CN115797249A - 用于半导体样本制造的掩模检查 - Google Patents

用于半导体样本制造的掩模检查 Download PDF

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Publication number
CN115797249A
CN115797249A CN202210805808.1A CN202210805808A CN115797249A CN 115797249 A CN115797249 A CN 115797249A CN 202210805808 A CN202210805808 A CN 202210805808A CN 115797249 A CN115797249 A CN 115797249A
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CN
China
Prior art keywords
mask
image
profiles
images
defect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210805808.1A
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English (en)
Chinese (zh)
Inventor
A·什卡利姆
E·巴尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Israel Ltd
Original Assignee
Applied Materials Israel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Israel Ltd filed Critical Applied Materials Israel Ltd
Publication of CN115797249A publication Critical patent/CN115797249A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/0008—Industrial image inspection checking presence/absence
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/0006—Industrial image inspection using a design-rule based approach
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/10—Segmentation; Edge detection
    • G06T7/11—Region-based segmentation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G01N2021/95615—Inspecting patterns on the surface of objects using a comparative method with stored comparision signal
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Image Processing (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
CN202210805808.1A 2021-09-13 2022-07-08 用于半导体样本制造的掩模检查 Pending CN115797249A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/473,342 2021-09-13
US17/473,342 US12400314B2 (en) 2021-09-13 2021-09-13 Mask inspection for semiconductor specimen fabrication

Publications (1)

Publication Number Publication Date
CN115797249A true CN115797249A (zh) 2023-03-14

Family

ID=85431320

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210805808.1A Pending CN115797249A (zh) 2021-09-13 2022-07-08 用于半导体样本制造的掩模检查

Country Status (5)

Country Link
US (1) US12400314B2 (enExample)
JP (1) JP2023041623A (enExample)
KR (1) KR20230039557A (enExample)
CN (1) CN115797249A (enExample)
TW (1) TW202312099A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119797274A (zh) * 2025-03-13 2025-04-11 中北大学 一种n型SiC耐高温欧姆接触电极结构的制备方法
CN120599588A (zh) * 2025-08-06 2025-09-05 昆山大洋电路板有限公司 一种基于机器视觉的装配式印刷电路板检测系统

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230028830A (ko) * 2021-08-23 2023-03-03 삼성전자주식회사 웨이퍼 불량 검사 장치, 웨이퍼 불량 검사 시스템, 웨이퍼 검사 방법 및 웨이퍼 제조 방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5795688A (en) * 1996-08-14 1998-08-18 Micron Technology, Inc. Process for detecting defects in photomasks through aerial image comparisons
US7155052B2 (en) * 2002-06-10 2006-12-26 Tokyo Seimitsu (Israel) Ltd Method for pattern inspection
KR100474571B1 (ko) * 2002-09-23 2005-03-10 삼성전자주식회사 웨이퍼의 패턴 검사용 기준 이미지 설정 방법과 이 설정방법을 이용한 패턴 검사 방법 및 장치
JP4862031B2 (ja) * 2008-10-20 2012-01-25 株式会社ニューフレアテクノロジー マスク欠陥レビュー方法及びマスク欠陥レビュー装置
JP5498189B2 (ja) * 2010-02-08 2014-05-21 株式会社日立ハイテクノロジーズ 欠陥検査方法及びその装置
KR20120068128A (ko) * 2010-12-17 2012-06-27 삼성전자주식회사 패턴의 결함 검출 방법 및 이를 수행하기 위한 결함 검출 장치
US9367911B2 (en) * 2012-06-13 2016-06-14 Applied Materials Israel, Ltd. Apparatus and method for defect detection including patch-to-patch comparisons
JP5478681B2 (ja) * 2012-08-24 2014-04-23 株式会社日立ハイテクノロジーズ 半導体欠陥検査装置ならびにその方法
JP6480449B2 (ja) * 2013-08-23 2019-03-13 ケーエルエー−テンカー コーポレイション ブロック間レチクル検査
US9747518B2 (en) * 2014-05-06 2017-08-29 Kla-Tencor Corporation Automatic calibration sample selection for die-to-database photomask inspection
JP2017009379A (ja) * 2015-06-19 2017-01-12 株式会社ニューフレアテクノロジー 検査装置および検査方法
KR20180116406A (ko) * 2016-05-23 2018-10-24 가부시키가이샤 히다치 하이테크놀로지즈 검사용 정보 생성 장치, 검사용 정보 생성 방법, 및 결함 검사 장치
CN113454533B (zh) * 2019-02-25 2025-04-01 Asml荷兰有限公司 用于确定印刷图案的随机变化的方法
US11263496B2 (en) * 2019-02-25 2022-03-01 D2S, Inc. Methods and systems to classify features in electronic designs
US12243237B2 (en) * 2020-01-10 2025-03-04 Tasmit, Inc. Pattern-edge detection method, pattern-edge detection apparatus, and storage medium storing program for causing a computer to perform pattern-edge detection

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119797274A (zh) * 2025-03-13 2025-04-11 中北大学 一种n型SiC耐高温欧姆接触电极结构的制备方法
CN120599588A (zh) * 2025-08-06 2025-09-05 昆山大洋电路板有限公司 一种基于机器视觉的装配式印刷电路板检测系统
CN120599588B (zh) * 2025-08-06 2025-09-30 昆山大洋电路板有限公司 一种基于机器视觉的装配式印刷电路板检测系统

Also Published As

Publication number Publication date
US12400314B2 (en) 2025-08-26
US20230080151A1 (en) 2023-03-16
KR20230039557A (ko) 2023-03-21
TW202312099A (zh) 2023-03-16
JP2023041623A (ja) 2023-03-24

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