CN115772660A

CN115772660A - Heating device, CVD equipment and method for semiconductor process treatment

Info

Publication number: CN115772660A
Application number: CN202111039519.7A
Authority: CN
Inventors: 庞云玲; 姜勇
Original assignee: Advanced Micro Fabrication Equipment Inc Shanghai
Current assignee: Advanced Micro Fabrication Equipment Inc Shanghai
Priority date: 2021-09-06
Filing date: 2021-09-06
Publication date: 2023-03-10
Also published as: TW202312258A; TWI828238B

Abstract

The invention provides a heating device for a CVD apparatus, comprising: an upper lamp module disposed above the reaction chamber and/or a lower lamp module disposed below the reaction chamber; the upper lamp module and the lower lamp module comprise an upper lamp array and a lower lamp array which are formed by a plurality of heating lamps; heating the substrate bearing table and the substrate through the upper lamp array and the lower lamp array; the heating lamp comprises a tubular lamp body and electrode ends positioned at two ends of the tubular lamp body, and the electrode ends in the upper lamp module and the lower lamp module are electrically connected upwards and downwards respectively; a filament extending along the tubular lamp body is arranged in the tubular lamp body; the upper lamp array and the lower lamp array can control heating power in a partition mode. The invention can improve the heat energy utilization rate of the heating device, can accurately control the heating power of each heating lamp, prevents cold spots from appearing between adjacent heating lamps, and effectively ensures the uniform temperature of the surface of the substrate.

Description

Heating device, CVD equipment and method for semiconductor process treatment

Technical Field

The invention relates to the technical field of semiconductors, in particular to a heating device, CVD equipment and a semiconductor process treatment method.

Background

In the semiconductor manufacturing industry, chemical Vapor Deposition (CVD) is a well-known process for forming thin film materials on substrates, such as silicon wafers. In a CVD process, gaseous molecules of a material to be deposited are supplied to a wafer to form a thin film of the material on the wafer by a chemical reaction. The thin film formed may be polycrystalline, amorphous or epitaxial. Typically, the CVD process is performed at elevated temperatures to accelerate the chemical reaction and produce high quality films. Some processes, such as epitaxial silicon deposition, are carried out at very high temperatures (> 500 ℃ C., < 1220 ℃ C.).

During a CVD process, one or more substrates are placed on a substrate support within a reaction chamber (defined within a reactor). For example, the substrate may be a wafer and the substrate support may be a susceptor. Both the substrate and the usual carrier are heated to the desired temperature. In a typical wafer processing step, a reactant gas is passed over a heated wafer, resulting in Chemical Vapor Deposition (CVD) of a thin layer of the desired material on the wafer. If the deposited layer has the same crystal structure as the underlying silicon wafer, it is referred to as an epitaxial layer, sometimes also referred to as a monocrystalline layer. These deposited layers are fabricated into integrated circuits by subsequent processes, yielding tens to thousands or even millions of integrated circuit devices, depending on the size of the wafer and the complexity of the circuitry.

Various process parameters must be carefully controlled to ensure a high quality deposited layer produced in semiconductor processing. One key parameter is the temperature of the wafer during each process step of the wafer process. For example, in a CVD process, because the deposition gases react and deposit on the wafer at a particular temperature, the wafer temperature determines the rate at which material is deposited on the wafer. If the temperature on the wafer surface varies, uneven deposition of a thin film occurs and physical properties on the wafer will not be uniform. Moreover, in epitaxial deposition, even slight temperature non-uniformity can cause crystal slip.

Disclosure of Invention

The invention aims to provide a heating device, CVD equipment and a method, wherein the heating device only provides radiation heat energy for a reaction chamber of the CVD equipment through a U-shaped heating lamp (other special-shaped lamps are not needed), and the layout of an upper lamp array and a lower lamp array in the heating device is simplified. The invention also effectively compensates the cold spot between the adjacent heating lamps by controlling the filament winding density of the heating lamps and the vertical arrangement mode of the heating lamps. The invention also independently controls the total power of each area of the upper lamp array and the lower lamp array, realizes the local control of the temperature of the substrate and effectively ensures the uniform temperature of the surface of the substrate. Furthermore, the upper and lower reflecting screens are matched with the upper and lower lamp arrays, so that light rays are collected, reflected and gathered towards the substrate bearing table, and the heat energy utilization rate of the heating device is improved.

In order to achieve the above object, the present invention provides a heating device for a CVD apparatus including a substrate carrier table for carrying a substrate in a reaction chamber of the CVD apparatus, the heating device comprising: an upper lamp module disposed above the reaction chamber and/or a lower lamp module disposed below the reaction chamber;

the upper lamp module and the lower lamp module comprise an upper lamp array and a lower lamp array which are formed by a plurality of heating lamps; heating the substrate bearing table and the substrate through the upper lamp array and the lower lamp array;

the heating lamp comprises a tubular lamp body and electrode ends positioned at two ends of the tubular lamp body, and the electrode ends in the upper lamp module and the lower lamp module are electrically connected upwards and downwards respectively; a filament extending along the tubular lamp body is arranged in the tubular lamp body; the upper lamp array and the lower lamp array can control heating power in a partition mode.

