CN115747966A - Epitaxial growth equipment for ultra-wide bandgap semiconductor material gallium oxide - Google Patents
Epitaxial growth equipment for ultra-wide bandgap semiconductor material gallium oxide Download PDFInfo
- Publication number
- CN115747966A CN115747966A CN202211536886.2A CN202211536886A CN115747966A CN 115747966 A CN115747966 A CN 115747966A CN 202211536886 A CN202211536886 A CN 202211536886A CN 115747966 A CN115747966 A CN 115747966A
- Authority
- CN
- China
- Prior art keywords
- growth
- gas
- baffle plate
- disc
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses an epitaxial growth device of a super-wide bandgap semiconductor material gallium oxide, wherein the epitaxial growth device comprises: including heating the casing, be provided with the gas outlet on the casing, be provided with gallium chloride access structure in the casing, oxygen access structure and growth dish, gallium chloride access structure is including the intake pipe that communicates in proper order, the gallium boat, first even gas baffling board and spraying pipe, oxygen access structure includes that oxygen advances tub and the even gas baffling board of second, oxygen advances tub front end and stretches out outside the casing, the growth dish is rotatable dish, growth dish upper surface level sets up, treat that the growth substrate arranges the growth dish upper surface in, be provided with the drive structure in the growth dish, drive structure drive growth dish rotates, spraying pipe lower extreme and the even gas baffling board rear end of second are all just facing growth dish upper surface, be provided with the gas outlet on the casing. The invention provides special HVPE equipment for a six-inch gallium oxide epitaxial wafer, optimizes the corresponding structures of gas mixing, gas homogenizing and the like through simulation, and the structure and the process can greatly improve the uniformity of gallium oxide deposition.
Description
Technical Field
The invention relates to the technical field of gallium oxide growth, in particular to epitaxial growth equipment for a super-wide bandgap semiconductor material gallium oxide.
Background
Gallium oxide (Ga) 2 O 3 ) The oxide semiconductor material is an ultra-wide bandgap oxide semiconductor material, and is a new member of third-generation semiconductor materials after SiC and GaN. Ga 2 O 3 Has excellent photoelectric characteristics, good thermal stability and chemical stability. Wherein, beta-Ga 2 O 3 The film has high transparency in a deep ultraviolet region, and is very suitable for manufacturing an ultraviolet photoelectric material. beta-Ga 2 O 3 Has a breakdown field strength of 8MV/cm which is much higher than that of SiC and GaN, beta-Ga 2 O 3 There is great potential in the application of field effect transistors, schottky diodes and other power electronic devices. At the same time, ga 2 O 3 The gas-sensitive property of the material is excellent, and the material is a candidate material for preparing a high-temperature oxygen-sensitive device. Therefore, ga2O3 materials have been a research hotspot today.
HVPE is an abbreviation for hydride vapor phase epitaxy technique. The growth rate of HVPE growth crystal is fast, and in the report of HVPE growth GaN, the growth rate of GaN film can reach over 100 um/h. Meanwhile, the HVPE system has low manufacturing cost and relatively simple equipment and process, can grow high-quality thick film materials while ensuring the growth speed, and is paid considerable attention by researchers in recent years. HVPE growth of beta-Ga 2 O 3 The film system mainly comprises four parts, namely (1) a furnace body and a reactor, (2) a gallium boat and a gas conveying pipe, (3) a gas configuration system and (4) a tail gas treatment system.
HVPE growth of beta-Ga 2 O 3 The reaction process of the film comprises the following steps:
firstly, HCI gas carried by carrier gas enters a gallium boat and reacts with gallium metal in the gallium boat to generate GaCl gas. At the same time, the carrier gas carries O 2 Introducing into the reactionCavity, O 2 A separation gas N is introduced between the gas inlet and the GaCl gas inlet 2 ;
Second, the carrier gas continues to carry GaCl gas to the upper part of the substrate and O 2 React to generate beta-Ga 2 O 3 And is deposited on the substrate and is then deposited on the substrate,
and thirdly, the carrier gas carries the tail gas to enter a tail gas treatment system.
