge ports 33 are arranged along the corresponding branch flow paths 36, an increase in the maximum flow path area can be suppressed. Thereby, the enlargement of the injection nozzle 4 can be suppressed.

  Moreover, in 1st Embodiment, the main body 26 of the injection nozzle 4 is formed with quartz. Quartz is stronger than, for example, resin. Therefore, by forming the main body 26 from quartz, it is possible to suppress the increase in size of the injection nozzle 4 while ensuring the strength of the injection nozzle 4. Furthermore, quartz has chemical resistance. Therefore, corrosion of the spray nozzle 4 can be suppressed or prevented by forming the main body 26 from quartz.

  In the first embodiment, the wiring 15 for applying a voltage to the piezoelectric element 14 is connected to the piezoelectric element 14 in the cover 27. Therefore, the piezoelectric element 14 and the wiring 15 are protected by the cover 27. Therefore, even when the injection nozzle 4 is used in a chemical atmosphere, it is possible to suppress or prevent the piezoelectric element 14 and the wiring 15 from being exposed to the chemical atmosphere. Thereby, it can suppress or prevent that the piezoelectric element 14 and the wiring 15 corrode by contact with a chemical | medical solution.

  In the first embodiment, a connection path 32 that connects the branch flow path 36 and the discharge port 33 is provided in the main body 26 of the injection nozzle 4. The processing liquid flowing through the branch flow path 36 is discharged from the discharge port 33 through the connection path 32. The connection path 32 includes a decreasing portion 40 in which the flow path area decreases as it approaches the discharge port 33. The flow path area of the decreasing part 40 continuously decreases as the discharge port 33 is approached. Accordingly, a decrease in the pressure of the processing liquid in the connection path 32 can be reduced. That is, the pressure loss in the connection path 32 can be reduced. Furthermore, since the flow path area of the reduced portion 40 is continuously reduced, stress concentration in the connection path 32 can be suppressed or prevented.

  In the first embodiment, the main body 26 is formed by combining the upper divided body 41 and the lower divided body 42. The upper divided body 41 and the lower divided body 42 are individually molded before being joined to each other. That is, before the upper divided body 41 and the lower divided body 42 are coupled to each other, the upper concave portion 44 and the lower concave portion 43 constituting the processing liquid flow passage 31 and the connection path 32 are respectively connected to the upper divided body 41 and the lower divided body 43. It is formed in the side divided body 42. Since the flow path area of the reduction part 40 provided in the connection path 32 decreases as it approaches the discharge port 33, it is difficult to form the reduction part 40 from the discharge port 33 side. On the other hand, before the upper divided body 41 and the lower divided body 42 are joined, the decreasing portion 40 can be formed from the branch flow path 36 side. Therefore, the reduction part 40 can be formed easily.

  In the first embodiment, the treatment liquid discharge pipe 13 is connected to the discharge port 30 of the injection nozzle 4, and the discharge valve 12 is interposed in the treatment liquid discharge pipe 13. When the discharge valve 12 is closed, the processing liquid supplied to the supply port 29 of the injection nozzle 4 is discharged from the plurality of discharge ports 33 through the processing liquid flow passage 31. In the state where the discharge valve 12 is opened, the processing liquid supplied to the supply port 29 of the injection nozzle 4 is discharged from the discharge port 30 through the processing liquid flow passage 31. Accordingly, it is possible to prevent the processing liquid from staying in the processing liquid flow passage 31 in any state of the state where the discharge valve 12 is closed and the state where the discharge valve 12 is opened. Thereby, generation | occurrence | production of bacteria in the injection nozzle 4 by retention of a process liquid can be suppressed or prevented. Therefore, it is possible to suppress or prevent the droplets of the processing liquid containing bacteria from being supplied to the substrate W and contaminating the substrate W.

  In the first embodiment, in two rows L1 corresponding to the same branch flow path 36, a plurality of discharge ports 33 constituting one row L1 and a plurality of discharge ports 33 constituting the other row L1 Are arranged so as to be alternately arranged when viewed from a horizontal direction orthogonal to the two rows L1. That is, in two different rows L1, one row L1 is arranged so as not to overlap with the discharge ports 33 constituting the other row L1 when viewed from any direction orthogonal to the two rows L1. A discharge port 33 is included. Therefore, when the spray nozzle 4 is moved while supplying a plurality of treatment liquid droplets from the spray nozzle 4 to the upper surface of the substrate W, the range of collision of the treatment liquid droplets on the upper surface of the substrate W is widened. The treatment liquid droplets are uniformly supplied to the upper surface of the substrate W. Therefore, the time required for cleaning the substrate W can be shortened and the uniformity of cleaning can be improved.

