CN115799247B

CN115799247B - IGBT device and IGBT module

Info

Publication number: CN115799247B
Application number: CN202310082564.3A
Authority: CN
Inventors: 仇亮; 窦静
Original assignee: Guangdong Renmao Electronic Co ltd
Current assignee: Guangdong Renmao Electronic Co ltd
Priority date: 2023-02-08
Filing date: 2023-02-08
Publication date: 2023-04-14
Anticipated expiration: 2043-02-08
Also published as: CN115799247A

Abstract

The invention discloses an IGBT device and an IGBT module, which comprise an IGBT chip and an FWD chip, wherein the FWD chip and the IGBT chip are stacked on a relay liner plate, so that bonding lead points on the chip can be directly and electrically connected on the liner plate in a welding mode, the arrangement of the bonding lead is cancelled, the service life of the chip can be ensured from one aspect, the welding spot electric connection has higher strength compared with the bonding lead, and the problem of mutual superposition of heat is solved by directly arranging a heat dissipation flow channel on the relay liner plate, so that the heat generated by the chip can be more easily taken out of the IGBT device, and the service life and the reliability are improved.

Description

IGBT device and IGBT module

Technical Field

The invention relates to a semiconductor packaging technology, in particular to an IGBT device and an IGBT module.

Background

The most important of the current high-power switches of the IGBT is an important device widely applied to the electronic industry. The IGBT has high frequency, switching and other performances, and has a large share in the future market according to the current development trend in the industrial field, the automobile driving industry and the consumer electronics industry. The IGBT is also called an insulated gate bipolar transistor, and is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor and an insulated gate field effect transistor. Generally, an IGBT device includes an IGBT chip and an FWD chip (freewheeling diode chip), and in general, an IGBT device is packaged as shown in fig. 1 by bonding, adding a lining board, adding a substrate, and sealing and curing, and then heat dissipation is achieved by an external heat dissipation structure on the substrate, and the IGBT device has higher switching efficiency due to continuous improvement in performance, but the heat generation rate is also continuously improved, chinese patent publication No. CN115513073A discloses a power device heat dissipation structure and an assembly method thereof in 12.23.2022, which aims to achieve a higher adaptive heat dissipation effect through a water-cooling plate and a vertical installation manner, chinese patent publication No. CN115514193A discloses a power device and a manufacturing method thereof in 12.23.2022, an air duct design with a closed end and an open end is implemented through an air duct assembly with a closed end, so as to avoid hot air blowing directly into a capacitor, thereby solving the problem of inconsistent air ducts with rectangular turning at one end, and satisfying the requirement of a symmetrical design of a power unit design, and further satisfying the requirement of a more compact ac power module design on a more symmetrical power distribution on a power module installed side. No matter which kind of mode above, although the optimization in the heat dissipation demand has been proposed, to IGBT, its heat production point can not directly dispel the heat, firstly, because the restriction of technology, FWD needs and IGBT chip electric connection, must accomplish through the bonding technique, and the bonding wire is very fragile, just lead to filling of follow-up inside silica gel (as the protection medium) to need to make two chips all have great naked space, just so make the chip heat production position just in time be the central point of whole device, the heat can not obtain the loss the fastest, the radiating efficiency has been influenced greatly.

Disclosure of Invention

In view of the above, a first object of the present invention is to provide an IGBT device.

In order to solve the technical problems, the technical scheme of the invention is as follows:

the utility model provides a IGBT device, includes IGBT chip and FWD chip, its characterized in that: the IGBT chip is mounted on the lower lining plate, the FWD chip is mounted on the upper lining plate, the relay lining plate is arranged between the IGBT chip and the FWD chip, the relay lining plate comprises an upper butt joint layer and a lower butt joint layer, a plurality of upper welding spots are formed on one side of the upper butt joint layer facing the FWD chip, and a plurality of lower welding spots are formed on one side of the lower butt joint layer facing the IGBT chip;

the relay lining plate is internally provided with a heat dissipation flow passage and a heat dissipation interface communicated with the heat dissipation flow passage, and part of the relay lining plate extends out of the device shell so that the heat dissipation interface is exposed outside the shell.

Furthermore, the heat dissipation runner includes sprue and a plurality of runner sections that are formed at the relay liner, each runner section is connected to the sprue, and each runner section is including runner wall, corruption capillary layer and heat dissipation inner chamber, the corruption capillary layer is formed between runner wall and heat dissipation inner chamber, the corruption capillary layer is formed with a plurality of capillary holes, capillary hole and heat dissipation inner chamber intercommunication.

