CN111490057B - Photosensitive element and display device - Google Patents

Photosensitive element and display device Download PDF

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Publication number
CN111490057B
CN111490057B CN202010171115.2A CN202010171115A CN111490057B CN 111490057 B CN111490057 B CN 111490057B CN 202010171115 A CN202010171115 A CN 202010171115A CN 111490057 B CN111490057 B CN 111490057B
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photosensitive
photosensitive layer
output electrode
electrode
layer
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CN111490057A (en
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苏志中
陈信学
陈亦伟
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AU Optronics Corp
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AU Optronics Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes

Abstract

The invention discloses a photosensitive element which comprises a first substrate and a photosensitive structure. The photosensitive structure comprises a first output electrode, a first photosensitive layer, an input electrode, a second photosensitive layer and a second output electrode. The first output electrode is disposed on the first substrate. The first photosensitive layer is arranged on the first output electrode. The input electrode is arranged on the first photosensitive layer and is light-transmitting. The second photosensitive layer is arranged on the input electrode. The second output electrode is arranged on the second photosensitive layer and is light-transmitting. Further, a display device including the above-described photosensitive element is also proposed.

Description

Photosensitive element and display device
Technical Field
The invention relates to a photosensitive element and a display device.
Background
FIG. 1 shows voltage versus signal-to-noise ratio curves for a plurality of photosensitive elements each having a plurality of thicknesses. Specifically, fig. 1 shows the voltage vs. signal-to-noise ratio curves of a plurality of photosensitive elements having photosensitive layers with thicknesses of 3000 angstroms, 4000 angstroms, and 5000 angstroms, respectively. Referring to FIG. 1, if the thickness of the photosensitive layer is adjusted to a preferred thickness (e.g., 3000 angstroms), the photosensitive element has a high SNR when the photosensitive element is operated under a power saving bias (e.g., < 2.5V). However, there is a limit to the extent of improving the signal-to-noise ratio by adjusting the thickness of the photosensitive layer. In addition, if a plurality of photosensitive layers for sensing light beams in a plurality of wavelength ranges are stacked into an integrated photosensitive layer, although the integrated photosensitive layer can sense light beams in a plurality of wavelength ranges, the integrated photosensitive layer has too thick thickness, resulting in low signal-to-noise ratio.
Disclosure of Invention
The invention provides a photosensitive element with good photosensitive performance.
The invention provides a display device, which comprises a photosensitive element with good photosensitive performance.
The invention discloses a photosensitive element, which comprises a first substrate and at least one photosensitive structure. Each photosensitive structure comprises a first output electrode, a first photosensitive layer, an input electrode, a second photosensitive layer and a second output electrode. The first output electrode is disposed on the first substrate. The first photosensitive layer is arranged on the first output electrode. The input electrode is arranged on the first photosensitive layer and is light-transmitting. The second photosensitive layer is arranged on the input electrode. The second output electrode is arranged on the second photosensitive layer and is light-transmitting.
The display device of the invention comprises the photosensitive element, a plurality of pixels and a plurality of connecting wires. The first substrate is provided with a perspective window, a circuit area and an active area, wherein the circuit area is arranged around the perspective window, and the circuit area is arranged between the active area and the perspective window. The plurality of pixels are arranged in the active area. Each pixel comprises a signal line, an active element and a pixel electrode, wherein the active element is electrically connected with the signal line, and the pixel electrode is electrically connected with the active element. The plurality of connecting wires are arranged in the circuit area. Each wiring is electrically connected with a plurality of signal lines of a plurality of pixels respectively positioned at two opposite sides of the perspective window. At least one photosensitive structure of the photosensitive element is arranged on the circuit area of the first substrate.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
FIG. 1 shows voltage versus signal-to-noise ratio curves for a plurality of photosensitive elements each having a plurality of thicknesses.
Fig. 2 is a schematic top view of a display device 10 according to an embodiment of the invention.
Fig. 3 is a schematic cross-sectional view of a display device 10 according to an embodiment of the invention.
Fig. 4 is a schematic top view of a pixel array substrate 100 according to an embodiment of the invention.
Fig. 5A is a schematic cross-sectional view of a photosensitive element U according to an embodiment of the invention.
Fig. 5B is a schematic top view of a photosensitive structure 500 according to an embodiment of the invention.
Fig. 6 is a schematic cross-sectional view of a photosensitive element U1 according to another embodiment of the present invention.
Fig. 7A is a schematic cross-sectional view of a photosensitive element U2 according to another embodiment of the invention.