  Next explained is the second embodiment of the invention. The main difference between the second embodiment and the first embodiment described above is that the arrangement of the injection nozzles 4 is different. That is, in the first embodiment, only a part of the columns L1 intersects the locus X1, whereas in the second embodiment, all the columns L1 intersect the locus X1. In the following FIGS. 11 to 12, the same components as those shown in FIGS. 1 to 10 described above are denoted by the same reference numerals as those in FIG. 1 and the description thereof is omitted.

FIG. 11 is a plan view of the injection nozzle 4 according to the second embodiment of the present invention and the configuration related thereto. FIG. 12 is a plan view showing a state immediately before the injection nozzle 4 reaches the center position Pc201. FIG. 13 is a plan view showing a state where the injection nozzle 4 is located at the center position Pc201.
The substrate processing apparatus 201 according to the second embodiment has the same configuration as the substrate processing apparatus 1 according to the first embodiment except for the nozzle arm and the stay. That is, as shown in FIG. 11, the nozzle moving mechanism 217 (nozzle moving means) provided in the substrate processing apparatus 201 includes a nozzle arm 218. The nozzle arm 218 ejects the four rows L1 so as to intersect the trajectory X1 when viewed from the vertical direction (vertical direction D1 in the second embodiment) perpendicular to the upper surface of the substrate W held by the spin chuck 2. The nozzle 4 is held. The second rinse liquid nozzle 6 is fixed to the spray nozzle 4 by a stay 225. The spray nozzle 4 and the second rinse liquid nozzle 6 are arranged in the rotation direction D2 of the substrate W by the spin chuck 2.

  When the substrate W is cleaned by ejecting droplets of the processing liquid from the ejection nozzle 4, the control device 7 rotates the substrate W by the spin chuck 2 and sees the ejection nozzle 4 and the substrate W when viewed from the vertical direction D 1. The injection nozzle 4 is reciprocated a plurality of times between a center position Pc201 where the center C1 of the upper surface of the substrate overlaps and a peripheral position Pe201 where the injection nozzle 4 and the periphery of the substrate W overlap when viewed from the vertical direction D1. As shown in FIG. 13, the center position Pc201 is a position where the midstream portion 39 located on the peripheral edge Pe201 side overlaps the center C1 of the upper surface of the substrate W when viewed from the vertical direction D1. In a state where the injection nozzle 4 is located at the center position Pc201, the two rows L1 corresponding to the midstream portion 39 located on the peripheral edge Pe201 side are orthogonal to the radius R1 of the substrate W. As shown in FIG. 11, in the state where the injection nozzle 4 is located between the center position Pc201 and the peripheral position Pe201, the second rinse liquid nozzle 6 is located on the upstream side of the injection nozzle 4 with respect to the rotation direction D2 of the substrate W. ing. Therefore, the control device 7 moves the ejection nozzle 4 in a range where the second rinse liquid nozzle 6 is positioned on the upstream side of the ejection nozzle 4 with respect to the rotation direction D2 of the substrate W.

  Also, as shown in FIG. 12, immediately before the injection nozzle 4 reaches the center position Pc201, the midstream portion 39 located on the opposite side to the peripheral position Pe201 is the center C1 of the upper surface of the substrate W when viewed from the vertical direction D1. It overlaps with. As shown in FIG. 13, in a state where the injection nozzle 4 is located at the center position Pc201, the midstream portion 39 located on the peripheral edge Pe201 side is located at the center C1 on the upper surface of the substrate W when viewed from the vertical direction D1. overlapping. Therefore, the control device 7 injects along the trajectory X1 between the center position Pc201 and the peripheral position Pe201 so that all the rows L1 sequentially overlap the center C1 of the upper surface of the substrate W when viewed from the vertical direction D1. The nozzle 4 is moved.