Furthermore, the runner section is obliquely arranged, and one side of the runner section close to the main runner is higher than one side of the runner section far away from the main runner.

Furthermore, a plurality of upper supporting pieces are arranged between the upper lining plate and the relay lining plate, and the upper supporting pieces are electrically connected with the upper lining plate and the relay lining plate; a plurality of lower supporting pieces are arranged between the lower lining plate and the relay lining plate, and the lower supporting pieces are electrically connected with the lower lining plate and the relay lining plate.

Furthermore, an upper welding cavity is formed at the upper welding point, welding materials are arranged in the upper welding cavity, an upper welding bead is distributed in the upper butt joint layer, the upper welding bead is made of heat conduction materials, and the upper welding bead is connected with each upper welding cavity; the welding structure is characterized in that a lower welding cavity is formed at the lower welding point, welding fluxes are arranged in the lower welding cavity, lower welding beads are distributed in the lower butt joint layer and made of heat conduction materials, and the lower welding beads are connected with each lower welding cavity.

Furthermore, the upper welding cavity and the lower welding cavity are respectively provided with an expansion body, and when the expansion body is heated, the expansion body expands to extrude the welding flux to the upper welding point or the lower welding point.

Furthermore, the heat dissipation interface comprises a heat dissipation liquid inlet and a heat dissipation liquid outlet;

go up to be provided with on the welt and divide the liquid runner, be provided with down on the welt and divide the liquid runner down, go up to divide the both ends of liquid runner and connect heat dissipation inlet and heat dissipation liquid outlet respectively, divide the both ends of liquid runner to connect heat dissipation inlet and heat dissipation liquid outlet respectively down.

In order to achieve the second object of the present invention, an IGBT module is provided, which includes the above-mentioned IGBT device, and includes a vertically arranged substrate and a heat sink arranged on the substrate, the device housing is mounted on the substrate through a heat conducting glue and a fixing member, the heat sink is mounted on the heat dissipation interface, and the heat sink is configured to deliver a refrigerant to the heat dissipation interface and recover the refrigerant from the heat dissipation interface.

Furthermore, the base plate and the relay lining plate are perpendicularly arranged, a yielding groove is formed in the base plate, and the relay lining plate penetrates through the yielding groove to be matched with the radiator on the rear side of the base plate.

The technical effects of the invention are mainly reflected in the following aspects: through setting up like this, at first FWD and IGBT chip are established on the relay welt through folding, make bonding point of leading on the chip directly can be through welded mode electrical connection on the welt, the setting of bonding lead has been cancelled, can guarantee the life of chip from an aspect, the solder joint electricity is connected and is compared in bonding lead and have higher intensity, and the mutual superimposed problem of heat that brings, can solve through directly setting up heat dissipation runner on the relay welt, the heat that makes the chip produce is taken over the IGBT device outside more easily, service life and reliability have been improved.

Drawings

FIG. 1: the structure schematic diagram of the traditional IGBT device;

FIG. 2 is a schematic diagram: the IGBT device structure schematic diagram is shown;

FIG. 3: the IGBT device of the invention has a schematic sectional view;

FIG. 4 is a schematic view of: the invention discloses an axial side view angle schematic diagram of an IGBT device;

FIG. 5: the IGBT device of the invention is an explosion schematic diagram;

FIG. 6: the invention relates to an internal structure diagram of a flow channel section in an IGBT device;

FIG. 7: the invention discloses a weld bead part schematic diagram of a relay liner plate in an IGBT device.

Reference numerals are as follows: 101. a device housing; 102. bonding a lead; 103. a busbar terminal; 110. 120, FWD chip; 130. an upper liner plate; 131. an upper support member; 140. a lower liner plate; 141. a lower support; 210. a relay liner; 211. an upper butt joint layer; 212. a lower butt joint layer; 221. welding a welding bead; 2211. an upper welding cavity; 222. a welding bead is put down; 2221. a lower welding cavity; 230. welding flux; 240. an expansion body; 250. invar alloy; 261. a main flow passage; 262. a flow passage section; 2621. a flow channel wall; 2622. corroding the capillary layer; 2623. a heat dissipation inner cavity; 310. a substrate; 311. a yielding groove; 301. a heat dissipation liquid inlet; 302. a heat-dissipating liquid outlet; 321. an upper liquid separation flow channel; 322. and a lower liquid separation flow channel.

