TWI706553B - Light sensor and display apparatus - Google Patents

Abstract

A light sensor including a first substrate and a light sensing structure is provided. The light sensing structure includes a first output electrode, a first light sensing layer, an input electrode, a second light sensing layer and a second output electrode. The first output electrode is disposed on the first substrate. The first light sensing layer is disposed on the first output electrode. The input electrode is disposed on the first light sensing layer, and the input electrode is transparent. The second light sensing layer is disposed on the input electrode. The second output electrode is disposed on the second light sensing layer, and the second output electrode is transparent. Moreover, a display apparatus including the light sensor is also provided.

Description

Photosensitive element and display device

The invention relates to a photosensitive element and a display device.

FIG. 1 shows the relationship between the voltage and the signal-to-noise ratio of a plurality of photosensitive elements each having various thicknesses. Specifically, FIG. 1 shows the relationship between the voltage and the signal-to-noise ratio of a plurality of photosensitive elements with the thickness of the photosensitive layer of 3000 angstroms and 4000 Egypt and 5000 angstroms respectively. Please refer to Figure 1. If the thickness of the photosensitive layer is adjusted to a better thickness (for example: 3000 angstroms), the photosensitive element is operated under a power-saving bias (for example:> 2.5V), the photosensitive element has high signal noise ratio. However, the range of improving the signal-to-noise ratio by adjusting the thickness of the photosensitive layer is limited. In addition, if multiple photosensitive layers for sensing light beams in multiple wavelength ranges are stacked to form an integrated photosensitive layer, although the integrated photosensitive layer can sense light beams in multiple wavelength ranges, the thickness of the integrated photosensitive layer is too thick. This results in a low signal-to-noise ratio.

The invention provides a photosensitive element with good photosensitive performance.

The invention provides a display device including a photosensitive element with good photosensitive performance.

A photosensitive element of the present invention includes a first substrate and at least one photosensitive structure. Each photosensitive structure includes a first output electrode, a first photosensitive layer, an input electrode, a second photosensitive layer, and a second output electrode. The first output electrode is arranged on the first substrate. The first photosensitive layer is disposed on the first output electrode. The input electrode is arranged on the first photosensitive layer and transmits light. The second photosensitive layer is arranged on the input electrode. The second output electrode is arranged on the second photosensitive layer and transmits light.

A display device of the present invention includes the aforementioned photosensitive element, a plurality of pixels, and a plurality of wires. The first substrate has a see-through window, a circuit area and an active area. The circuit area is located around the see-through window, and the circuit area is located between the active area and the see-through window. Multiple pixels are arranged in the active area. Each pixel includes a signal line, an active element, and a pixel electrode. The active element is electrically connected to the signal line, and the pixel electrode is electrically connected to the active element. Multiple wirings are arranged in the line area. Each wire is electrically connected to a plurality of signal wires of a plurality of pixels located on opposite sides of the perspective window. At least one photosensitive structure of the photosensitive element is disposed on the circuit area of the first substrate.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

Reference will now be made in detail to the exemplary embodiments of the present invention, and examples of the exemplary embodiments are illustrated in the accompanying drawings. Whenever possible, the same component symbols are used in the drawings and descriptions to indicate the same or similar parts.

It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected" to another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements. As used herein, "connected" can refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that there are other elements between two elements.

As used herein, "about", "approximately", or "substantially" includes the stated value and the average value within the acceptable deviation range of the specific value determined by a person of ordinary skill in the art, taking into account the measurement in question and the The specific amount of measurement-related error (ie, the limitation of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, the "about", "approximately" or "substantially" used herein can select a more acceptable range of deviation or standard deviation based on optical properties, etching properties, or other properties, instead of using one standard deviation for all properties .

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of related technologies and the present invention, and will not be interpreted as idealized or excessive The formal meaning, unless explicitly defined as such in this article.

FIG. 2 is a schematic top view of a display device 10 according to an embodiment of the invention.

FIG. 2 depicts the perspective window 110a, the wiring area 110b, and the active area 110c of the display device 10; other components of the display device 10 are small and delicate in size. For clarity, other components omitted in FIG. 2 are depicted in FIG. 3 and Figure 4.

3 is a schematic cross-sectional view of a display device 10 according to an embodiment of the invention. Figure 3 corresponds to the section line Ι-Ι' of Figure 2.

