CN115799241A - Optical sensor - Google Patents

Abstract

The invention discloses an optical sensor which comprises a substrate, a grid line, a data line, a thin film transistor, an optical sensing element, a common electrode line, a first color resistor and an optical conversion material layer. The gate line is located above the substrate. The data line is located above the substrate. The grid electrode of the thin film transistor is electrically connected with the grid line. The drain electrode of the thin film transistor is electrically connected with the data line. The lower electrode of the light sensing element is electrically connected with the source electrode of the thin film transistor. The common electrode line is located above the substrate and electrically connected to the upper electrode of the photosensitive element. The first color resistor is located above the thin film transistor, and the first color resistor surrounds the light sensing element from a top view. The light conversion material layer is positioned on the first color resist.

Description

Optical sensor

Technical Field

The present invention relates to an optical sensor.

Background

The optical sensor is generally applied to electronic devices such as smart phones, notebook computers or tablet computers. In addition, optical sensors are also used in medical diagnostic tools. For example, an X-ray sensor configured to receive X-rays may convert X-rays passing through human tissue into a visual image. How to provide an optical sensor capable of improving the collimation of visible light in the optical sensing element of the optical sensor to greatly improve the quality of images is one of the problems in the present industry that research and development resources are urgently needed to solve.

Disclosure of Invention

It is therefore an object of the present invention to provide an optical sensor that can solve the above problems.

In order to achieve the above objectives, according to one embodiment of the present invention, an optical sensor includes a substrate, a gate line, a data line, a thin film transistor, a photo sensing element, a common electrode line, a first color resist, and a photo conversion material layer. The gate line is located above the substrate. The data line is located above the substrate. The grid electrode of the thin film transistor is electrically connected with the grid line. The drain electrode of the thin film transistor is electrically connected with the data line. The lower electrode of the light sensing element is electrically connected with the source electrode of the thin film transistor. The common electrode line is located above the substrate and electrically connected to the upper electrode of the photosensitive element. The first color resistor is located above the thin film transistor, and the first color resistor surrounds the light sensing element from a top view. The light conversion material layer is positioned on the first color resist.

In one or more embodiments of the present invention, the first photoresist is a red photoresist.

In one or more embodiments of the present invention, the first photoresist is a blue photoresist.

In one or more embodiments of the present invention, the layer of light-converting material comprises a thallium (Tl) -doped cesium iodide (CsI) material.

In one or more embodiments of the invention, the layer of light conversion material is arranged to be able to convert X-rays to visible light in a wavelength range between 500 and 600 nanometers.

In one or more embodiments of the present invention, the first color resistance has an average transmittance of less than 50% for visible light in a wavelength range.

In one or more embodiments of the present invention, an upper surface of the light conversion material layer directly above the light sensing element is lower than an upper surface of the light conversion material layer directly above the first color resist.

In one or more embodiments of the present invention, an upper surface of the light conversion material layer directly above the light sensing element is higher than an upper surface of the light conversion material layer directly above the first color resist.

In one or more embodiments of the present invention, the light sensor further includes a transparent organic protection layer disposed between the light conversion material layer and the light sensing element.

In one or more embodiments of the present invention, the transparent organic protective layer has a refractive index greater than that of the first color resist.

In one or more embodiments of the present invention, the transparent organic protection layer is at least partially located right above the photo-sensing device and is flush with the upper surface of the first color resist.

In one or more embodiments of the present invention, the transparent organic passivation layer has a first portion directly above the first color resist and a second portion directly above the photo-sensing device.

In one or more embodiments of the present invention, the light sensor further includes an inorganic protective layer disposed between the first color resist and the transparent organic protective layer.

In one or more embodiments of the present invention, the refractive index of the inorganic protective layer is greater than the refractive index of the transparent organic protective layer.

In one or more embodiments of the present invention, the light sensor further comprises a second color resistance located at least partially directly above the light sensing element, the second color resistance having an average transmittance of greater than 90% for visible light in a wavelength range between 500 nm and 600 nm.

In summary, in the light sensor of the present invention, since the light sensor includes the light conversion material layer, the X-rays incident to the light sensor can be converted into visible light in a wavelength range between about 500 nm and about 600 nm. In the optical sensor of the invention, because the first color resistor is positioned above the thin film transistor and surrounds the optical sensing element from a top view, the collimation of the visible light converted by the optical conversion material layer entering the optical sensing element is improved. In the optical sensor of the invention, because the first color resistor and the second color resistor are semitransparent, a manufacturer can repair a damaged circuit more conveniently by using laser. By the optical sensor, the collimation of visible light entering the optical sensing element can be improved so as to improve the image quality and achieve the effect of facilitating circuit repair.