Detailed Description

The following detailed description of the embodiments of the present invention is provided in order to make the technical solution of the present invention easier to understand and understand.

Referring to fig. 2-5, an IGBT device includes an IGBT chip 110 and an FWD chip 120, the original IGBT and FWD chips 120 are designed differently, the original chips are respectively disposed on a substrate and then connected by a bonding wire 102, but the present invention is designed as follows, the IGBT device further includes a device housing 101, an upper substrate 130, a relay substrate 210 and a lower substrate 140, the IGBT chip 110 is mounted on the lower substrate 140, the FWD chip 120 is mounted on the upper substrate 130, the relay substrate 210 is disposed between the IGBT chip 110 and the FWD chip 120, the relay substrate 210 includes an upper butt-joint layer 211 and a lower butt-joint layer 212, a plurality of upper solder joints are formed on one side of the upper butt-joint layer 211 facing the FWD chip 120, and a plurality of lower solder joints are formed on one side of the lower butt-joint layer 212 facing the IGBT chip 110; the upper liner plate 130 and the lower liner plate 140 are connected in the same manner as the original, and the chips are fixed on the upper liner plate 140 and the lower liner plate 140, so as to complete the connection of the basic communication interface, and the chips that originally need to be connected by the bonding wires 102 are electrically connected by the solder joints on the relay liner plate 210, it should be noted that fig. 2-5 are to facilitate understanding, the two sealing surfaces of the front and the rear of the device housing are hidden, and the weld bead part is shown in fig. 7, and the specific manner is as follows: an upper welding cavity 2211 is formed at the upper welding point, welding flux 230 is arranged in the upper welding cavity 2211, an upper welding bead 221 is distributed in the upper butt joint layer 211, the upper welding bead 221 is made of a heat conduction material, and the upper welding bead 221 is connected with each upper welding cavity 2211; a lower welding cavity 2221 is formed at the lower welding point, a welding flux 230 is arranged in the lower welding cavity 2221, lower welding beads 222 are distributed in the lower butt joint layer 212, the lower welding beads 222 are made of heat conduction materials, and the lower welding beads 222 are connected with each lower welding cavity 2221. Expansion bodies 240 are further arranged in the upper welding cavity 2211 and the lower welding cavity 2221 respectively, and the expansion bodies 240 expand to extrude the welding flux 230 to the upper welding point or the lower welding point when being heated. By heating the weld bead, the weld bead conducts heat to the corresponding weld chamber, the weld chamber is heated, the expansion body 240 expands to extrude the solder 230, a part of the solder 230 flows out of the solder joint and contacts with the solder joint on the chip, and the welding is completed after cooling, preferably, the relay liner plate 210 is provided with a positioning projection for positioning the chip to ensure that the solder joints correspond to each other, and the step of specifically installing the liner plate is as follows: firstly, installing the IGBT chip 110 on the lower liner plate 140, then installing the relay liner plate 210 on the IGBT chip 110, then installing the FWD chip 120 above the relay liner plate 210, and then installing the upper liner plate 130 on the FWD chip 120, wherein because a large gap still exists between the upper liner plate 130, the lower liner plate 140 and the relay liner plate 210, the structure is not stable enough on the whole, and on the other hand, communication connection is still required among the liner plates, a plurality of upper support members 131 are preferably arranged between the upper liner plate 130 and the relay liner plate 210, and the upper support members 131 are electrically connected with the upper liner plate 130 and the relay liner plate 210; a plurality of lower supporting members 141 are disposed between the lower liner plate 140 and the relay liner plate 210, and the lower supporting members 141 are electrically connected to the lower liner plate 140 and the relay liner plate 210. The welding cavity is mainly composed of a welding cavity part, wherein the welding hole is formed through invar alloy 250, the invar alloy 250 has a lower expansion rate, the shape of the welding hole cannot be greatly changed due to heating, the periphery of the welding hole is coated with an insulating coating and a heat-insulating coating, heat conduction to the inside of a chip is avoided, a welding material In the welding cavity is 52Sn/48In alloy, the melting point of the alloy is 117 ℃, the melting point of the alloy is lower, an expansion body 240 below the welding cavity is set to be Fe-Ni series, fe-Ni-Co series and Fe-Ni-Cr series alloys, the welding flux 230 is melted through thermal expansion, and meanwhile, the welding flux 230 is extruded out, so that welding is realized. And heat is transferred in the weld bead through the heat conduction copper, and external heat is transferred to the solder 230 through the heat conduction copper to melt the solder 230, so that the welding action is realized. Although the cost