4 is a schematic top view of a pixel array substrate 100 according to an embodiment of the invention. Figure 4 corresponds to the area R of Figure 2.

FIG. 3 omits the plurality of pixels PX and the plurality of lines CL in FIG. 4.

2, 3, and 4, the display device 10 includes a pixel array substrate 100, a second substrate 200, and a display medium 300 disposed between the pixel array substrate 100 and the second substrate 200. In this embodiment, the display medium 300 may be a non-self-luminous material (for example, liquid crystal), and the display device 10 may further include a backlight source 400 disposed under the pixel array substrate 100. However, the present invention is not limited to this. According to other embodiments, the display medium 300 may also be a self-luminous material (for example, an organic electroluminescent layer), and the display device 10 may not include the backlight 400.

Please refer to FIGS. 3 and 4, the pixel array substrate 100 includes a first substrate 110. The first substrate 110 has a see-through window 110a, a circuit area 110b, and an active area 110c. The line area 110b is located around the see-through window 110a, and the line area 110b is located between the active area 110c and the see-through window 110a.

The electronic component A is arranged in or under the see-through window 110a. In this embodiment, the electronic component A includes a lens. However, the present invention is not limited to this. According to other embodiments, the electronic component A may also include an earpiece or other components.

In this embodiment, the see-through window 110a may be a light-transmitting material portion of the first substrate 110, and any light-blocking pattern of the pixel array substrate 100 is not provided on the light-transmitting material portion. However, the present invention is not limited to this. According to other embodiments, the see-through window 110 a may also be a through hole of the first substrate 110.

The pixel array substrate 100 includes a plurality of pixels PX and a plurality of wires CL. A plurality of pixels PX are disposed in the active area 110c of the first substrate 110. Each pixel PX includes a signal line SL, an active device T and a pixel electrode E. The active device T is electrically connected to the signal line SL, and the pixel electrode E is electrically connected to the active device T. A plurality of wires CL are provided in the circuit area 110b of the first substrate 110. Each of the plurality of wires CL is electrically connected to a plurality of signal wires SL of a plurality of pixels PX located on opposite sides S1, S2 of the see-through window 110a.

The display device 10 further includes at least one photosensitive structure 500. For example, in this embodiment, the photosensitive structure 500 may be disposed on the circuit area 110 b of the pixel array substrate 100. The area 200b of the second substrate 200 overlapping the circuit area 110b is light-transmissive, so that the photosensitive structure 500 can receive the light beam. However, the present invention is not limited to this. According to other embodiments, the photosensitive structure 500 may also be disposed in other positions of the display device 10.

5A is a schematic cross-sectional view of a photosensitive element U according to an embodiment of the invention. FIG. 5B is a schematic top view of a photosensitive structure 500 according to an embodiment of the invention.

Referring to FIGS. 5A and 5B, the photosensitive element U includes a first substrate 110 and at least one photosensitive structure 500 disposed on the first substrate 110. Each photosensitive structure 500 includes a first output electrode 510, a first photosensitive layer 520, an input electrode 530, a second photosensitive layer 540, and a second output electrode 550. The first output electrode 510 is disposed on the first substrate 110. The first photosensitive layer 520 is disposed on the first output electrode 510. The input electrode 530 is disposed on the first photosensitive layer 520. The second photosensitive layer 540 is disposed on the input electrode 530. The second output electrode 550 is disposed on the second photosensitive layer 540. In short, the first output electrode 510, the first photosensitive layer 520, the input electrode 530, the second photosensitive layer 540, and the second output electrode 550 are sequentially stacked in a first direction d1, where the first direction d1 points away from the first 110 at the substrate.

The first output electrode 510 may be light-transmissive or opaque. The input electrode 530 and the second output electrode 550 are light-transmissive. In detail, the light transmittance of the input electrode 530 and the second output electrode 550 is greater than or equal to 5%. For example, in this embodiment, the material of the input electrode 530 and the second output electrode 550 may be metal oxide, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, and indium. Germanium zinc oxide, or other suitable oxides, or a stacked layer of at least two of the above. However, the present invention is not limited to this. According to other embodiments, the material of the input electrode 530 and the second output electrode 550 can also be light-transmitting thin metal, and the thickness of the light-transmitting thin metal can be nanometer (nm) level. .

In this embodiment, the composition of the first photosensitive layer 520 and the composition of the second photosensitive layer 540 are substantially the same. In other words, the light absorption wavelength range of the first photosensitive layer 520 is substantially the same as the light absorption wavelength range of the second photosensitive layer 540. For example, in this embodiment, the materials of the first photosensitive layer 520 and the second photosensitive layer 540 may be silicon-rich oxide (SRO); the absorption wavelength range of the first photosensitive layer 520 and the second photosensitive layer The light absorption wavelength range of the photosensitive layer 540 may be visible light wavelength range (about 380 nm to 780 nm) or infrared light wavelength range (about 780 nm to 2500 nm), but the invention is not limited to this .

The input electrode 530 is used to receive a signal so that there is a bias voltage between the input electrode 530 and the first output electrode 510 and between the input electrode 530 and the second output electrode 550. When there is a bias voltage between the input electrode 530 and the first output electrode 510 and between the input electrode 530 and the second output electrode 550, when the light beam to be sensed irradiates the photosensitive structure 500, the first output electrode 510 and the second output electrode 510 The two output electrodes 550 can output the photocurrent corresponding to the light intensity.

In this embodiment, the first output electrode 510 and the second output electrode 550 can be selectively electrically connected. The photocurrent output by the photosensitive structure 500 may be the sum of the photocurrent output by the first output electrode 510 and the photocurrent output by the second output electrode 550. That is to say, the structure in which the light-transmitting input electrode 530 is sandwiched between two output electrodes (ie, the first output electrode 510 and the second output electrode 550) can be used in multiple photosensitive layers (ie, the first photosensitive layer 520). And the second photosensitive layer 540) have a better thickness to increase the photocurrent output by the photosensitive structure 500. In this way, the photosensitive performance of the photosensitive element U can be further improved.

It must be noted here that the following embodiments use the element numbers and part of the content of the foregoing embodiments, wherein the same numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted parts, refer to the foregoing embodiment, and the following embodiments will not be repeated.

6 is a schematic cross-sectional view of a photosensitive element U1 according to another embodiment of the invention. The photosensitive element U1 of FIG. 6 is similar to the photosensitive element U of FIG. 5A. The difference between the two is: the photosensitive element U1 includes a plurality of photosensitive structures 500-1, 500-2, and the plurality of photosensitive structures 500-1, 500-2 respectively Used to sense beams of different wavelength ranges.

Please refer to FIG. 6, specifically, the photosensitive element U1 includes a plurality of photosensitive structures 500. The first output electrode 510, the first photosensitive layer 520, the input electrode 530, the second photosensitive layer 540, and the second output electrode 550 of each photosensitive structure 500 are stacked in the first direction d1. The plurality of photosensitive structures 500 include a first photosensitive structure 500-1 and a second photosensitive structure 500-2 arranged in a second direction d2, wherein the first direction d1 and the second direction d2 are staggered.

The first photosensitive structure 500-1 and the second photosensitive structure 500-2 are used for sensing light beams in different wavelength ranges. The first photosensitive layer 520 of the first photosensitive structure 500-1 and the second photosensitive layer 540 of the first photosensitive structure 500-1 have the same first light absorption wavelength range, and the first photosensitive layer 520 of the second photosensitive structure 500-2 and The second photosensitive layer 540 of the second photosensitive structure 500-2 has the same second absorption wavelength range, and the first absorption wavelength range is different from the second absorption wavelength range. For example, in this embodiment, the first absorption wavelength range may be the visible light wavelength range (about 380 nm to 780 nm), and the second absorption wavelength range may be the infrared wavelength range (about 780 nm). Meters to 2500 nanometers), but the present invention is not limited to this.

The first photosensitive layer 520 of the first photosensitive structure 500-1 and the second photosensitive layer 540 of the first photosensitive structure 500-1 have the same first composition. The first photosensitive layer 520 and the second photosensitive layer 520 of the second photosensitive structure 500-2 The second photosensitive layer 540 of the photosensitive structure 500-2 has the same second component, and the first component is different from the second component. For example, in this embodiment, both the first component and the second component include silicon-rich oxide (SRO), but the silicon content of the first component is different from the silicon content of the second component, and/ Or the oxygen content of the first component is different from the oxygen content of the second component. The first component is different from the second component, and the refractive index of the first component and the refractive index of the second component are also different. For example, in this embodiment, the refractive index of the first component can be between 1.4 and 3.2, and the refractive index of the second component can be between 3.2 and 4.2, but the invention is not limited thereto.