In practice it was found that the existing HVPE grows beta-Ga 2 O 3 When thin, the film thickness on the substrate is not uniform due to the following points:
1. GaCl tube and O blowing gas into substrate 2 The pipelines are all round pipes, the gas outlet of the pipelines is concentrated, the flow rate is high, the retention time of two gas components above the substrate is short, and insufficient time is used for substrate deposition, so that the consumption of raw materials is large, meanwhile, the diameter of the pipelines is obviously smaller than the width of the substrate, the gas blowing can be concentrated on a small part of the center of the substrate, the gas concentration at the periphery of the substrate is low, and the substrate deposition is uneven;
2. GaCl and O 2 When the surfaces of the substrates are converged, impact is generated, and further vortex is formed, so that the gas flow on the surfaces of the substrates is complex and difficult to measure, and further, the deposition of the substrates is uneven.
Disclosure of Invention
In order to solve the technical problem of uneven substrate deposition caused by two types of materials mentioned in the background technology, the invention provides epitaxial growth equipment for a super-wide bandgap semiconductor material gallium oxide.
In order to achieve the technical purpose, the technical scheme adopted by the invention is as follows:
an apparatus for epitaxial growth of ultra-wide bandgap semiconductor material gallium oxide, wherein: comprises a shell, an air outlet is arranged on the shell, a gallium chloride channel structure, an oxygen channel structure and a growth disc are arranged in the shell, inert gas is filled in the shell, the gallium chloride channel structure comprises an air inlet pipe, a gallium boat, a first gas homogenizing baffle plate and a spraying pipe which are sequentially communicated, the front end of the air inlet pipe extends out of the shell, hydrogen chloride gas can be introduced into the air inlet pipe, the gallium boat is a storage bin in which gallium is arranged, the hydrogen chloride gas reacts with gallium in the gallium boat to generate gallium chloride, the gallium chloride gas enters the front end of the first gas homogenizing baffle plate, the first gas homogenizing baffle plate is a hollow plate with the width matched with the diameter of a substrate to be grown and a bend in the length direction, the rear end of the first gas homogenizing baffle plate is communicated with the upper end of the spraying pipe, the gallium chloride gas is sprayed out of the spraying pipe after passing through an inner cavity of the first gas homogenizing baffle plate, the width of the spraying pipe is matched with the diameter of a substrate to be grown, the oxygen passage structure comprises an oxygen inlet pipe and a second gas homogenizing baffle plate, the front end of the oxygen inlet pipe extends out of the shell, inert gas mixed with oxygen can enter the front end of the second gas homogenizing baffle plate through the oxygen inlet pipe, the second gas homogenizing baffle plate is a hollow plate with the width matched with the diameter of the substrate to be grown and is provided with a bend in the length direction, the rear end of the second gas homogenizing baffle plate is an open end, the inert gas mixed with the oxygen can be sprayed out from the rear end of the second gas homogenizing baffle plate, the growth disc is a rotatable disc, the upper surface of the growth disc is horizontally arranged, the substrate to be grown is placed on the upper surface of the growth disc, a driving structure is arranged in the growth disc and drives the growth disc to rotate, the lower end of the spraying pipe and the rear end of the second gas homogenizing baffle plate are both opposite to the upper surface of the growth disc, and an air outlet is formed in the shell.
In some of these embodiments, the first gas distribution baffle and the second gas distribution baffle are both serpentine.
In some embodiments, the number of the spray pipes is several, and the spray pipes are arranged in parallel at equal intervals along the front-back direction.
In some of these embodiments, the spray tube is inclined at an angle of 10 ° to 30 ° to the horizontal.
In some embodiments, the separation plate is arranged on the upper surface of the growth disc, the separation plate is arranged in parallel with the upper surface of the growth disc, the distance between the separation plate and the growth disc is not more than 0.5cm, the lower end of the spraying pipe and the rear end of the second gas homogenizing baffle plate both extend into the position between the separation plate and the growth disc, air blowing from the lower end of the spraying pipe and the rear end of the second gas homogenizing baffle plate to the horizontal direction of the surface of the growth disc is from front to back, and the separation plate is used for reducing the height of the space above the growth disc, so that gallium chloride gas and inert gas mixed with oxygen cannot flow back when the surface of the growth disc impacts each other, and a vortex is formed.