The foregoing is merely illustrative of the problems to be solved, solutions to problems, and effects produced by the present invention, and specific details thereof are set forth in the following description and the accompanying drawings.

Drawings

In order to make the aforementioned and other objects, features, and advantages of the invention, as well as others which will become apparent, reference is made to the following description taken in conjunction with the accompanying drawings in which:

FIG. 1 is a top view of a light sensor according to an embodiment of the present invention;

FIG. 2 is a cross-sectional view of a light sensor according to an embodiment of the present invention;

FIG. 3 is a top view of a light sensor according to an embodiment of the present invention;

FIG. 4 is a cross-sectional view of a light sensor according to an embodiment of the present invention;

FIG. 5 is a top view of a light sensor according to an embodiment of the present invention;

FIG. 6 is a cross-sectional view of a light sensor according to an embodiment of the present invention;

FIG. 7 is a cross-sectional view of a light sensor according to an embodiment of the present invention;

FIG. 8 is a cross-sectional view of a light sensor in accordance with an embodiment of the present invention;

FIG. 9 is a cross-sectional view of a light sensor according to an embodiment of the present invention;

FIG. 10 is a cross-sectional view of a light sensor according to an embodiment of the present invention;

FIG. 11 is a cross-sectional view of a light sensor in accordance with one embodiment of the present invention;

FIG. 12 is a top view of a photosensor repair with a laser according to one embodiment of the present invention;

fig. 13 is a cross-sectional view of a repair photosensor using laser light according to an embodiment of the present invention.

Description of the symbols

100,100A,100B,100C,100D,100E,100F,100R, light sensor

110 thin film transistor

120 light sensing element

121

122 upper electrode

123 lower electrode

130 first color resistor

130G second color resistance

130a,140a,140b,150a Upper surface

140 layer of light-converting material

150 transparent organic protective layer

160 inorganic protective layer

AS channel layer

BP1, BP2, BP3, BP4 barrier layer

G is grid

GSN gate insulation layer

I-I ', II-II', III-III ', IV-IV', V-V ', VI-VI' and section line

L is visible light

LS laser

M1: gate line

M2 source/drain region

M2D drain electrode

M2S source electrode

M3 data line

M4 common electrode wire

O,O _BP1 Opening of the tube

PL protective layer

P _LS Route (1)

PV passivation layer

S is a substrate

Detailed Description

In the following description, for purposes of explanation, numerous implementation details are set forth in order to provide a thorough understanding of various embodiments of the present invention. It should be understood, however, that these implementation details are not to be interpreted as limiting the invention. That is, in some embodiments of the invention, such implementation details are not necessary. In addition, some conventional structures and elements are shown in the drawings in a simplified schematic manner for the sake of simplifying the drawings. The same reference numbers will be used throughout the drawings to refer to the same or like elements.

In the drawings, the thickness of layers, films, panels, regions, etc. have been exaggerated for clarity. Like reference numerals refer to like elements throughout the specification. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected" to another element, there are no intervening elements present. As used herein, "connected" may refer to physically and/or electrically connected. Furthermore, an "electrical connection" or "coupling" may mean that there are other elements between the two elements.

It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a "first element," "component," "region," "layer" or "section" discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms, including "at least one", unless the content clearly indicates otherwise. "or" means "and/or". As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, regions, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, regions integers, steps, operations, elements, components, and/or groups thereof.

Furthermore, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element, as illustrated. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "lower" can include both an orientation of "lower" and "upper," depending on the particular orientation of the figure. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "beneath" may include both an orientation of above and below.

As used herein, "about," "approximately," or "substantially" includes both the stated value and the average value within an acceptable range of deviation of the stated value, as determined by one of ordinary skill in the art, taking into account the particular number of measurements in question and the errors associated with the measurements (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated values, or within ± 30%, ± 20%, ± 10%, ± 5%. Further, as used herein, "about", "approximately" or "substantially" may be selected based on optical properties, etching properties or other properties to select a more acceptable range of deviation or standard deviation, and not to apply one standard deviation to all properties.

Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present invention and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

Please refer to fig. 1. Fig. 1 is a top view of a light sensor 100 according to an embodiment of the present invention. As shown in fig. 1, in the present embodiment, the optical sensor 100 includes a thin film transistor 110, a photo sensing element 120, a first color resistor 130, a gate line M1, a source/drain region M2, a data line M3, a common electrode line M4 and an opening O _BP1 . The thin film transistor 110 includes a gate G. The gate G of the thin film transistor 110 is connected to the gate line M1. The photo-sensing element 120 further includes a PIN diode 121, an upper electrode 122, and a lower electrode 123. The data line M3 is also connected to the thin film transistor 110. The common electrode line M4 is connected to the photo-sensing element 120. In some embodiments, the data line M3 is parallel to the common electrode line M4, and the gate line M1 is perpendicular to the data line M3 and the common electrode line M4. The first color resist 130 surrounds the photo-sensing device 120 and covers the thin film transistor 110 when viewed from the top as shown in fig. 1. The specific structure of the light sensor 100 will be described in more detail below. In some embodiments, the light sensing element 120 may be a Photodiode (photo diode).

Please refer to fig. 2. FIG. 2 is a cross-sectional view of a light sensor 100 based on section line I-I' of FIG. 1, according to an embodiment of the invention. As shown in fig. 2, in the present embodiment, the optical sensor 100 includes a substrate S, a thin film transistor 110, an optical sensing element 120, a first color resist 130, a light conversion material layer 140, a transparent organic protection layer 150, a gate line M1, a source/drain region M2, a data line M3, and a common electrode line M4. AS shown in fig. 2, the thin film transistor 110 includes a gate electrode G, a gate insulating layer GSN, a source/drain region M2, and a channel layer AS. In some embodiments, the gate insulating layer GSN covers the substrate S and the gate electrode G. In some embodiments, the channel layer AS is located on the gate insulation layer GSN. As shown in fig. 2, the source/drain region M2 includes a source M2S and a drain M2D. In some embodiments, the source M2S and the drain M2D are located on the channel layer AS. As shown in fig. 2, the photo sensing element 120 includes a PIN diode 121, an upper electrode 122 and a lower electrode 123. The upper electrode 122 is located on the PIN diode 121. The lower electrode 123 is disposed under the PIN diode 121 and electrically connected to the source M2S. The data line M3 is located above the substrate S and electrically connected to the drain M2D. The common electrode line M4 is located above the substrate S and electrically connected to the upper electrode 122.

Please continue to refer to fig. 2. As shown in fig. 2, in the present embodiment, the transparent organic protection layer 150 is disposed above the thin film transistor 110 and the photo sensing element 120. The first color resistor 130 is located above the thin film transistor 110 and has an opening O. In some embodiments, as shown in fig. 2, the first color resist 130 is located on the transparent organic protective layer 150. As shown in fig. 2, the opening O corresponds to the light sensing element 120. The light conversion material layer 140 is located on the first color resist 130 and fills the opening O. As shown in fig. 2, the first color resist 130 has an upper surface 130a, and the transparent organic protective layer 150 has an upper surface 150a. In some embodiments, as shown in fig. 2, the upper surface 130a of the first color resist 130 is higher than the upper surface 150a of the transparent organic protective layer 150.

In some embodiments, the PIN diode 121 comprises Amorphous Silicon (amophorus Silicon). In the embodiment where the PIN diode 121 includes amorphous silicon, since the amorphous silicon in the PIN diode 121 has a better photoelectric conversion rate for light (e.g., green light) in a wavelength range between about 500 nm and about 600 nm, the light conversion material layer 140 may be disposed to be capable of converting X-rays into visible light L in a wavelength range between about 500 nm and about 600 nm. In some embodiments, the visible light L is green light. In some embodiments, the first color resist 130 may be a translucent color resist such as a red photoresist or a blue photoresist. In some embodiments, the average transmittance of the first color resist 130 for visible light L (e.g., green light) in a wavelength range between about 500 nanometers and about 600 nanometers is less than about 50%. In some embodiments, the material of the light conversion material layer 140 may be, for example, thallium (Tl) -doped cesium iodide (CsI) or other similar materials.