is increased by the arrangement, compared with the bonding wire 102, the stability is higher, and meanwhile, the two parallel chips can be fixed in a stacking mode, so that the two ends of the chip can be cooled, and a better heat dissipation effect is achieved. So just accomplished the design of welt part, next need derive the heat of welt, welt heat is derived and can have following problem, at first if directly set up the heat dissipation runner, the welt is thinner, the heat dissipation runner if will circulate, then will be through whole welt, but the welt itself needs to pass through the wire, wire and heat dissipation runner will crisscross like this, the heat dissipation runner must not accomplish and lay, and if not inside through the welt, then the radiating effect can't be guaranteed, influence the heat dissipation. Therefore, in the design of the other core part of the distributed hot runner of the present invention, the heat dissipation channel needs to achieve two conditions to achieve a better heat dissipation effect, firstly, the heat dissipation channel needs to extend into the relay liner 210, and secondly, the heat dissipation working medium can flow during the heat dissipation process, in order to achieve this purpose, referring to fig. 5, the heat dissipation channel and the heat dissipation interface communicated with the heat dissipation channel are formed in the relay liner 210, and part of the relay liner 210 extends out of the device housing 101 so that the heat dissipation interface is exposed outside the housing. The heat dissipation channel comprises a main channel 261 and a plurality of channel sections 262 formed on the relay lining board 210, the main channel 261 is connected with each channel section 262, each channel section 262 comprises a channel wall 2621, an erosion capillary layer 2622 and a heat dissipation inner cavity 2623, the erosion capillary layer 2622 is formed between the channel wall 2621 and the heat dissipation inner cavity 2623, the erosion capillary layer 2622 is formed with a plurality of capillary holes, and the capillary holes are communicated with the heat dissipation inner cavity 2623. The runner section 262 is disposed obliquely, and one side of the runner section 262 close to the main runner 261 is higher than one side far away from the main runner 261. As shown in fig. 3, the main channel 261 extends into the interior of the relay liner 210 through the channel section 262, and the channel wall 2621 has an effect of preventing the leakage of the working medium, the working medium is selected from a fluid working medium with a condensation point below-10 degrees celsius, the present invention is preferably R401A or R401B, the working medium can be liquefied under the action of the heat sink and flows through the main channel 261, due to the inclined arrangement of the channel section 262, the liquefied liquid moves towards the interior of the relay liner 210 through the heat dissipation inner cavity 2623, then is gasified and circulates internally through the corrosion capillary layer 2622 under the siphon action, and returns to the main channel 261, so that the working medium of each channel section 262 can be in a "moving" state, and the effect of cold exchange is improved, as shown in fig. 6, the specific design process is as follows: firstly, dividing an area for distribution of a heat dissipation flow channel on a relay lining plate 210, arranging a chute in a corresponding area, taking an alloy pipe, sealing one end of the alloy pipe by stamping, pouring corrosive liquid into the alloy pipe, so as to corrode a corrosion capillary layer 2622 in the alloy pipe, testing the air tightness of the alloy pipe after the corrosion is finished, injecting bonding filler into the chute after the air tightness test is passed, then inserting the alloy pipe for bonding, and simultaneously bonding a prefabricated main flow channel 261 pipe with the alloy pipe, so that the heat dissipation flow channel is ensured to pass through the relay lining plate 210 while being staggered with a communication area signal line, the heat dissipation effect is improved, and the structure of the heat dissipation flow channel on an upper lining plate 130 and a lower lining plate 140 is that the upper surface of the upper lining plate 130 and the lower surface of the lower lining plate 140 are not required to be provided with structures, so that a space for designing the heat dissipation flow channel exists, and the specific arrangement is as follows: the heat dissipation interface comprises a heat dissipation liquid inlet 301 and a heat dissipation liquid outlet 302; go up and be provided with on welt 130 and divide liquid runner 321, be provided with down on the welt 140 and divide liquid runner 322, go up the both ends that divide liquid runner 321 and connect heat dissipation inlet 301 and heat dissipation outlet 302 respectively, divide the both ends of liquid runner 322 to connect heat dissipation inlet 301 and heat dissipation outlet 302 respectively down. The upper liquid separation flow channel 321 is used for dissipating heat of the upper liner plate 130, and the lower liquid separation flow channel 322 is used for dissipating heat of the lower liner plate 140. The bus bar terminals 103 are extended from the upper and

lower substrates

130 and 140 to the upper side of the device case 101.