FIG. 7B is a schematic top view of a photosensitive structure 500-3 according to another embodiment of the invention.
Wherein, the reference numbers:
10: display device
100: pixel array substrate
110: first substrate
110a: perspective window
110b: line area
110c: active region
200: second substrate
200b, R: region(s)
300: display medium
400: back light source
500. 500-1, 500-2, 500-3: photosensitive structure
510: a first output electrode
520: first photosensitive layer
530: input electrode
540: second photosensitive layer
550: second output electrode
A: electronic component
CL: wiring
d1: a first direction
d2: the second direction
E: pixel electrode
PX: pixel
SL: signal line
S1, S2: side wall
T: active component
U, U1, U2: photosensitive element
I-I': cutting line
Detailed Description
The invention is described in detail below with reference to the drawings and specific examples, but the invention is not limited thereto.
Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connections. Further, "electrically connected" or "coupled" may mean that there are additional elements between the elements.
As used herein, "about", "approximately", or "substantially" includes the stated value and the average value within an acceptable range of deviation of the specified value as determined by one of ordinary skill in the art, taking into account the measurement in question and the specified amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" may mean within one or more standard deviations of the stated value, or within ± 30%, ± 20%, ± 10%, ± 5%. Further, as used herein, "about", "approximately" or "substantially" may be selected based on optical properties, etch properties, or other properties, with a more acceptable range of deviation or standard deviation, and not all properties may be applied with one standard deviation.
Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present invention and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Fig. 2 is a schematic top view of a display device 10 according to an embodiment of the invention.
FIG. 2 shows a transparent window 110a, a circuit region 110b and an active region 110c of the display device 10; the other components of the display device 10 are small and fine in size, and the other components omitted from fig. 2 are depicted in fig. 3 and 4 for clarity.
Fig. 3 is a schematic cross-sectional view of a display device 10 according to an embodiment of the invention. Fig. 3 corresponds to the section line i-i' of fig. 2.
Fig. 4 is a schematic top view of a pixel array substrate 100 according to an embodiment of the invention. Fig. 4 corresponds to the region R of fig. 2.
Fig. 3 omits the plurality of pixels PX and the plurality of wirings CL of fig. 4.
Referring to fig. 2, 3 and 4, the display device 10 includes a pixel array substrate 100, a second substrate 200 and a display medium 300 disposed between the pixel array substrate 100 and the second substrate 200. In the embodiment, the display medium 300 may be a non-self-luminous material (e.g., liquid crystal), and the display device 10 may further include a backlight 400 disposed below the pixel array substrate 100. However, the invention is not limited thereto, and according to other embodiments, the display medium 300 may be a self-luminous material (e.g., an organic electroluminescent layer), and the display device 10 may not include the backlight 400.
Referring to fig. 3 and 4, the pixel array substrate 100 includes a first substrate 110. The first substrate 110 has a transparent window 110a, a circuit region 110b and an active region 110c. The circuit region 110b is located around the transparent window 110a, and the circuit region 110b is located between the active region 110c and the transparent window 110 a.
The transparent window 110a or the lower part of the transparent window 110a is used to dispose the electronic component a. In the present embodiment, the electronic component a includes a lens. However, the invention is not limited thereto, and according to other embodiments, the electronic component a may also comprise an earpiece or other components.
In this embodiment, the transparent window 110a may be a transparent material portion of the first substrate 110, and any light blocking pattern of the pixel array substrate 100 is not disposed on the transparent material portion. However, the invention is not limited thereto, and according to other embodiments, the transparent window 110a may also be a through hole of the first substrate 110.
The pixel array substrate 100 includes a plurality of pixels PX and a plurality of wirings CL. A plurality of pixels PX are disposed in the active region 110c of the first substrate 110. Each pixel PX includes a signal line SL, an active device T, and a pixel electrode E. The active device T is electrically connected to the signal line SL, and the pixel electrode E is electrically connected to the active device T. The plurality of wirings CL are disposed in the wiring region 110b of the first substrate 110. Each of the plurality of connection lines CL is electrically connected to a plurality of signal lines SL of the plurality of pixels PX respectively located at two opposite sides S1 and S2 of the transparent window 110 a.
The display device 10 further includes at least one photosensitive structure 500. For example, in the present embodiment, the photosensitive structure 500 may be disposed on the circuit region 110b of the pixel array substrate 100. The region 200b of the second substrate 200 overlapping the circuit region 110b is transparent, so that the photosensitive structure 500 can receive the light beam. However, the invention is not limited thereto, and the photosensitive structure 500 may be disposed at other positions of the display device 10 according to other embodiments.
