CA1313813C - Film forming apparatus - Google Patents
Film forming apparatusInfo
- Publication number
- CA1313813C CA1313813C CA000557115A CA557115A CA1313813C CA 1313813 C CA1313813 C CA 1313813C CA 000557115 A CA000557115 A CA 000557115A CA 557115 A CA557115 A CA 557115A CA 1313813 C CA1313813 C CA 1313813C
- Authority
- CA
- Canada
- Prior art keywords
- susceptors
- forming apparatus
- film forming
- reaction chamber
- rotating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
Abstract of the Disclosure A film forming apparatus comprises a reaction furnace having a reaction chamber therein, injection nozzles for introducing a reactive fluid, provided on the reaction furnace, a discharge nozzle for discharging a reactive fluid, provided on the reaction furnace, and a pair of susceptors located in almost vertical position in the reaction chamber and having opposing sides separated for a specified distance. The susceptor includes a plurality of depressions formed in the oppo-site side, for holding a plurality of silicon wafer.
The paired susceptors are rotated in mutually opposite directions.
The paired susceptors are rotated in mutually opposite directions.
Description
~ 3 ~
This invention relates to a film forming apparatus for forming a film such as an epitaxial layer on objects to be coated with a film such as wafers.
With the trend toward higher integration and progressive microminimization of IC's, it is becoming a widespread practice to grow epitaxial crystals on semi-conductor substrates (hereinafter referred to as wafers) for ~10S devices, for example. As the wafers increase in diameter, the epitaxial layer is becoming gradually thinner.
The reaction apparatuses for epitaxial growth are broken down into three types: the horizontal reaction tube system, the vertical bell jar system and the barrel system. The latest addition is the recently-developed hot wall type, a modified version of the low pressure CVD system. The constructional outline of these reac-tion apparatuses is that a holder (hereinafter referred to as a susceptor) for holding wafers is placed in a high-temperature reaction furnace and reactive gases such as silicon tetrachloride (SiCQ4) and silane are introduced into the reaction furnace.
In forming an epitaxial film, it is important to keep uniform the thic~ness and the electric resistance of the film in order to secure high quality. With any of the above-mentioned reaction apparatuses, however, it is impossible to control temperature in an epitaxial process to produce uniform temperatures for all the ~3~
wafers and for the different positions of each wafer where chips are formed. As a result, the temperature distribution becomes non-uniform.
The temperature distribution of the wafers is determined according to a balance between the heat given by conduction and radiation from the susceptor and the heat loss by radiation from the surfaces of the wafers.
Normally, the reason for the irregular te~perature distribution is that since the heat losses differ among the wafers and also at the different positions of each wafer even if the wafers are heated uniformly by the susceptor.
In some reaction furnaces of bell jar system, a metal coating is formed on the outer surface to pro-vide radiation heat so that the heat is distributed more uniformly, but the quantity of radiation heat from the metal coating decreases with the growth of an epitaxial layer, resulting in the temperature distribution becoming uneven. The metal coating deteriorates as the epitaxial process is repeated. In addition, the tem-perature distribution is made uneven by the inflow rate of a reactive fluid.
As set forth above, the conventional apparatuses have a drawback that the temperature distribution as well as the fluid flow is uneven, making it impossible to secure a uniform thickness and a uniform electric ~31L~3:L~
resistance for the epitaxial film.
If one wishes to form a film on a number o~ wafers at the same time, he has to use a large-size apparatus, which makes the temperature distribution even ~ore irre-gular.
The object of this invention is to provide a film forming apparatus capable of forming a film on a number of objects in one process in a manner that the thickness and the resistance are uniform among the separate films and over the whole area of each film.
This invention can be more fully understood from the following detailed description when taken in con-junction with the accompanying drawings, in which:
Fig. 1 is a diagrammatic perspective view partly in section of a film forming apparatus according to a first embodiment of this invention;
Fig. 2 is a diagrammatic sectional view of a film forming apparatus according to a second embodiment of this invention;
Fig. 3 is a diagrammatic sectional view of a film forming apparatus according to a third embodiment;
and F~ig. 4 is a partial sectional view of a modified example of wafer support means.