In some embodiments, the shell is provided with a reaction source region and an epitaxial layer growth region, the rear end of the reaction source region is connected with the front end of the epitaxial layer growth region through an insulating sealing interlayer, a first heating structure is arranged outside the reaction source region, a second heating structure is arranged outside the epitaxial layer growth region, the air inlet pipe, the gallium boat and the front half section of the first gas homogenizing baffle plate are all located in the reaction source region, the rear half section of the first gas homogenizing baffle plate and the spraying pipe are located in the epitaxial layer growth region, the oxygen inlet pipe and the front half section of the second gas homogenizing baffle plate are both located in the reaction source region, the rear half section of the second gas homogenizing baffle plate is located in the epitaxial layer growth region, and the first heating structure and the second heating structure can respectively heat the reaction source region and the epitaxial layer growth region to enable the temperatures of the reaction source region and the epitaxial layer growth region to meet preset temperature requirements.
In some of these embodiments, the reaction source region temperature is higher than the epitaxial layer growth region temperature.
In some of these embodiments, the growth disk upper surface is a quartz face.
In some of these embodiments, the inert gas mixed with oxygen is argon or nitrogen.
In some embodiments, the driving structure disposed in the growth disc is a rotating motor, and the rotating motor drives the growth disc to rotate.
The invention has the following advantages:
1. the invention firstly rectifies the airflow finally sprayed on the substrate by arranging the first air-homogenizing baffle plate and the second air-homogenizing baffle plate, changes the airflow originally in the circular pipeline into a shape with the width matched with the width of the substrate through the inner cavity of the baffle plate, and meanwhile, because the width of the baffle plate is obviously larger than the pipe diameters of the air inlet pipe and the oxygen inlet pipe, the flow velocity of the gas can be obviously reduced, so that when the final airflow is sprayed on the substrate, the flow velocity is slower, meanwhile, the whole substrate can be well covered, and the uniformity of deposition is greatly improved.
2. The invention arranges a separation plate on the upper surface of the growth disc, and the separation plate replaces the traditional N 2 A protective layer and a separation plate for reducing the height of the space above the growth disk to allow the generation of the gallium chloride gas and the inert gas mixed with oxygenThe surfaces of the long discs cannot flow back when impacting each other, and vortex cannot be formed, so that the uniformity of deposition is improved.
Drawings
FIG. 1 is a cross-sectional view of a horizontal gallium oxide growth apparatus of the present invention;
FIG. 2 is an exploded view of the horizontal gallium oxide growth apparatus of the present invention;
FIG. 3 is a perspective view of the gallium chloride channel structure of the horizontal gallium oxide growth apparatus of the present invention;
fig. 4 is a schematic view showing the smooth flow of gas over the upper surface of the growth disk by the separation plate.
The label names in the figure: the device comprises a shell 1, a reaction source region 1a, an epitaxial layer growth region 1b, a first heating structure 11, a second heating structure 12, an insulating sealing interlayer 13, a gallium chloride channel structure 2, an air inlet pipe 21, a gallium boat 22, a first gas homogenizing baffle plate 23, a spraying pipe 24, an oxygen channel structure 3, an oxygen inlet pipe 31, a second gas homogenizing baffle plate 32, a growth disc 4 and a separation plate 5.
Detailed Description
Embodiments of the present invention are described in further detail below with reference to the accompanying drawings.
It should be noted that the terms "upper", "lower", "left", "right", "front", "back", etc. used in the present invention are for clarity of description only, and are not intended to limit the scope of the present invention, and the relative relationship between the terms and the terms may be changed or adjusted without substantial technical change.
As shown in the figures 1-3 of the drawings,
the horizontal gallium oxide growth device comprises a gallium chloride channel structure 2 which is filled with HCL gas and has a spraying function, wherein the gallium chloride channel structure 2 comprises a gas inlet pipe 21, the HCL gas is filled into a gallium boat 22 filled with Ga through the gas inlet pipe 21, and then the gas which is reacted into gallium chloride GaCl is sprayed out of a spraying pipe 24 through a first gas homogenizing baffle plate 23.