In addition to the advantages of the photosensitive element U, the photosensitive element U1, including the first photosensitive structure 500-1 and the second photosensitive structure 500-2, can also sense multiple light beams with different wavelength ranges.

7A is a schematic cross-sectional view of a photosensitive element U2 according to another embodiment of the invention. FIG. 7B is a schematic top view of a photosensitive structure 500-3 according to another embodiment of the present invention. The photosensitive element U2 of FIG. 7A is similar to the photosensitive element U of FIG. 5A, and the difference between the two is that the photosensitive structure 500-3 of the photosensitive element U2 is different from the photosensitive structure 500 of the photosensitive element U.

7A and 7B, specifically, in this embodiment, the absorption wavelength range of the first photosensitive layer 520 of the photosensitive structure 500-3 is different from the absorption wavelength range of the second photosensitive layer 540 of the photosensitive structure 500-3 . For example, the light absorption wavelength range of the first photosensitive layer 520 of the photosensitive structure 500-3 may be the visible light wavelength range (approximately between 380 nm and 780 nm), and the light absorption of the second photosensitive layer 540 of the photosensitive structure 500-3 The wavelength range can be the infrared wavelength range (approximately between 780nm and 2500nm).

In this embodiment, the composition of the first photosensitive layer 520 of the photosensitive structure 500-3 is different from the composition of the second photosensitive layer 540 of the photosensitive structure 500-3, and the refractive index of the first photosensitive layer 520 of the photosensitive structure 500-3 The refractive index of the second photosensitive layer 540 of the photosensitive structure 500-3 is also different. For example, in this embodiment, the refractive index of the first photosensitive layer 520 of the photosensitive structure 500-3 can be between 1.4 and 3.2; the refractive index of the second photosensitive layer 540 of the photosensitive structure 500-3 can be between 3.2 and 3.2. 4.2, but the present invention is not limited to this.

In this embodiment, the first photosensitive layer 520 is located between the second photosensitive layer 540 and the first substrate 110. That is, the second photosensitive layer 540 for sensing infrared light is disposed above the first photosensitive layer 520 for sensing visible light.

In this embodiment, the first output electrode 510 and the second output electrode 550 of the photosensitive structure 500-3 are electrically independent. According to the magnitude of the photocurrent output by the first output electrode 510, the intensity of the visible light received by the photosensitive structure 500-3 can be determined. According to the magnitude of the photocurrent output by the second output electrode 550, the intensity of the infrared light received by the photosensitive structure 500-3 can be judged.

In the case of having a preferable thickness of the photosensitive layer (ie, the first photosensitive layer 520 and/or the second photosensitive layer 540), the photosensitive element U2 integrates the function of sensing visible light and infrared light. Furthermore, since the first photosensitive layer 520 and the second photosensitive layer 540 with different light absorption wavelength ranges are stacked in the vertical direction (ie, the first direction d1), the photosensitive element U2 also has the advantage of a small installation area.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.

10: Display device

100: Pixel array substrate

110: first substrate

110a: Perspective window

110b: Line area

110c: active area

200: second substrate

200b, R: area

300: display medium

400: Backlight

500, 500-1, 500-2, 500-3: photosensitive structure

510: first output electrode

520: The first photosensitive layer

530: input electrode

540: second photosensitive layer

550: second output electrode

A: Electronic components

CL: Wiring

d1: first direction

d2: second direction

E: Pixel electrode

PX: pixel

SL: signal line

S1, S2: side

T: Active component

U, U1, U2: photosensitive element

Ι-Ι’: Cut line

FIG. 1 shows the relationship between the voltage and the signal-to-noise ratio of a plurality of photosensitive elements each having various thicknesses. FIG. 2 is a schematic top view of a display device 10 according to an embodiment of the invention. 3 is a schematic cross-sectional view of a display device 10 according to an embodiment of the invention. 4 is a schematic top view of a pixel array substrate 100 according to an embodiment of the invention. 5A is a schematic cross-sectional view of a photosensitive element U according to an embodiment of the invention. FIG. 5B is a schematic top view of a photosensitive structure 500 according to an embodiment of the invention. 6 is a schematic cross-sectional view of a photosensitive element U1 according to another embodiment of the invention. 7A is a schematic cross-sectional view of a photosensitive element U2 according to another embodiment of the invention. FIG. 7B is a schematic top view of a photosensitive structure 500-3 according to another embodiment of the present invention.

100: Pixel array substrate

110: first substrate

110b: Line area

400: Backlight

500: photosensitive structure

510: first output electrode

520: The first photosensitive layer

530: input electrode

540: second photosensitive layer

550: second output electrode

d1: first direction

U: photosensitive element

Claims (9)

A photosensitive element includes: a first substrate; and at least one photosensitive structure, wherein each of the at least one photosensitive structure includes: a first output electrode disposed on the first substrate; a first photosensitive layer disposed on the On the first output electrode; an input electrode arranged on the first photosensitive layer and transparent; a second photosensitive layer arranged on the input electrode; and a second output electrode arranged on the second photosensitive layer On the layer, and transparent. According to the photosensitive element described in claim 1, wherein the composition of the first photosensitive layer and the composition of the second photosensitive layer are substantially the same, and the first output electrode is electrically connected to the second output electrode. The photosensitive element according to the first item of the scope of patent application, wherein the absorption wavelength range of the first photosensitive layer is substantially the same as the absorption wavelength range of the second photosensitive layer, and the first output electrode is electrically connected to the second output electrode. Sexual connection. According to the photosensitive element described in item 1 of the patent application, the composition of the first photosensitive layer is different from the composition of the second photosensitive layer, and the first output electrode and the second output electrode are electrically independent. The photosensitive element according to item 1 of the scope of patent application, wherein the absorption wavelength range of the first photosensitive layer is different from the absorption wavelength range of the second photosensitive layer, and the first output electrode and the second output electrode are electrically independent . The photosensitive element according to claim 1, wherein the first output electrode, the first photosensitive layer, the input electrode, the second photosensitive layer, and the second output electrode are stacked in a first direction, the The at least one photosensitive structure includes a first photosensitive structure and a second photosensitive structure. The first photosensitive structure and the second photosensitive structure are arranged in a second direction. The first direction and the second direction are staggered. The first photosensitive layer of the photosensitive structure and the second photosensitive layer of the first photosensitive structure have the same first component, the first photosensitive layer of the second photosensitive structure and the second photosensitive layer of the second photosensitive structure The layers have the same second component, the first component is different from the second component, and the first output electrode and the second output electrode of the first photosensitive structure are electrically independent of the second photosensitive structure The first output electrode and the second output electrode. The photosensitive element according to claim 1, wherein the first output electrode, the first photosensitive layer, the input electrode, the second photosensitive layer, and the second output electrode are stacked in a first direction, the The at least one photosensitive structure includes a first photosensitive structure and a second photosensitive structure. The first photosensitive structure and the second photosensitive structure are arranged in a second direction. The first direction and the second direction are staggered. The first photosensitive layer of the photosensitive structure and the second photosensitive layer of the first photosensitive structure have the same first absorption wavelength range, and the first photosensitive layer of the second photosensitive structure and the second photosensitive layer of the second photosensitive structure The two photosensitive layers have the same second absorption wavelength range, the first absorption wavelength range is different from the second absorption wavelength range, and the first output electrode and the second output electrode of the first photosensitive structure are electrically independent The first output electrode and the second output electrode of the second photosensitive structure. The photosensitive element according to claim 1, wherein the first photosensitive layer is located between the second photosensitive layer and the first substrate, the second photosensitive layer is used to absorb an infrared light, and the first photosensitive layer The layer is used to absorb a visible light. A display device, comprising: the photosensitive element according to any one of items 1 to 8 in the scope of patent application, wherein the first substrate has a see-through window, a circuit area, and an active area, and the circuit area is located in the see-through window And the circuit area is located between the active area and the perspective window; a plurality of pixels are arranged in the active area, and each of the pixels includes a signal line, an active element and a pixel electrode , The active element is electrically connected to the signal line, and the pixel electrode is electrically connected to the active element; and a plurality of wires are arranged in the circuit area, wherein each of the wires is located in the perspective window The multiple signal lines of the pixels on opposite sides are electrically connected, and the at least one photosensitive structure is disposed on the circuit area.

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