  As described above, in the second embodiment, the nozzle moving mechanism 217 moves the injection nozzle 4 so that the plurality of rows L1 formed by the plurality of discharge ports 33 and the locus X1 intersect when viewed from the vertical direction D1. keeping. That is, when viewed from the vertical direction D1, all the rows L1 and the trajectory X1 intersect. Therefore, by moving the spray nozzle 4 along the trajectory X1 while ejecting the droplet of the processing liquid from the spray nozzle 4, the central portion of the upper surface of the substrate W causes the droplets of the processing liquid sprayed from all the rows L1. Can be made to collide sequentially. On the other hand, for example, in the case where all the rows L1 and the trajectory X1 do not intersect as in the first embodiment described above, a part of the rows L1 (corresponding to one midstream portion 39 in the first embodiment). Only the droplets of the processing liquid ejected from the two rows L1) are supplied to the center of the upper surface of the substrate W. Therefore, the number of droplets colliding with the center of the upper surface of the substrate W can be increased by intersecting all the rows L1 and the locus X1. Thereby, the center part of the upper surface of the substrate W can be cleaned well.

  In the second embodiment, the control device 7 moves the injection nozzle 4 between the center position Pc201 and the peripheral position Pe201. Therefore, compared with the case where the injection nozzle 4 is moved between two positions (first peripheral position and second peripheral position) where the injection nozzle 4 overlaps the upper surface periphery of the substrate W when viewed from the vertical direction D1. The moving range of the nozzle 4 is narrow. Further, since the control device 7 moves the spray nozzle 4 between the center position Pc201 and the peripheral position Pe201, the second rinse liquid nozzle 6 is always positioned upstream of the spray nozzle 4 with respect to the rotation direction D2 of the substrate W. be able to. Accordingly, the rinse liquid discharged from the second rinse liquid nozzle 6 can be supplied in advance to a part of the upper surface of the substrate W onto which the droplets of the processing liquid are sprayed. Thereby, a part of the upper surface of the substrate W to which the droplet of the processing liquid is sprayed can be reliably protected by the rinsing liquid.

Although the embodiments of the present invention have been described above, the present invention is not limited to the contents of the first and second embodiments described above, and various modifications can be made within the scope of the claims. is there.
For example, in the first and second embodiments described above, the case where the processing liquid flow path 31 includes two branch flow paths 36 has been described. However, the processing liquid flow path 31 includes three or more branch flow paths 36. May be included.

In the first and second embodiments described above, the case where two rows L1 are provided in one branch flow path 36 has been described. However, the number of rows L1 provided in one branch flow path 36 is as follows. One may be sufficient and three or more may be sufficient.
In the first and second embodiments described above, the case where two rows L1 are provided in each of the two branch channels 36 has been described. However, the number of columns L1 provided in each branch channel 36 is as follows. May be different.

  In the first and second embodiments described above, the plurality of branch flow paths 36 branch at the lower end of the upstream collecting flow path 34 that is the branching position, and at the lower end of the downstream collecting flow path 35 that is the collecting position. Although the case where they are gathered has been described, a branch / set position may be provided between the branch position and the set position. In other words, the plurality of branch flow paths 36 branched at the branch position may gather at the branch / aggregation position and branch again, and may gather again at the gathering position.

Further, in the first and second embodiments described above, a case has been described in which the interval between two ejection ports 33 adjacent to each other in the same row L1 is constant in any row L1, but what is the other row L1? A row L1 including two discharge ports 33 arranged at different intervals may be provided.
In the first and second embodiments described above, the case where the plurality of discharge ports 33 constituting the same row L1 are arranged at equal intervals has been described. However, the plurality of discharge ports constituting the same row L1 is described. The outlets 33 may not be arranged at regular intervals.

  In the first and second embodiments described above, the case where one piezoelectric element 14 is attached to the upper surface of the main body 26 has been described. However, a plurality of piezoelectric elements 14 may be attached to the main body 26. . In this case, it is preferable that an AC voltage is applied to the plurality of piezoelectric elements 14 so that the vibration phases of the piezoelectric elements 14 match. Further, the attachment position of the piezoelectric element 14 with respect to the main body 26 is not limited to the upper surface of the main body 26, and may be a position other than the upper surface such as a side surface of the main body 26. Specifically, all the piezoelectric elements 14 may be attached to the side surface of the main body 26. When a plurality of piezoelectric elements 14 are attached to the main body 26, the piezoelectric elements 14 may be attached to the upper surface and side surfaces of the main body 26.