Fig. 5A is a schematic cross-sectional view of a photosensitive element U according to an embodiment of the invention. Fig. 5B is a schematic top view of a photosensitive structure 500 according to an embodiment of the invention.
Referring to fig. 5A and 5B, the photosensitive element U includes a first substrate 110 and at least one photosensitive structure 500 disposed on the first substrate 110. Each photosensitive structure 500 includes a first output electrode 510, a first photosensitive layer 520, an input electrode 530, a second photosensitive layer 540, and a second output electrode 550. The first output electrode 510 is disposed on the first substrate 110. The first photosensitive layer 520 is disposed on the first output electrode 510. The input electrode 530 is disposed on the first photosensitive layer 520. The second photosensitive layer 540 is disposed on the input electrode 530. The second output electrode 550 is disposed on the second photosensitive layer 540. In brief, the first output electrode 510, the first photosensitive layer 520, the input electrode 530, the second photosensitive layer 540 and the second output electrode 550 are sequentially stacked in a first direction d1, wherein the first direction d1 points away from the first substrate 110.
The first output electrode 510 is light transmissive or opaque. The input electrode 530 and the second output electrode 550 are transparent. In detail, the transmittance of the input electrode 530 and the second output electrode 550 is greater than or equal to 5%. For example, in the present embodiment, the material of the input electrode 530 and the second output electrode 550 may be metal oxide, such as: indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide, or other suitable oxide, or a stack of at least two of the foregoing. However, the invention is not limited thereto, and according to other embodiments, the material of the input electrode 530 and the second output electrode 550 may also be a transparent thin metal, and the thickness of the transparent thin metal may be on the order of nanometers (nm).
In this embodiment, the composition of the first photosensitive layer 520 is substantially the same as that of the second photosensitive layer 540. That is, the light absorption wavelength range of the first photosensitive layer 520 is substantially the same as the light absorption wavelength range of the second photosensitive layer 540. For example, in the present embodiment, the material of the first photosensitive layer 520 and the second photosensitive layer 540 may be Silicon-rich oxide (SRO); the light absorption wavelength range of the first photosensitive layer 520 and the light absorption wavelength range of the second photosensitive layer 540 can be a visible light wavelength range (about 380 nm to 780 nm) or an infrared light wavelength range (about 780 nm to 2500 nm), but the invention is not limited thereto.
The input electrode 530 is used for receiving a signal, so that a bias voltage is provided between the input electrode 530 and the first output electrode 510 and between the input electrode 530 and the second output electrode 550. Under the condition that there is a bias voltage between the input electrode 530 and the first output electrode 510 and between the input electrode 530 and the second output electrode 550, when the photosensitive structure 500 is irradiated by the light beam to be sensed, the first output electrode 510 and the second output electrode 550 can output a photocurrent corresponding to the intensity of the light.
In the present embodiment, the first output electrode 510 and the second output electrode 550 may be selectively electrically connected. The photocurrent output by the photosensitive structure 500 may be the sum of the photocurrent output by the first output electrode 510 and the photocurrent output by the second output electrode 550. That is, by using the structure that the transparent input electrode 530 is sandwiched between two output electrodes (i.e., the first output electrode 510 and the second output electrode 550), the photocurrent output by the photosensitive structure 500 can be increased under the condition that the photosensitive layers (i.e., the first photosensitive layer 520 and the second photosensitive layer 540) have a better thickness. Therefore, the light sensing performance of the light sensing element U can be further improved.
It should be noted that the following embodiments follow the reference numerals and parts of the contents of the foregoing embodiments, wherein the same reference numerals are used to indicate the same or similar elements, and the description of the same technical contents is omitted. For the description of the omitted portions, reference may be made to the foregoing embodiments, which will not be repeated below.
Fig. 6 is a schematic cross-sectional view of a photosensitive element U1 according to another embodiment of the invention. The photosensitive element U1 of fig. 6 is similar to the photosensitive element U of fig. 5A, and the difference therebetween is that: the photosensitive element U1 includes a plurality of photosensitive structures 500-1, 500-2, and the plurality of photosensitive structures 500-1, 500-2 are respectively used for sensing light beams with different wavelength ranges.
Referring to fig. 6, in detail, the photosensitive element U1 includes a plurality of photosensitive structures 500. The first output electrode 510, the first photosensitive layer 520, the input electrode 530, the second photosensitive layer 540, and the second output electrode 550 of each photosensitive structure 500 are stacked in the first direction d 1. The plurality of photosensitive structures 500 includes a first photosensitive structure 500-1 and a second photosensitive structure 500-2 arranged in a second direction d2, wherein the first direction d1 and the second direction d2 are staggered.