The size of the first gas homogenizing baffle plate 23 is 100-200mm, and the angle between the first gas homogenizing baffle plate 23 and the horizontal plane is 10-30 degrees.
Ar or N 2 Carrying O 2 Enter intoOxygen enters the pipe 31, then enters the second gas homogenizing baffle plate 32, finally is sprayed out from the tail end of the second gas homogenizing baffle plate 32,
GaCl and O 2 Reacting to form Ga on a substrate 2 O 3 A film.
The reaction equation in the gallium boat 22 is:
the reaction equation at the substrate surface is:
finally, the redundant gas is discharged from the gas outlet.
The shell 1 is provided with a reaction source region 1a and an epitaxial layer growth region 1b, the rear end of the reaction source region 1a is connected with the front end of the epitaxial layer growth region 1b through an insulating sealing interlayer 13, a first heating structure 11 is arranged outside the reaction source region 1a, a second heating structure 12 is arranged outside the epitaxial layer growth region 1b, an air inlet pipe 21, a gallium boat 22 and the front half section of a first gas homogenizing baffle plate 23 are all positioned in the reaction source region 1a, the rear half section of the first gas homogenizing baffle plate 23 and a spraying pipe 24 are positioned in the epitaxial layer growth region 1b, an oxygen inlet pipe 31 and the front half section of a second gas homogenizing baffle plate 32 are all positioned in the reaction source region 1a, the rear half section of the second gas homogenizing baffle plate 32 is positioned in the epitaxial layer growth region 1b, the heating temperature of the reaction source region 1a is 1123K, and the temperature of the epitaxial layer growth region 1b is 1323K.
The upper surface of the growth disc 4 is provided with a separation plate 5, the separation plate 5 is arranged in parallel with the upper surface of the growth disc 4, the distance between the separation plate 5 and the growth disc 4 is not more than 0.5cm, the lower end of the spraying pipe 24 and the rear end of the second air homogenizing baffle plate 32 all extend into the position between the separation plate 5 and the growth disc 4, and the air blowing from the lower end of the spraying pipe 24 and the rear end of the second air homogenizing baffle plate 32 to the horizontal direction of the surface of the growth disc 4 is from the front to the back, the separation plate 5 is used for reducing the height of the space above the growth disc 4, as can be seen from figure 4, the air enters the separation plate 5 and then grows in a reaction area. The flow velocity in the flow region is relatively stable without turbulence. The uniformity of deposition is improved. The growth disk 4, by rotating, enables the substrate to be more uniformly contacted with the gas, which also further improves the uniformity of deposition.
The above are only preferred embodiments of the present invention, and the scope of the present invention is not limited to the above examples, and all technical solutions that fall under the spirit of the present invention belong to the scope of the present invention. It should be noted that modifications and adaptations to those skilled in the art without departing from the principles of the present invention may be apparent to those skilled in the relevant art and are intended to be within the scope of the present invention.