Referring to fig. 5, an IGBT module includes the above IGBT device, including a vertically arranged substrate 310 and a heat sink arranged on the substrate 310, the device housing 101 is mounted on the substrate 310 through a heat conducting glue and a fixing member, the heat sink is mounted on the heat dissipation interface, and the heat sink is used for conveying a refrigerant to the heat dissipation interface and recovering the refrigerant from the heat dissipation interface. The base plate 310 and the relay liner plate 210 are vertically arranged, the base plate 310 is provided with an abdicating groove 311, and the relay liner plate 210 penetrates through the abdicating groove 311 to be matched with a radiator at the rear side of the base plate 310. The substrate 310 can also have a heat dissipation effect, and can be matched with a heat sink to dissipate heat.

It is understood that the above are only exemplary embodiments of the present invention, and other embodiments of the present invention may be made by using equivalent or equivalent alternatives, which fall within the scope of the present invention.

Claims

1. The utility model provides an IGBT device, includes IGBT chip and FWD chip which characterized in that: the IGBT chip is mounted on the lower lining plate, the FWD chip is mounted on the upper lining plate, the relay lining plate is arranged between the IGBT chip and the FWD chip, the relay lining plate comprises an upper butt joint layer and a lower butt joint layer, a plurality of upper welding spots are formed on one side of the upper butt joint layer facing the FWD chip, and a plurality of lower welding spots are formed on one side of the lower butt joint layer facing the IGBT chip;

a heat dissipation flow channel and a heat dissipation interface communicated with the heat dissipation flow channel are formed in the relay lining plate, and part of the relay lining plate extends out of the device shell so that the heat dissipation interface is exposed outside the shell;

the heat dissipation runner includes sprue and a plurality of runner section that forms in the relay liner, each runner section is connected to the sprue, and each runner section is including runner wall, corruption capillary layer and heat dissipation inner chamber, the corruption capillary layer form in between runner wall and the heat dissipation inner chamber, the corruption capillary layer forms and has a plurality of capillary holes, capillary hole and heat dissipation inner chamber intercommunication.

2. An IGBT device as claimed in claim 1, characterized in that: the runner section sets up just in the slope one side that the runner section is close to the sprue is higher than the one side of keeping away from the sprue.

3. An IGBT device as claimed in claim 1, characterized in that: a plurality of upper supporting pieces are arranged between the upper lining plate and the relay lining plate, and the upper supporting pieces are electrically connected with the upper lining plate and the relay lining plate; a plurality of lower supporting pieces are arranged between the lower lining plate and the relay lining plate, and the lower supporting pieces are electrically connected with the lower lining plate and the relay lining plate.

4. An IGBT device as claimed in claim 1, characterized in that: an upper welding cavity is formed at the upper welding point, welding flux is arranged in the upper welding cavity, an upper welding bead is distributed in the upper butt joint layer and is made of heat conduction material, and the upper welding bead is connected with each upper welding cavity; the welding structure is characterized in that a lower welding cavity is formed at the lower welding point, welding flux is arranged in the lower welding cavity, lower welding beads are distributed in the lower butt joint layer and are made of heat conduction materials, and each lower welding cavity is connected with the lower welding beads.

5. An IGBT device as claimed in claim 4, characterized in that: and the upper welding cavity and the lower welding cavity are respectively provided with an expansion body, and the expansion bodies expand to extrude the solder to the upper welding point or the lower welding point when being heated.

6. An IGBT device according to claim 1, characterized in that: the heat dissipation interface comprises a heat dissipation liquid inlet and a heat dissipation liquid outlet;

7. An IGBT module comprising an IGBT device according to any one of claims 1-6, characterized in that: the device shell is arranged on the substrate through heat conducting glue and a fixing piece, the radiator is arranged on the heat dissipation interface, and the radiator is used for conveying refrigeration working media to the heat dissipation interface and recovering the refrigeration working media from the heat dissipation interface.

8. An IGBT module as claimed in claim 7, characterized in that: the base plate and the relay liner plate are vertically arranged, a yielding groove is formed in the base plate, and the relay liner plate penetrates through the yielding groove to be matched with a radiator on the rear side of the base plate.