With reference to the accompanying drawings, description will now be made of film forming apparatuses according to the preferred embodiments of this invention, which epitaxially grow single-crystal silicon layers on silicon wa~ers whose surfaces have been finished in a mirror finish.
Referring to Fig. 1 showing a first embodiment of this invention, numeral 1 indicates a cylindri~al reaction f~lrnace having both its ends closed. The reac~
tion furnace has a reaction chamber formed in it.
Reaction furnace 1 is formed of a heat-resistant member such as quartz glass and a metal. The shape of this reaction furnace is not limited to a circular form, but may be elliptical or rectangular. Reaction furnace 1 may be cooled in operation by conducting cooling water through its walls. Injection nozzles 2, 3 and 4 are provided at the top center of the peripheral surface and at the centers of both sides of reaction furnace 1, respectively. These injected ports are connected to supply sources of gaseous reactive fluids such as sili~
con tetrachloride (SiC~4) and silane. The reactive fluids are supplied from these supply sources into the reaction chamber. Discharge nozzle 5 is provided at the bottom o~ the peripheral surface of reaction furnace lo ; This discharge nozzle 5 is connected to a vacuum pump and a surplus fluid in the chamber is discharged from this discharge nozzle 5. The positions of the injeetion and discharge nozzles are not limited as described above.
For example the injection and discharge nozzles may be respectively provided at the bottom and top portions of ~3~3~
the furnace.
In this reaction chamber, there are provided a pair of disc-shaped holders or susceptors 7 and 8, located in almost vertical position and coaxially and opposed a specified distance apart. These susceptors are made of a heat-resistant material such as carbon. The suscep-tors have a number of circular depressions formed on their opposing sides. The circular depression~ are arranged at specified intervals along a circle having its center at the center of each susceptor. The circle need not be one as in this embodiment, but may be plural. The depressions should preferably ba arranged uniformly in radial direction from the center of each susceptor.
The individual depressions should have the same diameter which is a little larger than that of silicon wafers 6 to be inserted thereina Susceptors 7 and 8 are fixed respectively to one end each of hollow rotating shafts 9 and 10 extending coaxially. The other ends of rotating shafts g and 10 protrude outward through the side walls of reaction furnace 1 and rotatably supported by the side walls through bearings attached thereto.
In this embodiment, the above-mentioned injection nozzles 3 and 4, inserted into shafts 9 and 10, are com-posed of tubes which are open between the susceptors inthe reaction chamber. The above-mentioned shafts 9 and 10 are connected respectively to first and second motors ~3~3~
tll and ~12 and are rotated by these motors mutually in opposite directions. As a result, first susceptor 7 and second susceptor 8 rotate in the opposite directions.
~leanwhile, driving means to rotate the susceptors in the opposite directions may be composed o~ a motor and a transmission device to transmit two, normal and backward torques derived from this motor.
High frequency coils are at~ached to the sides of the above-mentioned susceptors 7 and 8 which are oppo-site to their sides ~acing each other. These coils areconnected electrically to an external power source through known means such as slide contacts to enable electric power from a power source, not shown, which is located outside, to be supplied to the susceptors even lS when the susceptors are rotating.
The operation of a film forming apparatus constructed as described above will now be described in the following.
As illustrated, mirror-finished wafers 6 are placed in the depressions of susceptors 7 and 8 and held firmly therein by support means, not shown. To take examples, the holding means may be one which comprises a projected edge at the periphery of the depresslon which will be described later with reference to Fig. 3 or anather means which is capable of setting desired diameters for the outer periphery of the wafer and the inner periphery of the depression to ensure a tight contact between them.
Then, while susceptors 7 and 8 are rotated mutually in opposite directions by driving motors Ml and M2, high frequency coil 11 is energized. The reactive fluid C is introduced into the reaction chamber through injection nozzles 2, 3 and ~ and the unnecessary gas in the chamber is discharged from discharge nozzle 5. Thus, an epitaxial layer is formed on the surfaces of wafers 6 by the reactive fluid.