Claims (10)
1. An epitaxial growth device of ultra-wide bandgap semiconductor material gallium oxide is characterized in that: the device comprises a shell (1), wherein an air outlet is formed in the shell (1), a gallium chloride channel structure (2), an oxygen channel structure (3) and a growth disc (4) are arranged in the shell (1), inert gas is filled in the shell (1), the gallium chloride channel structure (2) comprises an air inlet pipe (21), a gallium boat (22), a first gas homogenizing baffle plate (23) and a spraying pipe (24) which are sequentially communicated, the front end of the air inlet pipe (21) extends out of the shell (1), hydrogen chloride gas can be introduced into the air inlet pipe (21), the gallium boat (22) is a storage cabin which is internally provided with gallium, hydrogen chloride gas reacts with gallium in the gallium boat (22) to generate gallium chloride, the gallium chloride gas enters the front end of the first gas homogenizing baffle plate (23), the first gas homogenizing baffle plate (23) is a hollow plate which is matched with the diameter of a substrate to be grown and is provided with a bend in the length direction, the rear end of the first gas homogenizing baffle plate (23) is communicated with the upper end of the spraying pipe (24), the gallium chloride gas is sprayed out of the spraying pipe (31) and the oxygen inlet pipe (31) comprises a second gas homogenizing baffle plate (31) which is matched with the oxygen inlet pipe (24) and a second gas inlet pipe (31), inert gas mixed with oxygen can enter the front end of a second gas homogenizing baffle plate (32) through an oxygen inlet pipe (31), the second gas homogenizing baffle plate (32) is a hollow plate which is matched with the diameter of a substrate to be grown in width and is provided with a bend in the length direction, the rear end of the second gas homogenizing baffle plate (32) is an open end, the inert gas mixed with the oxygen can be sprayed out from the rear end of the second gas homogenizing baffle plate (32), the growth disc (4) is a rotatable disc, the upper surface of the growth disc (4) is horizontally arranged, the substrate to be grown is arranged on the upper surface of the growth disc (4), a driving structure is arranged in the growth disc (4) and drives the growth disc (4) to rotate, the lower end of the spraying pipe (24) and the rear end of the second gas homogenizing baffle plate (32) are both right opposite to the upper surface of the growth disc (4), and an air outlet is formed in the shell (1).
2. An apparatus for epitaxial growth of gan as a semiconductor material with ultra-wide bandgap as claimed in claim 1, wherein: the first air-homogenizing baffle plate (23) and the second air-homogenizing baffle plate (32) are both bent in a snake shape.
3. An apparatus for epitaxial growth of gan as a super-wide bandgap semiconductor material as claimed in claim 2, wherein: the number of the spray pipes (24) is a plurality, and the spray pipes (24) are arranged in parallel at equal intervals in the front-back direction.
4. An apparatus for epitaxial growth of gan as a semiconductor material with ultra-wide bandgap as claimed in claim 3, wherein: the spray pipe (24) is obliquely arranged, and the angle between the spray pipe (24) and the horizontal plane is 10-30 degrees.
5. An apparatus for epitaxial growth of gan as a semiconductor material with ultra-wide bandgap as claimed in claim 4, wherein: the device is characterized in that a separation plate (5) is arranged on the upper surface of the growth disc (4), the separation plate (5) and the upper surface of the growth disc (4) are arranged in parallel, the distance between the separation plate (5) and the growth disc (4) is not more than 0.5cm, the lower end of the spraying pipe (24) and the rear end of the second gas homogenizing baffle plate (32) both extend into the position between the separation plate (5) and the growth disc (4), air blowing from the lower end of the spraying pipe (24) and the rear end of the second gas homogenizing baffle plate (32) to the horizontal direction of the surface of the growth disc (4) is from front to back, the separation plate (5) is used for reducing the height of the upper space of the growth disc (4), so that gallium chloride gas and inert gas mixed with oxygen cannot flow back when the surface of the growth disc (4) impacts each other, and a vortex is formed.
6. An apparatus for epitaxial growth of gan as a semiconductor material with ultra-wide bandgap as claimed in claim 5, wherein: the shell (1) is provided with a reaction source region (1 a) and an epitaxial layer growth region (1 b), the rear end of the reaction source region (1 a) is connected with the front end of the epitaxial layer growth region (1 b) through an insulating sealing interlayer (13), a first heating structure (11) is arranged outside the reaction source region (1 a), a second heating structure (12) is arranged outside the epitaxial layer growth region (1 b), an air inlet pipe (21), a gallium boat (22) and the front half section of a first gas homogenizing baffle plate (23) are all located in the reaction source region (1 a), the rear half section of the first gas homogenizing baffle plate (23) and a spraying pipe (24) are located in the epitaxial layer growth region (1 b), the front half sections of an oxygen inlet pipe (31) and a second gas homogenizing baffle plate (32) are all located in the reaction source region (1 a), the second gas homogenizing baffle plate (32) is located in the epitaxial layer growth region (1 b), the first heating structure (11) and the second heating structure (12) can respectively heat the reaction source region (1 a) and the epitaxial layer growth region (1 b), and the temperature of the reaction source region (1 b) can meet the temperature requirements of the reaction source region (1 b), and the temperature requirements of the reaction layer growth region (1 b) and the temperature requirements.