With the foregoing structural configuration, when X-rays from the outside enter the optical sensor 100, the light conversion material layer 140 converts the X-rays into visible light L. The visible light L passing through the first color resistor 130 is absorbed by the first color resistor 130 and cannot reach the light sensing element 120 under the first color resistor 130. The visible light L passing through the opening O can reach the photo sensing element 120. After receiving the visible light L, the photo sensing device 120 generates a current through the PIN diode 121, and the current flows from the photo sensing device 120 to the thin film transistor 110, and then flows to the data line M3 through the thin film transistor 110. Therefore, the optical sensor 100 having the first color resistor 130 corresponding to the opening O of the optical sensing element 120 can increase the collimation of the visible light L received by the optical sensing element 120, thereby improving the quality of the image.

In some embodiments, the material of the substrate S may be, for example, glass or other similar materials. In some embodiments, the material of the gate insulating layer GSN may be, for example, silicon nitride (Si) _x N _y ) Or other similar materials. In some embodiments, the material of the channel layer AS may be, for example, amorphous Silicon (Amorphous Silicon) or other similar materials. In some embodiments, the material of the transparent organic protective layer 150 may be, for example, polytetrafluoroethylene (PFA) or other similar materials.

In some embodiments, the light conversion material layer 140 is formed by, for example, evaporation or other similar methods.

In some embodiments, as shown in fig. 2, the light sensor 100 further includes a barrier layer BP1, a barrier layer BP2, a barrier layer BP3, a barrier layer BP4, a passivation layer PV, and a protection layer PL. The barrier layers BP1, BP2, BP3 and BP4 are arranged as insulating layers between the metal layer and the semiconductor layer. As shown in fig. 2, in some embodiments, the barrier layer BP1 is located between the gate insulating layer GSN and the photo sensing element 120. In some embodiments, the barrier layer BP1 has an opening O _BP1 Arranged to form a PIN diode 121 thereon. In some embodiments, the barrier layer BP2 is located between the thin film transistor 110 and the data line M3 and between the photo sensing element 120 and the common electrode line M4. In some embodiments, the barrier layer BP3 is located between the data line M3 and the transparent organic passivation layer 150 and between the photo sensing device 120 and the common electrode line M4. In some embodiments, the barrier layer BP4 is located between the data line M3 and the transparent organic protection layer 150 and between the common electrode line M4 and the transparent organic protection layer 150. Passivation layer PV configurationSo that the surface of the metal layer is not easy to be oxidized, and the effect of delaying the corrosion of the metal layer is achieved. In some embodiments, as shown in fig. 2, the passivation layer PV is located between the thin film transistor 110 and the data line M3 and between the photo sensing element 120 and the common electrode line M4. The protection layer PL is configured to protect the tft 110 and the photo sensing element 120 located thereunder. In some embodiments, the protection layer PL is located between the thin film transistor 110 and the data line M3 and between the photo sensing element 120 and the common electrode line M4.

Please refer to fig. 3. Fig. 3 is a top view of a light sensor 100A according to an embodiment of the invention. As shown in fig. 3, in the present embodiment, the optical sensor 100A includes a thin film transistor 110, a photo sensing element 120, a first color resistor 130, a gate line M1, a data line M3, a common electrode line M4, and a second color resistor 130G. The first color resist 130 surrounds the photo-sensing device 120 and covers the thin film transistor 110 when viewed from the top as shown in fig. 3. The second color resist 130G covers the light sensing element 120. The specific structure of the light sensor 100A will be described in more detail below.

Please refer to fig. 4. Fig. 4 is a cross-sectional view of a light sensor 100A based on the section lines II-II 'and III-III' of fig. 3 according to an embodiment of the invention. As shown in fig. 4, the arrangement of the structure of the optical sensor 100A is substantially similar to that of the optical sensor 100. The difference between the optical sensor 100A and the optical sensor 100 is that the optical sensor 100A further includes a second color resist 130G, the second color resist 130G is at least partially located right above the photo-sensing element 120, and the optical sensor 100A does not include the transparent organic protection layer 150.

Please continue to refer to fig. 4. As shown in fig. 4, in some embodiments, the first color resistor 130 is located above the thin film transistor 110 and has an opening O. As shown in fig. 4, the opening O corresponds to the light sensing element 120. In some embodiments, as shown in fig. 4, second color resist 130G is located in opening O of first color resist 130. In some embodiments, the material of second resist 130G can be a green photoresist. In some embodiments, second color resist 130G has an average transmittance of greater than about 90% for visible light L (e.g., green light) in a wavelength range between about 500 nanometers and about 600 nanometers.