Optionally, the tubular lamp body comprises two vertical heating sections, and a horizontal heating section between the two vertical heating sections; the length direction of the horizontal heating section is the length direction of the heating lamp; the electrode end is positioned at one end of the vertical heating section; cold spots between adjacent heating lamps are compensated by adjacent vertical heating segments.

Optionally, the winding density of the filament in the vertical heating section is greater than that of the filament in the horizontal heating section.

Optionally, the length direction of the heating lamps in the upper lamp array is perpendicular to the length direction of the heating lamps in the lower lamp array.

Optionally, the length direction of the heating lamps in the upper lamp array is the same as the process gas flow direction in the reaction chamber, and the length direction of the heating lamps in the lower lamp array is perpendicular to the process gas flow direction; or the length direction of the heating lamps in the upper lamp array is perpendicular to the process gas flow direction, and the length direction of the heating lamps in the lower lamp array is the same as the process gas flow direction in the reaction chamber.

Optionally, the upper lamp module and the lower lamp module further include an upper reflective screen and a lower reflective screen corresponding to the substrate carrying table, respectively, and the upper reflective screen and the lower reflective screen both completely cover the substrate carrying table; the upper lamp array and the lower lamp array are respectively arranged at the bottom of the upper reflecting screen and the top of the lower reflecting screen; light rays emitted back to the substrate bearing table are collected through the upper reflecting screen and the lower reflecting screen and are reflected back to the substrate bearing table.

Optionally, areas of the bottom surface of the upper reflecting screen and the top surface of the lower reflecting screen corresponding to the substrate bearing table are diffuse reflection areas, and other areas of the bottom surface of the upper reflecting screen and the top surface of the lower reflecting screen are specular reflection areas.

Optionally, a plurality of fluid channels are arranged inside the upper and lower reflective screens, and the temperature of the upper and lower reflective screens is controlled by injecting cooling fluid into the gas channels.

Optionally, the upper reflecting screen and the lower reflecting screen are provided with a plurality of grooves, and the temperature of the upper reflecting screen and the temperature of the lower reflecting screen are controlled by injecting cooling gas into the grooves.

Optionally, the upper reflective screen and the lower reflective screen are further provided with paired sockets, and the groove may be disposed between the paired sockets.

Optionally, the bottom edge of the upper reflecting screen is provided with a plurality of arc-shaped surfaces which are formed by upward arching and face the substrate, and the heating lamps at the bottom edge of the upper reflecting screen are respectively arranged in the corresponding arc-shaped surfaces; the bottom edge of the lower reflecting screen is provided with a plurality of arc surfaces which are formed by downward arching and face the substrate, and the heating lamps at the bottom edge of the lower reflecting screen are respectively arranged in the corresponding arc surfaces; and light is focused on the substrate bearing table through the arc-shaped surface.

Optionally, every two adjacent heating lamps in the upper lamp array and the lower lamp array are used as a group, and the power of each group of heating lamps is independently controlled.

Optionally, the upper lamp array is divided into a middle area and edge areas located at two sides of the middle area; the length of the middle zone heating lamps is greater than the length of the edge zone heating lamps.

Optionally, there is at least one row of heating lamps in the lower array of lamps, the length of the heating lamps in the row being less than the length of the other heating lamps.

The present invention also provides a CVD apparatus comprising:

a reaction chamber;

the rotatable substrate bearing table is arranged in the reaction chamber and used for fixing the substrate;

a heating device according to the invention arranged above and/or below the reaction chamber.

The invention also provides a semiconductor process treatment method, which is realized by adopting the CVD equipment of the invention and comprises the following steps:

placing the substrate on a substrate bearing table, starting a heating device of CVD equipment, and carrying out substrate process treatment;

the power of the heating lamps is independently adjusted to achieve a uniform temperature distribution across the substrate surface.

Optionally, the semiconductor process processing method further includes:

the method comprises the following steps of dividing an upper lamp array and a lower lamp array into a plurality of areas respectively, wherein each area comprises at least one heating lamp; the total power of each zone is independently controlled.

Optionally, the region includes a middle region and an edge region, and the edge region is independently controlled in temperature relative to the middle region.

Optionally, in the upper lamp array, the total power of the zone decreases along the process gas flow direction.

Optionally, the lower reflecting screen is provided with a through hole, and a rotating driving shaft of the substrate bearing table vertically penetrates through the through hole to be fixedly connected with the bottom of the substrate bearing table; in the lower lamp array, the power of the heating lamps around the through hole is greater than that of the other heating lamps.

Compared with the prior art, the invention has the beneficial effects that:

1) The heating device of the invention does not need to use other special-shaped lamps to provide radiation heat energy for the reaction chamber of the CVD equipment, thereby simplifying the layout of the upper lamp array and the lower lamp array in the heating device;

2) Compared with a long lamp crossing the diameter of the substrate bearing table, the invention uses a plurality of heating lamps with shorter length to heat the substrate bearing table, realizes the local control of the surface temperature of the substrate by independently controlling the power of each heating lamp, and solves the problem of uneven temperature of a specific area on the surface of the substrate; meanwhile, the heating lamp has a shorter filament than the long lamp, so that the filament in the heating lamp is not easy to droop, and the service life of the heating lamp is prolonged;

3) The filament winding density of the vertical heating section of the heating lamp is greater than that of the horizontal heating section, so that cold spots between adjacent heating lamps are effectively compensated; moreover, as the projection area of the vertical heating section on the substrate is small, the temperature of the substrate can be locally compensated in a very small range through the vertical heating section;

4) The invention divides the upper and lower lamp arrays into a plurality of areas (groups), and independently controls the total power of each area (group), thereby realizing the local control of the substrate temperature, effectively ensuring the substrate temperature equalization and improving the substrate yield;

5) The upper reflecting screen and the lower reflecting screen better collect, reflect and gather light rays for the substrate bearing table through the diffuse reflection area corresponding to the substrate bearing table, the specular reflection area positioned at the periphery of the diffuse reflection area and the arc-shaped section facing the substrate bearing table, so that the heat energy utilization rate of the heating device is effectively improved;

6) The reflecting screen is arranged in the reaction chamber, so that the heat loss in the reaction chamber is effectively prevented;

7) The upper and lower reflecting screens are internally provided with the fluid channel and the groove for injecting cooling gas or liquid, so that the temperature of the upper and lower reflecting screens can be effectively controlled, and safety accidents caused by overhigh temperature of the upper and lower reflecting screens can be prevented.

Drawings

In order to more clearly illustrate the technical solution of the present invention, the drawings used in the description will be briefly introduced, it is obvious that the drawings in the following description are an embodiment of the present invention, and other drawings can be obtained by those skilled in the art without inventive efforts based on the drawings:

FIG. 1 is a schematic view of a CVD apparatus;

FIG. 2 is a schematic view of a CVD apparatus according to the present invention;

FIG. 3 is a schematic view of a heating lamp according to one embodiment;

FIG. 3A is a schematic view of a heating lamp having inclined vertical heating sections;

FIGS. 3B and 3C are schematic views of a heating lamp having curved and arc-shaped horizontal heating sections, respectively;

FIGS. 3D and 3E are bottom views of an upper lamp array employing curved and arcuate horizontal heating segments, respectively;

FIG. 4 is a bottom view of the upper lamp module according to the first embodiment;

FIG. 5 is a top view of a lower lamp module according to the first embodiment;

FIG. 5A is a partial schematic view of the portion of FIG. 5 within the dashed circle;

FIG. 6 is a schematic view of the upper lamp array divided into zones according to the first embodiment;

FIG. 7 is a schematic view illustrating the area division of the lower lamp array according to the first embodiment;

FIG. 8 is a schematic diagram illustrating a specular reflection area and a diffuse reflection area of an upper reflecting screen according to a first embodiment;

FIG. 9 is a schematic diagram illustrating a specular reflection area and a diffuse reflection area of a lower reflecting screen according to a first embodiment;

FIG. 10 is a schematic view of an arc segment of an upper reflecting screen according to one embodiment;

FIG. 11 is a schematic view of an arc segment of a lower reflecting screen according to the first embodiment;

FIG. 12 is a schematic view of a partial structure of an upper reflective screen according to a first embodiment;

FIG. 13 is a bottom view of the upper lamp module according to the second embodiment;

FIG. 14 is a bottom view of the upper lamp module according to the second embodiment;

FIG. 15 is a flowchart of a method of semiconductor processing according to the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.

The apparatus/component of the present invention is primarily applicable to CVD equipment, particularly CVD equipment in which a substrate holder (sometimes also referred to in the industry as a "substrate tray") for holding substrates during deposition is rotated at a rotational speed to improve the quality of the deposition, such as MOCVD equipment. To illustrate, the CVD apparatus herein should be broadly understood to include epitaxial growth apparatus.

The CVD apparatus 10 shown in FIG. 1 includes a reaction chamber 112 in a horizontal flow shape formed of a material transparent to thermal energy. Process gas flows into the reaction chamber 112 from the inlet 140 and out the outlet 142 in the direction indicated by the arrows. The reaction chamber 112 has a top wall at a top end, a bottom wall at a bottom end, and side walls extending between the top and bottom walls. A plurality of heating lamps 130 are disposed in the upper/lower heating cavities 136/138 above/below the reaction chamber to supply heat energy to the reaction chamber 112. A substrate support structure 120 is disposed within the reaction chamber, the substrate support structure 120 comprising: substrate carrier table 110, support 122, rotary drive shaft 124, and sealing tube 126.

The substrate carrier 110 is disposed in the reaction chamber and is used for carrying a substrate W. The support 122 is disposed within the reaction chamber and below the substrate holder 110 for supporting the substrate holder 110. The bracket 122 may be made of a non-metallic material to reduce the risk of contamination. The support 122 is mounted on top of the rotary drive shaft 124, and the bottom of the rotary drive shaft 124 vertically extends downward through the bottom wall of the reaction chamber 112, the lower heating chamber 138 and is located outside the CVD apparatus 10. The sealing tube 126 is sleeved outside the rotary driving shaft 124, and the sealing device (not shown in the figure) arranged between the sealing tube 126 and the rotary driving shaft 124 is used for isolating the environment in the reaction chamber from the atmospheric environment. The rotary drive shaft 124, the support 122, and the substrate carrier table 110 rotate together about the central axis of the rotary drive shaft 124 during substrate processing. The rotary drive shaft 124 may be driven by an external motor (not shown).

The substrate W is heated to a desired high temperature by the heating lamps 130 in the upper and

lower heating cavities

136 and 138 during substrate processing. However, due to the asymmetry of the chamber environment and the influence of the gas flow, even if a lamp source with a symmetrical strip is used, the substrate W will receive an uneven radiation and thus an uneven temperature distribution, and the zone adjustment of the individual strip light sources is limited, which is limited by the overall length of the strip light source and does not compensate for small temperature non-uniformities on the substrate W accurately. During substrate processing, the substrate W, the substrate carrier 110, may absorb a portion of the heat from the heat lamps 130, another portion of the heat from the heat lamps 130 may be lost to the surrounding environment by convection and conduction (e.g., heat loss through heat transfer from the interior walls of the chamber to the atmosphere), and heat loss in different surrounding environments may be different, which may make it difficult to accurately control the temperature within the chamber. On the other hand, the process gas is not sufficiently heated immediately after entering the reaction chamber 112, and there are inevitably "cold spots" around the rotary drive shaft 124, which are likely to cause uneven temperature distribution in the reaction chamber. How to solve the above problems is the key to ensure the temperature uniformity of the substrate.

Example one

The present invention provides a heating apparatus, as shown in fig. 2, for a CVD apparatus 20, wherein a reaction chamber of the CVD apparatus 20 contains a substrate carrier 260 for carrying a substrate W, and the substrate carrier 260 is driven to rotate around a central axis of a rotation driving shaft 224 by the rotation driving shaft.

The heating device includes: an upper lamp module 210 disposed above the reaction chamber and/or a lower lamp module 220 disposed below the reaction chamber.

The upper lamp module 210 includes an upper lamp array mounted at the bottom of an upper reflective screen and the upper reflective screen 212. The lower lamp module 220 includes a lower lamp array mounted on top of a lower reflective screen 222.

The upper and lower lamp arrays contain a plurality of heating lamps 230. Through last lamp array, lower lamp array heating substrate plummer 260 and substrate W, every the power of heating lamp 230 can be by independent control, and a plurality of heating lamps of upper lamp array and lower equal array can be carried out the subregion as required, and the heating lamp in the same region carries out same control, and the cold spot of heating between two adjacent heating lamps 230 can be compensated by the lateral wall of heating lamp. And the both ends of going up lamp array heating lamp upwards carry out the electricity and connect, and the both ends of lamp array heating lamp down carry out the electricity and connect downwards, can avoid inside because of the high temperature that the heating produced to the destruction of electrical connection component, so both realized going up lamp array and lamp array more meticulous subregion control down, improved the life-span and the stability of every fluorescent tube again.

The heating lamp 230 includes a tubular lamp body, two closed ends 235 and two electrode ends 236. A filament 234 is provided within the tubular lamp body extending along the tubular lamp body. As shown in fig. 3, the heating lamp 230 in this embodiment has a U-shaped structure including two vertical heating sections 231 facing each other, and a horizontal heating section 232 connected and disposed between the two vertical heating sections 231, and a length direction of the horizontal heating section 232 is a length direction of the heating lamp 230. In this embodiment, the horizontal heating section 232 of the heating lamp 230 has a linear structure and is parallel to the horizontal plane. The vertical heating section 231 is perpendicular to the horizontal plane. The two closed ends 235 are used for plugging two ends of the tubular lamp body respectively. The two electrode ends 236 are respectively and fixedly disposed on the two closed ends 235, and two ends of the filament 234 respectively penetrate through the two closed ends 235 and are electrically connected to the two electrode ends 236. The electrode terminals 236 of the upper lamp module 210 and the lower lamp module 220 are embedded into the upper reflective screen 212 and the lower reflective screen 222 upward and downward, respectively, and are electrically connected to the circuits mounted on the upper reflective screen 212 and the lower reflective screen 222. The electrode terminals are installed in the reflecting screen, which can prevent the electrode terminals from being damaged by being exposed in the heating space, and can realize the control of the heating lamp of a smaller unit, and meanwhile, the electrode terminals 236 can be prevented from being damaged by high temperature generated by heating by controlling the temperatures of the upper reflecting screen 212 and the lower reflecting screen 222.

It should be emphasized that the invention is not limited to the vertical heating section 231 being strictly perpendicular to the horizontal plane, and the vertical heating section is used for heating in the vertical direction, as shown in fig. 3A, and may also be at an angle to the vertical direction, as long as temperature compensation of the surrounding area in the vertical direction can be achieved. The shape of the horizontal heating section 232 is not limited in the present invention, and the horizontal heating section functions to radiate heat energy toward the plane where the wafer is located, as shown in fig. 3B and 3C, the horizontal heating section 232 may be in a wave shape, an arc shape, or the like, as long as heating in the horizontal direction can be achieved. In a preferred embodiment, the horizontal heating segments 232 of the upper lamp arrays are all located in a first plane, and the horizontal heating segments 232 of the lower lamp arrays are all located in a second plane.

Fig. 3D and 3E illustrate that in other embodiments, the heating lamps are not necessarily arranged in parallel, but may be arranged in a pentagonal or circular shape, as shown in the bottom view of the upper lamp array with the linear and arc horizontal heating segments 232. In these embodiments, several heating lamps may be divided into the same heating area according to actual needs, the power of the same heating area is controlled identically, and the difference of the heating power between different heating areas is maintained, for example, considering the measurement of the deposition effect on the wafer surface or the simulation of the gas flow distribution, and then planning the dividing and controlling strategy of the heating area.

As shown in fig. 3, in the present embodiment, the winding density of the filament 234 in the vertical heating section 231 is greater than that of the filament 234 in the horizontal heating section 232. Thus, the cold spot formed by the gap between the adjacent heating lamps 230 can be compensated by the adjacent vertical heating sections 231, and the problem of non-uniform heating of the surface of the substrate due to zone temperature control can be solved. And because the projection area of the vertical heating section 231 on the substrate W is small, the temperature influence range is small, so that local compensation of the substrate temperature in a smaller range can be realized through the vertical heating section 231.

The length direction of the heating lamps 230 in the upper lamp array is perpendicular to the length direction of the heating lamps 230 in the lower lamp array, and the radiation difference of one side array due to the arrangement of the heating lamps in one direction is compensated for each other, so that a substantially uniform temperature can be achieved over the entire substrate W during the processing of the substrate W.

In the present embodiment, as shown in fig. 4, the length direction of the heating lamps 230 in the upper lamp array is perpendicular to the process gas flow direction. As shown in fig. 5, the length direction of the heating lamps 230 in the lower lamp array is the same as the direction of the process gas flow in the reaction chamber 22. The arrangement mode can not only progressively control the temperature of the process gas after entering the cavity, realize uniform temperature of the substrate, but also prevent the process gas flow from generating turbulent flow.

Each row and each column of the upper and lower lamp arrays contains a plurality of heating lamps 230, and the length of the heating lamps 230 is shorter than the diameter of the substrate carrier 260. The heating lamps 230 of the present invention are relatively short in length relative to long lamps spanning the diameter of the substrate carrier, and thus localized control of the substrate surface temperature can be achieved by independently controlling the power of each heating lamp 230. The temperature of the specific area of the substrate W in a small range is adjusted without influencing the temperature of the adjacent area, so that the problem of non-uniform temperature of the specific area of the substrate is solved, and the control precision of the temperature of the substrate is improved. Meanwhile, the heating lamp 230 has a shorter filament 234 than the long lamp, so the filament 234 in the heating lamp 230 is not easily sagged, increasing the life span of the heating lamp 230.

As shown in fig. 4, in the present embodiment, the upper lamp array includes 11 rows and 4 columns of heating lamps 230, and the heating lamps 230 of the upper lamp array have substantially the same length.

As shown in fig. 5, the lower lamp array comprises 13 columns of heating lamps 230. The lower reflecting screen 222 is provided with a through hole 240, and the rotating driving shaft 224 of the substrate bearing table 260 vertically penetrates through the through hole 240 to be fixedly connected with the bottom of the substrate bearing table. The middle 7 th row of heating lamps 230 avoids the rotating drive shaft 224, and thus the row of heating lamps 230 has a length that is less than the length of the other heating lamps 230.

Due to the inevitable presence of "cold spots" around the rotating drive shaft 224. Fig. 5A is a partial schematic view of the area indicated by the dotted circle in fig. 5. As shown in FIG. 5A, to compensate for the "cold spots" around the rotating drive shaft 224, the six heating lamps 230 in the lower array of lamps around the through-hole 240 are all powered more than the other heating lamps 230 in the lower array of lamps.

The upper lamp array and the lower lamp array are further divided into a plurality of regions, and the regions include at least one heating lamp 230. By independently adjusting the total power of each zone, local control of the substrate surface temperature is achieved. The length and number of the heating lamps 230 in the area determine the range of temperature control of the substrate W.