7. An apparatus for epitaxial growth of gan as a semiconductor material with ultra-wide bandgap as claimed in claim 6, wherein: the temperature of the reaction source region (1 a) is higher than that of the epitaxial layer growth region (1 b).
8. An apparatus for epitaxial growth of gan as a super-wide bandgap semiconductor material as in claim 7, wherein: the upper surface of the growth disc (4) is a quartz surface.
9. An apparatus for epitaxial growth of gan as a super-wide bandgap semiconductor material as in claim 8, wherein: the inert gas mixed with oxygen is argon or nitrogen.
10. An apparatus for epitaxial growth of gan as a semiconductor material with ultra-wide bandgap as claimed in claim 9, wherein: the growth disc (4) is internally provided with a driving structure which is a rotating motor, and the rotating motor drives the growth disc (4) to rotate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211536886.2A CN115747966A (en) | 2022-12-01 | 2022-12-01 | Epitaxial growth equipment for ultra-wide bandgap semiconductor material gallium oxide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211536886.2A CN115747966A (en) | 2022-12-01 | 2022-12-01 | Epitaxial growth equipment for ultra-wide bandgap semiconductor material gallium oxide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115747966A true CN115747966A (en) | 2023-03-07 |
Family
ID=85342612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211536886.2A Pending CN115747966A (en) | 2022-12-01 | 2022-12-01 | Epitaxial growth equipment for ultra-wide bandgap semiconductor material gallium oxide |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115747966A (en) |
-
2022
- 2022-12-01 CN CN202211536886.2A patent/CN115747966A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW544775B (en) | Chemical vapor deposition apparatus and chemical vapor deposition method | |
| CN100482857C (en) | Systems and methods for epitaxially depositing films on semiconductor substrates | |
| CN105441904A (en) | Gas spray device, chemical vapor deposition device and method | |
| TWI276698B (en) | Chemical vapor deposition reactor | |
| TWI537416B (en) | A CVD reactor with a strip inlet region and a method of depositing a layer on the substrate in such a CVD reactor | |
| EP1660697A4 (en) | Alkyl push flow for vertical flow rotating disk reactors | |
| CN106811736A (en) | A kind of chemical vapor deposition unit | |
| CN102230165A (en) | Spray header structure for chemical vapor deposition epitaxial equipment | |
| CN114072900B (en) | Wafer carrying disc and wafer epitaxial device | |
| JP2024503166A (en) | Semiconductor growth apparatus and its operating method | |
| CN115747966A (en) | Epitaxial growth equipment for ultra-wide bandgap semiconductor material gallium oxide | |
| TWI490367B (en) | Mocvd (metal organic chemical vapor deposition) method and apparatus thereof | |
| JPH0316208A (en) | Apparatus for silicon epitaxial growth | |
| CN105986314B (en) | A kind of reactor for vapor phase epitaxial growth semiconductor single crystal material | |
| CN103774115B (en) | Chemical vapor deposition unit | |
| CN105803425B (en) | The reaction pedestal of metal organic chemical compound vapor deposition reaction unit | |
| CN218756159U (en) | Spraying device for semiconductor material growth | |
| CN103014668B (en) | Chemical vapor deposition (CVD) device | |
| CN216765048U (en) | Structure for improving tubular PECVD (plasma enhanced chemical vapor deposition) gas inlet flange | |
| CN118086874B (en) | Coating process for plasma enhanced atomic layer deposition | |
| JP5481415B2 (en) | Vapor growth apparatus and vapor growth method | |
| CN110257905A (en) | A kind of reaction chamber structure of hydride gas-phase epitaxy equipment | |
| CN117552100A (en) | Gallium oxide MOCVD epitaxial growth equipment and growth method | |
| CN112239889A (en) | Method for slowing down tube wall deposition gallium nitride in halide vapor phase epitaxial growth system and halide vapor phase epitaxial growth system | |
| CN105779970B (en) | Gas spray and precipitation equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |