CN115791098A - Passive silicon optical chip polarization correlation loss test method and test system - Google Patents

Passive silicon optical chip polarization correlation loss test method and test system Download PDF

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CN115791098A
CN115791098A CN202211601873.9A CN202211601873A CN115791098A CN 115791098 A CN115791098 A CN 115791098A CN 202211601873 A CN202211601873 A CN 202211601873A CN 115791098 A CN115791098 A CN 115791098A
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polarization
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葛颖
侯广辉
赵远
蔡鹏飞
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NANO (BEIJING) PHOTONICS Inc
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Abstract

The invention discloses a method and a system for testing polarization correlation loss of a passive silicon optical chip, which utilize a polarization analyzer to set the polarization state of light input to a chip to be tested, and monitor and record the input and output optical power values of the chip to be tested in four polarization states; and calculating Stokes vectors of light polarization states corresponding to the maximum and minimum insertion loss of the chip to be detected based on the four recorded optical power values, and setting the Stokes vectors back to the polarization analyzer. The method does not need to traverse the polarization state, and only needs to test the insertion loss of the optical chip under four groups of fixed polarization states and two groups of back-set polarization states, so that the method improves the test efficiency, and simultaneously improves the accuracy of the test result because the maximum insertion loss and the minimum insertion loss of the optical chip are actual test values after the polarization states are back-set, rather than theoretical calculation values alone.

Description

Passive silicon optical chip polarization correlation loss test method and test system
Technical Field
The invention relates to the technical field of optical chip testing, in particular to a method and a system for testing polarization dependent loss of a passive silicon optical chip.
Background
Optical index testing of silicon optical chips is a key ring in optical chip production and research and development, and among numerous optical indexes, polarization-related loss is an important standard for measuring device capability, so that the testing capability of the index can directly influence the research and development and production of the optical chips.
The traditional polarization-dependent loss test method generally adopts a polarization scanning method, and particularly records the optical power change in the full state through a power meter when the polarization state is changed by utilizing a polarization controller, and finally obtains the polarization-dependent loss based on the maximum value, the minimum value and the specific numerical value change recorded by the power meter. In order to solve the above technical problems, those skilled in the art propose a mueller matrix method, that is, a test optical device obtains a matrix by calculating input and output optical transmission characteristics in four different polarization states, and then obtains a polarization dependent loss theoretical value by calculating according to the matrix.
Disclosure of Invention
In view of this, the present invention provides a method and a system for testing polarization dependent loss of a passive silicon optical chip, so as to solve the technical problem of low accuracy of the existing testing method.
The following presents a simplified summary in order to provide a basic understanding of some aspects of the disclosed embodiments. This summary is not an extensive overview and is intended to neither identify key/critical elements nor delineate the scope of such embodiments. Its sole purpose is to present some concepts in a simplified form as a prelude to the more detailed description that is presented later.
The invention adopts the following technical scheme:
in a first aspect, the present invention provides a method for testing polarization dependent loss of a passive silicon optical chip, including:
setting the polarization state of light input to the chip to be tested by using a polarization analyzer, and monitoring and recording the input and output light power values of the chip to be tested in four polarization states;
and calculating the Stokes vectors of the light polarization states corresponding to the maximum and minimum insertion loss of the chip to be tested based on the four recorded optical power values, and setting the Stokes vectors back to the polarization analyzer.
Further, the four polarization states of the light input to the chip to be measured set by the polarization analyzer are respectively: vertical linearly polarized light, horizontal linearly polarized light, 45-degree inclined linearly polarized light and left-handed/right-handed circularly polarized light.
Further, the method for testing polarization dependent loss of the passive silicon optical chip further comprises the following steps: and providing laser with a specific wavelength for the polarization analyzer so that the polarization analyzer controls and changes the polarization state of the light input to the chip to be tested in real time.
Further, the method for testing polarization dependent loss of the passive silicon optical chip further comprises the following steps: and dividing the output light of the polarization analyzer into two parts, wherein one part is input to the chip to be detected, and the other part is used for monitoring the light power value input to the chip to be detected in real time.
Further, after the setting back the stokes vector to the polarization analyzer, the method further includes: and testing the actual maximum insertion loss and the minimum insertion loss of the chip to be tested, and calculating to obtain the polarization-dependent loss of the chip to be tested according to the actual maximum insertion loss and the actual minimum insertion loss.
In a second aspect, the present invention further provides a system for testing polarization dependent loss of a passive silicon optical chip, including:
a polarization analyzer for setting a polarization state of light input to the chip to be measured;
the optical power meter is used for monitoring and recording the input and output optical power values of the chip to be tested in four polarization states;
and the feedback module is used for calculating the Stokes vectors of the light polarization states corresponding to the maximum and minimum insertion loss of the chip to be tested based on the four recorded optical power values and setting the Stokes vectors back to the polarization analyzer.
Further, the four polarization states of the light input to the chip to be measured set by the polarization analyzer are respectively: vertical linearly polarized light, horizontal linearly polarized light, 45-degree inclined linearly polarized light and left-handed/right-handed circularly polarized light.
Further, the system for testing polarization dependent loss of the passive silicon optical chip further comprises: and the light source is used for providing laser with a specific wavelength for the polarization analyzer so that the polarization analyzer controls and changes the polarization state of the light input to the chip to be tested in real time.
Further, the system for testing polarization dependent loss of the passive silicon optical chip further comprises: and the splitter is used for splitting the output light of the polarization analyzer into two parts, wherein one part is input into a chip to be tested, and the other part is input into the optical power meter, and is used for monitoring the optical power value input into the chip to be tested in real time by the optical power meter.
Further, the system for testing polarization dependent loss of the passive silicon optical chip further comprises: and the data processing module is used for testing the actual maximum insertion loss and the minimum insertion loss of the chip to be tested after the Stokes vector is set back to the polarization analyzer, and calculating the polarization correlation loss of the chip to be tested according to the actual maximum insertion loss and the actual minimum insertion loss.
The invention has the following beneficial effects: the optical chip testing method and the optical chip testing device have the advantages that the polarization state does not need to be traversed, the insertion loss of the optical chip under four groups of fixed polarization states and two groups of back-set polarization states only needs to be tested, the testing efficiency is improved, and meanwhile, the maximum insertion loss and the minimum insertion loss of the optical chip are actual testing values after the polarization states are back-set and are not only theoretical calculation values, so that the accuracy of a testing result is improved.
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In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic flow chart of a method for testing polarization dependent loss of a passive silicon optical chip according to the present invention;
FIG. 2 is a block diagram of a passive silicon optical chip polarization dependent loss test system according to the present invention;
FIG. 3 is a graph of the measured value and the theoretical value of the minimum insertion loss IL _ min of the optical chip varying with the wavelength;
FIG. 4 is a graph of the measured value and the theoretical value of the maximum insertion loss IL _ max of the optical chip as a function of wavelength;
fig. 5 is a graph of the measured value and the theoretical value of the polarization dependent loss PDL of the optical chip as a function of wavelength.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the described embodiments are only some embodiments of the invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, in some illustrative embodiments, the present invention provides a method for testing polarization dependent loss of a passive silicon photonic chip, comprising the steps of:
101: the laser outputs single wavelength tunable laser light, provides specific wavelength laser light for the polarization analyzer, and the polarization state of the light output from the polarization analyzer is controlled by the polarization analyzer.
102: the polarization state of the light input to the chip to be tested is set by the polarization analyzer, so that the polarization state of the light input to the chip to be tested is controlled and changed in real time. The four polarization states of the light input to the chip to be tested and set by the polarization analyzer are respectively as follows: vertical linearly polarized light, horizontal linearly polarized light, 45-degree inclined linearly polarized light and left-handed/right-handed circularly polarized light.
103: the output light of the polarization analyzer is divided into two parts, one part is input into the chip to be tested, and the other part is input into the optical power meter, so that the optical power meter can monitor the optical power value input into the chip to be tested in real time and monitor and record the output optical power value of the chip to be tested in four polarization states in the wavelength traversing process of the laser.
104: and calculating the Stokes vectors of the light polarization states corresponding to the maximum and minimum insertion loss of the chip to be tested based on the four recorded optical power values. The four groups of optical power values refer to input and output optical power values of the chip to be tested in four polarization states in the wavelength traversing process.
105: and (4) setting the Stokes vector of the light polarization state corresponding to the chip to be tested when the insertion loss is maximum back to the polarization analyzer.
106: and (4) returning the Stokes vector of the corresponding light polarization state when the insertion loss of the chip to be tested is minimum to the polarization analyzer.
107: the laser traverses the wavelength again, and in the process of traversing the wavelength, the optical power meter monitors the optical power value input to the chip to be tested and the output optical power value of the chip to be tested in real time, so that the actual maximum insertion loss and the actual minimum insertion loss of the chip to be tested can be tested.
108: and calculating to obtain the polarization correlation loss of the chip to be detected according to the actual maximum insertion loss and the actual minimum insertion loss of the chip to be detected.
Before testing, a chip to be tested is placed on a slide holder with an air suction pump to be fixed, input and output optical fibers on two sides of the chip to be tested are fixed on a six-axis adjustable displacement system, the displacement system is used for controlling the relative positions of the input and output optical fibers and the chip to be tested, the optimal light coupling position is further reached, at the moment, the link insertion loss is minimum, and then the testing process is started.
The calculation process of steps 104, 107 and 108 is described in detail below.
In stokes space, the relationship of the output light vector to the input light vector after light transmission can be expressed as:
So=MSi;
in the above formula, si = (Si) 1 ,Si 2 ,Si 3 ,Si 4 ) T For input light vector, so = (So) 1 ,So 2 ,So 3 ,So 4 ) T For output light vectors, M is the transmission matrix of the input and output light, which is a 4 × 4 mueller matrix, as follows:
Figure BDA0003995546880000051
wherein m is 11 ,m 12 ,m 13 ,m 14 Is defined as:
Figure BDA0003995546880000061
Figure BDA0003995546880000062
Figure BDA0003995546880000063
Figure BDA0003995546880000064
wherein, a 1 ,a 2 ,a 3 ,a 4 The optical loss values are for four polarization states (LP 0/LP90/LP 45/RHC). The stokes vectors for the four polarization states are shown in the following table:
polarized light Stokes vector
Linearly polarized light in horizontal direction (LP 0) (1,1,0,0)
Linearly polarized light in vertical direction (LP 90) (1,-1,0,0)
45 degree polarized light (LP 45) (1,0,1,0)
Right-handed circularly polarized light (RHC) (1,0,0,1)
The polarization dependent loss is defined as:
PDL=10log(T max /T min );
wherein, T max And T min Respectively representing the maximum and minimum power transmitted by the light after passing through the chip under test.
The output power value through the chip under test is expressed as:
Tout=m 11 Si 1 +m 12 Si 2 +m 13 Si 3 +m 14 Si 4
in the formula, m 11 ,m 12 ,m 13 ,m 14 As a constant, si is the input optical power, and in the process under discussion, the degree of polarization of the input light is 1, so the polarization state of the input light satisfies the following condition:
Si 1 2 =Si 2 2 +Si 3 2 +Si 4 2
the position of the extreme value of the output light power corresponds to the polarization state of certain input light, and the theory of the extreme value of the function shows that when m is equal to m 12 Si 2 =m 13 Si 3 =m 14 S i4 When the output power Tout is an extreme value, the ratio of the output power Tout to the output power Tout is a maximum value when the ratio is greater than zero and a minimum value when the ratio is less than zero, and therefore a specific expression of the polarization-dependent loss can be deduced as follows:
Figure BDA0003995546880000065
Figure BDA0003995546880000071
the stokes vector for the corresponding polarization state at this time is expressed as follows:
Figure BDA0003995546880000072
S min =-S max
in some demonstrative embodiments, as shown in fig. 2, the present invention further provides a passive silicon photonic chip polarization dependent loss testing system, including: light source, branching unit, polarization analyzer, optical power meter.
The light source is a programmable laser with adjustable power and adjustable wavelength, and is used for providing laser with specific wavelength for the polarization analyzer, namely providing laser with specific wavelength for the chip to be tested. The laser outputs single wavelength tunable laser light, which is connected to an input port of a polarization analyzer, and the polarization state of the light output therefrom is controlled by the polarization analyzer.
The branching unit is used for dividing the output light of the polarization analyzer into two parts, one part is input to the chip to be detected, the other part is input to the optical power meter, and the optical power meter is used for monitoring the optical power value input to the chip to be detected in real time, so that in the process of traversing the wavelength of the laser, the optical power meter can monitor the optical power value input to the chip to be detected in real time, and the output optical power values of the chip to be detected in four polarization states are monitored and recorded.
And the polarization analyzer is used for setting the polarization state of the light input to the chip to be tested so as to control and change the polarization state of the light input to the chip to be tested in real time. The four polarization states of the light input to the chip to be tested set by the polarization analyzer are respectively: vertical linearly polarized light, horizontal linearly polarized light, 45-degree inclined linearly polarized light and left-handed/right-handed circularly polarized light.
And the optical power meter is used for monitoring and recording the input and output optical power values of the chip to be tested in the four polarization states. Specifically, the optical power meter is a wavelength-adjustable and programmable optical power meter, and further reads the light power value of the emergent light of the chip to be tested and the size of the monitored light output by the splitter in real time.
The two sides of the chip to be tested are respectively connected with the polarization analyzer and the optical power meter through optical fibers. The test system of the present embodiment further includes: a displacement system. Before testing, a chip to be tested is placed on a slide holder with an air suction pump to be fixed, input and output optical fibers on two sides of the chip to be tested are fixed on a six-axis adjustable displacement system, the displacement system is used for controlling the relative positions of the input and output optical fibers and the chip to be tested, the optimal light coupling position is further reached, at the moment, the link insertion loss is minimum, and then the testing process is started.
The test system of the present embodiment further includes: feedback module and data processing module.
And the feedback module is used for calculating the Stokes vectors of the light polarization states corresponding to the maximum and minimum insertion loss of the chip to be detected based on the four recorded optical power values, returning the Stokes vectors of the light polarization states corresponding to the maximum insertion loss of the chip to be detected to the polarization analyzer, and returning the Stokes vectors of the light polarization states corresponding to the minimum insertion loss of the chip to be detected to the polarization analyzer.
The four groups of optical power values refer to input and output optical power values of the chip to be tested in four polarization states in the process of traversing the wavelength.
And the data processing module is used for testing the actual maximum insertion loss and the actual minimum insertion loss of the chip to be tested after the Stokes vector is set back to the polarization analyzer. In the process that the laser traverses the wavelength again, the optical power meter monitors the optical power value input to the chip to be tested and the output optical power value of the chip to be tested in real time, and then the actual maximum insertion loss and the actual minimum insertion loss of the chip to be tested can be tested. And the data processing module is also used for calculating the polarization correlation loss of the chip to be tested according to the actual maximum insertion loss and the actual minimum insertion loss.
The test system and the test method belong to the same inventive concept, so the calculation processes of the feedback module and the data processing module can refer to the calculation flow provided by the test method.
Taking the insertion loss of a tested group of passive optical chips as an example, as shown in fig. 3, 4 and 5, the minimum insertion loss, the maximum insertion loss and the theoretical calculated value (the value obtained by the mueller matrix method) and the actual test value (the value obtained by the test method of the present invention) of the PDL within the wavelength range of 1520nm to 1580nm of the passive optical chip are compared. The test results show that the test results of the two test methods have obvious difference, which indicates that the PDL obtained by only theoretical calculation is greatly different from the actual PDL, and the PDL cannot be obtained by only theoretical calculation. Therefore, the PDL under the 1550nm wavelength point is also tested by a polarization scanning method, the testing method has high precision and is compared with the testing data of the Mueller matrix method and the testing mode of the invention, and the data result is shown in the following table:
test mode IL_max(dBm) IL_min(dBm) PDL(dB)
Polarization scanning method -9.23 -33.52 24.29
Mueller matrix method -8.919759 -34.146759 25.227
The test method of the invention -9.2191 -33.166918 23.947818
Therefore, the test result obtained by the test method provided by the invention is closer to the test result obtained by the polarization scanning method, and the test accuracy is obviously improved compared with that obtained by the Mueller matrix method. In addition, the invention only needs to test the insertion loss of the optical chip under four groups of fixed polarization states and two groups of back-set polarization states without traversing the polarization states, thereby improving the test efficiency on the premise of ensuring the test precision. Compared with the traditional Mueller matrix method, the maximum and minimum insertion loss of the optical chip is an actual test value after the polarization state is set, and is not only a theoretical calculation value, so that the test result has higher reliability and higher accuracy.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (10)

1. A method for testing polarization dependent loss of a passive silicon optical chip is characterized by comprising the following steps:
setting the polarization state of light input to the chip to be tested by using a polarization analyzer, and monitoring and recording the input and output light power values of the chip to be tested in four polarization states;
and calculating the Stokes vectors of the light polarization states corresponding to the maximum and minimum insertion loss of the chip to be tested based on the four recorded optical power values, and setting the Stokes vectors back to the polarization analyzer.
2. The method according to claim 1, wherein the four polarization states of the light input to the chip to be tested set by the polarization analyzer are respectively: vertical linearly polarized light, horizontal linearly polarized light, 45-degree inclined linearly polarized light and left-handed/right-handed circularly polarized light.
3. The method for testing polarization dependent loss of the passive silicon optical chip according to claim 2, further comprising: and providing laser with a specific wavelength for the polarization analyzer so that the polarization analyzer controls and changes the polarization state of the light input to the chip to be tested in real time.
4. The method for testing polarization dependent loss of the passive silicon optical chip according to claim 3, further comprising: and dividing the output light of the polarization analyzer into two parts, wherein one part is input to the chip to be tested, and the other part is used for monitoring the light power value input to the chip to be tested in real time.
5. The method as claimed in claim 4, wherein after the step of providing the stokes vector back to the polarization analyzer, the method further comprises: and testing the actual maximum insertion loss and the minimum insertion loss of the chip to be tested, and calculating to obtain the polarization-related loss of the chip to be tested according to the actual maximum insertion loss and the actual minimum insertion loss.
6. A passive silicon optical chip polarization dependent loss test system is characterized by comprising:
a polarization analyzer for setting a polarization state of light input to the chip to be measured;
the optical power meter is used for monitoring and recording the input and output optical power values of the chip to be tested in four polarization states;
and the feedback module is used for calculating the Stokes vectors of the light polarization states corresponding to the maximum and minimum insertion loss of the chip to be tested based on the four recorded optical power values and setting the Stokes vectors back to the polarization analyzer.
7. The system of claim 6, wherein the polarization analyzer is configured to set four polarization states of the light input to the chip to be tested as follows: vertical linearly polarized light, horizontal linearly polarized light, 45-degree inclined linearly polarized light and left-handed/right-handed circularly polarized light.
8. The passive silicon optical chip polarization dependent loss test system of claim 7, further comprising: and the light source is used for providing laser with a specific wavelength for the polarization analyzer so that the polarization analyzer controls and changes the polarization state of the light input to the chip to be tested in real time.
9. The passive silicon photonic chip polarization dependent loss testing system of claim 8, further comprising: and the splitter is used for splitting the output light of the polarization analyzer into two parts, wherein one part is input into a chip to be tested, and the other part is input into the optical power meter, and is used for monitoring the optical power value input into the chip to be tested in real time by the optical power meter.
10. The passive silicon photonic chip polarization dependent loss testing system of claim 9, further comprising: and the data processing module is used for testing the actual maximum insertion loss and the minimum insertion loss of the chip to be tested after the Stokes vector is set back to the polarization analyzer, and calculating the polarization related loss of the chip to be tested according to the actual maximum insertion loss and the actual minimum insertion loss.
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