One of the dashed boxes in fig. 6 and 7 represents one region. In this embodiment, each zone of the upper array of lamps contains two or one heating lamp 230 and each zone of the lower array of lamps contains two or four heating lamps 230.

The letters a to N in fig. 6 respectively indicate the corresponding regions of the upper lamp array having the same total power. The total power in the area near the inlet of the upper lamp array is higher than the total power in other areas due to the lower temperature of the process gas stream near the inlet. Alternatively, the total power of the zones in the upper lamp array decreases in the direction of the process gas flow.

The letters a-m in fig. 7 respectively indicate the corresponding regions of the lower lamp array having the same total power. As shown in fig. 6 and 7, the projection of the virtual first axis of symmetry on the substrate carrier 260 passes through the center of the substrate carrier, and the extending direction of the first axis of symmetry o-o' is the process gas flow direction. In this embodiment, each region of the upper lamp array and the lower lamp array is symmetrically arranged along the first symmetry axis, and the total power of the symmetric regions is the same.

As shown in FIG. 2, the upper and lower

reflective screens

212, 222 are positioned to correspond to the substrate carrier 260 and completely cover the substrate carrier 260 (the substrate carrier 260 does not extend from the edges of the upper and lower reflective screens 212, 222). The light emitted back to the substrate stage 260 is collected by the upper and lower reflection screens 212 and 222 and reflected back to the substrate stage 260, thereby improving the heat utilization rate of the heating lamp 230. In this embodiment, the bottom surface of the upper reflecting screen and the top surface of the lower reflecting screen are both provided with metal coatings for reflecting light. In this embodiment, the metal plating layer is made of gold.

As shown in fig. 8, the area of the bottom surface of the upper reflective screen corresponding to the substrate stage 260 is a diffuse reflection area (inside the dotted circle of fig. 8), and the other area of the bottom surface of the upper reflective screen is a specular reflection area (outside the dotted circle of fig. 8). As shown in fig. 9, the areas of the bottom surface of the upper reflecting screen, the top surface of the lower reflecting screen and the substrate carrier 260 are diffuse reflection areas (inside the dotted circle of fig. 9), and the other areas of the top surface of the lower reflecting screen are specular reflection areas (outside the dotted circle of fig. 9).

The surface roughness of the diffuse reflection area is uniformly distributed. The diffuse reflection area ensures a uniform distribution of the light reflected toward the substrate W. The light reflectivity is improved through the mirror reflection area, the edge heat loss is prevented, the light exceeding the edge of the substrate is reflected back to the substrate area in a directional mode, and the temperature in the reaction chamber is guaranteed to meet the set requirement.

The bottom edge of the upper reflecting screen is provided with a plurality of arc-shaped surfaces 250 formed by upward arching and facing the substrate W, and the heating lamps 230 at the bottom edge of the upper reflecting screen are respectively arranged in the corresponding arc-shaped surfaces 250. The lower edge of the lower reflecting screen is provided with a plurality of arc-shaped surfaces 250 formed by being arched downwards and facing the substrate W, and the heating lamps 230 at the bottom edge of the lower reflecting screen are respectively arranged in the corresponding arc-shaped surfaces 250. The light gathering and heat gathering to the substrate bearing table 260 are realized through the arc-shaped face 250.

In this embodiment, as shown in fig. 2 and 10, the upper reflecting screen 212 has four arc-shaped surfaces 250, the length direction of the arc-shaped surfaces 250 is the same as the length direction of the U-shaped lamps (perpendicular to the direction of the process gas flow), the four arc-shaped surfaces 250 are respectively provided with the heating lamps 230 in the first, second, tenth and eleventh rows of the upper lamp array, and one arc-shaped surface 250 corresponds to one row of the heating lamps 230. It is emphasized that one arcuate surface 250 may contain both specular and diffuse reflective areas.

As shown in fig. 11, the lower reflective screen 222 also has four arc-shaped surfaces 250, the length direction of the arc-shaped surfaces 250 is the same as the length direction of the U-shaped lamps (the same as the process gas flow direction), the four arc-shaped surfaces 250 are respectively provided with the heating lamps 230 in the first, second, twelfth and thirteenth columns of the lower lamp array, and one arc-shaped surface 250 corresponds to one column of the heating lamps 230.

A portion of upper reflector 212 is shown in fig. 12 (the bottom of which is provided with an arcuate surface). As shown in fig. 12, a plurality of fluid passages 2121 are further provided in the upper reflective screen 212, and the temperature of the upper reflective screen 212 and the temperature of the lower reflective screen 222 are controlled by circulating a cooling fluid through the fluid passages 2121, so as to prevent safety accidents due to the high temperature of the upper reflective screen 212 and the lower reflective screen 222. In this embodiment, the fluid is preferably a liquid. The lower reflecting screen is also provided with fluid channels 2121 for controlling the temperature.

As shown in fig. 12, a plurality of grooves 2122 are formed on the top surface of the upper reflecting screen, and cooling gas is introduced above the upper reflecting screen to flow along the grooves 2122 to control the temperature of the upper reflecting screen. The bottom surface of the lower reflecting screen is also provided with a groove 2122 for air cooling. Fig. 12 also shows the sockets 2361 of the electrode terminals 236, and a groove may be provided between a pair of sockets 2361 corresponding to one of the heating lamps 230, so that the cooling gas blown at the back of the reflecting screen may flow into the groove at the front of the reflecting screen through the gap of the sockets 2361, to assist in controlling the temperature of the whole reflecting screen.

Example two

In this embodiment, the length direction of the heating lamps 230 in the upper lamp array is the same as the direction of the process gas flow in the reaction chamber as shown in FIG. 13. As shown in fig. 14, and the length direction of the heating lamps 230 in the lower lamp array is perpendicular to the process gas flow direction. This arrangement also provides uniform heating of the process gas flow within the reaction chamber, achieves uniform substrate temperature, and prevents process gas flow from creating turbulence.

In the present embodiment, as shown in fig. 13, the upper lamp array is divided into a middle area and edge areas at both sides of the middle area in the direction of the process gas flow. In the upper lamp array, the length of the middle zone heating lamps 230 is greater than the length of the edge zone heating lamps 230. The temperature of the surface of the substrate is locally controlled by independently controlling the temperature of the edge area and the middle area.

As shown in fig. 14, the lower lamp array is divided into a middle region and edge regions at both sides of the middle region in the direction of the process gas flow. In the lower lamp array, the heating lamps 230 of the middle region and the heating lamps 230 around the rotating drive shaft 224 have a first length, and the remaining heating lamps 230 have a second length, the first length being greater than the second length. In the lower lamp array, not only the edge area and the middle area but also the heating lamps 230 around the rotation driving shaft 224 are independently temperature-controlled.

The present invention also provides a CVD apparatus 20, as shown in fig. 2, comprising:

a reaction chamber 22;

a substrate stage 260 rotatably disposed in the reaction chamber for fixing a substrate W;

The inner wall of the reaction chamber 22 is fixedly provided with a reflecting screen, and the surface of the reflecting screen is provided with a metal coating. The heat loss caused by the heat transfer between the inner wall of the reaction chamber and the atmospheric environment is prevented by the metal coating. In this embodiment, the metal plating film is made of gold.

The present invention also provides a method for processing a semiconductor process, which is implemented by using the CVD apparatus 20 according to the present invention, as shown in fig. 15, and comprises:

placing a substrate W on a substrate bearing table 260, starting a heating device of the CVD equipment 20, and carrying out substrate process treatment;

the power of the heating lamps 230 is independently adjusted to achieve a uniform substrate surface temperature distribution.

In one embodiment of the present invention, the upper lamp array and the lower lamp array are divided into a plurality of zones, respectively, and the zones contain at least one heating lamp 230; the total power of each zone is independently controlled.

In another embodiment of the invention, the zones comprise a middle zone and an edge zone, the edge zone being independently temperature controlled relative to the middle zone.

In another embodiment of the invention, the total power of the area of the upper lamp array decreases along the direction of the process gas flow. In the lower lamp array, the power of the heating lamps 230 around the rotating drive shaft 224 is greater than the power of the other heating lamps 230.

The heating apparatus of the present invention provides radiant heat energy into the reaction chamber of the CVD apparatus 20 only through the heating lamps 230 (without using other shaped lamps). The arrangement of the upper lamp array and the lower lamp array can not only realize uniform temperature of the substrate, but also prevent process air flow from generating turbulent flow.

The present invention realizes local control of the surface temperature of the substrate by independently controlling the power of the heating lamps 230 by region (group), and solves the problem of non-uniformity of the temperature of a specific region of the surface of the substrate.

The present invention effectively compensates for a cold spot formed in a gap between adjacent heating lamps 230 by making the filament winding density of the vertical heating section 231 of the heating lamps greater than that of the horizontal heating section 232.

The upper reflecting screen 212 and the lower reflecting screen 222 of the invention better collect, reflect and gather light rays for the substrate bearing table 260 through the diffuse reflection area corresponding to the substrate bearing table 260, the specular reflection area positioned at the periphery of the diffuse reflection area and the arc-shaped section facing the substrate bearing table 260, thereby effectively improving the heat energy utilization rate of the heating device. And cooling gas channels are arranged in the upper reflecting screen 212 and the lower reflecting screen 222, so that the temperature of the upper reflecting screen 212 and the temperature of the lower reflecting screen 222 can be effectively controlled, and safety accidents are prevented.

While the invention has been described with reference to specific embodiments, the invention is not limited thereto, and various equivalent modifications and substitutions can be easily made by those skilled in the art within the technical scope of the invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims

1. A heating apparatus for a CVD apparatus including a substrate carrier table for carrying a substrate in a reaction chamber of the CVD apparatus, the heating apparatus comprising: an upper lamp module disposed above the reaction chamber and/or a lower lamp module disposed below the reaction chamber;

2. The heating device of claim 1, wherein said tubular lamp body comprises two vertical heating sections, and a horizontal heating section between said two vertical heating sections; the length direction of the horizontal heating section is the length direction of the heating lamp; the electrode end is positioned at one end of the vertical heating section; cold spots between adjacent heating lamps are compensated by adjacent vertical heating segments.

3. The heating apparatus of claim 2, wherein the filament in the vertical heating section has a winding density greater than the filament in the horizontal heating section.

4. The heating apparatus as claimed in claim 2, wherein the length direction of the heating lamps in the upper lamp array is perpendicular to the length direction of the heating lamps in the lower lamp array.

5. The heating apparatus of claim 4, wherein the length direction of the heating lamps in the upper lamp array is the same as the process gas flow direction in the reaction chamber, and the length direction of the heating lamps in the lower lamp array is perpendicular to the process gas flow direction; or the length direction of the heating lamps in the upper lamp array is perpendicular to the process gas flow direction, and the length direction of the heating lamps in the lower lamp array is the same as the process gas flow direction in the reaction chamber.

6. The heating apparatus of claim 1, wherein the upper lamp module and the lower lamp module further comprise an upper reflective screen and a lower reflective screen corresponding to the substrate holder, respectively, and wherein the upper reflective screen and the lower reflective screen both completely cover the substrate holder; the upper lamp array and the lower lamp array are respectively arranged at the bottom of the upper reflecting screen and the top of the lower reflecting screen; light rays emitted back to the substrate bearing table are collected through the upper reflecting screen and the lower reflecting screen and are reflected back to the substrate bearing table.

7. The heating apparatus as claimed in claim 6, wherein the regions of the bottom surface of the upper reflecting screen and the top surface of the lower reflecting screen corresponding to the substrate supporting stage are diffusely reflecting regions, and the other regions of the bottom surface of the upper reflecting screen and the top surface of the lower reflecting screen are specularly reflecting regions.

8. The heating apparatus as claimed in claim 6, wherein the upper and lower reflecting screens are provided with a plurality of fluid passages inside thereof, and the temperature control of the upper and lower reflecting screens is achieved by injecting a cooling fluid into the gas passages.

9. The heating apparatus as claimed in claim 6, wherein the upper reflecting screen and the lower reflecting screen are formed with a plurality of grooves, and the temperature of the upper reflecting screen and the lower reflecting screen is controlled by injecting cooling gas into the grooves.

10. The heating apparatus as claimed in claim 9, wherein the upper and lower reflective screens are further provided with a pair of sockets, and the recess is provided between the pair of sockets.

11. The heating apparatus as claimed in claim 6, wherein the bottom edge of the upper reflecting screen is provided with a plurality of arc-shaped faces formed to be upwardly arched toward the substrate, and the heating lamps of the bottom edge of the upper reflecting screen are respectively disposed in the corresponding arc-shaped faces; the bottom edge of the lower reflecting screen is provided with a plurality of arc surfaces which are formed by downward arching and face the substrate, and the heating lamps at the bottom edge of the lower reflecting screen are respectively arranged in the corresponding arc surfaces; and light is focused on the substrate bearing table through the arc-shaped surface.

12. The heating apparatus as claimed in claim 1, wherein each two adjacent heating lamps of said upper and lower arrays of lamps are grouped, and power of each group of heating lamps is independently controlled.

13. The heating apparatus as claimed in claim 1, wherein the upper lamp array is divided into a middle region and edge regions at both sides of the middle region; the length of the middle zone heating lamps is greater than the length of the edge zone heating lamps.

14. The heating apparatus of claim 1, wherein at least one row of heating lamps is present in the lower array of lamps, the row of heating lamps having a length less than the length of the other heating lamps.

15. A CVD apparatus, comprising:

a reaction chamber;

the substrate bearing table is arranged in the reaction chamber and can rotate, and is used for fixing the substrate;

heating device according to any one of claims 1 to 13 arranged above and/or below the reaction chamber.

16. A method of semiconductor process treatment, implemented using the CVD apparatus of claim 14, comprising:

placing a substrate on a substrate bearing table, starting a heating device of CVD equipment, and carrying out substrate process treatment;

17. The method of semiconductor processing as recited in claim 16, further comprising:

dividing an upper lamp array and a lower lamp array into a plurality of areas respectively, wherein the areas contain at least one heating lamp; the total power of each zone is independently controlled.

18. The method of semiconductor processing according to claim 16, wherein the region comprises a middle region and an edge region, the edge region being independently temperature controlled relative to the middle region.

19. The method of semiconductor processing as recited in claim 16, wherein the total power of the region decreases along the direction of process gas flow in the upper array of lamps.

20. The method according to claim 16, wherein the lower reflective shield has a through hole, and the rotating shaft of the substrate holder vertically penetrates the through hole to be fixedly connected to the bottom of the substrate holder; in the lower lamp array, the power of the heating lamps around the through hole is larger than that of other heating lamps.