In the first and second embodiments described above, the case where the locus X1 is a curve has been described, but the locus X1 may be a straight line. That is, the locus X1 extends along the upper surface of the substrate W held by the spin chuck 2, and is a straight line passing through the center C1 of the upper surface of the substrate W when viewed from the vertical direction perpendicular to the upper surface of the substrate W. May be.
In the first and second embodiments, the case where the substrate processing apparatuses 1 and 201 are apparatuses for processing a circular substrate such as a semiconductor wafer has been described. However, the substrate processing apparatuses 1 and 201 are liquid crystal displays. An apparatus for processing a polygonal substrate such as an apparatus glass substrate may be used.

  In addition, various design changes can be made within the scope of matters described in the claims.

1. Substrate processing apparatus 2. Spin chuck (substrate holding means)
4 Injection nozzle (nozzle)
7 Control device (control means)
11 Treatment liquid supply mechanism (treatment liquid supply means)
16 Voltage application mechanism (voltage application means)
14 Piezoelectric element 15 Wiring 26 Main body 27 Cover 29 Supply port 30 Discharge port 31 Process liquid flow path 32 Connection path 33 Discharge port 36 Branch flow path 40 Reduction part 41 Upper side division body (division body)
42 Lower division (division)
201 Substrate processing apparatus 217 Nozzle moving mechanism (nozzle moving means)
C1 center D1 vertical direction (vertical direction)
Pc201 center position Pe201 peripheral position X1 locus L1 row W substrate

Claims (9)

A nozzle for discharging droplets of a processing solution for processing a substrate,
A supply port to which the processing liquid is supplied;
A discharge port for discharging the processing liquid supplied to the supply port;
A treatment liquid flow passage that includes a plurality of branch flow paths that branch between the supply port and the discharge port and gather between the supply port and the discharge port, and that connects the supply port and the discharge port. When,
A plurality of rows each corresponding to the plurality of branch flow paths, arranged along the corresponding branch flow paths, and a plurality of discharge ports connected to the corresponding branch flow paths;
Including a main body,
And a piezoelectric element that imparts vibrations to the processing liquid flowing through the plurality of branch channels.   The nozzle according to claim 1, wherein the main body is made of a material containing quartz. A cover covering the piezoelectric element;
The nozzle according to claim 1, further comprising a wiring connected to the piezoelectric element in the cover. The said main body further contains the connection path which connects the said branch flow path and the said discharge outlet, The said connection path contains the reduction | decrease part which a flow path area reduces as it approaches the said discharge outlet. The nozzle as described in any one. The treatment liquid flow path and the connection path are provided inside the main body,
The nozzle according to claim 4, wherein the main body includes a plurality of divided bodies coupled to each other. Substrate holding means for holding the substrate;
The nozzle according to any one of claims 1 to 5, which discharges a droplet of a processing liquid toward a substrate held by the substrate holding unit,
Treatment liquid supply means for supplying a treatment liquid to the supply port of the nozzle;
And a voltage applying means for applying a voltage to the piezoelectric element of the nozzle.   The nozzle extends along the main surface of the substrate held by the substrate holding means, and moves the nozzle along a trajectory passing through the center of the main surface when viewed from a vertical direction perpendicular to the main surface. The substrate processing apparatus according to claim 6, further comprising a nozzle moving unit configured to hold the nozzle so that a plurality of rows configured by the plurality of ejection openings and the locus intersect when viewed from the vertical direction.   By controlling the nozzle moving means, the nozzle overlaps the center of the main surface when viewed from the vertical direction, and the nozzle overlaps the periphery of the main surface when viewed from the vertical direction. The control unit further includes a control unit configured to move the nozzle along the trajectory so that the plurality of rows sequentially overlap the center of the main surface when viewed from the vertical direction with respect to a peripheral position. Substrate processing equipment. Supplying the processing liquid to the supply port of the nozzle in a state where the nozzle according to any one of claims 1 to 5 is opposed to the main surface of the substrate;
And a step of applying a voltage to the piezoelectric element of the nozzle in parallel with the step of supplying the processing liquid.

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