~ith the film forming apparatus constructed as described, while the wafers to be coated with a film are held by a pair of susceptors, epitaxial layers are formed on the wafers~ Therefore, it is possible to deposit a film on a number of wafers in one process, obviating the need to make a large-size apparatus. The wafers are located opposed by a pair of susceptors 7 and a and the opposing wafers are rotated changing their relative position. Hence, the mirror-finish facas of the wafers 6 reflect the radiation heat toward the wafers on the opposite side. In other words, the opposed wafers serve as the radiation heat sources with the result that the temperature distribution between the opposed wafers is made uniform with better efficiency.
The relative movements of susceptors 7 and 8 ensures a uniform temperature distribution over the whole areas of the susceptors. Therefore, the tem-perature distribution and the flow of the reactive fluid :~ 3 ~
of not only over each wafer but of all wafers are made uniform. Consequently, the conditions of epitaxial reactions become identical for the surfaces of all wafers, thereby producing epitaxial films with uniform thickness and uniform resistance.
With reference to Figs. 2 and 3, description will now be made of second and third embodiments. In these embodiments, the same numerals are used for those parts virtually identical to those in the first embodiment and their description will be omitted.
In the second embodiment as shown in Fig. 2, susceptors 7 and 8 are provided tilted a little so that their portions located at the lower positions come closer, with the result that the bottom faces of the depressions are tilted a little from a vertical plane.
Thus, the wafers 6 in the depressions are prevented from dropping therefrom. Depressions 12 for holding wafers, provided in the susceptors, have the inside diameter a little larger than the outside diameter of wafers 6.
If the inside diameter of depressions 12 is too large in relation ~o the outer diameter of wafers 6, the depressions' function to hold wafers is reduced. Hence, the former should preferably b0 less than 1.1 times larger than the latter.
If the inside diameter of the depressions is larger than this, there is a possibility that the wafer rota-tion in the depressions which occurs as the susceptors 3 ~
rotate beco~es irregular, resultiny in non-uniform rota tion of the wafers. High frequency coils 11 are located a specified distance away and facing the sides of susceptors 7 and 8 which are opposite to the sides wnere the depressions are formed. Those coils 11 are fixed in reaction furnace 1 and rotating shafts 9 and 10 of susceptors 7 and 8 are inserted rotatably in the central portions of coils 11. Theref-ore, coils 11 are not rotated by the rotation of rotating shafts 9 and 10.
In the apparatus constructed as shown in Fig. 2, the wafers put in the depressions 12 of susceptors 7 and 8 do not fall out of the susceptors in an epitaxial pro-cess even if any special members are attached. When the susceptors rotate, the wafers rotate or make a toroidal lS motion as they revolve around the rotating shafts.
Therefore, no local irregularity in temperature distri-bution occurs for the wafers. The space between suscep-tors 7 and 8 becomes narrower toward the bottom.
Consequently, the reactive fluid flowing in the s~ace increases in flow velocity as it flows downward and the dirt adhering to the susceptors is removed by the fluid flowing at high velocity and discharged from discharge nozzle 5.
In the third embodiment of Fig. 3, there are pro-vided two pairs of susceptors 7 and 8 in reaction fur-nace 1. As in the above-described embodiment, connected to the members at the inside and outside of each pair of susceptors are rotating shafts 9 and lO having gas supply tube coaxially inserted therein.
In this embodiment, the susceptors located inside are fixed by a Eixed shaft and cannot rotate. As a result, only the susceptors located outside rotate in an epitaxial process. In this case, rotating shafts 9 and 10 may be rotated either in the same direction or in opposite directions.
~n addition, it is also possible to rotate suscep-tors 7 and 8 in mutually opposite directions as in theabove embodiments by using a rotating shaft in place of fixed shaft 13 and rotating the rotating sha~t through a bevel gear or the like by means of a rotating shaft inserted at right angles with the above-mentioned rotat-ing shafts 9 and lO into reaction furnace l. Susceptors7 and 8 are provided in vertical position and depres-sions 12 for holding wafers, formed on one side each of the susceptors, have their bottom faces tilted. Thus, the wafers can be prevented from alling out of the susceptors just as the susceptors being tilted in the second embodiment, Injection nozzle 2 has two separate branches 2a, each one of which is located just above between a pair of susceptors 7 and 8. Each one of two discharge nozzles 5 is located just below between a pair of susceptors 7 and 8.