The first photosensitive structure 500-1 and the second photosensitive structure 500-2 are used for sensing light beams with different wavelength ranges. The first photosensitive layer 520 of the first photosensitive structure 500-1 and the second photosensitive layer 540 of the first photosensitive structure 500-1 have the same first light absorption wavelength range, the first photosensitive layer 520 of the second photosensitive structure 500-2 and the second photosensitive layer 540 of the second photosensitive structure 500-2 have the same second light absorption wavelength range, and the first light absorption wavelength range and the second light absorption wavelength range are different. For example, in the present embodiment, the first light absorption wavelength range may be a visible light wavelength range (about between 380 nm and 780 nm), and the second light absorption wavelength range may be an infrared light wavelength range (about between 780 nm and 2500 nm), but the invention is not limited thereto.
The first photosensitive layer 520 of the first photosensitive structure 500-1 and the second photosensitive layer 540 of the first photosensitive structure 500-1 have the same first composition, and the first photosensitive layer 520 of the second photosensitive structure 500-2 and the second photosensitive layer 540 of the second photosensitive structure 500-2 have the same second composition, and the first composition is different from the second composition. For example, in the present embodiment, the first component and the second component both comprise Silicon-rich oxide (SRO), but the Silicon content of the first component is different from the Silicon content of the second component, and/or the oxygen content of the first component is different from the oxygen content of the second component. The first component is different from the second component, and the refractive index of the first component is different from the refractive index of the second component. For example, in the embodiment, the refractive index of the first component may be between 1.4 and 3.2, and the refractive index of the second component may be between 3.2 and 4.2, but the invention is not limited thereto.
In addition to the advantages of the photosensitive element U, the photosensitive element U1 including the first photosensitive structure 500-1 and the second photosensitive structure 500-2 can also sense a plurality of light beams with different wavelength ranges.
Fig. 7A is a schematic cross-sectional view of a photosensitive element U2 according to another embodiment of the invention. FIG. 7B is a schematic top view illustrating a photosensitive structure 500-3 according to another embodiment of the invention. The photosensitive element U2 of fig. 7A is similar to the photosensitive element U of fig. 5A, and the difference therebetween is that: the photosensitive structure 500-3 of the photosensitive element U2 is different from the photosensitive structure 500 of the photosensitive element U.
Referring to fig. 7A and 7B, in the present embodiment, the absorption wavelength range of the first photosensitive layer 520 of the photosensitive structure 500-3 is different from the absorption wavelength range of the second photosensitive layer 540 of the photosensitive structure 500-3. For example, the light-absorbing wavelength range of the first photosensitive layer 520 of the photosensitive structure 500-3 can be visible light wavelength range (about 380 nm to 780 nm), and the light-absorbing wavelength range of the second photosensitive layer 540 of the photosensitive structure 500-3 can be infrared light wavelength range (about 780 nm to 2500 nm).
In this embodiment, the composition of the first photosensitive layer 520 of the photosensitive structure 500-3 is different from that of the second photosensitive layer 540 of the photosensitive structure 500-3, and the refractive index of the first photosensitive layer 520 of the photosensitive structure 500-3 is different from that of the second photosensitive layer 540 of the photosensitive structure 500-3. For example, in the present embodiment, the refractive index of the first photosensitive layer 520 of the photosensitive structure 500-3 can be between 1.4 and 3.2; the refractive index of the second photosensitive layer 540 of the photosensitive structure 500-3 can be between 3.2 and 4.2, but the invention is not limited thereto.
In the present embodiment, the first photosensitive layer 520 is located between the second photosensitive layer 540 and the first substrate 110. That is, the second photosensitive layer 540 for sensing infrared light is disposed above the first photosensitive layer 520 for sensing visible light.
In the present embodiment, the first output electrode 510 and the second output electrode 550 of the photosensitive structure 500-3 are electrically independent. The intensity of the visible light received by the photosensitive structure 500-3 can be determined according to the magnitude of the photocurrent output by the first output electrode 510. The intensity of the infrared light received by the photo-sensing structure 500-3 can be determined according to the magnitude of the photocurrent output by the second output electrode 550.
With a preferred thickness of the photosensitive layer (i.e., the first photosensitive layer 520 and/or the second photosensitive layer 540), the photosensitive element U2 is integrated with the function of sensing visible light and infrared light. Moreover, since the first photosensitive layer 520 and the second photosensitive layer 540 with different absorption wavelength ranges are stacked in the vertical direction (i.e., the first direction d 1), the photosensitive element U2 has an advantage of small installation area.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention.