With the foregoing structural configuration, when X-rays from the outside enter the light sensor 100A, the light conversion material layer 140 converts the X-rays into visible light L. The visible light L passing through the first color resistor 130 is absorbed by the first color resistor 130 and cannot reach the light sensing element 120 located below the first color resistor 130. The visible light L passing through the second color resistor 130G can cross the second color resistor 130G to reach the photo sensing device 120. After receiving the visible light L, the photo sensing device 120 generates a current through the PIN diode 121, and the current flows from the photo sensing device 120 to the thin film transistor 110, and then flows to the data line M3 through the thin film transistor 110. Therefore, the optical sensor 100A provided with the first color resistor 130 and the second color resistor 130G at least partially located right above the optical sensing element 120 can increase the collimation property of the visible light L received by the optical sensing element 120, thereby improving the quality of the image.

Please refer to fig. 5. Fig. 5 is a top view of the optical sensor 100 and the optical sensor 100R according to an embodiment of the present invention. As shown in fig. 5, in the present embodiment, the optical sensor 100 and the optical sensor 100R include a thin film transistor 110, a photo sensing element 120, a first color resistor 130, a gate line M1, a data line M3, and a common electrode line M4. In a top view of the viewing angle as shown in fig. 5, the first color resistor 130 surrounds the light sensing element 120 of the light sensor 100 and covers the thin film transistor 110, and the first color resistor 130 covers the thin film transistor 110 and the light sensing element 120 of the light sensor 100R. The specific structure of the light sensor 100 and the light sensor 100R will be described in more detail below.

Please refer to fig. 6. FIG. 6 is a cross-sectional view of light sensor 100 and light sensor 100R based on section lines IV-IV 'and V-V' of FIG. 5, in accordance with one embodiment of the present invention. As shown in fig. 5 and 6, the arrangement of the optical sensor 100 and the optical sensor 100R is substantially similar to the arrangement of the optical sensor 100 shown in fig. 1 and 2. The difference between the optical sensor 100R in fig. 5 and fig. 6 and the optical sensor 100 is that the first color resistor 130 of the optical sensor 100R covers the thin film transistor 110 and the photo sensing element 120, and the first color resistor 130 of the optical sensor 100 only covers the thin film transistor 110.

In some embodiments, the light sensor 100R may serve as a reference pixel for the light sensor 100. For example, in a panel with a plurality of photosensors 100 and photosensors 100R, the photosensors 100R may be disposed in a peripheral region of the panel to serve as reference pixels of the photosensors 100 located in the center of the panel. As shown in fig. 6, since the first color resist 130 of the light sensor 100R is covered by the whole surface, the visible light L cannot pass through the first color resist 130 of the light sensor 100R and then be received by the light sensing element 120. The light sensor 100R is arranged to be opaque to visible light L as a dark-state pixel in the panel described above, so that the light sensor 100 can be compared with a reference pixel, such as the light sensor 100R, to perform a color correction operation.

With the foregoing structural configuration, when X-rays from the outside enter the light sensor 100, the light conversion material layer 140 converts the X-rays into visible light L. The visible light L passing through the first color resistor 130 is absorbed by the first color resistor 130 and cannot reach the light sensing element 120 located below the first color resistor 130. The visible light L passing through the opening O can reach the photo sensing element 120. After receiving the visible light L, the photo sensing device 120 generates a current through the PIN diode 121, and the current flows from the photo sensing device 120 to the thin film transistor 110, and then flows to the data line M3 through the thin film transistor 110. Therefore, the optical sensor 100 provided with the first color resistor 130 and at least part of the second color resistor 130G located right above the optical sensing element 120 can increase the collimation property of the visible light L received by the optical sensing element 120, thereby improving the quality of the image. And when X-rays from the outside are incident on the light sensor 100R, the light conversion material layer 140 converts the X-rays into visible light L. When the visible light L passes through the first color resistor 130, the visible light L is absorbed by the first color resistor 130 and cannot reach the light sensing element 120 located below the first color resistor 130, so as to serve as a reference pixel of the light sensor 100, thereby achieving the purpose of color correction.

Please refer to fig. 7. Fig. 7 is a cross-sectional view of a light sensor 100B according to an embodiment of the invention. As shown in fig. 7, the structural configuration of the optical sensor 100B is substantially similar to that of the optical sensor 100. The optical sensor 100B is different from the optical sensor 100 in that the transparent organic protection layer 150 of the optical sensor 100B is located on the first color resist 130 and fills the opening O. The transparent organic passivation layer 150 has a first portion directly above the first color resist 130 and a second portion directly above the photo sensor 120. In some embodiments, the refractive index of the transparent organic protective layer 150 is greater than the refractive index of the first color resist 130. As shown in fig. 7, the upper surface 130a of the first color resist 130 is higher than the upper surface 150a of the transparent organic passivation layer 150. The light conversion material layer 140 is positioned on the transparent organic protective layer 150 and is configured to convert X-rays to visible light L in a wavelength range between about 500 nanometers and about 600 nanometers.

With the above-mentioned structure configuration, the light sensor 100B provided with the transparent organic protection layer 150 on the first color resistor 130 can increase the collimation property of the visible light L received by the light sensing element 120, thereby improving the image quality.

Please refer to fig. 8. Fig. 8 is a cross-sectional view of a light sensor 100C according to an embodiment of the present invention. As shown in fig. 8, the structural configuration of the optical sensor 100C is substantially similar to that of the optical sensor 100B. The optical sensor 100C is different from the optical sensor 100B in that the optical sensor 100C further includes an inorganic protective layer 160. The inorganic protective layer 160 is located between the first color resist 130 and the transparent organic protective layer 150. The transparent organic protection layer 150 is disposed on the inorganic protection layer 160 and fills the opening O of the first color resist 130.

In some embodiments, as shown in fig. 8, the refractive index of the inorganic protective layer 160 is greater than the refractive index of the transparent organic protective layer 150. In some embodiments, the refractive index of the inorganic protective layer 160 is greater than the refractive index of the transparent organic protective layer 150 and the refractive index of the first color resist 130, and the refractive index of the transparent organic protective layer 150 is greater than the refractive index of the first color resist 130. Since the difference between the refractive index of the inorganic protection layer 160 and the refractive index of the first color resistor 130 is larger than the difference between the refractive index of the transparent organic protection layer 150 and the refractive index of the first color resistor 130, when the visible light L enters the inorganic protection layer 160 from the transparent organic protection layer 150 and reaches the first color resistor 130, the visible light L can be reflected by the first color resistor 130 and received by the photo sensor 120.

With the foregoing structural configuration, when X-rays from the outside enter the optical sensor 100C, the light conversion material layer 140 converts the X-rays into visible light L. Since the refractive index of the inorganic protection layer 160 is greater than the refractive index of the transparent organic protection layer 150, and the refractive index of the transparent organic protection layer 150 is greater than the refractive index of the first color resist 130, the visible light L entering the inorganic protection layer 160 from the transparent organic protection layer 150 and reaching the first color resist 130 is reflected by the first color resist 130 and reaches the photo sensing element 120 located below the first color resist 130. The visible light L passing through the opening O can reach the photo sensing element 120. After receiving the visible light L, the photo sensing device 120 generates a current through the PIN diode 121, and the current flows from the photo sensing device 120 to the thin film transistor 110, and then flows to the data line M3 through the thin film transistor 110. Therefore, the optical sensor 100C provided with the transparent organic protection layer 150 on the first color resistor 130 can increase the collimation of the visible light L received by the optical sensing element 120, thereby improving the quality of the image.

In some embodiments, the material of the inorganic protective layer 160 may be, for example, silicon nitride (Si) _x N _y ) Or other similar materials.

Please refer to fig. 9. Fig. 9 is a cross-sectional view of a light sensor 100D according to an embodiment of the present invention. As shown in fig. 9, the structural configuration of the optical sensor 100D is substantially similar to that of the optical sensor 100. The light sensor 100D is different from the light sensor 100 in that the upper surface 130a of the first color resist 130 in the light sensor 100D is flush with the upper surface 150a of the transparent organic protective layer 150. In other words, in the present invention, the upper surface 130a may be higher than the upper surface 150a (as shown in fig. 2), and the upper surface 130a may be lower than the upper surface 150a (as shown in fig. 7).

Please refer to fig. 10. Fig. 10 is a cross-sectional view of a light sensor 100E according to an embodiment of the present invention. As shown in fig. 10, the structural configuration of the optical sensor 100E is substantially similar to that of the optical sensor 100. The light sensor 100E is different from the light sensor 100 in that the transparent organic protective layer 150 of the light sensor 100E is located in the opening O of the first color resist 130, and the light conversion material layer 140 of the light sensor 100E has an upper surface 140a and an upper surface 140b located at different heights. In some embodiments, the upper surface 140a is located directly above the first color resist 130, and the upper surface 140b is located directly above the light sensing element 120. As shown in fig. 10, the first color resist 130 of the light sensor 100E has an upper surface 130a, and the transparent organic protective layer 150 has an upper surface 150a. In some embodiments, as shown in fig. 10, the upper surface 130a of the first color resist 130 is higher than the upper surface 150a of the transparent organic protective layer 150.

In some embodiments, as shown in fig. 10, upper surface 140b is lower than upper surface 140a. Since the upper surface 140a and the upper surface 140b have a difference in height, the visible light L can pass through a special morphology (morphology) generated by the upper surface 140a and the upper surface 140b and located on the surface of the light conversion material layer 140 to achieve the purpose of forming a pixelated scintillator (pixilated scintillator), and thus the visible light L can be more easily received by the photo sensing element 120.

With the foregoing structural configuration, when X-rays from the outside enter the optical sensor 100E, the light conversion material layer 140 converts the X-rays into visible light L. Since the upper surface 140b is lower than the upper surface 140a, the visible light L is more easily collected to reach the first color resist 130 and the transparent organic protection layer 150, and then reach the photo sensing element 120. After receiving the visible light L, the photo sensing device 120 generates a current through the PIN diode 121, and the current flows from the photo sensing device 120 to the thin film transistor 110, and then flows to the data line M3 through the thin film transistor 110. Thus, the optical sensor 100E provided with the light conversion material layer 140 having the surface height variation can increase the collimation property of the visible light L received by the light sensing element 120, thereby improving the quality of the image.

Please refer to fig. 11. Fig. 11 is a cross-sectional view of a light sensor 100F according to an embodiment of the present invention. As shown in fig. 11, the structural configuration of the optical sensor 100F is substantially similar to that of the optical sensor 100E. The optical sensor 100F is different from the optical sensor 100E in that the transparent organic protective layer 150 of the optical sensor 100F fills the opening O of the first color resist 130, and the transparent organic protective layer 150 protrudes with respect to the first color resist 130. As shown in fig. 11, the light conversion material layer 140 of the light sensor 100F has an upper surface 140a and an upper surface 140b located at different heights, and the upper surface 140a is located directly above the first color resist 130, and the upper surface 140b is located directly above the light sensing element 120. As shown in fig. 11, the first color resist 130 of the light sensor 100F has an upper surface 130a, and the transparent organic protective layer 150 has an upper surface 150a. In some embodiments, as shown in fig. 11, the upper surface 130a of the first color resist 130 is lower than the upper surface 150a of the transparent organic protection layer 150.

In some embodiments, as shown in fig. 11, the upper surface 140b is higher than the upper surface 140a. Since the upper surface 140a and the upper surface 140b have a difference in height, the visible light L can pass through a special morphology (morphology) generated by the upper surface 140a and the upper surface 140b and located on the surface of the light conversion material layer 140 to achieve the purpose of forming a pixelated scintillator (pixilated scintillator), and thus the visible light L can be more easily received by the photo sensing element 120.

With the foregoing structural configuration, when X-rays from the outside enter the optical sensor 100F, the light conversion material layer 140 converts the X-rays into visible light L. Since the upper surface 140b is higher than the upper surface 140a, the visible light L is more easily collected to reach the first color resist 130 and the transparent organic protection layer 150, and then reach the photo sensing element 120. After receiving the visible light L, the photo sensing device 120 generates a current through the PIN diode 121, and the current flows from the photo sensing device 120 to the thin film transistor 110, and then flows to the data line M3 through the thin film transistor 110. Thus, the optical sensor 100F provided with the light conversion material layer 140 having the surface height variation can increase the collimation property of the visible light L received by the light sensing element 120, thereby improving the quality of the image.

Please refer to fig. 12 and fig. 13. Fig. 12 is a top view of a light sensor 100 repaired with a laser LS in accordance with an embodiment of the present invention. FIG. 13 is a cross-sectional view of a laser LS repair photosensor 100 based on section line VI-VI' of FIG. 12, in accordance with one embodiment of the present invention. Since the configuration of the optical sensor 100 in fig. 12 and 13 is the same as that of the optical sensor 100 in fig. 1 and 2, the following description is not repeated for optical transmissionThe elements of sensor 100 are described in detail. As shown in fig. 12 and 13, when the photo sensor 100 is damaged due to a failure caused by a problem (e.g., a leakage problem) between elements, for example, when the pixels of the panel cannot display normally due to an abnormal condition of the tft 110 and the photo sensing element 120, a manufacturer may use the laser LS to follow the path P from the tft 110 to the photo sensing element 120 _LS An operation of repairing the circuit of the optical sensor 100 is performed. The operation of the repair circuit of the optical sensor 100 shown in fig. 12 and 13 can be similarly applied to the optical sensors 100A to 100F and the optical sensor 100R. Since the light sensor 100, the light sensors 100A to 100F, and the light sensor 100R are provided with the translucent first color resist 130 and/or the second color resist 130G, the manufacturer can observe the state inside thereof, so that the manufacturer can perform the operation of repairing the circuit directly for the portion where the problem occurs by using the laser LS.

As is apparent from the above detailed description of the embodiments of the present invention, in the light sensor of the present invention, since the light sensor includes the light conversion material layer, the X-ray incident to the light sensor can be converted into the visible light in the wavelength range between about 500 nm and about 600 nm. In the optical sensor of the invention, because the first color resistor is positioned above the thin film transistor and surrounds the optical sensing element from a top view, the collimation property of the visible light converted by the optical conversion material layer entering the optical sensing element is improved. In the optical sensor of the invention, because the first color resistor and the second color resistor are semitransparent, a manufacturer can repair a damaged circuit more conveniently by using laser. By the optical sensor, the collimation of visible light entering the optical sensing element can be improved so as to improve the image quality and achieve the effect of facilitating circuit repair.

While the invention has been described in conjunction with the above embodiments, it is not intended to limit the invention, and various modifications and alterations may be made therein by those skilled in the art without departing from the spirit and scope of the invention.

Claims (15)

1. A light sensor, comprising:

a substrate;

a gate line over the substrate;

a data line positioned above the substrate;

a thin film transistor, wherein the grid electrode of the thin film transistor is electrically connected with the grid line, and the drain electrode of the thin film transistor is electrically connected with the data line;

the lower electrode of the light sensing element is electrically connected with the source electrode of the thin film transistor;

a common electrode line located above the substrate and electrically connected to the upper electrode of the optical sensing element;

a first color resistor located above the thin film transistor and surrounding the light sensing element from a top view; and

and the light conversion material layer is positioned on the first color resistor.

2. The light sensor of claim 1, wherein the first color resist is red photoresist.

3. The light sensor of claim 1, wherein the first color resist is a blue photoresist.

4. The light sensor of claim 1, wherein the layer of light conversion material comprises a thallium doped cesium iodide material.

5. The light sensor of claim 1, wherein the layer of light conversion material is configured to be capable of converting X-rays to visible light in a wavelength range between 500 nanometers and 600 nanometers.

6. The light sensor of claim 5, wherein the first color resistance has an average transmittance of less than 50% for the visible light within the wavelength range.

7. The light sensor of claim 1, wherein a top surface of the layer of light conversion material directly above the light sensing element is lower than a top surface of the layer of light conversion material directly above the first color resist.

8. The light sensor of claim 1, wherein an upper surface of the light conversion material layer directly above the light sensing element is higher than an upper surface of the light conversion material layer directly above the first color resist.

9. The light sensor of claim 1, further comprising a transparent organic protective layer disposed between the light conversion material layer and the light sensing element.

10. The light sensor of claim 9, wherein the transparent organic protective layer has a refractive index greater than a refractive index of the first color resist.

11. The light sensor of claim 9, wherein the transparent organic protective layer is at least partially directly over the light sensing element and is flush with the upper surface of the first color resist.

12. The light sensor of claim 9, wherein the transparent organic passivation layer has a first portion directly over the first color resist and a second portion directly over the light sensing element.

13. The light sensor of claim 9, further comprising an inorganic protective layer disposed between the first color resist and the transparent organic protective layer.

14. The light sensor of claim 13, wherein the inorganic protective layer has a refractive index greater than the transparent organic protective layer.

15. The light sensor of claim 1, further comprising a second color resistance at least partially directly over the light sensing element, the second color resistance having an average transmittance of greater than 90% for visible light in a wavelength range between 500 nanometers and 600 nanometers.

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