With the apparatus according to the third embodi-ment of this invention, it is possible to form epitaxial 13~
layers on wafers in greater numbers in one process~
In the second and third embodiments of this inven-tion, the wafers are seated a little tilted from a vertical plane to hold the wafers on the susceptors.
However, as shown in Fig. 4, projected edge 8a may be formed at the periphery oE each depression of susceptors 8 to hold the peripheral edge o~ wafer 6. Such a pro-jected edge may be used in combination with a technique for tilting a wafer, This invention is not limited to the above-described embodiments. For example, this invention may be applied to CVD processes other than the epitaxial process. The wafers used need not be confined to those of silicon but may be formed oE other materials such as compound semiconductors. A pair of susceptors may be rotated in mutually opposite directions or one of the susceptors may be rotated. Also, the susceptors may be rotated at mutually different velocities. Put other-wise, it is only necessary to rotate the susceptors changing their relative position.
This invention relates to a film forming apparatus for forming a film such as an epitaxial layer on objects to be coated with a film such as wafers.
With the trend toward higher integration and progressive microminimization of IC's, it is becoming a widespread practice to grow epitaxial crystals on semi-conductor substrates (hereinafter referred to as wafers) for ~10S devices, for example. As the wafers increase in diameter, the epitaxial layer is becoming gradually thinner.
The reaction apparatuses for epitaxial growth are broken down into three types: the horizontal reaction tube system, the vertical bell jar system and the barrel system. The latest addition is the recently-developed hot wall type, a modified version of the low pressure CVD system. The constructional outline of these reac-tion apparatuses is that a holder (hereinafter referred to as a susceptor) for holding wafers is placed in a high-temperature reaction furnace and reactive gases such as silicon tetrachloride (SiCQ4) and silane are introduced into the reaction furnace.
In forming an epitaxial film, it is important to keep uniform the thic~ness and the electric resistance of the film in order to secure high quality. With any of the above-mentioned reaction apparatuses, however, it is impossible to control temperature in an epitaxial process to produce uniform temperatures for all the ~3~
wafers and for the different positions of each wafer where chips are formed. As a result, the temperature distribution becomes non-uniform.
The temperature distribution of the wafers is determined according to a balance between the heat given by conduction and radiation from the susceptor and the heat loss by radiation from the surfaces of the wafers.
Normally, the reason for the irregular te~perature distribution is that since the heat losses differ among the wafers and also at the different positions of each wafer even if the wafers are heated uniformly by the susceptor.
In some reaction furnaces of bell jar system, a metal coating is formed on the outer surface to pro-vide radiation heat so that the heat is distributed more uniformly, but the quantity of radiation heat from the metal coating decreases with the growth of an epitaxial layer, resulting in the temperature distribution becoming uneven. The metal coating deteriorates as the epitaxial process is repeated. In addition, the tem-perature distribution is made uneven by the inflow rate of a reactive fluid.
As set forth above, the conventional apparatuses have a drawback that the temperature distribution as well as the fluid flow is uneven, making it impossible to secure a uniform thickness and a uniform electric ~31L~3:L~
resistance for the epitaxial film.
If one wishes to form a film on a number o~ wafers at the same time, he has to use a large-size apparatus, which makes the temperature distribution even ~ore irre-gular.
The object of this invention is to provide a film forming apparatus capable of forming a film on a number of objects in one process in a manner that the thickness and the resistance are uniform among the separate films and over the whole area of each film.
This invention can be more fully understood from the following detailed description when taken in con-junction with the accompanying drawings, in which:
Fig. 1 is a diagrammatic perspective view partly in section of a film forming apparatus according to a first embodiment of this invention;
Fig. 2 is a diagrammatic sectional view of a film forming apparatus according to a second embodiment of this invention;
Fig. 3 is a diagrammatic sectional view of a film forming apparatus according to a third embodiment;
and F~ig. 4 is a partial sectional view of a modified example of wafer support means.
With reference to the accompanying drawings, description will now be made of film forming apparatuses according to the preferred embodiments of this invention, which epitaxially grow single-crystal silicon layers on silicon wa~ers whose surfaces have been finished in a mirror finish.
Referring to Fig. 1 showing a first embodiment of this invention, numeral 1 indicates a cylindri~al reaction f~lrnace having both its ends closed. The reac~
tion furnace has a reaction chamber formed in it.
Reaction furnace 1 is formed of a heat-resistant member such as quartz glass and a metal. The shape of this reaction furnace is not limited to a circular form, but may be elliptical or rectangular. Reaction furnace 1 may be cooled in operation by conducting cooling water through its walls. Injection nozzles 2, 3 and 4 are provided at the top center of the peripheral surface and at the centers of both sides of reaction furnace 1, respectively. These injected ports are connected to supply sources of gaseous reactive fluids such as sili~
con tetrachloride (SiC~4) and silane. The reactive fluids are supplied from these supply sources into the reaction chamber. Discharge nozzle 5 is provided at the bottom o~ the peripheral surface of reaction furnace lo ; This discharge nozzle 5 is connected to a vacuum pump and a surplus fluid in the chamber is discharged from this discharge nozzle 5. The positions of the injeetion and discharge nozzles are not limited as described above.
For example the injection and discharge nozzles may be respectively provided at the bottom and top portions of ~3~3~
the furnace.
In this reaction chamber, there are provided a pair of disc-shaped holders or susceptors 7 and 8, located in almost vertical position and coaxially and opposed a specified distance apart. These susceptors are made of a heat-resistant material such as carbon. The suscep-tors have a number of circular depressions formed on their opposing sides. The circular depression~ are arranged at specified intervals along a circle having its center at the center of each susceptor. The circle need not be one as in this embodiment, but may be plural. The depressions should preferably ba arranged uniformly in radial direction from the center of each susceptor.
The individual depressions should have the same diameter which is a little larger than that of silicon wafers 6 to be inserted thereina Susceptors 7 and 8 are fixed respectively to one end each of hollow rotating shafts 9 and 10 extending coaxially. The other ends of rotating shafts g and 10 protrude outward through the side walls of reaction furnace 1 and rotatably supported by the side walls through bearings attached thereto.
In this embodiment, the above-mentioned injection nozzles 3 and 4, inserted into shafts 9 and 10, are com-posed of tubes which are open between the susceptors inthe reaction chamber. The above-mentioned shafts 9 and 10 are connected respectively to first and second motors ~3~3~
tll and ~12 and are rotated by these motors mutually in opposite directions. As a result, first susceptor 7 and second susceptor 8 rotate in the opposite directions.
~leanwhile, driving means to rotate the susceptors in the opposite directions may be composed o~ a motor and a transmission device to transmit two, normal and backward torques derived from this motor.
High frequency coils are at~ached to the sides of the above-mentioned susceptors 7 and 8 which are oppo-site to their sides ~acing each other. These coils areconnected electrically to an external power source through known means such as slide contacts to enable electric power from a power source, not shown, which is located outside, to be supplied to the susceptors even lS when the susceptors are rotating.
The operation of a film forming apparatus constructed as described above will now be described in the following.
As illustrated, mirror-finished wafers 6 are placed in the depressions of susceptors 7 and 8 and held firmly therein by support means, not shown. To take examples, the holding means may be one which comprises a projected edge at the periphery of the depresslon which will be described later with reference to Fig. 3 or anather means which is capable of setting desired diameters for the outer periphery of the wafer and the inner periphery of the depression to ensure a tight contact between them.
Then, while susceptors 7 and 8 are rotated mutually in opposite directions by driving motors Ml and M2, high frequency coil 11 is energized. The reactive fluid C is introduced into the reaction chamber through injection nozzles 2, 3 and ~ and the unnecessary gas in the chamber is discharged from discharge nozzle 5. Thus, an epitaxial layer is formed on the surfaces of wafers 6 by the reactive fluid.
~ith the film forming apparatus constructed as described, while the wafers to be coated with a film are held by a pair of susceptors, epitaxial layers are formed on the wafers~ Therefore, it is possible to deposit a film on a number of wafers in one process, obviating the need to make a large-size apparatus. The wafers are located opposed by a pair of susceptors 7 and a and the opposing wafers are rotated changing their relative position. Hence, the mirror-finish facas of the wafers 6 reflect the radiation heat toward the wafers on the opposite side. In other words, the opposed wafers serve as the radiation heat sources with the result that the temperature distribution between the opposed wafers is made uniform with better efficiency.