Claims (9)

1. A photosensitive element, comprising:
a first substrate; and
at least one photosensitive structure, wherein each of the at least one photosensitive structure comprises:
a first output electrode disposed on the first substrate;
a first photosensitive layer disposed on the first output electrode;
an input electrode arranged on the first photosensitive layer and transmitting light;
a second photosensitive layer disposed on the input electrode; and
a second output electrode arranged on the second photosensitive layer and transmitting light; wherein
A first bias voltage is provided between the input electrode and the first output electrode, and a second bias voltage is provided between the input electrode and the second output electrode.
2. The photosensitive element of claim 1, wherein the composition of the first photosensitive layer is the same as the composition of the second photosensitive layer, and the first output electrode is electrically connected to the second output electrode.
3. The photosensitive element of claim 1, wherein the first photosensitive layer has a light absorption wavelength range identical to that of the second photosensitive layer, and the first output electrode is electrically connected to the second output electrode.
4. The photosensitive element of claim 1, wherein the composition of the first photosensitive layer is different from the composition of the second photosensitive layer, and the first output electrode is electrically independent from the second output electrode.
5. The photosensitive element of claim 1, wherein the first photosensitive layer has a different absorption wavelength range from the second photosensitive layer, and the first output electrode is electrically independent of the second output electrode.
6. The photosensitive element of claim 1, wherein the first output electrode, the first photosensitive layer, the input electrode, the second photosensitive layer and the second output electrode are stacked in a first direction, the at least one photosensitive structure comprises a first photosensitive structure and a second photosensitive structure, the first photosensitive structure and the second photosensitive structure are arranged in a second direction, the first direction and the second direction are staggered, the first photosensitive layer of the first photosensitive structure and the second photosensitive layer of the first photosensitive structure have a same first composition, the first photosensitive layer of the second photosensitive structure and the second photosensitive layer of the second photosensitive structure have a same second composition, and the first composition and the second composition are different.
7. The photosensitive element of claim 1, wherein the first output electrode, the first photosensitive layer, the input electrode, the second photosensitive layer and the second output electrode are stacked in a first direction, the at least one photosensitive structure comprises a first photosensitive structure and a second photosensitive structure, the first photosensitive structure and the second photosensitive structure are arranged in a second direction, the first direction and the second direction are staggered, the first photosensitive layer of the first photosensitive structure and the second photosensitive layer of the first photosensitive structure have a same first light absorption wavelength range, the first photosensitive layer of the second photosensitive structure and the second photosensitive layer of the second photosensitive structure have a same second light absorption wavelength range, and the first light absorption wavelength range and the second light absorption wavelength range are different.
8. The photosensitive element of claim 1, wherein the first photosensitive layer is located between the second photosensitive layer and the first substrate, the second photosensitive layer is used to absorb an infrared light, and the first photosensitive layer is used to absorb a visible light.
9. A display device, comprising:
the photosensitive element according to any one of claims 1 to 8, wherein the first substrate has a transparent window, a circuit region and an active region, the circuit region is located around the transparent window, and the circuit region is located between the active region and the transparent window;
a plurality of pixels disposed in the active region, wherein each of the pixels comprises a signal line, an active device and a pixel electrode, the active device is electrically connected to the signal line, and the pixel electrode is electrically connected to the active device; and
and a plurality of connecting wires arranged in the circuit area, wherein each of the connecting wires is electrically connected with a plurality of signal wires of the pixels respectively positioned at two opposite sides of the perspective window, and the at least one photosensitive structure is arranged on the circuit area.
CN202010171115.2A 2019-09-11 2020-03-12 Photosensitive element and display device Active CN111490057B (en)

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