The relative movements of susceptors 7 and 8 ensures a uniform temperature distribution over the whole areas of the susceptors. Therefore, the tem-perature distribution and the flow of the reactive fluid :~ 3 ~
of not only over each wafer but of all wafers are made uniform. Consequently, the conditions of epitaxial reactions become identical for the surfaces of all wafers, thereby producing epitaxial films with uniform thickness and uniform resistance.
With reference to Figs. 2 and 3, description will now be made of second and third embodiments. In these embodiments, the same numerals are used for those parts virtually identical to those in the first embodiment and their description will be omitted.
In the second embodiment as shown in Fig. 2, susceptors 7 and 8 are provided tilted a little so that their portions located at the lower positions come closer, with the result that the bottom faces of the depressions are tilted a little from a vertical plane.
Thus, the wafers 6 in the depressions are prevented from dropping therefrom. Depressions 12 for holding wafers, provided in the susceptors, have the inside diameter a little larger than the outside diameter of wafers 6.
If the inside diameter of depressions 12 is too large in relation ~o the outer diameter of wafers 6, the depressions' function to hold wafers is reduced. Hence, the former should preferably b0 less than 1.1 times larger than the latter.
If the inside diameter of the depressions is larger than this, there is a possibility that the wafer rota-tion in the depressions which occurs as the susceptors 3 ~
rotate beco~es irregular, resultiny in non-uniform rota tion of the wafers. High frequency coils 11 are located a specified distance away and facing the sides of susceptors 7 and 8 which are opposite to the sides wnere the depressions are formed. Those coils 11 are fixed in reaction furnace 1 and rotating shafts 9 and 10 of susceptors 7 and 8 are inserted rotatably in the central portions of coils 11. Theref-ore, coils 11 are not rotated by the rotation of rotating shafts 9 and 10.
In the apparatus constructed as shown in Fig. 2, the wafers put in the depressions 12 of susceptors 7 and 8 do not fall out of the susceptors in an epitaxial pro-cess even if any special members are attached. When the susceptors rotate, the wafers rotate or make a toroidal lS motion as they revolve around the rotating shafts.
Therefore, no local irregularity in temperature distri-bution occurs for the wafers. The space between suscep-tors 7 and 8 becomes narrower toward the bottom.
Consequently, the reactive fluid flowing in the s~ace increases in flow velocity as it flows downward and the dirt adhering to the susceptors is removed by the fluid flowing at high velocity and discharged from discharge nozzle 5.
In the third embodiment of Fig. 3, there are pro-vided two pairs of susceptors 7 and 8 in reaction fur-nace 1. As in the above-described embodiment, connected to the members at the inside and outside of each pair of susceptors are rotating shafts 9 and lO having gas supply tube coaxially inserted therein.
In this embodiment, the susceptors located inside are fixed by a Eixed shaft and cannot rotate. As a result, only the susceptors located outside rotate in an epitaxial process. In this case, rotating shafts 9 and 10 may be rotated either in the same direction or in opposite directions.
~n addition, it is also possible to rotate suscep-tors 7 and 8 in mutually opposite directions as in theabove embodiments by using a rotating shaft in place of fixed shaft 13 and rotating the rotating sha~t through a bevel gear or the like by means of a rotating shaft inserted at right angles with the above-mentioned rotat-ing shafts 9 and lO into reaction furnace l. Susceptors7 and 8 are provided in vertical position and depres-sions 12 for holding wafers, formed on one side each of the susceptors, have their bottom faces tilted. Thus, the wafers can be prevented from alling out of the susceptors just as the susceptors being tilted in the second embodiment, Injection nozzle 2 has two separate branches 2a, each one of which is located just above between a pair of susceptors 7 and 8. Each one of two discharge nozzles 5 is located just below between a pair of susceptors 7 and 8.
With the apparatus according to the third embodi-ment of this invention, it is possible to form epitaxial 13~
layers on wafers in greater numbers in one process~
In the second and third embodiments of this inven-tion, the wafers are seated a little tilted from a vertical plane to hold the wafers on the susceptors.
However, as shown in Fig. 4, projected edge 8a may be formed at the periphery oE each depression of susceptors 8 to hold the peripheral edge o~ wafer 6. Such a pro-jected edge may be used in combination with a technique for tilting a wafer, This invention is not limited to the above-described embodiments. For example, this invention may be applied to CVD processes other than the epitaxial process. The wafers used need not be confined to those of silicon but may be formed oE other materials such as compound semiconductors. A pair of susceptors may be rotated in mutually opposite directions or one of the susceptors may be rotated. Also, the susceptors may be rotated at mutually different velocities. Put other-wise, it is only necessary to rotate the susceptors changing their relative position.
Claims (11)
1. A film forming apparatus comprising:
a reaction furnace having a reaction chamber therein;
means coupled to said reaction furnace for introducing a reactive fluid, into said reaction chamber;
means coupled to said reaction furnace for discharging a reactive fluid from said reaction chamber;
at least two susceptors located in a generally vertical position in said reaction chamber and having respective sides facing each other;
means for holding on each of said facing sides of the respective susceptors a plurality of objects to be subjected to a film formation process; and rotating means for rotating at least one of said susceptors, around an axis substantially perpendicular thereto, relative to another of said at least two susceptors.
a reaction furnace having a reaction chamber therein;
means coupled to said reaction furnace for introducing a reactive fluid, into said reaction chamber;
means coupled to said reaction furnace for discharging a reactive fluid from said reaction chamber;
at least two susceptors located in a generally vertical position in said reaction chamber and having respective sides facing each other;
means for holding on each of said facing sides of the respective susceptors a plurality of objects to be subjected to a film formation process; and rotating means for rotating at least one of said susceptors, around an axis substantially perpendicular thereto, relative to another of said at least two susceptors.
2. The film forming apparatus according to claim 1, in which said rotating means includes means for rotating said at least two susceptors.
3. The film forming apparatus according to claim 2, in which said rotating means includes means for rotating said at least two susceptors in mutually opposite directions.
4. The film forming apparatus according to claim 1, in which said holding means includes a plurality of depressions formed on said opposing sides of said susceptors, in each of which an object to be coated with a film is placed.
5. The film forming apparatus according to claim 4, in which said depressions have an inside diameter larger than the outer diameter of the objects to be coated with a film and smaller than 1.1 times said outer diameter of the objects.
6. The film forming apparatus according to claim 4, in which said depressions have bottom aces which are titled from a vertical plane.
7. The film forming apparatus according to claim 4, in which said holding means includes projecting edges provided at peripheral edges of said depressions, each projecting edge being capable of holding a peripheral edge of an object subject to film formation.
8. The film forming apparatus according to claim 1, in which said susceptors are located titled from a vertical plane so that space between their respective facing sides becomes narrower toward the bottom, said fluid introducing means being provided at the top of said reaction chamber, said discharging means being provided at the bottom of said reaction chamber.
9. The film forming apparatus according to claim 1, further comprising means coupled to the rotating means for heating said objects.
10. The film forming apparatus according to claim 9, wherein said heating means comprises electrical conductors mounted on said at least two susceptors in the respective side opposite to that on which the plurality of objects is held.
11. The film forming apparatus according to claim 9, wherein said heating means comprises electrical conductors mounted on surfaces parallel, respectively, to said at least two susceptors and spaced therefrom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000557115A CA1313813C (en) | 1986-12-09 | 1988-01-22 | Film forming apparatus |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61291468A JPS63144513A (en) | 1986-12-09 | 1986-12-09 | Barrel type epitaxial growth device |
| CA000557115A CA1313813C (en) | 1986-12-09 | 1988-01-22 | Film forming apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1313813C true CA1313813C (en) | 1993-02-23 |
Family
ID=25671675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000557115A Expired - Fee Related CA1313813C (en) | 1986-12-09 | 1988-01-22 | Film forming apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA1313813C (en) |
-
1988
- 1988-01-22 CA CA000557115A patent/CA1313813C/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
|---|---|---|---|
| MKLA | Lapsed |